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JP4709864B2 - Thin film substrate for wavelength conversion element and waveguide for wavelength conversion element - Google Patents
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JP4709864B2 - Thin film substrate for wavelength conversion element and waveguide for wavelength conversion element - Google Patents

Thin film substrate for wavelength conversion element and waveguide for wavelength conversion element Download PDF

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JP4709864B2
JP4709864B2 JP2008033870A JP2008033870A JP4709864B2 JP 4709864 B2 JP4709864 B2 JP 4709864B2 JP 2008033870 A JP2008033870 A JP 2008033870A JP 2008033870 A JP2008033870 A JP 2008033870A JP 4709864 B2 JP4709864 B2 JP 4709864B2
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wavelength conversion
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JP2009192848A (en
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信行 近藤
英崇 佐藤
好毅 西田
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NTT Electronics Corp
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Description

本発明は、非線形光学媒質中で生じる差周波発生効果を用いて信号光の波長を別の波長に変換する波長変換素子用薄膜基板及び波長変換素子用導波路に関するものである。   The present invention relates to a wavelength conversion element thin film substrate and a wavelength conversion element waveguide that convert the wavelength of signal light to another wavelength by using a difference frequency generation effect generated in a nonlinear optical medium.

波長変換光源モジュールの作製において、信号光波長および制御光波長の和または差周波数の変換光を作り出すために、波長変換素子用薄膜基板(LiNbO)上に擬似位相整合(QPM:Quasi−Phase Matching)パタンと呼ばれる周期的な分極反転領域を形成する必要がある。分極反転領域の形成方法は、例えば、特許文献1や特許文献2に記載されている。
特開平02−187735号公報 特開2003−140214号公報
In the production of the wavelength conversion light source module, a quasi-phase matching (QPM: Quasi-Phase Matching) is formed on the thin film substrate for wavelength conversion elements (LiNbO 3 ) in order to create a converted light having the sum or difference frequency of the signal light wavelength and the control light wavelength. It is necessary to form a periodic domain-inverted region called a pattern. A method for forming the domain-inverted region is described in, for example, Patent Document 1 and Patent Document 2.
Japanese Patent Laid-Open No. 02-187735 JP 2003-140214 A

図1は、レジストパタンと液体電極を用いた電界印加法で波長変換素子用薄膜基板上に分極反転構造を形成する製法を説明する図である。図1の電界印加法は、基板の厚み方向に予め一様に分極させた波長変換素子用薄膜基板11a上に線分パタンを並列に並べた多数のレジストパタン12をマスクとして形成した後、表面を塩化リチウム水溶液等の液体電極13で浸し、電荷印加手段16で電界を印加してレジストパタン12が存在しない領域の分極を強制的に反転させる。レジストパタン12の配列を調整することによって、波長変換素子用薄膜基板11bの分極の周期性を実現し、波長変換素子用薄膜基板11b上にQPMパタンを形成できる。なお、図1において矢印14は分極の方向を示している。   FIG. 1 is a diagram for explaining a manufacturing method for forming a domain-inverted structure on a wavelength conversion element thin film substrate by an electric field application method using a resist pattern and a liquid electrode. The electric field application method shown in FIG. 1 is formed by forming a large number of resist patterns 12 in which line segment patterns are arranged in parallel on a wavelength conversion element thin film substrate 11a that is uniformly polarized in advance in the thickness direction of the substrate. Is immersed in a liquid electrode 13 such as an aqueous lithium chloride solution, and an electric field is applied by the charge applying means 16 to forcibly invert the polarization in the region where the resist pattern 12 does not exist. By adjusting the arrangement of the resist pattern 12, the polarization periodicity of the wavelength conversion element thin film substrate 11b can be realized, and the QPM pattern can be formed on the wavelength conversion element thin film substrate 11b. In FIG. 1, an arrow 14 indicates the direction of polarization.

