JP4635501B2 - Laser diode package - Google Patents

Description

  The present invention relates to a thin semiconductor laser package used for notebook PCs, small information equipment systems, and the like.

  Semiconductor laser packages used for notebook PCs, small information equipment systems, and the like are required to be thin from the viewpoint of space saving. Here, the thinning requirement is a requirement that a dimension in one uniaxial direction of a surface (width direction or thickness direction) perpendicular to the optical axis direction of the semiconductor laser (LD) is small. In order to cope with such a demand, an I-cut package is used. A semiconductor laser package employs a hermetically sealed package in order to increase reliability. Such hermetic sealing is performed by welding a cap to a stem, and this type of package is most mass-productive and has excellent airtightness.

  FIG. 7 is a view showing an example of such a semiconductor laser package described in Patent Document 1. FIG. 7A is a plan view showing a state of semiconductor laser mounting, and FIG. 7B is a schematic cross-sectional view. In FIG. 7, 2 is a stem, 3 is a cap, 4 is a semiconductor laser, 6 and 7 are leads, a block of 10 stems, 13 is a cover glass attached to the cap 3, and 14 is a glass for lead sealing. Reference numeral 30 denotes a wire bonding capillary.

  FIG. 7B shows a state after the semiconductor laser 4 is mounted on the stem block 10. When the semiconductor laser 4 is mounted on the stem block 10, the stem 2 is inverted by 90 degrees from the state shown in FIG. The semiconductor laser 4 is arranged and mounted on the stem block 10 from the direction of the arrow P through the interval Wx between the pair of positive and negative leads 6 and 7. FIG. 8 is an explanatory view showing an example of a manufacturing process of the semiconductor laser package shown in FIG. 8A is an initial state of the stem 2, FIG. 8B is a state in which the stem 2 is rotated 90 degrees, and the LD 4 is die-bonded to the block 10 of the stem by the collet 31, and FIG. The state where the wire 11 is bonded to the electrode of the LD 4 and the lead 7 by wire bonding is shown.

  With the miniaturization of the semiconductor laser package, the interval Wx between the pair of positive and negative leads 6 and 7 has been set narrow. For this reason, it becomes difficult to insert the semiconductor laser 4 into the stem block 10 from the interval Wx, and the semiconductor laser 4 cannot be mounted on the stem block 10. FIG. 9 is an explanatory diagram showing an example of dealing with such a problem. The same portions as those in FIG. 7 are denoted by the same reference numerals, and description thereof is omitted to avoid duplication.

  In the example of FIG. 9, when the LD 4 is mounted on the stem block 10, the height of the stem block 10 a is increased so that the LD 4 does not hit the pair of positive and negative leads 6, 7. The height of the stem block is normally 1.4 mm, but in the example of FIG. As shown in FIG. 8, when the height of the stem block 10 is increased, the heat dissipation path of the LD 4 is lengthened, so that the thermal resistance is increased (becomes worse).

  In addition, if the height of the leads 6 and 7 is too short, it becomes impossible to mount a wire, so that generally 0.6 mm or more is required. In a normal semiconductor laser package, the block height is 1.4 mm and the thermal resistance is 25 ° C./W. In a small semiconductor laser package, the block height is 2 mm as described above, and the thermal resistance is 30 ° C./W. Japanese Patent Application Laid-Open No. H10-228561 describes a planar mounting type semiconductor laser package using a mirror that raises the direction of light emitted from the LD using a mirror.

  FIG. 10 is an explanatory view showing an example of a semiconductor laser package 21 employing a hermetically sealed package, and FIG. 11 is an explanatory view showing a cross-sectional shape of the configuration of FIG. 10 and 11, 22 is a stem, 23 is a cap, 24 is a stem block, 25 is a flange of the stem, 26 is a cover glass attached to the cap 23, 27 is an LD, 28 is a lead, and 29 is a wire. is there. The optical axis is assumed to be in the L direction. The cap 23 is fixed to the flange 25 of the stem by welding. In this case, the thinning of the semiconductor laser package 21 requires a small dimension in the X direction (dimension in the width direction) that is perpendicular to the optical axis direction.

