JP4774966B2 - Semiconductor photo detector - Google Patents

Description

  The present invention relates to a semiconductor light receiving element applied to devices such as optical communication, optical information processing, and optical measurement, and more specifically, a semiconductor characterized in that light is received at high speed without reducing optical coupling efficiency. The present invention relates to a light receiving element.

  In the fields of optical communication, optical information processing, optical measurement, and the like, semiconductor light receiving elements are applied as photoelectric conversion elements.

  InGaAsP system lattice-matched on InP substrate in optical communication wavelength band of 1 μm or more, and AlGaAs system lattice-matched on Si system or GaAs substrate in optical communication wavelength band of 1 μm or less, which is used for optical information processing and data communication, etc. Is the main.

FIG. 11 shows a basic structure of a surface incident type InGaAsP semiconductor light-receiving element having a conventional structure. On the InP substrate 111, a lattice-matched i-type InGaAs light absorption layer 112 and a p-type InP window layer 114 are formed. The incident signal light is absorbed by the light absorption layer, converted into optical carriers (electron / hole pairs), and taken out by drift traveling by an external electric field. Here, the high frequency band fc of the light receiving element is expressed by Equation 1 in consideration of the carrier travel time and the CR circuit constant.

  t is the thickness of the light absorption layer, v is the average velocity of the optical carrier, C is the element capacitance, and R is the load resistance. Therefore, it is necessary to reduce the thickness of the light absorption layer or reduce the capacity in order to increase the speed. However, in general, reducing the thickness of the light absorption layer means reducing the depletion thickness, leading to an increase in capacity, and further leading to a decrease in quantum efficiency. FIG. 12 shows a predicted high frequency band fc with respect to the light receiving diameter (pn junction diameter) of the semiconductor light receiving element (corresponding to FIG. 11), and uses the i-type InGaAs light absorption layer thickness t as a parameter. Here, although the high frequency band deteriorates due to the increase in the light receiving diameter, the time during which the absorption layer of the optical carrier travels when the light receiving diameter is 30 μm or less, and the CR constant is the rate determining factor when the light receiving diameter is 30 μm or more. As a result, in order to receive a high-speed optical signal, it is only necessary to reduce the diameter of the received light. In order to increase the light receiving diameter, it is necessary to devise a technique for reducing the increase in junction capacity due to the expansion under the optimization of the absorption layer thickness.

A metal Schottky metal (MSM) type structure or a selective diffusion type structure (for example, Patent Document 1) has been proposed as a semiconductor light receiving element for the purpose of reducing the element capacitance. FIG. 13 shows an MSM type semiconductor light receiving element. In the structure of the n − type InP substrate 131 and the i − type InGaAs light absorption layer 132, a comb electrode region (light receiving region) 135 having a Schottky junction is formed. Here, the element capacitance is reduced because it is defined by the Schottky junction, but the light receiving region is exposed to the comb-shaped electrode, so that there is a problem that the surface incident structure is shielded and sufficient optical coupling efficiency cannot be obtained. FIG. 14 shows the latter selective diffusion type semiconductor light receiving element. In the semiconductor light receiving element, in the structure of the n (+) − type semiconductor layer 141 and the n− type semiconductor light absorption layer 142, the p− type semiconductor light absorption layer 143 is formed by selective diffusion. In this structure, the pn junction area is partially formed by selective diffusion, so that the pn junction area is reduced and the capacitance reduction effect is expected. It cannot be reduced.
JP 61-182274 A

  In apparatuses such as optical communication, optical information processing, and optical measurement, optimum design of a semiconductor light receiving element is required according to a high frequency band and an optical coupling method. Especially in recent optical communication systems, the application of multimode fiber (MMF) has started from the viewpoint of cost reduction even in a high-speed region exceeding 20 Gbps. It is being considered. In this case, the light receiving diameter for obtaining optical coupling with the MMF having a wide propagation beam diameter is required to be 50 μm or more, but the light receiving diameter limit from the high frequency band (20 Gbps) is 30 μm, and both the optical coupling efficiency and the band are compatible. I can't. In order to obtain sufficient performance in the application of MMF, it is important to reduce the element capacitance and increase the light receiving diameter. Also, in an optical pickup such as a DVD, an IC amplifier having a high input resistance (up to several kilo ohms) is connected to the subsequent stage of the semiconductor light receiving element (Si system) in order to increase the photoelectric conversion efficiency (V / W). Yes. For this reason, in order to obtain a high frequency band of several hundred MHz required for the system, the semiconductor light receiving element is required to have an excessive capacity reduction. Therefore, there is a demand for a high-performance semiconductor light receiving element with reduced element capacity in apparatuses such as optical communication, optical information processing, and optical measurement.

