JP4801600B2 - Film forming method and film forming apparatus - Google Patents

Description

The present invention relates to a method and apparatus for forming a thin film containing an organic compound. In particular, the present invention relates to a film forming method and a film forming apparatus for an electroluminescent element.

2. Description of the Related Art In recent years, development of EL (Electro Luminescence) elements that emit light when a voltage is applied has been active. EL elements are broadly classified into organic EL elements that emit organic compounds and inorganic EL elements that emit inorganic compounds. However, unlike light-emitting devices such as LEDs, a flat light source with a large area can be formed. Application to panel displays is expected.

However, although inorganic EL elements are generally excellent in reliability and life, they also have demerits such as high applied voltage and low emission luminance. On the other hand, an organic EL element generally emits light at a low voltage and can achieve high light emission luminance, but there is a trade-off that the lifetime is shortened when the luminance is increased, which is a factor for narrowing the application range. In addition, the luminous efficiency is still not sufficient.

In order to overcome these problems, for example, in an inorganic EL element, an attempt is made to obtain high luminance characteristics by introducing an annealing process step by excimer laser light irradiation (see Patent Document 1).

In addition, in the organic EL element, an example in which an organic material having a photoreactive group is deposited and then light irradiation is performed to crosslink the organic material to improve the element lifetime at a high temperature has been reported (Patent Literature). 2).

However, the light emission luminance, light emission efficiency, and lifetime of these light emitting elements have not yet reached a level at which a flat panel display can be produced, and further improvement in characteristics is desired. In particular, it can be said that there is an urgent need to improve the lifetime and luminous efficiency of the organic EL element.
JP 2000-357586 A JP 2001-303038 A

Many organic EL devices are formed by depositing an organic compound on a substrate using a vapor deposition method, but in normal vapor deposition, vaporized organic molecules lose thermal energy on the substrate and freeze. Is done (solidifies). Therefore, if there is a large variation in how the energy is lost, it is considered that the method of depositing organic molecules becomes messy and it is difficult to form a dense film. The same applies to the case where an inorganic compound is deposited by vapor deposition.

However, since the denseness of the film is considered to be an important factor for extending the lifetime of the light emitting element, it is desired to develop a new vapor deposition method for making the film dense.

Further, as a structure of the light emitting layer in the organic EL element, a method of dispersing a light emitting substance as a guest material in a host material is often used. When such a light emitting layer is formed by a vapor deposition method, the host material is usually used. And a co-evaporation method in which the guest material is vaporized and deposited simultaneously from different evaporation sources. At this time, the guest material can emit light efficiently by being uniformly dispersed in the host material.

However, if the guest material aggregates during film formation, the light emission efficiency decreases due to a phenomenon called concentration quenching. Therefore, a vapor deposition method capable of uniformly dispersing the guest material and forming a homogeneous film is desired.

In view of the above, an object of the present invention is to provide a film forming method capable of making a film dense. It is another object of the present invention to provide a film forming method capable of forming a homogeneous film.

It is another object of the present invention to provide a film forming apparatus that can make a film dense. It is another object of the present invention to provide a film forming apparatus capable of forming a homogeneous film.

As a result of intensive investigations, the inventors of the present invention formed a film while irradiating the vaporized substance with a laser beam when forming the substance forming the light emitting element on the substrate by vapor deposition. I found out that the problem can be solved. The material for forming the film is not limited, but when the material is an organic compound, it is particularly effective because it is difficult to densify the film by an ordinary vapor deposition method.

Therefore, the structure of the present invention is that the substrate is fixed to the substrate holding means in the film forming chamber having the evaporation source filled with the organic compound, the organic compound is vaporized, and the vaporized organic compound is irradiated with the laser beam. On the other hand, the organic compound is deposited on the substrate.

At this time, if the substrate is irradiated with the laser beam, heat may be generated depending on the material of the substrate, and the substance may not be deposited (re-evaporated) on the substrate. Therefore, the present inventors have found that this problem can be overcome by irradiating a laser beam substantially parallel to one surface of the substrate so that the substrate is not easily irradiated with the laser beam. This utilizes the straightness of the laser beam, and it is difficult to overcome this problem with ordinary light with low straightness. Further, the material for forming the film is not limited. However, when an organic compound having a generally low evaporation temperature is formed, the present technique that can prevent heat generation of the substrate is very effective.

Accordingly, a more preferable configuration of the present invention is that the substrate is fixed to the substrate holding means in the film formation chamber having the evaporation source filled with the organic compound, the organic compound is vaporized, and the organic compound is vaporized. In this film forming method, the organic compound is deposited on the substrate while irradiating a laser beam substantially parallel to one surface of the substrate.

Furthermore, the film forming method of the present invention as described above is particularly effective at the time of co-evaporation in which a plurality of organic compounds are vaporized at the same time to form a film in which the plurality of organic compounds are mixed. Therefore, the configuration of the present invention is to fix the substrate to the substrate holding means in the film formation chamber having a plurality of evaporation sources filled with a plurality of different organic compounds, and to vaporize and vaporize the plurality of organic compounds simultaneously. A film forming method for depositing the plurality of organic compounds on the substrate while irradiating the plurality of organic compounds with a laser beam.

