JP4670503B2 - Pressing device and pressing method - Google Patents

Description

  The present invention relates to a technique for pressing one object toward another object.

  2. Description of the Related Art Conventionally, a technique for joining main surfaces of two substrates such as a semiconductor substrate in manufacturing a multilayer device or the like is known. In an apparatus for joining substrates, usually, two substrates are joined by pressing one substrate toward the other while the main surfaces of both substrates are in contact with each other. In such an apparatus for pressing two objects, in order to press the object evenly, a tool that applies a force to the support part that supports one object and the other object and presses it toward the support part. Various techniques have been proposed for adjusting the parallelism.

  For example, in the pressure device of Patent Document 1, a tool that is pressed toward an object placed on a lower plate is attached to a spherical bearing, and the lower plate is in a state where the object is not placed. A technique for adjusting the parallelism of the tool to the lower plate by pressing the tool against the lower plate and fixing the spherical bearing so as not to slide is disclosed.

  Moreover, in the bonding apparatus of patent document 2, the bonding tool which adsorb | sucks a bare chip to the front-end | tip is attached to the rod via the spherical bearing in the other end side, and an operator adjusts the inclination of a rod with a micrometer. A technique for adjusting the parallelism of a bonding tool to a printed circuit board is disclosed.

In the anodizing apparatus of Patent Document 3, there is a technique for copying the surface of the positive electrode to the back surface of the substrate by pressing the positive electrode toward the substrate via a flexible contact assurance mechanism such as rubber. It is disclosed.
JP 2001-223244 A JP 2000-49199 A JP 2004-103800 A

  By the way, in patent document 1 and patent document 2, since the spherical bearing is utilized in order to adjust the inclination of a tool, the structure of a press mechanism will be complicated. Moreover, since the process of adjusting the parallelism of a tool exactly before the process of actually pressing a target object is required, there exists a limit in improvement of work efficiency. Furthermore, in the parallelism adjustment in the bonding apparatus of Patent Document 2, a special paper that converts pressure into a color and displays it is disposed between the bonding tool and the printed circuit board, and the operator presses the bonding tool to press the paper. Since the inclination of the bonding tool is adjusted by visually observing the color change, the adjustment result varies depending on the skill level of the operator.

  Further, in Patent Document 3, it is considered that the above-described problem is solved by the contact assurance mechanism, but it is only disclosed that the contact assurance mechanism is a member such as a rubber or a spring. There is no disclosure of a specific shape of the guarantee mechanism or a specific connection mode with the lower electrode to which the contact guarantee mechanism is attached.

  This invention is made | formed in view of the said subject, and while the structure of a parallelism adjustment part is simplified, the parallelism of the 1st contact area of a 1st target object and the 2nd contact area of a 2nd target object It aims at pressing a 1st target object equally with respect to a 2nd target object, adjusting with high precision.

The invention according to claim 1 is a pressing device that presses the first object toward the second object, the first holding unit holding the first object, and the first of the first object. A second holding part that holds the second object while the contact area is opposed to the second contact area of the second object, and the first holding part relatively moves toward the second holding part. And a pressing mechanism that presses the first object toward the second object, and the first holding part and a predetermined mounting part with respect to the pressing direction of the first holding part. A plate-like parallel that connects the first holding portion and the mounting portion and that causes the first contact area to follow the second contact area when the first object is pressed against the second object. A degree adjusting unit, and the parallel degree adjusting unit overlaps the first object with respect to the pressing direction of the first holding unit. A central part connected to one of the first holding part and the attaching part; an outer peripheral part located outside the central part and connected to the other of the first holding part and the attaching part; A connecting portion that connects the central portion and the outer peripheral portion and has flexibility, and is disposed between the pressing mechanism and the parallelism adjusting portion in a state of being separated from the parallelism adjusting portion; Ru and a central portion abutting member abuts on the central portion of the parallelism adjustment unit.

  Invention of Claim 2 is a press apparatus of Claim 1, Comprising: The said connection part of the said parallelism adjustment part passes along the said center of the said 1st target object, and is parallel to the said pressing direction. The central portion and the outer peripheral portion are connected at equal intervals in a circumferential direction centered on the central axis.

  The invention according to claim 3 is the pressing device according to claim 2, wherein the central portion and the outer peripheral portion of the parallelism adjusting portion are axisymmetric about the central axis.

  A fourth aspect of the present invention is the pressing device according to any one of the first to third aspects, wherein the central portion, the connecting portion, and the outer peripheral portion have the same thickness.

  The invention according to claim 5 is the pressing device according to any one of claims 1 to 4, wherein the first contact region and the second contact region are joined by pressing by the pressing mechanism. .

