JP4628337B2 - Power semiconductor module - Google Patents

Description

  The present invention relates to a power semiconductor module used for power conversion.

As described in Patent Documents 1 to 3, a three-phase bridge circuit composed of a plurality of diodes is incorporated and used in a power converter.
A single circuit diagram of the three-phase bridge circuit is shown in FIG. FIGS. 16B and 16C are external views of a conventional single power semiconductor module in which the three-phase bridge circuit 70 is packaged. 16B is a top view, and FIG. 16C is a front view. As shown in FIGS. 16B and 16C, the conventional power semiconductor module 71 has a diode chip constituting the three-phase bridge circuit 70 shown in FIG. The enclosing case 72 and the lid 75 are combined into a box shape. External terminal portions 73a to 73e for taking out the electrodes P, N and AC1 to AC3 of the three-phase bridge circuit 70 are arranged on the upper surface of the lid 75. External terminal portions 73a to 73c corresponding to the electrodes AC1 to AC3 are arranged in a horizontal row on one side. The external terminal portions 73d and e corresponding to the electrodes P (+) and N (−) are arranged in a horizontal row on one side where the external terminal portions 73d and e remain. The back surface of the metal substrate 74 is exposed and functions as a heat sink. On the side of the power semiconductor module 71, a fixing notch 76 and a hole 77 are formed through the metal substrate 74 and the outer case 72.

  A tabular circuit corresponding to one arm of the three-phase bridge circuit 70 is shown in FIGS. 17 (a1) and (a2). The tabular circuit 80a shown in FIG. 17 (a1) and the tabular circuit 80b shown in FIG. 17 (a2) have opposite polarities of the diode D1. FIGS. 17B and 17C are external views of a conventional single power semiconductor module in which the single tabular circuit 80a or 80b is packaged. FIG. 17B is a top view and FIG. 17C is a front view. As shown in FIGS. 17 (b) and 17 (c), in the conventional power semiconductor module 81, the external terminal portions 82a to 82c corresponding to the electrodes 1 to 3 are arranged in a horizontal row and are fixed to both sides. Holes 83, 83 are formed.

  FIG. 18 shows an external view of another conventional power semiconductor module in which the tabular circuit 80b is packaged. 18A is a top view and FIG. 18B is a front view. As shown in FIG. 18 (b), even in the conventional power semiconductor module 91, external terminal portions 92a to 92c corresponding to the electrodes 1 to 3 are arranged in a horizontal row, and fixing holes 93 are provided on both sides. , 93 are formed.

In the power semiconductor module as described above, downsizing (reduction in area and thickness) is required without missing a general example.
However, in order to reduce the area of the module while ensuring the cross-sectional area required for the conductor parts such as the external lead-out terminals, the distance between the external terminals and between the external terminals and the heat sink must be shortened. Therefore, the insulating property is reduced. Therefore, as shown in Patent Documents 4 and 5, inventions have been proposed in which an insulating wall is provided upright on the upper surface of a module on which external terminals are arranged to ensure an insulation creepage distance.

  By filling and hardening the resin in the molding die provided with the external lead-out terminals, it is possible to efficiently produce a resin-made outer case in which the intermediate part of the external lead-out terminals is buried and held.

By using one unit as the power semiconductor module that constitutes the above three-phase bridge circuit as a unit, or installing several necessary units and connecting them in parallel with each other, various current sizes can be obtained. Can be configured to respond.
Japanese Patent Laid-Open No. 7-308069 JP 2004-364345 A JP 2005-102443 A JP 2003-046035 A JP 7-142658 A

However, the above-described conventional technology has the following problems.
In the above prior art, a method of assembling through an insertion hole provided in the lid at the end of the external lead-out terminal may be used. In that case, the outer case and the lid are positioned via the external lead-out terminal. However, the positional accuracy of the external lead-out terminal is not good with respect to the molding accuracy of the surrounding case and the lid. Therefore, the positional accuracy between the outer case and the lid body is deteriorated depending on the positional accuracy of the external lead terminal.
In order to allow the positional accuracy of the external lead-out terminal, a margin is required for the size of the insertion hole of the lid. In this case, even if the end portion of the external lead-out terminal is inserted into the insertion hole of the lid, the portion to be bent at the end portion of the external lead-out terminal is not supported by the resin, and the bend formation is accurately and stably performed. It can be difficult to do.
In addition, since the end portion of the external lead-out terminal is exposed at a position lower than the upper surface of the lid, the structure is easily eroded by water or the like.

