JP4634076B2 - Charged particle beam exposure apparatus and device manufacturing method - Google Patents

Description

  The present invention relates to a charged particle beam exposure apparatus and an exposure method such as an electron beam exposure apparatus and an ion beam exposure apparatus mainly used for exposure of a semiconductor integrated circuit or the like. In particular, the present invention is suitable for a charged particle beam exposure apparatus that performs pattern exposure (pattern drawing) using a plurality of charged particle beams and an exposure method thereof.

A conventional charged particle beam exposure apparatus for forming a pattern on a sample as an exposure target accelerates, shapes and reduces charged particles emitted from a charged particle source, and irradiates the sample with a desired pattern. Is formed on the sample. In particular, when the throughput of the exposure apparatus is required, there are a plurality of beams, and there is a method for drawing a plurality of patterns at the same time.
Japanese Patent Laid-Open No. 9-245708

  However, while the charged particle beam exposure apparatus according to the conventional example can achieve high throughput, if one or more of a plurality of beams have a problem, redrawing must be performed in order to complement the defective beam. This leads to a significant decrease in throughput.

The present invention relates to a charged particle beam exposure apparatus capable of performing exposure without reducing redrawing even when a defect occurs in a part of a plurality of beams, and device manufacture using the same It aims to provide a method .

A first aspect of the present invention relates to a charged particle beam exposure apparatus that draws a pattern on an exposure target. The charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure target with a beam of m rows and n columns of the beams, and irradiating the exposure target with the x and y columns of the m rows and n columns of beams. If not, the beam of the (x-1) th row and the yth column draws a pattern to be originally drawn by the beam of the (x-1) th row and the yth column, and the (x + 1) th row and the yth column. The beam of the x-th row and the y-th column draws a pattern to be originally drawn by the beam of the eye, and the beam of the (x + 1) -th row and the y-th column is originally drawn by the beam of the (x + 2) -th row and the y-th column. It is characterized by drawing a pattern to be drawn.
According to a second aspect of the present invention, there is provided a charged particle beam exposure apparatus for drawing a pattern on an exposure target, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure object with a beam of m rows and n columns of the beams, and x of the beams of m rows and n columns. ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated onto the exposure target, (x ₁ -1) x by the beam in the row and column y ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ -2) The above-mentioned (x ₁ -1) A pattern to be originally drawn by the beam in the row and the y-th column is drawn, and (x ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The (x ₂ +1) The beam in the row and the y-th column draws a pattern to be originally drawn.
According to a third aspect of the present invention, there is provided a charged particle beam exposure apparatus that draws a pattern on an exposure target, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure object with a beam of m rows and n columns of the beams, and x of the beams of m rows and n columns. ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated onto the exposure target, (x ₁ -1) the beam in the row and column (y-1), x ₁ The beam in the row and column (y-1), (x ₁ +1) beam in the (y-1) th row and (y-1) th column, (x ₁ -1) beam in row and column (y + 1), x ₁ The beam in the row and the (y + 1) th column, or (x ₁ +1) row and (y + 1) column beam ₁ The beam in the row and column y draws the pattern that should be drawn,
  (X ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The above (x ₂ +1) The beam in the row and the y-th column draws a pattern to be originally drawn.
According to a fourth aspect of the present invention, there is provided a charged particle beam exposure apparatus for drawing a pattern on an exposure object, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure object with a beam of m rows and n columns of the beams, and x of the beams of m rows and n columns. ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated on the exposure target, x ₁ The x-th beam by the beam in the row and the (y-1) th column. ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ +1) row and (y−1) column beam x ₁ The beam in the row and the (y-1) th column draws a pattern to be drawn, or x ₁ X by the beam in the row and column (y + 1) ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ +1) row and (y + 1) column beam ₁ The beam in the row and the (y + 1) th column draws the pattern that should be drawn, and (x ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and the y-th column draws a pattern to be originally drawn.
According to a fifth aspect of the present invention, there is provided a charged particle beam exposure apparatus for drawing a pattern on an exposure target, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure object with a beam of m rows and n columns of the beams, and x of the beams of m rows and n columns. ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated on the exposure target, x ₁ The x-th beam by the beam in the row and the (y-1) th column. ₁ The beam in the row and column y draws the pattern to be drawn, and x ₁ The x-th beam by the beam in the row and column (y-2). ₁ The beam in the row and the (y-1) th column draws a pattern to be drawn, or x ₁ X by the beam in the row and column (y + 1) ₁ The beam in the row and column y draws the pattern to be drawn, and x ₁ X by the beam in the row and column (y + 2) ₁ The beam in the row and the (y + 1) th column draws the pattern that should be drawn, and (x ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The above (x ₂ +1) The beam in the row and the y-th column draws a pattern to be originally drawn.
According to a sixth aspect of the present invention, there is provided a charged particle beam exposure apparatus for drawing a pattern on an exposure target, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure target with a beam of m rows and n columns of the beams, and the beam of the x and y columns and the (x + 1) row of the m rows and n columns of beams When the beam in the y-th column is not irradiated onto the exposure target, the beam in the (x-1) th row and the (y-1) th column, or the (x-1) th row and the (y + 1) th column. The beam in the x-th row and the y-th column draws a pattern to be originally drawn by the beam, and the beam in the (x + 1) -th row and y-th column is originally drawn by the beam in the (x-1) -th row and the y-th column. A power pattern is drawn.
According to a seventh aspect of the present invention, there is provided a charged particle beam exposure apparatus for drawing a pattern on an exposure target, wherein the charged particle beam exposure apparatus emits a plurality of beams arranged in an array; Means for irradiating the exposure object with a beam of m rows and n columns of the beams, and x of the beams of m rows and n columns. ₁ Beam in row and column y, (x ₁ +1) beam and x in the row and column y ₂ When the beam in the row and the y-th column is not irradiated onto the exposure target, (x ₁ -2) x by the beam in the row and column y ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ -1) The above-mentioned (x ₁ The beam in the (+1) th row and the yth column draws a pattern to be originally drawn, and (x ₂ +1 row) and the y-th column beam ₂ The beam in the row and the y-th column draws a pattern to be originally drawn.
An eighth aspect of the present invention relates to a device manufacturing method, and includes a step of exposing an exposure target using the above charged particle beam exposure apparatus, and a step of developing the exposed exposure target. To do.

