JP4645908B2 - Manufacturing method of tape carrier for semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device tape carrier, and more particularly to a method for manufacturing a semiconductor device tape carrier provided with a plurality of mounting tape carriers along the longitudinal direction.

  Conventionally, as a method for manufacturing a semiconductor device, a method of forming a wiring pattern and mounting a semiconductor element on a long tape carrier for a semiconductor device intermittently transported at a predetermined pitch has become the mainstream. ing. In general, the above-mentioned tape carrier for a semiconductor device is formed with a transport hole (perforation hole) for tape feeding only at both edges in the tape width direction (for example, Patent Documents 1 and 2). .

  By the way, in recent years, there is known a method of dividing a tape carrier for a semiconductor device along the longitudinal direction and multi-striping a long mounting tape carrier for mounting a semiconductor element. In this method, the transport holes are formed not only on both edges in the tape width direction but also on the inner side of both edges in the tape width direction in the tape carrier for semiconductor devices before division.

  Below, the manufacturing method of the tape carrier for semiconductor devices for multi-stripping the tape carrier for mounting in a prior art is demonstrated. In the following description, a method for manufacturing a semiconductor device tape carrier (hereinafter referred to as “TAB tape base material”) used in a TAB (Tape Automated Bonding) method will be described as an example. Here, a mounting tape carrier (hereinafter referred to as “TAB tape”) obtained by dividing the TAB tape base material along the longitudinal direction is an LCD (Liquid Crystal Display) to which COF (Chip On Film) technology is applied. Used in liquid crystal display devices). Note that the TAB method is a method in which a semiconductor element is mounted on a tape carrier for a semiconductor device by wireless bonding.

  First, FIG. 5 shows a cross-sectional structure of a tape base material 20 ′ used as a material for the TAB tape base material 20. The tape base material 20 ′ is formed by forming a copper layer 22 as a conductive layer on one side of a polyimide resin tape 21 as an insulating layer by Cu (copper) plating via Cr (chromium) or the like and reinforcing it on the other side. It has a structure in which a film 23 is attached. Then, by processing the tape base material 20 ′ in the following procedure, the TAB tape base material 20 including a plurality of TAB tapes 26 (not shown) along the longitudinal direction is manufactured.

Below, the manufacturing method of the TAB tape base material 20 is demonstrated.
As shown in FIGS. 6 and 7A, first, a tape base material transport hole PH1 is formed in both edge portions of the tape base material 20 ′ by punching (punching step S1). Here, the tape base material transport hole PH1 is a transport hole used for transporting the tape base material 20 ′.

  Thereafter, a wiring pattern WP is formed on the copper layer 22 by performing each process (subtractive method) of resist coating S2, exposure S3, development S4, etching S5, and resist stripping S6 (FIG. 7B, (See (c)). Here, in the resist coating step S2, a liquid resist is used for fine pitch formation.

  After the wiring pattern WP is formed, Sn (tin) plating is performed on the wiring pattern WP for connection between a semiconductor element (not shown) and liquid crystal glass (not shown) (plating step S7). Subsequently, after the back side reinforcing film 23 is peeled off (peeling step S8), solder resist printing is performed to improve insulation and mechanical strength (printing step S9).

  Thereafter, as shown in FIG. 7 (d), the mounting transport hole PH2 is formed by punching, and the manufacture of the TAB tape base material 20 for multiple strips is completed (punching step S10). Here, the mounting transport hole PH2 is a transport hole used for transporting the TAB tape 26 obtained by dividing the TAB tape base material 20 along the longitudinal direction. Further, the mounting transport hole PH2 is formed in an inner portion in the tape width direction than the tape base material transport hole PH1.

  After the manufacture of the TAB tape base material 20 is completed, the TAB tape base material 20 is divided into approximately three equal parts along the longitudinal direction (slit step S11), and a total of three long TAB tapes 26 are manufactured. Thereafter, the TAB tape 26 is shipped after various inspections (inspection step S12, shipment step S13). Thereafter, a semiconductor element (not shown) is mounted on the TAB tape 26.