  FIG. 11A shows the dimensions A to F between the respective parts of the semiconductor laser package. In the semiconductor laser package, dimensions A to F between members in the X-axis direction required to be thin are as shown in Table 1 (unit: mm). Here, A is the dimension between the outer periphery of the flange 25 of the stem and the end of the flange 23a of the cap 23 (0.15), and B is the dimension between the flange 23a of the cap 23 and the outer periphery of the cylindrical portion of the cap 23. (0.3), C is the dimension (0.15) between the outer periphery of the cylindrical portion of the cap 23 and the inner periphery of the cylindrical portion of the cap 23, and D is the block of the inner periphery of the cylindrical portion of the cap 23 and the stem 24 is the dimension between the outside of the stem 24 (0.15), E is the dimension between the outside and the inside of the stem block 24 (0.6), and F is the thickness dimension of the LD 27 (0.15). .

  As shown in Table 1, in the semiconductor laser package 21, the dimensions of A to F are subject to certain restrictions to be reduced due to factors such as having to improve heat dissipation characteristics. 1.5mm. Therefore, the size in the X direction of the semiconductor laser package shown in FIGS. 10 and 11 is limited to 3 mm, which is twice that size, and cannot be smaller than that.

  In FIG. 11A, the major axis direction of the emitted light 27x of the LD 27 is the same as the minor axis direction (width direction of the cover glass 26) of the effective diameter 23x of the cap 23 as shown in FIG. It is formed. Lb and Lc in FIG. 11A indicate outer edge portions where the light emitted from the LD 27 is reflected by the cap 23 and scattered as stray light in the package.

  As shown in FIG. 11B, the major axis direction of the emitted light 27x of the LD 27 is formed in the minor axis direction Q of the effective diameter 23x of the cap 23, and the minor axis of the effective diameter 23x of the cap 23 is formed. The length Wa between the direction edge and the edge in the long axis direction of the outgoing light 27x is a small value. Here, the reflected light Lb, Lc as shown in FIG. 11A causes a phenomenon called optical vignetting, which has an influence such as optical interference on the outgoing light 27x. Specifically, the reflected light Lb, Lc returns to the LD 27 to increase the noise of the LD, or stray light is mixed in the laser light to be used, thereby degrading the optical characteristics of the semiconductor laser.

  For this reason, it is desirable that the length Wa between the edge in the short axis direction of the effective diameter 23x of the cap 23 and the edge of the emitted light 27x is as large as possible. That is, since the reflected light of Lb and Lc is reflected by the edge of the cap 23 in the short axis Q direction of the effective diameter 23x, the edge of the emitted light 27x is as much as possible the axis of the effective diameter 23x in the major axis P direction. The closer to can avoid the effect of light vignetting.

  As described above, in the semiconductor laser package, (a) low thermal resistance, (b) cost reduction of the package, that is, mirrorless package, (c) downsizing, (d) hermetic sealing, (e) optical vignetting Prevention of occurrence is required.

JP 2004-31900 A JP 2002-32918 A

  With the recent miniaturization of information equipment such as notebook PCs, there has been a demand for further thinning of semiconductor laser packages. As a specific example of the dimension, a dimension of about 2 mm in the width direction is required. For this reason, there is a problem that the I-cut package as disclosed in Patent Document 1 in which the dimension in the width direction is at least 3 mm cannot be used.

  As shown in FIG. 8, when the stem block on which the LD is mounted is increased, there is a problem that the thermal resistance increases and the operating characteristics of the LD deteriorate. Furthermore, in the configuration using the mirror as in Patent Document 2, there is a problem that the cost of the mirror parts increases.

  10 and 11, the major axis direction of the emitted light 27x of the LD 27 is formed in the same direction as the minor axis direction (the width direction of the cover glass 26) of the effective diameter 23x of the cap 23. For this reason, the edge in the major axis direction of the outgoing light 27x is close to the edge in the minor axis direction of the cap 23, and the margin (Wa) of the effective diameter in the minor axis direction to avoid the influence of the light vignetting is limited. There was a problem that.

  Note that if the size of the outgoing light 27x in the major axis direction is reduced, the influence of optical vignetting can be avoided, but there is a problem that the mass productivity of the LD deteriorates. As described above, in the configuration of the conventional semiconductor laser package, (a) low thermal resistance, (b) mirrorless package, (c) downsizing, (d) hermetic sealing, and (e) prevention of influence of optical vignetting. There was a problem that the user's request could not be met.