As described above, according to the present invention, a charged particle beam exposure apparatus and a device manufacturing method using the same that can compensate for defects in the beam without lowering throughput by using an alternative beam. Can be provided.

  In the embodiment of the present invention, an example of an electron beam exposure apparatus using an electron beam as an example of a charged particle beam is shown. The present invention is not limited to an electron beam, and can be similarly applied to an exposure apparatus using a charged particle beam such as an ion beam.

(Description of components of electron beam exposure apparatus)
Example 1 of the present invention will be described below. FIG. 1 is a schematic view of a main part of an electron beam exposure apparatus according to an embodiment of the present invention.

In FIG. 1, an electron beam emitted radially from an electron source 1 as a charged particle beam source is shaped by a charged particle beam lens 2 and then substantially perpendicularly incident on an aperture array 3. The aperture array 3 as an aperture array has 50-micron apertures arranged in 12 rows and 12 columns as an example of m rows and n + 1 columns or more, and forms a divided multi-electron beam 16. The formed multi-electron beam 16 is converged by the lens array 4. The lens array 4 is an arrayed electrostatic lens group of 12 rows and 12 columns.

Further, the beam is finely adjusted independently using the multi deflectors 5 and 6 and then passes through the blanking array 7. The blanking array 7 can deflect the beam independently, and the deflected beam is shielded by the limiting diaphragm 12. The blanking array 7 is a group of 10-by-10 array deflectors. Multiple electron beam 16 passing through the blanking array 7 is formed by the lens 8, 9, 10, 11 on the wafer 14 is exposed target by the charged particle beam deflector 13, that is transferred to a desired position on the exposure target The

  The aperture array 3, the lens array 4, the multi deflectors 5 and 6, and the blanking array 7 are called a multi-source module 100. The aperture diameter of the aperture array 3 is 50 microns, the aperture diameter of the lens array 4 is 80 microns, and the diameters of the multi deflectors 5 and 6 and the blanking array 7 are 50 microns. According to the above configuration, an array of 10 rows and 10 columns can be exposed on the wafer 14 at a time.

(Explanation of remedy when a given beam failure occurs)
However, if one lens out of the lens group of the lens array 4 becomes defective due to a manufacturing error, dust adhesion, etc., only 99 lenses out of 10 × 10 or 100 lenses are used. I can't. This causes a defective pattern for one lens that has become defective. In addition, in order to avoid a pattern defect, if one of normal 99 lenses is used to draw a pattern that should be originally drawn for a defective lens, a reduction in throughput is inevitable. Therefore, in this embodiment, a desired pattern can be drawn without causing a decrease in throughput by using the following method.