図1の電界印加法により基板全面に渡って分極反転現象を確実に起こすためには、レジストパタン12の長さをある程度の値(例えば、1mm長の線分パタン)よりも短くする必要がある。その理由は、電界集中により分極反転のトリガーとなるレジストパタン12の両端が離れ過ぎると、分極反転現象を完了しない領域が生じ、その領域での歩留まりが低下するからである。これを避けるため、例えば、図2のようなQPMパタン20が設計されている。QPMパタン20は、線分パタン23の長手方向の長さが1mmであり、長手方向の線分パタン23間に10〜20μm程度の隙間を設けている。   In order to surely cause the polarization inversion phenomenon over the entire surface of the substrate by the electric field application method of FIG. 1, it is necessary to make the length of the resist pattern 12 shorter than a certain value (for example, a line segment pattern having a length of 1 mm). . The reason is that if both ends of the resist pattern 12 that triggers polarization reversal due to electric field concentration are too far apart, a region where the polarization reversal phenomenon is not completed occurs, and the yield in that region decreases. In order to avoid this, for example, a QPM pattern 20 as shown in FIG. 2 is designed. In the QPM pattern 20, the length of the line segment pattern 23 in the longitudinal direction is 1 mm, and a gap of about 10 to 20 μm is provided between the line segment patterns 23 in the longitudinal direction.

波長変換素子用薄膜基板30上にQPMパタン20をレジストパタンで形成して電解印加法を行った場合、波長変換素子用薄膜基板30に形成される周期分極反転構造は図3のようになる。波長変換素子のクラッド部となるリッジ導波路(長さ50mm)は、図3のような波長変換素子用薄膜基板30を線分パタン23に対して直交するようにダイシングソーで切断して形成される。図3では、ダイシングソーで切断される領域を波長変換素子用導波路形成領域A1〜A4として示している。ところが、図3のようなQPMパタン20の周期分極反転構造には隙間31の領域があるため、ダイシングソーでの切断箇所によっては、リッジ導波路に隙間31の領域が含まれ擬似位相整合しない波長変換素子が作製されるというおそれがあった。図3では、波長変換素子用導波路形成領域A3及びA4が相当する。リッジ導波路に隙間31の領域が含まれないようにするため、ダイシングソー用の位置合わせマーク25を予めフォト・エッチング法により形成する必要があり、従来のQPMパタンの周期分極反転構造には、プロセスの煩雑およびそれに伴うコスト高という課題があった。波長変換素子用薄膜基板からリッジ導波路を切り出す場合で説明したが、基板から導波路チップデバイスを切り出す場合においても同様の課題を生ずる。なお、以下の説明においてリッジ導波路を波長変換素子用導波路として説明する。   When the QPM pattern 20 is formed with a resist pattern on the wavelength conversion element thin film substrate 30 and the electrolytic application method is performed, the periodic polarization inversion structure formed on the wavelength conversion element thin film substrate 30 is as shown in FIG. A ridge waveguide (length: 50 mm) serving as a clad portion of the wavelength conversion element is formed by cutting the wavelength conversion element thin film substrate 30 as shown in FIG. 3 with a dicing saw so as to be orthogonal to the line segment pattern. The In FIG. 3, the area | region cut | disconnected with a dicing saw is shown as wavelength formation element waveguide formation area | region A1-A4. However, since the periodic polarization reversal structure of the QPM pattern 20 as shown in FIG. 3 has a gap 31 region, the ridge waveguide includes the gap 31 region and does not have a quasi-phase matching depending on the cutting position in the dicing saw. There was a fear that a conversion element was produced. In FIG. 3, the wavelength conversion element waveguide formation regions A3 and A4 correspond. In order to prevent the gap 31 from being included in the ridge waveguide, the alignment mark 25 for the dicing saw needs to be formed in advance by a photo-etching method. In the conventional periodically poled structure of the QPM pattern, There was a problem of complicated processes and associated high costs. Although the case where the ridge waveguide is cut out from the thin film substrate for the wavelength conversion element has been described, the same problem occurs when the waveguide chip device is cut out from the substrate. In the following description, the ridge waveguide is described as a wavelength conversion element waveguide.

そこで、前記課題を解決するため、本発明は、ダイシングソー用の位置合わせマークを不要とし、プロセスが簡易で低コストで波長変換素子を作製できるQPMパタンの周期分極反転構造を持つ波長変換素子用薄膜基板及びこれを切断した波長変換素子用導波路を提供することを目的とする。   Accordingly, in order to solve the above-mentioned problems, the present invention eliminates the need for a positioning mark for a dicing saw, and is for a wavelength conversion element having a QPM pattern periodic polarization reversal structure that can be manufactured at a low cost with a simple process. An object of the present invention is to provide a thin film substrate and a waveguide for a wavelength conversion element obtained by cutting the thin film substrate.

上記目的を達成するために、本発明に係る波長変換素子用薄膜基板は、QPMパタンの隙間を斜めにレイアウトするシフト並列配置を採用することとした。   In order to achieve the above object, the wavelength conversion element thin film substrate according to the present invention employs a shift parallel arrangement in which the gaps of the QPM pattern are laid out obliquely.

