JP4715670B2 - Oscillation circuit, piezoelectric oscillator, and method for manufacturing piezoelectric oscillator - Google Patents

Description

  The present invention relates to an oscillation circuit, a piezoelectric oscillator, and a method for manufacturing a piezoelectric oscillator.

  At present, downsizing of electronic devices is rapidly progressing. For this reason, along with this miniaturization, further miniaturization is required for electronic components used in electronic devices. Examples of the electronic component herein include a piezoelectric oscillator.

  The piezoelectric oscillator includes a base made of a ceramic multilayer substrate, an integrated circuit element and a crystal vibrating piece mounted in the base, and a metal lid for hermetically sealing the integrated circuit element and the crystal vibrating piece mounted on the base. . Among the methods for manufacturing the piezoelectric oscillator, there are the following methods for mounting the integrated circuit element and the quartz crystal resonator element on the base.

  A crystal vibrating piece (specifically an extraction electrode) is directly bonded to a base (specifically an electrode pad) with a conductive bonding material, and an integrated circuit element (specifically a connection electrode terminal) is used as a base (specifically an electrode pad). There is a method of indirectly bonding by wire bonding (see, for example, Patent Document 1). According to this method, since the wire bonding bonding is used to bond the integrated circuit element to the base, the terminal of the integrated circuit element is indirectly bonded to the electrode pad of the base using the wire. Therefore, the integrated circuit element is mounted on the base so that the connection electrode terminals of the integrated circuit element are arranged on the surface of the integrated circuit element so that wire bonding to the base of the integrated circuit element is easy.

As another method, there is a method in which a crystal resonator element is directly bonded to a base by a conductive bonding material, and an integrated circuit element is directly bonded to the base by an FCB (Flip Chip Bonding) method (see, for example, Patent Document 2). . According to this method, since the FCB method is used for bonding the integrated circuit element to the base, the connection electrode terminal of the integrated circuit element is bonded to the electrode pad of the base directly by the conductive bonding material. Therefore, the integrated circuit element is provided on the base so that the terminals of the integrated circuit element are arranged on the back surface of the integrated circuit element.
JP 2006-157513 A JP 2005-318436 A

  By the way, according to the above-described two bonding methods (bonding by wire bonding and bonding by FCB method), the arrangement of the front and back surfaces of the integrated circuit element is different when mounted on the base. Therefore, according to these two joining methods, the positions of the connection electrode terminals of the integrated circuit element on the base when the integrated circuit element is mounted on the base are different.

  The above-described differences cause the following problems. When an integrated circuit element is used regardless of the two bonding methods, the position of the connection electrode terminal of the integrated circuit element provided on the base is different. When joining by the connection method is performed, it is necessary to change the design of the base wiring pattern based on the positions of the different connection electrode terminals. For example, when a base and an integrated circuit element corresponding to bonding by wire bonding are applied to bonding by the FCB method, the wiring pattern of the base cannot correspond to bonding by the FCB method. Therefore, in order to cope with the bonding by the FCB method, for example, a countermeasure such as increasing the base layer and newly forming a wiring pattern in the increased layer is taken. However, in the case of this measure, the increase in the base layer hinders a reduction in the height (miniaturization) of the piezoelectric oscillator.

  Accordingly, in order to solve the above-described problems, an object of the present invention is to provide an oscillation circuit, a piezoelectric oscillator, and a method for manufacturing the piezoelectric oscillator that prevent the low-profile of the piezoelectric oscillator from being hindered.

  In order to achieve the above object, a method of manufacturing an oscillation circuit used in a piezoelectric oscillator according to the present invention includes a grounded ground terminal, a power supply terminal for supplying power to the piezoelectric oscillator, and a piezoelectric vibrating piece as an oscillation unit. In the wiring pattern forming step of forming the wiring pattern of the oscillation circuit including the piezoelectric vibrating reed terminal to be connected to the oscillation electronic component, the connecting step of connecting a protection diode to each terminal, and the wiring pattern forming step Select whether to use the ground terminal as a ground terminal and the power supply terminal as a power supply terminal, or to change the ground terminal and the power supply terminal to use the ground terminal as a power supply terminal and use the power supply terminal as a ground terminal And a selection step.

