JP4771893B2 - Substrate holding device - Google Patents
Substrate holding device Download PDFInfo
- Publication number
- JP4771893B2 JP4771893B2 JP2006227245A JP2006227245A JP4771893B2 JP 4771893 B2 JP4771893 B2 JP 4771893B2 JP 2006227245 A JP2006227245 A JP 2006227245A JP 2006227245 A JP2006227245 A JP 2006227245A JP 4771893 B2 JP4771893 B2 JP 4771893B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- valve
- surface plate
- vacuum
- state
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Coating Apparatus (AREA)
Description
本発明は、半導体ウェハやガラス基板等の各種基板を吸着保持する基板保持装置に関する。 The present invention relates to a substrate holding device that holds various substrates such as semiconductor wafers and glass substrates by suction.
ガラス基板を定盤上に載置し、真空吸着により定盤上に固定し、スリットノズルを走行させて基板表面上に塗布液を塗布するスリットコータが既知である（例えば、特許文献１参照）。この既知のスリットコータにおいては、吸引バキューム付きの定盤が用いられ、処理すべきガラス基板は真空吸着により定盤上に固定されている。そして、ガラス基板を定盤上に真空吸着した状態でスリットノズルを走行させて塗布が行われている。基板表面への塗布中に真空引きが継続して行われ、塗布処理が終了した後真空引きが停止し、パージガスが導入され、定盤から基板が取り外されている。 A slit coater is known in which a glass substrate is placed on a surface plate, fixed on the surface plate by vacuum suction, and a slit nozzle is run to apply a coating liquid onto the surface of the substrate (see, for example, Patent Document 1). . In this known slit coater, a surface plate with suction vacuum is used, and a glass substrate to be processed is fixed on the surface plate by vacuum suction. Then, application is performed by running the slit nozzle in a state where the glass substrate is vacuum-adsorbed on the surface plate. Vacuuming is continuously performed during coating on the substrate surface. After the coating process is completed, vacuuming is stopped, purge gas is introduced, and the substrate is removed from the surface plate.
上述したガラス基板を真空吸着により定盤上に保持する基板保持装置を用いるスリットコータにおいては、基板と定盤との間に強い真空吸着力が作用するため、ガラス基板は定盤上にほぼ完全に固定された状態で塗布が行われている。しかしながら、既知の基板保持装置を用いて塗布した場合、基板表面に形成された塗布膜の表面には、定盤の吸着孔及び吸着孔を連通させる溝と同一の形状のムラが形成される不具合が生じてしまう。塗布膜にムラが発生すると、その後行われる処理等において正確なパターンが形成されず、微細化の妨げになってしまう。 In a slit coater using a substrate holding device that holds the glass substrate on the surface plate by vacuum suction, a strong vacuum suction force acts between the substrate and the surface plate, so that the glass substrate is almost completely on the surface plate. Application is performed in a fixed state. However, when coating is performed using a known substrate holding device, the surface of the coating film formed on the surface of the substrate is formed with unevenness having the same shape as the suction holes of the surface plate and the grooves connecting the suction holes. Will occur. When unevenness occurs in the coating film, an accurate pattern is not formed in subsequent processing and the like, which hinders miniaturization.
また、スリットコータにおいては、スループットを改善する観点より、タクトタイムを短縮することも重要な課題となっている。しかし、塗布膜に生ずるムラの発生を抑制するため、定盤に形成されている吸着孔の直径が小さく設定されると共に溝の幅も狭く設定されており、このため真空引きに長時間必要とし、タクトタイムを短縮する妨げとなっていた。さらに、ムラの発生を抑制すくために、真空圧を弱めにして運用する手法もあるが、真空吸着に時間がかかってしまい、タクトを短縮する妨げとなっていた。 In the slit coater, shortening the tact time is also an important issue from the viewpoint of improving the throughput. However, in order to suppress the occurrence of unevenness in the coating film, the diameter of the suction holes formed in the surface plate is set to be small and the width of the groove is also set to be narrow. It was an obstacle to shortening the tact time. Furthermore, in order to suppress the occurrence of unevenness, there is a method of operating with a reduced vacuum pressure, but it takes time for vacuum suction, which hinders shortening tact.