  In view of the above problems, the present invention provides a semiconductor laser package that is thin, low-cost, expands a margin for avoiding the effects of optical vignetting, and can meet the requirements (a) to (e). Objective.

In order to achieve the above object, a semiconductor laser package according to the present invention includes a semiconductor laser having a first LD electrode and a second LD electrode, a submount substrate to which the semiconductor laser is fixed, and a submount substrate. Stem, first and second leads provided on the stem, a cover glass, and the major axis direction of the emitted light from the semiconductor laser emitted to the opposite side of the stem is the major axis direction of the effective diameter And a cap fixed to the stem to hermetically seal the semiconductor laser and the submount substrate , the first lead is welded to the first surface of the stem and is electrically connected to the stem, and the second leads are independent of each other. Is provided penetrating from the first surface of the stem to the second surface opposite to the stem to be insulated from the stem, and the submount substrate is interposed between the first lead and the second lead. The semiconductor laser is fixed to the side surface on the first lead side of the submount substrate, the first LD electrode is provided on the fixed surface with the submount substrate, and the submount substrate is fixed to the second surface of the submount substrate. The electrical connection from the second LD electrode provided on the surface facing the fixing surface of the semiconductor laser to the submount substrate directly from the second LD electrode to the submount substrate is a light emission port of the emitted light from the semiconductor laser. When the electrical connection from the submount substrate to the first lead is required via the first wire arranged on the stem side, the first LD electrode fixing surface on the submount substrate. And a first conductive pattern that connects the surface to be fixed to the stem is insulated from the joint portion of the first wire, and an electrical connection from the submount substrate to the second lead is connected to the stem of the submount substrate. Through the second wire than the fixing surface and a facing upper surface and the light exit of the semiconductor laser is disposed on the second lead side, characterized in that took place is insulated from the stem. According to this configuration, it is possible to meet the requirements of (a) low thermal resistance, (b) mirrorless package, (c) downsizing, and (d) hermetic sealing with respect to the semiconductor laser package from the user. Further , according to this configuration, the margin of optical vignetting with respect to the effective diameter of the cap is expanded , and there is no conductive member in the optical path of the emitted light of the semiconductor laser. It is possible to prevent deterioration of characteristics.

  The semiconductor laser package of the present invention can realize (a) low thermal resistance, (b) mirrorless package, (c) downsizing, and (d) hermetic sealing. Further, (e) it is possible to prevent the deterioration of the optical characteristics of the semiconductor laser due to optical vignetting.

  Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is an explanatory diagram showing a configuration according to an embodiment of the present invention. In FIG. 1A, a semiconductor laser package 1 includes a stem 2, a cap 3, an LD4, a submount substrate 5 on which LD4 is mounted, a pair of positive and negative leads, in this example, an anode lead 6 and a cathode lead 7. The wire 11 is provided. The LD 4 is fixed to the substrate 5 with a solder material A, for example, gold tin having a melting point of 283 ° C. The mounting surface of the substrate 5 with respect to the stem 2 is provided with an appropriate conductive pattern metallization, for example, a gold pattern, as illustrated in FIG. Here, the substrate 5 has a substantially rectangular parallelepiped die shape as shown in FIG. In the example of FIG. 1A, two leads, a cathode lead that passes through a through hole formed in the stem 2 and an anode lead 6 that is welded to the stem 2, are provided on the stem 2.

  On the stem 2, an appropriate solder material B having a melting point lower than that of the solder material A, for example, silver tin having a melting point of 221 ° C. is applied. The LD 4 is a double-sided electrode, and one electrode passes through a conductive pattern formed on the substrate 5 and the stem 2 and is conductively connected to one anode lead 6. The other electrode of the LD 4 is conductively connected to the other cathode lead 7 through the conductive pattern and wire 11 formed on the upper surface of the substrate 5. As described above, FIG. 1A shows a configuration of a semiconductor laser package for the anode common.