  According to the present invention, since the wiring pattern forming step, the connecting step, and the selecting step are included, each terminal position of the oscillation electronic component that forms the oscillation circuit is added substantially without adding a new manufacturing step. It becomes possible to change. As a result, since there is no additional manufacturing process, it is possible to reduce the manufacturing cost and mass-produce the piezoelectric oscillator in a state where the manufacturing time is reduced. Further, according to the present invention, for example, it is possible to manufacture a piezoelectric oscillator (specifically, an oscillation electronic component that forms an oscillation circuit) without limiting bonding by wire bonding and bonding by FCB method. . As a result, it is possible to prevent the piezoelectric oscillator from being lowered in height without taking measures such as increasing the number of base layers and newly forming a wiring pattern in the increased layers. In addition, since the protection diode is connected to the ground terminal, which originally does not require a protection diode, the oscillation circuit can be easily changed by designing the wiring pattern as compared with a wiring pattern for providing a protection diode to other terminals. Can be formed.

In order to achieve the above object, an oscillation circuit according to the present invention is an oscillation circuit used for a piezoelectric oscillator, which is a grounded ground terminal, a power supply terminal for supplying power to the piezoelectric oscillator, and an oscillation unit. A piezoelectric vibrating reed terminal connected to the piezoelectric vibrating reed, and a protection diode is connected to each of the terminals, the ground terminal is used as a ground terminal, the power supply terminal is used as a power supply terminal, or the ground terminal and the The power supply terminal is changed and the ground terminal is used as a power supply terminal, the power supply terminal is used as a ground terminal, the ground terminal is used as a ground terminal, and the power supply terminal is used as a power supply terminal, or the ground terminal and the power supply Change the terminal to use the ground terminal as a power terminal and use the power terminal as a ground terminal Wherein the switch unit for selecting is provided.

According to the present invention, the ground terminal, the power supply terminal, and the piezoelectric vibrating piece terminal are included, and a protection diode is connected to each of the terminals, and the ground terminal is used as a ground terminal and the power supply terminal is used as a power supply terminal. Or the ground terminal and the power supply terminal are changed and the ground terminal is used as a power supply terminal and the power supply terminal is used as a ground terminal. The terminal position can be substantially changed. Therefore, for example, it is possible to use the oscillation electronic component regardless of bonding by wire bonding or bonding by the FCB method. As a result, it is possible to prevent the piezoelectric oscillator from being hindered regardless of the method of joining the oscillation electronic components. Further, according to the present invention, since it can be applied to piezoelectric oscillators manufactured by various bonding methods, it is possible to reduce the manufacturing cost and to mass-produce piezoelectric oscillators while suppressing the manufacturing time. Become. In addition, since the protection diode is connected to the ground terminal, which originally does not require a protection diode, the oscillation circuit can be easily changed by designing the wiring pattern as compared with a wiring pattern for providing a protection diode to other terminals. Can be formed.

  In order to achieve the above object, a piezoelectric oscillator according to the present invention includes a piezoelectric vibrating piece, which is a vibrating portion, mounted on a base, and an oscillation electronic component in which the oscillation circuit according to the present invention is formed, Is hermetically sealed with a lid.

  According to the present invention, the piezoelectric vibrating piece and the oscillation electronic component in which the oscillation circuit according to the present invention is formed are hermetically sealed by the lid, so that the oscillation circuit in which the oscillation circuit is formed is provided. Each terminal position of the electronic component can be substantially changed, and the electronic component for oscillation can be used regardless of bonding by wire bonding or bonding by the FCB method. As a result, it is possible to prevent the piezoelectric oscillator from being reduced in height regardless of the method of joining the oscillation electronic component. In addition, according to the present invention, since it can be used for the piezoelectric oscillator manufactured by various bonding methods, it is possible to reduce the manufacturing cost and to mass-produce the piezoelectric oscillator in a state where the manufacturing time is suppressed. .

  In the above configuration, the base may be formed by stacking a plurality of base layers, and the base layer on which the oscillation electronic component is mounted may be a lowermost layer.

  In this case, since the base layer on which the electronic component for oscillation is mounted is the lowermost layer, it is not necessary to provide a base layer in order to form a new wiring pattern, thereby preventing the low profile of the piezoelectric oscillator from being hindered. Is possible.

  According to the present invention, it is possible to prevent the piezoelectric oscillator from being reduced in height.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the case where the present invention is applied to a crystal oscillator as a piezoelectric oscillator is shown.

