JP4784966B2 - 半導体レーザ装置および照明装置 - Google Patents
半導体レーザ装置および照明装置 Download PDFInfo
- Publication number
- JP4784966B2 JP4784966B2 JP2004328470A JP2004328470A JP4784966B2 JP 4784966 B2 JP4784966 B2 JP 4784966B2 JP 2004328470 A JP2004328470 A JP 2004328470A JP 2004328470 A JP2004328470 A JP 2004328470A JP 4784966 B2 JP4784966 B2 JP 4784966B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor laser
- laser device
- wavelength
- reflecting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/60—Optical arrangements integrated in the light source, e.g. for improving the colour rendering index or the light extraction
- F21K9/68—Details of reflectors forming part of the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0087—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for illuminating phosphorescent or fluorescent materials, e.g. using optical arrangements specifically adapted for guiding or shaping laser beams illuminating these materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02218—Material of the housings; Filling of the housings
- H01S5/02234—Resin-filled housings; the housings being made of resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1021—Coupled cavities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Description
図1は、本発明の半導体レーザ装置の実施形態1における概略構成例を模式的に示す断面図である。
本実施形態2では、光拡散部材が散乱体と共に蛍光物質を含有する場合について説明する。
本実施形態3では、光拡散部材に散乱体と共に蛍光物質と波長変換物質を含有する場合について説明する。
本実施形態4では、半導体レーザ素子に複数(ここでは六つ)の光出射面が設けられ、その複数の光出射面にそれぞれ反射面が対向配置された複数(ここでは六つ)の反射部材が設けられ、半導体レーザ素子の光出射面と反射部材の反射面とによって複数(ここでは六つ)の外部共振器がそれぞれ設けた場合について説明する。
本実施形態5では、反射部材3の光拡散部材2側とは反対側に半導体レーザ素子1とは別の半導体レーザ素子が設けられ、反射部材3が別の半導体レーザ素子の光出射面としても機能するように構成され、反射部材3に対向配置された半導体レーザ素子1の光出射面1bを反射面としても機能する場合について説明する。
本実施形態6では、光拡散部材は光散乱体が含有された樹脂によって半導体レーザ素子1と反射部材3とが封止されている場合について説明する。
本実施形態7では、光拡散部材2から出射される出射光を所定方向に反射させる外部反射部材としての反射集光部材を設けた場合について説明する。
本実施形態8では、半導体レーザ素子1を駆動する駆動回路を備え、この駆動回路の電源端子が口金形状である場合について説明する。
本実施形態9では、光拡散部材2、2aまたは2bの代わりに、光散乱体が含有された樹脂が半導体レーザ素子1の光出射面側に塗布された光拡散部材と、光散乱体が含有された樹脂が反射部材3の反射面に塗布された光拡散部材とのうち少なくともいずれかを有する場合について説明する。
本実施形態10では、光拡散部材2、2aまたは2bからの出射光を受光する受光素子が更に設けられ、この受光素子で受光して得た受光情報を駆動回路にフィードバックして出射光の発光強度を制御可能とする場合について説明する。
1a,13a 光出射面と対向する面
1b,13b 光出射面
2,2a,2b,21a,22a,22b 光拡散部材
3 反射部材
4 第2の反射部材
5 駆動回路
6a,6b 電源端子
7 受光素子
10,10a,10b,20,30,40,50,60,71〜73,80 半導体レーザ装置
a レーザ発振光
b レーザ出射光
c 散乱体
d 散乱光(光拡散部材からの外部への出射光)
e 光拡散部材の通過光
Claims (8)
- 反射鏡として機能する光出射面と、該光出射面に対向配置され反射鏡として機能する対向面とを有する内部共振器を備えた半導体レーザ素子の該光出射面と、該光出射面に対して該対向面とは反対側に該光出射出面に対向配置された反射部材の反射面とによって外部共振器が構成され、該光出射面と該反射面間に光拡散部材が該光出射面および該反射面に接して配置されて該光拡散部材から散乱光が出射されるように構成され、
該反射面は、該光拡散部材を通過して該反射面に入射した光を透過させることなく反射する、半導体レーザ装置。 - 前記光拡散部材には蛍光物質および波長変換物質の少なくともいずれかが含有されている請求項1に記載の半導体レーザ装置。
- 前記波長変換物質は、前記半導体レーザ素子からの光を吸収して、該半導体レーザ素子の光の波長の自然数分の1の光に変換する請求項2に記載の半導体レーザ装置。
- 前記波長変換物質は第2高調波素子である請求項2に記載の半導体レーザ装置。
- 前記半導体レーザ素子の発振波長が青色領域の波長であり、前記蛍光物質の発光色が黄色であり、該半導体レーザ素子からの光を前記光拡散部材で拡散した光と前記蛍光物質が発光した光とを混合することにより白く発光するように構成した請求項2に記載の半導体レーザ装置。
- 前記半導体レーザ素子の発振波長が赤色領域の波長であり、前記波長変換物質から発生するレーザ光が紫外領域の波長であり、該半導体レーザ素子からの光を前記光拡散部材で拡散した光と該蛍光物質から発光した光とを混合するように構成した請求項2に記載の半導体レーザ装置。