  The invention according to claim 6 is the pressing device according to claim 5, wherein the first object held by the first holding part and the second object held by the second holding part. A chamber that isolates the first object from the outside air, and the pressing of the first object against the second object is performed in the chamber in a reduced pressure or inert gas environment.

  The invention according to claim 7 is the pressing device according to claim 5 or 6, wherein at least one of the first object and the second object is a semiconductor substrate.

Invention of Claim 8 is a pressing method which presses a 1st target toward a 2nd target, Comprising: a) The plate-shaped parallelism adjustment part arrange | positioned at the attachment part regarding the predetermined pressing direction A step of holding the first object by the holding part connected to the attachment part via the b, and b) making the first contact area of the first object opposite the second contact area of the second object B) holding the second object while c) moving the holding portion relative to the second object, thereby copying the first contact area to the second contact area. And c step of pressing the first object toward the second object by a pressing mechanism while the parallelism adjusting unit overlaps the first object with respect to the pressing direction of the holding unit. A central part connected to one of the holding part and the mounting part, and an outer side of the central part An outer peripheral part that is positioned and connected to the other of the holding part and the attachment part, and a connecting part that connects the central part and the outer peripheral part and has flexibility, and before the pressing in the step c The central contact member disposed between the pressing mechanism and the parallelism adjusting unit is separated from the central part of the parallelism adjusting unit, and when the pressing in the step c, the center A part contact member contacts the central part of the parallelism adjusting part.

  In the present invention, the structure of the parallelism adjusting unit is simplified, and the first object is accurately adjusted while adjusting the parallelism between the first contact area of the first object and the second contact area of the second object. Can be pressed evenly against the second object. In the invention of claim 6, the structure in the chamber can be simplified.

  FIG. 1 is a front view showing a configuration of a substrate bonding apparatus 1 which is a pressing apparatus according to an embodiment of the present invention. The substrate bonding apparatus 1 uses a substantially disc-shaped semiconductor substrate (hereinafter referred to as “first substrate”) 91 as a first object to a substantially disc-shaped semiconductor substrate (hereinafter referred to as “first object”) as a second object. It is an apparatus that joins the main surfaces, which are the contact areas of both substrates, by pressing toward the substrate 92, and is used to manufacture MEMS (Micro Electro Mechanical Systems) devices and the like. In FIG. 1, for convenience of illustration, a part of the configuration of the substrate bonding apparatus 1 is drawn in cross section (the same applies to FIG. 4).

  As shown in FIG. 1, the substrate bonding apparatus 1 holds the first substrate 91 in the chamber 2 and the chamber 2 in which the first substrate 91 and the second substrate 92 are housed and isolated from the outside air, and the first substrate 91 The pressure head 3 that presses 91 toward the second substrate 92, the second holding portion 41 that holds the second substrate 92 by electrostatic force in the chamber 2, and the chamber 2 has a reduced pressure environment or an inert gas environment And an imaging unit 5 that images the first substrate 91 and the second substrate 92 held by the pressing head 3 and the second holding unit 41.

  The pressing head 3 includes a first holding unit 31 that holds the first substrate 91 by electrostatic force and holds the first substrate 91 on the (−Z) side main surface (hereinafter referred to as “-Z” side). 911 is opposed to a main surface (hereinafter referred to as “upper surface”) 921 on the (+ Z) side of the second substrate 92 held by the second holding portion 41. In the present embodiment, almost the entire lower surface 911 of the first substrate 91 is a region that will contact the second substrate 92 (hereinafter referred to as “contact region”), and the upper surface 921 of the second substrate 92. Since the entire contact area is in contact with the first substrate 91, the upper surface 921 of the first substrate 91 and the lower surface 911 of the second substrate 92 may be referred to as contact regions of both substrates.

  The pressing head 3 is connected to the first holding unit 31 via the disk-shaped member 311 on the (+ Z) side of the first holding unit 31 and is pressed when the first substrate 91 is pressed against the second substrate 92. A plate-like (so-called membrane structure) parallelism adjusting unit 32 that follows the lower surface 911 of one substrate 91 to the upper surface 921 of the second substrate 92, and a circle connected to the (+ Z) side of the parallelism adjusting unit 32 It is connected to the mounting portion 33 via the annular mounting portion 33, the disk-shaped member 331 and the substantially cylindrical shaft 332, and the first holding portion 31 is relatively separated from the second holding portion 41. The holding part raising / lowering mechanism 34 which moves to a direction and the direction which approaches (that is, raise / lower to the Z direction in FIG. 1) is provided. A plurality of pin-shaped fixing members 312 fixed to the member 331 are loosely fitted to the member 311, and the width of the lower end of each fixing member 312 is widened to prevent it from coming off. The shaft 332 is inserted into an opening provided on the (+ Z) side surface of the chamber 2, and the opening is sealed by a bellows 333.