本発明者が基板上の塗布膜に形成されるムラについて種々の実験及び解析を行った結果、定盤上に基板を吸着保持する際に発生する温度分布がムラの原因であることが判明した。すなわち、定盤上に基板を真空吸着させると、基板と定盤の表面とが密着し、基板と定盤の表面とが直接接触する。このため、基板と定盤との間に温度差が存在すると、基板側から定盤側へ又は定盤側から基板側へ直接熱伝導が行われる。この結果、例えば基板の温度が定盤の温度よりも高い場合、基板と定盤とが直接接触する部位において基板側から定盤側へ熱伝導が生じ、当該部位の基板の温度は低下する。 As a result of various experiments and analysis on the unevenness formed on the coating film on the substrate by the present inventor, it was found that the temperature distribution generated when the substrate is sucked and held on the surface plate is the cause of the unevenness. . That is, when the substrate is vacuum-adsorbed on the surface plate, the substrate and the surface of the surface plate are brought into close contact with each other, and the substrate and the surface of the surface plate are in direct contact with each other. For this reason, if a temperature difference exists between the substrate and the surface plate, heat conduction is performed directly from the substrate side to the surface plate side or from the surface plate side to the substrate side. As a result, for example, when the temperature of the substrate is higher than the temperature of the surface plate, heat conduction occurs from the substrate side to the surface plate side at the portion where the substrate and the surface plate are in direct contact, and the temperature of the substrate at that portion decreases.
一方、定盤の吸着孔や溝が形成されている部位は、真空状態にあり、熱伝達媒体が存在せず、基板と定盤との間に熱伝導はほとんど生じない。この結果、基板と定盤との間に温度差が形成され、例えば基板の温度が定盤の温度よりも高い場合であっても基板側から定盤側へ熱移伝達が起こらず、当該部位の温度は周囲の温度よりも高い状態に維持され、温度分布が形成されてしまう。この温度分布が、基板の反対側の表面まで伝達され、基板の反対側の表面上に形成された塗布膜に対して蒸発速度差となって出現し、ムラが発生するものと解される。 On the other hand, the portion of the platen where the suction holes and grooves are formed is in a vacuum state, there is no heat transfer medium, and little heat conduction occurs between the substrate and the platen. As a result, a temperature difference is formed between the substrate and the surface plate. For example, even when the temperature of the substrate is higher than the temperature of the surface plate, heat transfer does not occur from the substrate side to the surface plate side. This temperature is maintained higher than the ambient temperature, and a temperature distribution is formed. It is understood that this temperature distribution is transmitted to the surface on the opposite side of the substrate, appears as an evaporation rate difference with respect to the coating film formed on the surface on the opposite side of the substrate, and unevenness occurs.
本発明は上述した解析結果に基づいており、基板に対する所定の処理が行われる間に温度分布が形成されないようにする。
即ち、本発明は、基板を吸着保持する載置面に複数の吸着孔が開口する基板保持装置において、一端側において前記載置部の吸着孔と連通し他端側において真空源と連通する真空バルブと、一端側において前記載置部の吸着孔と連通し他端側において大気と連通する大気開放バルブと、前記真空バルブ及び前記大気開放バルブの開閉を制御するバルブ制御装置とを備えた構成とした。
The present invention is based on the analysis result described above, and prevents a temperature distribution from being formed while a predetermined process is performed on the substrate.
That is, according to the present invention, in a substrate holding apparatus in which a plurality of suction holes are opened on a mounting surface for sucking and holding a substrate, a vacuum communicating with the suction hole of the mounting portion on one end side and communicating with a vacuum source on the other end side. A configuration comprising a valve, an air release valve that communicates with the suction hole of the mounting portion on one end side and communicates with the atmosphere on the other end side, and a valve control device that controls opening and closing of the vacuum valve and the air release valve It was.
ところで、定盤上に基板を真空吸着させると、基板は定盤上に強固に密着し、定盤と基板との間に強い密着力が作用する。この密着力が作用するため、定盤の吸着孔を大気状態に遷移させても、基板は定盤上に密着した状態に維持される。そこで、本発明では、吸着孔の真空度が所定の真空度に到達したことが検知された後、大気バルブを開放状態に移行させて、吸着孔を真空状態から大気状態に遷移させ、大気状態において塗布等の各種の処理を実行する。所定の処理が終了した後、大気バルブを開放状態から閉成状態に移行させると共にパージガスバルブを開放状態に移行させて基板を定盤から剥離する。 By the way, when the substrate is vacuum-sucked on the surface plate, the substrate firmly adheres to the surface plate, and a strong adhesion force acts between the surface plate and the substrate. Since this adhesion force acts, even if the suction hole of the surface plate is changed to the atmospheric state, the substrate is maintained in close contact with the surface plate. Therefore, in the present invention, after detecting that the degree of vacuum of the adsorption hole has reached a predetermined degree of vacuum, the atmospheric valve is shifted to the open state, and the adsorption hole is changed from the vacuum state to the atmospheric state, and the atmospheric state Various processes such as coating are executed in step. After the predetermined processing is completed, the atmospheric valve is shifted from the open state to the closed state, and the purge gas valve is shifted to the open state to peel the substrate from the surface plate.