  FIG. 1B is an explanatory diagram showing the relationship between the emitted light 4x of the LD 4 and the effective diameter 3x of the cap 3. As shown in FIG. As shown in FIG. 1B, the long axis direction of the light emitted from the LD 4 is formed in the long axis direction P of the effective diameter 3 x of the cap 3. For this reason, the length Wb between the short axis direction Q edge part of the effective diameter 3x of the cap 3 and the short axis direction edge part of the emitted light 4x is expanded more than the example of FIG.11 (b). That is, in order to avoid the influence of the light vignetting, the margin for the effective diameter 3x of the cap 3 can be increased. Therefore, the occurrence of optical interference with the light emitted from the LD 4 can be prevented, and the operating characteristics of the LD 4 can be improved.

  The substrate 5 on which the LD 4 is mounted is manufactured in the following order in order to reduce the cost. (1) Firing of the substrate. (2) Polish the LD mounting surface. In this process, the LD mounting surface is made to have a surface roughness Ra of 0.2 μm or less / Ry 1.5 μm or less. This roughness cannot be formed without polishing. The reason why the polishing is performed in this manner is that if the mounting surface of the LD is rough, soldering cannot be performed satisfactorily and the heat dissipation performance is deteriorated. In addition, costs are reduced by using the cut surface of the substrate as it is without polishing other than the LD mounting surface of the substrate. (3) Metalization processing of the LD mounting surface. (4) Metalization processing on two surfaces other than the LD mounting surface. The processes (3) and (4) will be described with reference to FIG.

  FIG. 2 is an explanatory view showing an example of metallization of the substrate 5. The substrate 5 is made of a material having insulating properties such as SiC (silicon carbide) or AlN (aluminum nitride) and high thermal conductivity. Since such a sintered material is an insulator having good heat conduction, the heat dissipation characteristics are improved, and the characteristic deterioration due to the temperature rise of the LD 4 can be prevented. As described above, in the example described with reference to FIG. 1, a semiconductor laser package with low thermal resistance and high airtightness can be obtained. 2A is a plan view of the substrate 5, FIG. 2B is a side view, and FIG. 2C is a bottom view. 15 is a metallization A, 16 is a metallization B, and 17 is an insulating band that separates the metallization A and the metallization B. In the example of FIG. 2, the metallization is applied to three surfaces of the upper surface, the lower surface, and the side surface of the substrate.

  One electrode of the LD 4 is connected to the metallized B (16) formed on the side surface of the substrate by the conductive member 4a. The metallized B (16) is continuously formed on the side surface and the upper surface of the substrate 5. For this reason, by wire-bonding the wire 11 to the metallized B (16) formed on the upper surface of the substrate 5, as shown in FIG. 1A, one electrode of the LD 4 is used for one cathode of a pair of leads. Conductive connection is made to the lead 7. The other electrode of the LD 4 is connected to the metallization A (15) formed continuously on the side surface and the bottom surface of the substrate 5. The metallization A (15) formed on the bottom surface of the substrate 5 is connected to an appropriate conductive pattern formed on the top surface of the stem 2 and conductively connected to the anode lead 6. The other electrode of the LD 4 is conductively connected to the other anode lead 6 of the pair of leads through such a conductive path.

  Next, a method for manufacturing the semiconductor laser package having the configuration shown in FIG. 1 will be described. First, the substrate 5 is subjected to metallization and the solder material A is applied. The semiconductor laser 4 is disposed on the substrate 5 and the substrate 5 is heat-treated, and the LD 4 is fixed to the substrate 5 with the solder material A. Next, the wire 11 is connected to the metallization B (16) formed on the upper surface of the substrate 5 by wire bonding.

  The substrate 5 is placed on the stem 2 by applying a solder material B having a melting point lower than that of the solder material A, for example, silver tin having a melting point of 221 ° C. The substrate 5 is fixed to the stem 2 by heat treatment in this state. Instead of the solder material B such as silver tin, a thermosetting adhesive or a UV curable adhesive may be used. When the position accuracy of the light emitting point is specially required, the probe can be applied to the wire bonding position of the metallization B (16) to emit light from the LD 4, and the light emitting point can be arranged while directly observing the light emitting point.

  In this example, the LD 4 is first soldered to the substrate 5 with gold tin of the solder material A having a high melting point. Next, the substrate 5 is soldered to the stem 2 with silver tin of the solder material B whose melting point is 50 ° C. or more lower than that of the gold tin of the solder material A. At this time, since the melting point of silver tin of the solder material B is 50 ° C. or more lower than the melting point of gold tin of the solder material A, the solder of the LD 4 soldered first does not melt. For this reason, it is possible to prevent a decrease in accuracy due to the displacement of the LD 4. In this example, since the heat treatment is performed only twice, the heat load applied to the LD 4 is small, and the reliability can be improved.

