JP4672121B2 - Sputtering target, sputtering apparatus using the same, and thin film manufacturing method - Google Patents

Description

表１から明らかなように、実施例１〜３による各スパッタリングターゲットによれば、比較例１に比べてダスト発生量が低減している。特に、ターゲットライフ近くのダスト発生量が大幅に低減されていることが分かる。
【００６２】
【発明の効果】
以上説明したように、本発明のスパッタリングターゲットによれば、ターゲット本体とターゲット押え治具との間隙に堆積した再付着物の剥離、脱落が抑えられているため、この再付着物の剥離、脱落に基づくダストの発生を有効に抑制することができる。従って、そのようなスパッタリングターゲットを用いた本発明のスパッタリング装置によれば、配線膜などの不良発生原因となる膜中へのダストの混入を抑制することが可能となる。
【図面の簡単な説明】
【図１】 本発明の第１の実施形態によるスパッタリングターゲットの概略構造を示す断面図である。
【図２】 図１に示すスパッタリングターゲットの要部を拡大して示す断面図である。
【図３】 本発明の第２の実施形態によるスパッタリングターゲットの要部構造を示す断面図である。
【図４】 本発明の第３の実施形態によるスパッタリングターゲットの要部構造を示す断面図である。
【図５】 本発明の一実施形態によるスパッタリング装置の概略構成を示す図である。
【図６】 従来の代表的なスパッタリングターゲットの概略構造を示す断面図である。
【図７】 図６に示すスパッタリングターゲットの要部を拡大して示す断面図である。
【符号の説明】
１１……ターゲット本体
１２……バッキングプレート
１３……段状部
１３ａ…断面
１３ｂ…段差面
１４……ターゲット押え治具
１６、１８、２０……スパッタリングターゲット
１７、１９……凹部（ダスト抑制部）[0001]
BACKGROUND OF THE INVENTION
  The present invention provides a sputtering target and a sputtering apparatus using the sputtering target,AndThin filmManufacturing methodAbout.
[0002]
[Prior art]
In manufacturing semiconductor components, liquid crystal components, and the like, sputtering is applied to the formation of various thin films used as wirings, electrodes, and the like. Specifically, a thin film of conductive metal such as Al, Cu, Ti, Mo, W, Mo-W alloy, MoSi2, WSi2 is applied to a deposition substrate such as a semiconductor substrate or a glass substrate by applying a sputtering method. A thin film of a conductive metal compound such as TiSi2 or a thin film of a metal compound such as TiN or TaN is formed and used as a wiring, an electrode, a barrier layer, or the like.
[0003]
The sputtering method is a film forming method in which a surface of a sputtering target is impacted by charged particles, sputtered particles are knocked out of the target, and the sputtered particles are deposited on a substrate disposed to face the target to form a thin film. As a sputtering target used when such a film forming method is applied, a structure in which a target body made of a film forming material is held by a substrate called a backing plate is generally applied.
[0004]
FIG. 6 is a cross-sectional view showing a schematic structure of a conventional general sputtering target, and FIG. 7 is an enlarged cross-sectional view showing an outer peripheral portion thereof. In these drawings, reference numeral 1 denotes a target main body made of a film forming material, and the target main body 1 is placed on or bonded to a backing plate 2.
[0005]
Further, a stepped portion 3 is provided on the outer peripheral portion of the target body 1, and a cross section 3 a of the stepped portion 3 is held by a ring-shaped target pressing jig 4. When the target main body 1 is not joined to the backing plate 2, the target main body 1 is fixed to the backing plate 2 by a target fixing jig (not shown) provided at the center of the target main body 1, for example. A clearance is provided between the cut-off surface 3b of the target main body 1 and the target pressing jig 4, so that a slight gap 5 exists.
[0006]
[Problems to be solved by the invention]
By the way, in the film-forming process using the conventional sputtering target as described above, the generation of dust due to the target becomes serious as the integration, reliability, and function of semiconductor elements and the like progress. Recognized as a problem. The dust mentioned here is, for example, fine particles (particles) with a diameter of 0.2 μm or more. If such fine particles are mixed in the thin film, the cause of short-circuiting between wirings or poor wiring opening Therefore, the manufacturing yield of electronic parts such as semiconductor elements and liquid crystal display elements is reduced.