本発明では、基板が定盤上に吸着保持された後、吸着孔及び吸着孔間を連通させる溝を大気状態に移行させ、大気状態において各種処理が行われるため、基板と定盤との間に温度差が存在しても、基板に温度分布が発生する不具合が防止される。 In the present invention, after the substrate is sucked and held on the surface plate, the suction hole and the groove communicating between the suction holes are shifted to the atmospheric state, and various processes are performed in the atmospheric state. Even if there is a temperature difference, a problem that temperature distribution occurs on the substrate is prevented.
本発明による基板保持装置を用いれば、基板と定盤との間に存在する温度差に起因する不具合が解消されるため、吸着孔の直径を大きくすることができると共に吸着孔を連通する溝の幅も大きくすることが可能である。この結果、真空引きに要する時間が短縮され、タクトタイムが短縮される効果が達成される。 If the substrate holding device according to the present invention is used, problems caused by the temperature difference existing between the substrate and the surface plate are eliminated, so that the diameter of the suction holes can be increased and the grooves communicating with the suction holes can be increased. The width can also be increased. As a result, the time required for evacuation is shortened, and the effect of shortening the tact time is achieved.
また本発明に係る装置を用いた基板保持方法としては、例えば、前記載置部に基板が載置された際、前記吸着孔を真空引きする工程と、前記吸着孔が所定の真空状態に達したことを検知して真空引きを停止する工程と、前記吸着孔を大気に開放する工程とを含む。 Further, as a substrate holding method using the apparatus according to the present invention, for example, when the substrate is placed on the mounting portion, the suction hole is evacuated, and the suction hole reaches a predetermined vacuum state. A step of detecting the fact that the evacuation is stopped and a step of opening the suction hole to the atmosphere.
本発明による基板処理装置では、定盤の吸着孔が大気状態に維持されている間に基板に対して所定の処理が行われるため、基板と定盤との間に温度差が存在しても、熱伝達効率の悪い空気が介在するので、定盤と基板との間においてほぼ均一な熱の流入が確保され、基板に温度分布が形成される不具合が防止される。 In the substrate processing apparatus according to the present invention, a predetermined process is performed on the substrate while the suction holes of the surface plate are maintained in the atmospheric state, so that even if there is a temperature difference between the substrate and the surface plate. Since air with poor heat transfer efficiency is interposed, a substantially uniform heat inflow is ensured between the surface plate and the substrate, and a problem that a temperature distribution is formed on the substrate is prevented.
本発明では、真空吸着により基板が定盤上に吸着保持されるが、所定の処理が行われる間に定盤の吸着孔が大気状態にあるため、本発明を塗布装置に適用した場合、基板に温度分布が形成されないため、温度分布に起因する塗布ムラの発生が有効に防止され、しかもタクトタイムも短縮される。 In the present invention, the substrate is sucked and held on the surface plate by vacuum suction. However, since the suction holes of the surface plate are in the atmospheric state while the predetermined processing is performed, the substrate is applied when the present invention is applied to a coating apparatus. Therefore, the occurrence of coating unevenness due to the temperature distribution is effectively prevented, and the tact time is shortened.
以下に本発明の好適な実施例を添付図面に基づいて説明する。図１（Ａ）はは本発明に係る基板保持装置の要部拡大断面図、(Ｂ)は基板載置面の一部拡大平面図であり、本例では、スリットノズルを用いてガラス基板上に塗布するスリットコータの基板保持装置について説明する。 Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. FIG. 1A is an enlarged cross-sectional view of a main part of a substrate holding device according to the present invention, and FIG. 1B is a partially enlarged plan view of a substrate mounting surface. In this example, a slit nozzle is used on a glass substrate. The substrate holding device of the slit coater applied to the substrate will be described.