  In the pressing head 3, the first holding part 31 and the attaching part 33 are connected by a parallelism adjusting part 32 arranged between the first holding part 31 and the attaching part 33 in the Z direction (that is, the pressing direction). . Further, the first holding portion 31 is moved relative to the second holding portion 41 together with the parallelism adjusting portion 32 and the attachment portion 33 by the holding portion raising / lowering mechanism 34, whereby the first holding portion 31 held by the first holding portion 31. The first substrate 91 is pressed toward the second substrate 92. In other words, the holding unit lifting mechanism 34 is a pressing mechanism that presses the first substrate 91 toward the second substrate 92. The pressing head 3 is provided on the (−Z) side of the member 331 so as to be separated from the parallelism adjusting unit 32 and is in contact with the approximate center of the parallelism adjusting unit 32 when the first substrate 91 is pressed. 313 is further provided, and the surface on the (−Z) side of the central contact member 313 is substantially spherical (part). In addition, in FIG. 1, the distance between the center part contact member 313 and the parallelism adjustment part 32 is drawn larger than actual.

  FIG. 2 is an enlarged plan view showing the parallelism adjusting unit 32. As shown in FIG. 2, the parallelism adjusting unit 32 has a circular central portion 321 centered on a predetermined central axis 320 (that is, axially symmetric about the central axis 320), and is positioned outside the central portion 321. And an annular outer peripheral part 322 centered on the central axis 320 (that is, axially symmetric about the central axis 320), and a central part 321 and an outer peripheral part 322 extending radially about the central axis 320. And a plurality of connecting portions 323 having flexibility. The central portion 321, the outer peripheral portion 322, and the connecting portion 323 have the same thickness, and the central portion 321 and the outer peripheral portion 322 are connected at equal intervals in the circumferential direction around the central axis 320 by the connecting portion 323. The In the present embodiment, the central portion 321 and the outer peripheral portion 322 are connected by connecting portions 323 that are arranged every 45 ° in the circumferential direction around the central axis 320. Such a parallelism adjusting unit 32 is manufactured by processing a metal plate having a certain thickness.

  The parallelism adjusting unit 32 is not limited to a so-called thin plate, and may be a plate having a certain thickness. Further, in the case of a thick plate, the elasticity of the connecting portion 323 is negligible, but when semiconductor substrates are joined as in the present embodiment, only a very high degree of parallelism adjustment is required. Therefore, the elasticity of the connecting portion 323 may be small.

  As shown in FIGS. 1 and 2, in the pressing head 3, the central portion 321 is connected to the first holding portion 31 via the member 311, and the outer peripheral portion 322 is connected to the mounting portion 33, thereby holding the first holding portion. The part 31 and the attaching part 33 are connected by the parallelism adjusting part 32. In the parallelism adjusting unit 32, the central portion 321 overlaps the center of the first substrate 91 with respect to the pressing direction of the first holding portion 31 (that is, the Z direction), and the central axis 320 passes through the center of the first substrate 91. 1 is parallel to the pressing direction of the holding portion 31.

  As shown in FIG. 1, the imaging unit 5 includes two imaging windows 51 for imaging the (+ Z) side and the (−Z) side, and the two imaging windows 51 are integrated in the X direction in the chamber 2. It is possible to advance and retreat. The imaging unit 5 is inserted into an opening provided on the (+ X) side surface of the chamber 2, and the opening is sealed with a bellows.

  The substrate bonding apparatus 1 is arranged on the (−Z) side of the second holding unit 41 and moves the second holding unit 41 in the X direction and the Y direction, and the center of the second holding unit 41. A holding unit rotating mechanism 43 that rotates the second holding unit 41 about a rotation axis that extends in the Z direction through the image, and displays images of the first substrate 91 and the second substrate 92 captured by the imaging unit 5. Based on this, the position and orientation of the second substrate 92 are adjusted in the chamber 2, so that the first substrate 91 and the second substrate 92 are aligned.

  The substrate bonding apparatus 1 further includes a high-frequency power source 22 connected to an electrode provided in the first holding unit 31, and the electrode provided in the second holding unit 41 is grounded. In the substrate bonding apparatus 1, in the process of bonding the first substrate 91 and the second substrate 92, the first holding unit 31 and the second holding unit 41 use the first holding unit 31 and the second holding unit 41 in the chamber 2 in a predetermined reduced pressure environment or inert gas environment. The first substrate 91 and the second substrate 92 are held in a separated state, and a high frequency voltage is applied from the high frequency power supply 22 to the first holding unit 31 in this state, whereby the first holding unit 31 and the second holding unit. A high frequency voltage is applied between the two and 41 to generate plasma. As a result, the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 (that is, the contact area between the two substrates) are irradiated with plasma, and water, organic matter, etc. adhering to the contact area between the two substrates Unnecessary substances are removed and surface modification of the contact area is performed.