  In the example of FIG. 1, the cathode of one electrode of the LD 4 is connected to the cathode lead 7 by a wire 11 in a direction orthogonal to the optical path of the emitted light of the LD 4. The anode of the other electrode of the LD 4 is conductively connected to the anode lead 6 through a conductive pattern formed on the lower side of the optical path of the emitted light from the LD 4. Therefore, in the semiconductor laser package of FIG. 1, since the conductive members of the double-sided electrodes of the LD 4 are arranged so as not to interfere with the optical path of the emitted light of the LD 4, there is an advantage that the occurrence of optical vignetting by the conductive members can be prevented. Further, the configuration of FIG. 1 is a mirrorless configuration because a mirror for raising the direction of the emitted light of the LD 4 is not required, and the cost of the semiconductor laser package can be reduced.

  In FIG. 1, when packaging the LD 4 with the cap 3 to which the cover glass 13 is attached, if necessary, the stem 2 on which the cap 3 and the LD 4 are mounted is washed. This is to remove impurities generated when the substrate 12 is fixed to the stem 2 with a solder material, a thermosetting adhesive, a UV curing adhesive, or the like. Further, impurities attached when the cover glass is attached to the inner surface of the cap with an adhesive or the like are also removed. Thereafter, the cap 3 is welded to the upper surface of the stem 2. By such processing, a semiconductor laser package that hermetically seals the LD 4 with high accuracy can be obtained. In the example of FIG. 1, since the substrate 5 has a cubic shape (dice shape) and is fixed to the stem 2, the height of the mounting member of the LD 4 does not increase, and the thermal resistance can be reduced.

  FIG. 3 is an exploded view showing a different embodiment of the present invention. The same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted. In the example of FIG. 3, the cathode lead 7 is also inserted into a sealing hole formed in the stem 2, and is fixed with a lead sealing glass 14 (not shown). Reference numeral 8 denotes a grounding lead. In the semiconductor laser package 1a, the LD 4 is mounted on the substrate 5 for submount. LD4 is a double-sided electrode, the anode of LD4 is connected to wire 12 by wire bonding, and the cathode of LD4 is connected to wire 11 by wire bonding. In the example of FIG. 3 also, the anode lead 6 and the cathode lead 7 are examples, and 6 and 7 may be a pair of positive and negative leads.

  FIG. 4 is an explanatory view showing an example of metallization of the substrate 5 in the example shown in FIG. 4A is a plan view of the substrate 5, FIG. 4B is a side view, and FIG. 4C is a bottom view. 18 is a metallized C, 19 is a metallized D, 20 is a metallized E, and 17 is an insulating band separating metallized A and metallized B. One electrode of the LD 4 is connected to the metallization D (19) formed on the side surface of the substrate by the conductive member 4b. In the example of FIG. 4, the metallization is formed on two surfaces, the upper surface and the side surface of the substrate.

  The metallization D (19) is continuously formed on the side surface and the upper surface of the substrate 5. Therefore, by wire-bonding the wire 11 to the metallized D (19) formed on the upper surface of the substrate 5, as shown in FIG. 3, one electrode of the LD 4 is connected to one anode lead 6 of the pair of leads. Conductive connection. The other electrode of the LD 4 is connected to the metallization C (18) formed continuously on the side surface and the upper surface of the substrate 5. By wire-bonding the wire 12 to the metallized C (18) formed on the upper surface of the substrate 5, the other electrode of the LD 4 is conductively connected to the other cathode lead 7 of the pair of leads as shown in FIG. The

  The metallized E (20) formed on the bottom surface of the substrate 5 functions only to fix the substrate 5 to the stem 2, and is not conductively connected to the stem 2. Therefore, in the example of FIG. 3, the substrate 5 is packaged in a floating state with respect to the stem 2. In the example of FIG. 3 as well, the mounting of the LD 4 on the substrate 5 and the mounting of the substrate 5 on the stem 2 are performed by the solder material A and the solder material B having a melting point lower than that of the solder material A, as described in FIG. A semiconductor laser package is manufactured by two heat treatments. For this reason, the thermal load on the LD 4 is reduced, and deterioration of the operating characteristics of the LD 4 can be prevented. In addition to the gold (Au), titanium (Ti), platinum (Pt), or the like can be used as the conductive material metallized on the submount substrate 5.

