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JP4650995B2 - Lumped constant type nonreciprocal circuit device - Google Patents
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JP4650995B2 - Lumped constant type nonreciprocal circuit device - Google Patents

Lumped constant type nonreciprocal circuit device Download PDF

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JP4650995B2
JP4650995B2 JP2003295930A JP2003295930A JP4650995B2 JP 4650995 B2 JP4650995 B2 JP 4650995B2 JP 2003295930 A JP2003295930 A JP 2003295930A JP 2003295930 A JP2003295930 A JP 2003295930A JP 4650995 B2 JP4650995 B2 JP 4650995B2
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lumped
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permanent magnet
nonreciprocal circuit
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伸二 山本
久利 中原
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Proterial Ltd
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Description

本発明は、マイクロ波通信機器に使用されるアイソレータ、サーキュレータなどの集中定数型非可逆回路素子に関する。   The present invention relates to a lumped constant non-reciprocal circuit device such as an isolator or a circulator used in a microwave communication device.

一般にアイソレータ、サーキュレータ等の非可逆回路素子は、信号の伝送方向にはほとんど減衰がなく、かつ逆方向には減衰が大きくなるような機能を有しており、例えばマイクロ波帯、UHF帯で使用される携帯電話、自動車電話等の移動体通信機器の送受信回路部に用いられている。   In general, non-reciprocal circuit elements such as isolators and circulators have a function that hardly attenuates in the signal transmission direction and increases in the reverse direction. For example, they are used in the microwave band and the UHF band. It is used in a transmission / reception circuit unit of mobile communication devices such as mobile phones and automobile phones.

図4に、従来例の集中定数型アイソレータの分解斜視図を示す。この従来例は、下ケース21上にアース板30を配置し、その上にセラミック基板40が配置される。このセラミック基板40は、容量素子を構成する電極パターン43、44、45が形成され、中央に貫通穴41を有する。この容量素子用電極パターンの一つ45は、ダミー抵抗46に接続され、更にダミー抵抗46はアース電極47に接続されている。このアース電極47はスルーホール49でアース板30に接続される。このセラミック基板40の貫通穴41には、中心導体部が配置される。この中心導体部は、フェライト円板(フェリ磁性体)50を包むように折り込まれた中心導体56、57、58からなり、各中心導体間は絶縁されている。そして、永久磁石60が接着された上ケース61を下ケース21にはめ合わせ、構成されている。中心導体57、58は、上ケース61と下ケース21の間62から外部に引き出され、入出力端子を構成している。   FIG. 4 shows an exploded perspective view of a conventional lumped constant isolator. In this conventional example, a ground plate 30 is disposed on a lower case 21, and a ceramic substrate 40 is disposed thereon. The ceramic substrate 40 is formed with electrode patterns 43, 44, and 45 constituting a capacitive element, and has a through hole 41 in the center. One of the capacitive element electrode patterns 45 is connected to a dummy resistor 46, and the dummy resistor 46 is further connected to a ground electrode 47. The ground electrode 47 is connected to the ground plate 30 through a through hole 49. A central conductor portion is disposed in the through hole 41 of the ceramic substrate 40. The central conductor portion is composed of central conductors 56, 57, and 58 folded so as to enclose a ferrite disk (ferrimagnetic material) 50, and the central conductors are insulated from each other. The upper case 61 to which the permanent magnet 60 is bonded is fitted to the lower case 21 and configured. The center conductors 57 and 58 are drawn to the outside from the space 62 between the upper case 61 and the lower case 21 to constitute an input / output terminal.

この集中定数型非可逆回路素子が用いられる携帯電話などのマイクロ波通信機器の小型、薄型化の要求は強く、低コストで、かつ小型、薄型の集中定数型非可逆回路素子が強く望まれている。もちろん、非可逆回路素子としての特性を満足させる必要がある。このため、面実装タイプとすること、チップコンデンサ、平板コンデンサを用いることなど、種々の構成が検討されている。   There is a strong demand for miniaturization and thinning of microwave communication devices such as cellular phones in which this lumped constant nonreciprocal circuit element is used, and there is a strong demand for a low cost, small and thin lumped constant nonreciprocal circuit element. Yes. Of course, it is necessary to satisfy the characteristics as a non-reciprocal circuit device. For this reason, various configurations, such as a surface mount type, a chip capacitor, and a flat plate capacitor, have been studied.