- 前記半導体レーザ素子の発振波長が赤外領域の波長であり、前記波長変換物質から発生するレーザ光が青色領域の波長であり、該波長変換物質から発生した光を前記光拡散部材で拡散した光と前記蛍光物質が発光した光とを混合するように構成した請求項2に記載の半導体レーザ装置。
- 請求項1に記載の半導体レーザ装置からの出射光により照明する照明装置。
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004328470A JP4784966B2 (ja) | 2003-11-18 | 2004-11-12 | 半導体レーザ装置および照明装置 |
| US10/989,727 US7359422B2 (en) | 2003-11-18 | 2004-11-17 | Semiconductor laser device and illumination apparatus |
| CNB2004100947953A CN1332486C (zh) | 2003-11-18 | 2004-11-18 | 半导体激光器件和照明装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003388597 | 2003-11-18 | ||
| JP2003388597 | 2003-11-18 | ||
| JP2004328470A JP4784966B2 (ja) | 2003-11-18 | 2004-11-12 | 半導体レーザ装置および照明装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005175452A JP2005175452A (ja) | 2005-06-30 |
| JP4784966B2 true JP4784966B2 (ja) | 2011-10-05 |
Family
ID=34741901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004328470A Expired - Fee Related JP4784966B2 (ja) | 2003-11-18 | 2004-11-12 | 半導体レーザ装置および照明装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7359422B2 (ja) |
| JP (1) | JP4784966B2 (ja) |
| CN (1) | CN1332486C (ja) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8614768B2 (en) | 2002-03-18 | 2013-12-24 | Raytheon Company | Miniaturized imaging device including GRIN lens optically coupled to SSID |
| WO2007018039A1 (ja) * | 2005-08-05 | 2007-02-15 | Matsushita Electric Industrial Co., Ltd. | 半導体発光装置 |
| JPWO2007091611A1 (ja) * | 2006-02-09 | 2009-07-02 | パナソニック株式会社 | 液晶表示装置 |
| US20090161704A1 (en) * | 2006-04-27 | 2009-06-25 | Koninklijke Philips Electronics N.V. | Intracavity upconversion laser |
| JP4449976B2 (ja) | 2006-12-26 | 2010-04-14 | セイコーエプソン株式会社 | 外部共振型レーザ光源装置 |
| US7835074B2 (en) | 2007-06-05 | 2010-11-16 | Sterling Lc | Mini-scope for multi-directional imaging |
| JP5216384B2 (ja) * | 2008-03-19 | 2013-06-19 | 株式会社東芝 | 発光装置 |
| WO2009155432A2 (en) * | 2008-06-18 | 2009-12-23 | Sterling Lc | Miniaturized imaging device multiple grin lenses optically coupled to multiple ssids |
| JP5596027B2 (ja) | 2008-06-18 | 2014-09-24 | レイセオン カンパニー | カテーテル |
| WO2010014792A2 (en) | 2008-07-30 | 2010-02-04 | Sterling Lc | Method and device for incremental wavelength variation to analyze tissue |
| WO2010053916A2 (en) | 2008-11-04 | 2010-05-14 | Sterling Lc | Method and device for wavelength shifted imaging |
| US20100296536A1 (en) * | 2009-05-23 | 2010-11-25 | Chris Tao | Lighting device using a laser diode as a source of light emission |
| JP2011065979A (ja) * | 2009-08-18 | 2011-03-31 | Sharp Corp | 光源装置 |
| JP5122542B2 (ja) * | 2009-09-15 | 2013-01-16 | シャープ株式会社 | 発光装置、照明装置および光検知器 |
| US9144664B2 (en) | 2009-10-01 | 2015-09-29 | Sarcos Lc | Method and apparatus for manipulating movement of a micro-catheter |
| WO2011041728A2 (en) | 2009-10-01 | 2011-04-07 | Jacobsen Stephen C | Needle delivered imaging device |
| US8717428B2 (en) | 2009-10-01 | 2014-05-06 | Raytheon Company | Light diffusion apparatus |