An enlarged view of the multi-source module 100 according to the present embodiment is shown in FIG. FIG. 2A shows a case where all the lenses are operating normally, and FIG. 2B shows an aperture as an example in which the beam of x rows and y columns as 18 beams cannot be transferred onto the exposure target. The case where the defect 17 occurs is shown. When the aperture defect 17 occurs, the beam 18 that should originally be used for drawing is blocked, and normal drawing cannot be performed. Therefore, in this embodiment, the alternative beam group 19 outside the aperture defect 17 is shifted inward by one aperture using the multi deflectors 5 and 6. By performing the above adjustment, it is possible to perform the same drawing as normal drawing without reducing the throughput. That is, the beam of x + 1 rows and y columns which is the alternative beam 19 transfers the pattern to be originally transferred of the beam of x rows and y columns which is the 18 beams, and the beam of x + 2 rows and y columns which is the alternative beam 19 is x + 1. A pattern to be originally transferred of the beam in the row y column is transferred.

  In the first embodiment of the present invention, the alternative beam adjustment method when a defect occurs in the lens array 4 has been described. In the second embodiment, an example where a defect occurs in the aperture array 3 will be described. As shown in FIG. 2C, similarly to the first embodiment, the present embodiment also reduces the throughput by shifting the beam outside the defective aperture 17 to the inside by one aperture using the multi deflectors 5 and 6. The drawing can be performed in exactly the same way as normal drawing.

  In this embodiment, the case where the defective opening 17 is generated in the aperture array 3 has been described. In this case, as shown in FIG. 2D, the multi deflectors 20 and 21 are disposed between the aperture array 3 and the lens array 4. In the same manner as in the above embodiment, the normal drawing can be performed without reducing the throughput by shifting the beam outside the defective aperture 17 to the inside of one aperture of the deflector using the multi deflectors 20 and 21. Exactly the same drawing can be performed.

Although the case where there is one defect is shown in the above embodiment, Embodiment 3 in the case where there are a plurality of defects will be described below. FIGS. 3A to 3C are plan views of the beam array written from the top, and show alternative beam creation methods when a defective beam is generated. When a plurality of defects are not present in one row, the technique used in the first and second embodiments is used as shown in FIG. An alternative beam region is provided outside the beam region 22 used for normal drawing, and the alternative beam is shifted by one beam as indicated by an arrow using a multi-deflector which is a beam deflector according to the defect beam. Can be created.

  When two or more defects occur in one row or one column, as shown in FIG. 3 (b), use a multi-deflector to shift the beam groups in the X +, X-, Y +, Y- directions, respectively. Therefore, even if there are many defects in one row or one column, it can be dealt with by an alternative beam.

    In addition, when defects occur in a cluster shape, as shown in FIG. 3C, the deflection sensitivity of the multi-deflector is improved, and a beam separated by two apertures and a beam separated by one aperture obliquely in the XY direction. It can be accommodated by using an alternative beam. Further, as shown in FIG. 3D, it is also possible to prepare an alternative beam array for two openings outside the beam region 22 used for normal drawing in advance and shift the beams for the two openings. Similarly, it is possible to deal with a larger number of defects by increasing the number of alternative beams and improving the deflection sensitivity.

  In the above embodiment, an example in which the beam is lost due to some defect has been described. In the fourth embodiment, a case in which the beam control becomes impossible will be described. FIG. 4 shows an example of beam control in the multi-source module 100 according to this embodiment.

  FIG. 4A shows a case where one lens 23 in the lens array 4 is unable to converge the beam for some reason. In this case, since only the beam passing through the defective lens 23 cannot be sufficiently converged, the pattern drawn by the beam becomes a defect.

  Therefore, in this embodiment, as shown in FIG. 4B, the beam passing through the defective lens is deflected by using the multi-deflector 5 and shielded in the middle of the beam path, and the beam 19 in the same or the same column is opened by one aperture. An alternative beam is created by shifting the distance. With the above adjustment, it is possible to perform the same drawing as when there is no defective lens.

  In this embodiment, the defect beam is evacuated using the multi-deflector 5. However, the same effect can be obtained even if the multi-deflector 6 and the blanking array 7 are evacuated.

  In the above embodiment, the alternative beam creation method when a defect occurs in the aperture array 3 or the lens array 4 has been described. In the fifth embodiment, an alternative beam creation method when a defect occurs in the blanking array 7 is described. To do. FIG. 5 shows a multi-source module according to this embodiment. In addition to the above-described embodiment, multi-deflectors 24 and 25 are additionally provided on the exposure target side with respect to the blanking array 7.

  FIG. 5A shows a case where an opening defect 17 occurs in one opening of the blanking array 7. In this case, as in the above-described embodiment, normal drawing can be performed by creating an alternative beam by shifting the beam 19 in the same row or in the same column by one opening using the multi deflectors 24 and 25.

