JP4617650B2 - Multi-face photomask and electro-optical device manufacturing method - Google Patents

Description

  The present invention relates to a multi-faced photomask, a method of manufacturing an electro-optical device, and an electronic apparatus equipped with the electro-optical device manufactured by the manufacturing method. The present invention relates to a multi-mask photomask that can be used, a method for manufacturing an electro-optical device, and an electronic apparatus including the electro-optical device manufactured by the manufacturing method.

  Conventionally, when a small display panel is manufactured, the manufacturing efficiency is increased by taking a large number of small display panel substrates from a large substrate (for example, see Patent Document 1). When a large substrate is used, a multi-faced photomask in which a plurality of identical patterns are formed is used in a manufacturing process using an optical lithography technique. In a manufacturing process using a lithography technique, a photomask on which a pattern is drawn is illuminated through an exposure apparatus, and the transmitted light is imaged on a substrate. The resist applied on the substrate is exposed corresponding to the pattern image on the photomask, and becomes a resist pattern (resist mask) through a development process.

JP-A-11-287984

  However, since the multi-chamfer photomask is large, when the multi-chamfer substrate is subjected to batch exposure with the multi-chamfer photomask, the in-plane distribution of light that has passed through the multi-chamfer photomask is not good on the multi-chamfer substrate. It may be uniform. For this reason, there exists a problem that the opening dimension of the pattern formed in the multi-cavity board | substrate will differ in a center part and an outer peripheral part. In recent years, display panels have been increasingly miniaturized, and there is a strong demand for improved pattern accuracy.

  The present invention has been made in view of the above, and a multi-surface photomask capable of making the pattern opening dimensions the same on a multi-surface substrate, an electro-optical device manufactured using the multi-surface photomask, It is another object of the present invention to provide an electronic apparatus equipped with an electro-optical device.

In order to solve the above problems, the present invention provides a multi-panel for full Otomasuku having a plurality of mask area, each of said mask region has a plurality of openings through which light passes is formed, the mask region Are provided in the first to fifth regions arranged concentrically from the center of the multi-face photomask, and the mask region in the same region among the first to fifth regions is The openings have the same size, and the openings are increased in order from the first region to the fifth region . Thus, in multi-surface marks Otomasuku, when performing batch exposure to multi-faced substrate, in-plane distribution of light between the center portion and the peripheral portion of the multi-surface substrate can be the same, the aperture of each pattern The dimensions can be the same. As a result, it is possible to provide a multi-panel for off Otomasuku capable of the opening size of the pattern the same in multiple-piece substrate.

According to a preferred embodiment of the present invention, using a multifaceted full Otomasu click for removing a present onset bright, the electro-optical device substrate, it is desirable to pattern. Thereby, the dimension of the opening part of the board | substrate for electro-optical apparatuses can be made the same.

Further, according to a preferred aspect related to the present invention , it is desirable to mount the electro-optical device manufactured by the method for manufacturing the electro-optical device of the present invention on the electronic apparatus. Thereby, the dimension of the opening part of the board | substrate for electro-optical apparatuses mounted in an electronic device can be made the same.

  Hereinafter, the present invention will be described in detail with reference to the drawings. Note that the present invention is not limited to the embodiments. In addition, constituent elements in the following embodiments include those that can be easily assumed by those skilled in the art or those that are substantially the same. In the following embodiments, a multi-surface photomask for a liquid crystal display device, which is an electro-optical device, will be described as an example of a multi-surface photomask, but a photomask for forming a black matrix (BM) will be described as an example. The mask is not limited to this.

  FIG. 1 is a plan view showing a schematic configuration of a multi-cavity photomask 1 according to an embodiment of the present invention. The multi-faced photomask 1 according to Example 1 is applied to a positive photomask for forming a black matrix. As shown in FIG. 1, the multi-face photomask 1 has a plurality (6 × 8) of mask regions (pattern regions) 2, and each mask region 2 has a plurality of openings 3. . In the example shown in the figure, the opening 3 has a square shape (xum × xum) for ease of explanation. Further, the multiple chamfering is not limited to (6 × 8), and may be less than that, for example, (10 × 10) or more than that.

When a multi-sided substrate is subjected to batch exposure with a positive-type multi-sided photomask, the in-plane distribution of light on the multi-sided substrate may be different between the central portion and the outer peripheral portion. Specifically, since the distribution of light that has passed through the positive-type multi-cavity photomask is narrower in the outer peripheral portion than in the central portion, the opening size of the pattern of the multi-chamber substrate is reduced. Therefore, in the first embodiment, a method of using the positive type black matrix photomask to make the size of the opening 3 of the black matrix the same (Aum) in each panel of the multi-sided substrate will be described.