また、従来用いていた永久磁石は、フェライト磁石(SrO・nFe2O3)が一般的であり、フェリ磁性体として用いるガーネットフェライトとの相性もあって、その他の磁石はあまり検討されなかった。   In addition, a conventional permanent magnet is generally a ferrite magnet (SrO.nFe2O3) and has compatibility with garnet ferrite used as a ferrimagnetic material, and other magnets have not been studied much.

本発明は、以上のことから、小型化、薄型化が可能な集中定数型非可逆回路素子を提供することを目的とする。   In view of the above, an object of the present invention is to provide a lumped-constant nonreciprocal circuit device that can be reduced in size and thickness.

第1の発明は、複数の中心導体をフェリ磁性体に近接して配置し、前記フェリ磁性体に直流磁界を印可する永久磁石を備える集中定数型非可逆回路素子において、
前記永久磁石は、Srおよび/またはBaの一部をR元素(R元素は、Yを含む希土類元素の少なくとも1種)で置換し、Feの一部をM元素(M元素は、Co、Mn、Ni及びZnからなる群から選ばれた少なくとも1種)で置換したマグネトプランバイト型結晶構造を有し、前記R元素及び/又はM元素が化合物の状態で仮焼後の粉砕工程で添加されているフェライト磁石である集中定数型非可逆回路素子である。
第2の発明は、複数の中心導体をフェリ磁性体に近接して配置し、前記フェリ磁性体に直流磁界を印可する永久磁石を備える集中定数型非可逆回路素子において、
前記永久磁石は、Srおよび/またはBaの一部をR元素(R元素は、Yを含む希土類元素の少なくとも1種)で置換し、Feの一部をM元素(M元素は、Co、Mn、Ni及びZnからなる群から選ばれた少なくとも1種)で置換したマグネトプランバイト型結晶構造を有し、前記R元素及び/又はM元素が化合物の状態で仮焼前の混合工程で添加されているとともに、仮焼後の粉砕工程でも添加されているフェライト磁石である集中定数型非可逆回路素子である。
第1及び第2の発明においては、仮焼後の粉砕工程で、更に焼結助剤を添加したフェライト磁石を用いるのが好ましく、仮焼温度よりも低い温度で焼結することが出来る。
第3の発明は、複数の中心導体をフェリ磁性体に近接して配置し、前記フェリ磁性体に直流磁界を印可する永久磁石を備える集中定数型非可逆回路素子において、
前記永久磁石は、Srおよび/またはBaの一部をR元素(R元素は、Yを含む希土類元素の少なくとも1種)で置換し、Feの一部をM元素(M元素は、Co、Mn、Ni及びZnからなる群から選ばれた少なくとも1種)で置換したマグネトプランバイト型結晶構造を有し、前記R元素の濃度がマグネトプランバイト型結晶粒内よりも粒界の方が高くなっているフェライト磁石である集中定数型非可逆回路素子である。
In a lumped-constant non-reciprocal circuit device including a plurality of central conductors arranged close to a ferrimagnetic body and including a permanent magnet that applies a DC magnetic field to the ferrimagnetic body,
In the permanent magnet, a part of Sr and / or Ba is replaced with an R element (R element is at least one kind of rare earth element including Y), and a part of Fe is replaced with an M element (M element is Co, Mn , Having a magnetoplumbite type crystal structure substituted with at least one selected from the group consisting of Ni and Zn), and the R element and / or M element is added in the pulverization step after calcination in a compound state It is a lumped constant type nonreciprocal circuit device which is a ferrite magnet.
A second invention is a lumped-constant nonreciprocal circuit device comprising a plurality of central conductors arranged close to a ferrimagnetic body, and comprising a permanent magnet that applies a DC magnetic field to the ferrimagnetic body.
In the permanent magnet, a part of Sr and / or Ba is replaced with an R element (R element is at least one kind of rare earth element including Y), and a part of Fe is replaced with an M element (M element is Co, Mn , Having a magnetoplumbite type crystal structure substituted with at least one selected from the group consisting of Ni and Zn), wherein the R element and / or M element is added in the compounding step before calcination in the compound state And a lumped constant type nonreciprocal circuit element which is a ferrite magnet added in the pulverization step after calcination.
In the first and second inventions, it is preferable to use a ferrite magnet further added with a sintering aid in the pulverization step after calcination, and sintering can be performed at a temperature lower than the calcination temperature.
According to a third aspect of the present invention, there is provided a lumped-constant nonreciprocal circuit device including a plurality of central conductors disposed close to a ferrimagnetic body and including a permanent magnet that applies a DC magnetic field to the ferrimagnetic body.
In the permanent magnet, a part of Sr and / or Ba is replaced with an R element (R element is at least one kind of rare earth element including Y), and a part of Fe is replaced with an M element (M element is Co, Mn , Having a magnetoplumbite type crystal structure substituted with at least one selected from the group consisting of Ni and Zn), and the concentration of the R element is higher at the grain boundaries than in the magnetoplumbite type crystal grains. It is a lumped constant type nonreciprocal circuit device which is a ferrite magnet.