  As shown in FIG. 1, a crystal oscillator 1 according to the present embodiment includes a crystal vibrating piece 2 (a piezoelectric vibrating piece referred to in the present invention), an integrated circuit element 3 (an oscillation electronic component referred to in the present invention), and these crystals. It comprises a base 4 on which the resonator element 2 and the integrated circuit element 3 are mounted, and a lid 5 for hermetically sealing the crystal resonator element 2 and the integrated circuit element 3 mounted on the base 4.

  In this crystal oscillator 1, a base 4 and a lid 5 are joined to form a casing, and the crystal resonator element 2 and the integrated circuit element 3 are mounted on the base 4 inside the casing (hereinafter referred to as an internal space 11). In addition, the inside of the housing is hermetically sealed. Note that the internal space 11 in this embodiment refers to a region hermetically sealed by the lid 5 and the base 4. Next, each configuration of the crystal oscillator 1 will be described.

  As shown in FIG. 1, the quartz crystal vibrating piece 2 is formed of an AT-cut quartz piece (not shown), and is formed into a single rectangular parallelepiped on a rectangular plan view. Excitation electrodes 23 and 24 are provided on both main surfaces 21 and 22 of the quartz crystal resonator element 2 and external electrodes (in this embodiment, electrode pads 48a and 48b of the base 4 described below) are external electrodes. And extraction electrodes 25 and 26 drawn from the excitation electrodes 23 and 24 are formed. The excitation electrodes 23 and 24 and the extraction electrodes 25 and 26 are formed, for example, in the order of chromium and gold, or in the order of chromium, gold, and chromium, or in the order of chromium, silver, and chromium from the quartz diaphragm side. ing. The electrodes of the excitation electrodes 23 and 24 and the extraction electrodes 25 and 26 cover the substrate of the quartz crystal vibrating piece 2 with a film formation mask having an opening pattern shape corresponding to these electrodes, and vacuum deposition method or sputtering method or the like. It forms by performing electrode film formation by. The crystal vibrating piece 2 is bonded to the base 4 via a conductive bonding material (not shown). As the conductive bonding material herein, a silicone resin conductive adhesive containing a conductive material such as a silver filler is used. By curing the conductive adhesive, a plurality of silver fillers are combined to be conductive. It becomes a sex substance. The conductive adhesive is not limited to a silicone resin conductive adhesive, but may be a urethane or epoxy conductive adhesive. Further, the crystal vibrating piece 2 may be bonded to the base 4 by the FCB method using a metal bump such as gold as a material of the conductive bonding material.

The integrated circuit element 3 (the electronic component for oscillation referred to in the present invention) is a one-chip integrated circuit element (for example, C-MOS, Bi-MOS) in which a circuit configuration that constitutes an oscillation circuit together with the above-described crystal resonator element 2 is integrated. And a circuit such as a temperature compensation circuit, a voltage control circuit, or a PLL output circuit is incorporated as necessary. As shown in FIG. 2, the integrated circuit element 3 has a rectangular parallelepiped shape as a whole, and six connection electrode terminals 31, 32, 33, 34, 35, and 35 are formed on the lower surface (upper surface in FIG. 1) of the integrated circuit element 3. 36 are formed at equal intervals in the longitudinal direction (2 × 3 matrix). Specifically, as shown in FIGS. 1 and 2, the six connection electrode terminals 31 to 36 include an INH terminal 31 that controls the crystal oscillator 1 and an XT terminal 32 that is an input / output terminal to the crystal resonator element 2. 33, a grounded (grounded) GND terminal 34, a V _DD terminal 35 (power supply terminal in the present invention) for supplying power to the crystal oscillator 1 (an integrated circuit element 3 including an oscillation circuit), and a crystal oscillator 1 The output terminal 36 is an output terminal 36. The connection electrode terminals 31 to 36 have a surface on which a gold layer and gold bumps are formed. A conductive layer 37 (see FIG. 2) is formed on the upper surface of the integrated circuit element 3. The conductive layer 37 is drawn out to the GND terminal 34 and grounded (grounded). Further, the conductive layer 37 is formed to extend to the outer peripheral edge of the lower surface. The integrated circuit element 3 is bonded to the base 4 by using conductive bumps (not shown) such as gold bumps by the FCB method before the crystal vibrating piece 2 is bonded to the base 4. Electromechanical joining is performed by applying sonic vibration energy. Here, the bonding is performed by inverting the integrated circuit element 3 shown in FIG. 1 in the direction of arrow A (that is, the upper and lower surfaces of the integrated circuit element 3 mounted on the base 4 are inverted from the upper and lower surfaces shown in FIG. To do). The heating here is performed by heating the base 4 to a predetermined temperature. Further, an underfill made of an insulating resin material may be formed between the integrated circuit element 3 and the bottom surface of the internal space 11 described below as necessary. By forming this underfill, the mechanical joint strength of the integrated circuit element 3 can be improved.

