JP4601128B2 - LED light source and manufacturing method thereof - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an LED light source in which an LED (Light Emitting Diode) chip is mounted on a substrate and a method for manufacturing the same, and in particular, has high luminous efficiency, excellent productivity, high accuracy, and the shape of a sealing member. The present invention relates to an LED light source having a high degree of freedom of material and a manufacturing method thereof.
[0002]
[Prior art]
As a conventional LED light source, for example, there is one disclosed in JP-A-11-168235.
[0003]
FIG. 9 shows the LED light source. This LED light source was individually formed on a substrate for LED mounting 100 in which a pair of positive and negative leads 110A and 110B was formed on a base material 101, and a pair of leads 110A and 110B in a separate process from the board manufacturing process. It has LED chip 130 connected via a pair of bumps 120a and 120b made of gold, solder, etc., transparent resin 140 for sealing LED chip 130, and underfill resin 150. The pair of leads 110A and 110B is formed to extend from the front surface 101a of the base material 101 to the back surface 101c through the side surface 101b. In the LED chip 130, a reflective layer 131 and a pair of positive and negative electrodes (not shown) are formed on a lower surface 130b opposite to the upper surface 130a serving as a light emitting surface, and the pair of electrodes are interposed via a pair of bumps 120a and 120b. It is connected to a pair of leads 110A and 110B. Further, when the LED mounting substrate 100 on which the LED chip 130 is mounted is mounted on the main substrate, the bumps 120a and 120b may be peeled off if the upper surface 130a of the LED chip 130 is adsorbed. The transparent upper surface of the transparent resin 140 having a hardness of 1 is adsorbed and handled. According to such a configuration, since no electrode is provided on the light emitting surface of the LED chip 130, the light emission efficiency can be improved.
[0004]
[Problems to be solved by the invention]
However, according to the conventional LED light source, the bumps are formed by forming fine wires such as gold and solder into a spherical shape and pressing them one by one with a bump bonder. In addition, since the positioning is based on the lead pattern, it is difficult to obtain the position accuracy due to the edge of the lead pattern or the pattern deviation.
In addition, in order to handle the LED mounting substrate on which the LED chip is mounted, the transparent resin 140 having a certain degree of hardness and a flat upper surface must be provided in advance, so that the shape and material of the transparent resin are limited. .
[0005]
Accordingly, an object of the present invention is to provide a highly accurate LED light source having high luminous efficiency, excellent productivity, and a manufacturing method thereof.
Another object of the present invention is to provide an LED light source having a high degree of freedom in the shape and material of the sealing member and a method for manufacturing the LED light source.
[0006]
[Means for Solving the Problems]
In order to achieve the above object, the present invention provides a pair of positive and negative back leads formed on the back surface of an insulating base material, and a positive and negative polarity connected to the pair of back leads on the surface of the insulating base material by a pair of metal connecting portions. A substrate having a pair of front leads, and a pair of positive and negative electrodes on the surface facing the substrate, the pair of electrodes being connected to the pair of front leads of the substrate via a pair of bonding bumps A direction perpendicular to the direction of ultrasonic vibration at the time of bonding by ultrasonic vibration before mounting the LED chip, so that the pair of bonding bumps are circular after mounting the LED chip. long oval or formed into oval, and to provide an LED light source, characterized in that formed on the pair of tables lead by plating.
According to the said structure, the light from a some LED chip is radiate | emitted from the light-projection surface in which the electrode is not provided. Further, by forming the pair of bonding bumps by plating, productivity is improved and the outer shape of the substrate or the alignment hole can be used as a reference, so that high positional accuracy can be obtained. “A pair of bonding bumps” is not limited to the case where one bump is used for each positive and negative pole, but one bump is used for one pole and a plurality of bumps are used for the other pole. The case where a plurality of bumps are used is included.
