JP4704702B2 - Blanking aperture array and manufacturing method thereof - Google Patents

Description

  The present invention relates to a charged particle beam exposure apparatus such as an electron beam exposure apparatus or an ion beam exposure apparatus mainly used for exposure of a semiconductor integrated circuit, and more particularly to a charged particle beam that performs pattern drawing using a plurality of charged particle beams. The present invention relates to a deflector of an exposure apparatus and a method of manufacturing the deflector.

  As a multi-charged particle beam exposure apparatus using a plurality of charged particle beams, for example, an apparatus using a blanking aperture array having a large number of apertures is known (see, for example, Patent Document 1 or Non-Patent Document 1). In this Patent Document 1, a blanking aperture array is formed by using a semiconductor crystal such as silicon as a substrate, and forming a plurality of holes in a two-dimensional arrangement at predetermined intervals, and a pair of blanks on both sides of each hole. Ranking electrodes are formed, and whether or not to apply a voltage between the blanking electrodes is controlled by pattern data. For example, when one electrode in each aperture is grounded and a voltage is applied to the other electrode, the electron beam passing through the aperture is bent, so that the single aperture aperture is passed after passing through the lens installed in the lower portion. The electron beam does not reach the sample surface (resist layer on the semiconductor substrate). On the other hand, if a voltage is not applied to the other electrode, the electron beam passing therethrough is not bent, so that the electron beam reaches the sample surface without being cut by the aperture after passing through the lens disposed below.

  In Patent Document 2, as a manufacturing method of this blanking aperture array, a plurality of apertures are two-dimensionally formed at a predetermined interval in a semiconductor crystal substrate such as silicon, and a deflection electrode pair is formed around each aperture. Methods of manufacturing by forming are known. Specifically, concave portions corresponding to the electrodes of the blanking aperture array are formed on the surface of the Si substrate, and after forming a deflection electrode in each concave portion by plating, a conductive layer used as a plating base is formed from the substrate surface. After that, an aperture opening for allowing the electron beam to pass through is formed in the Si substrate by wet etching or the like.

As another blanking aperture array manufacturing method, there is a method of forming electrodes by sputtering or vapor deposition after forming blanking apertures in a Si substrate.
Japanese Utility Model Publication No. 56-19402 Japanese Patent Laid-Open No. 7-2970107 Applied Physics 69, 1135 (1994)

However, the conventional blanking aperture array has the following problems.
(1) The manufacturing method is complicated. Therefore, when an attempt is made to increase the number of arrays, it is difficult to produce a large number of blanking aperture arrays with a high yield. In particular, manufacturing defects are liable to occur in electrode formation and electrode-wiring connection portions.
(2) An insulator such as a silicon oxide film is exposed in the vicinity of the deflection electrode. Therefore, when a charged particle beam is irradiated, charge-up occurs, affecting the charged particle beam passing through the aperture, and the charged particle beam is not properly deflected and position controlled, and the pattern is exposed with high accuracy. Can be difficult to do.

An object of the present invention is to provide a blanking aperture array structure and a manufacturing method that are advantageous in terms of yield .

A first aspect of the present invention relates to a blanking aperture array, wherein the blanking aperture array is capable of deflecting a plurality of through holes respectively corresponding to a plurality of charged particle beams and the plurality of charged particle beams. A plurality of electrodes provided in two pairs for each of the plurality of through-holes; and a wiring for applying a potential to each of the plurality of electrodes, wherein at least one through-hole of the plurality of through-holes A wiring for applying a potential to each of the pair of electrodes provided to the hole is cut, and the pair of electrodes are grounded.
A second aspect of the present invention relates to a manufacturing method for manufacturing a blanking aperture array, and the manufacturing method is capable of deflecting a plurality of charged particle beams, and a plurality of charged particle beams respectively corresponding to the plurality of charged particle beams. Forming a through hole and two pairs of electrodes for each of the plurality of through holes; forming a wiring for applying a potential to each of the plurality of electrodes; and Of these, a step of selecting electrodes that do not function normally, a step of cutting a wiring for applying a potential to each of the pair of electrodes that does not function normally among the two pairs, and a step of grounding each of the pair of electrodes It is characterized by including these.

According to the present invention, it is possible to provide a blanking aperture array structure and a manufacturing method which are advantageous in terms of yield .

The embodiments of the present invention are listed below.
[Embodiment 1]
A deflector for deflecting a charged particle beam, the deflector comprising a through-hole formed in a substrate, a first electrode pair disposed opposite to a side wall of the through-hole, and the first electrode pair And a second electrode pair disposed on a side wall surface substantially perpendicular to the first electrode, and the four electrodes have substantially the same shape.