  The lid 5 is made of a metal material and is formed into a single plate having a rectangular shape in plan view as shown in FIG. Using the lid 5, the opening of the base 4 is closed and hermetically sealed in an inert gas atmosphere or a vacuum atmosphere to form an internal space 11. A brazing material (not shown) is formed on the lower surface of the lid 5 and joined to the base 4 (metallized layer described below) by a technique such as seam welding or beam welding. A package is configured. By configuring the package, the lid 5 is drawn out to an external connection electrode terminal (not shown) formed on the lower surface of the base 4 through the base 4 and is grounded (grounded). The lid 5 may be a ceramic material and hermetically sealed through a glass material.

  The base 4 is a ceramic package made of a ceramic material such as alumina, and is formed in a box-like body including a bottom portion 41 and a wall portion 42 extending upward from the bottom portion 41. The base 4 is formed by laminating three base layers 43a, 43b, and 43c from the upper surface, and two rectangular parallelepipeds having a hollow ceramic material on a single rectangular plate in plan view are laminated into a concave shape. Has been fired. The wall 42 is formed along the outer periphery of the surface of the bottom 41. The upper surface of the wall portion 42 is a bonding area with the lid 5, and a metallized layer 44 for bonding with the lid 5 is provided in the bonding area, and the metallized layer 44 is provided on the lower surface of the base 4. It is connected to an electrode terminal (not shown). In addition, castellations 45a, 45b, 45c, and 45d are formed at the four corners of the base 1 in plan view. As shown in FIG. 1, the bottom portion 41 is composed of a base layer 43c, the wall portion 42 is composed of base layers 43a and 43b, and the crystal vibrating piece 2 and the integrated circuit element 3 are the bottom layer base layer. 43c.

  Further, as shown in FIG. 1, a step portion 47 is formed on the side wall 46 in the internal space 11 of the base 4 which is laminated and fired integrally in a concave shape, and a crystal vibrating piece is formed on the step portion 47. Electrode pads 48a and 48b electrically connected to the two excitation electrodes 23 and 24 are formed. These electrode pads 48a and 48b are connected to electrode pads 49a and 49b that are electrically connected to the integrated circuit element 3 formed on the bottom 41 in the internal space 11 via routing electrodes (not shown). Electrode pads 49a, 49b, 49c, 49d, 49e, and 49f that are electrically connected to the integrated circuit element 3 are formed on the bottom 41 in the internal space 11.

  Of these electrode pads 49a to 49f, the electrode pads 49c to 49f are respectively connected to external connection electrode terminals provided on the lower surface of the base 4 via corresponding routing electrodes (not shown). The terminal is connected to an external electrode of an external component or external device. The electrode pads 49a to 49f, the lead-out electrodes, and the external connection electrode terminals are formed by integrally baking with the base 4 after printing a metallized material such as tungsten or molybdenum. And some of these electrode pads 49a to 49f, routing electrodes, and external connection electrode terminals are formed by forming nickel plating on the upper part of the metallization and forming gold plating on the upper part thereof.

  Next, the oscillation circuit 6 of the integrated circuit element 3 will be described with reference to the drawings. Note that the oscillation circuit 6 shown in FIG. 3 is the oscillation circuit 6 of the integrated circuit element 3 corresponding to the junction by the FCB method.

As shown in FIG. 3, the oscillation circuit 6 of the crystal oscillator 1 includes a crystal resonator element 2 and an inverter I and a resistor R for operating the crystal resonator element 2 connected in parallel, and between both ends of the inverter I and the resistor R and each ground. It has a circuit configuration in which capacitors C1 and C2 are arranged. The capacitors C1 and C2 here are one of the frequency determination parameters, and suppress the adverse effect of the characteristics of the crystal oscillator 1 due to the fluctuation of the capacitance value by suppressing the capacitance value to a predetermined value. As shown in FIG. 3, the oscillation circuit 6 includes protective diodes D1, D2, and XT terminals 32, 33, a V _DD terminal 35, and a GND terminal 34, which are input / output terminals of the crystal vibrating piece 2, respectively. D3, D4, D5, and D6 are connected, and the V _DD terminal 35 is connected to the inverter I. The protective diodes D1 to D6 are connected to the respective terminals for the purpose of releasing overvoltage to the respective terminals because the integrated circuit element 3 is formed of CMOS.