従来のフェライト磁石に比較し、高い磁力を有するので集中定数型非可逆回路素子の小型、薄型化を可能とするものであり、又2GHz以上の高周波に対応した集中定数型非可逆回路素子を得ることができるものである。   Compared to conventional ferrite magnets, it has a higher magnetic force, which makes it possible to reduce the size and thickness of lumped-constant nonreciprocal circuit elements, and to obtain lumped-constant nonreciprocal circuit elements that can handle high frequencies of 2 GHz or higher. It is something that can be done.

本発明では、複数の中心導体をフェリ磁性体に近接して配置し、前記フェリ磁性体に直流磁界を印可する永久磁石を備える集中定数型非可逆回路素子において、前記永久磁石は、Srおよび/またはBaの一部をR元素(R元素は、Yを含む希土類元素の少なくとも1種)で置換し、Feの一部をM元素(M元素は、Co、Mn、Ni及びZnからなる群から選ばれた少なくとも1種)で置換したマグネトプランバイト型結晶構造を有し、SrCO とFe とを仮焼した後の湿式粉砕工程で、Fe(マグネタイト)と、化合物の状態の前記R元素及びM元素と、SrCO と、焼結助剤としてSiO とCaCO 添加され、得られたスラリーを磁場中で湿式成形した後、焼結したフェライト磁石を用いることにより、小型化、薄型化が可能となることを見出した。 In the present invention, in the lumped-constant non-reciprocal circuit device including a plurality of center conductors arranged close to the ferrimagnetic body and including a permanent magnet that applies a DC magnetic field to the ferrimagnetic body, the permanent magnet includes Sr and / or Alternatively, a part of Ba is substituted with an R element (R element is at least one rare earth element including Y), and a part of Fe is replaced with an M element (M element is a group consisting of Co, Mn, Ni, and Zn). A magnetoplumbite type crystal structure substituted with at least one selected from the above, and in a wet pulverization step after calcining SrCO 3 and Fe 2 O 3 , Fe 3 O 4 (magnetite), By using the sintered ferrite magnet after the above-mentioned R element and M element in the state , SrCO 3 , SiO 2 and CaCO 3 are added as sintering aids , and the resulting slurry is wet-formed in a magnetic field. It has been found that downsizing and thinning are possible.

いずれの場合も、R元素の濃度がマグネトプランバイト型結晶粒内よりも粒界の方が高くなっているのが好ましい。R元素がLaでM元素がCoのとき、又R元素がLaでM元素がCoとMn及び/又はZnであるとき、特に優れた磁気特性を得ることができる。   In any case, it is preferable that the concentration of the R element is higher in the grain boundary than in the magnetoplumbite type crystal grains. When the R element is La and the M element is Co, or when the R element is La and the M element is Co, Mn and / or Zn, particularly excellent magnetic properties can be obtained.

n値が6を超える場合にはマグネトプランバイト相以外の異相(例えばα−Fe)が生成し、磁気特性が大きく低下する。またn値が5未満の場合にはBrが大きく低下する。x値が0.01未満であれば、後添加又は前/後添加の効果が不十分であり、また0.4を超えれば逆に磁気特性が低下する。またM元素はCo単独であるか、CoとMn及び/又はNiであるのが好ましい。 When the n value exceeds 6, a different phase other than the magnetoplumbite phase (for example, α-Fe 2 O 3 ) is generated, and the magnetic characteristics are greatly deteriorated. When the n value is less than 5, Br decreases greatly. If the x value is less than 0.01, the effect of post-addition or pre- / post-addition is insufficient, and if it exceeds 0.4, the magnetic properties are conversely reduced. The M element is preferably Co alone, or Co and Mn and / or Ni.