FIG. 2 is an explanatory diagram for explaining the size of the opening 3 in each mask region 2 of the positive multi-faced photomask 1 according to the first embodiment. In FIG. 2, the 6 × 8 mask region 2 is represented as X ₁ Y _{1 to} X ₆ Y ₈ . In the first embodiment, the size of the opening 3 of each mask region 2 in the positive-type multi-chamfer photomask 1 is formed to increase stepwise (concentrically) from the center to the outer periphery.

Specifically, in FIG. 2, the dimension of the opening 3 of the mask region 2 (X ₃ Y ₄ , X ₃ Y ₅ , X ₄ Y ₄ , X ₄ Y ₅ ) on the concentric circle C 1 is Aum, on the concentric circle C 2. Mask area 2 (X ₂ Y ₃ , X ₂ Y ₄ , X ₂ Y ₅ , X ₂ Y ₆ , X ₃ Y ₃ , X ₃ Y ₆ , X ₄ Y ₃ , X ₄ Y ₆ , X ₅ Y ₃ , X ₅ Y ₄ , X ₅ Y ₅ , X ₅ Y ₆ ), the size of the opening 3 is A + ΔL (where ΔL is a positive constant) um, and the mask region 2 (X ₁ Y ₃ , X ₁ Y ₄ on the concentric circle C3). , X ₁ Y ₅ , X ₁ Y ₆ , X ₂ Y ₂ , X ₂ Y ₇ , X ₃ Y ₂ , X ₃ Y ₇ , X ₄ Y ₂ , X ₄ Y ₇ , X ₅ Y ₂ , X ₅ Y ₇ , X ₆ Y ₃ , X ₆ Y ₄ , X ₆ Y ₅ , X ₆ Y ₆ ), the dimension of the opening 3 is A + 2ΔLum, and the mask region 2 (X ₁ Y ₂ , X ₁ Y ₇ , X ₂ on the concentric circle C4) Y ₁ , X ₂ Y ₈ , X ₃ Y ₁ , X ₃ Y ₈ , X ₄ Y ₁ , X ₄ Y ₈ , X ₅ Y ₁ , X ₅ Y ₈ , X ₆ Y ₂ , X ₆ Y ₇ ) , the size of the opening 3 is A + 3ΔLum, and the outermost peripheral C5 mask area 2 (X ₁ Y ₁ , X ₁ Y ₈ , X ₆ Y ₁ , X ₆ Y ₈ ) Of the opening 3 is A + 4ΔLum. In this way, the size of the opening 3 of each mask region 2 in the positive-type multi-faced photomask 1 is increased stepwise (concentrically) from the center to the outer periphery, thereby allowing the light of the multi-faced substrate to be obtained. The in-plane distribution can be made the same in the central portion and the outer peripheral portion, and the size of the opening portion of the black matrix in all the panels of the multi-sided substrate can be set to Aum.

  FIG. 3 shows a flow for explaining a method of manufacturing a multi-cavity photomask. With reference to FIG. 3, the manufacturing method of a multi-cavity photomask will be described. First, a multi-face mask blank is exposed by a drawing apparatus in accordance with pattern design data and then developed (steps S1 and S2). After development, the resist residue and scum are removed by applying a discum treatment. Thereafter, the Cr film is wet etched to form a mask pattern (step S3). Thereafter, after passing through an inspection process and a correction process (steps S4 and S5), pellicle pasting is performed (step S6). A multi-cavity photomask is completed through the above steps.

  FIG. 4 is a diagram illustrating an example of a process of forming a black matrix using the positive multi-faced photomask 1 of the first embodiment. First, a chromium film 11 is formed on a multi-surface glass substrate 10 by sputtering or the like, and then a positive photoresist 12 is applied on the formed chromium film 11 by a method such as spin coating. Then, using the positive-type multi-cavity photomask 1 of Example 1, batch exposure is performed by an exposure apparatus. In the positive photoresist 12, the light irradiated portion is decomposed and solubilized and dissolved away by development. Thereafter, a black matrix having an opening size of Aum can be formed by performing development, etching, and peeling processes.

  According to the first embodiment, since the size of the opening 3 of the mask region 2 is different between the central portion and the outer peripheral portion of the multi-faced photomask 1, the multi-faced substrate is subjected to batch exposure with the multi-faceted photomask. In this case, the in-plane distribution of light can be made the same at the central portion and the outer peripheral portion of the multi-planar substrate, and the opening size of the black matrix of each panel can be made the same. As a result, it is possible to provide a multi-sided photomask that can make the black matrix opening size of each panel the same on a multi-sided substrate.