| US8828028B2 (en) | 2009-11-03 | 2014-09-09 | Raytheon Company | Suture device and method for closing a planar opening |
| JP4991001B2 (ja) * | 2009-12-28 | 2012-08-01 | シャープ株式会社 | 照明装置 |
| JP2010261048A (ja) * | 2010-07-28 | 2010-11-18 | Sharp Corp | 発光装置及び、その製造方法 |
| JP2010248530A (ja) * | 2010-07-28 | 2010-11-04 | Sharp Corp | 波長変換部材、発光装置及び波長変換部材の製造方法 |
| AT516729B1 (de) * | 2015-03-25 | 2016-08-15 | Zizala Lichtsysteme Gmbh | Scheinwerfer für Fahrzeuge |
| JP2016221995A (ja) * | 2015-05-27 | 2016-12-28 | スタンレー電気株式会社 | 車両用灯具システム |
| US10587090B1 (en) * | 2015-12-31 | 2020-03-10 | Soraa Laser Diode, Inc. | Safe laser light |
| US10866484B2 (en) | 2018-09-04 | 2020-12-15 | Abl Ip Holding Llc | Light frequency upconversion of laser light, for cleansing |
| US10873175B2 (en) * | 2019-01-28 | 2020-12-22 | Abl Ip Holding Llc | Light frequency up-conversion of laser light, for producing green or yellow light |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766995B2 (ja) | 1985-06-14 | 1995-07-19 | シャープ株式会社 | 半導体レーザ装置 |
| JPH0527121A (ja) | 1991-07-19 | 1993-02-05 | Nippon Telegr & Teleph Corp <Ntt> | 光源装置 |
| JP2806409B2 (ja) * | 1992-06-24 | 1998-09-30 | 日本電信電話株式会社 | 半導体レーザおよびその製造方法 |
| JPH07192517A (ja) | 1993-12-27 | 1995-07-28 | Bridgestone Corp | 車両軌跡マーカー |
| JP2596709B2 (ja) * | 1994-04-06 | 1997-04-02 | 都築 省吾 | 半導体レーザ素子を用いた照明用光源装置 |
| US6022455A (en) * | 1995-02-07 | 2000-02-08 | Matsushita Electric Industrial Co., Ltd. | Light irradiation method and its apparatus |
| US5813753A (en) * | 1997-05-27 | 1998-09-29 | Philips Electronics North America Corporation | UV/blue led-phosphor device with efficient conversion of UV/blues light to visible light |
| JPH11145519A (ja) * | 1997-09-02 | 1999-05-28 | Toshiba Corp | 半導体発光素子、半導体発光装置および画像表示装置 |
| US6294800B1 (en) * | 1998-02-06 | 2001-09-25 | General Electric Company | Phosphors for white light generation from UV emitting diodes |
| US6259561B1 (en) * | 1999-03-26 | 2001-07-10 | The University Of Rochester | Optical system for diffusing light |
| DE19963805B4 (de) * | 1999-12-30 | 2005-01-27 | Osram Opto Semiconductors Gmbh | Weißlichtquelle auf der Basis nichtlinear-optischer Prozesse |
| US20020097587A1 (en) * | 2000-02-11 | 2002-07-25 | Krietzman Mark Howard | Variable output laser illuminator and targeting device |
| DE10017769A1 (de) * | 2000-04-10 | 2001-10-18 | Diesener Arnold Michael | Tragbares Leuchtobjekt und Verfahren zur Herstellung desselben |
| US20020084745A1 (en) * | 2000-12-29 | 2002-07-04 | Airma Optoelectronics Corporation | Light emitting diode with light conversion by dielectric phosphor powder |
| US6686676B2 (en) * | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
| US6870311B2 (en) * | 2002-06-07 | 2005-03-22 | Lumileds Lighting U.S., Llc | Light-emitting devices utilizing nanoparticles |
| JP4197109B2 (ja) * | 2002-08-06 | 2008-12-17 | 静雄 藤田 | 照明装置 |
| US20040159900A1 (en) * | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