[0007]
In order to achieve the above object, the present invention provides a pair of positive and negative back leads on the back surface of an insulating base material, and a pair of positive and negative surfaces connected to the surface of the insulating base material by a pair of metal connecting portions on the pair of back leads. An assembly substrate having a plurality of sets of leads is formed, and a pair of bonding bumps are formed on the plurality of pairs of front leads of the assembly substrate so as to be circular after the LED chip is mounted. A plurality of LED chips formed in a long oval shape or an oval shape in a direction and having a pair of positive and negative electrodes on one surface side are mounted on the aggregate substrate by connecting the pair of electrodes to the pair of bumps, An LED light source manufacturing method is provided, wherein the collective substrate on which the plurality of LED chips are mounted is divided for each LED chip.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
1 and 2 show an LED surface light emitting device to which an LED light source according to an embodiment of the present invention is applied. FIG. 1 (a) is a front view, FIG. 1 (b) is a side view, and FIG. Is a bottom view, FIG. 2 (a) is an enlarged view of part A of FIG. 1 (a), FIG. 2 (b) is an enlarged view of part B of FIG. 1 (a), and FIG. 2 (c) is a bottom view of the LED chip. is there.
[0009]
The LED surface light emitting device 1 includes a mother substrate 2 having a wiring pattern formed on a front surface 2a and a back surface 2b.
[0010]
On the surface 2a of the mother substrate 2, as shown in FIGS. 1A, 1B, and 2, a plurality of LED chips 4 arranged in a row via the submount substrate 3, and each LED A plurality of sealing members 5 made of transparent resin for sealing the chip 4, a spacer 6 disposed on the surface 2a of the mother substrate 2, and a reflector that reflects light from the LED chip 4 upward in FIG. 7, a transparent plate 8 that protects the inside and transmits light from the LED chip 4, and a cover 9 that protects the entire device 1. The sub-mount substrate 3, the LED chip 4, and the sealing member 5 constitute an LED light source.
[0011]
On the back surface 2b of the mother substrate 2, as shown in FIG. 1C, a plurality of resistance elements 10 and one Zener diode 11 constituting an LED drive circuit to be described later are provided. In FIG. 1, 12A on the left side and 13B on the right side and 12B and 13B on the right side are connection terminals for applying a voltage to the plurality of LED chips 4, and left and right connection terminals according to the direction in which the wiring is drawn when the apparatus 1 is assembled. 12A, 13A, 12B, and 13B are properly used.
[0012]
As shown in FIG. 1A, the plurality of LED chips 4 are arranged on the mother substrate 2 via the submount substrate 3, for a total of 48 in a vertical direction and 12 in a horizontal direction. LED chip 4 is mounted on the sub-mount substrate 3 by Furippuchi-up bonding (FCB). In the LED chip 4, a semiconductor layer such as gallium nitride is stacked on a sapphire substrate that is a transparent insulator, and as shown in FIG. 2, a positive electrode 40 a and a negative electrode are formed on the surface of the semiconductor layer that becomes the lower surface 4 b of the chip 4. 40b is formed, and the bottom surface of the sapphire substrate, which is the top surface 4a of the chip 4, is the light emitting surface. In this embodiment, for example, a GaN (gallium nitride) -based semiconductor that emits ultraviolet light having a wavelength of 380 nm is used.
[0013]
The mother substrate 2 is obtained by printing a wiring pattern on the front surface 2a and the back surface 2b of the base material. The base material of the mother substrate 2 has heat resistance and a low expansion coefficient so as not to cause deformation or a decrease in strength when the submount substrate 3 is mounted. Further, the emission wavelength of the LED chip 4 (for example, ultraviolet rays) A material having a high light reflectance and a low light absorption rate with respect to (wavelength) is preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. Further, when a material having a high light reflectance of about 42% with respect to ultraviolet rays is used as the base material of the submount substrate 3 closer to the LED chip 4 than the mother substrate 2, the light reflectance is higher than that. A low glass epoxy resin of about 10 to 22% may be used. In addition, when importance is attached to heat dissipation and strength, metals such as aluminum and ceramics such as alumina can also be used.