To solve the above problems, a semiconductor light receiving device according to claim 1 of the present invention is a semiconductor light receiving element formed by laminating a semiconductor optical absorption layer and a semiconductor layer on a semiconductor substrate, wherein said semiconductor light absorption layer semiconductor A light receiving region having a conductivity type different from that of the layer and having a plurality of aperture regions reaching from the semiconductor layer to the semiconductor light absorption layer, the aperture diameter of the aperture region at the center of the light receiving region The opening diameter of the opening region at the end of the is increased .

The semiconductor light-receiving element according to claim 2 of the present invention is a semiconductor light-receiving element formed by laminating a semiconductor light absorption layer and a semiconductor layer on a semiconductor substrate, and the semiconductor light absorption layer is interposed between the semiconductor light absorption layer and the semiconductor layer. An aperture diameter of the aperture region in the center of the light-receiving region, having a plurality of aperture regions from the semiconductor layer to the semiconductor layer window layer with a semiconductor window layer having a conductivity type different from that of the semiconductor layer interposed The opening diameter of the opening area at the end of the light receiving area is larger than that .

The semiconductor light-receiving element according to claim 3 of the present invention is the semiconductor light-receiving element according to claim 1 or 2 , wherein the aperture region has a circular shape, an elliptical shape, or a polygonal shape. Features.

A semiconductor light-receiving element according to a fourth aspect of the present invention is the semiconductor light-receiving element according to any one of the first to third aspects, wherein the semiconductor constitutes the semiconductor absorption layer, the semiconductor layer, and the semiconductor window layer. It is characterized in that the material is In, Al, Ga, As, P, N, Sb, Si, Ge, Hg, Cd, Te, Zn, S, O, Fe, Cu, Se.

An optical communication, optical information processing, and optical measurement device according to a fifth aspect of the present invention includes the semiconductor light receiving element according to any one of the first to fourth aspects.

  According to the semiconductor light receiving element of the present invention, it is possible to receive light in a wide band without losing the coupling with the multimode fiber or the like in an optical communication device or the like of 10 Gbps or more. In addition, even in optical information processing such as DVD, a response of several hundred MHz can be achieved without reducing the light receiving area of the Si-based PD. This is because by providing a plurality of aperture regions across the pn junction in the light receiving surface, the effective pn junction area is reduced and the capacitance can be reduced.

  In addition, light can be received with high efficiency. This is because the effect of surface recombination or the like can be reduced by providing the semiconductor window layer directly under the opening region.

  Furthermore, the response characteristic with respect to a high input optical signal is improved. This is because the influence of the electric field drop phenomenon can be reduced by changing the aperture region width in accordance with the optical signal intensity distribution in the light receiving surface.

  As described above, according to the present invention, the PIN type structure having the surface as the p layer is basically described, but these inventive ideas are inherited even in the NIP type structure of the surface n layer which is the reverse structure. Moreover, although the shape of the aperture region is also described as a circle, shapes such as an ellipse and a polygon can also be applied. As a result, according to the present invention, a semiconductor light receiving element that receives light with high efficiency and high speed can be realized.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of a semiconductor light receiving element of the present invention and a reference form of the present invention will be described in detail with reference to the drawings.
(First reference form)
FIG. 1 is a structural diagram of a semiconductor light receiving element according to a first reference embodiment.
The semiconductor light receiving device of the present reference embodiment, n- type semiconductor substrate layer on (semiconductor substrate layer) 11, i-type semiconductor light-absorbing layer (semiconductor optical absorption layer) and p- type semiconductor layer (semiconductor layer) 13 This It is the structure which laminated in order. Here, a plurality of aperture regions 15 which are features of the present invention are formed in the surface of the light receiving region 14. The opening region 15 is formed by chemical etching or the like, and penetrates from the p − type semiconductor layer 13 to the i − type semiconductor light absorption layer 12. As a result, the effective pn junction area is reduced, leading to a reduction in capacitance. In the above-described conventional structure (FIG. 14), the junction due to lateral depletion cannot be ignored and the capacity reduction is insufficient. However, in this structure , the pn junction is exposed, so that the above excess capacity exists. The feature is not to.

