JP4609846B2 - Method for producing metal fired body, metal particle firing material used therefor, and wiring pattern obtained thereby - Google Patents

Description

The present invention can be applied to conductive parts (conductive paths, bumps, etc.), three-dimensional metal wiring patterns, antenna patterns, heat conductive paths, catalyst electrodes, solder joints, etc. in the manufacture of electronic mounting parts such as printed wiring boards and circuit boards. The present invention relates to a method for producing a metal fired body for forming a metal wiring pattern , a metal particle firing material for mutual fusion of metal particles used when producing the product, and a wiring pattern obtained by the method .

  With the recent remarkable development of fine metal patterning technology by manufacturing technology of fine metal particles, independent dispersion technology, ultra-micro inkjet, precision screen printing, nanoprinting, nanoimprinting, direct circuit drawing using these technologies The method is attracting a great deal of attention as a next-generation electronic packaging component forming technology.

  This direct circuit drawing method is a method of manufacturing electronic mounting parts that have been manufactured through complicated processes such as lithography and etching by direct drawing of metal particles → firing → mutual fusion → conductive, Details thereof are described on page 71 of Non-Patent Document 1. By establishing this method, it is expected that electronic mounting parts such as conductive circuit patterns, bumps, pads, vias, and antenna patterns can be manufactured inexpensively and easily. Furthermore, the use of electronic mounting parts as a heat conduction path is also being studied.

  One of the important steps of this direct circuit drawing method is a step of heat-treating a circuit board on which metal particles are patterned, causing the particles to fuse together, and making the circuit pattern constituted by the particles conductive.

  In the direct circuit drawing method proposed so far, the circuit pattern portion and the base composed of metal particles are subjected to a heat treatment process in which the particles are fused together by a resistance heating furnace using hot air, steam, or heating wire. Patent Document 1 describes that the entire mounting component of the board portion is heat-treated at 150 ° C. to 210 ° C. Similarly, Patent Document 2 describes that the entire mounted component is heat-treated at 150 ° C.

  However, in this conventionally proposed heat treatment method, the underlying substrate portion is heated equally and together with the circuit pattern composed of metal particles, so that the usable underlying substrate has a heat resistant temperature higher than the holding temperature during this heat treatment. There was a problem that it was limited to a high material. Especially when creating electronic components with low resistance, which are indispensable for next-generation ultra-high-speed electronic devices, it is necessary to set the heat treatment conditions at high temperature and long time. In this sense, usable substrate materials are greatly limited. It was a thing.

  Further, in this conventionally proposed heat treatment method, heating takes several tens of minutes, and productivity is low.

Nikkei Electronics Vol. 67, No824, (2002), p67-78. JP 2002-299983 A JP 2004-39956 A

As a firing method of metal particles (including metal nanoparticles) patterned on various substrates, there is a heat treatment by a resistance heating furnace, but in the heat treatment by this resistance heating furnace, only a circuit portion constituted by metal particles can be used. In other words, there is a problem that the entire substrate on which the metal particles are arranged is heated. Therefore, the substrate material that can be used in the direct circuit formation method using metal particles is determined by the relationship between the heat treatment temperature for mutually fusing and conducting metal particles and the heat resistance temperature of the substrate material, and is necessary as an electronic circuit. When the heat treatment temperature is set high in order to realize the high conductivity of the wiring, which is an indispensable requirement, only a substrate having a heat resistant temperature higher than the heat treatment temperature can be used. Furthermore, in the direct circuit drawing method using the metal particles, not only the usable base substrate is limited to a material having a high heat-resistant temperature, but also the problem that the heat treatment of the substrate takes time and productivity is low. there were.
The present invention has been made in view of the above, and a method of manufacturing a metal fired body for forming a metal wiring pattern capable of forming a low-resistance mounting component in a short time even on a substrate material having low heat resistance And a metal particle firing material that can be suitably used in the method, and a wiring pattern obtained by the method .