  Also in the configuration of FIG. 3, the wires 11 and 12 connected to the double-sided electrodes of the LD 4 are wire-bonded to the surface orthogonal to the optical path, so the conductive members of the wires 11 and 12 do not interfere with the optical path of the emitted light of the LD 4. . For this reason, when a floating package in which the LD 4 is mounted on the submount substrate 5 is configured, the occurrence of optical vignetting can be prevented. Also in the configuration of FIG. 3, the major axis direction of the light emitted from the LD 4 is formed in the major axis direction P of the effective diameter 3 x of the cap 3 as in FIG. 1. For this reason, the margin of optical vignetting with respect to the effective diameter of the cap can be expanded.

  FIG. 5 is an explanatory view showing a cross section of the semiconductor laser package of the example of FIG. In FIG. 8, the same parts as those in FIG. Here, the dimension (mm) between each part of AE is shown in Table 2. A is a dimension (0.15) between the outer periphery of the flange 2a of the stem and the end of the flange part 3a of the cap 3, and B is a dimension between the outer periphery of the flange part 3a of the cap 3 and the cylindrical part of the cap 3 (0. 3) and C are dimensions (0.15) between the outer periphery of the cylindrical portion of the cap 3 and the inner periphery of the cylindrical portion of the cap 3, and D is the inner periphery of the cylindrical portion of the cap 3 and the substrate 5 for submount. The dimension between the outer peripheries (0.15) and E is the dimension between the outer perimeter of the submount substrate 5 and the center of the LD 4 (0.65).

  As shown in Table 2, the total dimension of A to E is 1.4 mm, and the overall width direction dimension of the semiconductor laser package is 2.8 mm. Therefore, even if the dimensional restrictions A to D of the conventional semiconductor laser package as shown in FIG. 10A are used as they are, the thickness can be reduced from 3 mm to 2.8 mm. 10A, the LD 27 is fixed to the side surface of the stem block 24, and the major axis direction of the emitted light 27x of the LD 27 is the effective diameter of the cap 23 as shown in FIG. It was formed in the same direction as the short axis direction of 23x (the width direction of the cover glass 26). That is, since the thickness of the stem block 24 and the thickness of the LD 27 are added, the width direction dimension of the semiconductor laser package is increased, making it difficult to reduce the thickness.

  On the other hand, in the configuration of FIG. 5, as described in FIG. 1B, the LD 4 is mounted on the substrate so that the long axis direction of the emitted light of the LD 4 is formed in the long axis direction of the effective diameter of the cap 3. 5 is sub-mounted. For this reason, the dimension in the width direction of the semiconductor laser package only needs to take the width dimension of the substrate 5 into consideration, and the dimension of the LD 4 need not be considered because it is fixed within the width dimension of the substrate 5. Therefore, the semiconductor laser package can be made thinner as compared with the configuration of FIG.

  Further, since the height of the stem block for mounting the LD as described in FIG. 8 does not have to be increased, the thermal resistance is reduced. For example, the thermal resistance of the conventional semiconductor laser package described in FIG. 8 is 30 ° C./W, but in the example of FIG. 5, the thermal resistance is 25 ° C./W. With the configuration shown in FIG. 5, the margin between the effective diameter of the cover glass 13 and the beam diameter of the emitted light from the LD 4 passing therethrough can be expanded evenly in the X and Y planes.

  FIG. 6 is a schematic perspective view showing another embodiment of the present invention. In FIG. 6, a plurality of LDs 4 are mounted on a sub-mount bar-shaped substrate 5a. As a material for the substrate 5a, for example, a sintered material made of AlN (aluminum nitride) or SiC (silicon carbide) is used. The configuration in which the plurality of LDs 4 are mounted on the submount substrate 5a is a configuration using the same conductive member and solder material as described in FIG. Also in this case, only the mounting surface of the LD 4 is polished after firing the substrate 5a. Thereafter, metallization is applied to a predetermined portion of the LD 4 and a solder material A is applied to the joint surface with the substrate 5a.