[0014]
The sealing member 5 provides a predetermined light distribution characteristic to the light emitted from the LED chip 4 by sealing the LED chip 4 with a predetermined outer shape. Further, the sealing member 5 is preferably a transparent resin material having durability with respect to the emission wavelength of the LED chip 4. For example, silicone can be used for ultraviolet rays.
[0015]
As shown in FIG. 2A, the spacer 6 is provided with a plurality of circular openings 6a at positions where the plurality of LED chips 4 are arranged, and is formed of an elastic member such as silicone rubber. . Since the spacer 6 is sandwiched between the reflector 7 and the mother substrate 2 by the cover 9, the inside of the device 1 is hermetically sealed, so that dust and moisture can be prevented from the inside of the device 1. Further, with such a configuration, variations or errors in the thickness direction of each component such as the transparent plate 8 can be absorbed, and distortion or warping of the entire apparatus 1 can be prevented or alleviated, and a transparent plate made of glass. 8 can be protected together with the cover 9.
[0016]
The reflector 7 has an opening 7a at a position corresponding to the LED chip 4, and a cone-shaped reflecting surface 7b is formed around the opening 7a as shown in FIG. The reflector 7 is preferably formed of a material having sufficient weather resistance against humidity, heat, ultraviolet rays, and the like, and having a high light reflectance with respect to the emission wavelength of the LED chip 4. In the present embodiment, as shown in FIGS. 1A, 1B, and 2A, a metal plate made of copper, stainless steel, or the like is drawn to form an opening 7a at a position corresponding to the LED chip 4. And the periphery of the opening 7a forms a cone-like reflection surface 7b, and the surface is subjected to a treatment having a high light reflectivity, for example, gloss Ni plating. By providing such a reflector 7, the amount of light with respect to the direction from the chip 4 toward the transparent body 8 (forward direction) can be further improved. In addition, the reflector 7 may plate or vapor-deposit a metal on a resin. Thereby, the weight reduction compared with the thing of the whole metal can be achieved. In addition, the reflector 7 may be formed by bonding a thin metal cover to a substrate such as a resin. As a result, the metal cover can be formed by a method such as drawing of a thin metal plate, so that the material cost and processing cost are low, and the overall weight can be reduced compared to a metal object.
[0017]
The transparent plate 8 is preferably formed of a material having a high transmittance with respect to the emission wavelength (for example, the wavelength of ultraviolet rays) of the LED chip 4. As such a material, for example, glass can be used.
[0018]
As shown in FIG. 1A, the cover 9 has a plurality of openings 9 a having an elongated shape corresponding to the four LED chips 4. The cover 9 is preferably formed from a material having weather resistance and mechanical strength. As such a material, for example, a metal plate such as steel or aluminum can be used.
[0019]
As shown in FIGS. 1A and 1C, the resistance element 10 is disposed between the LED chips 4 on the back surface 2 b of the mother substrate 2 so as to be evenly spaced from each LED chip 4. . As a result, the heat generated by the resistance element 10 does not affect the output reduction / reliability reduction of the LED chip 4, and high reliability is obtained. The resistance element 10 reduces current variation due to the VF difference of each LED chip 4 and limits the current to each LED chip 4.