(1) Metal particles mixed with an electromagnetic wave absorbing sintering aid are applied or surface patterned on a substrate and then irradiated with high frequency electromagnetic waves to selectively generate heat and mutual fusion of the metal particles. A method of forming a metal wiring pattern for firing, wherein the sintering aid has a higher high frequency electromagnetic wave absorption than the substrate, and the metal baking for forming the metal wiring pattern is characterized in that Body manufacturing method.
(2) The sintering aid is at least one carbon material selected from the group consisting of carbon black, carbon nanotubes, carbon fullerene, and VGCF (vapor-grown carbon fiber). A method for producing a metal fired body for forming a metal wiring pattern.
(3) The sintering aid is Cr ₂ O ₃ TiO ₂ , CuO, NiO, Co ₃ O ₄ , MnO ₂ , Α-Fe ₂ O ₃ And V ₂ O ₃ The method for producing a metal fired body for forming a metal wiring pattern according to (1) or (2), wherein the metal wiring pattern is at least one transition metal oxide selected from the group consisting of:
(4) The sintering aid is SnO ₂ , In ₂ O ₃ , GeO ₂ ZnO, MgO, SiO ₂ And the metal wiring pattern according to any one of (1) to (3), wherein the metal wiring pattern is an oxide of at least one typical metal alloy selected from the group consisting of ITO (indium-tin oxide) Method for manufacturing a metal fired body for the purpose.
(5) The metal particles are at least one conductive metal selected from the group consisting of silver, gold, and copper, or an alloy containing the metal as a main component. (1) to (4) The manufacturing method of the metal sintered compact for formation of the metal wiring pattern in any one.
(6) The metal particles are at least one catalyst metal selected from the group consisting of platinum, palladium, nickel, rhodium, and iridium, or an alloy containing the metal as a main component. 4) A method for producing a fired metal body for forming a metal wiring pattern according to any one of 4).
(7) The metal particles are at least one low melting point metal selected from the group consisting of tin, lead, bismuth and zinc, or a solder material whose main component is an alloy made of the metal (1) To (4). A method for producing a fired metal body for forming a metal wiring pattern according to any one of (4) to (4).
(8) The method for producing a metal fired body for forming a metal wiring pattern according to any one of (1) to (7), wherein the metal particles are nanoparticles having an average particle diameter of 1 nm to 100 nm.
(9) The method for forming a metal wiring pattern according to (7), wherein the solder material particles made of a low melting point metal or an alloy of the metal are particles having an average particle diameter of 1 nm to 1 cm.
(10) The frequency of the high-frequency electromagnetic wave irradiated to the metal particles mixed with the electromagnetic wave-absorbing sintering aid is 1 MHz <f <300 GHz, according to any one of (1) to (9) A method for producing a metal fired body for forming a metal wiring pattern.
(11) At least one substrate selected from the group consisting of polyimide, polyamideimide, polyamide, glass epoxy, and polyfluorinated ethylene is used for applying or surface patterning the metal particles mixed with the electromagnetic wave absorbing sintering aid. A method for producing a metal fired body for forming a metal wiring pattern according to any one of (1) to (10), characterized in that the metal substrate is a plastic substrate having two as a main component.
(12) A substrate comprising at least one selected from the group consisting of oxides, glasses, ceramics, metals, and semiconductors, on which the metal particles mixed with the electromagnetic wave-absorbing sintering aid are coated or surface patterned. The method for producing a fired metal body for forming a metal wiring pattern according to any one of (1) to (10), wherein
(13) The present invention is applied to the production of conductive path-to-conductive path connection portions, multilayer wiring boards, bumps, pads, vias, solid metal wiring patterns, or wiring solder joints (1) to (12 The manufacturing method of the metal sintered body for formation of the metal wiring pattern in any one of.
(14) The metal according to any one of (1) to (12), which is applied to manufacture of an antenna, an electronic shielding material, an electronic mounting component including a conductive path and a small electronic component, or an electronic casing A method for producing a metal fired body for forming a wiring pattern.
(15) The metal fired body for forming a metal wiring pattern according to any one of (1) to (12), wherein the metal wiring pattern is applied to production of a catalyst electrode or a heat conduction path Manufacturing method.
(16) A metal particle firing material comprising a sintering aid having electromagnetic wave absorption properties and metal particles, wherein the sintering aid is carbon black, carbon nanotube, carbon fullerene, and VGCF (vapor-grown carbon fiber) At least one carbon material selected from the group consisting of ₂ O ₃ TiO ₂ , CuO, NiO, Co ₃ O ₄ , MnO ₂ , Α-Fe ₂ O ₃ And V ₂ O ₃ At least one transition metal oxide selected from the group consisting of, or SnO ₂ , In ₂ O ₃ , GeO ₂ ZnO, MgO, SiO ₂ And a material for firing metal particles, which is an oxide of at least one typical metal alloy selected from the group consisting of ITO.
(17) In the metal particle firing material, the metal particles are at least one conductive metal selected from the group consisting of silver, gold, and copper, or an alloy platinum, palladium, nickel, rhodium containing these metals as a main component. And at least one catalyst metal selected from the group consisting of iridium, and alloys containing these metals as the main component, or at least one low melting point metal selected from the group consisting of tin, lead, bismuth, zinc, and the like, or these The firing material according to (16), comprising an alloy containing a metal alloy as a main component.
(18) The metal particle firing material according to (15) or (17), wherein the metal particles are nanoparticles having a particle size of 1 nm or more and 100 nm or less.
(19) Furthermore, a resin component that functions as an organic dispersion medium and / or organic binder particles and, if necessary, an organic solvent are added, as described in any of (16) to (18) Material for firing metal particles.
(20) The organic dispersion medium includes at least one selected from the group consisting of amine, alcohol, and thiol capable of coordinating with the metal component of the metal oxide, and the organic binder resin is a butyral resin, an epoxy resin, and a phenol. 1 or more types chosen from the group which consists of resin and a polyimide resin are included, The metal particle baking material as described in (19) characterized by the above-mentioned.
(21) The metal particles prepared on the substrate by the method according to any one of (1) to (12) and mixed with a sintering aid having higher high frequency electromagnetic wave absorbability than the substrate are fired. Metal wiring pattern.
(22) The method according to (21), which is applied to manufacture of a conductive path and a connection portion of the conductive path, a multilayer wiring board, a bump, a pad, a via, a solid metal wiring pattern, or a solder joint portion of wiring. Metal wiring pattern.
(23) The metal wiring pattern according to (21), which is applied to manufacture of an antenna, an electronic shielding material, an electronic mounting component including a conductive path and a small electronic component, or an electronic casing.
(24) The metal wiring pattern according to (21), which is applied to production of a catalyst electrode or a heat conduction path.