  FIG. 2 shows a case where a plurality of aperture regions 15 having a diameter (aperture diameter) Φ (h) of the aperture region 15 of 1 μm are provided with respect to the diameter (photodetection diameter) Φ of the light reception region (the light reception diameter). It is a figure which shows the calculation prediction of the high frequency band fc of the number increases according to the increase of ().

In the figure, this structure is compared with a conventional structure (an element having no aperture region). Here, the thickness (i-absorption layer thickness) t of the i-semiconductor light absorption layer is 1.0 μm. From this, when the light receiving diameter is 50 μm capable of multimode fiber coupling, the high frequency band is 15 GHz due to the capacity reduction, and an increase of 50% is predicted compared to the conventional structure. This is a high frequency band capable of receiving 20 Gbps signal light. In this structure , the optical carrier generated at the bottom of the aperture region 15 drifts due to a slight electric field and reaches the high concentration region. For this reason, the aperture diameter Φ (h) affects the high frequency band as the travel time. That is, it is necessary to optimize the aperture diameter Φ (h) in accordance with the target band (band).
FIG. 3 is a diagram illustrating the limit of the aperture diameter Φ (h) with respect to the target band, which is estimated from the drift travel time. From this, for example, if 20 GHz is a desired band, the limit of the aperture diameter Φ (h) is 3 μm.
(Second reference form)
Figure 4 is a structural view of a semiconductor light-receiving device according to a second reference embodiment.

The semiconductor light receiving device of the present reference embodiment, n- type semiconductor layer on a (semiconductor substrate layer) 41, i-type semiconductor light-absorbing layer (semiconductor optical absorption layer) 42 and the p- type semiconductor layer (semiconductor layer) 43 This It is the structure which laminated in order. Here, an i − type semiconductor window layer (semiconductor window layer) 46, which is a feature of this embodiment , is inserted between the i − type semiconductor light absorption layer 42 and the p − type semiconductor layer 43, and the surface of the light receiving region 44. A plurality of aperture regions 45 are formed inside. The opening region 44 penetrates from the p − type semiconductor layer 43 to the i − type semiconductor window layer 46. Here, the i − type semiconductor window layer 46 is a semiconductor layer having a band gap larger than the energy of the signal light, and has the effect of a window layer.

That is, in the structure shown in FIG. 1, since the i-type semiconductor light absorption layer is exposed in the opening region 45, there is a concern about efficiency deterioration due to surface recombination. In FIG. 4, the influence of the above surface recombination can be removed by covering the aperture region 44 with the window layer. Here, the capacity reduction effect of the aperture region 44 and the determination of the aperture diameter are based on the same idea as in FIG.
(Third embodiment)
FIG. 5 is a structural diagram of a semiconductor light receiving element according to the third embodiment.

  The semiconductor light-receiving element of this embodiment includes an i-type semiconductor light absorption layer (semiconductor light absorption layer) 52 and an i-type semiconductor window layer (semiconductor window layer) 56 on an n-type semiconductor layer (semiconductor substrate layer) 51. The p-type semiconductor layer 53 is stacked in this order. Here, a plurality of aperture regions 55 are formed in the surface of the light receiving region 54, and the aperture regions 55 penetrate from the p − type semiconductor layer 53 to the i − type semiconductor window layer 56. Here, in the present invention, the diameter of the aperture region 55 (the aperture diameter) changes within the light receiving region surface 54. That is, the aperture diameter Φ (h) is small at the center of the light receiving region and large at the end of the light receiving region. This is because the intensity distribution 57 of the input signal light has a Gaussian distribution, and the light intensity is large at the center of the light receiving region 54. Here, when high input light exceeding mW is incident, it is predicted that a large number of optical carriers are generated immediately below the aperture region 55 at the center of the light receiving region 54 and weaken the electric field of the light absorption layer. This is generally referred to as an electric field drop phenomenon, but leads to deterioration of the high frequency band. The present invention aims to alleviate the electric field drop by reducing the aperture diameter 55 at the center of the light receiving region 54 where the light intensity is high and compensating for a sufficient electric field directly under the pn junction. The purpose is to improve the properties.