基板保持装置の載置部である定盤１上に基板２を載置し、真空吸着により基板２を定盤１上に吸着保持する。定盤１の基板載置面には、互いに直交する多数の溝１ａが形成され、各溝の交点に吸着孔１ｂを2次元マトリックス状に形成する。吸着孔の直径は従来の吸着孔径よりも大きくなるように、例えば１．０ｍｍ〜３．０ｍｍの範囲に設定する。また、各吸着孔間を連通させる溝の幅も従来の溝幅（０．２ｍｍ）よりも広く、例えば０．５ｍｍ以上に設定する。このように、吸着孔の径及び吸着孔を連通させる溝の幅を広く設定することにより、吸着孔を所定の真空度まで真空引きするのに要する時間が短縮され、タクトタイムが短縮される。 The substrate 2 is placed on the surface plate 1 which is a placement portion of the substrate holding device, and the substrate 2 is sucked and held on the surface plate 1 by vacuum suction. A plurality of grooves 1a orthogonal to each other are formed on the substrate mounting surface of the surface plate 1, and suction holes 1b are formed in a two-dimensional matrix at the intersections of the grooves. The diameter of the suction hole is set, for example, in the range of 1.0 mm to 3.0 mm so as to be larger than the conventional suction hole diameter. Further, the width of the groove communicating between the suction holes is also set wider than the conventional groove width (0.2 mm), for example, 0.5 mm or more. Thus, by setting the diameter of the suction hole and the width of the groove communicating with the suction hole, the time required for evacuating the suction hole to a predetermined degree of vacuum is shortened, and the tact time is shortened.
定盤１には、溝１ａ及び吸着孔１ｂと連通する流路孔１ｃが形成され、当該流路孔１ｃをシーリング３を介して導管４に接続する。導管４は３つに分岐し、真空バルブ５を介して真空源に連通し、大気開放バルブ６を介して大気に連通し、パージガスバルブ７を介してパージガス源に連通する。３つのバルブ５〜７は、バルブ制御装置８から供給される制御信号により開閉制御される。尚、制御装置８は、バルブの開閉制御を行うだけでなく、塗布機構等の他の要素の制御も行うことができる。尚、流路孔１ｃに真空検知手段（図示せず）を設け、吸着孔及び溝が所定の真空状態にあるか否かを検知し、その検知信号をバルブ制御装置８に供給する。 A flow path hole 1 c communicating with the groove 1 a and the suction hole 1 b is formed in the surface plate 1, and the flow path hole 1 c is connected to the conduit 4 through the sealing 3. The conduit 4 branches into three, communicates with the vacuum source via the vacuum valve 5, communicates with the atmosphere via the atmosphere release valve 6, and communicates with the purge gas source via the purge gas valve 7. The three valves 5 to 7 are controlled to open and close by a control signal supplied from the valve control device 8. The control device 8 can control not only the opening / closing of the valve but also other elements such as the coating mechanism. In addition, a vacuum detection means (not shown) is provided in the flow path hole 1c to detect whether or not the suction hole and the groove are in a predetermined vacuum state, and supply the detection signal to the valve control device 8.
大気開放バルブ６及びパージガスバルブ７を閉成状態に維持し、真空バルブ５を閉成状態から開放状態に移行させると、定盤の溝１ａ及び吸着孔１ｂは大気状態から徐々に真空状態に移行する。吸着孔及び溝が真空状態になると、大気圧により基板の表面と定盤の表面とが密着し、相互に強い密着力が作用する。この密着力について、本発明者が種々の実験を行なった結果、吸着孔が所定の真空状態になると、吸着孔及び溝を大気状態に移行させても、基板と定盤との間に相互に作用する密着力により、基板は定盤上に強固に固定され、外力により基板が変位しないことが判明した。この実験結果に基づき、本発明では、吸着孔及び溝を一定の真空状態に遷移させて基板を定盤上に密着させた後、真空バルブを閉成状態に移行させると共に大気開放バルブを開放する。そして、定盤の吸着孔及び溝を大気状態に移行させ、定盤上に基板が密着した状態において各種の処理を行う。従って、処理中においては、定盤の吸着孔及び溝は空気が充満した状態にあるため、これらの部位において、基板表面と定盤表面との間に生ずる熱伝導とほぼ同等な熱伝導が確保され、基板に不所望な温度分布が形成される不具合が解消される。 When the air release valve 6 and the purge gas valve 7 are kept closed and the vacuum valve 5 is changed from the closed state to the open state, the groove 1a and the suction hole 1b of the surface plate gradually change from the atmospheric state to the vacuum state. To do. When the suction holes and grooves are in a vacuum state, the surface of the substrate and the surface of the surface plate are brought into close contact with each other due to atmospheric pressure, and a strong adhesive force acts on each other. As a result of various experiments conducted by the present inventor on the adhesion force, when the suction hole is in a predetermined vacuum state, even if the suction hole and the groove are moved to the atmospheric state, the mutual contact between the substrate and the surface plate is achieved. It was found that the substrate was firmly fixed on the surface plate by the acting adhesion force, and the substrate was not displaced by the external force. Based on the results of this experiment, in the present invention, the suction holes and grooves are changed to a certain vacuum state and the substrate is brought into close contact with the surface plate, and then the vacuum valve is moved to the closed state and the atmosphere release valve is opened. . Then, the suction holes and grooves of the surface plate are moved to the atmospheric state, and various processes are performed in a state where the substrate is in close contact with the surface plate. Therefore, during processing, the suction holes and grooves on the surface plate are filled with air, so heat conduction almost equal to that generated between the substrate surface and the surface of the surface plate is secured at these locations. This eliminates the problem that an undesirable temperature distribution is formed on the substrate.