Using the method and material of the present invention, the metal particles are coated on the surface of the substrate or patterned and then selectively heated by irradiating a high-frequency electromagnetic wave having a predetermined frequency, so that the complex metal wiring pattern can be bonded to each other. It can be formed by fusing. By using this method and material , the wiring pattern of the present invention can be formed on a substrate . Specifically, an electronic component including a conductive path, an antenna, a bump, a pad, a via, and a multilayer laminated substrate is mounted. An electronic substrate and a heat conduction path can be formed on the substrate. At this time, since the electronic component forming portion is selectively heated, not only a substrate having heat resistance but also a resin substrate having low heat resistance can be used as the electronic component mounting substrate.

The details of the method for heating and mutual fusion of metal particles using high-frequency electromagnetic wave irradiation according to the present invention will be described below. As particulate material constituting the mounting parts such as conductive path or bumps, using a high-frequency electromagnetic wave absorbent excellent mixed sintering aid metal particles, for surface coating or surface patterning the particles on various substrates . Examples of surface coating or patterning methods on a substrate include various circuit patterning methods such as an ink jet method, a nanoprinting method, and a nanoimprinting method. Here, the conductive path includes a current flowing therethrough, a current induced by electromagnetic induction, and the like, and includes a closed circuit and an open circuit. Further, it is assumed that there are no restrictions due to circuit shape or patterning. Since the circuit in the present invention is also used in the same meaning, it is not necessarily limited to a closed circuit.

  Further, when the metal particles are applied in the form of a paste, the composition of the paste can be selected according to the target electronic component and the conductive path forming part. The paste must include at least particles that absorb high-frequency electromagnetic waves and are fused together. In addition to this, a conductive resin or an organic solvent, a conductive resin, and an organic solvent are mixed as necessary. . The purpose of mixing is to improve the dispersion state of particles irradiated with high-frequency electromagnetic waves, improve the adhesion to the substrate, and the like.