  In other words, in the substrate bonding apparatus 1, the high-frequency power source 22, the electrode in the first holding unit 31, and the electrode in the second holding unit 41 are energized in the contact area between the first substrate 91 and the second substrate 92. An energy wave irradiation mechanism for irradiating a certain plasma is formed, and when the energy wave irradiation mechanism is activated, a so-called plasma cleaning process is performed on the contact region of both substrates. In the case where the first holding unit 31 is formed of a conductor such as a metal, it is not necessary to provide an electrode in the first holding unit 31, and the entire first holding unit 31 is formed of the first substrate 91 and the first holding unit 31. One of the pair of electrodes arranged with the second substrate 92 interposed therebetween (the same applies to the second holding portion 41).

  Next, the flow of bonding between the first substrate 91 and the second substrate 92 by the substrate bonding apparatus 1 will be described. FIG. 3 is a diagram illustrating a flow of a bonding operation by the substrate bonding apparatus 1. When the substrates are bonded by the substrate bonding apparatus 1, first, the gate of the chamber 2 is opened, and the first substrate 91 is carried into the chamber 2 from the gate, and as shown in FIG. In the first holding unit 31 (step S11). Subsequently, in the same manner as the first substrate 91, the second substrate 92 carried into the chamber 2 is held by the second holding unit 41, and the first substrate 91 and the second substrate 92 are separated from each other. The lower surface 911 of 91 and the upper surface 921 of the second substrate 92 face each other in the Z direction (that is, the contact areas of both substrates face each other) (step S12). The holding of the first substrate 91 and the second substrate 92 by the first holding unit 31 and the second holding unit 41 may be performed in parallel, and the holding of the second substrate 92 is more than holding of the first substrate 91. It may be done first.

  When the first substrate 91 and the second substrate 92 are held in the chamber 2 by the first holding unit 31 and the second holding unit 41, the gate of the chamber 2 is closed and the first substrate 91 and the second substrate 92 are moved. Isolated from outside air. Then, the air in the chamber 2 is exhausted by the environment adjusting mechanism 21 (for example, a vacuum pump and a gas supply mechanism), and a processing gas such as argon (Ar) gas is supplied to the chamber 2 so that the inside of the chamber 2 has a predetermined reduced pressure environment (or , Inert gas environment) (step S13).

  When the inside of the chamber 2 is in a reduced pressure environment, the imaging unit 5 located on the (+ X) side of the first holding unit 31 and the second holding unit 41 moves in the (−X) direction, and a two-dot chain line in FIG. Located at the position indicated by. The two imaging windows 51 are located between the first substrate 91 and the second substrate 92 facing each other, and are provided on the lower surface 911 of the first substrate 91 via the (+ Z) imaging window 51 (for example, Then, a pattern provided on the upper surface 921 of the second substrate 92 is imaged through the imaging window 51 on the (−Z) side (step S14).

  Next, a displacement amount of the relative position of the first substrate 91 with respect to the second substrate 92 is obtained based on the images of the first substrate 91 and the second substrate 92 acquired by the imaging unit 5. The second substrate 92 held by the second holding unit 41 is moved and rotated by the holding unit moving mechanism 42 and the holding unit rotating mechanism 43, and the relative position of the first substrate 91 with respect to the second substrate 92 is changed. Then, the orientation is adjusted and the first substrate 91 and the second substrate 92 are aligned (so-called alignment) (step S15).

  In the pressing head 3, the lower surface of the member 311 connected to the first holding portion 31 is slightly in contact with the wide end portion of the fixing member 312, and the position of the member 311 is fixed to the member 331. This prevents the parallelism adjusting unit 32 from being deformed by the weight of the first substrate 91, the first holding unit 31, and the member 311. As a result, a change in the position of the first substrate 91 due to the deformation of the parallelism adjusting unit 32 is prevented, and the first substrate 91 and the second substrate 92 can be aligned with high accuracy.

  When the first substrate 91 and the second substrate 92 are aligned, the two imaging windows 51 of the imaging unit 5 are integrally moved in the (+ X) direction, and from between the first substrate 91 and the second substrate 92. evacuate. Then, the high-frequency power supply 22 is activated, and plasma is irradiated to the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 in a reduced pressure environment to perform a plasma cleaning process on the first substrate 91 and the second substrate 92. (Step S16).

  FIG. 4 is a front view of the substrate bonding apparatus 1 showing how the first substrate 91 and the second substrate 92 are being bonded. When the plasma cleaning process is completed, the first holding unit 31 is moved in the (−Z) direction by the holding unit lifting mechanism 34 so that the first substrate 91 is relatively brought closer to the second substrate 92, and the first substrate 91 is moved. The lower surface 911 of the second substrate 92 contacts the upper surface 921 of the second substrate 92 (that is, the contact region of both substrates contacts) (step S17).

  Subsequently, a chamber in a reduced pressure environment (or an inert gas environment) is obtained by applying a force in the (−Z) direction to the first holding unit 31 via the parallelism adjusting unit 32 by the holding unit lifting mechanism 34. 2, the first substrate 91 is pressed toward the second substrate 92 to bond the first substrate 91 and the second substrate 92 (step S18).

  In the pressing head 3, the force in the (−Z) direction applied to the outer peripheral portion 322 (see FIG. 2) of the parallelism adjusting portion 32 via the mounting portion 33 by the holding portion lifting mechanism 34 is flexible. The force is transmitted to the central portion 321 via the portion 323, and the first substrate 91 is pressed toward the second substrate 92 together with the first holding portion 31 by this force. Accordingly, when pressed, the connecting portion 323 bends and the member 311 moves slightly upward with respect to the fixed member 312, so that the contact between the distal end portion of the fixed member 312 and the lower surface of the member 311 is released, and the parallelism adjusting portion The central portion 321 of the 32 abuts against the central abutment member 313.

  As described above, when the first substrate 91 is pressed, the connecting portion 323 bends (that is, elastically deforms), whereby in the substrate bonding apparatus 1, the lower surface 911 of the first substrate 91 is relative to the upper surface 921 of the second substrate 92. Even if it is slightly tilted, the central portion 321 of the parallelism adjusting section 32 is in contact with the central contact member 313 and smoothly tilts, and the first substrate 91 is tilted (for example, a 6-inch type wafer). The lower surface 911 of the first substrate 91 follows the upper surface 921 of the second substrate 92 by correcting the inclination of the difference between the distances from the second holding portion 41 at both ends of the diameter to about 10 μm. In FIG. 4, the bending of the connecting portion 323, the inclination of the first substrate 91 and the second substrate 92, and the distance between the lower surface of the member 311 and the fixing member 312 are drawn larger than actual.

  In the substrate bonding apparatus 1, only the second holding unit 41 or both the first holding unit 31 and the second holding unit 41 move in the Z direction, whereby the first substrate 91 is moved relative to the second substrate 92. Thus, the first substrate 91 and the second substrate 92 may be joined together relatively close to each other.

  When the bonding of the first substrate 91 and the second substrate 92 is completed, the suction of the first substrate 91 by the first holding unit 31 is released, and the first holding unit 31 rises to the (+ Z) side and the first substrate Leave 91. At this time, the connecting portion 323 returns to the original state, the lower surface of the member 311 and the tip of the fixing member 312 come into contact, and the first holding portion 31 is returned to the initial position before pressing. Then, after air is supplied into the chamber 2 by the environment adjusting mechanism 21, the gate of the chamber 2 is opened, and the first substrate 91 and the second substrate 92 are carried out of the chamber 2, and the first substrate 91 and the second substrate are discharged. 92 joining is completed.

  As described above, in the substrate bonding apparatus 1, the parallelism adjusting unit 32 provided between the first holding unit 31 and the holding unit lifting mechanism 34 has the first holding unit 31 that holds the first substrate 91. The connected central part 321 and the outer peripheral part 322 connected to the holding part lifting mechanism 34 via the attachment part 33 are connected by a flexible connecting part 323. Accordingly, when the first substrate 91 is pressed against the second substrate 92, the parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 is adjusted, and the lower surface 911 of the first substrate 91 is adjusted to the second substrate 92. The upper surface 921 of 92 can be imitated.

  As described above, in the substrate bonding apparatus 1, the structure of the mechanism related to the adjustment of the parallelism (that is, the parallelism adjustment unit 32) is simplified as compared with the case where the spherical bearing or the like is used for the adjustment of the parallelism of the substrate. In addition, the first substrate 91 can be evenly pressed against the second substrate 92 while accurately adjusting the parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92. As a result, the bonding quality between the first substrate 91 and the second substrate 92 can be improved. Further, when adjusting the substrate bonding apparatus 1 prior to the bonding of the substrates, it is not necessary to strictly adjust the parallelism between the lower surface of the first holding unit 31 and the upper surface of the second holding unit 41. The work time and labor related to the adjustment of 1 can be reduced.

  In the substrate bonding apparatus 1, the central portion 321 and the outer peripheral portion 322 of the parallelism adjusting unit 32 are connected by the connecting portion 323 at equal intervals in the circumferential direction around the central axis 320. The force applied to the outer peripheral portion 322 from the center is transmitted to the central portion 321 evenly in the circumferential direction. As a result, the first substrate 91 can be pressed evenly against the second substrate 92. Moreover, since the central part 321 and the outer peripheral part 322 of the parallelism adjusting part 32 are axially symmetric about the central axis 320, the first substrate 91 can be pressed evenly against the second substrate 92. As a result, the quality of bonding between the first substrate 91 and the second substrate 92 can be further improved.

  In the parallelism adjustment unit 32, the central part 321, the outer peripheral part 322, and the connecting part 323 have the same thickness, so that the structure of the parallelism adjustment part 32 can be further simplified. As a result, the parallelism adjustment is performed. The part 32 can be manufactured more easily.

  In the substrate bonding apparatus 1, the parallelism adjusting unit 32 having a simple structure is provided in the chamber 2, whereby the structure in the chamber 2 can be simplified. As a result, the uniformity of the plasma distribution irradiated to the first substrate 91 and the second substrate 92 can be improved, and the bonding quality of the first substrate 91 and the second substrate 92 can be improved. In addition, abnormal discharge of plasma in the chamber 2 can be prevented. Furthermore, the adjustment and maintenance of the substrate bonding apparatus 1 can be simplified.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various change is possible.

  For example, the parallelism adjusting unit 32 may be formed of a material other than metal (for example, resin), and the central portion 321, the outer peripheral portion 322, and the connecting portion 323 may be formed of different materials. In addition, the thickness of the central portion 321, the outer peripheral portion 322, and the connecting portion 323 is not necessarily the same. For example, each portion is formed of the same material, and the thickness of the connecting portion 323 is the central portion 321 and the outer peripheral portion 322. By making it thinner, flexibility may be imparted only to the connecting portion 323.

  5 to 9 are plan views showing other preferable examples of the parallelism adjusting unit. In the parallelism adjusting unit 32 a shown in FIG. 5, the circular central part 321 and the annular outer peripheral part 322 are connected by connecting parts 323 provided every 120 ° in the circumferential direction around the central axis 320. . Thus, the angle between the adjacent connection parts 323 may be changed as appropriate. Further, only from the viewpoint of simplifying the structure of the parallelism adjusting portion and pressing the first substrate 91 against the second substrate 92 to some extent evenly, there are a plurality of intervals between the connecting portions 323 adjacent in the circumferential direction. The connecting portions 323 may be provided so as to be different from each other.

  In the parallelism adjusting unit 32 b shown in FIG. 6, the connecting part 323 a radially spreads around the central axis 320 and has eight linear parts 3231 that connect the central part 321 and the outer peripheral part 322, and the central axis 320. An annular portion 3232 that connects the eight straight portions 3231 in the vicinity of the central portion of the straight portion 3231 in the radial direction. In the parallelism adjusting unit 32b, a plurality of annular portions 3232 may be provided between the central portion 321 and the outer peripheral portion 322.

  The parallelism adjusting unit 32c shown in FIG. 7 has a disk shape in which a plurality of circular openings arranged at equal intervals in the circumferential direction around the central axis 320 are formed. In the parallelism adjusting unit 32c, a circular portion inside the inscribed circle (virtual circle indicated by a two-dot chain line in FIG. 7) 3233 that is in contact with the plurality of openings from the central axis 320 side corresponds to the central portion 321. An annular portion outside the circumscribed circle 3234 that contacts the plurality of openings from the outside corresponds to the outer peripheral portion 322. Further, a portion (excluding the opening) between the inscribed circle 3233 and the circumscribed circle 3234 becomes a connecting portion 323b that connects the central portion 321 and the outer peripheral portion 322. In the parallelism adjustment unit 32c, a plurality of openings other than a circle (for example, a rectangular shape) may be formed.

  In the parallelism adjusting unit 32d and the parallelism adjusting unit 32e shown in FIGS. 8 and 9, the central part 321 has a rectangular shape, and the outer peripheral part 322 connected by the central part 321 and the connecting part 323 has an outer periphery and an inner peripheral part. It is an annular shape that is rectangular. As described above, the central portion 321 and the outer peripheral portion 322 do not necessarily have an axisymmetric shape around the central axis, such as a circular shape or an annular shape, and may have other shapes as appropriate. . For example, the central portion 321 may be an ellipse or a polygon.