図２は基板と定盤との間の熱伝導の形態を説明した図であり、（Ａ）は真空引きを行ないながらスリットコータにより塗布を行った場合の熱伝導の状態を模式的に示し、（Ｂ）は吸着孔が真空状態に遷移した後大気と連通した状態で塗布処理が行われる場合の熱伝導の状態を模式的に示す。 FIG. 2 is a diagram for explaining the form of heat conduction between the substrate and the surface plate, (A) schematically shows the state of heat conduction when coating is performed by a slit coater while evacuating, (B) schematically shows a state of heat conduction in a case where the coating process is performed in a state where the suction holes are communicated with the atmosphere after transition to the vacuum state.
従来の基板保持装置のように、真空引きを行ないながら塗布処理を行う場合、吸着孔及び溝内は真空状態にあるため、図２（Ａ）に示すように、これらの部位において基板と定盤とは密着して間には熱伝達媒体が存在せず、局所的に断熱状態となる。このため、基板と定盤との間に温度差が存在しても、基板と定盤との間において熱の授受はほとんど行われない。一方、基板と定盤とが相互に密着した部位においては、熱伝導が発生し易い状態にあり、基板と定盤との間に温度差がある場合、温度差に応じて熱の流入が発生する。この熱の流入により、例えば基板の温度が定盤の温度よりも低い場合、定盤側から基板側へ熱の流入が発生し、基板の定盤と密着した部位の温度高くなる。一方、定盤の吸着孔及び溝が形成されている部位においては、熱の流入がほとんど発生しないため、当該部位の温度は変化せず、この結果基板に温度分布が発生してしまう。 When the coating process is performed while evacuating as in the conventional substrate holding apparatus, the suction holes and the grooves are in a vacuum state, and as shown in FIG. There is no heat transfer medium between them and they are locally insulative. For this reason, even if there is a temperature difference between the substrate and the surface plate, heat is hardly exchanged between the substrate and the surface plate. On the other hand, where the substrate and the surface plate are in close contact with each other, heat conduction is likely to occur, and when there is a temperature difference between the substrate and the surface plate, heat flows in according to the temperature difference. To do. For example, when the temperature of the substrate is lower than the temperature of the surface plate due to the inflow of heat, inflow of heat from the surface plate side to the substrate side occurs, and the temperature of the portion in close contact with the surface plate of the substrate becomes high. On the other hand, in the part where the suction holes and grooves of the surface plate are formed, almost no inflow of heat occurs, so the temperature of the part does not change, and as a result, a temperature distribution occurs on the substrate.
発生した温度分布は、基板２に形成された塗布膜１０にまで伝達され、塗布膜１０に温度分布がそのまま形成され、当該温度分布に起因して塗布膜中の溶剤の蒸発速度が相違し、その結果塗布膜にムラが発生する。 The generated temperature distribution is transmitted to the coating film 10 formed on the substrate 2, the temperature distribution is formed as it is in the coating film 10, and the evaporation rate of the solvent in the coating film is different due to the temperature distribution, As a result, unevenness occurs in the coating film.