具体的には、本発明に係る波長変換素子用薄膜基板は、厚み方向に分極する分極領域と、 周囲の前記分極領域の分極方向と逆向きに分極する分極反転領域と、が擬似位相整合パタンで周期的に配列された周期分極構造を備える波長変換素子用薄膜基板であって、前記擬似位相整合パタンは、長手方向が前記分極領域に収まる長さ且つ所定の幅の線分パタンを、長手方向である行方向には同一直線上にあるように且つ所定の隙間を介して等間隔になるように配列し、幅方向である列方向には平行且つ等間隔になるように配列し、さらに前記隙間が行毎に一方向へ一定長づつシフトするように周期的に配列されており、前記周期分極構造は、前記擬似位相整合パタンの前記線分パタンを前記分極反転領域としていることを特徴とする。   Specifically, the thin film substrate for a wavelength conversion element according to the present invention has a quasi phase matching pattern in which a polarization region polarized in the thickness direction and a polarization inversion region polarized in a direction opposite to the polarization direction of the surrounding polarization region. A thin film substrate for a wavelength conversion element having a periodically poled structure periodically arranged, wherein the quasi-phase matching pattern is a line segment pattern having a length in which a longitudinal direction can be accommodated in the polarization region and a predetermined width. Are arranged so that they are on the same straight line in the row direction, which is the direction, and at equal intervals through a predetermined gap, and are arranged so as to be parallel and equally spaced in the column direction, which is the width direction, and The gaps are periodically arranged so as to shift by a certain length in one direction for each row, and the periodic polarization structure uses the line segment pattern of the quasi-phase matching pattern as the domain-inverted region. And

分極反転のトリガーとなる線分パタンのエッジがウエハ面内に均一に分布するようになり、長い線分パタンを有する分極反転構造を波長変換素子用薄膜基板に作製することが可能となる。このため、波長変換素子用薄膜基板を切断して波長変換素子用導波路を形成する際は、オリフラなどで簡単にダイシングソーの位置合わせすることにより連続的に切断できる。このため、1つの波長変換素子用薄膜基板から得られる波長変換素子用導波路の数である収率を向上できる。また、基板に導波路チップデバイスを形成した後、導波路チップデバイスを切り出す場合も同様の効果を得ることができる。   The edge of the line segment pattern that serves as a trigger for polarization reversal is distributed uniformly in the wafer surface, and a domain-inverted structure having a long line segment pattern can be fabricated on the thin film substrate for a wavelength conversion element. Therefore, when the wavelength conversion element waveguide is formed by cutting the wavelength conversion element thin film substrate, it can be continuously cut by simply aligning the dicing saw with an orientation flat or the like. For this reason, the yield which is the number of the waveguides for wavelength conversion elements obtained from one thin film substrate for wavelength conversion elements can be improved. Further, the same effect can be obtained when the waveguide chip device is cut out after the waveguide chip device is formed on the substrate.

従って、本発明は、ダイシングソー用の位置合わせマークを不要とし、プロセスが簡易で低コストで波長変換素子を作製できるQPMパタンの周期分極反転構造を持つ波長変換素子用薄膜基板を提供することができる。   Accordingly, the present invention provides a thin film substrate for a wavelength conversion element having a QPM pattern periodic polarization reversal structure that eliminates the need for a positioning mark for a dicing saw, can be used to manufacture a wavelength conversion element with a simple process and at low cost. it can.