  As in the above configuration, if one deflector has two pairs of electrodes having substantially the same shape, if any one of the electrodes fails for some reason, an electrode pair that does not include the defective electrode By using it, the entire blanking aperture array is not disabled and the yield is improved.

[Embodiment 2]
The deflector having the two pairs of electrodes having substantially the same shape as described in the first embodiment, and the wiring connected to the electrode for applying the charged particle beam deflection voltage at the time when the wiring formation process is completed, One of the two electrode pairs is connected to one wiring to which the deflection voltage is applied, and the remaining electrode of the two electrode pairs is connected to the other wiring to which the deflection voltage is applied. A deflector characterized by having That is, in the second embodiment, wirings for applying the same charged particle beam deflection voltage are connected to two adjacent electrodes of the four electrodes of the two sets of electrode pairs.

  When a wiring that applies the same charged particle beam deflection voltage is connected to the adjacent electrodes of the four electrodes of the two pairs of electrodes as in the above configuration, if any one of the electrodes is defective In addition, the wiring to the electrode pair including the defective electrode can be cut, and the wiring becomes a compensation circuit, so that the entire blanking aperture array is not usable and the yield is improved.

[Embodiment 3]
In the deflector according to the second embodiment, when completed or in use, one of the wirings connected to the two electrode pairs is connected to a wiring that applies a deflection voltage. And the wiring connected to the other electrode pair is disconnected from the wiring for applying the deflection voltage.

  As in the above configuration, any of the two electrode pairs can be connected to all the electrodes by forming a wiring to apply a control voltage of plus / minus, plus / 0 or 0 / minus, respectively. In the case where a defect occurs in the connection portion with the electrode or wiring, the good wiring of the two electrode pairs is left, and the wiring to the electrode pair including the defective electrode or connection portion is cut. By using this deflector, the blanking aperture array does not become defective, and can be used as a good blanking aperture array, and the yield can be dramatically improved.

[Embodiment 4]
A deflector array in which a plurality of deflectors are arranged, and the deflector remains at the time when the wiring forming process described in the second embodiment is completed and one of the electrode pairs described in the third embodiment. A deflector array characterized in that a deflector in which connected wires are cut is mixed. This deflector array is suitable as a blanking aperture array.

[Embodiment 5]
A method of manufacturing the deflector, comprising: forming four electrodes having substantially the same shape constituting the two pairs of electrodes; and wiring for applying a charged particle beam driving voltage to the four electrodes A step of selecting a good electrode or electrode-wiring connection portion of two pairs of electrodes, and a defective electrode or electrode-wiring connection portion is found to be defective. A step of cutting the wiring to the connecting portion between the electrode or the electrode and the wiring, and a wiring portion connected to the defective electrode or the connecting portion between the electrode and the wiring and closer to each electrode than the cutting portion of the cut wiring, And a step of grounding the wiring.

  As in the above configuration, a step of forming four electrodes having substantially the same shape, a step of forming wiring for applying a voltage to all of the four electrodes, a step of selecting good electrodes, and a defect If there is an electrode or electrode-wiring connection portion, the step of cutting the wiring to the defective electrode or electrode-wiring connection portion, and the wiring in the wiring portion closer to each electrode than the cut portion of the cut wiring The method of manufacturing a deflector capable of preventing the charge-up of the side wall of the through hole and exposing the pattern with high accuracy can be provided. In addition, a manufacturing method with high yield can be provided.

[Embodiment 6]
The step of forming the electrode and the wiring includes an electrode substrate on which four electrodes having substantially the same shape constituting the two sets of electrode pairs, and a wiring for applying a voltage to each electrode pair formed on the electrode substrate. A method of manufacturing a deflector, which is a step of bonding a wiring substrate formed with a substrate.

  A charged particle beam exposure apparatus in which a substrate on which an electrode is formed and a wiring substrate on which a wiring for applying a voltage is applied to each electrode pair formed on the electrode substrate is bonded to each other as in the above configuration. Also in the manufacturing method of the blanking aperture array, by providing the deflector or the manufacturing process on the substrate on which the electrode is formed, the manufacturing process of the blanking aperture array becomes easy, and a manufacturing method with a high yield is provided. I can do it.

Embodiments of the present invention will be described below with reference to the drawings. In the following embodiment, an example of an electron beam exposure apparatus is shown as an example of a charged particle beam. The following embodiments can be applied not only to electron beams but also to exposure apparatuses using charged particle beams.

  As shown in FIG. 1-1 (1), for example, an insulating layer 2 made of a Si nitride film is formed on both the front and back surfaces of a substrate 1 made of a Si wafer having a thickness of 4 ″ φ and a thickness of 200 μm using a plasma CVD method. Is formed to a thickness of about 1 μm.

  Next, as shown in FIG. 1-1 (2), a resist 3 is coated on the insulating layer 2, exposed and developed, and portions other than the region corresponding to the groove 4 in FIG. 1-1 (3) are formed. cover. Using the resist 3 as an etching mask, the insulating layer 2 is removed by, for example, reactive ion etching (RIE). The groove 4 is a portion corresponding to the electrode 8 in FIGS. 1-2 (7) to 1-3 (13) and FIG. 2, as will be apparent later.

  Next, as shown in FIG. 1-1 (3), the Si wafer substrate 1 is processed by an inductively coupled plasma (ICP) -RIE method using the resist 3 and the insulating layer 2 as an etching mask. A plurality of pairs (four) of grooves 4 are formed. At this time, the Si nitride insulating layer 2 disposed on the back surface of the substrate 1 serves as an etching stopper layer when the substrate 1 is etched. In addition, it becomes a layer for electrically insulating the conductive layer 6 and the substrate 1 described later.

  Next, as shown in FIG. 1-1 (4), after removing the resist 3, the substrate 1 is oxidized by a thermal oxidation method so that the side walls of the two pairs of grooves 4 of the same shape on the substrate 1 are formed. For example, the insulating layer 5 made of a Si oxide film having a thickness of 2 μm is formed. This insulating layer 5 is formed in order to electrically insulate a conductive material 8 and a substrate 1 described later.

  Next, as shown in FIG. 1-1 (5), a Cr film, a Pt film, and a Cr film are formed on the back surface of the substrate 1 by, for example, an EB vapor deposition method, and the conductive layer 6 is formed. At this time, the respective film thicknesses of the conductive layer 6 which is a Cr / Pt / Cr laminated film were Cr film 500 mm, Pt film 2000 mm, and Cr film 500 mm. Furthermore, an insulating layer 7 made of a Si oxide film was formed on the conductive layer 6 by a plasma CVD method or the like to a thickness of about 1 μm.

  Next, as shown in FIG. 1-2 (6), only the insulating layer 2 on the surface side of the substrate 1 and the insulating layer 2 (Si nitride film) positioned at the bottom of the two pairs of grooves 4 having the same shape are, for example, RIE. By the method, the conductive layer 6 is selectively removed by etching until the conductive layer 6 appears at the bottom of the two pairs of grooves 4 having the same shape. That is, the insulating layer 5 (Si oxide film) located on the side walls of the two pairs of grooves 4 having the same shape is not removed. As a result, a number of grooves in which the conductive layer 6 is exposed are formed at a predetermined interval at the bottom of the groove 4. As another method, the insulating layer 5 on the surface side of the substrate 1 and the same shape are not removed by wet etching using hot phosphoric acid without removing the insulating layer 5 located on the side walls of the two pairs of grooves 4 having the same shape. It is also possible to remove only the insulating layer 2 located at the bottom of the two pairs of grooves 4.

Next, as shown in FIG. 1-2 (7), the conductive layer 6 exposed at the bottoms of the two pairs of grooves 4 having the same shape is used as an electrode for plating (seed layer) by electrolytic plating. The two pairs of grooves 4 are selectively plated, and filled with conductive materials 8 and 8 'made of gold. In other words, the conductive material 8 can be selectively grown in the two pairs of grooves 4 having the same shape. At this time, the insulating layer 7 on the back surface of the substrate 1 functions as a protective layer for preventing the conductive layer 6 other than the groove 4 from being plated. After embedding the conductive material 8 in the groove 4, unnecessary portions (for example, raised from the surface of the substrate 1) of the conductive materials 8, 8 ′ are polished by, for example, a chemical mechanical polishing method (CMP) method. Remove. Further, a Cr film may be formed on the surface of the insulating layer 5 by sputtering for the purpose of improving the adhesion between the insulating layer 5 made of Si oxide and the conductive materials 8 and 8 'made of gold before gold plating. good. In addition to gold, copper may be used as the plating material. Thus, two pairs of electrodes having the same shape are formed.

  Next, as shown in FIG. 1-2 (8), the conductive layer 6 and the insulating layer 7 located on the back surface of the substrate 1 are etched away by RIE or the like.

  Next, an insulating layer 9 made of a Si oxide film is formed on the surface side of the substrate 1 by a plasma CVD method or the like to a thickness of about 1 μm, and a resist is applied on the insulating layer 9 and exposed and developed. Covering a portion other than the region corresponding to the groove. Using this resist as an etching mask, the insulating layer 9 is removed by, for example, reactive ion etching (RIE) as shown in FIG. Further, after removing the resist, a wiring layer 10 made of gold is deposited on the entire surface of the insulating layer 9 by sputtering.

  Next, a photoresist is applied on the wiring layer 10 and exposed and developed. Using this resist as an etching mask, the wiring layer 10 is removed by, for example, reactive ion etching (RIE) as shown in FIG.

  Next, as shown in FIG. 1-3 (11), an insulating layer 11 made of a Si oxide film is formed on the surface side of the substrate 1 by a plasma CVD method or the like to a thickness of about 1 μm. A conductive layer 12 made of gold is deposited on the entire surface 11 by sputtering. The conductive layer 12 functions as a charge-up preventing metal layer and is grounded.

  Next, a resist 13 is applied on the conductive layer 12, exposed and developed to cover the outside of the region corresponding to the opening to be formed in the substrate portion between two pairs of grooves of the same shape. Using this resist as an etching mask, as shown in FIG. 1-3 (12), the conductive layer 12 is etched by, for example, ion milling, and then the insulating layers 11 and 9 are formed by reactive ion etching (RIE). Etch. Furthermore, after the substrate 1 is etched by ICP-RIE, the insulating layer (Si nitride film) 2 is removed by reactive ion etching (RIE). As a result, an opening 14 is formed in the substrate portion between the sidewall insulating films by two pairs of grooves having the same shape. At this time, the insulating layer 2 becomes an etching stopper layer when the substrate 1 is etched.

Next, as shown in FIG. 1-3 (13), the insulating layer 5 made of the Si oxide film on the side wall of the opening 14 is removed by wet etching using a mixed solution of HF and NH ₄ F. The blanking aperture array (BAA) is completed when the insulating layer 2 made of the Si nitride film located at the bottom of the opening 14 is removed by wet etching using, for example, hot phosphoric acid.

2A and 2B are sectional views of the BAA produced as described above, taken along the line AA ′ of FIG. As shown in the figure, electrodes made of two pairs of conductive materials 8 and 8 'having the same shape are formed. The pair of conductive materials 8 facing each other is a first electrode pair, and the pair of conductive materials 8 'facing each other is a second electrode pair. The direction in which the first electrode pairs 8 face each other is the first direction, and the direction in which the second electrode pairs 8 ′ face each other is the second direction, and both are substantially orthogonal . By adopting such a structure, even if any one of the electrode pairs or any one of the electrodes or wiring and the connection portion between the electrodes is defective, it can be used as a BAA by selectively using a good electrode pair. , BAA yield is improved. Further, since the four walls are covered with the conductive material, it is possible to prevent the opening 14 from being charged up. FIG. 2 (2) shows an example of a structure in which the electrode is less likely to be peeled by the electrode shape. Further, the shape of the opening 14 is not limited to the square shape shown in FIG. In addition, the electrode is formed by forming a blanking aperture square or circular opening on the Si substrate, and then forming a film-like electrode on the side wall of the opening by a film forming means such as vapor deposition, sputtering or CVD. A forming method may be used.

  For comparison, FIG. 3 shows a cross-sectional view of a conventional BAA. As shown in the figure, it consists of a pair of electrodes having the same shape. In such a conventional structure, when a defect occurs in one electrode or an electrode and a wiring connection portion, this blanking aperture cannot be used. Then, the blanking aperture array including this blanking aperture cannot be used as a whole. Further, charge-up is likely to occur at the side wall portion where no electrode is present, and the electron beam is affected, so that accurate exposure cannot be performed. 2 and 3, 15 indicates the axial position of the electron beam.

[Example 2]
FIG. 4 is a schematic diagram for explaining a second embodiment of the blanking aperture array (BAA) of the electron beam exposure apparatus according to the present invention.
FIG. 4 is a schematic diagram showing the configuration of electrodes and wirings of one blanking aperture in the blanking aperture array that has been manufactured in FIG. 1-3 (13). Wirings 103 and 103 ′ for applying an electron beam deflection voltage to the two pairs of electrodes 101 and 101 ′ and 102 and 102 ′ are connected to the respective electrodes. The wiring 103 is the first wiring, and the wiring 103 ′ is the second wiring. For wiring connection, the wiring 103 is connected to the electrodes 101 and 102, and the wiring 103 'is connected to the electrodes 101' and 102 '. When a defect exists in any one of the wirings connected to the two electrodes, one of the wirings becomes a compensation circuit, and the yield of the blanking aperture array is improved.

  When there is no defect in any of the electrodes, the electron beam can be deflected by applying a voltage while being wired to the four electrodes, so that it can be used as a blanking aperture.

[Example 3]
FIG. 5 is a schematic diagram for explaining a third embodiment of the blanking aperture array (BAA) of the electron beam exposure apparatus according to the present invention. 6 shows a BB ′ cross-sectional view of FIG.
In FIG. 5, after the fabrication is completed in FIG. 1-3 (13), a defective electrode 102 is found in a process of selecting a good electrode, and the wiring to the defective electrode or a connection portion between the electrode and the wiring is cut. The schematic diagram shows the electrodes and wiring of one blanking aperture in the blanking aperture array after the process and the step of grounding the wiring at the wiring portion closer to each electrode than the cut portion of the cut wiring. Yes. As shown in the figure, when there is a defective electrode 102, one wiring 103 is connected to two electrodes 101, 102. Therefore, the wiring to the electrode 101 serves as a compensation circuit, and a pair of electrode pairs. Since the (electrodes 101 and 101 ') function normally, it can be used as a blanking aperture array, and a blanking aperture array with improved yield can be provided. Further, as shown in FIG. 6, when a defect such as the void 106 is confirmed inside the electrode 102, the wiring 103 to the electrode 102 is cut. By connecting the cut wiring 103 to the antistatic layer 107 formed on the surface of the blanking aperture array, almost all of the side walls in the openings are covered with a conductive material, so that charge-up can be prevented and accuracy is improved. It is possible to provide a blanking aperture array capable of forming a good pattern.

[Example 4]
FIG. 7 is a flowchart for explaining a fourth embodiment of a method for manufacturing a blanking aperture array (BAA) of an electron beam exposure apparatus according to the present invention.
As shown in FIGS. 1-1 to 1-3, after the basic structure of the blanking aperture array is formed through the electrode or wiring formation process, an inspection process for selecting defective connections between the electrode and the electrode and the wiring is performed. The inspection method may be performed using a microfocus X-ray CT system capable of nondestructive inspection. Subsequently, the wiring connected to the electrode where the defect exists is cut using a focus ion beam apparatus, and then the insulating material, for example, SiO ₂ is deposited using the apparatus to deposit the opening. Block. Further, the same device is used to cut the wiring from the electrode to the wiring, and then the wiring is opened. Then, using the same device, a metal material such as tungsten is coated on the surface of the antistatic layer 12 (FIGS. 1-3 (13)). To make an electrical connection with the antistatic layer. Thus, a blanking aperture array using the compensation circuit is completed.
In addition, when the stage coordinate system of the X-ray CT system and the focus ion beam apparatus are aligned, the manufacturing efficiency is improved.

  By performing the steps as described above, defective electrodes or electrode-wiring connection portions can be selected, and the defective portions can be separated by a compensation circuit, thereby improving productivity. Further, by connecting the defective electrode to the antistatic layer, there can be provided a blanking aperture array manufacturing method capable of forming an accurate pattern without charge-up.

[Example 5]
FIG. 8 is a schematic diagram for explaining a fifth embodiment of a method for manufacturing a blanking aperture array (BAA) of an electron beam exposure apparatus according to the present invention.
A blanking aperture array can be manufactured by separately manufacturing the wiring substrate 201 and the electrode substrate 202 and then bonding the two substrates together. In this method, when an electrode defect is inspected, since there is no wiring on the electrode substrate, the defect electrode selection inspection can be performed with high accuracy, and the yield is improved.

  According to the above embodiment, a highly reliable blanking aperture array or multi-deflector can be provided and manufactured with high productivity.

[Example 6]
Next, an embodiment of a device production method using the electron beam exposure apparatus using the blanking aperture array described above will be described.
FIG. 9 shows a flow of manufacturing a microdevice (a semiconductor chip such as an IC or LSI, a liquid crystal panel, a CCD, a thin film magnetic head, a micromachine, etc.). In step 1 (circuit design), circuit design of a micro device, for example, a semiconductor device is performed. In step 2 (EB data conversion), exposure control data for the exposure apparatus is created based on the designed circuit pattern.