  Further, in the above-described prior art, the width of the module becomes long because both sides where the fixing holes and the like are arranged are not used as spaces for arranging the external terminals.

Further, in the power semiconductor module that constitutes the conventional three-phase bridge circuit, since the external terminals are arranged in two horizontal rows, the wiring bar that connects the external terminals and the external circuit can be drawn out only to one side. .
In such a conventional external terminal arrangement, when a necessary number of power semiconductor modules are installed and connected in parallel to each other, the structure of the wiring bar is complicated in order to ensure insulation from other poles. There is a fear.

The present invention has been made in view of the above problems in the prior art, and an object thereof is to assemble a power semiconductor module with high accuracy.
It is another object of the present invention to meet the requirements for the arrangement of power semiconductor modules in a power conversion device or the like in which the power semiconductor modules are incorporated.

The invention according to claim 1 for solving the above-described problems includes a heat sink,
A thin-film wiring pattern laid on the heat sink via an insulating material;
A semiconductor chip mounted on the wiring pattern and an outer edge of the heat radiating plate are fitted with an opening at one end, and an outer case made of a resin in a frame shape of both ends having a peripheral wall surrounding the wiring pattern forming region; and ,
An intermediate part is embedded and held in the outer case, one end constitutes an internal terminal part connected to the wiring pattern, and the other end constitutes an external terminal part,
A resin lid covering the opening at the other end of the outer case,
The outer case has a convex portion on the end surface on the other end side of the peripheral wall,
An end portion of the external lead terminal with the external terminal portion extends to the outside from the tip of the convex portion,
The lid has an insertion hole that fits into the convex portion,
The tip of the convex part protrudes outside from the insertion hole ,
A three-phase bridge circuit in which the semiconductor chip is a diode chip is configured, and the external terminal portion is composed of five terminals including one anode external terminal portion, one cathode external terminal portion, and three AC input external terminal portions. And
Of the five terminals, four terminals including the three AC input external terminal portions are unevenly distributed on one side in the longitudinal direction and arranged in one row in the longitudinal direction,
The three AC input external terminal portions are continuously arranged without passing through other external terminal portions,
In the power semiconductor module, the anode external terminal portion and the cathode external terminal portion are arranged in a direction perpendicular to the longitudinal direction at one end portion in the longitudinal direction .

In the invention according to claim 2, a land portion on which the external terminal portions are mounted is formed on the lid body so as to be raised,
Each land part is formed with an insertion hole into which the convex part is inserted ,
2. The power semiconductor module according to claim 1, wherein a partition wall is formed between one land portion of the lid and the land portion adjacent to the land portion in the longitudinal direction .

According to the first aspect of the present invention, the end surface of the peripheral wall of the outer case has a convex portion, the end portion having the external terminal portion of the external lead-out terminal extends to the outside from the tip end of the convex portion, and the lid Since the body has an insertion hole that fits into the convex portion, the position accuracy between the outer case and the lid does not depend on the position accuracy of the external lead-out terminal, and the outer case according to the molding accuracy of the outer case and the cover body. The case and the lid can be assembled with high accuracy.
According to the first aspect of the present invention, since the end portion of the external lead terminal having the external terminal portion extends outward from the tip of the convex portion of the outer case, the external lead terminal is connected to the convex portion. Is supported, and the bending of the external terminal portion can be performed accurately and stably.
According to the first aspect of the present invention, since the tip of the convex portion of the outer case protrudes outside from the insertion hole of the lid, the end of the external lead-out terminal is higher than the top surface of the lid. The portion is exposed, and erosion due to water or the like from the boundary between the external lead-out terminal and the outer case is prevented.