Japanese Patent Laid-Open No. 10-203064 (FIG. 1) JP 2001-28412 A (FIG. 3)

However, in the manufacturing method of the TAB tape base material 20 described above, since the tape base material transport hole PH1 and the mounting transport hole PH2 are formed in separate steps, the tape base material transport hole PH1 and the mounting transport hole PH2 In some cases, the relative positions of these were formed out of alignment. When the relative positions of the tape base material transport hole PH1 and the mounting transport hole PH2 are shifted, the wiring pattern WP formed with reference to the tape base material transport hole PH1 and the mounting transport hole PH2 are formed. Since the relative position is shifted, there is a possibility that the subsequent semiconductor element cannot be mounted satisfactorily.
Further, since the punching process is performed twice, the product may be scratched or foreign matters at the time of the second punching process. In this case, the yield may be reduced.

  Accordingly, the present invention provides a method for manufacturing a tape carrier for a semiconductor device that can suppress relative positional deviation between a tape base material transport hole and a mounting transport hole and can suppress generation of scratches and foreign matter due to punching. It is an issue to provide.

The present invention for solving the above problems is a semiconductor comprising a plurality of mounting tape carriers for mounting semiconductor elements, obtained by dividing a tape base material having a conductive layer formed on an insulating layer along the longitudinal direction. A method for manufacturing a tape carrier for an apparatus, comprising:
A step of forming a tape base material transport hole for transporting the tape base material before division on both edges of the tape base material, and the inside after the division, in the width direction inner side than the tape base material transport hole. Forming a mounting transport hole for transporting the mounting tape carrier, and forming the tape base material transport hole and forming the mounting transport hole in the same step.

  According to the present invention, the tape base material transport hole and the mounting transport hole are formed in the same process. Therefore, it is possible to suppress the relative displacement between the tape base material transport hole and the mounting transport hole, and also to suppress the generation of flaws and foreign matters associated with the formation of the transport hole (for example, punching). it can. Furthermore, since the conventional punching process of the mounting transport hole is not required, the manufacturing time can be shortened.

  In the present invention, the conductive layer may have a thickness of 12 μm or less, the insulating layer may have a thickness of 50 μm or less, and the width of the tape base material before division may be 96 mm or more. Furthermore, the total thickness of the dry film and the conductive layer may be less than the wiring pitch of the wiring pattern.

By setting the thickness of the conductive layer to 12 μm or less and the thickness of the insulating layer to 50 μm or less, it is possible to improve the bending characteristics of the tape carrier for semiconductor devices and secure the fine pitch of the wiring pattern. Here, the improvement of the bending characteristics is effective when the semiconductor device tape carrier is bent so as to be connected to the terminal on the LCD side, for example, when the semiconductor device tape carrier is used in an LCD to which the COF technology is applied.
Further, by setting the width of the tape base material (semiconductor device tape carrier) before division to 96 mm or more, for example, at least two mounting tape carriers having a width of 35 mm and 48 mm in width are secured. be able to.
Furthermore, by making the total thickness of the dry film and the conductive layer less than the wiring pitch, the wiring pattern can be miniaturized.

  Further, in the present invention, after the step of forming the tape base material transport hole and the step of forming the mounting transport hole are performed in the same step, the tape base material transport hole is formed at a portion on the inner side in the width direction than the tape base material transport hole. In addition, a dry film may be laminated including the mounting transport hole to form a wiring pattern on the conductive layer.

  According to this, when the wiring pattern is formed on the conductive layer, the conductive layer can be left around the mounting transport hole, so that the mechanical strength of the mounting transport hole can be increased. As a result, the mounting tape carrier can be favorably transported using the reinforced mounting transport holes in a semiconductor element mounting line or the like.

  According to the present invention, the tape base material transport hole and the mounting transport hole are formed together in one step, so that the positional deviation of the tape base material transport hole and the mounting transport hole, the scratches associated with the formation of the transport hole, Generation of foreign matter can be suppressed.