  Further, according to the first embodiment, since the dimensions of the opening 2 of the mask region 2 are gradually changed from the center to the outer periphery of the multi-chamfered photomask 1, the multi-chamfer photomask is used as a multi-chamfer substrate. When the batch exposure is performed, the in-plane distribution of light can be made the same at the central portion and the outer peripheral portion of the multi-sided substrate with a simple structure.

  Further, according to the first embodiment, when the multi-faced photomask 1 is a positive mask, the size of the opening of the mask region is larger in the outer peripheral portion than in the central portion. When a positive photomask is used, the opening size of the black matrix of each panel can be made the same in a multi-sided substrate.

In the first embodiment, the case where the multi-cavity photomask 1 is a positive type has been described. In the second embodiment, the case where the multi-cavity photomask 1 is a negative type will be described. When a multi-sided substrate is subjected to batch exposure with a negative multi-sided photomask, the in-plane distribution of light on the multi-sided substrate may be different between the central portion and the outer peripheral portion. Specifically, since the distribution of light that has passed through the negative multi-faced photomask is narrower in the outer peripheral portion than in the central portion, the opening size of the pattern of the multi-faced substrate is increased. Therefore, in the second embodiment, a method of using the negative black matrix forming photomask to make the size of the opening of the black matrix the same (Aum) in each panel of the multi-sided substrate will be described.

In Example 2, the size of the opening of the mask region 2 in multi-panel photomask 1 of negative magnitude rather formed stepwise (concentric) toward the outer periphery from the center. Specifically, in FIG. 2, the dimension of the opening 3 of the mask region 2 (X ₃ Y ₄ , X ₃ Y ₅ , X ₄ Y ₄ , X ₄ Y ₅ ) on the concentric circle C 1 is Aum, on the concentric circle C 2. Mask area 2 (X ₂ Y ₃ , X ₂ Y ₄ , X ₂ Y ₅ , X ₂ Y ₆ , X ₃ Y ₃ , X ₃ Y ₆ , X ₄ Y ₃ , X ₄ Y ₆ , X ₅ Y ₃ , X ₅ Y ₄ , X ₅ Y ₅ , X ₅ Y ₆ ), the size of the opening 3 is A + ΔL (where ΔL is a positive constant) um, and the mask region 2 on the concentric circle C3 (X ₁ Y ₃ , X ₁ Y ₄ , X ₁ Y ₅ , X ₁ Y ₆₇ , X ₂ Y ₂ , X ₂ Y ₇ , X ₃ Y ₂ , X ₃ Y ₇ , X ₄ Y ₂ , X ₄ Y ₇ , X ₅ Y ₂ , X ₅ Y ₇ , X ₆ Y ₃ , X ₆ Y ₄ , X ₆ Y ₅ , X ₆ Y ₆ ) are the dimensions of the opening A + 2ΔLum, and the mask region 2 (X ₁ Y ₂ , X ₁ Y ₇ on the concentric circle C4). _{, X 2 Y 1, X 2} Y 8, X 3 Y 1, X 3 Y 8, X 4 Y 1, X 4 Y 8, X 5 Y 1, _{5 Y 8, X 6 Y 2} , X 6 Y 7 the size of the opening 3 of) A + 3ΔLum, mask the outermost C5 region _{2 (X 1 Y 1, X} 1 Y 8, X 6 Y 1, X 6 The dimension of the opening 3 of Y ₈ ) is A + 4ΔLum. Thus, by size rather formed to graded (concentric) toward the outer periphery from the center of the dimension of the opening of the mask region 2 in multi-panel photomask 1 of the negative, the multi-surface substrate surface of the light The inner distribution can be the same at the center and the outer periphery, and the size of the opening of the black matrix in all the panels of the multi-sided substrate can be Aum.

  FIG. 5 is a diagram illustrating an example of a process of forming a black matrix using the negative multi-faced photomask 1 of the second embodiment. First, after the chromium film 11 is formed on the multi-sided glass substrate 10 by sputtering or the like, a negative photoresist 21 is applied on the formed chromium film 11 by a method such as spin coating. Then, using the negative multi-face photomask 1, batch exposure is performed by an exposure apparatus. In the negative photoresist 22, the light irradiated portion is cross-linked and cured and remains after development. Thereafter, a black matrix having an opening size of Aum can be formed by performing development, etching, and peeling processes.

Further, according to the second embodiment, when a gang photomask 1 was negative mask, the outer peripheral portion, so it was decided to size rather form a dimension of the opening in the mask area than the central portion When a negative photomask is used, the black matrix opening size of each panel can be made the same in a multi-sided substrate.

  In the above embodiment, the case where the multi-faced photomask of the present invention is applied to a photomask for forming a black matrix of a liquid crystal display device has been described. However, the present invention is not limited to this, and a semiconductor device or a liquid crystal display device is used. It can be widely used in lithography processes for manufacturing electro-optical devices such as the above. For example, signal line patterns such as data lines and scanning lines, island-shaped relay layers that relay upper and lower layers, island-shaped light shielding films, pixel electrodes, switching elements such as film transistors and thin-film diodes, and color filters The present invention can be applied to peripheral drive circuits provided on the same substrate, wiring of peripheral drive circuits, and the like.

(Application example to electronic equipment)
Next, a specific example of an electronic apparatus to which the electro-optical device according to the invention can be applied will be described with reference to FIG. FIG. 6A is a perspective view illustrating an example in which the electro-optical device according to the present invention is applied to a display unit of a portable personal computer (so-called notebook computer) 30. As shown in the figure, the personal computer 30 includes a main body 32 having a keyboard 31 and a display 33 to which the electro-optical device according to the present invention is applied. FIG. 6B is a perspective view illustrating an example in which the electro-optical device according to the invention is applied to the display unit of the mobile phone 40. As shown in the figure, the cellular phone 40 includes a plurality of operation buttons 41, a receiving mouth 42, a mouth opening 43, and a display unit 44 to which the electro-optical device according to the present invention is applied.

  The multi-surface photomask according to the present invention can be widely used in a lithography process for manufacturing various devices such as a semiconductor device and an electro-optical device. In addition, the electro-optical device according to the present invention can be used for a transmissive, reflective, and transflective electro-optical device. The electro-optical device according to the present invention is applied to a passive matrix type electro-optical device or an active matrix type electro-optical device (for example, an electro-optical panel including a TFT (thin film transistor) or a TFD (thin film diode) as a switching element). Can be used. Furthermore, the electro-optical device according to the present invention is not limited to a liquid crystal display device, but is an organic electroluminescence device, an inorganic electroluminescence device, a plasma display device, an electrophoretic display device, an electron emission display device (Field Emission Display and Surface-Conduction Electoron). -Emitter Display etc.), LED (Light Emitting Diode) display devices, etc., and can be used for various electro-optical devices that can control the display state for each of a plurality of pixels.

  An electronic device equipped with the electro-optical device according to the present invention includes a mobile phone, a portable information device called PDA (Personal Digital Assistants), a portable personal computer, a personal computer, a workstation, a digital still camera, an in-vehicle monitor, a digital Widely used in electronic devices such as video cameras, LCD TVs, viewfinder type, monitor direct-view type video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, word processors, workstations, video phones, and POS terminals. Can do.

The top view which shows schematic structure of the multi-cavity photomask concerning an Example. Explanatory drawing for demonstrating the dimension of the opening part in each mask area | region of the positive type multi-cavity photomask concerning an Example. The flowchart for demonstrating the manufacturing method of the multi-cavity photomask concerning an Example. The figure which shows an example of the process of forming a black matrix using the positive type multi-cavity photomask concerning an Example. The figure which shows an example of the process of forming a black matrix using the negative type multi-sided photomask concerning an Example. FIG. 3 is a perspective view of a personal computer including the electro-optical device according to the example. 1 is a perspective view of a mobile phone including an electro-optical device according to an example.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Multi-cavity photomask, 2 Mask area | region (Pattern area), 3 Opening part, 10 Multi-surface glass substrate, 11 Chromium film, 12 Positive photoresist, 21 Negative photoresist, 30 Personal computer, 31 Keyboard, 32 Main body Part, 33 display part, 40 mobile phone, 41 operation button, 42 earpiece, 43 mouthpiece, 44 display part

Claims (2)

In a multi-face photomask with a plurality of mask regions,
Each of the mask regions is formed with a plurality of openings through which light passes,
Each of the mask regions is provided in first to fifth regions arranged concentrically from the center of the multi-face photomask.
In the mask region in the same region among the first to fifth regions, the opening is the same size,
The opening is larger from the first region to the fifth region ,
The first region is provided in a central portion of the multi-surface photomask, and second to fifth regions are sequentially provided from the central portion toward the outer periphery .   A method for manufacturing an electro-optical device, comprising: forming a pattern on a substrate for an electro-optical device using the photomask for multi-surface processing according to claim 1.

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