According to the invention described in the claims 1, in the power semiconductor module configured three-phase bridge circuit, since not arranged other external terminal portion in a position parallel to the three AC input external terminal portions arranged in a row A wiring bar connected to each of the three AC input external terminal portions can be pulled out on both sides. As a result, the necessary number of power semiconductor modules can be juxtaposed to connect each other's AC input external terminals in parallel with a straight wiring bar, ensuring insulation from other poles, and the bypass shape of the wiring bar Such a complicated wiring structure is not required, and a plurality of power semiconductor modules can be arranged in a smaller space.

According to the second aspect of the present invention, the insulation creepage distance between adjacent external terminal portions can be increased.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

[First Embodiment]
First, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a top view (a) and a BB sectional view (b) showing a power semiconductor module according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line AA. FIG. 3 is a top view (a) of the Cu heat sink and a top view (b) of the wiring board on which the diode chip is mounted. FIG. 4 is a top view (a) of the outer case and a top view (b) of the lid. FIG. 5 is a cross-sectional view taken along line AA of the outer case (a), a cross-sectional view taken along the line BB (b), a cross-sectional view taken along the line CC, and a cross-sectional view taken along the line DD. FIG. 6 is a cross-sectional view taken along line AA of the lid (a) and a cross-sectional view taken along line BB (b).

  The power semiconductor module of the present embodiment includes a Cu heat sink 1, a wiring board 2, an enclosing case 3, and a lid 4.

  As shown in FIG. 3A, a fixing hole 11 is provided at the center of both side ends of the Cu heat sink 1.

  As shown in FIG. 3B, the wiring board 2 is obtained by laying a thin-film wiring pattern 23 on a ceramic insulating substrate 21. Six diode chips 26, 26,... Are mounted on the wiring board 2. Prior to the case assembling process, as shown in FIG. 3B, the electrodes formed on the back surface of the diode chip 26 are bonded to the wiring pattern 23 and are electrically and mechanically connected. The wiring pattern 23a corresponds to an anode. The wiring pattern 23b corresponds to a cathode. The wiring patterns 23c, 23d, and 23e correspond to AC input electrodes.

  As shown in FIG. 4 (a), the outer case 3 has a frame shape with openings at both ends, and the outer shape of the frame is substantially rectangular. The central part of both end portions of the peripheral wall 32 of the outer case 3 constitutes a recessed wall part 32a. The recessed wall portion 32a is for making the fixing hole 11 of the Cu heat radiating plate 1 outside the case and allowing the bolt to be inserted into the fixing hole 11 from the outside.

As shown in FIGS. 4A and 5, a terminal holding convex portion 33 is formed on the end surface of the peripheral wall 32 of the outer casing 3.
An outer lead-out terminal 31 is held in the outer case 3. The external lead-out terminal 31 is held in the outer casing 3 by the intermediate portion of the external lead-out terminal 31 being buried in the terminal holding convex portion 33 and the peripheral wall 32 following the base end thereof. An end portion of the external lead-out terminal 31 that extends outward from the tip of the terminal holding convex portion 33 constitutes the external terminal portion 6. An end portion of the external lead-out terminal 31 extending from the inner surface of the peripheral wall 32 constitutes an internal terminal portion 5 that is appropriately bent in the horizontal and vertical directions in order to connect to the wiring pattern 23.
In addition, a position restricting hole 34 is formed in a corner portion diagonal to the terminal holding convex portion 33 a of the peripheral wall 32.
As shown in FIG. 5, a step portion 35 into which the Cu heat radiating plate 1 is fitted is formed on the inner peripheral edge on the back surface side of the peripheral wall 32.

  Prior to the case assembling process, the outer case 3 is manufactured by filling and hardening a resin in a mold in which the external lead-out terminals 31 are installed. At this time, the resin adheres around the intermediate portion of the external lead-out terminal 31 and hardens, and the external lead-out terminal 31 is fixed to the outer case 3.