[0020]
FIG. 3 shows a mounting structure of the LED chip 4 by FCB. The submount substrate 3 has a base material 31, and a positive lead 32 a and a negative lead 32 b are formed on the front surface 31 a of the base material 31, as shown in FIG. As shown in FIG. 5E, positive leads 33a and negative leads 33b are formed, and positive leads 32a and negative leads 32b on the front surface 31a and positive leads 33a and negative leads 33b on the rear surface 31b are formed through-hole plating 34a, Each positive electrode 32 is connected to the positive lead 32a on the front surface 31a, and a positive-polarity display portion 35 for indicating that it is on the positive electrode side extends. In addition, a pair of triangular inspections for inspecting the characteristics of the LED chip 4 by applying a voltage to the positive lead 32a and the negative lead 32b on the surface 31a to a region other than the region where the LED chip 4 is mounted on the surface 31a. Use areas 38a, 38b. These leads 32a, 32b, 33a, 33b and the positive display portion 35 are formed by using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method. For example, Au or the like is formed on a base metal layer such as Cu + Ni. These metal plating layers are laminated. Further, position recognition plating bumps 36a and 36b made of a pair of Au are formed on the diagonal lines of the positive lead 32a and the negative lead 32b on the surface 31a of the substrate 31, and Au is formed on the positive lead 32a and the negative lead 32b on the surface 31a. The mounting plating bumps 37a and 37b are respectively formed. As shown in FIG. 5C, the mounting plating bumps 37a and 37b are, for example, an ellipse or an ellipse that is long in a direction perpendicular to the ultrasonic vibration direction 16 during bonding by ultrasonic waves before the LED chip 4 is mounted. After the LED chip 4 is mounted, it has a circular shape as shown in FIG. These plating bumps 36a, 36b, 37a, and 37b are collectively formed by, for example, photolithography. By forming the mounting plating bumps 37a and 37b as shown in FIG. 5C, the bonding area can be increased and the bonding strength can be improved while preventing a short circuit. The region other than the region where the LED chip 4 is mounted on the surface 31a is an adsorption surface for handling the submount substrate 3 on which the LED chip 4 is mounted via a pair of mounting plating bumps 37a and 37b. .
[0021]
The base material 31 has heat resistance and a low expansion coefficient so as not to cause deformation or a decrease in strength when the LED chip 4 is mounted. Further, the base material 31 corresponds to the emission wavelength (for example, ultraviolet wavelength) of the LED chip 4. A material having a high light reflectance and a low light absorption rate is preferable. As such a material, for example, a glass epoxy resin having a high light reflectance of about 42% with respect to ultraviolet rays can be used. In addition, other insulators such as resin and ceramics may be used according to required characteristics.
[0022]
FIG. 4 shows a wiring pattern on the surface 2 a of the mother board 2. The wiring pattern 20 is formed by using an electrode wiring technique in a normal semiconductor manufacturing technique such as an etching method. For example, the wiring pattern 20 is formed by laminating a metal plating layer such as Au on a base metal layer such as Cu + Ni. In the position where the submount substrate 3 is mounted, a pair of connections in which the positive lead 33a and the negative lead 33b on the back surface 31b of the submount substrate 3 are connected via silver paste, as shown in FIG. Regions 20a and 20b are formed. Further, as shown in FIG. 5C, a test connection region is provided at a plurality of locations (three locations in the present embodiment) in the space other than where the submount substrate 3 is mounted on the surface 2a of the mother substrate 2. 20a and 20b are formed.
[0023]
FIG. 5 shows an LED driving circuit. As shown in the figure, the LED drive circuit includes a connection terminal 12 connected to the anodes of the plurality of LED chips 4, and a plurality of LED chips 4 connected to the plurality of LED chips 4 via a resistance element 10. And a connection terminal 13 connected to the cathodes of the plurality of LED chips 4 and a Zener diode 11 for preventing overvoltage. The Zener diode 11 is not limited to this, and an avalanche diode or other diode can be used.
[0024]
6 to 8 show the manufacturing method of the present embodiment. First, a multi-mount submount assembly substrate 30 is prepared (ST1). That is, as shown in FIGS. 6A, 6B, and 7A, the positive lead 32a and the negative lead 32b are formed on the surface of the base material of the submount aggregate substrate 30, and the positive lead 33a is formed on the back surface. The negative lead 33b is formed, and the positive lead 32a and negative lead 32b on the front surface and the positive lead 33a and negative lead 33b on the back surface are connected by through-hole plating 34a and 34b, respectively. Next, as shown in FIG. 7 (b), a resist 14 is applied, and as shown in FIG. 7 (c), ultraviolet rays (HV) are irradiated from above the mask 15 having the holes 15a. ), A hole 14 a is formed in the resist 14. Next, mounting plating bumps 37a and 37b are formed in the holes 14a of the resist 14 as shown in FIG. At the same time, position-recognizing plating bumps 36a and 36b are also formed. Next, the resist 14 is removed as shown in FIG. In this way, the submount aggregate substrate 30 in which the leads 32a, 32b, 33a, 33b and the plating bumps 36a, 36b, 37a, 37b are formed on the base material is completed.