  In realizing the structure of the semiconductor light receiving element of the present invention, as a semiconductor light receiving element used in an apparatus such as optical communication, optical information processing, and optical measurement, a semiconductor material is In, Al, Ga, As, P, It is limited to N, Sb, Si, Ge, Hg, Cd, Te, Zn, S, O, Fe, Cu, Se and the like. As described above, the semiconductor light receiving element of the present invention can be improved in performance by being mounted on apparatuses such as optical communication, optical information processing, and optical measurement.

Hereinafter, embodiments and reference examples of the present invention will be described in detail with reference to the drawings.
( Reference Example 1)
Hereinafter, Reference Example 1 of the semiconductor light receiving element will be described with reference to FIG. FIG. 6 is a structural diagram of a semiconductor light receiving element according to Reference Example 1.

The structure and principle of the semiconductor light receiving element of Reference Example 1 are based on FIG. On an n-type InP substrate (semiconductor substrate) 61, a lattice-matched i-type InGaAs light absorption layer (semiconductor light absorption layer) 62 (layer thickness 1 μm), p-type InP window layer (semiconductor window layer) 64 (layer) A thickness of 0.5 μm) is formed. The light receiving area 69 is intended for multimode fiber coupling, and the diameter of the light receiving area (light receiving diameter) Φ = 50 μm. A plurality of aperture regions 68 that are the features of this aspect are formed in the light receiving region surface. Here, for the purpose of application at 20 Gbps, the opening area 68 has an opening diameter of 3 μm and a depth of 0.7 μm by a wet etching method (also possible by a dry etching method). As a result, the optical coupling efficiency is 60%, and the high frequency band is 8 GHz in the conventional structure (structure having no aperture region). However, this structure increases to 16 GHz and can receive 20 Gbps signal light with high efficiency. It became possible. The reason for this performance improvement is that the application of the aperture region according to this aspect has led to a reduction in capacitance through a substantial reduction in pn junction area, leading to higher speed. For this reason, it is possible to receive 20 Gbps signal light even in multimode fiber coupling.

In this reference example, the present invention is applied to the p-type InP window layer and the i-type InGaAs light absorption layer structure, but the same effect can be obtained also in the n-type InP window layer and the i-type InGaAs light absorption layer structure. .
(Reference Example 2)
Hereinafter, Reference Example 2 of the semiconductor light receiving element will be described with reference to FIG. FIG. 7 is a structural diagram of a semiconductor light receiving element according to Reference Example 2.

The structure and principle of the semiconductor light receiving element of Reference Example 2 are based on FIG. On an n-type InP substrate (semiconductor substrate) 71, lattice-matched i-type InGaAs light absorption layer (semiconductor light absorption layer) 72 (layer thickness 1 μm), p-type InP window layer (semiconductor window layer) 74 (layer) The i-type InP window layer 710 (layer thickness 0.2 μm), which is a feature of this embodiment , is inserted between the i-type InGaAs light absorbing layer 72 and the p-type InP window layer 74. Has been. The light receiving region is intended for multimode fiber coupling, and the diameter of the light receiving region (light receiving diameter) Φ = 50 μm. A plurality of aperture regions 78, which is a feature of this aspect , are formed in the light receiving region surface. Here, for the purpose of application at 20 Gbps, the opening area 78 has a diameter (opening diameter) of 3 μm and a depth of 0.9 μm by a wet etching method (also possible by a dry etching method). As a result, the optical coupling efficiency is 70%, and the high-frequency band is 8 GHz in the conventional structure (structure having no aperture region), but this structure increases to 16 GHz and can receive 20 Gbps signal light with high efficiency. Became. The reason for this improvement was that the application of the opening region according to this embodiment resulted in a reduction in capacitance through a substantial reduction in the pn junction area, which led to an increase in speed, and an i-type InP window layer 710 was interposed. This is because the effect of surface recombination is reduced and the efficiency is improved. For this reason, it is possible to receive 20 Gbps signal light with high efficiency while being multimode fiber coupling.

In this reference example, the present invention is applied to a p-type InP window layer, an i-type InP window layer, and an i-type InGaAs light absorption layer structure, but an n-type InP window layer, an i-type InP window layer, i-type The same effect can be obtained in the type InGaAs light absorption layer structure.

  The structure and principle of the semiconductor light-receiving element of Example 3 are based on FIG. On an n-type InP substrate (semiconductor substrate) 81, a lattice-matched i-type InGaAs light absorption layer (semiconductor light absorption layer) 82 (layer thickness 1 μm), i-type InP window layer (semiconductor window layer) 810 (layer) A p-type InP window layer 84 (layer thickness: 0.5 μm) is formed. The light receiving area 89 is intended for multimode fiber coupling, and the diameter of the light receiving area (light receiving diameter) Φ = 50 μm. A plurality of aperture regions 88 in which the aperture diameter, which is a feature of the present invention, is changed in the surface of the light receiving region are formed in the surface of the light receiving region. Here, the aperture diameter is 20 Gbps, and the aperture diameter is gradually increased to 1 μm at the center of the light receiving region and to 3 μm at the end of the light receiving region in order to suppress band degradation at the time of high light input. . The depth was set to 0.9 μm by a wet etching method (also possible by a dry etching method). As a result, the optical coupling efficiency is 70%, and the high frequency band is 8 GHz in the conventional structure (structure having no aperture region), but the structure of the present invention increases to 15 GHz, and receives 20 Gbps signal light with high efficiency. Became possible. Furthermore, in this structure, no significant band degradation was observed even when high input light of +3 dBm was input. The reason for this performance improvement is that the application of the aperture region 88 according to the present invention has led to a reduction in capacitance through a substantial reduction in pn junction area, leading to higher speed, and the interposition of the i-type InP window layer 810. This is because the influence of surface recombination was reduced, and further, the aperture diameter of the aperture region 88 was changed in accordance with the light intensity distribution, thereby suppressing the band degradation due to the electric field drop. For this reason, 20 Gbps signal light was received with high efficiency even though it was a multi-mode fiber coupling, and excellent high light input characteristics were also achieved.

In this embodiment, the present invention is applied to a p-type InP window layer, an i-type InP window layer, and an i-type InGaAs light absorption layer structure, but an n-type InP window layer, an i-type InP window layer, i-type The same effect can be obtained in the type InGaAs light absorption layer structure.
Example 4
Hereinafter, Reference Example 4 of the semiconductor light receiving element will be described with reference to FIG. FIG. 9 is a structural diagram of a semiconductor light receiving element according to Reference Example 4.

The structure and principle of the semiconductor light receiving element of Reference Example 4 are based on FIG. A p-type Si layer 91, an i-type Si light absorption layer (semiconductor light absorption layer) 92 (layer thickness 10 μm), and an n − type Si layer 94 (layer thickness 0.5 μm) are formed on a Si substrate. . The light receiving area is divided into four parts to correspond to the DVD pickup system (bandwidth 100 MHz), and one light receiving area is a 40 μm square. A plurality of aperture regions 98, which is a feature of this aspect , are formed in the light receiving region surface. Here, an amplifier IC having an input resistance of 10 kΩ is connected to the subsequent stage of the light receiving element of this aspect . For this reason, the element capacity required for the light receiving element in order to obtain a band of 100 MHz is 150 fF or less. In this reference example, the opening region 98 was formed in a 2 μm square shape, and the p − type Si layer 91 was formed with a width of 1 μm. The depth was 0.7 μm by a dry etching method. As a result, the element capacitance was 200 fF in the conventional structure (having no aperture region), but was reduced to 130 fF in this structure . This enabled driving at 100 MHz. The reason for this performance improvement is that the application of the aperture region according to this aspect has led to a reduction in capacitance through a substantial reduction in pn junction area, leading to higher speed.

In this reference example, the n-type Si layer, the i-type Si light absorption layer, and the p-type Si layer structure are applied. However, the p-type Si layer, the i-type Si light absorption layer, and the n-type Si layer are used. The same effect can be obtained in the layer structure.
(Example 5)
Hereinafter, Example 5 of the semiconductor light receiving element according to the present invention will be described with reference to FIG. FIG. 10 is a structural diagram of the semiconductor light-receiving element according to the fifth example. In this embodiment, the present invention is applied to an avalanche multiplication type semiconductor light receiving element having an internal gain effect.

  The structure and principle of the semiconductor light-receiving element of Example 5 are based on FIG. On an n-type InP substrate (semiconductor substrate) 101, lattice-matched i-type InGaAs light absorption layer (semiconductor absorption layer) 102 (layer thickness 1 μm), i-type InP window layer (semiconductor window layer) 1010 (layer thickness) 0.2-μm), a p-type InP window 104 (layer thickness: 0.5 μm) is formed, and an i-type InAlAs multiplication layer 1012, a p-type- An InAlAs electric field relaxation layer 1011 is added. The diameter of the light receiving region is intended for multimode fiber coupling, and the light receiving diameter is Φ = 50 μm. A plurality of aperture regions 108 that are the characteristics of the present invention are formed in the surface of the light receiving region. Here, in order to satisfy the performance at the time of 20 Gbps and high light input, the aperture area 108 gradually increases to 1 μm at the center of the light receiving area and to 3 μm at the end of the light receiving area. The depth was set to 0.9 μm by a wet etching method (also possible by a dry etching method). As a result, the optical coupling efficiency is 70%, and the high frequency band is 8 GHz in the multiplication factor to 2 in the conventional structure (structure having no aperture region), but in the structure of the present invention, it is increased to 15 GHz, and the 20 Gbps signal light is increased. It became possible to receive light efficiently. Furthermore, in this structure, no significant band degradation was observed even when high input light of +0 dBm was input. The reason for this performance improvement is that the application of the aperture region 108 according to the present invention has led to a reduction in capacitance through a substantial reduction in pn junction area, leading to an increase in speed, and an i-type InP window layer 1010 is interposed. This is because the influence of surface recombination was reduced by this, and the aperture diameter of the aperture region 108 was changed in accordance with the light intensity distribution, thereby suppressing the band degradation due to the electric field drop. For this reason, an avalanche multiplication type semiconductor light-receiving element that can receive 20 Gbps signal light with high efficiency and is excellent in high light input characteristics while being multi-mode fiber coupled has been realized.

  As described above, according to the present invention, a semiconductor light receiving element capable of receiving light at high speed without reducing the optical coupling efficiency can be realized. Further, the semiconductor light-receiving element realized by the present invention can be improved in performance by being mounted in optical communication, optical information processing, and an optical measurement device.

It is a structure figure of the semiconductor light receiving element concerning the 1st reference form. It is a high frequency band (light receiving diameter dependence) of a semiconductor light receiving element . This is the diameter limit of the aperture region of the semiconductor light receiving element . FIG. 6 is a structural diagram of a semiconductor light receiving element according to a second reference embodiment. FIG. 6 is a structural diagram of a semiconductor light receiving element according to a third embodiment. 6 is a structural diagram of a semiconductor light receiving element according to Reference Example 1. FIG. 6 is a structural diagram of a semiconductor light receiving element according to Reference Example 2. FIG. 7 is a structural diagram of a semiconductor light receiving element according to Example 3. FIG. 6 is a structural diagram of a semiconductor light receiving element according to Reference Example 4. FIG. 7 is a structural diagram of a semiconductor light receiving element according to Example 5. FIG. It is a structural diagram of a semiconductor light receiving element according to a conventional structure. It is the high frequency band (light receiving diameter dependence) of the semiconductor light receiving element by a conventional structure. It is a structure figure (metal Schottky metal type) of the semiconductor light receiving element by a conventional structure. FIG. 6 is a structural diagram (selective diffusion type) of a semiconductor light receiving element having a conventional structure.