Next, embodiments of the present invention will be described in detail with reference to the drawings as appropriate.
In the drawings to be referred to, FIG. 1 is a manufacturing process diagram showing a TAB tape base material and a TAB tape manufacturing method according to the present embodiment. FIG. 2 is a cross-sectional view showing a state where a TAB tape base material and a TAB tape are formed from a tape base material, (a) showing a tape base material put into a production line, and (b) transporting holes. Forming step, (c) dry film laminating step, (d) exposing step, (e) developing step, (f) etching step, (g) resist stripping step, (h) plating step, ( i) shows a peeling process, (j) shows a printing process, and (k) shows a slitting process. Further, FIG. 3 is a plan view showing a state where the TAB tape base material is formed from the tape base material, (a) is a state in which all the transport holes are formed, (b) is a state in which the dry film is laminated, c) shows a state in which a wiring pattern is formed.
In the present embodiment, the present invention is applied to the above-described method for manufacturing a TAB tape base material. Further, the tape base material 20 ′ which is a material of the TAB tape base material 20 has a structure similar to the conventional one, that is, as shown in FIG. 2A, a polyimide resin tape (insulating layer) 21 and a copper layer (conductive). Layer) 22 and a reinforcing film 23. Here, the bonding between the polyimide resin tape 21 and the copper layer 22 may or may not use an adhesive. As a method not using an adhesive, a casting method in which a varnish-like resin is applied to the copper layer 22, a laminating method in which the copper layer 22 and the polyimide resin tape 21 are heat-bonded, and copper is bonded to the polyimide resin tape 21 through Cr or the like. And a method of depositing copper on the polyimide resin tape 21.

  In the manufacturing method of the TAB tape base material (semiconductor device tape carrier) 20 according to the present embodiment, as shown in FIG. 1, a transport hole forming step S1 ′, which is a step different from the conventional manufacturing step (see FIG. 6), The dry film laminating step S2 ′ is performed, and the same steps S3 to S9 and S11 to S13 as the conventional manufacturing steps are performed. Only the steps different from the conventional one will be described below.

  As shown in FIG. 2 (b), the transport hole forming step S1 ′ is punching in which the tape base material transport hole PH1 and the mounting transport hole PH2 are formed in the same process on the tape base material 20 ′ by pressing. It is a process. That is, this transport hole forming step S1 'is a step in which the conventional punching step S1 and the punching step S10 are combined. In the transport hole forming step S1 ′, it is preferable that the tape base material transport hole PH1 and the mounting transport hole PH2 are formed simultaneously, but the tape base material transport hole PH1 and the mounting transport hole PH2 are continuously formed. As long as this is performed, formation of any of the holes may be performed first.

  Here, as shown in FIG. 3A, the tape base material transport holes PH1 are formed in a line at a predetermined pitch along the longitudinal direction of the tape at both edges of the tape base material 20 ′, and the mounting transport holes PH2 are formed. Are formed in six rows at a portion on the inner side in the width direction from the tape base material transport hole PH1 so as to have substantially the same pitch as the tape base material transport hole PH1. In addition, when each row of the mounting transport holes PH2 is a set of two rows arranged with a space for forming the wiring pattern WP (see FIG. 3C) in the tape width direction, These groups are arranged in a total of three groups, and these groups are arranged at a predetermined pitch in the tape width direction.

  On the other hand, as shown in FIG. 2C, the dry film laminating step S2 ′ is a step of laminating (laminating) the thin film 10 on the inner side in the width direction of the tape base material transport hole PH1. At this time, all the transport holes PH2 for mounting are covered with the dry film 10 (see FIG. 3B). When a liquid resist is used instead of the dry film 10, a resist pattern that covers each mounting transport hole PH2 cannot be formed. Therefore, during the etching step S5 described later, the inside of the mounting transport hole PH2 is formed. Etching solution enters the copper layer 22 and the copper layer 22 around the mounting transport hole PH2 is removed. However, the problem is eliminated by adopting the dry film 10 as in this embodiment.

Next, how the TAB tape base material 20 is manufactured by the above-described manufacturing method will be described with reference to FIGS.
First, as shown in FIG. 2 (b) and FIG. 3 (a), the tape base material transport hole PH1 and the mounting transport hole PH2 are formed by pressing in the same process (transport hole forming process S1 ′; see FIG. 1). . Thereafter, as shown in FIGS. 2 (c) and 3 (b), each mounting transport hole is formed in the inner portion in the width direction of the tape base material transport hole PH1 formed at both edges of the tape base material 20 ′. The dry film 10 is laminated including PH2 (dry film laminating step S2 ′; see FIG. 1).