本発明に係る波長変換素子用導波路は、前記波長変換素子用薄膜基板を切断して作製される。具体的には、本発明に係る波長変換素子用導波路は、光の伝搬方向に対して垂直な方向に一様に分極し、光の伝搬方向に一定の長さをもつ分極区間と、前記分極区間の分極方向と逆向きに分極している分極反転領域を含み、光の伝搬方向に一定の幅をもつ分極反転区間と、が光の伝搬方向に交互に存在する周期分極構造を備える波長変換素子用導波路であって、前記分極反転区間は、全て前記分極反転領域である第1タイプ、前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の一端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第2タイプ、前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の両端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第3タイプ、及び、前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の他端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第4タイプ、があり、光の伝搬方向に、少なくとも1つの前記第1タイプ、少なくとも1つの前記第2タイプ、少なくとも1つの前記第3タイプ、少なくとも1つの前記第4タイプの順で配列されていることを特徴とする。   The waveguide for wavelength conversion elements according to the present invention is produced by cutting the thin film substrate for wavelength conversion elements. Specifically, the wavelength conversion element waveguide according to the present invention is uniformly polarized in a direction perpendicular to the light propagation direction, and has a polarization section having a certain length in the light propagation direction, A wavelength including a periodically poled structure including polarization inversion regions that are polarized in a direction opposite to the polarization direction of the polarization interval, and polarization inversion intervals having a certain width in the light propagation direction. A waveguide for a conversion element, wherein the domain-inverted sections are all the domain-inverted regions of the first type, the domain-inverted regions are at one end in a direction perpendicular to the light propagation direction and the polarization direction, and other regions Is polarized in the same direction as the polarization direction of the polarization section, the polarization inversion region is at both ends of the light propagation direction and the direction perpendicular to the polarization direction, and the other region is the polarization direction of the polarization section A third type polarized in the same direction as There is a fourth type in which the inversion region is at the other end of the direction perpendicular to the propagation direction and polarization direction of light, and the other region is polarized in the same direction as the polarization direction of the polarization section. , At least one of the first types, at least one of the second types, at least one of the third types, and at least one of the fourth types.

波長変換素子用導波路を前記波長変換素子用薄膜基板から切り出す際は、オリフラなどで簡単にダイシングソーの位置合わせすることにより連続的に切断できる。従って、本発明は、ダイシングソー用の位置合わせマークを不要とし、プロセスが簡易で低コストで波長変換素子を作製できる波長変換素子用導波路を提供することができる。   When the wavelength conversion element waveguide is cut out from the wavelength conversion element thin film substrate, it can be continuously cut by simply aligning the dicing saw with an orientation flat or the like. Therefore, the present invention can provide a waveguide for a wavelength conversion element that does not require an alignment mark for a dicing saw, can be manufactured with a simple process, and can be manufactured at low cost.

なお、作製した波長変換素子用導波路には複数のQPMパタンの隙間部分が含まれる場合があるが、当該部分は波長変換素子用導波路の光路長の微小部分であり変換波長のずれは生じず、また変換後の光パワーの低下も無視できる。   The manufactured wavelength conversion element waveguide may include a plurality of gaps between QPM patterns. However, this part is a minute part of the optical path length of the wavelength conversion element waveguide, and a shift in the conversion wavelength occurs. In addition, the decrease in optical power after conversion can be ignored.

本発明によれば、ダイシングソー用の位置合わせマークを不要とし、プロセスが簡易で低コストで波長変換素子を作製できるQPMパタンの周期分極反転構造を持つ波長変換素子用薄膜基板及びこれを切断した波長変換素子用導波路を提供することができる。   According to the present invention, a thin film substrate for a wavelength conversion element having a QPM pattern periodic polarization reversal structure that eliminates the need for an alignment mark for a dicing saw, is simple in process, and can be manufactured at low cost, and the same are cut. A waveguide for a wavelength conversion element can be provided.

添付の図面を参照して本発明の実施形態を説明する。以下に説明する実施形態は本発明の実施例であり、本発明は、以下の実施形態に制限されるものではない。なお、本明細書及び図面において符号が同じ構成要素は、相互に同一のものを示すものとする。   Embodiments of the present invention will be described with reference to the accompanying drawings. The embodiments described below are examples of the present invention, and the present invention is not limited to the following embodiments. In the present specification and drawings, the same reference numerals denote the same components.

(実施の形態1)
図4は、本実施形態の波長変換素子用薄膜基板に形成されるQPMパタン40を示す図である。 QPMパタン40は、長手方向が図5の波長変換素子用薄膜基板50に収まる長さ且つ所定の幅の線分状の線分パタン53を複数配列したパタンである。QPMパタン40は、長手方向である行方向には同一直線上にあるように配列し、幅方向である列方向には平行且つ等間隔で周期的に配列している。さらに、QPMパタン40は、行方向に隣り合う線分パタン53間に隙間31があり、隙間31が行毎に一方向へ一定長づつシフトするように線分パタン53が配列されている。すなわち、隙間31の領域は、線分パタン53に対して斜めに配置されている。
(Embodiment 1)
FIG. 4 is a diagram showing a QPM pattern 40 formed on the wavelength conversion element thin film substrate of the present embodiment. The QPM pattern 40 is a pattern in which a plurality of line segment patterns 53 having a predetermined length and a length that can be accommodated in the wavelength conversion element thin film substrate 50 in FIG. 5 are arranged. The QPM patterns 40 are arranged so as to be on the same straight line in the row direction which is the longitudinal direction, and are periodically arranged in parallel and at equal intervals in the column direction which is the width direction. Further, in the QPM pattern 40, there is a gap 31 between line segment patterns 53 adjacent in the row direction, and the line segment patterns 53 are arranged so that the gap 31 is shifted by a certain length in one direction for each row. That is, the area of the gap 31 is arranged obliquely with respect to the line segment pattern 53.

また、図5は、図4のQPMパタン40の周期分極構造を備える本実施形態の波長変換素子用薄膜基板50の説明する図である。波長変換素子用薄膜基板50は、厚み方向に分極する分極領域と、周囲の前記分極領域の分極方向と逆向きに分極する分極反転領域と、がQPMパタン40で周期的に配列された周期分極構造を備える。また、前記周期分極構造は、QPMパタン40の線分パタン53を分極反転領域とし、線分パタン53の周囲を分極領域55としている。詳細には、分極領域55は、波長変換素子用薄膜基板50内且つ線分パタン53以外の領域である。   FIG. 5 is a view for explaining the wavelength conversion element thin film substrate 50 of this embodiment having the periodic polarization structure of the QPM pattern 40 of FIG. The thin film substrate for wavelength conversion element 50 is a periodic polarization in which a polarization region polarized in the thickness direction and a polarization inversion region polarized in a direction opposite to the polarization direction of the surrounding polarization region are periodically arranged in a QPM pattern 40. Provide structure. In the periodic polarization structure, the line segment pattern 53 of the QPM pattern 40 is a polarization inversion region, and the periphery of the line segment pattern 53 is a polarization region 55. Specifically, the polarization region 55 is a region other than the line segment pattern 53 in the wavelength conversion element thin film substrate 50.

波長変換素子用薄膜基板50は、例えば、図1で説明した電界印加法でQPMパタン40の周期分極構造が形成される。波長変換素子用薄膜基板50から波長変換素子用導波路形成領域A1〜A4を切り出すことで、以下に説明する波長変換素子用導波路を得ることができる。また、波長変換素子用薄膜基板50に導波路チップデバイスを形成した後、導波路チップデバイスを切り出す場合も同様である。   In the wavelength conversion element thin film substrate 50, for example, the periodic polarization structure of the QPM pattern 40 is formed by the electric field application method described in FIG. By cutting out the wavelength conversion element waveguide formation regions A1 to A4 from the wavelength conversion element thin film substrate 50, a wavelength conversion element waveguide described below can be obtained. The same applies to the case where the waveguide chip device is cut out after the waveguide chip device is formed on the wavelength conversion element thin film substrate 50.

(実施の形態2)
図6は、本実施形態の波長変換素子用導波路60を示す図である。本実施形態の波長変換素子用導波路60は、光の伝搬方向Lに対して垂直な方向Eに一様に分極し、光の伝搬方向Lに一定の長さをもつ分極区間62と、分極区間62の分極方向と逆向きに分極している分極反転領域63aを含み、光の伝搬方向Lに一定の幅をもつ分極反転区間63と、が光の伝搬方向Lに交互に存在する周期分極構造を備える波長変換素子用導波路60であって、分極反転区間63は、全て分極反転領域63aである第1タイプ63−1、分極反転領域63aが光の伝搬方向L及び分極方向Eと垂直な方向Tの一端にあり、他の領域が分極区間62の分極方向と同じ方向に分極している第2タイプ63−2、分極反転領域63aが光の伝搬方向L及び分極方向Eと垂直な方向Tの両端にあり、他の領域が分極区間62の分極方向と同じ方向に分極している第3タイプ63−3、及び、分極反転領域63aが光の伝搬方向L及び分極方向Eと垂直な方向Lの他端にあり、他の領域が分極区間62の分極方向と同じ方向に分極している第4タイプ63−4、があり、光の伝搬方向Lに、少なくとも1つの第1タイプ63−1、少なくとも1つの第2タイプ63−2、少なくとも1つの第3タイプ63−3、少なくとも1つの第4タイプ63−4の順で配列されている。
(Embodiment 2)
FIG. 6 is a diagram showing the wavelength conversion element waveguide 60 of the present embodiment. The wavelength conversion element waveguide 60 of the present embodiment is uniformly polarized in a direction E perpendicular to the light propagation direction L, and has a polarization section 62 having a certain length in the light propagation direction L, and polarization. Periodic polarization in which polarization inversion sections 63 having polarization inversion regions 63a polarized in the direction opposite to the polarization direction of the sections 62 and having a constant width in the light propagation direction L exist alternately in the light propagation direction L A wavelength conversion element waveguide 60 having a structure, wherein the polarization inversion section 63 is a first type 63-1, which is a polarization inversion region 63a, and the polarization inversion region 63a is perpendicular to the light propagation direction L and the polarization direction E. The second type 63-2 in which the other region is polarized in the same direction as the polarization direction of the polarization section 62, and the polarization inversion region 63a is perpendicular to the light propagation direction L and the polarization direction E. At both ends of the direction T, the other region is the part of the polarization section 62 The third type 63-3 polarized in the same direction as the direction and the polarization inversion region 63a are at the other end in the direction L perpendicular to the light propagation direction L and the polarization direction E, and the other region is the polarization section 62. There is a fourth type 63-4 polarized in the same direction as the polarization direction of at least one first type 63-1, at least one second type 63-2, at least 1 in the light propagation direction L. Two third types 63-3 and at least one fourth type 63-4 are arranged in this order.