[0025]
Next, the LED chip 4 as a flip chip is flip-chip bonded onto the submount collective substrate 30, the LED chip 4 is sealed with the sealing member 5 (ST 2), and the light quantity of each LED chip 4 is measured with a dedicated inspection device. And the like are inspected (ST3). At this time, the defective LED chip 4 is marked. Next, the submount aggregate substrate 30 is divided for each LED chip 4 to manufacture a plurality of submount substrates 3 (ST4).
[0026]
On the other hand, a mother substrate 2 on which a plurality of submount substrates 3 are mounted is prepared (ST10). Here, the wiring pattern 20 is formed on the base material of the mother substrate 2. Next, circuit components such as the resistance element 10 and the Zener diode 11 are mounted on the mother board 2 (ST11).
[0027]
Next, the plurality of submount substrates 3 manufactured in step ST4 are mounted on the mother substrate 2 manufactured in step ST11 (ST12). The LED chip 4 is sealed with silicon (ST13). The spacer 6, the reflector 7, the transparent plate 8, and the cover 9 are assembled into the mother board 2 to assemble the LED surface light emitting device 1 (ST 14), and the process is finished with the entire device 1 inspection (ST 15).
[0028]
According to the above embodiment, the submount substrate 3 on which the LED chips 4 are FCB-mounted is manufactured by mounting a large number of LED chips 4 on the multi-mount submount assembly substrate 30 and dividing them. Therefore, productivity can be improved and cost can be reduced. In addition, the plating bump process can be shortened by forming a large number of bumps at a high density on the submount collective substrate 30, thereby reducing the manufacturing cost of the submount substrate 3.
In addition, since the FCB mounting of the LED chip 4 to which other stresses such as pressure are applied in addition to heating is performed on the submount substrate 3, the components to be mounted on the mother substrate 2 and the material of the mother substrate 2 can be freely selected. The degree is increased.
Further, by unifying the sizes of the submount collective substrates 30, it is possible to unify high-precision jigs for FCB mounting.
Further, since the submount substrate 3 is mounted on the mother substrate 2, a general-purpose handling machine can be used, and handling becomes easy.
Further, by forming the bumps by plating, productivity is improved and the outer shape (or the matching hole) of the submount substrate 3 can be used as a reference, so that high positional accuracy can be obtained.
Further, when the mounting plating bumps 37a and 37b and the LED chip 4 are joined by ultrasonic vibration, the mounting plating bumps 37a and 37b become longer in the ultrasonic vibration direction. By making the shape long in the direction perpendicular to, a short circuit can be prevented.
Further, when the submount substrate 3 is downsized and brought close to the LED chip size as much as possible, a chip size package (CSP) referred to as an IC or the like can be manufactured.
In addition, it can be used by general equipment such as a mounter and die bonder even in a process without special and expensive equipment such as a flip chip bonder. In addition, it is possible to apply to a mounting package that is difficult to mount directly in relation to the flip chip bonder and its peripheral jigs due to the shape and form.
In addition, the surface 31a of the submount substrate 3 has a suction surface for handling the submount substrate 3 on which the LED chip 4 is mounted, so that it can be handled in a mold dress (such as dice bonding in the subsequent process). become.
Further, since resin sealing after die bonding and mounting is possible, direct molding with a resin of a silicone type that is very soft and difficult to handle with a machine becomes possible. In addition, the resin sealing can be performed in the shape of the case 9, the reflector 7, or the like, or the shape that is not limited by the space of the submount substrate 3.
In addition, since the characteristic inspection can be performed in a collective state, the number of inspection steps can be reduced.
In addition, since the FCB bare chip mounting is performed in the LED surface light emitting device using a large number of GaN-based LED chips, the luminous efficiency can be improved.