この本発明の磁石によれば、従来のフェライト磁石に比較し、高い磁力を有し、しかもフェリ磁性体との相性も良く、集中定数型非可逆回路素子の小型化、薄型化を達成することができる。   According to the magnet of the present invention, compared with the conventional ferrite magnet, it has a high magnetic force and has good compatibility with the ferrimagnetic material, and the lumped constant type nonreciprocal circuit device can be reduced in size and thickness. Can do.

また、従来の集中定数型非可逆回路素子の用いられる周波数は、1MHzから2GHz付近であり、2GHzを超える高い周波数に対しては、満足する特性が得られる集中定数型非可逆回路素子を構成することは出来なかった。そのため、このような高い周波数では、分布定数型の非可逆回路素子が用いられている。本発明によれば、上記した永久磁石を用いることにより、2GHzを超える周波数帯で用いることができる集中定数型非可逆回路素子を得ることができ、しかも小型に構成することができた。   Further, the frequency used in the conventional lumped constant nonreciprocal circuit element is in the vicinity of 1 MHz to 2 GHz. For a high frequency exceeding 2 GHz, a lumped constant nonreciprocal circuit element capable of obtaining satisfactory characteristics is formed. I couldn't. For this reason, distributed constant type nonreciprocal circuit elements are used at such high frequencies. According to the present invention, by using the above-described permanent magnet, a lumped constant nonreciprocal circuit device that can be used in a frequency band exceeding 2 GHz can be obtained, and the device can be made compact.

本発明に係る一実施例の分解斜視図を図1に示す。この実施例は、円板状のシールド板から放射状に3つの中心導体4、5、6が突出した構造の導電板を用意し、その導電板の円板状部にフェライト円板3(フェリ磁性体)を配置する。そして、3つの中心導体4、5、6を折り曲げて重ねる。このとき、各中心導体4、5、6は絶縁されて重ねられる。このようにして、中心導体部分が構成される。   An exploded perspective view of an embodiment according to the present invention is shown in FIG. In this embodiment, a conductive plate having a structure in which three central conductors 4, 5, and 6 project radially from a disk-shaped shield plate is prepared, and a ferrite disk 3 (ferrimagnetic) is formed on the disk-shaped portion of the conductive plate. Body). Then, the three central conductors 4, 5, 6 are folded and overlapped. At this time, the central conductors 4, 5, and 6 are insulated and overlapped. In this way, the central conductor portion is configured.

次に樹脂ケース7は、中央に、中心導体部分用の円形状の凹部13aを有し、その周囲に容量素子用の凹部13b、13c、13dを有する。この凹部13a、13b、13c、13dの底部には、アース電極14aが形成されている。そして、このアース電極14aは、一体の導体板で構成されており、底面側では露出し、かつ側面部の外部端子のうちアース用の外部端子(15a、15b等)を構成している。また、中心導体が接続される端子電極部16a、16b、16cが形成されている。この端子電極部16a、16b、16cは側面の外部端子(15c等)に導通している。また、抵抗素子を配置するための貫通凹部17が形成されている。   Next, the resin case 7 has a circular concave portion 13a for the central conductor portion at the center, and has concave portions 13b, 13c, and 13d for the capacitive elements around it. A ground electrode 14a is formed at the bottom of the recesses 13a, 13b, 13c, and 13d. The ground electrode 14a is formed of an integral conductor plate, exposed on the bottom surface side, and constitutes ground external terminals (15a, 15b, etc.) among the external terminals on the side surface. Terminal electrode portions 16a, 16b, and 16c to which the central conductor is connected are formed. The terminal electrode portions 16a, 16b and 16c are electrically connected to external terminals (15c and the like) on the side surfaces. Further, a through recess 17 for arranging the resistance element is formed.