Explanation of symbols

11 n-type semiconductor layer 12 i-type semiconductor light absorption layer 13 p-type semiconductor layer 14 light receiving region (diameter Φ)
15 Opening area according to the invention (diameter Φ (h))
41 n-type semiconductor layer 42 i-type semiconductor light absorption layer 43 p-type semiconductor layer 44 light receiving region (diameter Φ)
45 Opening area according to the invention (diameter Φ (h))
46 i-type semiconductor window layer 51 according to the present invention n-type semiconductor layer 52 i-type semiconductor light absorption layer 53 p-type semiconductor layer 54 light receiving region (diameter Φ)
55 Opening area according to the invention (opening diameter Φ (h) varies)
56 i-type semiconductor window layer 57 according to the present invention light intensity distribution 61 of input signal light n-type InP substrate 62 i-type InGaAs light absorption layer 63 n-type InP layer 64 p-type InP window layer 65 SiN film 66 p Type electrode 67 N type electrode 68 Opening region (diameter Φ (h))
69 Light-receiving region 71 n-type InP substrate 72 i-type InGaAs light absorption layer 73 n-type InP layer 74 p-type InP window layer 75 SiN film 76 p-type electrode 77 n-type electrode 78 Opening region (diameter Φ (h ))
79 Light-receiving region 710 i-type InP window layer 81 n-type InP substrate 82 i-type InGaAs light absorption layer 83 n-type InP layer 84 p-type InP window layer 85 SiN film 86 p-type electrode 87 n-type electrode 88 Open Hole area (opening diameter Φ (h) changes)
89 Light-receiving region 810 i-type InP window layer 91 p-type Si layer 92 i-type Si light absorption layer 94 n-type Si layer 95 SiN film 96 n-type electrode 98 aperture region 99 light-receiving region (4 divisions)
101 n-type InP substrate 102 i-type InGaAs light absorption layer 103 n-type InP
104 p-type InP window layer 105 SiN film 106 p-type electrode 107 n-type electrode 108 Opening region (opening diameter Φ (h) changes)
109 Light receiving region 1010 i-type InP window layer 1011 p-type InAlAs electric field relaxation layer 1012 i-type InAlAs multiplication layer 111 n-type InP substrate 112 i-type InGaAs light absorption layer 113 n-type InP
114 p-type InP window layer 115 SiN film 116 p-type electrode 117 n-type electrode 119 light-receiving region 131 n-type InP substrate 132 i-type InGaAs light absorption layer 133 extraction electrode 1
134 Extraction electrode 2
135 Comb electrode area (light receiving area)
141 n (+) − type semiconductor layer 142 n − type semiconductor light absorption layer 143 p − type semiconductor light absorption layer (diffusion region)
144 n-type semiconductor light absorption layer (non-diffusion region)
145 Light receiving area

Claims (5)

In a semiconductor light receiving element formed by laminating a semiconductor light absorption layer and a semiconductor layer on a semiconductor substrate,
The semiconductor light absorption layer and the semiconductor layer have different conductivity types, and have a plurality of aperture regions that reach the semiconductor light absorption layer from the semiconductor layer,
A semiconductor light receiving element, wherein an opening diameter of an opening region at an end of a light receiving region is larger than an opening diameter of an opening region at a central portion of the light receiving region. In a semiconductor light receiving element formed by laminating a semiconductor light absorption layer and a semiconductor layer on a semiconductor substrate,
Between the semiconductor light absorption layer and the semiconductor layer, a semiconductor window layer having a conductivity type different from that of the semiconductor layer is interposed, and a plurality of aperture regions reaching the semiconductor layer window layer from the semiconductor layer are provided. ,
A semiconductor light receiving element, wherein an opening diameter of an opening region at an end of a light receiving region is larger than an opening diameter of an opening region at a central portion of the light receiving region.   3. The semiconductor light receiving element according to claim 1, wherein the aperture region has a circular shape, an elliptical shape, or a polygonal shape.   4. The semiconductor light-receiving element according to claim 1, wherein the semiconductor material constituting the semiconductor absorption layer, the semiconductor layer, and the semiconductor window layer is In, Al, Ga, As, P, or the like. A semiconductor light-receiving element comprising N, Sb, Si, Ge, Hg, Cd, Te, Zn, S, O, Fe, Cu, and Se. An optical communication, an optical information processing, and an optical measurement device comprising the semiconductor light receiving element according to any one of claims 1 to 4.

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