  Next, the substrate 5a is heat-treated to fix the LD 4 to the substrate 5a. Then, the wire 11 is connected by wire bonding on the metallized surface of the LD 4. After the series of processes is completed, the substrate 5a on which the LD 4 is mounted is formed into a cuboid chip by dicing. At this time, if dicing grooves are formed on the back surface 5x of the substrate 5a, dicing can be performed smoothly. By performing the chip processing in this way, a large amount of semiconductor laser packages can be rapidly manufactured. As described with reference to FIG. 1, the submount substrate 5a mounted with the LD 4 in a chip is heat-treated with a solder material B having a melting point lower than that of the gold tin of the solder material A, for example, silver tin, and is fixed to the stem. .

For example, a nitride semiconductor laser can be used as the LD of the light source. When a nitride semiconductor laser is used as the light source, the semiconductor laser package of the present invention has a high degree of hermetic sealing, so that the lifetime of the nitride semiconductor laser can be extended. Further, In _X Al _Y Ga _1-XY N (0 ≦ _X ≦ 1, 0 ≦ _Y ≦ 1, _{X + Y} ≦ 1) is applied to the light emitting layer.
A nitride-based semiconductor light-emitting device using can also be used as a light source.

  As described above, according to the present invention, it is possible to provide a semiconductor laser package that is thin, low-cost, and configured to avoid the influence of optical vignetting.

It is explanatory drawing which shows embodiment of this invention. It is explanatory drawing which shows the board | substrate of FIG. It is explanatory drawing which shows other embodiment of this invention. It is explanatory drawing which shows the board | substrate of FIG. It is explanatory drawing which shows each dimension example of this invention. It is a perspective view which shows other embodiment of this invention. It is explanatory drawing which shows a prior art example. It is explanatory drawing which shows an example of the manufacturing process of FIG. It is explanatory drawing which shows a prior art example. It is explanatory drawing which shows the example of a semiconductor laser package. It is explanatory drawing which shows the cross-sectional shape of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1a ... Semiconductor laser package, 2 ... Stem, 3 ... Cap, 4 ... Semiconductor laser (LD) 5, 5a ... Submount substrate, 6 ... For anode Lead, 7 ... cathode lead, 11 ... first wire, 12 ... second wire, 14 ... glass for lead sealing, 15, 16, 18-20 ... metallization, 17 ... Insulation band

Claims (2)

A semiconductor laser having a first LD electrode and a second LD electrode, a submount substrate to which the semiconductor laser is fixed, a stem to which the submount substrate is fixed, and first and first provided on the stem 2 and a cover glass are attached, the major axis direction of the emitted light from the semiconductor laser emitted to the opposite side of the stem is defined as the major axis direction of the effective diameter, and is fixed to the stem and the semiconductor laser and A cap for hermetically sealing the submount substrate ;
The first lead is welded to the first surface of the stem and is electrically connected to the stem;
The second leads are provided independently from the first surface of the stem to the second surface opposite to the stem to be insulated from the stem;
The submount substrate is fixed between the first lead and the second lead and to the second surface of the stem;
The semiconductor laser is fixed to a side surface on the first lead side of the submount substrate,
The first LD electrode is provided on a fixing surface with the submount substrate and directly electrically connected to the submount substrate;
The electrical connection from the second LD electrode provided on the surface facing the fixing surface of the semiconductor laser to the submount substrate to the submount substrate is more than the light emission port of the emitted light from the semiconductor laser. Through a first wire arranged on the stem side,
When electrical connection from the submount substrate to the first lead is necessary, the first surface for connecting the fixing surface of the first LD electrode and the fixing surface to the stem is connected to the submount substrate. A conductive pattern is formed to be insulated from the joint portion of the first wire;
The electrical connection from the submount substrate to the second lead is arranged on the upper surface of the submount substrate facing the fixing surface with the stem and on the second lead side with respect to the light emitting port of the semiconductor laser. A semiconductor laser package, wherein the semiconductor laser package is insulated from the stem through a second wire . 2. The semiconductor laser package according to claim 1, wherein a plurality of the second leads are provided, and the plurality of second leads are insulated from each other .

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