Even during such co-deposition, it is preferable that the substrate is not easily irradiated with the laser beam for the same reason as described above. Therefore, the configuration of the present invention is to fix the substrate to the substrate holding means in the film formation chamber having a plurality of evaporation sources filled with a plurality of different organic compounds, and to vaporize and vaporize the plurality of organic compounds simultaneously. The plurality of organic compounds are deposited on the substrate while irradiating the plurality of organic compounds with a laser beam substantially parallel to one surface of the substrate.

Note that in the film forming method described above, the wavelength of the laser beam is preferably a wavelength that can excite the organic compound. When there are a plurality of organic compounds to be deposited (that is, during co-deposition), the wavelength of the laser beam may be any wavelength that can excite any of the plurality of organic compounds. The wavelength of the laser beam may be in the infrared region so as to promote molecular motion.

By the way, it can be said that the film forming apparatus capable of realizing the film forming method of the present invention as described above has the configuration of the present invention. In particular, as described above, the film is designed so that the substrate does not generate heat by irradiating the substrate with a laser beam substantially parallel to one surface of the substrate to prevent the substrate from being irradiated with the laser beam. The apparatus has a characteristic configuration of the present invention. Therefore, another configuration of the present invention includes an evaporation source filled with an organic compound, a substrate holding unit that exposes and holds one surface of at least a part of the substrate, and a film forming chamber provided therein, Laser beam irradiation means for irradiating a laser beam substantially parallel to one surface, and the laser beam irradiation means is irradiated with the laser beam between the evaporation source and the substrate holding means. The film forming apparatus is provided as described above. In the present specification, the term “substantially parallel” refers to a case where they are parallel with some deviation. Therefore, the laser beam may be deviated from the parallel direction within a range where the substrate is not heated.

Further, the structure of the present invention includes an evaporation source filled with an organic compound, a substrate holding unit that exposes and holds one surface or at least a part of the substrate, and a surface of the substrate. A laser beam irradiating means for irradiating a laser beam substantially parallel to the laser beam, and the laser beam irradiating means is provided so that the organic compound vaporized from the evaporation source is irradiated with the laser beam. The film forming apparatus.

Further, in the film forming apparatus of the present invention, a light introducing window that transmits a laser beam is provided in the film forming chamber, and a laser beam irradiation means is provided outside the film forming chamber, and the laser beam passes the light introducing window. A structure that transmits and irradiates the film formation chamber is preferable. By adopting such a configuration, contamination of the laser beam irradiation means with an organic compound can be easily prevented. In addition, the configuration of the film formation chamber is not complicated, and there is also an advantage that a conventionally used film formation chamber can be used as it is. Therefore, the configuration of the present invention includes a film forming chamber provided with an evaporation source filled with an organic compound and a substrate holding means for exposing and holding one surface of at least a part of the substrate, and the film forming chamber. A laser beam irradiation unit that irradiates the film formation chamber with a laser beam that is provided and a laser beam that is substantially parallel to one surface of the substrate, and the laser beam irradiation unit. Is a film forming apparatus provided to irradiate the laser beam between the evaporation source and the substrate holding means.

Further, the structure of the present invention includes an evaporation source filled with an organic compound and a substrate holding means for exposing and holding one surface of at least a part of the substrate, and a film forming chamber provided therein, A laser beam irradiation unit that irradiates the film formation chamber with a laser beam that is provided and a laser beam that is substantially parallel to one surface of the substrate, and the laser beam irradiation unit. Is a film forming apparatus provided to irradiate the organic compound vaporized from the evaporation source with the laser beam.

Note that in the film formation apparatus described above, the wavelength of the laser beam is preferably a wavelength that can excite the organic compound. When there are a plurality of organic compounds to be deposited (that is, during co-deposition), the wavelength of the laser beam may be any wavelength that can excite any of the plurality of organic compounds. The wavelength of the laser beam may be in the infrared region so as to promote molecular motion.

Further, as a laser light source of the laser beam irradiation means, specifically, an Ar laser, a Kr laser, a carbon dioxide laser, a YAG laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, a KGW laser, a KYW laser, an alexandrite laser, Ti : Sapphire laser, Y ₂ O ₃ laser, YVO ₄ laser, ceramics laser, helium cadmium laser, etc. can be preferably used.

In the film forming apparatus of the present invention described above, a light receiving plate for absorbing the laser is provided at the irradiation end of the laser beam in order to prevent reflection of the laser beam in the film forming chamber and improve safety. Preferably it is.

The film forming method of the present invention as described above is particularly effective during co-evaporation in which a plurality of organic compounds are vaporized at the same time to form a film in which the plurality of organic compounds are mixed. In the membrane apparatus, it is preferable that a plurality of evaporation sources are provided.