  Subsequently, in the exposure step S3, the wiring pattern WP is formed on the copper layer 22 at the inner side in the width direction of each mounting transport hole PH2, and the copper layer 22 is left around each mounting transport hole PH2. Then, pattern light is irradiated (exposed) through a photomask to form a predetermined resist pattern on the dry film 10 (see FIG. 2D). Thereafter, by performing steps S4 to S6 of development, etching, and resist stripping, a wiring pattern WP is formed on the copper layer 22 (see FIG. 3C), and reinforcement is made around each mounting transport hole PH2. The copper layer 22 is left (see FIGS. 2E to 2G).

  Thereafter, as in the conventional case, that is, as shown in FIGS. 2H to 2K, after Sn plating 24 is applied (plating step S7), the reinforcing film 23 is peeled off (peeling step S8). 25 is printed (printing step S9), and the manufacture of the TAB tape base material 20 shown in FIG.

  After the manufacture of the TAB tape base material 20 is completed, the TAB tape base material 20 is divided along the longitudinal direction to manufacture three TAB tapes 26 having a predetermined width (slit process S11). Thereafter, the TAB tape 26 is shipped after various inspections (inspection step S12, shipment step S13).

According to the above, the following effects can be obtained in the present embodiment.
In the transport hole forming step S1 ′, since the tape base material transport hole PH1 and the mounting transport hole PH2 are formed together, it is possible to suppress positional deviation between the tape base material transport hole PH1 and the mounting transport hole PH2. Further, since the punching process only needs to be performed once, it is possible to suppress the generation of scratches and foreign matters associated with the conventional two punching processes. Furthermore, since the punching process of the mounting transport hole PH2 which has been separately performed conventionally is not required, the manufacturing time can be shortened (see FIGS. 3 and 7).
Furthermore, since the copper layer 22 can be left around the mounting transport hole PH2 by employing the dry film 10, the mechanical strength of the mounting transport hole PH2 can be increased. As a result, the TAB tape 26 can be satisfactorily transported using the reinforced mounting transport hole PH2 in the semiconductor element mounting line.

In addition, this invention is not limited to the said embodiment, It can utilize with various forms so that it may illustrate below.
That is, in the above embodiment, the present invention is applied to the tape carrier for a semiconductor device used in the TAB method, but the present invention is not limited to this and can be applied to any type of tape carrier for a semiconductor device.
Further, the tape width, the material, the pitch of the transport holes, the number of rows of the transport holes, etc. are not particularly limited and can be arbitrarily set.

Examples of the above embodiment will be described below.
Various conditions in the present embodiment are as follows.
(1) Width of tape base material 20 ′ (TAB tape base material 20) before division: 158 mm
(2) TAB tape 26 width after division: 48 mm
(3) Thickness of the polyimide resin tape 21: 38 μm
(4) Copper layer 22 thickness: 8 μm
(5) Thickness of the dry film 10: 5 μm
(6) Wiring pitch in the wiring pattern WP: 40 μm

  Under the above conditions, the TAB tape base material 20 was manufactured using each of the conventional manufacturing method and the manufacturing method of the embodiment. As a result, as shown in FIG. 4, in the conventional manufacturing method, the maximum positional deviation was 35 μm, whereas in the manufacturing method of the above embodiment, it was found that it was suppressed to about 5 μm. That is, it has been confirmed that the maximum positional deviation is drastically improved in the manufacturing method of the embodiment.

In addition, the following method was employ | adopted as a measuring method of above-mentioned maximum position shift.
First, the position of the alignment mark of the product pattern (wiring pattern; formed on the basis of the tape base material transport hole PH1) is measured with a factory microscope using the mounting transport hole PH2 of the TAB tape base material 20 as a reference, By evaluating the deviation, the positional deviation between the tape base material transport hole PH1 and the mounting transport hole PH2 was measured. And this measurement was performed 30 times or more, and the maximum value at that time was defined as the maximum positional deviation.