一方、図２（Ｂ）に示すように、吸着孔が大気状態にあると、吸着孔及び溝は空気が充満し、更に基板２と定盤１上面との間に空気が入り込み、熱の伝達が阻害された状態となる。従って、基板と定盤との間に温度差があっても熱が伝わりにくくなる。例えば、定盤の温度が基板の温度よりも高い場合、定盤側から空気を介して基板側へ熱が伝わろうとするが、空気層を介在しているのでほぼ均等な熱伝達が行われ、基板に温度分布が発生する不具合が解消される。 On the other hand, as shown in FIG. 2B, when the suction hole is in the atmospheric state, the suction hole and the groove are filled with air, and further, air enters between the substrate 2 and the upper surface of the surface plate 1 to transfer heat. Is in an inhibited state. Therefore, even if there is a temperature difference between the substrate and the surface plate, heat is hardly transmitted. For example, when the temperature of the surface plate is higher than the temperature of the substrate, heat is transmitted from the surface plate side to the substrate side via air, but since an air layer is interposed, almost uniform heat transfer is performed, The problem of temperature distribution on the substrate is eliminated.
このような解析結果に基づき、本発明では、基板を定盤上に真空吸着した後、吸着孔を大気状態に遷移させ、その状態で塗布液の塗布等の各種の処理を行ない、基板と定盤との間の温度差に起因する不具合を解消する。 Based on such analysis results, in the present invention, after the substrate is vacuum-adsorbed on the surface plate, the suction hole is changed to the atmospheric state, and various processes such as application of the coating liquid are performed in that state, and the substrate is fixed. Eliminate problems caused by temperature differences from the panel.
図３は本発明による基板保持装置をスリットコータに搭載した場合の３つのバルブの制御を示すタイムチャートである。待機状態において、真空バルブ５、大気開放バルブ６及びパージガスバルブ７は閉成状態に設定されている。 FIG. 3 is a time chart showing the control of three valves when the substrate holding apparatus according to the present invention is mounted on a slit coater. In the standby state, the vacuum valve 5, the atmosphere release valve 6, and the purge gas valve 7 are set in a closed state.
定盤１上に基板２が載置されると、制御装置８は、真空バルブ５を閉成状態から開放状態に移行するように制御する。この間、約３秒間で所定の真空度に到達する。 When the substrate 2 is placed on the surface plate 1, the control device 8 controls the vacuum valve 5 to shift from the closed state to the open state. During this time, a predetermined degree of vacuum is reached in about 3 seconds.
真空検知手段が吸着孔内の真空度が予め定めた真空状態に遷移したことを検知すると、約１秒後に大気開放バルブ６が閉成状態から開放状態に移行する。ほぼ同時に、スリットノズルが移動を開始し、約１５秒間の塗布処理が行われる。 When the vacuum detection means detects that the degree of vacuum in the suction hole has shifted to a predetermined vacuum state, the atmosphere release valve 6 shifts from the closed state to the open state after about 1 second. At almost the same time, the slit nozzle starts to move and the coating process is performed for about 15 seconds.
塗布処理が完了すると、大気開放バルブ６は開放状態から閉成状態へ移行する。ほぼ同時に、パージガスバルブ７が閉成状態から開放状態に移行し、ガラス基板が定盤から剥離される。次に、リフトピンが動作し、定盤から完全に離間し、ロボットのハンドリング処理により別の位置に搬送され、処理は終了する。 When the coating process is completed, the atmosphere release valve 6 shifts from the open state to the closed state. At substantially the same time, the purge gas valve 7 shifts from the closed state to the open state, and the glass substrate is peeled off from the surface plate. Next, the lift pin is operated, completely separated from the surface plate, and transported to another position by the handling process of the robot, and the process ends.
尚、基板への塗布処理に先立って行われる各種の前処理、例えばスリットノズルからプライミングローラへの予備吐出やビードの形成等は、真空引き中（真空バルブが開放状態にある）に或いは大気開放バルブが開放状態に移行する前に行うことができる。 Various pre-treatments that are performed prior to the coating process on the substrate, such as preliminary ejection from the slit nozzle to the priming roller and bead formation, are performed during evacuation (the vacuum valve is open) or open to the atmosphere. This can be done before the valve enters the open state.
図４は別実施例に係るバルブの制御動作を示すタイムチャートであり、この実施例にあっては、大気開放バルブ６の開放状態の後半部分とパージガスバルブ７の開放状態とがオーバーラップするようにしている。このようにすることで、タクトタイムを早めることができる。 FIG. 4 is a time chart showing the control operation of the valve according to another embodiment. In this embodiment, the latter half of the open state of the atmosphere release valve 6 and the open state of the purge gas valve 7 are overlapped. I have to. By doing so, the tact time can be shortened.