FIG. 5B shows a case where the blanker 26 of one opening of the blanking array 7 cannot be turned on / off. Since the defect blanker 26 cannot be turned on and off, the beam always reaches the wafer and generates a defective drawing pattern. Therefore, in this embodiment, the beam 18 is deflected by using the multi-deflector 24, shielded in the middle, and the beam 19 in the same row or the same column is shifted by one opening by using the multi-deflectors 24 and 25. An alternative beam can be created to perform normal drawing.

  The beam 18 is shielded by using a part of the multi-deflector 25, but the same effect can be obtained even if the beam 18 is shielded by the limiting diaphragm 12 or the like. In this embodiment, the defect beam is evacuated using the multi-deflector 24. However, the same effect can be obtained even if the multi-deflector 25 is used to evacuate.

  Next, a semiconductor device manufacturing process using the exposure apparatus according to any one of Examples 1 to 5 will be described. FIG. 6 is a flowchart showing the overall manufacturing process of the semiconductor device. In step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.

  On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, in which an actual circuit is formed on the wafer using lithography using the exposure apparatus and wafer to which the exposure control data has been input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

  The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer The resist processing step, the exposure step for printing and exposing the circuit pattern onto the wafer after the resist processing step by the above-described exposure apparatus, the development step for developing the wafer exposed in the exposure step, and the etching for removing portions other than the resist image developed in the development step Step, resist stripping step to remove resist that is no longer needed after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a figure which shows the principal part outline of the electron beam exposure apparatus which concerns on the Example of this invention in a partial cross section. It is sectional drawing which shows the multi source module for demonstrating Example 1 of this invention. It is sectional drawing which shows the generation | occurrence | production of the defect of the multi source module, and the production method of an alternative beam for demonstrating Example 1 of this invention. It is sectional drawing which shows the generation | occurrence | production of the defect of the multi source module, and the production method of an alternative beam for demonstrating Example 2 of this invention. It is sectional drawing which shows the generation | occurrence | production of the defect of the multi source module, and the production method of an alternative beam for demonstrating Example 2 of this invention. It is the top view which expressed the beam array for describing Example 3 of this invention from the top. It is the top view which expressed the beam array for describing Example 3 of this invention from the top. It is the top view which expressed the beam array for describing Example 3 of this invention from the top. It is the top view which expressed the beam array for describing Example 3 of this invention from the top. It is sectional drawing which shows the multi source module for demonstrating Example 4 of this invention. It is sectional drawing which shows the multisource module for demonstrating Example 4 of this invention, generation | occurrence | production of a defective lens, and the production method of an alternative beam. It is sectional drawing which shows the multi-source module for demonstrating Example 5 of this invention, a defect, generation | occurrence | production of a defect blanker, and the production method of an alternative beam. It is sectional drawing which shows the multi source module for demonstrating Example 5 of this invention, a defect, generation | occurrence | production of a defect blanker, and the production method of an alternative beam. It is a figure which shows the flow of the whole manufacturing process of a semiconductor device.

Explanation of symbols

  1: Electron source, 2: Lens, 3: Aperture array, 4: Lens array, 5, 6: Multi deflector, 7: Blanking array, 8, 9, 10, 11: Lens, 12: Limiting aperture, 13: Deflector, 14: wafer, 15: backscattered electron detector, 16: multi-electron beam, 17: defective aperture due to defect, 18: defective beam, 19: alternative beam, 20, 21: multi-deflector, 22: no defect Beam region used in case, 23: defect lens, 24, 25: multi deflector, 26: defect blanker, 100: multi source module.

Claims (9)