[0007]
For example, industrially efficient magnetron sputtering is mainly applied, and the target body 1 has an erosion part and a non-erosion part from the principle. Some of the sputtered particles reach the substrate, some fly to the periphery, and some return to the target body 1 side again. Of the particles returning to the target side, the particles adhering to the non-erosion portion are basically not sputtered again, so that the reattachment deposits as the sputtering progresses. If the reattached film is peeled off due to any factor, it will be mixed into the thin film formed as dust.
[0008]
As described above, peeling of the reattachment is one of the causes of dust generation. As a measure for preventing such dust, the surface roughness of the non-erosion part is made rougher than that of the erosion part to prevent the reattachment from peeling or dropping (see, for example, JP-A-6-306597). Various measures are taken, such as blasting particles into the surface and preventing the reattachment from peeling off or falling off by the anchor effect (see, for example, JP-A-9-76843).
[0009]
However, although the dust reduction measures so far have a certain effect, the dust tends to increase as the sputtering progresses to near the target life. In particular, it is difficult to prevent the reattachment adhered and deposited in the gap 5 between the stepped surface 3b of the stepped portion 3 provided on the outer peripheral side of the target body 1 and the target pressing jig 4 from being peeled off. There is a problem that peeling and dropping of the reattachment from the gap 5 is a major cause of dust generation.
[0010]
The present invention was made in order to cope with such problems, and by effectively preventing the adhesion of the deposited reattachment to the gap between the outer periphery of the target body and the target pressing jig, and dropping off, It aims at providing the sputtering target which made it possible to reduce generation | occurrence | production of dust, and the sputtering apparatus using the same.
[0011]
[Means for Solving the Problems]
  The first sputtering target of the present invention is,A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In a sputtering target comprising a target pressing jig, on the step surface of the stepped portion provided on the outer peripheral side of the target body,More than 0.5mm deepA concave dust suppression portion is formed.
[0012]
  The second sputtering target of the present invention is,A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In the sputtering target comprising a target pressing jig, on the step surface of the stepped portion provided on the outer peripheral side of the target body,More than 0.5mm deepA concave dust suppression portion is formed.
[0013]
  The third sputtering target of the present invention is,A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In the sputtering target comprising a target pressing jig, on the step surface and the step surface of the stepped portion provided on the outer peripheral side of the target body, respectivelyMore than 0.5mm deepA concave dust suppression portion is formed.
[0015]
The present inventors have observed and examined in detail the reattachment deposited and deposited in the gap between the outer periphery of the target main body and the target pressing jig described above. As a result, the target main body is caused by thermal expansion during sputtering. It was found that rubbing occurred between the presser jig and the holding jig, and the reattachment accumulated in the gap was peeled off or dropped due to vibration or impact at that time.
[0016]
Therefore, in the first sputtering target of the present invention, a concave dust suppression portion is provided on the step surface of the step portion provided on the portion where the target main body contacts the target pressing jig, that is, the outer peripheral portion of the target main body. ing. By this recess (dust suppression part), the degree of rubbing caused by the difference in thermal expansion between the target body and the target holding jig is alleviated, and the reattachment accumulated in the gap between the target body and the holding jig is peeled off and dropped off. Therefore, it is possible to greatly suppress the generation of dust due to the separation and dropping of the reattachment.
[0017]
In the second sputtering target, a concave dust suppressing portion is provided on the step surface of the stepped portion provided on the outer peripheral portion of the target body. The stepped surface of the stepped portion may be rubbed depending on the clearance with the target pressing jig in the latter stage of sputtering (near the target life). Therefore, by providing a concave dust suppression portion on the stepped surface of the stepped portion, it is possible to suppress separation and removal of the reattachment, and the reattachment that has accumulated in the gap between the target body and the holding jig can be suppressed. It is possible to suppress the generation of dust due to peeling and dropping.
[0018]
In the third sputtering target of the present invention, concave dust suppression portions are respectively formed on the step surface and the step surface of the step portion provided on the outer peripheral portion of the target main body described above. It is possible to further suppress the generation of dust due to peeling and dropping off of the reattachment accumulated in the gap with the jig.
[0019]
  The sputtering apparatus of the present invention,In the sputtering apparatus comprising: a vacuum vessel; a film formation sample holding unit disposed in the vacuum vessel; and a target unit disposed in the vacuum container so as to face the film formation sample holding unit. The target portion is characterized by having the above-described sputtering target of the present invention.
  The thin film of the present inventionManufacturing methodUsing the sputtering target of the present invention,Form a thin filmComprising the step ofIt is characterized by.
[0020]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, modes for carrying out the present invention will be described.
[0021]
First, an embodiment of the first sputtering target of the present invention will be described with reference to FIG. 1 and FIG. FIG. 1 is a cross-sectional view showing a schematic structure of a sputtering target according to the first embodiment of the present invention, and FIG. 2 is an enlarged cross-sectional view showing an essential part thereof. In these drawings, reference numeral 11 denotes a disk-shaped target body made of film forming materials such as various metal materials and compound materials. This target body 11 is supported by a backing plate 12.
[0022]
The constituent material of the target body 11 is not particularly limited, and various simple metal materials, alloy materials, metal compound materials, and the like are used depending on the purpose of use of the sputtering target. Specific examples of the constituent material of the target body 11 include Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Pt, Ag, Ir, Ru, Ni, Co, Al, Cu, Si, Ge, Examples thereof include a single element of a metal element selected from Co and Fe, or an alloy or compound containing the above metal element.
[0023]
The backing plate 12 is a support member for the target main body 11 and has a function as a cooling member for suppressing a temperature rise of the target main body 11 due to ion bombardment (sputtering heat). For this reason, for example, oxygen-free copper or Al alloy having high thermal conductivity is used as a constituent material of the backing plate 12, and a cooling pipe (not shown) is incorporated in the backing plate 12.
[0024]
A stepped portion 13 is provided on the upper surface side of the outer peripheral portion of the target main body 11. The stepped portion 13 forms a step by connecting the stepped surface 13a provided at a position one step below the upper surface (sputtered surface) 11a of the target body 11 and the stepped surface 13a and the sputtered surface 11a. It is comprised by the level | step difference surface 13b. The step surface 13 a of the stepped portion 13 is held by the target pressing jig 14.
[0025]
That is, a target holding jig 14 made of a ring member having an inverted L-shaped cross section is disposed outside the outer peripheral portion of the target main body 11. The ring member constituting the target pressing jig 14 has an inner diameter with a margin with respect to the outer diameter of the target main body 11. Such a target pressing jig 14 is installed so as to press the step surface 13 a of the stepped portion 13 of the target main body 11 from the upper side after the target main body 11 is arranged on the backing plate 12. The target pressing jig 14 is fixed to the backing plate 12 by screws or the like, for example.
[0026]
As described above, the target body 11 is fixed on the backing plate 12 by the target pressing jig 14. Further, the target main body 11 and the backing plate 12 may be integrated using a target fixing jig in the center of the target, for example. Alternatively, the target main body 11 and the backing plate 12 may be bonded, and as a bonding method at this time, for example, brazing or diffusion bonding (solid phase bonding) is used.
[0027]
The gap 15 between the stepped surface 13b of the target main body 11 and the inner peripheral surface of the target pressing jig 14 only needs to have a clearance that does not cause a problem when the target pressing jig 14 is installed. Is about 1.5mm or less. A sputtering target 16 is constituted by these components.
[0028]
In the sputtering target 16 of this embodiment, a concave dust suppressing portion 17 is provided on the step surface 13 a of the stepped portion 13, which is a portion where the target main body 11 is in contact with the target pressing jig 14. Specifically, a concave groove continuous in the circumferential direction is formed as the dust suppressing portion 17 on the inner peripheral side of the step surface 13 a of the stepped portion 13. In addition, the recessed part as the dust suppression part 17 does not necessarily need to be a groove | channel continuous in the circumferential direction, and may be a recessed part formed intermittently in the circumferential direction.