そして、下ケース12上に樹脂ケース7が配置される。このとき、下ケース12と樹脂ケース7のアース電極14aとは導通する。このアース電極14aと下ケース12とは、広い設置面積で対向し、十分なアースをとることが出来る。下ケース12は、樹脂ケース7の底部の凹部18に合致する構造となっている。これにより、樹脂ケース7の外部端子での面実装を可能としている。   Then, the resin case 7 is disposed on the lower case 12. At this time, the lower case 12 and the ground electrode 14a of the resin case 7 are electrically connected. The ground electrode 14a and the lower case 12 are opposed to each other with a wide installation area, and a sufficient ground can be obtained. The lower case 12 has a structure that matches the recess 18 at the bottom of the resin case 7. Thereby, surface mounting by the external terminal of the resin case 7 is enabled.

この樹脂ケース7の容量素子用の凹部13b、13c、13dにそれぞれ容量素子8、9、10を挿入する。この容量素子は、その上下面に電極が形成された平板コンデンサであり、下面の電極と凹部の底部に形成されたアース電極14aとは半田接続される。また、抵抗素子用の貫通凹部17に抵抗素子11が配置され、抵抗素子11の一方の電極は、貫通凹部17の下にある下ケース12上に配置され、半田接続される。   Capacitance elements 8, 9, and 10 are inserted into the capacitor element recesses 13b, 13c, and 13d of the resin case 7, respectively. The capacitive element is a flat plate capacitor having electrodes formed on the upper and lower surfaces thereof, and the electrode on the lower surface and the ground electrode 14a formed on the bottom of the recess are connected by soldering. Further, the resistance element 11 is disposed in the through hole 17 for the resistance element, and one electrode of the resistance element 11 is disposed on the lower case 12 below the through recess 17 and is soldered.

次いで、樹脂ケース7の中央の中心導体部分用の円形状の凹部13aに、上記した中心導体部分を配置する。このとき、中心導体部分の円板状のシールド板は、アース電極14aと半田接続される。これにより、中心導体の一端はアース接続される。   Next, the above-described center conductor portion is disposed in the circular recess 13 a for the center conductor portion at the center of the resin case 7. At this time, the disc-shaped shield plate of the central conductor portion is soldered to the ground electrode 14a. Thus, one end of the center conductor is grounded.

そして、中心導体4の一端は、容量素子8の上面の電極と抵抗素子11の一方の端子電極25に接続される。また、中心導体5の一端は、容量素子9の上面の電極と端子電極部16bに接続される。また、中心導体6の一端は、容量素子10の上面の電極と端子電極部16cに接続される。このとき、端子電極部16b、16cの高さは、容量素子9、10の上面の電極の高さと一致するように構成し、中心導体の接続性を良くしている。   One end of the center conductor 4 is connected to the electrode on the upper surface of the capacitive element 8 and one terminal electrode 25 of the resistance element 11. One end of the center conductor 5 is connected to the electrode on the upper surface of the capacitive element 9 and the terminal electrode portion 16b. One end of the center conductor 6 is connected to the electrode on the upper surface of the capacitive element 10 and the terminal electrode portion 16c. At this time, the heights of the terminal electrode portions 16b and 16c are configured to coincide with the heights of the electrodes on the upper surfaces of the capacitive elements 9 and 10, so that the connectivity of the center conductor is improved.

そして、フェライト円板3に直流磁界を印加する永久磁石2を上ケース1に位置決めし、上ケース1と下ケース12を接合させて、アイソレータを構成した。   And the permanent magnet 2 which applies a direct-current magnetic field to the ferrite disc 3 was positioned in the upper case 1, and the upper case 1 and the lower case 12 were joined, and the isolator was comprised.

本実施例では、永久磁石2は、矩形状であり、上ケース1の内面に位置決めされ、永久磁石2の側面の周囲と上ケースの内面とはほぼ密着状態で配置されている。永久磁石を矩形状とし、上ケースとほぼ密着状態とすることにより、ケース内いっぱいに永久磁石を配置でき、小型化に際し、有利である。   In the present embodiment, the permanent magnet 2 has a rectangular shape, is positioned on the inner surface of the upper case 1, and the periphery of the side surface of the permanent magnet 2 and the inner surface of the upper case are arranged in a close contact state. By making the permanent magnet into a rectangular shape and being in close contact with the upper case, the permanent magnet can be disposed throughout the case, which is advantageous for downsizing.