| US7091653B2 (en) * | 2003-01-27 | 2006-08-15 | 3M Innovative Properties Company | Phosphor based light sources having a non-planar long pass reflector |
| US7210977B2 (en) * | 2003-01-27 | 2007-05-01 | 3M Innovative Properties Comapny | Phosphor based light source component and method of making |
| US7029935B2 (en) * | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| JP4378242B2 (ja) * | 2003-09-25 | 2009-12-02 | 株式会社小糸製作所 | 車両用灯具 |
-
2004
- 2004-11-12 JP JP2004328470A patent/JP4784966B2/ja not_active Expired - Fee Related
- 2004-11-17 US US10/989,727 patent/US7359422B2/en not_active Expired - Lifetime
- 2004-11-18 CN CNB2004100947953A patent/CN1332486C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1332486C (zh) | 2007-08-15 |
| US20050152421A1 (en) | 2005-07-14 |
| JP2005175452A (ja) | 2005-06-30 |
| US7359422B2 (en) | 2008-04-15 |
| CN1619903A (zh) | 2005-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4784966B2 (ja) | 半導体レーザ装置および照明装置 | |
| JP4822919B2 (ja) | 発光装置および車両用ヘッドランプ | |
| CN102901016B (zh) | 光源装置、照明装置、车辆用前照灯和车辆 | |
| JP4589385B2 (ja) | 照明システム及びディスプレイ | |
| JP5416150B2 (ja) | ロングパス反射体を有する蛍光体による照明システムおよびその作製方法 | |
| JP4172196B2 (ja) | 発光ダイオード | |
| US8269239B2 (en) | Light emitting diode chip package | |
| JP4801058B2 (ja) | 複数の光導波路を有する蛍光体による照明システムおよびそれを用いたディスプレイ | |
| US9075293B2 (en) | Illumination device, projecting device and lighting device | |
| EP2556293B1 (en) | High brightness illumination device using double-sided excitation of wavelength conversion materials | |
| US20150247623A1 (en) | Light emitting assembly, a lamp and a luminaire | |
| JP2008505445A (ja) | 複数の光導波路を有する蛍光体による照明システムおよびそれを用いたディスプレイ | |
| JP2008235439A (ja) | 白色光源装置 | |
| JP2008505441A (ja) | ショートパス反射体を有する蛍光体による照明システムおよびその作製方法 | |
| JP2008505448A (ja) | ショートパス反射体を有する蛍光体による照明システムおよびその作製方法 | |
| JP2004071357A (ja) | 照明装置 | |
| JP2012221634A (ja) | 照明装置及び前照灯 | |
| JP5548118B2 (ja) | 照明装置及び液晶表示装置 | |
| JP2011029432A (ja) | 発光装置およびそれを備えた照明装置 | |
| JP6989786B2 (ja) | 波長変換部品及びこれを用いた発光装置 | |
| JP2007059864A (ja) | 照明装置および発光ダイオード装置 | |
| CN104879713A (zh) | 波长转换装置和发光装置 | |
| JPWO2019171775A1 (ja) | 発光素子、光源装置及びプロジェクタ | |
| JP2008282984A (ja) | 半導体発光装置 | |
| JP2000113709A (ja) | 平面照明装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070302 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20091019 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091204 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100610 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100729 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110105 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110323 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110401 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110706 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110706 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4784966 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140722 Year of fee payment: 3 |
|
| RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D04 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |