JP4775335B2 - Electrode extraction structure and probe structure - Google Patents

Description

  The present invention relates to an electrode lead-out structure suitable for application to a probe card used in a wafer test for determining the quality of an IC or LSI.

2. Description of the Related Art Conventionally, a probe card including a conductor portion filled in a plurality of through holes formed in a silicon substrate and an operation portion functioning as a probe joined to one end portion of the conductor portion via a pad is known. (See Patent Document 1).
JP 2006-222309 A

  According to the conventional probe card, since the conductor part and the action part are formed separately, there is a problem in reliability of conduction between the conductor part and the action part, and the manufacturing process is complicated. . Also, along with miniaturization of ICs and LSIs to be inspected, miniaturization is also required for conductors and operating parts. When miniaturizing conductors and operating parts, through holes are formed. Since the displacement of the conductor portion and the operating portion in the horizontal direction is likely to occur due to the pitch displacement or displacement of the through-holes, the miniaturization is difficult.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide an electrode lead-out structure and a probe-type structure that can improve the reliability of conduction between a conductor portion and an operating portion and can be miniaturized. It is to provide.

  The electrode lead-out structure and the probe-type structure according to the present invention provide a predetermined distance between a conductor portion penetrating the glass substrate in the depth direction and the glass substrate surface formed at one end of the conductor portion. And an operating portion extending in the in-plane direction of the glass substrate. The conductor portion and the operating portion are integrally formed by processing the silicon substrate.

  According to the electrode lead-out structure and the probe-type structure according to the present invention, since the conductor portion and the operating portion are integrally formed by processing a silicon substrate, the reliability of conduction between the conductor portion and the operating portion is improved. At the same time, it can be miniaturized.

  The electrode lead-out structure according to the present invention can be applied to, for example, a probe card contactor 1 having a plurality of structures 3 on a substrate 2 as shown in FIG. Hereinafter, a configuration of a probe card contactor 1 according to an embodiment of the present invention and a manufacturing method thereof will be described with reference to the drawings.

[Configuration of probe card contactor]
As shown in FIG. 1, a probe card contactor 1 according to an embodiment of the present invention includes a glass substrate 2 and a plurality of structures 3 formed on the glass substrate 2 as main components. As shown in FIG. 2, each structure 3 is formed at one end of the conductor portion 3 c penetrating the glass substrate 2 in the depth direction and the surface of the glass substrate 2, with a distance S between the conductor portion 3 c and the surface of the glass substrate 2. The operation part 3b extending in the in-plane direction of the glass substrate 2 and the contact 3a formed on the upper surface of one end of the operation part 3a are provided. The contact 3a, the operation part 3b, and the conductor part 3c are It is integrally formed by processing the same silicon substrate. Further, an impurity diffusion layer 4 is formed by a surface diffusion process on the lower surface of the operation portion 3b and the side wall portion of the conductor portion 3c, and the resistance is reduced compared to the inside.

[Method for manufacturing probe card contactor]
The probe card contactor 1 can be manufactured by the following manufacturing method. Hereinafter, a method for manufacturing the probe card contactor 1 will be described with reference to FIGS. When the probe card contactor 1 is manufactured, first, as shown in FIG. 3 (a), the back surface side of the silicon substrate 3 is processed to form a plurality of conductor portions 3c. As shown, the impurity diffusion layer 4 is formed by diffusing impurities on the back surface of the silicon substrate 3. By forming the impurity diffusion layer 4, the resistance value between the operation part 3b and the conductor part 3c can be lowered. The entire silicon substrate 3 may have a low resistance by previously implanting impurities into the silicon substrate 3.

  Next, as shown in FIG. 3C, after a sacrificial layer 5 is formed on the surface of the impurity diffusion layer 4, a glass substrate material is deposited on the surface of the sacrificial layer 5, and then a back surface polishing process is performed, so that FIG. The glass substrate 2 is embedded between the plurality of conductor portions 3c as shown in FIG. Finally, after processing the surface side of the silicon substrate 2 as shown in FIG. 3 (e), a plurality of contacts 3a and operating portions 3b are formed, and then sacrificed by etching as shown in FIG. 3 (f). By removing layer 5, the series of manufacturing steps is completed.

  According to such a probe card contactor 1, the conductor portion 3c and the operating portion 3b are integrally formed by processing a silicon substrate. Therefore, when the reliability of conduction between the conductor portion 3c and the operating portion 3b is increased. It can be miniaturized at the same time.

  As mentioned above, although the embodiment to which the invention made by the present inventor is applied has been described, the present invention is not limited by the description and the drawings that form part of the disclosure of the present invention according to this embodiment. As described above, it is a matter of course that all other embodiments, examples, operation techniques, and the like made by those skilled in the art based on the above embodiments are included in the scope of the present invention.

It is a perspective view which shows the structure of the contactor for probe cards used as embodiment of this invention. It is sectional drawing which shows the structure of the structure shown in FIG. FIG. 3 is a cross-sectional process diagram illustrating a flow of a manufacturing process of the structure illustrated in FIG. 2.

Explanation of symbols

1: probe card contactor 2: glass substrate 3a: contact 3b: operating part 3c: conductor part 4: impurity diffusion layer

Claims (4)

A conductor that penetrates the glass substrate in the depth direction;
An operation part formed at one end of the conductor part and extending in an in-plane direction of the glass substrate with a predetermined interval between the glass substrate surface;
The lead structure for an electrode, wherein the conductor portion and the operating portion are integrally formed by processing a silicon substrate.   A probe-type structure having a plurality of electrode lead-out structures according to claim 1 and having a contact structure at a tip of the operating part.   2. The electrode lead-out structure according to claim 1, wherein a side wall portion of the conductor portion in contact with the glass substrate has a low resistance compared to the inside due to surface diffusion treatment.   2. The electrode lead-out structure according to claim 1, wherein the silicon substrate is a silicon substrate whose resistance is reduced by an impurity implantation process.

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