  In the substrate bonding apparatus 1 according to the above-described embodiment, the attachment portion 33 of the pressing head 3 has an annular shape and is connected to the outer peripheral portion 322 of the parallelism adjustment portion 32 on the entire circumference, but the attachment portion 33 is not necessarily annular. For example, a plurality of members arranged uniformly in the circumferential direction around the central axis 320 may be used. In this case, when the first substrate 91 is pressed against the second substrate 92, a force in the (−Z) direction is applied to a plurality of locations in the circumferential direction of the outer peripheral portion 322.

  In the substrate bonding apparatus 1, the central part 321 of the parallelism adjusting part 32 is connected to the first holding part 31, and the outer peripheral part 322 is connected to the attaching part 33, but conversely, the central part 321 is the attaching part. 33 and the outer peripheral part 322 may be connected to the first holding part 31. Even in this case, the structure of the parallelism adjusting unit 32 can be simplified, and the first parallelism between the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 is accurately adjusted. The substrate 91 can be pressed evenly against the second substrate 92.

  In the substrate bonding apparatus 1, the attachment portion 33 and the parallelism adjusting portion 32 are provided outside the chamber 2, and the parallelism adjusting portion 32 and the first holding portion 31 are connected via a shaft or the like that penetrates the chamber 2. Good. Thereby, the structure in the chamber 2 can be further simplified.

  In the substrate bonding apparatus 1, a mechanism related to the alignment of the first substrate 91 and the second substrate 92 may also be provided outside the chamber 2. For example, a window part may be provided on the lower surface of the chamber 2, and an imaging part for imaging the first substrate 91 may be provided below the window part. In this case, the infrared light emitted from the light source arranged outside the chamber 2 is further transmitted through the second substrate 92 through the through holes provided in the window part and the second holding part 41, and the first light is transmitted. The lower surface 911 of the substrate 91 is irradiated. Then, the reflected light from the pattern on the lower surface 911 of the first substrate 91 is guided out of the chamber 2 through the second substrate 92, the through hole and the window of the second holding unit 41, and received by the imaging unit. As a result, the first substrate 91 is imaged. Further, the holding unit moving mechanism 42 and the holding unit rotating mechanism 43 that move and rotate the second holding unit 41 may be provided below the second holding unit 41 outside the chamber 2.

  The mechanism for holding the first substrate 91 in the first holding unit 31 is a vacuum pump as long as the first substrate 91 can be held from above in a reduced pressure environment or an inert gas environment where the plasma cleaning process is performed. The first substrate 91 may be held by a mechanical chuck (the same applies to the holding mechanism of the second substrate 92 in the second holding unit 41).

  The energy waves irradiated on the lower surface 911 of the first substrate 91 and the upper surface 921 of the second substrate 92 in the chamber 2 are not necessarily limited to plasma. For example, a fast atom beam (FAB (Fast Atom Beam)) or ion is used. A cleaning process may be performed on the contact area of both substrates with a beam or the like. In addition, after performing the cleaning process by irradiating the contact area of both substrates with ultraviolet rays, the two substrates are bonded by contacting and pressing the contact area while applying heat or ultrasonic waves to the substrates. May be. The gas used for the cleaning treatment is not limited to argon, and may be nitrogen, oxygen, fluorine, hydrogen, or the like. Further, the energy wave irradiation may be performed only on one of the contact regions of the first substrate 91 and the second substrate 92. The contact area of the first substrate 91 is not necessarily limited to the entire lower surface 911 (the same applies to the second substrate 92).

  The bonding of the first substrate 91 and the second substrate 92 by the substrate bonding apparatus 1 is not necessarily performed by the contact after the surface modification by the energy wave. For example, the first substrate 91 and the second substrate 92 are heated. However, it may be performed by pressing the first substrate 91 toward the second substrate 92. In this case, the chamber 2 may be omitted as appropriate.

  The substrate bonding apparatus 1 may be used for bonding between a semiconductor substrate and another type of substrate (for example, a ceramic substrate), in addition to being used for bonding between semiconductor substrates. These substrates (for example, metal substrates) may be used for bonding. Moreover, the board | substrate joined by the board | substrate joining apparatus 1 may be shapes other than disk shape (for example, rectangular thin plate shape).

  The configuration of the substrate bonding apparatus 1 is suitable for bonding between substrates in which adjustment of parallelism at the time of bonding is important because of having a relatively large outer shape. It can also be applied to other devices that press toward the object. For example, the present invention may be used in an electronic component mounting apparatus that presses and mounts electronic components that are smaller than a substrate and have bumps toward a circuit board. In this case, the lower surface of the bump of the electronic component and the surface of the electrode of the circuit board serve as a contact area between the two objects handled by the mounting apparatus. Moreover, the structure of the board | substrate joining apparatus 1 may be utilized for the apparatus which presses and affixes ACF (anisotropic conductive resin film) toward a circuit board.