  Metal particles that absorb high-frequency electromagnetic waves include conductive metals such as silver, gold, and copper, alloys containing these metals as main components, catalytic metals such as platinum, palladium, nickel, rhodium, and iridium, or these metals as main components. And at least one of solder materials mainly composed of a low melting point metal such as tin, lead, bismuth and zinc or an alloy made of these metals.

In addition, as a sintering aid having excellent high frequency electromagnetic wave absorbability mixed with metal particles in some cases, carbon materials such as carbon black, carbon nanotubes, carbon fullerene, VGCF (vapor grown carbon fiber), Cr ₂ O ₃ , transition metal oxides such as TiO ₂ , CuO, NiO, Co ₃ O ₄ , MnO ₂ , α-Fe ₂ O ₃ , V ₂ O ₃ , SnO ₂ , In ₂ O ₃ exhibiting n-type semiconductivity, At least one of typical metal oxides such as GeO ₂ , ZnO, MgO, and SiO ₂ , or oxides of typical metal alloys such as ITO (indium-tin oxide) is used.

Next, with respect to the mounting board in which the metal particles mixed with baked aid is surface coated or circuit patterning, by carrying out the irradiation of high-frequency electromagnetic waves, is selectively heated and mutual fusing the metal particles child. Conductive parts are formed on various substrates by mutual fusion of the metal particles.

The most notable features of the present invention are the following two. One is that in the direct circuit drawing method using fine metal particles, a high-frequency electromagnetic wave irradiation device is used for the heat treatment (particle mutual fusion) process instead of a resistance heating furnace, and the other is as the particles used is that using high-frequency electromagnetic wave absorbent excellent mixed sintering aid metal particles.

  Material heating by high-frequency electromagnetic wave irradiation is caused by an electromagnetic dielectric phenomenon of electrons or molecules inside the substance of high-frequency electromagnetic waves. The high frequency electromagnetic wave irradiated to the material excellent in electromagnetic wave absorption propagates the inside of the substance while losing energy by rotating, colliding, vibrating, and rubbing electrons or molecules constituting the material. The substance is heated by the movement of electrons and molecules generated at this time. Specifically, in a conductive metal, a vortex flow (eddy current) of conduction electrons is induced, and in a dielectric material, vibration of an electric dipole existing inside the material is induced, thereby heating the material.

  The biggest difference between the heat treatment by a resistance heating furnace using hot air, steam, or heating wire, which has been proposed in the past, and this high-frequency electromagnetic wave heating is that heat is uniformly transmitted from the outside by heat conduction regardless of the material. On the other hand, in the latter, the target material is directly heated, and this heating characteristic varies depending on the substance, so that only the target substance is selectively heated.

Next, differences in heating characteristics due to substances in material heating due to high-frequency electromagnetic waves will be described.
First, since the conductive metal is heated due to Joule heat of eddy currents induced by high-frequency electromagnetic waves, the amount of generated heat is proportional to the 1/2 power of the product of the magnetic permeability and electrical resistance of the material. From this, it is generally known that metals such as iron, tungsten, and tin have particularly good heatability.

  On the other hand, since heating of a dielectric material is caused by vibration of dipole electrons in the material, the amount of heat generated is proportional to the product (dielectric loss coefficient) of the dielectric constant and dielectric loss angle inherent to the material. That is, a substance having a high dielectric loss coefficient is heated with high efficiency by a high-frequency electron wave, whereas a substance having a low dielectric loss coefficient is hardly heated. The value of this dielectric loss coefficient varies depending on the temperature and frequency. In general, materials having a high dielectric loss coefficient include water, ethylene glycol, carbon, transition metal oxides, typical metal oxides exhibiting n-type semiconductivity, etc. In addition, quartz glass, polystyrene, polycarbonate, polyimide, polyfluorinated ethylene, and the like are known as materials having a low dielectric loss coefficient.