本発明は上述した実施例だけに限定されず、種々の変形や変更が可能である。例えば、上述した実施例では、本発明による基板保持装置をスリットコータに搭載した例について説明したが、基板と定盤との温度差に起因して不具合を発生する種々の基板処理装置についても適用することが可能である。 The present invention is not limited to the above-described embodiments, and various modifications and changes can be made. For example, in the above-described embodiment, the example in which the substrate holding device according to the present invention is mounted on the slit coater has been described. However, the present invention is also applicable to various substrate processing apparatuses that cause problems due to a temperature difference between the substrate and the surface plate. Is possible.
また、上述した実施例では、大気開放バルブを開放状態から閉成状態に移行させてからパージガスバルブを閉成状態から開放状態に移行させたが、大気開放バルブが開放状態に維持された状態でパージガスバルブを開放状態に移行させてもよい。 Further, in the above-described embodiment, the purge gas valve is shifted from the closed state to the open state after the atmospheric release valve is shifted from the open state to the closed state, but the atmospheric release valve is maintained in the open state. The purge gas valve may be shifted to an open state.
１…定盤、２…基板、３…シーリング、４…導管、５…真空バルブ、６…大気開放バルブ、７…パージガスバルブ、８…バルブ制御装置。 DESCRIPTION OF SYMBOLS 1 ... Surface plate, 2 ... Board | substrate, 3 ... Sealing, 4 ... Conduit, 5 ... Vacuum valve, 6 ... Atmospheric release valve, 7 ... Purge gas valve, 8 ... Valve control apparatus.
Claims (4)
前記バルブ制御装置は、前記載置面上に基板が載置された際に前記真空バルブを閉成状態から開放状態へ移行させると共に、前記吸着孔が所定の真空状態になったことが検知された後に前記真空バルブを開放状態から閉成状態へ移行させるように制御し、また、前記真空バルブが開放状態から閉成状態に移行した後に、前記大気開放バルブを閉成状態から開放状態に移行させるように制御し、この大気開放バルブが開放状態にあるときに塗布などの処理を行うことを特徴とする基板保持装置。 A substrate holding device having a plurality of suction holes opened on a mounting surface for sucking and holding a substrate, the substrate holding device communicating with the suction hole of the mounting portion on one end side and communicating with a vacuum source on the other end side. A vacuum valve that communicates with the suction hole of the mounting portion on one end side and communicates with the atmosphere on the other end side, and a valve control device that controls opening and closing of the vacuum valve and the air release valve. ,
The valve controller shifts the vacuum valve from the closed state to the open state when the substrate is placed on the mounting surface, and detects that the suction hole is in a predetermined vacuum state. After that, the vacuum valve is controlled to shift from the open state to the closed state, and after the vacuum valve shifts from the open state to the closed state, the atmosphere release valve shifts from the closed state to the open state. And a substrate holding device that performs processing such as coating when the air release valve is in an open state .
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006227245A JP4771893B2 (en) | 2006-08-24 | 2006-08-24 | Substrate holding device |
| TW096119595A TW200816358A (en) | 2006-08-24 | 2007-05-31 | Board retainer |
| CNB2007101452754A CN100521144C (en) | 2006-08-24 | 2007-08-17 | Substrate holding device |
| KR1020070083176A KR100906554B1 (en) | 2006-08-24 | 2007-08-20 | Board Retainer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006227245A JP4771893B2 (en) | 2006-08-24 | 2006-08-24 | Substrate holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008053391A JP2008053391A (en) | 2008-03-06 |
| JP4771893B2 true JP4771893B2 (en) | 2011-09-14 |
Family
ID=39129152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006227245A Expired - Fee Related JP4771893B2 (en) | 2006-08-24 | 2006-08-24 | Substrate holding device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4771893B2 (en) |
| KR (1) | KR100906554B1 (en) |
| CN (1) | CN100521144C (en) |
| TW (1) | TW200816358A (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5210060B2 (en) * | 2008-07-02 | 2013-06-12 | 東京応化工業株式会社 | Peeling apparatus and peeling method |
| CN102179881A (en) * | 2011-04-01 | 2011-09-14 | 石金精密科技（深圳）有限公司 | System for adsorbing and fixing plane thin plate |
| CN102496587B (en) * | 2011-11-25 | 2014-06-11 | 清华大学 | Wafer in-situ detecting device and wafer in-situ detecting method |
| CN102496595B (en) * | 2011-11-25 | 2014-06-11 | 清华大学 | Wafer bracket, wafer exchange device and wafer on-site detection method |
