JP4700224B2 - Resist stripping device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
This invention relates registry exfoliation apparatus for removing the resist remaining on the substrate is etched.
[0002]
[Prior art]
For example, in the manufacturing process of a semiconductor device or a liquid crystal display device, there are a film forming process and a photo process for forming a circuit pattern on a substrate such as a semiconductor wafer or a glass substrate. In these processes, after the substrate is subjected to processing such as development and etching, cleaning and drying are repeatedly performed.
[0003]
Since the resist remains attached to the etched substrate, the resist must be removed before the substrate is cleaned. As a method for stripping the resist, since the resist is usually organic, a wet method using a stripping solution containing an amine-based organic substance is mainly used.
[0004]
On the other hand, as a method for etching a substrate, there are wet etching using an etching solution and dry etching performed by converting an active gas into plasma, and recently, dry etching which is excellent in terms of cost and environment is frequently used. There is a tendency.
[0005]
[Problems to be solved by the invention]
The stripping solution containing amine-based organics is very expensive, so it is collected and used repeatedly. However, the stripping solution remaining on the substrate is mixed with the rinsing solution and exhaust in the subsequent process and discharged from the factory. It is inevitable that the recovery rate is lowered.
[0006]
For this reason, when a stripping solution is used for stripping the resist, not only the cost may increase, but there is a possibility that environmental problems may occur due to being discharged from the factory.
[0007]
The present invention, without using a stripping solution containing an organic substance of amine to provide a registry exfoliation apparatus that the resist to adhere remaining etching processed substrate can be reliably removed.
[0009]
[Means for Solving the Problems]
The present invention provides a resist stripping apparatus for removing a resist remaining on a substrate after dry etching.
A transfer means for transferring a dry-etched substrate;
Dry ashing means for dry ashing the resist remaining on the substrate conveyed by the conveying means;
Comprising a wet stripping means for stripping the resist remaining on the substrate stripped by the dry ashing means with ozone water excited by ultraviolet rays ;
The wet stripping means is
A cylindrical container;
A supply unit that is provided at one axial end of the container and supplies ozone water into the container;
An ultraviolet lamp that is concentrically housed in the container and emits ultraviolet light of a predetermined wavelength to excite the ozone water to generate active oxygen;
A slit for supplying ozone water excited by the ultraviolet lamp along a width direction that intersects a transport direction of the substrate that is formed along the axial direction and is transported by the transport means on the peripheral wall of the container; The feature is in the resist stripping apparatus.
[0013]
According to the present invention, after dry etching the substrate, dry ashing causes the resist applied to the substrate to change due to the influence of heat or the like due to dry processing, but it remains easily. The resist that could not be removed by dry ashing can be reliably removed.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described below with reference to the drawings.
[0015]
A resist stripping apparatus 1 of the present invention shown in FIG. 1 has a dry ashing apparatus 2 and a wet stripping apparatus 3. The dry ashing apparatus 2 carries a substrate 5 (shown in FIG. 2) that has been etched by the dry etching apparatus 4 in the previous process. The substrate 5 conveyed to the dry ashing apparatus 2 is provided with a resist serving as a mask at the time of dry etching on the plate surface.
[0016]
As the dry etching apparatus 4, a plasma etching apparatus using active species generated by reactive gas plasma is used. As the dry ashing apparatus 2, a plasma stripping apparatus that generates a reactive gas plasma and removes the resist using active species contained in the plasma is used, as in the etching apparatus.
[0017]
When the dry-etched substrate 5 is peeled off by the dry ashing device 2, the resist remaining on the substrate 5 is removed. However, since the substrate 5 has undergone a dry etching process and a dry ashing process, the resist is completely removed in the dry ashing process under the influence of the heat affected by these processes and the reactive gas used in each dry process. Instead, it may remain as a film.
[0018]
In order to remove the resist 6 (shown in FIG. 2) remaining on the substrate 5 in the stripping step, the substrate 5 stripped by the dry ashing device 3 is carried into the wet stripping device 3, where the substrate 5 is made using active oxygen. The remaining resist 6 is removed. Ozone water is used to generate active oxygen.
[0019]
As shown in FIGS. 2 and 3, the ozone water is supplied into a cylindrical container 11 from a supply pipe 12 serving as a supply unit connected to the one end face. In the container 11, an ultraviolet lamp 13 that irradiates the ozone water supplied in the container 11 with ultraviolet rays having a predetermined wavelength is concentrically accommodated. The ultraviolet lamp 13 has a peak wavelength of 172 nm (nanometer), for example. Thereby, ozone contained in the ozone water is decomposed to generate oxygen and active oxygen.
[0020]
Ozone water containing active oxygen is ejected toward the substrate 5 as shown by an arrow from a slit 14 as an outflow portion formed along the axial direction on the peripheral wall of the container 11. The slit 14 is formed to be slightly longer than the width dimension of the substrate 5, and the substrate 5 is conveyed in a predetermined direction by a conveying means including a conveying roller 15. As a result, ozone water containing active oxygen is supplied to the entire upper surface of the substrate 5, so that the wet peeling is performed by the ozone water containing active oxygen.
[0021]
The ozone concentration of ozone water generated in the container 11 is 20 to 80 ppm at room temperature, preferably 30 ppm or more, and the concentration should be as high as possible. By increasing the ozone concentration of ozone water, it is possible to increase the amount of active oxygen generated by exciting ozone water with ultraviolet rays. As a result, the resist residue that could not be removed by the dry ashing process can be efficiently decomposed and removed by the strong oxidizing action of active oxygen.
[0022]
As described above, the resist 6 provided on the substrate 5 is first removed by dry ashing, and then the altered resist remaining on the substrate 5 is removed by wet peeling, so that the resist is reliably removed from the substrate 5. It becomes possible.
[0023]
Although the final process of peeling is a wet method, it does not use a stripping solution containing amine-based organic substances as in the past, but uses ozone water, and the oxygen contained in this ozone water is changed to active oxygen, thereby achieving a peeling effect. It is improving.
[0024]
Active oxygen disappears in a short time, and ozone contained in ozone water is converted into oxygen and active oxygen. Therefore, ozone water discharged from the container 11 is almost harmless, and ozone water is inexpensive. Therefore, unlike the case of using a stripping solution containing an amine-based organic substance, there is no risk of causing environmental problems, and it is advantageous in terms of cost.
[0025]
The wet peeling apparatus 3 has a double tube structure in which an ultraviolet lamp 13 is accommodated in a cylindrical container 11. Therefore, not only the entire apparatus can be made compact, but also the ultraviolet light output from the ultraviolet lamp 13 can be efficiently irradiated to the ozone water flowing in the container 11, which also generates active oxygen. Efficiency can be increased.
[0026]
In addition, by exciting ozone water with ultraviolet light having a wavelength of 172 nm, it becomes possible to efficiently generate a large amount of active oxygen in accordance with the ozone concentration contained in the ozone water, so that the peeling effect can be improved.
[0027]
The ultraviolet lamp 13 may output ultraviolet light having two peak wavelengths of 185 nm and 254 nm instead of the peak wavelength of 172 nm. In that case, oxygen absorbs ultraviolet rays of 185 nm to become ozone, and further, active oxygen is generated by irradiating ozone with ultraviolet rays having a wavelength of 254 nm.
[0028]
【The invention's effect】
As described above, according to the present invention, the resist applied to the substrate is likely to remain by dry ashing after dry etching of the substrate, so that the resist is likely to remain due to the influence of heat or the like by dry processing. By peeling, the resist that could not be removed by dry ashing can be surely removed.
[0029]
Moreover, since it is not necessary to use an expensive stripping solution containing an amine-based organic substance as in the prior art, this is advantageous in terms of cost and hardly causes environmental problems.
[Brief description of the drawings]
FIG. 1 is a schematic configuration diagram of an entire apparatus showing an embodiment of the present invention.
FIG. 2 is a side view showing a configuration of a wet peeling apparatus.
FIG. 3 is a partially sectioned front view showing the configuration of the wet peeling apparatus.
[Explanation of symbols]
2 ... Dry ashing device 3 ... Wet peeling device 5 ... Substrate 11 ... Container 12 ... Supply pipe (supply unit)
13 ... UV lamp 14 ... Slit (outflow part)

Claims (1)

In a resist stripping apparatus that removes the resist remaining on the substrate after dry etching,
A transfer means for transferring a dry-etched substrate;
Dry ashing means for dry ashing the resist remaining on the substrate conveyed by the conveying means;
Comprising a wet stripping means for stripping the resist remaining on the substrate stripped by the dry ashing means with ozone water excited by ultraviolet rays ;
The wet stripping means is
A cylindrical container;
A supply unit that is provided at one axial end of the container and supplies ozone water into the container;
An ultraviolet lamp that is concentrically housed in the container and emits ultraviolet light of a predetermined wavelength to excite the ozone water to generate active oxygen;
A slit for supplying ozone water excited by the ultraviolet lamp along a width direction that intersects a transport direction of the substrate that is formed along the axial direction and is transported by the transport means on the peripheral wall of the container; A resist stripping apparatus.

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