In the present invention, it is to select a material such as a metal particles mixed with high Yuden loss factor sintering aid, a lower polyimide dielectric loss factor as a base substrate, to achieve selective heating of particles ing.

  Next, the influence of the frequency f of the high frequency electromagnetic wave used in the present invention will be described. The high frequency electromagnetic wave to be used in the present invention is a high frequency electromagnetic wave having a frequency in the range of 1 MHz <f <300 GHz. This is a range where dielectric loss phenomenon is considered to occur inside the substance due to electromagnetic wave irradiation. The reason why the applied frequency is 1 MHz <f <300 GHz is that the dielectric loss effect itself hardly occurs at a frequency of 1 MHz or less, and at a frequency of 300 GHz or more, the irradiated electromagnetic wave is attenuated at the pole surface and reaches the inside of the substance. This is to prevent intrusion. Among the high frequency electromagnetic waves in this frequency range, those having a frequency range of 10 GHz ≦ f ≦ 300 GHz are easy to obtain the uniformity of the electric field, and from the viewpoint that the discharge phenomenon caused by the non-uniform electric field does not easily occur. It is thought that it is more suitable as an electromagnetic wave to be used.

  Next, the particulate material used in the present invention will be described. The necessary requirements for the particles used in the present invention are metal materials that are fused together by high-frequency electromagnetic wave absorption, and any kind of particles can be used as long as the requirements are satisfied. Metal particles include conductive metals such as silver, gold and copper or alloys containing these metals as main components, and metal particles contain catalytic metals such as platinum, palladium, nickel, rhodium and iridium, or these metals as main components. It is possible to use at least one metal of a solder material whose main component is a low melting point metal such as tin, lead, bismuth, zinc, or an alloy made of these metals.

Here, there is generally no particular restriction on the size of the metal particles to be fused together, but the creation of an electronic mounting component for the purpose of the present invention, particularly a fine mounting component compatible with next-generation high-density electronic devices. From the point of view of the production, if the particle size is large, the particle filling rate decreases, and as a result, the resistivity increases. Furthermore, considering the interfacial energy of the particles, the melting point decrease due to particle size reduction, and the penetration depth of the high frequency electromagnetic wave, the particle size is preferably smaller, for example, the average particle size is preferably 1 nm to 100 nm, and preferably 1 nm to 50 nm. There is more preferably the Most thought.

(Reference example)
A reference example will be described below. The selective heating property of the metal particles when irradiated with high-frequency electromagnetic waves was confirmed by the following experiment. First, as an example of metal particles, an Ag nanoparticle paste (average particle diameter 5 nm, manufactured by Harima Chemicals Co., Ltd.) was prepared. Next, this Ag nanoparticle paste was partially applied on each of a quartz substrate, polyimide, and glass epoxy substrate (see FIG. 1). The applied portion had a thickness of about 50 μm.

In this reference example, the experiment was performed using Ag nanoparticles pasted as metal particles. However, in this reference example , the particles used are not necessarily in the form of paste. However, the use of pasted particles is expected to improve the adhesion between the conductive material formed after high-frequency electromagnetic wave irradiation and the substrate.

  Next, low-frequency electromagnetic waves with an output of 500 W and a frequency (f) = 1 kHz were applied to various substrates on which the Ag nanoparticle paste was partially applied by a low-frequency electromagnetic wave irradiation apparatus shown in FIG. Separately, high-frequency electromagnetic waves with an output of 500 W and a frequency (f) = 28 GHz were also applied to various substrates on which the Ag nanoparticle paste was partially applied by the high-frequency electromagnetic wave irradiation apparatus shown in FIG. Tables 1 and 2 show the results of measuring the temperature change of the portion where the Ag nanoparticle paste was applied and the portion where the substrate was not applied using a thermocouple in each electromagnetic wave irradiation. However, although the temperature change of the part which apply | coated the Ag nanoparticle paste here is a measurement result regarding what was especially apply | coated on the quartz substrate, the temperature change of this particle | grain application part was hardly influenced by the kind of board | substrate.