  Incidentally, in the crystal oscillator 1 described above, the integrated circuit element 3 is bonded to the base 4 by the FCB method. However, the bonding method of the integrated circuit element 3 is not limited to the crystal oscillator 1 described above, and may be the bonding method of the integrated circuit element 3 shown in FIG. Next, a method for joining the integrated circuit elements 3 shown in FIG. 4 will be described with reference to the drawings. Here, the bonding method of the integrated circuit element 3 shown in FIG. 4 is that the bonding of the integrated circuit element 3 to the base 4 uses wire Y as shown in FIG. 4 instead of the FCB method shown in FIG. It is joining by. The description of the same members as those of the crystal oscillator 1 shown in FIG. 1 is omitted.

  According to the bonding by wire bonding using the wire Y shown in FIG. 4, the direction of bonding of the integrated circuit element 3 to the base 4 is different from the direction of bonding of the integrated circuit element 3 to the base shown in FIG. The top and bottom surfaces of 3 are mounted as they are without being inverted. A concave space portion 411 for arranging the integrated circuit element 3 is formed in the lowermost layer (base layer 43c) of the base 4.

  As described above, the method of bonding the integrated circuit element 3 by the FCB method and the wire bonding is different in the bonding direction of the integrated circuit element 3 to the base 4 as shown in FIGS. The position of each terminal of the element is different. That is, the integrated circuit element 3 corresponding to each must be used.

Therefore, in this embodiment, the protection diodes D1 to D6 are connected to the XT terminals 32 and 33, the GND terminal 34, and the VDD terminal 35, respectively, and the GND terminal 34 is used as the GND terminal and the VDD terminal 35 is used as the VDD terminal. Alternatively, the GND terminal 34 and the VDD terminal 35 are changed, and the GND terminal 34 is used as the VDD terminal 35 and the VDD terminal 35 is used as the GND terminal 34 . As a result, as shown in FIGS. 2, 3 and 5, the GND terminal 34 is used as the GND terminal as shown in FIG. 3 and the VDD terminal 35 is used as the VDD terminal, or the GND terminal 34 and the VDD terminal as shown in FIG. 35, the GND terminal 34 can be used as the VDD terminal 35 and the VDD terminal 35 can be used as the GND terminal 34. Therefore, as shown in FIGS. 1 and 4, the same integrated circuit element 3 can be used even when the direction of bonding of the integrated circuit element 3 to the base 4 is different.

The GND terminal 34 is used as the GND terminal and the VDD terminal 35 is used as the VDD terminal, or the GND terminal 34 and the VDD terminal 35 are changed and the GND terminal 34 is used as the VDD terminal 35 and the VDD terminal 35 is used as the GND terminal 34. This is applied in the manufacturing process of the integrated circuit element 3. Specifically, a wiring pattern of the oscillation circuit 6 including the connection electrode terminals (INH terminal 31, XT terminals 32, 33, GND terminal 34, VDD terminal 35, and OUT terminal 36) of the integrated circuit element 3 is formed (wiring pattern formation). Step). In this wiring pattern forming step, the substrate of the crystal resonator element 2 is covered with a deposition mask having an opening pattern shape corresponding to the connection electrode terminals 31 to 36 and the electrode patterns of the connection electrode terminals 31 to 36, and vacuum deposition is performed. A wiring pattern is formed by forming an electrode film by a method or a sputtering method. Then, protection diodes D1 to D6 are connected to the INH terminal 31, the XT terminals 32 and 33, the GND terminal 34, the VDD terminal 35, and the OUT terminal 36 of the integrated circuit element 3, respectively (connection process).