波長変換素子用導波路60は、光の伝搬方向Lに分極区間62と分極反転区間63とが交互に存在する導波路である。波長変換素子用導波路60のうち分極区間62は、垂直な方向Eに一様に分極している。波長変換素子用導波路60のうち分極反転区間63は、分極区間62の分極方向と逆向きに分極している分極反転領域63aをもつ。また、分極反転区間63は4つのタイプに分かれる。第1タイプ63−1は、分極反転区間63の全てが分極反転領域63aであるタイプである。第2タイプ63−2は、光の伝搬方向Lから見て分極反転領域63aが光の伝搬方向と分極している方向Eとに垂直な方向Tの一方の側のみにあるタイプである。第3タイプ63−3は、光の伝搬方向Lから見て分極反転領域63aが光の伝搬方向と分極している方向Eとに垂直な方向Tの両側にあるタイプである。第4タイプ63−4は、分極反転領域63aが第2タイプ63−2と逆側のみにあるタイプである。また、第2タイプ63−2から第4タイプ63−4は、分極反転領域63a以外の領域が分極区間62の分極方向と同じ方向に分極している。   The wavelength conversion element waveguide 60 is a waveguide in which the polarization sections 62 and the polarization inversion sections 63 exist alternately in the light propagation direction L. The polarization section 62 of the wavelength conversion element waveguide 60 is uniformly polarized in the vertical direction E. The polarization inversion section 63 of the wavelength conversion element waveguide 60 has a polarization inversion area 63 a that is polarized in the direction opposite to the polarization direction of the polarization section 62. Moreover, the polarization inversion section 63 is divided into four types. The first type 63-1 is a type in which the entire domain inversion section 63 is the domain inversion region 63a. The second type 63-2 is a type in which the domain-inverted region 63a is only on one side of the direction T perpendicular to the light propagation direction and the polarization direction E when viewed from the light propagation direction L. The third type 63-3 is a type in which the domain-inverted regions 63a are on both sides of the direction T perpendicular to the light propagation direction and the polarization direction E when viewed from the light propagation direction L. The fourth type 63-4 is a type in which the domain-inverted region 63a is only on the opposite side to the second type 63-2. In the second type 63-2 to the fourth type 63-4, the region other than the polarization inversion region 63a is polarized in the same direction as the polarization direction of the polarization section 62.

分極区間62は図5の分極領域55であり、分極反転区間63は図5の線分パタン53である。分極反転区間63の分極反転領域63aは図5の線分パタン53であり、分極反転区間63の他の領域は図5の隙間31である。すなわち、分極反転区間63の第1タイプ63−1は、図5の線分パタン53の中央付近の部分である。分極反転区間63の第2タイプ63−2から第4タイプ63−4は、図5の隙間31が含まれる部分である。   The polarization section 62 is the polarization region 55 of FIG. 5, and the polarization inversion section 63 is the line segment pattern 53 of FIG. The domain-inverted region 63a in the domain-inverted section 63 is the line segment pattern 53 in FIG. 5, and the other region in the domain-inverted section 63 is the gap 31 in FIG. That is, the first type 63-1 of the polarization inversion section 63 is a portion near the center of the line segment pattern 53 of FIG. The second type 63-2 to the fourth type 63-4 of the polarization inversion section 63 are portions including the gap 31 in FIG.

波長変換素子用導波路60は、QPMパタン40の隙間31の傾きや波長変換素子用薄膜基板50から波長変換素子用導波路形成領域の切り出し方によって、図6のように隙間31を含むことがある。しかし、波長変換素子用導波路60の全体に対して隙間31が含まれる部分が少ないため、変換波長のずれは生じず、また変換後の光パワーの低下も無視できる。   The wavelength conversion element waveguide 60 may include the gap 31 as shown in FIG. 6 depending on the inclination of the gap 31 of the QPM pattern 40 and the method of cutting out the wavelength conversion element waveguide formation region from the wavelength conversion element thin film substrate 50. is there. However, since there are few portions including the gap 31 with respect to the entire wavelength conversion element waveguide 60, the shift of the conversion wavelength does not occur, and the decrease in the optical power after conversion can be ignored.

本発明の波長変換素子用薄膜基板及び波長変換素子用導波路の構造は、本明細書で説明したLiNbOの基板に限らず、非線形光学効果を有するKNbO、LiTaO、LiNb(x)Ta(1−x)(0≦x≦1)又はKTiOPO、或いは、それらにMg、Zn、Sc、Inからなる群から選ばれた少なくとも一種を添加物として含有している化合物の基板にも適用できる。 The structures of the thin film substrate for wavelength conversion element and the waveguide for wavelength conversion element of the present invention are not limited to the LiNbO 3 substrate described in this specification, and KNbO 3 , LiTaO 3 , LiNb (x) Ta having a nonlinear optical effect. (1-x) O 3 (0 ≦ x ≦ 1) or KTiOPO 4 , or a compound substrate containing at least one selected from the group consisting of Mg, Zn, Sc, and In as an additive Is also applicable.

レジストパタンと液体電極を用いた電界印加法を説明する図である。(a)は、波長変換素子用薄膜基板上に線分パタンを並列に並べた多数のレジストパタンをマスクとして形成した後の断面を示した図である。(b)は、液体電極に電圧を印加してレジストパタンが存在しない領域の分極を強制的に反転させた後の断面を示した図である。It is a figure explaining the electric field application method using a resist pattern and a liquid electrode. (A) is the figure which showed the cross section after forming many resist patterns which arranged the line segment pattern in parallel on the thin film substrate for wavelength conversion elements as a mask. (B) is the figure which showed the cross section after applying a voltage to a liquid electrode and forcibly inverting the polarization of the area | region where a resist pattern does not exist. 従来の波長変換素子用薄膜基板に形成される周期分極反転構造のパタンを説明する図である。It is a figure explaining the pattern of the periodic polarization inversion structure formed in the conventional thin film substrate for wavelength conversion elements. 従来の波長変換素子用薄膜基板を説明する図である。It is a figure explaining the conventional thin film substrate for wavelength conversion elements. 本発明に係る波長変換素子用薄膜基板に形成される周期分極反転構造のパタンを説明する図である。It is a figure explaining the pattern of the periodic polarization inversion structure formed in the thin film substrate for wavelength conversion elements which concerns on this invention. 本発明に係る波長変換素子用薄膜基板を説明する図である。It is a figure explaining the thin film substrate for wavelength conversion elements concerning the present invention. 本発明に係る波長変換素子用導波路を説明する図である。It is a figure explaining the waveguide for wavelength conversion elements concerning the present invention.

符号の説明Explanation of symbols

11a:波長変換素子用薄膜基板
11b:波長変換素子用薄膜基板
12:レジストパタン
13:液体電極
14:矢印
15:裏面電極
16:電界印加手段
20、40:擬似位相整合(QPM)パタン
23、53:線分パタン
25:位置合わせマーク
30、50:波長変換素子用薄膜基板
31:隙間
55:分極領域
60:波長変換素子用導波路
62:分極区間
63:分極反転区間
63a:分極反転領域
63−1:分極反転区間の第1タイプ
63−2:分極反転区間の第2タイプ
63−3:分極反転区間の第3タイプ
63−4:分極反転区間の第4タイプ
A1〜A4:波長変換素子用導波路形成領域
L:光の伝搬方向
E:方向
T:光の伝搬方向と分極している方向とに垂直な方向
11a: Wavelength converting element thin film substrate 11b: Wavelength converting element thin film substrate 12: Resist pattern 13: Liquid electrode 14: Arrow 15: Back electrode 16: Electric field applying means 20, 40: Quasi-phase matching (QPM) pattern 23, 53 : Line segment pattern 25: alignment mark 30, 50: wavelength conversion element thin film substrate 31: gap 55: polarization region 60: wavelength conversion element waveguide 62: polarization section 63: polarization inversion section 63a: polarization inversion area 63- 1: First type 63-2 of polarization inversion section: Second type of polarization inversion section 63-3: Third type of polarization inversion section 63-4: Fourth type of polarization inversion section A1 to A4: For wavelength conversion element Waveguide formation region L: light propagation direction E: direction T: direction perpendicular to light propagation direction and polarization direction