[0029]
The concave portion as the dust suppressing portion 17 has a width at the outer peripheral portion of the step surface 13a that does not cause a problem in mechanical reliability when holding the step surface 13a of the step portion 13 with the target pressing jig 14. It is formed from the boundary between the step surface 13a and the step surface 13b to the vicinity of the outer peripheral portion so as to remain. The depth of the concave portion as the dust suppressing portion 17 is preferably 0.5 mm or more. Further, the width remaining on the outer peripheral portion side of the step surface 13a depends on the width of the cross section 13a (the width in the diameter direction of the target body 11), but about 1 mm is sufficient.
[0030]
As described above, by providing the concave portion (dust suppressing portion) 17 on the step surface 13a of the stepped portion 13 which is a contact portion of the target main body 11 with the target pressing jig 14, the target main body 11 and the target pressing jig are provided. The contact area with 14 is reduced. As a result, the degree of rubbing caused by the difference in thermal expansion between the target main body 11 and the target pressing jig 14 is alleviated, so that the reattachment adhered and deposited in the gap 15 between the target main body 11 and the target pressing jig 14. However, it is possible to suppress peeling and dropping due to vibration and impact caused by the above-mentioned rubbing.
[0031]
Even if the reattachment accumulated in the gap 15 between the target main body 11 and the target pressing jig 14 is peeled off, the concave portion (dust suppressing portion) 17 of the step surface 13a, that is, the target pressing jig 14 The concave portion 17 that is mostly blocked functions as a container for the separated particles that cause dust, and the dropping of the particles is suppressed. As a result, it is possible to greatly suppress the generation of dust due to the separation and dropping of the reattachment accumulated in the gap 15 between the target body 11 and the target pressing jig 14.
[0032]
Here, the depth of the recess provided as the dust suppressing portion 17 on the step surface 13a of the stepped portion 13 is preferably 0.5 mm or more as described above. If the depth of the concave portion 17 is less than 0.5 mm, the friction between the target body 11 and the target pressing jig 14 may not be reliably suppressed. In addition, the function of the particles 17 from which the recesses 17 are peeled is also reduced.
[0033]
Next, an embodiment of the second sputtering target of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view showing the main structure of the sputtering target according to the second embodiment of the present invention. The overall structure of the sputtering target of this embodiment is approximately the same as that shown in FIG.
[0034]
In the sputtering target 18 shown in FIG. 3, a step surface 13 a formed at a position one step lower than the sputtering surface 11 a on the outer peripheral portion of the target main body 11, and the step surface 13 a and the sputtering surface, as in the first embodiment. A stepped portion 13 constituted by a step surface 13b that forms a step by connecting the surface 11a is provided.
[0035]
In the sputtering target 18 of the second embodiment, a concave dust suppressing portion 19 is provided on the step surface 13 b of the stepped portion 13. Specifically, a dust suppression portion 19 that is concave when viewed in the diameter direction of the target body 11 is provided on a step surface 13 b that is parallel to the outer peripheral surface (side surface) of the target body 11. The concave portion as the dust suppressing portion 19 is formed as a groove continuous in the circumferential direction at a position on the step surface 13a side of the step surface 13b.
[0036]
In other words, the concave portion as the dust suppressing portion 19 is formed by scraping the stepped surface 13b in the diameter direction of the target body 11 over the circumferential direction while leaving a part on the sputter surface 11a side. In addition, the recessed part as the dust suppression part 19 does not necessarily need to be a groove | channel continuous in the circumferential direction, and may be a recessed part formed intermittently in the circumferential direction.
[0037]
The concave portion as the dust suppressing portion 19 has a width enough to maintain a clearance between the target main body 11 and the target pressing jig 14 when the stepped portion 13 is held by the target pressing jig 14. It is formed from the boundary between the step surface 13b and the step surface 13a to the vicinity of the upper portion so as to remain on the upper side. The depth of the concave portion as the dust suppressing portion 19 is preferably 0.5 mm or more. The width remaining on the upper side of the stepped surface 13b depends on the width of the cut surface 13b (the width in the height direction of the target body 11), but about 1 mm is sufficient.
[0038]
As described above, by providing the concave portion (dust suppressing portion) 19 on the step surface 13b of the stepped portion 13 that forms the gap 15 serving as the clearance between the target main body 11 and the target pressing jig 14, the latter stage of sputtering (target Rubbing between the target main body 11 and the target pressing jig 14 in the vicinity of the life can be suppressed. Moreover, since the recessed part (dust suppression part) 19 functions also as a storage part of a reattachment thing, it can suppress that a reattachment thing peels and falls. As a result, it is possible to greatly suppress the generation of dust due to the separation and dropping of the reattachment accumulated in the gap 15 between the target body 11 and the target pressing jig 14.