First, from Table 1, when an electromagnetic wave with a frequency (f) = 1000 Hz is irradiated, even after 120 seconds of irradiation, the temperature rise of the Ag nanoparticle application portion is 5 ° C. or less. It was confirmed that it was hardly heated. As a result, the electromagnetic radiation of the low frequency, which suggests it is unsuitable for selective firing of the metallic particles.

  On the other hand, from Table 2, when a high frequency electromagnetic wave having a frequency (f) = 28 GHz was irradiated, a significant temperature increase was confirmed in the region where the Ag particles were applied. On the other hand, in the substrate portion where the Ag nanoparticles were not applied, the temperature rise was slight regardless of the type of substrate. This result suggests a remarkable selective heating property of Ag nanoparticles.

  As described above, by using metal particles including Ag nanoparticles as an object to be irradiated with the high-frequency electromagnetic wave, and using a substrate with low electromagnetic wave absorption such as quartz substrate, polyimide, and glass epoxy as a substrate material, It was confirmed that only the particle-coated portion can be selectively heated.

(Example 1)
Next, the change in selective heating property due to the mixing of a sintering aid with high electromagnetic wave absorption was verified by the following experiment. First, VGCF (vapor-grown carbon fiber) was prepared as an example of a sintering aid having high electromagnetic wave absorption, and Ag nanoparticle paste was prepared as an example of metal particles, and both were mixed well. Thereafter, the VGCF-Ag nanoparticle mixed paste obtained by the above mixing was partially applied onto a quartz substrate (see FIG. 1). The coating thickness was about 50 μm.

  Next, the quartz substrate partially coated with this VGCF-Ag nanoparticle mixed paste was irradiated with a high frequency electromagnetic wave having an output of 500 W and a frequency (f) = 28 GHz by a high frequency electromagnetic wave irradiation apparatus shown in FIG. Table 3 shows the results of measuring the temperature change of the part where the particles were applied and the part where the particles were not applied using a thermocouple.

  From Table 3, when a high-frequency electromagnetic wave having a frequency (f) = 28 GHz is irradiated to a quartz substrate partially coated with a VGCF-Ag nanoparticle mixed paste, in a region where the VGCF-Ag nanoparticle mixed paste is applied, It was confirmed that the temperature rose significantly more than in the case of the Ag nanoparticle mixed paste in which VGCF as a binder was not mixed (see Table 2). In addition, in the substrate portion where the Ag nanoparticles were not applied, the temperature rise was slight as in the previous experiment. From this result, it was confirmed that the selective heating property of the coated part of the metal particles can be further enhanced by mixing the sintering aid including VGCF.

(Example 2)
Furthermore, for the purpose of confirming the particle firing effect of high frequency electromagnetic wave irradiation heating on metal particles or metal particles mixed with a sintering aid, a quartz substrate coated with an Ag nanoparticle paste (reference example) , VGCF-Ag nano Samples irradiated with high-frequency electromagnetic waves with a frequency (f) = 28 GHz on the quartz substrate (Example) coated with the particle mixed paste ( heating up to 200 ° C. at 50 ° C./min and holding at 200 ° C. for 5 minutes, respectively) The electrical resistance measurement was performed on the particle-coated portion of the control of high-frequency electromagnetic wave output. The electrical resistance was measured by a direct current four-terminal method using a digital multimeter (manufactured by Keithley, model: DMM2000) and a direct current stabilized power supply (manufactured by Kenwood, model: PAR20-4H).

  As a result, the electrical resistance values of the Ag nanoparticle paste application portion and the VGCF-Ag nanoparticle mixed paste application portion of the sample after electromagnetic wave irradiation are ρ = 6.0 μΩ · cm (Ag nanoparticle paste application portion), ρ = A high conductivity of 7.4 μΩ · cm (VGCF-Ag nanoparticle mixed paste application portion) was confirmed. This result suggests the fact that Ag nanoparticles selectively heated by irradiation with high-frequency electromagnetic waves are fused together to form a low-resistance silver conductive film.

  Furthermore, a high frequency electromagnetic wave irradiation heating experiment with the same frequency (f) = 28 GHz as described above was carried out using a quartz substrate coated with Au nanoparticle paste (average particle size 5 nm, manufactured by Harima Chemical Co., Ltd.), VGCF-Au nanoparticle mixed paste. This was also performed on the coated quartz substrate. However, the high frequency electromagnetic wave irradiation was performed by controlling the irradiation output so that the temperature was raised to 250 ° C. at 50 ° C./min and then held at 250 ° C. for 5 minutes.