Claims (2)

厚み方向に分極する分極領域と、
周囲の前記分極領域の分極方向と逆向きに分極する分極反転領域と、
が擬似位相整合パタンで周期的に配列された周期分極構造を備える波長変換素子用薄膜基板であって、
前記擬似位相整合パタンは、
長手方向が前記分極領域に収まる長さ且つ所定の幅の線分パタンを、長手方向である行方向には同一直線上にあるように且つ所定の隙間を介して等間隔になるように配列し、幅方向である列方向には平行且つ等間隔になるように配列し、さらに前記隙間が行毎に一方向へ一定長づつシフトするように周期的に配列されており、
前記周期分極構造は、
前記擬似位相整合パタンの前記線分パタンを前記分極反転領域としていることを特徴とする波長変換素子用薄膜基板。
A polarization region polarized in the thickness direction;
A domain-inverted region that polarizes in a direction opposite to the polarization direction of the surrounding polarized region;
Is a thin film substrate for a wavelength conversion element comprising a periodic polarization structure periodically arranged in a quasi-phase matching pattern,
The pseudo phase matching pattern is:
A line segment pattern having a length and a predetermined width that fits in the polarization region in the longitudinal direction is arranged so as to be on the same straight line in the row direction that is the longitudinal direction and at equal intervals through a predetermined gap. Are arranged so as to be parallel and equally spaced in the column direction which is the width direction, and further, the gaps are periodically arranged so as to shift by a certain length in one direction for each row,
The periodic polarization structure is:
A thin film substrate for a wavelength conversion element, wherein the line segment pattern of the quasi phase matching pattern is used as the domain-inverted region.
光の伝搬方向に対して垂直な方向に一様に分極し、光の伝搬方向に一定の長さをもつ分極区間と、
前記分極区間の分極方向と逆向きに分極している分極反転領域を含み、光の伝搬方向に一定の幅をもつ分極反転区間と、
が光の伝搬方向に交互に存在する周期分極構造を備える波長変換素子用導波路であって、
前記分極反転区間は、
全て前記分極反転領域である第1タイプ、
前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の一端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第2タイプ、
前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の両端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第3タイプ、
及び、
前記分極反転領域が光の伝搬方向及び分極方向と垂直な方向の他端にあり、他の領域が前記分極区間の分極方向と同じ方向に分極している第4タイプ、
があり、
光の伝搬方向に、少なくとも1つの前記第1タイプ、少なくとも1つの前記第2タイプ、少なくとも1つの前記第3タイプ、少なくとも1つの前記第4タイプの順で配列されていることを特徴とする波長変換素子用導波路。
A polarization section that is uniformly polarized in a direction perpendicular to the light propagation direction and has a certain length in the light propagation direction;
A domain-inverted region including a domain-inverted region that is polarized in a direction opposite to the direction of polarization of the domain-polarized section, and having a certain width in the light propagation direction;
Is a waveguide for a wavelength conversion element having a periodic polarization structure that alternately exists in the light propagation direction,
The polarization inversion interval is
The first type, which is all the domain-inverted region,
A second type in which the domain-inverted region is at one end of a direction perpendicular to the light propagation direction and the polarization direction, and the other region is polarized in the same direction as the polarization direction of the polarization section;
A third type in which the domain-inverted regions are at both ends of a light propagation direction and a direction perpendicular to the polarization direction, and the other regions are polarized in the same direction as the polarization direction of the polarization section;
as well as,
A fourth type in which the domain-inverted region is at the other end of the light propagation direction and the direction perpendicular to the polarization direction, and the other region is polarized in the same direction as the polarization direction of the polarization section;
There is
Wavelengths arranged in the light propagation direction in the order of at least one of the first type, at least one of the second types, at least one of the third types, and at least one of the fourth types. Waveguide for conversion element.
JP2008033870A 2008-02-15 2008-02-15 Thin film substrate for wavelength conversion element and waveguide for wavelength conversion element Expired - Fee Related JP4709864B2 (en)

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