Incidentally, the following effects can be obtained by manufacturing the TAB tape base material 20 under the various conditions described above.
(I) By making the thickness of the copper layer 22 12 μm or less and the thickness of the polyimide resin tape 21 50 μm or less, the bending characteristics of the TAB tape base material 20 (and the TAB tape 26) are improved, and the wiring pattern WP Secures a fine pitch.
(Ii) By setting the width of the tape base material 20 ′ (TAB tape base material 20) before division to 158 mm which is 96 mm or more, for example, at least two TAB tapes 26 having a width of 35 mm and TAB tapes 26 having a width of 48 mm are provided. Minutes can be secured.
(Iii) By making the total thickness of the dry film 10 and the copper layer 22 be less than 40 μm, the wiring pattern WP can be miniaturized.

It is a manufacturing process figure which shows the manufacturing method of the TAB tape base material and TAB tape which concern on this embodiment. It is sectional drawing which shows a mode that a TAB tape base material and a TAB tape are formed from a tape base material, (a) shows the tape base material thrown into a manufacturing line, (b) is a conveyance hole formation process, (c). Is a dry film laminating step, (d) is an exposure step, (e) is a development step, (f) is an etching step, (g) is a resist stripping step, (h) is a plating step, (i) is a peeling step, (J) shows the printing process, and (k) shows the slit process. It is a top view which shows a mode that a TAB tape preform | base_material is formed from a tape base material, (a) is the state which formed all the conveyance holes, (b) is the state which laminated the dry film, (c) is a wiring pattern. Each formed state is shown. It is the table | surface which compared the maximum position shift of the tape base material conveyance hole of each TAB tape base material manufactured with the manufacturing method of this embodiment, and the conventional manufacturing method, and the conveyance hole for mounting. It is sectional drawing which shows the structure of the conventional tape base material. It is a manufacturing process figure which shows the manufacturing method of the conventional TAB tape base material. It is a top view which shows a mode that a TAB tape base material is formed from a tape base material, (a) is the state which formed the tape base material conveyance hole, (b) is the state which apply | coated the liquid resist, (c) is a wiring pattern. (D) shows the state where the mounting transport holes are formed.

Explanation of symbols

S1 punching process (tape base material transport hole PH1)
S2 resist coating step S3 exposure step S4 development step S5 etching step S6 resist stripping step S7 plating step S8 peeling step S9 printing step S10 punching step (mounting transport hole PH2)
S11 Slit process S12 Inspection process S13 Shipping process S1 'Transport hole forming process S2' Dry film laminating process 10 Dry film 20 TAB tape base material (tape carrier for semiconductor device)
20 'Tape base material 21 Polyimide resin tape 22 Copper layer 23 Reinforcing film PH1 Tape base material transport hole PH2 Mounting transport hole WP Wiring pattern 24 Sn plating 25 Solder resist 26 TAB tape (Tape carrier for mounting)

Claims (4)

A method of manufacturing a tape carrier for a semiconductor device comprising a plurality of mounting tape carriers for mounting semiconductor elements, obtained by dividing a tape base material having a conductive layer formed on an insulating layer along the longitudinal direction. And
Forming a tape base material transport hole for transporting the tape base material before splitting on both edges of the tape base material; and
In the width direction inside than the tape base material conveyance holes, it is performed by the same step of forming a mounting conveying hole for transporting the mounting tape carrier after the division,
After the step of forming the tape base material transport hole and the step of forming the mounting transport hole are performed in the same step, the mounting transport hole is formed in the inner portion in the width direction than the tape base material transport hole. A tape carrier for a semiconductor device comprising: laminating a dry film including the top, exposing and developing the dry film to form a resist pattern covering the mounting transport hole, and then etching to form a conductive layer . Production method. It is a manufacturing method of the tape carrier for semiconductor devices according to claim 1,
A method of manufacturing a tape carrier for a semiconductor device, wherein the conductive layer has a thickness of 12 μm or less, and the insulating layer has a thickness of 50 μm or less. A method for producing a tape carrier for a semiconductor device according to claim 1 or 2,
A method of manufacturing a tape carrier for a semiconductor device, wherein the width of the tape base material before division is 96 mm or more. It is a manufacturing method of the tape carrier for semiconductor devices in any one of Claims 1-3 ,
A method of manufacturing a tape carrier for a semiconductor device, wherein a total thickness of the dry film and the conductive layer is less than a wiring pitch of the wiring pattern.

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