  Furthermore, the structure of the board | substrate joining apparatus 1 may be utilized for the leveling apparatus which presses the top part of the some bump formed on the electronic component or the circuit board with a leveling plate, and arranges the height of a bump. In this case, the main surface that comes into contact with the bumps of the leveling plate and the tops of the plurality of bumps serve as contact regions for the two objects handled by the leveling device.

  INDUSTRIAL APPLICABILITY The present invention can be used for various techniques for pressing a substrate toward another object, including a substrate bonding apparatus that bonds a substrate by pressing it toward another substrate.

Front view showing board bonding equipment Plan view showing the parallelism adjustment unit The figure which shows the flow of joining operation | movement of a 1st board | substrate and a 2nd board | substrate. Front view showing board bonding equipment The top view which shows the other preferable example of a parallelism adjustment part The top view which shows the other preferable example of a parallelism adjustment part The top view which shows the other preferable example of a parallelism adjustment part The top view which shows the other preferable example of a parallelism adjustment part The top view which shows the other preferable example of a parallelism adjustment part

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate bonding apparatus 2 Chamber 31 1st holding | maintenance part 32, 32a-32e Parallelism adjustment part 33 Attaching part 34 Holding | maintenance part raising / lowering mechanism 41 2nd holding | maintenance part 91 1st board | substrate 92 2nd board | substrate 320 Central axis 321 Central part 322 Outer part 323, 323a, 323b connecting portion 911 lower surface 921 upper surface S11-S18 step

Claims (8)

A pressing device that presses the first object toward the second object,
A first holding unit for holding a first object;
A second holding unit for holding the second object while making the first contact area of the first object face the second contact area of the second object;
A pressing mechanism that presses the first object toward the second object by relatively moving the first holding part toward the second holding part; and
It arrange | positions between the said 1st holding | maintenance part and a predetermined attachment part regarding the pressing direction of the said 1st holding | maintenance part, and connects the said 1st holding | maintenance part and the said attachment part, and said 2nd of a said 1st target object. A plate-like parallelism adjustment unit that causes the first contact area to follow the second contact area when pressed against an object;
With
The parallelism adjusting unit is
A central portion that overlaps the first object with respect to the pressing direction of the first holding portion and is connected to either the first holding portion or the attachment portion;
An outer peripheral part located outside the central part and connected to the other of the first holding part and the attachment part;
A connecting part that connects the central part and the outer peripheral part and has flexibility;
With
A central contact member that is disposed between the pressing mechanism and the parallelism adjustment unit in a state of being separated from the parallelism adjustment unit, and that contacts the central part of the parallelism adjustment unit during the pressing;
A pressing device comprising: The pressing device according to claim 1,
The connecting portion of the parallelism adjusting unit, at regular intervals and with the central portion and the peripheral portion in the circumferential direction around the center axis of the predetermined parallel as the pressing direction center of the first object And a pressing device characterized by being connected. The pressing device according to claim 2,
The pressing device according to claim 1, wherein the central portion and the outer peripheral portion of the parallelism adjusting portion are axisymmetric about the central axis. The pressing device according to any one of claims 1 to 3,
The pressing device, wherein the central portion, the connecting portion, and the outer peripheral portion have the same thickness. The pressing device according to any one of claims 1 to 4,
The pressing device, wherein the first contact region and the second contact region are joined by pressing by the pressing mechanism. The pressing device according to claim 5,
A chamber for isolating the first object held by the first holding unit and the second object held by the second holding unit from outside air;
The pressing device according to claim 1, wherein the pressing of the first object against the second object is performed in the chamber in a reduced pressure or inert gas environment. The pressing device according to claim 5 or 6,
At least one of the first object and the second object is a semiconductor substrate. A pressing method of pressing a first object toward a second object,
a) a step of holding the first object by a holding part connected to the attaching part via a plate-like parallelism adjusting part arranged in the attaching part with respect to a predetermined pressing direction;
b) b step of holding the second object while making the first contact area of the first object face the second contact area of the second object;
c) By moving the holding portion relative to the second object, the first object is moved to the second object while the first contact area follows the second contact area. C process of pressing by a pressing mechanism toward
With
The parallelism adjusting unit is
A central portion that overlaps the first object with respect to the pressing direction of the holding portion and is connected to one of the holding portion and the attachment portion,
An outer peripheral part located outside the central part and connected to the other of the holding part and the mounting part;
A connecting portion that connects the central portion and the outer peripheral portion and has flexibility;
With
Before the pressing in the step c, a central contact member disposed between the pressing mechanism and the parallelism adjusting unit is separated from the central part of the parallelism adjusting unit,
The pressing method, wherein the central contact member is in contact with the central portion of the parallelism adjusting portion during the pressing in the step c.

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