この実施例の永久磁石2について、以下に説明する。SrCO及びFeをSrO・nFe(n=5.9)の基本組成になるように配合し、湿式混合した後、1250℃で2時間大気中で仮焼した。仮焼粉をローラーミルで乾式粉砕を行い粗粉とした。その後アトライターにより湿式微粉砕を行い、平均粒径が約0.8μmの微粉を含むスラリーを得た。粗粉の微粉砕工程の初期に、粗粉重量を基準にして2.5重量%のLa及び1.2重量%のCoを添加するとともに、2〜8重量%のFe(マグネタイト)を添加した。さらに粗粉の微粉砕工程の初期に、粗粉重量を基準にして0.1重量%のSrCO、1.0重量%のCaCO及び0.3重量%のSiOを焼結助剤として添加した。得られた各微粉スラリーを10kOeの磁場中で湿式成形し、得られた成形体を1210〜1230℃で2時間焼結した。得られた焼結体の基本組成は、ほぼ下記組成式に対応している。
(Sr1−xLa)O・n[(Fe1−yCo
x=0.15、y=x/2n、n=5.32〜5.67この得られた一例の磁石と従来の磁石との磁気特性を表1に示す。
The permanent magnet 2 of this embodiment will be described below. SrCO 3 and Fe 2 O 3 were blended so as to have a basic composition of SrO · nFe 2 O 3 (n = 5.9), wet-mixed, and then calcined at 1250 ° C. for 2 hours in the air. The calcined powder was dry pulverized with a roller mill to obtain coarse powder. Thereafter, wet pulverization was performed with an attritor to obtain a slurry containing fine powder having an average particle diameter of about 0.8 μm. At the beginning of the coarse powder pulverization step, 2.5 wt% La 2 O 3 and 1.2 wt% Co 3 O 4 are added based on the weight of the coarse powder, and 2-8 wt% Fe 3 O 4 (magnetite) was added. Furthermore, at the initial stage of the coarse pulverization step, 0.1% by weight of SrCO 3 , 1.0% by weight of CaCO 3 and 0.3% by weight of SiO 2 are used as sintering aids based on the weight of the coarse powder. Added. Each obtained fine powder slurry was wet-molded in a magnetic field of 10 kOe, and the obtained molded body was sintered at 1210 to 1230 ° C. for 2 hours. The basic composition of the obtained sintered body substantially corresponds to the following composition formula.
(Sr 1-x La x ) O · n [(Fe 1-y Co y ) 2 O 3 ]
x = 0.15, y = x / 2n, n = 5.32 to 5.67 Table 1 shows the magnetic characteristics of the obtained example magnet and the conventional magnet.

Figure 0004650995
Figure 0004650995

このように、本発明に使用する永久磁石は、従来よりも高い磁気特性を有している。   Thus, the permanent magnet used for this invention has a magnetic characteristic higher than before.

この実施例によると、5mm×5mm×高さ2mmといった非常に小型、薄型の集中定数型非可逆回路素子を得ることが出来た。また、実施例の挿入損失特性を図2に、アイソレーション特性を図3に示す。本実施例によれば、2.4GHz帯の集中定数型非可逆回路素子を5mm×5mm×高さ2mmといった非常に小型に構成することができた。また、本発明は、2GHz以下の周波数であっても効果を発揮し、特に本発明によれば、高さ2mm以下の薄型の集中定数型非可逆回路素子を図ることに有効な技術である。   According to this example, a very small and thin lumped constant type nonreciprocal circuit device of 5 mm × 5 mm × height 2 mm could be obtained. Further, FIG. 2 shows an insertion loss characteristic of the embodiment, and FIG. 3 shows an isolation characteristic. According to the present example, the 2.4 GHz band lumped constant type nonreciprocal circuit device could be configured to be very small, such as 5 mm × 5 mm × height 2 mm. In addition, the present invention is effective even at a frequency of 2 GHz or less. In particular, according to the present invention, it is a technique effective for achieving a thin lumped constant type nonreciprocal circuit device having a height of 2 mm or less.