Moreover, since the mother substrate 2 and the submount substrate 3 are made of a material having a high light reflectivity and a low light absorption rate with respect to the emission wavelength of the LED chip 4 to be mounted, the light emission efficiency is increased. Low power can be achieved.
Further, since the Zener diode 11 is provided on the input side of the LED drive circuit, electrostatic breakdown due to the low electrostatic withstand voltage of the GaN-based LED chip 4 can be prevented.
In addition, since the submount substrate 3 on which the LED chip 4 is FCB-mounted can be mounted on the mother substrate 2 after performing the characteristic inspection including the light amount test, the single light emitting device 1 can be easily selected in advance. As a result, it becomes possible to perform selective mounting to alleviate the unevenness in the amount of light, and repair is unnecessary.
In addition, since the sealing member 5 is molded after mounting the sub-mount substrate 3 on which the LED chip 4 is FCB mounted on the mother substrate 2, the shape and material of the sealing member 5 are determined after mounting. Therefore, the selectivity of the shape and material is expanded, and desired light distribution characteristics are easily realized.
Further, since the entire surface light emitting device 1 is protected by the cover 9, reliability and mechanical strength can be ensured.
[0029]
The present invention may be applied to a single LED lamp in which a lead wire, a lead frame, or the like is derived from an LED chip that is FCB mounted on a substrate, and the LED chip is sealed with a sealing member. Further, the present invention may be applied to an image display device in which a plurality of LED chips are arranged in a matrix and the plurality of LED chips are selectively lit according to an image signal.
[0030]
【The invention's effect】
Above-described above, according to the LED light source and the manufacturing method thereof of the present invention, the light from a plurality of LED chips, since the electrodes are emitted from the light emitting surface is not et provided, possible to improve the luminous efficiency Can do. Further, since the pair of bonding bumps are formed by plating, productivity is improved and high positional accuracy is obtained. Further, since the sealing member can be provided after handling the substrate on which the LED chip is mounted, the degree of freedom of the shape and material of the sealing member is increased.
[Brief description of the drawings]
FIG. 1 shows an LED surface light emitting device to which an LED light source according to an embodiment of the present invention is applied, wherein (a) is a front view, (b) is a side view, and (c) is a bottom view.
2A is an enlarged view of part A in FIG. 1A, FIG. 2B is an enlarged view of part B in FIG. 1A, and FIG. 2C is a bottom view of the LED chip;
FIGS. 3A and 3B show the FCB structure of the present embodiment, where FIG. 3A is a surface view of a submount substrate on which an LED chip is mounted, FIG. 3B is a cross-sectional view, and FIGS. The figure which shows the shape of a bump, (e) is a back view of a submount substrate.
4A is a front view of a mother substrate, FIG. 4B is an enlarged view of a portion D in FIG. 4A, and FIG. 4C is an enlarged view of an E portion in FIG.
5A and 5B are diagrams showing an LED drive circuit according to the present embodiment. FIGS. 6A and 6B are diagrams showing a manufacturing process of a submount substrate according to the present embodiment.
FIGS. 7A to 7F are diagrams showing manufacturing steps of the submount substrate according to the present embodiment.
FIG. 8 is a diagram showing a manufacturing process of the LED surface light emitting device of the present embodiment.