  A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure target with m rows and n columns of the plurality of beams,
  When the x-th and y-th beams among the m-row and n-column beams are not irradiated on the exposure target,
  The beam of the (x-1) th row and the yth column draws a pattern to be originally drawn by the beam of the (x-1) th row and the yth column,
  The beam of the xth row and the yth column draws a pattern to be originally drawn by the beam of the (x + 1) th row and the yth column, and the (x + 1) th row is drawn by the beam of the (x + 2) th row and the yth column. A charged particle beam exposure apparatus, wherein the beam in the y-th column draws a pattern to be originally drawn.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure target with m rows and n columns of the plurality of beams,
  X out of the beam of m rows and n columns ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated onto the exposure target,
  (X ₁ -1) x by the beam in the row and column y ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ -2) The above-mentioned (x ₁ -1) The beam in the row and the y-th column draws a pattern to be originally drawn,
  (X ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The (x ₂ +1) A charged particle beam exposure apparatus in which a beam in a row and a y-th column draws a pattern to be originally drawn.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure target with m rows and n columns of the plurality of beams,
  X out of the beam of m rows and n columns ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated onto the exposure target,
  (X ₁ -1) the beam in the row and column (y-1), x ₁ The beam in the row and column (y-1), (x ₁ +1) beam in the (y-1) th row and (y-1) th column, (x ₁ -1) beam in row and column (y + 1), x ₁ The beam in the row and the (y + 1) th column, or (x ₁ +1) row and (y + 1) column beam ₁ The beam in the row and column y draws the pattern that should be drawn,
  (X ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The above (x ₂ +1) A charged particle beam exposure apparatus characterized in that a beam in a row and a y-th column draws a pattern to be originally drawn.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure object with a beam of m rows and n columns of the plurality of beams,
  X of the m rows and n columns of beams ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated on the exposure target,
  x ₁ The x-th beam by the beam in the row and the (y-1) th column. ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ +1) row and (y−1) column beam x ₁ The beam in the row and the (y-1) th column draws a pattern that should be drawn,
  x ₁ X by the beam in the row and column (y + 1) ₁ The beam in the row and column y draws the pattern that should be drawn, and (x ₁ +1) row and (y + 1) column beam ₁ The beam in the row and the (y + 1) th column draws the pattern that should be drawn,
  (X ₂ +1) Said x by the beam in the row and column y ₂ A charged particle beam exposure apparatus, wherein a beam to be originally drawn is drawn by a beam in a row and a y-th column.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure object with a beam of m rows and n columns of the plurality of beams,
  X of the m rows and n columns of beams ₁ Row and column y beam and x ₂ When the beam in the row and the y-th column is not irradiated on the exposure target,
  x ₁ The x-th beam by the beam in the row and the (y-1) th column. ₁ The beam in the row and column y draws the pattern to be drawn, and x ₁ The x-th beam by the beam in the row and column (y-2). ₁ The beam in the row and the (y-1) th column draws a pattern that should be drawn,
  x ₁ X by the beam in the row and column (y + 1) ₁ The beam in the row and column y draws the pattern to be drawn, and x ₁ X by the beam in the row and column (y + 2) ₁ The beam in the row and the (y + 1) th column draws the pattern that should be drawn,
  (X ₂ +1) Said x by the beam in the row and column y ₂ The beam in the row and column y draws the pattern that should be drawn, and (x ₂ +2) The above (x ₂ +1) A charged particle beam exposure apparatus in which a beam in a row and a y-th column draws a pattern to be originally drawn.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure object with a beam of m rows and n columns of the plurality of beams,
  When the beam of the x-th row and the y-th column and the beam of the (x + 1) -th row and the y-th column among the beams of the m-th row and the n-th column are not irradiated onto the exposure target,
  The beam in the xth row and the yth column is originally drawn by the beam in the (x-1) th row and the (y-1) th column, or the beam in the (x-1) th row and the (y + 1) th column. Draw the power pattern,
  (X-1) A charged particle beam exposure apparatus, wherein the beam of (x + 1) row and y column draws a pattern to be originally drawn by the beam of row and y column.   A charged particle beam exposure apparatus for drawing a pattern on an exposure target,
  Means for emitting a plurality of beams arranged in an array;
  Means for irradiating the exposure object with a beam of m rows and n columns of the plurality of beams,
  X of the m rows and n columns of beams ₁ Beam in row and column y, (x ₁ +1) beam and x in the row and column y ₂ When the beam in the row and the y-th column is not irradiated on the exposure target,
  (X ₁ -2) x by the beam in the row and column y ₁ The beam in the row and column y draws the pattern that should be drawn,
  (X ₁ -1) The above-mentioned (x ₁ +1) The beam in the row and y column draws the pattern that should be drawn,
  (X ₂ +1 row) and the y-th column beam ₂ A charged particle beam exposure apparatus, wherein a beam to be originally drawn is drawn by a beam in a row and a y-th column.   The means for emitting has an aperture array for dividing a beam from a charged particle beam source into the plurality of beams,
  The means for irradiating includes a lens array that individually converges the plurality of divided beams, a multi-deflector that individually deflects the plurality of beams, and the m rows and n columns of the plurality of beams. 8. A shielding part that shields a beam other than the above, a lens that shapes the beam of m rows and n columns, and a deflector that deflects the beam of m rows and n columns. The charged particle beam exposure apparatus according to one. Device fabrication comprising a step of exposing the exposure target using a charged particle beam exposure apparatus according to any one of claims 1 to 8, a step of developing the exposed the exposure target, the Method.

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