Or using a V _DD terminal 35 with the GND terminal 34 as the GND terminal as V _DD terminal in the wiring pattern formation step described above, or, V _DD terminal 35 to the GND terminal 34 to change the GND terminal 34 and V _DD terminal 35 It is used to select whether the V _DD terminal 35 is used as the GND terminal 34 (selection step). Specifically, when the joining method by the FCB method is adopted, the wiring pattern of the oscillation circuit shown in FIG. 3 is formed by using the GND terminal 34 as the GND terminal and the V _DD terminal 35 as the V _DD terminal in the selection process. Also, in the case of employing the bonding method by wire bonding using wires Y, using a V _DD terminal 35 with the GND terminal 34 as a V _DD terminal 35 to change the GND terminal 34 and V _DD terminal 35 as the GND terminal 34 Thus, the wiring pattern of the oscillation circuit shown in FIG. 5 is formed.

According to the manufacturing method of the oscillation circuit used for the crystal oscillator 1 according to the above-described embodiment, since the wiring pattern forming step, the connecting step, and the selecting step are included, the bonding method is any one of the FCB method and the wire bonding. 3 can be selected depending on whether or not the oscillation circuit 6 shown in FIG. 3 and the oscillation circuit 6 shown in FIG. 5 are selected. As a result, this embodiment manufactures an arbitrary crystal oscillator 1 regardless of the bonding method. As a result, it is preferable for mass production of the crystal oscillator 1. Further, according to this embodiment, the positions of the connection electrode terminals (GND terminal 34 and V _DD terminal 35) of the integrated circuit element 3 forming the oscillation circuit 6 are substantially changed without adding a new manufacturing process. be able to. As a result, since there is no additional manufacturing process, it is possible to mass-produce the crystal oscillator 1 while reducing the manufacturing cost and suppressing the manufacturing time. In addition, the crystal oscillator 1 manufactured by the manufacturing method according to the present embodiment can use the integrated circuit element 3 regardless of bonding by wire bonding or bonding by the FCB method, for example. As a result, it is possible to prevent the crystal oscillator from being reduced in height without taking measures such as increasing the base 4 layer and newly forming a wiring pattern in the increased layer. Further, since the protection diode D6 is connected to the GND terminal 34 that originally does not require the protection diode, the oscillation circuit 6 can be easily changed by designing the wiring pattern as compared with the wiring pattern for providing the protection diode to other terminals. Can be formed.

Further, according to the oscillation circuit 6 and the crystal oscillator 1 according to the above-described embodiment, the positions of the connection electrode terminals (GND terminal 34 and V _DD terminal 35) of the integrated circuit element 3 in which the oscillation circuit 6 is formed are substantially changed. Can be changed. Therefore, for example, the integrated circuit element 3 can be used regardless of bonding by wire bonding or bonding by the FCB method. As a result, it is possible to prevent a reduction in the height of the crystal oscillator 1 regardless of the bonding method of the integrated circuit element 3. Further, according to the embodiment, since it can be used for the crystal oscillator 1 manufactured by various bonding methods, the crystal oscillator 1 can be mass-produced while reducing the manufacturing cost and suppressing the manufacturing time. Further, since the protection diode D6 is connected to the GND terminal 34 that originally does not require the protection diode, the oscillation circuit 6 can be easily changed by designing the wiring pattern as compared with the wiring pattern for providing the protection diode to other terminals. Can be formed.

  The base 4 is formed by stacking three base layers 43a to 43c, and the base layer 43c on which the integrated circuit element 3 is mounted is the lowermost layer. Therefore, a base layer is not provided to newly form a wiring pattern. It is possible to prevent the crystal oscillator 1 from being lowered. In particular, as shown in FIG. 1, the base 4 can have three layers (base layers 43 a, 43 b, 43 c), and the base 4 can be reduced in height.

  Further, the integrated circuit element 3 is bonded to the base 4 by the FCB method, so that a space for the wire Y is not provided in the internal space 11 compared to bonding of the integrated circuit element 3 to the base 4 by wire bonding. It is possible to prevent the crystal oscillator 1 from being lowered.

  In this embodiment, an AT-cut quartz crystal vibrating piece is used as the piezoelectric vibrating piece. However, the present invention is not limited to this, and for example, a tuning fork type quartz vibrating piece may be used.

  In this embodiment, the number of layers of the base 4 is three, but it is preferable that the number of layers is small.

  In this embodiment, quartz is used for the piezoelectric vibrating piece. However, the present invention is not limited to this, and other piezoelectric materials such as ceramic may be used.