FIG. 9 is a cross-sectional view showing a conventional LED light source.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 LED surface light-emitting device 2 Mother board | substrate 2a Front surface 2b Back surface 3 Submount substrate 4 LED chip 4a Positive electrode 4b Negative electrode 5 Sealing member 6 Spacer 6a Opening 7 Reflector 7a Opening 7b Reflecting surface 8 Transparent plate 9 Cover 9a Opening 10 Resistive element 11 Zener diodes 12A, 12B, 13A, 13B Connection terminal 14 Resist 14a Hole 15 Mask 15a Hole 20 Wiring pattern 20a, 20b Connection area 30 Multi-mounting submount collective substrate 31a Front surface 31b Back surface 32a Positive lead 32b Negative lead 33a Positive lead 33b Negative lead 34a, 34b Through-hole plating 35 Positive display part 36a, 36b Position recognition plating bump 37a, 37b Mounting plating bump 38a, 38b Inspection area 40a Positive electrode 40b Negative electrode 100 Substrate 101 Base material 101a Surface 1 01b Side surface 101c Back surface 110A, 110B Lead 120a, 120b Bump 130 LED chip 130a Upper surface 130b Lower surface 131 Reflective layer 140 Transparent resin 150 Underfill resin

Claims (13)

A pair of positive and negative back leads formed on the back surface of the insulating base, and a substrate having a pair of positive and negative front leads connected to the pair of back leads by a pair of metal connecting portions on the surface of the insulating base;
An LED chip having a pair of positive and negative electrodes on a surface facing the substrate, the pair of electrodes being connected to the pair of front leads of the substrate via a pair of bonding bumps;
Before the LED chip is mounted, the pair of bonding bumps are circular or long in a direction perpendicular to the ultrasonic vibration direction when the LED chip is bonded, so that the bump becomes circular after the LED chip is mounted. An LED light source formed in a circular shape and formed on the pair of front leads by plating.   2. The LED light source according to claim 1, wherein the pair of bonding bumps has an elliptical shape or an oval shape that is long in a direction perpendicular to a direction in which the pair of bonding bumps are arranged.   2. The LED according to claim 1, wherein the pair of front leads has a configuration in which bumps for automatic recognition having a predetermined positional relationship with the pair of bonding bumps are collectively formed by plating with the pair of bonding bumps. light source.   The pair of front leads has a configuration in which a pair of inspection areas for inspecting the characteristics of the LED chip by applying a voltage to an area other than the area where the LED chip is mounted on the surface is provided. LED light source.   The LED light source according to claim 1, wherein the LED chip is sealed by a sealing member made of a transparent resin that imparts a predetermined light distribution characteristic to light emitted from the LED chip with a predetermined outer shape. The LED light source according to claim 5 , wherein the substrate has a quadrangular shape, the bottom surface of the sealing member has a quadrangular shape corresponding to the quadrangular shape of the substrate, and a tip portion has a spherical shape.   The LED light source according to claim 1, wherein the pair of metal connection portions is a pair of through-hole plating.   The said board | substrate is a structure of having the adsorption | suction surface for handling the said board | substrate with which the said LED chip was mounted in the area | regions other than the area | region where the said LED chip is mounted on the said surface via the said pair of bonding bumps. Item 1. An LED light source according to Item 1. Forming a pair of positive and negative back leads on the back surface of the insulating base, and a set substrate having a plurality of pairs of positive and negative front leads connected to the pair of back leads by a pair of metal connecting portions on the surface of the insulating base;
A pair of bonding bumps is formed in a plurality of pairs of the front leads of the collective substrate in an oval shape or an oval shape that is long in a direction perpendicular to the ultrasonic vibration direction so as to be circular after the LED chip is mounted. A plurality of LED chips having a pair of positive and negative electrodes on one surface side are mounted on the collective substrate by connecting the pair of electrodes to the pair of bumps,
A method of manufacturing an LED light source, wherein the collective substrate on which the plurality of LED chips are mounted is divided for each LED chip. The method of manufacturing an LED light source according to claim 9, wherein the plurality of pairs of bonding bumps are formed by plating. The LED according to claim 9 , wherein the formation of the plurality of pairs of bonding bumps on the aggregate substrate includes formation of automatic recognition bumps having a predetermined positional relationship with respect to the pair of bonding bumps. Manufacturing method of light source. 12. The method of manufacturing an LED light source according to claim 11, wherein the plurality of pairs of bonding bumps and the automatic recognition bumps are collectively formed by plating. The plurality of LED chips are mounted on the collective substrate by a plurality of sealing members made of a transparent resin that imparts a predetermined light distribution characteristic to light emitted from the LED chips with a predetermined outer shape. The manufacturing method of the LED light source of Claim 9 of the structure including the process of sealing.

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