  As a result, the electrical resistance values of the Au nanoparticle paste application portion and the VGCF-Au-nanoparticle mixed paste application portion of the sample after electromagnetic wave irradiation are ρ = 9.0 μΩ · cm (Au nanoparticle paste application portion) and ρ, respectively. = 9.8 μΩ · cm (VGCF-Au nanoparticle mixed paste application portion) and high conductivity were confirmed. This result suggests that selective heating and mutual fusion of particles by irradiation with high-frequency electromagnetic waves is possible even for Au nanoparticles, and a low-resistance Au conductive film is formed.

  The same effect was also confirmed in a cylindrical protrusion (cylindrical shape, height of about 1 mm, diameter of 2 mm) formed in a bump shape on the polyimide substrate, and it was found that this method can be applied regardless of the shape.

A substrate partially coated with metal particles (or metal particles mixed with a sintering aid) Low frequency electromagnetic wave irradiation device High frequency electromagnetic wave irradiation device

1. Various substrates (quartz glass, polyimide, glass epoxy)
2. 2. Area where metal particles (or metal particles mixed with a sintering aid) are applied 3. Electromagnetic wave irradiation container Conductor 5 5. Heating electrode Turntable 7. Electromagnetic wave

Claims (24)

The metal particles obtained by mixing the sintering aid with electromagnetic waves absorbability, after coating or surface patterning on a substrate, by irradiating a high-frequency electromagnetic waves, heat is generated and mutual fusing the metal particles to the selected択的a method of forming a Rukin genus wiring pattern to firing Te,
A method for producing a metal fired body for forming a metal wiring pattern, wherein the sintering aid has higher radio frequency electromagnetic wave absorbability than the substrate . 2. The metal wiring according to claim 1 , wherein the sintering aid is at least one carbon material selected from the group consisting of carbon black, carbon nanotube, carbon fullerene, and VGCF (vapor growth carbon fiber). A method for producing a fired metal body for forming a pattern. The sintering aid is at least one transition metal oxide selected from the group consisting of Cr ₂ O ₃ , TiO ₂ , CuO, NiO, Co ₃ O ₄ , MnO ₂ , α-Fe ₂ O ₃ , and V ₂ O _3. method for producing a metal sintered body for the formation of the metal wiring pattern according to claim 1 or 2, characterized in that. The sintering aid is _{SnO 2, In 2 O 3,} GeO 2, ZnO, MgO, SiO 2, and ITO - is the oxide of at least one typical metal alloy selected from the group consisting of (indium tin oxide) The method for producing a fired metal body for forming a metal wiring pattern according to any one of claims 1 to 3. Silver wherein the metal particles are gold, and the preceding claims, characterized in that an alloy containing at least one conductive metal or the metal as a main component selected from the group consisting of copper to claim 4 The manufacturing method of the metal sintered compact for formation of the metal wiring pattern of description. Wherein the metal particles are platinum, palladium, nickel, rhodium, and at least one selected from the group consisting of iridium catalytic metal or the metal claim 1, characterized in that an alloy containing as a main component of claim 4 The manufacturing method of the metal sintered compact for formation of the metal wiring pattern in any one. Claim from claim 1 metal particles, wherein tin, lead, bismuth, and at least one low-melting-point metal selected from the group consisting of zinc, or that it is a solder material mainly composed of alloy of the metal A method for producing a metal fired body for forming the metal wiring pattern according to any one of 4 . Method for producing a metal sintered body for the formation of the metal wiring pattern according to claims 1 to claim 7, wherein an average particle diameter of the metal particles are less nanoparticle 100nm least 1 nm. 8. The method for producing a metal fired body for forming a metal wiring pattern according to claim 7 , wherein the solder material particles made of a low melting point metal or an alloy of the metal are particles having an average particle diameter of 1 nm to 1 cm. Method. 