[0039]
As described above, the depth of the concave portion provided as the dust suppressing portion 19 on the step surface 13b of the stepped portion 13 is preferably 0.5 mm or more. If the depth of the concave portion 19 is less than 0.5 mm, the friction between the target main body 11 and the target pressing jig 14 may not be reliably suppressed. Further, the function of the recessed portion 19 as a reattachment storage portion is also reduced.
[0040]
Next, an embodiment of the third sputtering target of the present invention will be described with reference to FIG. FIG. 4 is a sectional view showing the main structure of the sputtering target according to the third embodiment of the present invention. The overall structure of the sputtering target of this embodiment is approximately the same as that shown in FIG.
[0041]
In the sputtering target 20 shown in FIG. 4, similarly to the first and second embodiments, a step surface 13 a formed at a position one step lower than the sputtering surface 11 a is formed on the outer periphery of the target body 11, and this step surface. There is provided a stepped portion 13 constituted by a step surface 13b that forms a step by connecting 13a and the sputter surface 11a.
[0042]
In the sputtering target 20 of the third embodiment, a concave first dust suppressing portion 17 is provided on the step surface 13 a of the stepped portion 13, and a concave second surface is formed on the step surface 13 b of the stepped portion 13. The dust suppression unit 19 is provided. Specific shapes and the like of the first and second dust suppressing portions (recess portions) 17 and 19 are the same as those of the first and second embodiments described above.
[0043]
Thus, while providing the 1st recessed part (dust control part) 17 in the step surface 13a of the step-shaped part 13 which is a contact part with the target presser jig | tool 14 of the target main body 11, the target main body 11 and the target presser treatment are carried out. By providing a second concave portion (dust suppression portion) 19 on the step surface 13b of the stepped portion 13 that forms a gap 15 that becomes a clearance with the tool 14, the reattachment caused by the step surface 13a and the step surface 13b Can be prevented from peeling off or falling off. Accordingly, it is possible to further effectively suppress the generation of dust due to the separation and dropping of the reattachment accumulated in the gap 15 between the target main body 11 and the target pressing jig 14.
[0044]
Next, an embodiment of the sputtering apparatus of the present invention will be described. FIG. 5 is a diagram showing a schematic configuration of an embodiment of the sputtering apparatus of the present invention. In the figure, reference numeral 21 denotes a sputtering target having a target body 11 fixed to a backing plate 12 by a target pressing jig 14, and each of the sputtering targets 16, 18, according to the first, second and third embodiments described above. One of the 20 configurations is provided.
[0045]
An earth shield 22 is provided below the outer peripheral portion of the sputtering target 21 serving as the film forming source, and an upper deposition plate 23 and a lower deposition plate 24 are further disposed below the ground shield 22. The substrate 25 which is a film formation sample is held by a platen ring 26 which is a film formation sample holder so as to face the sputtering target 21. These are arranged in a vacuum vessel (not shown). A gas supply system (not shown) for introducing sputtering gas into the vacuum vessel and an exhaust system (see FIG. 2) for exhausting the inside of the vacuum vessel to a predetermined vacuum state. (Not shown).
[0046]
In the above-described sputtering apparatus, the sputtering target 21 has a mechanism that suppresses peeling and dropping of the reattachment deposited in the gap 15 between the target main body 11 and the target pressing jig 14. Accordingly, it is possible to significantly suppress the amount of dust generated due to the separation and dropping of the reattachment, and further the amount of contamination into the film formed on the substrate 25.
[0047]
According to such a sputtering apparatus, a wiring film of a highly integrated semiconductor element such as 64M, 256M, or 1G, that is, a wiring film that forms a narrow and high-density wiring network such that the wiring width is 0.2 μm or less. Even so, since dust contamination is greatly suppressed, the occurrence of wiring defects can be greatly reduced. Such an effect is effective not only in the production of a semiconductor element but also in the production of other electronic components such as a liquid crystal display element.
[0048]
【Example】
Next, specific examples of the present invention will be described.
[0049]
Example 1
First, a 5N purity Ti disk serving as a Ti target (target body) and an Al alloy (6061) plate serving as a backing plate were prepared. These were machined into the desired target shape and backing plate shape.
[0050]
Specifically, the Ti target had an outer diameter of 250 mm and a thickness of 15 mm, and a stepped portion 13 was provided on the outer peripheral side. As for the shape of the stepped portion 13, the width of the cross section 13a (the width in the diameter direction of the target main body 11) was 3 mm, and the width of the cut surface 13b (the width in the thickness direction of the target main body 11) was 3 mm. Then, as shown in FIG. 2, a concave portion having a depth of 0.5 mm was continuously formed in the circumferential direction, leaving a surface having a width of 1 mm on the outer peripheral side of the cross section 13 a, thereby forming the dust suppressing portion 17. The backing plate had an outer diameter of 300 mm. These Ti target and backing plate were fixed by a target fixing jig (not shown) at the center of the target.
[0051]
Next, using an SUS ring with an outer diameter of 300 mm × inner diameter of 246 mm and an inverted L-shaped cross section as a target holding jig, it is installed so as to hold the stepped part on the outer periphery of the Ti target, and integrated Ti sputtering A target was produced. This Ti sputtering target was subjected to a film formation test described later.
[0052]
Example 2
A Ti disk having a purity of 5N serving as a Ti target (target body) and an Al alloy (6061) plate serving as a backing plate were diffusion-bonded by hot pressing. These were machined to the desired target shape and backing plate shape.
[0053]
Specifically, the Ti target had an outer diameter of 250 mm and a thickness of 15 mm, and a stepped portion 13 was provided on the outer peripheral side. As for the shape of the stepped portion 13, the width of the cross section 13a (the width in the diameter direction of the target main body 11) was 3 mm, and the width of the cut surface 13b (the width in the thickness direction of the target main body 11) was 3 mm. Then, as shown in FIG. 3, a concave portion having a depth of 0.5 mm was continuously formed in the circumferential direction, leaving a surface having a width of 1 mm on the upper side of the cut-off surface 13 b, thereby forming the dust suppressing portion 19. The backing plate had an outer diameter of 300 mm.
[0054]
Next, using an SUS ring with an outer diameter of 300 mm × inner diameter of 246 mm and an inverted L-shaped cross section as a target holding jig, it is installed so as to hold the stepped part on the outer periphery of the Ti target, and integrated Ti sputtering A target was produced. This Ti sputtering target was subjected to a film formation test described later.
[0055]
Example 3
A Ti disk having a purity of 5N serving as a Ti target (target body) and an Al alloy (6061) plate serving as a backing plate were diffusion-bonded by hot pressing. These were machined to the desired target shape and backing plate shape.
[0056]
Specifically, the Ti target had an outer diameter of 250 mm and a thickness of 15 mm, and a stepped portion 13 was provided on the outer peripheral side. As for the shape of the stepped portion 13, the width of the cross section 13a (the width in the diameter direction of the target main body 11) was 3 mm, and the width of the cut surface 13b (the width in the thickness direction of the target main body 11) was 3 mm.
[0057]
Then, as shown in FIG. 4, a first concave portion having a depth of 0.5 mm is formed continuously in the circumferential direction, leaving a surface having a width of 1 mm on the outer peripheral side of the cross section 13a. It was set to 17. Further, a second concave portion having a depth of 0.5 mm was continuously formed in the circumferential direction, leaving a surface having a width of 1 mm on the upper side of the cut surface 13 b, thereby forming the second dust suppressing portion 19. The backing plate had an outer diameter of 300 mm.
[0058]
Next, using an SUS ring with an outer diameter of 300 mm × inner diameter of 246 mm and an inverted L-shaped cross section as a target holding jig, it is installed so as to hold the stepped part on the outer periphery of the Ti target, and integrated Ti sputtering A target was produced. This Ti sputtering target was subjected to a film formation test described later.
[0059]
Comparative Example 1
An integrated Ti sputtering target having the same configuration as that of Example 1 was prepared except that a concave portion as a dust suppressing portion was not formed in the stepped portion of the Ti target. This Ti sputtering target was also subjected to a film formation test described later.
[0060]
Using the Ti sputtering targets according to Examples 1 to 3 and Comparative Example 1 described above, magnetron sputtering was performed under the conditions of sputtering pressure 4 × 10 −1 Pa, sputtering current 5 A, Ar flow rate 15 sccm, N 2 flow rate 30 sccm, and 6 inches. A Ti thin film was formed on a Si wafer. The number of dust (particles) of 0.2 μm or more on each Ti thin film after 100 lots, 150 lots, and 200 lots was measured with a particle counter. The measurement results are shown in Table 1.
[0061]
[Table 1]

As is apparent from Table 1, according to the sputtering targets according to Examples 1 to 3, the amount of dust generated is reduced as compared with Comparative Example 1. In particular, it can be seen that the amount of dust generated near the target life is greatly reduced.
[0062]
【The invention's effect】
As described above, according to the sputtering target of the present invention, the reattachment deposited in the gap between the target main body and the target holding jig is prevented from being detached and removed. The generation of dust based on can be effectively suppressed. Therefore, according to the sputtering apparatus of the present invention using such a sputtering target, it is possible to suppress the dust from being mixed into the film that causes a defect such as a wiring film.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view showing a schematic structure of a sputtering target according to a first embodiment of the present invention.
2 is an enlarged cross-sectional view showing a main part of the sputtering target shown in FIG.
FIG. 3 is a cross-sectional view showing a main structure of a sputtering target according to a second embodiment of the present invention.
FIG. 4 is a cross-sectional view showing the main structure of a sputtering target according to a third embodiment of the present invention.
FIG. 5 is a diagram showing a schematic configuration of a sputtering apparatus according to an embodiment of the present invention.
FIG. 6 is a cross-sectional view showing a schematic structure of a conventional typical sputtering target.
7 is an enlarged cross-sectional view showing a main part of the sputtering target shown in FIG.
[Explanation of symbols]
11 …… Target body
12 …… Backing plate
13 …… Stepped part
13a ... cross section
13b ... Step surface
14 …… Target holding jig
16, 18, 20 ... sputtering target
17, 19 ...... Concavity (dust control part)

Claims (9)

A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In a sputtering target comprising a target holding jig,
A sputtering target, wherein a concave dust suppression portion having a depth of 0.5 mm or more is formed on a step surface of the step portion provided on the outer peripheral side of the target body. A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In a sputtering target comprising a target holding jig,
A sputtering target, wherein a concave dust suppression portion having a depth of 0.5 mm or more is formed on a step surface of the step portion provided on the outer peripheral side of the target body. A target body having a stepped portion on the outer peripheral side, a backing plate for supporting the lower surface side of the target main body, and an outer peripheral portion outside the target main body, and holding the stepped surface of the stepped portion of the target main body In a sputtering target comprising a target holding jig,
A sputtering target, wherein a concave dust suppression portion having a depth of 0.5 mm or more is formed on each of the step surface and the step surface of the step portion provided on the outer peripheral side of the target body. In the sputtering target according to any one of claims 1 to 3 ,
The target body is a metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Pt, Ag, Ir, Ru, Ni, Co, Al, Cu, Si, Ge, Co and Fe. A sputtering target comprising a single element or an alloy or compound containing the metal element. In a sputtering apparatus comprising: a vacuum container; a film formation sample holding unit disposed in the vacuum container; and a target unit disposed in the vacuum container so as to face the film formation sample holding unit.
The said target part has the sputtering target of any one of Claim 1 thru | or 4 , The sputtering device characterized by the above-mentioned. A method for producing a thin film, comprising the step of forming a thin film using the sputtering target according to any one of claims 1 to 4 . In the manufacturing method of the thin film of Claim 6 ,
The method for producing a thin film, wherein the thin film is a wiring film, an electrode, or a barrier layer of an electronic component . In the manufacturing method of the thin film of Claim 7 ,
The method of manufacturing a thin film, wherein the electronic component is a semiconductor element. In the manufacturing method of the thin film of Claim 7 ,
The method of manufacturing a thin film, wherein the electronic component is a liquid crystal display element.

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