  On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the wafer and the exposure apparatus to which the prepared exposure control data is input. The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer produced in step 4, and is an assembly process (dicing, bonding), packaging process (chip encapsulation), etc. Process. In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. A semiconductor device is completed through these processes, and is shipped in Step 7.

  The wafer process in step 4 includes the following steps. An oxidation step for oxidizing the surface of the wafer, a CVD step for forming an insulating film on the wafer surface, an electrode formation step for forming electrodes on the wafer by vapor deposition, an ion implantation step for implanting ions on the wafer, and applying a photosensitive agent to the wafer The resist processing step, the exposure step for printing and exposing the circuit pattern onto the wafer after the resist processing step by the above-described exposure apparatus, the development step for developing the wafer exposed in the exposure step, and the etching for removing portions other than the resist image developed in the development step Step, resist stripping step to remove resist that is no longer needed after etching. By repeating these steps, multiple circuit patterns are formed on the wafer.

It is a fragmentary sectional view in each manufacturing process from the beginning of BAA concerning the 1st example of the present invention to forming insulating layer 7 into a film. It is a fragmentary sectional view in each manufacturing process following Drawing 1-1 of BAA concerning the 1st example of the present invention. It is a fragmentary sectional view in each manufacturing process until manufacture of BAA is completed following manufacture of BAA concerning a 1st example of the present invention. It is AA 'sectional drawing in FIG. 1-3 (13). It is the conventional BAA cross-section figure. It is a partial schematic diagram of BAA which concerns on 2nd Example of this invention. It is a partial schematic diagram of BAA concerning the 3rd example of the present invention. It is BB 'sectional drawing in FIG. It is a flowchart which shows the manufacturing process of BAA based on 4th Example of this invention. It is a manufacturing process schematic diagram of BAA based on 5th Example of this invention. It is a figure explaining the flow of the manufacturing process of a device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 2 Insulating layer 3 Resist 4 Groove 5 Insulating film 6 Conductive layer 7 Insulating layer dynamic focus coil 8, 8 'Conductive material 9 Insulating layer 10 Wiring layer 11 Insulating layer 12 Conductive layer 13 Resist 101, 101', 102, 102 ' Electrode 103, 103 'wiring 104 contact part 105 wiring cutting part 201 wiring board 202 electrode board

Claims (7)

A blanking aperture array,
A plurality of through holes respectively corresponding to a plurality of charged particle beams;
A plurality of electrodes provided in pairs for each of the plurality of through holes so that the plurality of charged particle beams can be deflected, and
Wiring for applying a potential to each of the plurality of electrodes;
Have
Wirings for applying a potential to the pair of electrodes of the two pairs provided for at least one of the plurality of through holes are cut, and the pair of electrodes are grounded. ing,
Blanking aperture array characterized by that. A conductive layer provided on the surface on which the plurality of charged particle beams are incident and grounded;
The pair of electrodes are electrically connected to the conductive layer.
The blanking aperture array according to claim 1, wherein: A manufacturing method for manufacturing a blanking aperture array ,
Forming a plurality of through holes respectively corresponding to the plurality of charged particle beams and two pairs of a plurality of electrodes for each of the plurality of through holes so that the plurality of charged particle beams can be deflected, respectively. ,
Forming a wiring for applying a potential to each of the plurality of electrodes ;
Selecting an electrode that does not function normally among the plurality of electrodes ;
Cutting the wiring for applying a potential to each of the pair of electrodes including the electrode that does not function normally among the two pairs ;
Grounding each of the pair of electrodes ;
Method for producing a blanking aperture array, which comprises a. An electrode substrate on which the plurality of electrodes are formed, Bed according to claim 3, wherein the wiring for applying a potential to the plurality of electrodes includes a step of laminating a wiring board formed, it is characterized by A manufacturing method of a ranking aperture array . Forming a grounded conductive layer on the surface on which the plurality of charged particle beams are incident;
The step of grounding electrically connects each of the pair of electrodes to the conductive layer;
The manufacturing method of the blanking aperture array according to claim 3 or 4, characterized in that: A charged particle beam exposure apparatus that exposes a substrate using a charged particle beam,
Including a blanking aperture array according to claim 1 or claim 2 ,
A charged particle beam exposure apparatus. A device manufacturing method characterized in that it comprises a step of exposing the board using a charged particle beam exposure apparatus according to claim 6, and a step of developing the substrate exposed in the step.

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