上記実施例は、アイソレータで説明したが、サーキュレータを同様の技術で構成できることは言うまでもない。また、本発明の永久磁石は、上記した基本組成を満足していれば、上記実施例の如く所望の特性の集中定数型非可逆回路素子を得ることができる。もちろん、永久磁石は円板形であっても良い。   Although the above embodiment has been described with an isolator, it is needless to say that the circulator can be configured with the same technique. Further, if the permanent magnet of the present invention satisfies the basic composition described above, a lumped-constant nonreciprocal circuit device having desired characteristics can be obtained as in the above embodiment. Of course, the permanent magnet may be disk-shaped.

本発明によれば、集中定数型非可逆回路素子の小型、薄型化を可能とするものであり、又2GHz以上の高周波に対応した集中定数型非可逆回路素子を得るこことができるものである。   According to the present invention, the lumped-constant nonreciprocal circuit element can be reduced in size and thickness, and a lumped-constant nonreciprocal circuit element corresponding to a high frequency of 2 GHz or more can be obtained. .

本発明に係る一実施例の分解斜視図である。It is an exploded perspective view of one example concerning the present invention. 本発明に係る実施例の挿入損失特性である。It is an insertion loss characteristic of the Example which concerns on this invention. 本発明に係る実施例のアイソレーション特性である。It is an isolation characteristic of the Example which concerns on this invention. 従来例の分解斜視図である。It is a disassembled perspective view of a prior art example.

符号の説明Explanation of symbols

1 上ケース
2 永久磁石
3 フェライト円板
4、5、6 中心導体
7 樹脂ケース
8、9、10 容量素子
11 抵抗素子
12 下ケース
13a 中心導体部分用凹部
13b、13c、13d 容量素子用凹部
14a アース電極
15a、15b、15c 外部端子
16a、16b、16c 端子電極部
17 抵抗素子用貫通凹部
18 凹部
DESCRIPTION OF SYMBOLS 1 Upper case 2 Permanent magnet 3 Ferrite disc 4, 5, 6 Center conductor 7 Resin cases 8, 9, 10 Capacitance element 11 Resistance element
12 Lower case 13a Center conductor recess 13b, 13c, 13d Capacitor recess 14a Ground electrodes 15a, 15b, 15c External terminals 16a, 16b, 16c Terminal electrode 17 Resistance element through recess 18 Recess

Claims (2)

複数の中心導体をフェリ磁性体に近接して配置し、前記フェリ磁性体に直流磁界を印可する永久磁石を備える集中定数型非可逆回路素子において、
前記永久磁石は、Srおよび/またはBaの一部をR元素(R元素は、Yを含む希土類元素の少なくとも1種)で置換し、Feの一部をM元素(M元素は、Co、Mn、Ni及びZnからなる群から選ばれた少なくとも1種)で置換したマグネトプランバイト型結晶構造を有し、
SrCO とFe とを仮焼した後の湿式粉砕工程で、Fe(マグネタイト)と、化合物の状態の前記R元素及びM元素と、SrCO と、焼結助剤としてSiO とCaCO 添加され、得られたスラリーを磁場中で湿式成形した後、焼結したフェライト磁石であることを特徴とする集中定数型非可逆回路素子。
In a lumped-constant non-reciprocal circuit device that includes a plurality of central conductors arranged close to a ferrimagnetic body and a permanent magnet that applies a DC magnetic field to the ferrimagnetic body,
In the permanent magnet, a part of Sr and / or Ba is replaced with an R element (R element is at least one kind of rare earth element including Y), and a part of Fe is replaced with an M element (M element is Co, Mn , Having a magnetoplumbite type crystal structure substituted with at least one selected from the group consisting of Ni and Zn),
In a wet pulverization step after calcining SrCO 3 and Fe 2 O 3 , Fe 3 O 4 (magnetite), the R element and M element in a compound state , SrCO 3, and SiO as a sintering aid A lumped-constant nonreciprocal circuit device characterized in that it is a ferrite magnet in which 2 and CaCO 3 are added and the resulting slurry is wet-molded in a magnetic field and then sintered .
前記R元素の濃度がマグネトプランバイト型結晶粒内よりも粒界の方が高くなっているフェライト磁石であることを特徴とする請求項1乃至3のいずれかに記載の集中定数型非可逆回路素子。 4. A lumped constant irreversible circuit according to claim 1, wherein the R element is a ferrite magnet having a grain boundary higher than that in the magnetoplumbite crystal grains. element.
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