| JP6057599B2 (en) * | 2012-08-09 | 2017-01-11 | タツモ株式会社 | Adsorption surface plate and manufacturing method thereof |
| TW201509544A (en) * | 2013-09-05 | 2015-03-16 | Rich Chen Automatically Controlled Co Ltd | Substrate coating device and coating method |
| CN106853432B (en) * | 2016-11-24 | 2019-04-16 | 重庆市永川区锐峰玻璃制品有限公司 | Rotating gluing coating platform |
| CN110124908B (en) * | 2019-06-21 | 2021-09-07 | 北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所） | Wafer vacuum adsorption device |
| CN111132539A (en) * | 2020-01-17 | 2020-05-08 | 安徽博微长安电子有限公司 | Tool and method for nondestructive mounting of chip in gel box by manual dispensing chip mounter |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2880264B2 (en) * | 1990-07-12 | 1999-04-05 | キヤノン株式会社 | Substrate holding device |
| JPH08125000A (en) * | 1994-10-24 | 1996-05-17 | Nec Kyushu Ltd | Wafer chuck |
| JPH0927541A (en) * | 1995-07-10 | 1997-01-28 | Nikon Corp | Board holder |
| JPH0945755A (en) * | 1995-07-26 | 1997-02-14 | Hitachi Ltd | Wafer chuck and wafer suction method |
| JP2003023060A (en) * | 2001-07-10 | 2003-01-24 | Shimadzu Corp | Hanging type substrate holding device and liquid crystal panel manufacturing device |
-
2006
- 2006-08-24 JP JP2006227245A patent/JP4771893B2/en not_active Expired - Fee Related
-
2007
- 2007-05-31 TW TW096119595A patent/TW200816358A/en unknown
- 2007-08-17 CN CNB2007101452754A patent/CN100521144C/en active Active
- 2007-08-20 KR KR1020070083176A patent/KR100906554B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR100906554B1 (en) | 2009-07-07 |
| TW200816358A (en) | 2008-04-01 |
| JP2008053391A (en) | 2008-03-06 |
| CN100521144C (en) | 2009-07-29 |
| KR20080018808A (en) | 2008-02-28 |
| TWI360195B (en) | 2012-03-11 |
| CN101131954A (en) | 2008-02-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100906554B1 (en) | Board Retainer | |
| TWI529848B (en) | Bonding device and joining processing method | |
| KR100767001B1 (en) | Apparatus for dry treating substrates and method of dry treating substrates | |
| JP6633175B2 (en) | Substrate holding device and elastic film | |
| JP2006181641A (en) | Bonding apparatus and bonding method | |
| CN101490835B (en) | Suction holding device and suction holding method | |
| WO2006080290A1 (en) | Cooling treatment device | |
| JP2004083180A (en) | Transfer device and transfer method for sheet-like substrate | |
| TW202015155A (en) | Substrate carrier device and method | |
| JP2008028208A (en) | Board bonding equipment | |
| WO2013183437A1 (en) | Gas treatment method | |
| WO2006040848A1 (en) | Tape bonding device and tape bonding method | |
| JP2017166802A (en) | Vacuum drying method and vacuum drying apparatus | |
| CN111213227A (en) | Method and apparatus for processing substrates | |
| JP6120749B2 (en) | Joining method, program, computer storage medium, joining apparatus and joining system | |
| JP2004231331A (en) | Substrate transfer method and substrate transfer device | |
| JP4459023B2 (en) | Substrate holding device | |
| JP2019005683A (en) | Substrate processing apparatus and substrate processing method | |
| WO2017135018A1 (en) | Reduced-pressure drying device and reduced-pressure drying method | |
| JP2975097B2 (en) | Vacuum piping of vacuum suction substrate holding device | |
| JP4457351B2 (en) | Substrate holding device | |
| JPH06252183A (en) | Semiconductor chip mounting stage | |
| JP2000150368A (en) | Gas processing method and apparatus | |
| KR102924214B1 (en) | Apparatus and method for processing substrate | |
| JP3929287B2 (en) | Planar transport mechanism and thin film forming apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090604 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100528 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110329 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110526 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110621 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110621 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140701 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4771893 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |