JP4619817B2 - A substrate stand for a film forming apparatus, a film forming apparatus, and a film forming method. - Google Patents

Description

  The present invention relates to a substrate stand for a film forming apparatus, a film forming apparatus, and a film forming method. More specifically, the present invention relates to a substrate table for a sputtering film forming apparatus, a film forming apparatus using the same, and a film forming method performed using the film forming apparatus.

  As an example of a film formation apparatus that performs a film formation process on a substrate, a sputtering film formation apparatus is used. In this sputtering type film forming apparatus, high-speed charged particles generated in the decompressed film forming chamber are incident on a target made of film raw material in the decompressed film forming chamber, and the particles are sputtered out from the target. Charged particles originating from the charged particles or sputtered particles adhere to the substrate, and a film is formed on the substrate. Here, the sputtered charged particles generally mean charged particles sputtered out from the target. The charged particles originating from the sputtered particles are the neutral particles sputtered out or the charged particles generated by the reaction of the charged particles in the plasma in the deposition chamber, or the neutral particles sputtered out. Alternatively, it refers to charged particles generated when charged particles react with the sputtering gas in the deposition chamber.

In such a sputtering system film forming apparatus, when impurities other than the target, that is, particles other than the target component, are sputtered out, the impurities adhere to the substrate, resulting in a deterioration in film forming quality. Therefore, the conventional film forming apparatus is configured such that a structure having a high sputtering rate is not exposed in the chamber so that impurities do not adhere to the substrate (for example, Patent Document 1).
JP-A-7-224378

  On the other hand, in a sputtering film forming apparatus, by applying a bias voltage between the target and the substrate, the charged particles originating from the sputtered charged particles or the sputtered out particles can be effectively removed from the substrate. Can be collected on top.

  However, in order to make the film on the substrate uniform, it is necessary to uniformly apply a bias voltage to the substrate. That is, the holding surface of the film formation apparatus substrate table (hereinafter referred to as the substrate table) on which the substrate is held needs to have a structure in which substantially the same bias voltage is applied over the entire surface. The holding surface of the substrate table is made of a conductor. For this reason, the holding surface of the substrate table has become a source of impurities. Further, there is a problem that the substrate table itself is worn out due to the spatter out from the holding surface of the substrate table.

  The present invention has been made to solve the above-described problems, and can widely apply a bias voltage to the entire substrate, and can prevent generation of impurities and wear of the substrate base. An object of the present invention is to provide a substrate stand for a film apparatus, a film forming apparatus and a film forming method.

  In order to solve the above-mentioned problems, a substrate stand for a film forming apparatus according to the present invention is made of an insulator and has a holding stand having a holding surface for holding the substrate, and is exposed on the holding surface of the holding stand. An electrode piece, and a conductor that penetrates the holding base and is connected to the electrode piece (claim 1). 2. The film forming apparatus according to claim 1, wherein the film forming apparatus includes a film forming chamber, a target made of a film material disposed in the film forming chamber, and the substrate for the film forming device disposed in the film forming chamber. A substrate, and a power source for connecting the conductor and the target, and holding the substrate stage for the film forming apparatus by charged particles sputtered out from the target or charged particles originating from the sputtered-out particles A film is formed on the surface of the substrate held on the surface. Furthermore, the film forming method according to the present invention includes a target made of a film raw material disposed in the film forming chamber, a substrate base for a film forming apparatus according to claim 1 disposed in the film forming chamber, and the conductor. And a power source for connecting the target, and held on the holding surface of the substrate stand for the film forming apparatus by charged particles sputtered out from the target or charged particles originating from the sputtered-out particles A film forming method of a film forming apparatus configured to form a film on a substrate surface, wherein the charge sputtered out from the target while applying a voltage between the target and the substrate stage. A first step of forming a film on the holding surface of the substrate stand for the film-forming apparatus and the surface of the electrode piece using particles, and a second step of holding the substrate on the holding surface of the substrate stand after the first step. And the second After that, a film is formed on the surface of the substrate on the substrate stand for the film forming apparatus using the charged particles sputtered out from the target while applying a voltage between the target and the substrate stand. And a third step (claim 5). With this configuration, the holding surface of the substrate base and the surface of the electrode piece are covered with a film that is a conductor, so that a bias voltage can be applied to the entire substrate through the conductor, the electrode piece, and the substrate base holding surface. In addition, since the substrate table is made of an insulator and a film is formed on the holding surface and the surface of the electrode piece, generation of impurities and wear of the substrate table can be suppressed. Here, the sputtered charged particles refer to charged particles sputtered out from the target. The charged particles originating from the sputtered particles are the neutral particles sputtered out or the charged particles generated by the reaction of the charged particles in the plasma in the deposition chamber, or the neutral particles sputtered out. Alternatively, it refers to charged particles generated when charged particles react with the sputtering gas in the deposition chamber.

  The film forming apparatus substrate stand according to the present invention comprises a heat transfer body that is disposed behind the holding surface of the holding stand and exchanges heat with the holding stand, and a cover that covers the periphery of the heat transfer body, The conductor may penetrate the heat transfer body in an electrically insulated state (Claim 2). With such a configuration, the temperature of the substrate table, and thus the temperature of the substrate during the film forming operation can be adjusted by the heat transfer body, so that film formation defects due to temperature changes can be suppressed. Moreover, generation | occurrence | production of the impurity from a heat exchanger can be suppressed with a cover.

  The substrate stand for a film forming apparatus according to the present invention is made of an insulator, and one end is connected to at least one of the cover, the holding table or the heat transfer body, and the other end is connected to the wall surface of the film forming chamber. It is good to have a support body which is connected and the said conductor penetrates between both ends. With this configuration, since the conductor is covered with the support, generation of impurities from the support can be suppressed. In addition, since the position of the substrate in the deposition chamber can be adjusted by adjusting the length of the support, the position of the substrate table can be adjusted to a position where film formation on the substrate becomes efficient. .

  As described above, the present invention can widely apply a bias voltage to the entire substrate and can prevent the generation of impurities and the wear of the substrate base, thereby suppressing nonuniformity of the film on the substrate. In addition, it is possible to suppress the contamination of impurities during film formation and the frequency of replacing the substrate stage.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

(Embodiment)
FIG. 1 is a schematic diagram showing a schematic configuration of a film forming apparatus according to an embodiment of the present invention.

  As shown in FIG. 1, in the film forming apparatus 200 according to the present embodiment, a target 30 made of a film material is opposed to the target 30 in a sealed internal space (film forming chamber) 21 in the chamber 20. Thus, the substrate table 100 on which the substrate P is held is disposed on the holding surface of the holding table 1. The chamber 20 is composed of a conductive wall and is electrically grounded.

  The film forming chamber 21 is configured to be decompressed by a vacuum pump 70 and to be supplied with an appropriate amount of sputtering gas by a sputtering gas supply device 80. These intake and exhaust passages are configured to be shut off and sealed by valves 71 and 81.

  The target 30 and the substrate base 100 arranged in the film forming chamber 21 are electrically connected by a wiring 40 that connects the target 30 and the substrate base 100. The power supply 50 connected to the wiring 40 is a high-frequency power supply or a DC power supply, and applies a discharge voltage between the target 30 and the substrate base 100. As a result, an ionization state due to discharge is caused in the film forming chamber 21 to generate fast charged particles, and the charged particles are sputtered out from the target 30 by the fast charged particles incident on the target 30.

  Further, the target 30 is grounded via a bias power source 60. As a result, a bias voltage with respect to the chamber 20 is applied to the substrate table 100, so that charged particles sputtered out or charged particles originating from the sputtered particles effectively adhere to the holding surface of the substrate table 100. As a result, a film is formed.

  A heat medium circulation device 16 is connected to the substrate table 100 so that the heat medium is circulated through the substrate table 100. Specifically, the heat transfer body 4 is disposed inside the holding table 1 and the cover 7 (see FIG. 3), and each of the pair of connection ports 5 formed on the heat transfer body 4 is made of an insulating material. One end of the flexible tube 15 is connected. The other end of the tube 15 is connected to a pair of connection ports 17 formed so as to penetrate the wall of the chamber 20, and the pair of connection ports 17 are respectively connected to the heat medium circulation device 16. Thus, the heat medium is circulated so as to flow through the heat transfer body 4. Here, water is used as the heat medium. The heat medium may be a fluid having excellent heat conductivity, and for example, a fluorine-based liquid or a gas such as helium gas may be used. As a result, the temperature of the substrate table 100, and hence the temperature of the substrate P during the film forming operation, is adjusted by circulation of the heat medium, so that film formation defects due to temperature changes can be suppressed.

  Next, the structure of the substrate table 100 will be described.

  First, FIG. 2A is a perspective view of the substrate base for the film forming apparatus of FIG. 1, and FIG. 2B is a top view of the substrate base of FIG. In FIG. 2A, for the convenience of explanation, the mounting portion of the substrate base 100 is shown in an exploded manner.

As shown in FIG. 2 (a), in the substrate stand 100 according to the present embodiment, the insulating material, here the back of the holding surface of the disc-like holding stand 1 made of Teflon (registered trademark), here the lower transmission. A thermal body 4 is arranged. The holding base 1 may be constituted by ceramic because the circuits are configured by an insulator, alumina (Al ₂ O _3). Furthermore, since the holding table 1 only needs to have at least a surface formed of an insulator, the surface of the metal plate may be formed by coating an insulator such as PTFE or Al ₂ O ₃ .

  The heat transfer body 4 is formed with two connection ports 5 and a heat medium flow path (not shown) connecting the two connection ports 5. That is, the heat medium flows through the heat transfer body 4 through the connection port 5 and the heat medium flow path. A tube 15 is connected to the connection port 5 to configure a heat medium supply and discharge path. As a result, the temperature of the substrate table 100, and hence the temperature of the substrate P during the film forming operation, can be adjusted by the heat transfer body 4, so that film formation defects due to temperature changes can be suppressed.

  Further, a cover 7 is disposed so as to cover the lower and side portions of the heat transfer body 4 so as to come into contact with the peripheral edge of the lower surface of the holding table 1. The cover 7 is made of an insulating material. Thereby, since the heat transfer body 4 is covered with the holding table 1 and the cover 7, spatter-out from the heat transfer body 4 by the high-speed charged particles in the film forming operation is prevented, and impurities are generated from the heat transfer body 4. Can be suppressed.

  The holding table 1, the heat transfer body 4 and the protective cover 7 are supported by a lower insulator (support body) 8. A conductor post (conductor) 9 is inserted into the lower insulator 8, and the upper end of the conductor post 9 passes through a through hole 1 </ b> B penetrating the holding base 1 and is an electrode piece 2 accommodated in the recess 1 </ b> A by a spiral 10. Connected with.

  The lower portion of the conductor post 9 extends downward from the lower insulator 8, and an insulating spacer 12 is fitted into this, and the lower end portion of the conductor post 9 is formed with a spiral groove, and the nut 11 is screwed together. Yes. A terminal 41 is mounted between the nut 11 and the insulating spacer 12, and a wiring 40 is connected to the terminal 41. A wall of the chamber 20 is sandwiched between the insulating spacer 12 and the lower insulator 8 (see FIG. 1). As a result, the electrode piece 2 is electrically connected to the outside through the conductor support 9, the terminal 41 and the wiring 40. Further, since the conductor support 9 is covered with the lower insulator 8 and the insulating spacer 12, spatter out from the conductor support 9 due to high-speed charged particles in the film forming operation is prevented, and the generation of impurities from the conductor support 9 is prevented. Can be suppressed.

  A film 19 is formed on the holding surface of the holding table 1 of the substrate table 100 on which the substrate P is held and the surface of the electrode piece 2. As shown in FIG. 1, the film 19 is formed by using charged particles sputtered out from the target 30 or charged particles originating from the sputtered particles in the film forming chamber 21.

  Here, as shown in FIG.2 (b), the holding stand 1 is formed in disk shape, and the upper surface comprises the holding surface. The electrode pieces 2 are arranged so as to be evenly spaced from the center point of the holding surface on the same circumference, that is, so that the center angles are equal. Here, the three electrode pieces 2 are attached to the holding surface by the spiral 10. In addition, the holding surface is provided with a recess 1A in which the electrode piece 2 can be embedded so that the surface of the electrode piece 2 is positioned substantially in the same plane as the holding surface. As a result, the film 19 is formed in the same plane, so that the substrate P held on the holding surface of the holding table 1 is in flat contact with the film 19 and the bias voltage applied to the electrode piece 2 is the substrate P. Thus, a uniform film can be formed on the substrate P.

  FIG. 3 is an exploded perspective view showing an exploded structure of the film forming apparatus substrate stand of FIG. As shown in FIG. 3, the electrode piece 2 is disposed in the recess 1 </ b> A, and the conductor support 9 is passed through a through hole 1 </ b> B that is drilled so as to connect the recess 1 </ b> A and the lower surface of the holding table 1. A spiral hole is formed in the upper end of the conductor support 9, and the electrode piece 2 is attached to the upper end of the conductor support 9 by the spiral 10.

  An upper insulator 3 is fitted to the upper end portion of the conductor support 9 extending below the holding base 1 so as to prevent electrical conduction between the heat transfer element 4 and the conductor support 9. 4 is arranged. Here, the through-hole 4C is provided in the disc-shaped heat transfer body 4, and the upper insulator 3 is processed into a shape in which the upper insulator 3 is accommodated in the upper part of the through-hole 4C. In addition, the lower end of the through hole 4C is processed into a shape in which the upper end portion of the lower insulator 8 is accommodated. As a result, the conductor support 9 is separated from the heat transfer body 4 by the upper insulator 3 and the lower insulator 8.

  And the cover 7 is joined so that the lower surface and side part of the heat exchanger 4 may be coat | covered, and the lower surface peripheral part of the holding stand 1 may be contacted. The cover 7 is formed with a through hole 7A drilled so as to correspond to the connection port 5 and a through hole 7B drilled so as to correspond to the through hole 4C of the heat transfer body 4. The connection port 5 on the lower surface of the heat transfer body 4 extends downward from the through hole 7A of the cover 7, and the tube 15 is connected to the extended portion. Further, the conductor support 9 extending downward from the through hole 4C of the heat transfer body 4 is passed through the through hole 7B.

  A lower insulator 8 is fitted to the conductor support 9 extending below the cover 7. The lower insulator 8 has a sheath shape having flange portions in the vicinity of the upper end and the lower end, and the upper end is passed through the through hole 7B of the cover 7, and the flange portion in the vicinity of the upper end is in contact with the lower surface of the cover 7. Further, the flange near the lower end is in contact with the inner surface of the chamber 20 (see FIG. 1). Thus, the lower insulator 8 has a function of covering the conductor support 9 and supporting the holding base 1, the heat transfer body 4, and the cover 7. Thereby, since the conductor support | pillar 9 is coat | covered with the lower insulator 8 which is a support body, generation | occurrence | production of the impurity from a support body (lower insulator 8) can be suppressed. In addition, since the position of the substrate P in the film forming chamber 21 can be adjusted by adjusting the length of the support (lower insulator 8), the film can be efficiently formed on the substrate P. The position of the substrate table 1 can be adjusted.

  A spiral groove is cut at the lower end of the conductor post 9 and is fixed to the chamber 20 from the outside of the chamber 20 through the insulator spacer 12 and the terminal 41 while being insulated by the nut 11. A wiring 40 is connected to the terminal 41.

  Next, a film forming method using the film forming apparatus 200 will be described with reference to FIG.

  First, a carry-in / out port (not shown) is closed, and the film forming chamber 21 is sealed. Then, the valve 71 is opened and the inside of the film forming chamber 21 is decompressed by the vacuum pump 70. Then, the valve 81 is opened, and an appropriate amount of sputtering gas is supplied into the film forming chamber 21 by the sputtering gas supply device 80.

  Then, a discharge voltage is applied between the target 30 and the substrate base 100 by the power supply 50 connected to the wiring 40, and charged particles sputtered out from the target 30 or charged particles originating from sputtered out particles. Thus, a film is formed on the holding surface of the holding table 1 and the surface of the electrode piece 2 of the substrate table 100 (first step). The sputtered charged particles are charged particles sputtered out from the target. The charged particles originating from the sputtered particles are the neutral particles sputtered out or the charged particles generated by the reaction of the charged particles in the plasma in the deposition chamber, or the neutral particles sputtered out. Alternatively, it refers to charged particles generated when charged particles react with the sputtering gas in the deposition chamber.

  Next, the substrate P is carried into the film forming chamber 21 from a carry-in / out port (not shown), and the substrate P is held on the holding surface of the holding table 1 of the substrate table 100 (second step). When the reduced pressure state in the film forming chamber 21 is changed during the loading / unloading operation of the substrate P, the vacuum pump 70 and the sputtering gas supply device 80 are operated again to recover the reduced pressure state in the film forming chamber 21. Is done.

  Then, a discharge voltage is applied again between the target 30 and the substrate base 100 by the power source 50 connected to the wiring 40, and it originates from charged particles sputtered out from the target 30 or sputtered out particles. A film is formed on the surface of the substrate P by the charged particles (third step).

  Then, the substrate P on which a film is formed from an unillustrated unloading / unloading port is unloaded from the film forming chamber 21, and a new substrate P is loaded into the film forming chamber 21, so that the second step and the third step are performed. Repeated. Note that if the consumption of the film is confirmed on the holding surface of the holding table 1 and the surface of the electrode piece 2 of the substrate table 100, the first step is appropriately performed according to the judgment of the user of the film forming apparatus 200. Thereby, the film of the holding surface of the holding table 1 of the substrate table 100 and the surface of the electrode piece 2 can be maintained.

  As described above, since the holding surface of the substrate base 100 and the surface of the electrode piece 2 are covered with the film 19 as a conductor, a bias voltage is applied to the entire substrate P widely through the conductor support 9, the electrode piece 2, and the substrate base 100 holding surface. Can be applied. Moreover, since the board | substrate base 100 is comprised with the insulator and the film | membrane is formed in the holding surface and the surface of the electrode piece 2, generation | occurrence | production of an impurity and wear-out of the board | substrate base 100 can be suppressed.

  As mentioned above, although embodiment of this invention was described in detail, this invention is not limited to the said embodiment. For example, the holding surface of the holding table 1 may be rectangular instead of circular. Further, the number of electrode pieces 2 is not limited to three but may be three or more. That is, it is sufficient that the potential is evenly applied to the holding surface according to the planar shape of the holding surface of the substrate base 100.

  Further, the substrate table 100 and the target 30 can be arranged not only in the vertical direction but also in any direction. In this case, the substrate P is held on the holding surface of the substrate table 100 by general means such as a fitting groove.

  Furthermore, although the parallel plate type is shown as an example of the sputtering apparatus in the above embodiment, a film forming apparatus using other charged particles such as sputtering by a plasma gun and sputtering by an ion gun has been put into practical use. The present invention can be widely applied to a film forming apparatus using these charged particles.

  The substrate stand for film forming apparatus, the film forming apparatus, and the film forming method of the present invention suppress the non-uniformity of the film on the substrate, the mixing of impurities during the film forming, and the replacement frequency of the substrate stand for the film forming apparatus. It is useful in that it can.

It is a schematic diagram which shows the structure of the outline of the film-forming apparatus which concerns on Embodiment 1 of this invention. 2A is a perspective view of the substrate base for the film forming apparatus in FIG. 1, and FIG. 2B is a top view of the substrate base in FIG. 2A. It is a disassembled perspective view which decomposes | disassembles and shows the assembly structure of the board | substrate stand for film-forming apparatuses of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Holding stand 1A Electrode piece accommodating part 1B Through-hole 2 Electrode piece 3 Upper insulator 4 Heat-transfer body 4A Upper frame 4B Lower frame 4C Through-hole 5 Connection port 7 Cover 7A, 7B Through-hole 8 Lower insulator 9 Conductor support | pillar DESCRIPTION OF SYMBOLS 10 Spiral 11 Nut 12 Insulating spacer 15 Tube 16 Heat medium circulation device 17 Connection port 19 Membrane 20 Chamber 21 Deposition chamber 30 Target 40 Wiring 41 Terminal 50 Power supply 60 Bias power supply 70 Vacuum pump 71, 81 Valve 80 Sputter gas supply device 100 ( Deposition device) Substrate stand 200 Deposition device P Substrate

Claims (5)

A holding base made of an insulator and having a holding surface on which a substrate is held;
An electrode piece disposed exposed on the holding surface of the holding table;
A substrate base for a film forming apparatus, comprising: a conductor penetrating the holding base and connected to the electrode piece. A heat transfer body disposed behind the holding surface of the holding table and exchanging heat with the holding table;
A cover covering the periphery of the heat transfer body,
The substrate stand for a film forming apparatus according to claim 1, wherein the conductor penetrates the heat transfer body in an electrically insulated state. A support composed of an insulator, one end connected to at least one of the cover, the holding table or the heat transfer body, the other end connected to the wall surface of the film forming chamber, and the conductor penetrating between both ends. The substrate stand for film forming apparatuses according to claim 2, having a body. A deposition chamber;
A target made of a film raw material disposed in the film forming chamber;
The substrate stand for a film forming apparatus according to claim 1, which is disposed in the film forming chamber;
A power source for connecting the conductor and the target provided on the substrate base for the film forming apparatus ,
The film is formed on the surface of the substrate held on the holding surface of the substrate stage for the film forming apparatus by charged particles sputtered out from the target or charged particles originating from the sputtered particles. Deposition device. A deposition chamber;
A target made of a film raw material disposed in the film forming chamber, a substrate base for a film forming apparatus according to claim 1 disposed in the film forming chamber, and a conductor provided on the substrate base for the film forming apparatus. A power source for connecting the target, and a substrate held on a holding surface of the substrate table for the film forming apparatus by charged particles sputtered out from the target or charged particles originating from sputtered-out particles A film forming method using a film forming apparatus configured to form a film on a surface,
A film which is a conductor on the holding surface of the substrate base for the film forming apparatus and the surface of the electrode piece using the charged particles sputtered out from the target while applying a voltage between the target and the substrate base. Forming a first step;
After the first step, a second step of holding the substrate on the holding surface of the substrate table;
After the second step, while applying a voltage between the target and the substrate table, a film is formed on the substrate surface on the substrate table for the film formation apparatus using the charged particles sputtered out from the target. And a third step of forming the film.

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