As shown in FIG. 4 (b), the lid 4 is a resin molded product, and its outer shape is a shape along the outer periphery of the outer casing 3.
As shown in FIGS. 4B and 6, a land portion 41 on which the external terminal portion 6 is mounted is formed on the lid body 4 so as to protrude. Each land portion 41 is formed with an insertion hole 42 into which the terminal holding convex portion 33 is inserted. Each land portion 41 is formed with a nut holding hole 43. A partition wall 45 is formed between one land portion 41 and a land portion 41 adjacent thereto.
Further, on the back surface of the lid body 4, a position restriction convex portion 44 that is fitted into the position restriction hole 34 is formed.

Next, the case assembly process will be described with reference to FIG.
First, as shown in FIG. 7A, the wiring board 2 on which the diode chip is mounted is joined to the Cu heat sink 1 by soldering.

Next, as shown in FIG. 7 (b), the Cu heat sink 1 is fitted into the step portion 35 of the outer case 3, and the lower end opening of the outer case 3 is fitted to the outer edge of the Cu heat sink 1. . The mating surfaces of the Cu heat sink 1 and the outer case 3 are joined using an adhesive or the like, and the outer case 3 is fixed to the Cu heat sink 1.
The internal terminal portion 5 of the external lead-out terminal 31 and the wiring pattern 23 are joined by solder.
Further, a lead member 27 connects the electrodes formed on the surface of the diode chip 26 mounted on the wiring pattern 23a and the wiring patterns 23c, 23d, and 23e. Similarly, the lead member 27 connects the electrode formed on the surface of the diode chip 26 mounted on each of the wiring patterns 23c, 23d, and 23e and the wiring pattern 23b.
Thereafter, a gel material is injected into the case to seal the electric circuit.

  Next, as shown in FIG. 7 (c), the lid 4 is put on the upper end of the outer casing 3. At this time, the terminal holding convex portion 33 is fitted into the insertion hole 42 and the position regulating convex portion 44 is fitted into the position regulating hole 34. Thereby, the outer casing 3 and the lid body 4 are positioned with an accuracy according to the molding accuracy of the outer casing 3 and the lid body 4. Further, the upper end opening of the outer casing 3 and the upper end of the peripheral wall 32 are covered with the lid body 4. FIG. 8 shows an enlarged cross-sectional view of the state where the terminal holding convex portion 33 is fitted into the insertion hole 42.

As shown in FIG. 8, the tip of the terminal holding convex portion 33 protrudes outside through the insertion hole 42. That is, the upper end of the terminal holding convex portion 33 is at a position higher than the upper surface of the land portion 41 around the insertion hole 42. With this structure, erosion due to water or the like from the exposed boundary between the external lead-out terminal 31 and the resin of the outer casing 3 is prevented.
In addition, by forming a stepped structure with the terminal holding convex portion 33 and the land portion 41, the insulation creepage distance between the adjacent external terminal portions 6 and 6 can be increased. Furthermore, the insulation creepage distance is increased by the partition wall 45. That is, if it says between the external terminal part 6c and the external terminal part 6d, as shown in FIG. 8, the insulation creepage distance traces stepwise along the outer surface of the terminal holding convex part 33c and the land part 41c. The distance detours along the outer surface of the partition wall 45 and follows a step shape along the outer surface of the adjacent land portion 41d and the terminal holding convex portion 33d.
Further, by forming a stepped structure with the terminal holding convex portion 33 and the land portion 41, the insulation creepage distance between the external terminal portion 6 and the Cu heat sink 1 can be increased. That is, as shown in FIG. 8, between the external terminal portion 6c and the Cu heat sink 1, the outer peripheral surface of the peripheral wall 32 is stepped along the outer surface of the terminal holding convex portion 33c and the land portion 41c. The distance to reach the Cu heat sink 1 exposed on the back surface.

  Finally, the external lead terminal 31 is bent at a constricted portion in the vicinity of the position restricting convex portion 44 so that the external terminal portion 6 is aligned with the upper surface of the land portion 41 to obtain the structure shown in FIGS. In FIGS. 1 (a) and 7 (c), the lid 4 is seen through.

  As described above, in the power semiconductor module of this embodiment, each component is configured and assembled. As shown in FIG. 1, the peripheral wall 32 of the outer case 3 surrounds the wiring board 2. FIG. 9A shows a schematic diagram of an arrangement example in which four power semiconductor modules according to this embodiment are arranged side by side and wiring bars are connected. FIG. 9B shows a schematic top view of a single power semiconductor module constituting a conventional three-phase bridge circuit.

As shown in FIG. 9B, in the conventional power semiconductor module, two external terminal portions of P pole and N pole are arranged in parallel with the AC input external terminal portions arranged in a line. In such a conventional external terminal arrangement, the wiring bar can be drawn only in the direction indicated by the solid arrow in the figure. If an attempt is made to pull out the wiring bar in the direction indicated by the dashed arrow in the figure, different electrodes come into contact.
On the other hand, in the power semiconductor module according to the embodiment of the present invention, as shown in FIG. 9 (a), the P-pole and N-pole are connected to the AC input external terminal portions 6c, 6d, and 6e arranged in a line. The two external terminal portions 6a and 6b are not arranged in parallel, and the AC input external terminal portions 6c, 6d, and 6e can be connected in parallel by the straight wiring bars 7, 7, and 7. The other wiring bars 8 and 9 are connected to the two external terminal portions 6a and 6b of the P pole and the N pole, respectively.

  Further, in the power semiconductor module according to the embodiment of the present invention, the anode external terminal portion 6 a and the cathode external terminal portion 6 b and all of the fixing holes 11 are viewed in a direction perpendicular to the longitudinal direction of the Cu heat sink 1. overlapping. As a result, both side portions where the fixing holes 11 are arranged are used as spaces for arranging the external terminal portions 6. Therefore, if the maximum arrangement number of the external terminal portions 6 in the width direction is the same, the width of the module is surely shortened. can do. In the power semiconductor module of the present embodiment, the maximum arrangement number of the external terminal portions 6 in the width direction is increased by one compared with the conventional three, but due to its structural advantage, the width direction ( It is possible to design to the dimension of (longitudinal direction).

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIGS. FIG. 10 is a top view (a) of a Cu heat sink according to a second embodiment of the present invention and a top view (b) of a wiring board mounted with a diode chip. FIG. 11 is a top view (a) of the outer case and a top view (b) of the lid. FIG. 12 is a cross-sectional view taken along line AA of the outer case (a), a cross-sectional view taken along the line BB (b), a cross-sectional view taken along the line CC, and a cross-sectional view taken along the line DD. FIG. 13 is a cross-sectional view taken along line AA of the lid (a) and a cross-sectional view taken along line BB (b).

The power semiconductor module of the present embodiment constitutes a tabular circuit corresponding to one arm of a three-phase bridge circuit.
The power semiconductor module of the present embodiment includes a Cu heat sink 101, a wiring board 102, an outer case 103, and a lid body 104.

  As shown in FIG. 10A, fixing holes 111 are provided at opposite corners of the Cu heat sink 101.

  As shown in FIG. 10B, the wiring board 102 is obtained by laying a thin-film wiring pattern 123 on a ceramic insulating substrate 121. Two diode chips 126 and 126 are mounted on the wiring board 102. Prior to the case assembling process, as shown in FIG. 10B, the electrodes formed on the back surface of the diode chip 126 are bonded to the wiring pattern 23 to be electrically and mechanically connected. The wiring pattern 123a corresponds to an anode. The wiring pattern 123b corresponds to a cathode. The wiring pattern 123c corresponds to an AC input electrode.

  As shown in FIG. 11 (a), the outer case 103 has a frame shape with openings at both ends, and the outer shape of the frame is almost rectangular. The opposite corner portions of the peripheral wall 132 of the outer case 103 constitute a recessed wall portion 132a. The recessed wall portion 132a is for making the fixing hole 11 of the Cu heat radiating plate 101 the outside of the case and allowing the bolt to be inserted into the fixing hole 111 from the outside.

As shown in FIG. 11A and FIG. 12, a terminal holding convex portion 133 is formed on the end surface of the peripheral wall 132 of the outer case 103.
An outer lead-out terminal 131 is held in the outer case 103. The external lead-out terminal 131 is held by the outer casing 103 by the intermediate portion of the external lead-out terminal 131 being buried in the terminal holding convex portion 133 and the peripheral wall 132 following the base end thereof. An end portion of the external lead-out terminal 131 that extends outward from the tip of the terminal holding convex portion 133 constitutes the external terminal portion 106. An end portion of the external lead-out terminal 131 extending from the inner surface of the peripheral wall 132 constitutes an internal terminal portion 105 that is appropriately bent in the horizontal and vertical directions in order to connect to the wiring pattern 123.
In addition, position restricting holes 134 are formed at diagonal corners near the end portions of the respective recessed wall portions 132a and 132a.
As shown in FIG. 12, a stepped portion 135 into which the heat radiating plate 1 is fitted is formed on the inner peripheral edge on the back surface side of the peripheral wall 132.

  Prior to the case assembling process, the outer case 103 is manufactured by filling a resin in a mold in which the external lead-out terminals 131 are installed and curing the resin. At this time, the resin adheres to and cures around the intermediate portion of the external lead-out terminal 131, and the external lead-out terminal 131 is fixed to the outer case 103.

As shown in FIG. 11 (b), the lid body 104 is a resin molded product, and the outer shape thereof is a shape along the outer periphery of the outer case 103.
As shown in FIGS. 11B and 13, the lid 104 is formed with a land portion 141 on which the external terminal portion 106 is mounted. Each land portion 141 is formed with an insertion hole 142 into which the terminal holding convex portion 133 is inserted. Each land portion 141 has a nut holding hole 143 formed therein. A partition 145 is formed between one land portion 141 and a land portion 141 adjacent thereto.
Further, on the back surface of the lid body 104, a position restriction convex part 144 that is fitted into the position restriction hole 134 is formed.

Next, the case assembly process will be described with reference to FIG.
First, as shown in FIG. 14A, the wiring board 102 on which the diode chip is mounted is joined to the Cu heat sink 101 by soldering.

Next, as shown in FIG. 14B, the Cu heat sink 101 is fitted into the step portion 135 of the outer case 103, and the lower end opening of the outer case 103 is fitted to the outer edge of the Cu heat sink 101. . The mating surfaces of the Cu heat sink 101 and the outer case 103 are joined using an adhesive or the like, and the outer case 103 is fixed to the Cu heat sink 101.
The internal terminal portion 105 of the external lead-out terminal 131 and the wiring pattern 123 are joined by solder.
Further, an electrode formed on the surface of the diode chip 126 mounted on the wiring pattern 123a and the wiring pattern 123c are connected by a lead member (not shown). Similarly, an electrode formed on the surface of the diode chip 126 mounted on the wiring pattern 123c and the wiring pattern 123b are connected by a lead member (not shown).
Thereafter, a gel material is injected into the case to seal the electric circuit.

  Next, as shown in FIG. 14 (c), the lid 104 is placed on the upper end of the outer case 103. At this time, the terminal holding convex portion 133 is fitted into the insertion hole 142 and the position regulating convex portion 144 is fitted into the position regulating hole 134. Accordingly, the outer case 103 and the lid body 104 are positioned with an accuracy according to the molding accuracy of the outer case 103 and the lid body 104. Further, the upper end opening of the outer casing 103 and the upper end of the peripheral wall 132 are covered with the lid body 104.

Similar to the first embodiment, the tip of the terminal holding convex portion 133 protrudes outside through the insertion hole 142. That is, the upper end of the terminal holding convex portion 133 is at a position higher than the upper surface of the land portion 141 around the insertion hole 142. With this structure, erosion due to water or the like from the exposed boundary between the external lead-out terminal 131 and the resin of the outer casing 103 is prevented.
In addition, by forming a stepped structure with the terminal holding convex portion 133 and the land portion 141, the insulation creepage distance between the adjacent external terminal portions 106a and 106b can be increased. Further, the insulation creepage distance is increased by the partition 145. That is, the insulation creepage distance is stepped along the outer surface of the terminal holding convex portion 133a and the land portion 41a, detoured along the outer surface of the partition wall 145, and between the adjacent land portion 141b and the terminal holding convex portion 133b. It is the distance traced stepwise along the outer surface.
In addition, by forming a stepped structure with the terminal holding convex portion 133 and the land portion 141, the insulation creepage distance between the external terminal portion 106 and the Cu heat sink 101 can be increased. That is, it is the distance to reach the outer peripheral surface of the peripheral wall 132 stepwise along the outer surface of the terminal holding convex portion 133 and the land portion 141c and reach the Cu heat sink 101 exposed on the rear surface.

  Finally, the external lead terminal 131 is bent at the constricted portion near the position restricting convex portion 144, and the external terminal portion 106 is completed according to the upper surface of the land portion 141. In FIG. 14C, the lid 104 is seen through.

  As described above, in the power semiconductor module of this embodiment, each component is configured and assembled. As shown in FIG. 14B, the peripheral wall 132 of the outer case 103 surrounds the wiring board 102.

  In the power semiconductor module of the embodiment of the present invention, the cathode external terminal portion 106 b and about half of the fixing hole 111 overlap each other when viewed in the direction perpendicular to the longitudinal direction of the Cu heat sink 101. Further, the AC input external terminal portion 106 c and about half of the fixing hole 111 overlap each other when viewed in the direction perpendicular to the longitudinal direction of the Cu heat sink 101. As a result, both side portions where the fixing holes 111 are arranged are used as spaces for arranging the external terminal portions 106. Therefore, if the maximum arrangement number of the external terminal portions 106 in the width direction is the same, the width of the module is surely shortened. can do. In the power semiconductor module of this embodiment, the maximum number of external terminal portions 106 in the width direction is the same as that of the conventional three, but due to its structural advantage, it is designed to have a width (longitudinal) dimension smaller than that of the conventional product. Is possible.

  In order to further reduce the dimensions, as shown in FIG. 15, the cathode external terminal portion 106b and almost all of the fixing hole 111 are overlapped when viewed in the direction perpendicular to the longitudinal direction of the Cu heat sink 101. Also good. Similarly, the AC input external terminal portion 106 c and substantially all of the fixing hole 111 may be overlapped when viewed in the direction perpendicular to the longitudinal direction of the Cu heat sink 101.

It is the top view (a) and BB sectional drawing (b) which show the power semiconductor module of 1st Embodiment of this invention. It is AA sectional drawing of the power semiconductor module of 1st Embodiment of this invention. It is the upper side figure (a) of Cu heat sink which concerns on 1st Embodiment of this invention, and the upper side figure (b) of the wiring board by which the diode chip mounting was carried out. It is the top view (a) of the surrounding case which concerns on 1st Embodiment of this invention, and the top view (b) of a cover body. AA line sectional view (a), BB line sectional view (b), CC line sectional view (c) and DD line sectional view (d) of the enclosing case according to the first embodiment of the present invention ). It is AA sectional view (a) and BB sectional view (b) of the lid concerning a 1st embodiment of the present invention. It is a top view which shows the case assembly process which concerns on 1st Embodiment of this invention. It is an expanded sectional view of the enclosing case and lid which concern on 1st Embodiment of this invention. (A) is a schematic diagram of an arrangement example in which four power semiconductor modules according to the first embodiment of the present invention are arranged side by side and wiring bars are connected. (B) is a schematic top view of a single power semiconductor module constituting a conventional three-phase bridge circuit. It is the upper side figure (a) of Cu heat sink which concerns on 2nd Embodiment of this invention, and the upper side figure (b) of the wiring board by which the diode chip mounting was carried out. It is the upper side figure (a) of the enclosing case which concerns on 2nd Embodiment of this invention, and the upper side figure (b) of a cover body. AA line sectional view (a), BB line sectional view (b), CC line sectional view (c) and DD line sectional view (d) of the enclosing case according to the second embodiment of the present invention ). It is AA sectional view (a) and BB sectional drawing (b) of the cover which concerns on 2nd Embodiment of this invention. It is a top view which shows the case assembly process which concerns on 2nd Embodiment of this invention. It is a top view of the power semiconductor module which shows the modification concerning 2nd Embodiment of this invention. FIG. 2 is a circuit diagram of a three-phase bridge circuit (a) and an external view (a top view (b) and a front view (c)) of a conventional single power semiconductor module packaged with a single three-phase bridge circuit. FIG. 2 is a circuit diagram (a1) and (a2) of a tabular circuit, and an external view (a top view (b) and a front view (c)) of a conventional single power semiconductor module in which a single tabular circuit is packaged. It is an external view (top view (a), front view (b)) of another conventional power semiconductor module packaged with a tabular circuit.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Cu heat sink 2 Wiring board 3 Outer case 4 Lid 5 Internal terminal part 6a Anode external terminal part 6b Cathode external terminal part 6c, 6d, 6e AC input external terminal part 11 Fixing hole 21 Ceramic insulating board 23 Wiring pattern 26 Diode chip 31 External lead-out terminal 32 Peripheral wall 33 Terminal holding convex part 34 Position restricting hole 41 Land part 42 Insertion hole 43 Nut holding hole 44 Position restricting convex part 45 Partition 101 Heat sink 102 Wiring board 103 Outer case 104 Lid 105 Internal terminal Part 106a anode external terminal part 106b cathode external terminal part 106c AC input external terminal part 111 fixing hole 123 wiring pattern 126 diode chip 131 external lead-out terminal 132 peripheral wall 133 terminal holding convex part 134 position regulating hole 141 land part 142 insertion hole 144 position Regulating convex part 145

Claims (2)

A heat sink,
A thin-film wiring pattern laid on the heat sink via an insulating material;
A semiconductor chip mounted on the wiring pattern, and an outer casing made of resin in a frame shape of both ends having a peripheral wall surrounding the wiring pattern forming region by fitting an opening at one end to the outer edge of the heat sink ,
An intermediate part is embedded and held in the outer case, one end constitutes an internal terminal part connected to the wiring pattern, and the other end constitutes an external terminal part,
A resin lid covering the opening at the other end of the outer case,
The outer case has a convex portion on the end surface on the other end side of the peripheral wall,
An end portion of the external lead terminal with the external terminal portion extends to the outside from the tip of the convex portion,
The lid has an insertion hole that fits into the convex portion,
The tip of the convex part protrudes outside from the insertion hole ,
A three-phase bridge circuit in which the semiconductor chip is a diode chip is configured, and the external terminal portion is composed of five terminals including one anode external terminal portion, one cathode external terminal portion, and three AC input external terminal portions. And
Of the five terminals, four terminals including the three AC input external terminal portions are unevenly distributed on one side in the longitudinal direction and arranged in one row in the longitudinal direction,
The three AC input external terminal portions are continuously arranged without passing through other external terminal portions,
A power semiconductor module in which the anode external terminal portion and the cathode external terminal portion are arranged in a direction perpendicular to the longitudinal direction at one end portion in the longitudinal direction . The lid body is formed with a raised land portion on which each external terminal portion is mounted,
Each land part is formed with an insertion hole into which the convex part is inserted ,
The power semiconductor module according to claim 1, wherein a partition wall is formed between one land portion of the lid and the land portion adjacent to the land portion in the longitudinal direction.

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