In this embodiment, the GND terminal 34 is used as the GND terminal and the VDD terminal 35 is used as the VDD terminal. Alternatively, the GND terminal 34 and the VDD terminal 35 are changed and the GND terminal 34 is used as the VDD terminal 35. 35 is used as the GND terminal 34, but this is not limited to the above-described embodiment. The GND terminal 34 shown in FIG. 6 is used as the GND terminal and the VDD terminal 35 is used as the VDD terminal, or the GND terminal 34. And the VDD terminal 35 may be changed to provide selection means for selecting whether the GND terminal 34 is used as the VDD terminal 35 and whether the VDD terminal 35 is used as the GND terminal 34. The selection means shown in FIG. 6 is configured by providing two switch units S1 and S2 in the oscillation circuit. An oscillation circuit corresponding to both the bonding by wire bonding and the bonding by the FCB method can be configured by the switching operation of the switch portions S1 and S2. Further, when the switch units S1 and S2 are used as the selection means, the VDD terminal 35 and the GND terminal 34 can be changed not only in the manufacturing process of the integrated circuit element 3 but also after the manufacturing as described above. In FIG. 6, two switch units are provided, but the configuration and number of switch units can be arbitrarily set according to the application.

  It should be noted that the present invention can be implemented in various other forms without departing from the spirit or main features thereof. For this reason, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  This is useful for mass production of piezoelectric oscillators such as crystal oscillators.

FIG. 1 is a schematic exploded perspective view of a crystal oscillator according to the present embodiment, which employs a joining method based on the FCB method for joining bases of integrated circuit elements. FIG. 2 is a schematic configuration diagram of an integrated circuit element according to the present embodiment. FIG. 3 is a schematic circuit diagram of the oscillation circuit of the crystal oscillator shown in FIG. FIG. 5 is a schematic exploded perspective view of a crystal oscillator employing a bonding method by wire bonding for bonding of bases of integrated circuit elements according to the present embodiment. FIG. 5 is a schematic circuit diagram of the oscillation circuit of the crystal oscillator shown in FIG. FIG. 6 is a schematic circuit diagram of an oscillation circuit according to another example of the present embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Crystal oscillator 2 Crystal vibrating piece 3 Integrated circuit element 32, 33 XT terminal 34 GND terminal 35 V _DD terminal 4 Base 43a-43c Base layer 5 Lid 6 Oscillation circuit D1-D6 Protection diode

Claims (4)

In a method for manufacturing an oscillation circuit used in a piezoelectric oscillator,
A wiring pattern of the oscillation circuit including an earthed ground terminal, a power supply terminal for supplying power to the piezoelectric oscillator, and a piezoelectric vibrating reed terminal connected to a piezoelectric vibrating reed as an oscillating portion is formed on the oscillation electronic component. A wiring pattern forming process;
A connecting step of connecting a protective diode to each of the terminals;
In the wiring pattern forming step, the ground terminal is used as a ground terminal and the power supply terminal is used as a power supply terminal, or the ground terminal and the power supply terminal are changed and the ground terminal is used as a power supply terminal. And a selection step of selecting whether to use as a ground terminal. A method of manufacturing an oscillation circuit for use in a piezoelectric oscillator. An oscillation circuit used for a piezoelectric oscillator,
Including a grounded ground terminal, a power supply terminal for supplying power to the piezoelectric oscillator, and a piezoelectric vibrating reed terminal connected to a piezoelectric vibrating reed that is an oscillation unit,
A protection diode is connected to each of the terminals,
Using the ground terminal as a ground terminal, using the power supply terminal as a power supply terminal, or changing the ground terminal and the power supply terminal and using the ground terminal as a power supply terminal, using the power supply terminal as a ground terminal,
Whether to use the ground terminal as a ground terminal and the power supply terminal as a power supply terminal, or to change the ground terminal and the power supply terminal to use the ground terminal as a power supply terminal and to use the power supply terminal as a ground terminal. An oscillation circuit comprising a switch unit for selection . A piezoelectric oscillator comprising: a piezoelectric vibrating piece that is a vibrating portion mounted on a base; and an oscillation electronic component on which the oscillation circuit according to claim 2 is formed is hermetically sealed by a lid. . The base is formed by laminating a plurality of base layers,
4. The piezoelectric oscillator according to claim 3, wherein the base layer on which the oscillation electronic component is mounted is a lowermost layer .

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