10. The metal wiring according to claim 1, wherein the frequency of the high-frequency electromagnetic wave applied to the metal particles mixed with the sintering aid having the electromagnetic wave absorbing property is 1 MHz <f <300 GHz. A method for producing a fired metal body for forming a pattern. Substrate for coating or surface patterning metal particles mixed with a sintering aid having the electromagnetic wave absorbing property, polyimide, polyamideimide, polyamide, glass epoxy, and at least one selected from the group consisting of polyfluoroethylene main The method of manufacturing a metal fired body for forming a metal wiring pattern according to any one of claims 1 to 10 , wherein the metal substrate is a plastic substrate as a component. Said substrate is coated or surface patterning metal particles mixed with a sintering aid having electromagnetic wave absorbing property, oxides is a substrate consisting of at least one of glass, ceramics, selected from the group consisting of metal, a semiconductor The method for producing a fired metal body for forming a metal wiring pattern according to any one of claims 1 to 10 , wherein:   13. The method according to claim 1, wherein the conductive path is applied to a connection portion between conductive paths, a multilayer wiring board, a bump, a pad, a via, a solid metal wiring pattern, or a solder joint portion of wiring. A method for producing a metal fired body for forming a metal wiring pattern according to claim 1.   The metal wiring pattern according to any one of claims 1 to 12, which is applied to manufacture of an antenna, an electronic shielding material, an electronic mounting component including a conductive path and a small electronic component, or an electronic casing. A method for producing a fired metal body for formation.   The method for producing a metal fired body for forming a metal wiring pattern according to any one of claims 1 to 12, wherein the method is applied to production of a catalyst electrode or a heat conduction path. A metal particle sintered material containing a sintering aid and the metal particles having electromagnetic wave absorbing property,
The sintering aid is at least one carbon material selected from the group consisting of carbon black, carbon nanotubes, carbon fullerene, and VGCF (vapor grown carbon fiber);
At least one transition metal oxide selected from the group consisting of Cr ₂ O ₃ , TiO ₂ , CuO, NiO, Co ₃ O ₄ , MnO ₂ , α-Fe ₂ O ₃ , and V ₂ O ₃ , or SnO ₂ , A metal particle firing material which is an oxide of at least one typical metal alloy selected from the group consisting of In ₂ O ₃ , GeO ₂ , ZnO, MgO, SiO ₂ , and ITO. In the metal particle firing material, the metal particles are at least one conductive metal selected from the group consisting of silver, gold, and copper, or an alloy containing these metals as a main component. Platinum, palladium, nickel, rhodium, and iridium At least one catalytic metal selected from the group consisting of: or an alloy based on these metals, or
The firing material according to claim 16, comprising at least one low-melting-point metal selected from the group consisting of tin, lead, bismuth and zinc , or an alloy mainly composed of an alloy made of these metals . The metal particle firing material according to claim 16 or 17, wherein the metal particles are nanoparticles having a particle size of 1 nm or more and 100 nm or less. Furthermore, metal particles sintered according to any one of claims 16 to 18, wherein the resin component which functions as the organic dispersion medium and / or organic binder particles, that the addition of an organic solvent, if necessary material. The organic dispersion medium metal component of the metal oxide and can be coordinated amines include alcohol, and at least one member selected from the group consisting of thiol, the organic binder resin is a butyral resin, epoxy resin, phenol resin, and The metal particle firing material according to claim 19, comprising at least one selected from the group consisting of polyimide resins. Claims 1 created on a substrate by a method according to any one of claims 1 2, wherein the substrate metal wiring mixed metal particles sintering aid having a high frequency electromagnetic wave absorption property is being fired than pattern.   The metal wiring pattern according to claim 21, wherein the metal wiring pattern is applied to manufacture of a connection portion between conductive paths, a multilayer wiring board, a bump, a pad, a via, a solid metal wiring pattern, or a solder joint portion of wiring. .   The metal wiring pattern according to claim 21, wherein the metal wiring pattern is applied to manufacture of an antenna, an electronic shielding material, an electronic mounting component including a conductive path and a small electronic component, or an electronic casing.   The metal wiring pattern according to claim 21, which is applied to manufacture of a catalyst electrode or a heat conduction path.

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