By implementing the present invention, the film can be made dense during film formation. In addition, a homogeneous film can be formed.

Further, by implementing the present invention, a film forming apparatus that can make the film dense can be obtained. In addition, a film forming apparatus capable of forming a homogeneous film is obtained.

Furthermore, a light-emitting element with a long lifetime can be obtained by applying the film formation method and the film formation apparatus of the present invention to the manufacture of a light-emitting element. In addition, a light-emitting element with high emission efficiency can be obtained.

In the present embodiment, the film forming method and film forming apparatus of the present invention will be described in more detail. The film forming method and the film forming apparatus of the present invention are particularly effective when an organic compound is formed as described in the section for solving the problem. Explained.

(Embodiment 1)
In the first embodiment, the film forming method of the present invention will be described from the viewpoint of the gist of the present invention to make a film dense.

First, the relationship between the denseness of the film and the lifetime of the light emitting element will be described. As described above, the denseness of the film is considered to be an important factor for extending the lifetime of the light-emitting element, for the following reason.

First, when the film is not dense, there is a problem that organic molecules easily move during driving of the light emitting element. If the position of the organic molecule moves during driving (ie, over time), the carrier balance also changes over time. Further, when the carrier balance changes, the output with respect to the input power, that is, the light emission efficiency decreases. Therefore, the movement of organic molecules over time eventually leads to a decrease in light emission efficiency over time, which is recognized as a deterioration in luminance. Second, when the film is not dense, impurities also move easily over time, but impurities that interfere with light emission (oxygen, water, substances generated by reaction during driving, etc.) move to the light emitting layer. This will also lead to a decrease in luminous efficiency over time.

FIG. 1 is a schematic diagram showing a state in which an organic compound film 110 is formed by organic molecules 101 deposited on a substrate 100. As described above, in the case of normal vapor deposition, the vaporized organic molecule loses thermal energy on the substrate and is frozen (solidified). However, if there is a large variation in how the energy is lost, the organic molecule 101 The way of depositing becomes messy. Therefore, in this case, a gap 120 is generated in the organic compound film 110 as shown in FIG. That is, in normal vapor deposition, it is difficult to form a dense film with no gap as shown in FIG.

Therefore, the present inventors devised irradiating a laser beam to the vaporized organic compound before reaching the substrate when the organic compound is vapor-deposited on the substrate. The film forming method of the present invention and its principle will be described below with reference to FIG.

In the film forming method of the present invention, first, the substrate 202 is fixed to the substrate holding means 201 in the film forming chamber 200 having the evaporation source 210 filled with the organic compound 211 (FIG. 2A). Next, the organic compound 211 is vaporized (FIG. 2B). In FIG. 2, 212 represents the vaporized organic compound. As a means for vaporizing the organic compound, any means such as a resistance heating method or an induction heating method may be used. Further, during vapor deposition of the organic compound, the vaporized organic compound 212 is irradiated with a laser beam 203 (FIG. 2C). At this time, as shown in FIG. 2, it is preferable to irradiate the laser beam 203 so as to be substantially parallel to one surface of the substrate so that the substrate is not heated, but it may not be heated depending on the material of the substrate. It is not limited to this.

In FIG. 2, when the wavelength of the laser beam 203 is a wavelength that can excite the organic compound 211, the vaporized organic compound 212 is excited by the laser beam 203 to obtain energy. At this time, since the laser beam 203 has a homogeneous and high-density energy density, the vaporized organic compound 212 irradiated with the laser beam 203 obtains uniform energy for all molecules. As a result, in the process in which the vaporized organic compound 212 loses thermal energy on the substrate 202 and freezes (solidifies), the loss of thermal energy is uniform for each molecule, and the dense film 204 without gaps is present. Is formed.

At this time, it is preferable that the vaporized organic compound 212 reaches the substrate 202 in an excited state (that is, in a state having high energy) because a denser film can be formed. For example, a phosphorescent compound as described in Embodiment 3 below has an excitation lifetime of about 1 μsec, but when an organic compound having a molecular weight of about 1000 evaporates at about 250 ° C. and is vacuum-deposited, that 1 μsec The distance that the organic compound can fly in a vacuum is about 0.1 mm. Therefore, in FIG. 2, the distance between the laser beam 203 and the substrate 202 is preferably 0.01 mm or more and 0.1 mm or less.

However, the vaporized organic compound 212 does not necessarily reach the substrate 202 in an excited state. This is because when the excited state is deactivated, part of the obtained energy activates molecular motion and is converted into thermal energy. Therefore, also in this case, each molecule can reach the substrate 202 with uniform energy.

From the viewpoint of conversion to thermal energy, when the wavelength of the laser beam 203 is in the infrared region, the molecular motion of the vaporized organic compound 212 is activated, and the vaporized organic compound 212 is converted into thermal energy. This is preferable because

As described above, a dense film can be formed by applying the film forming method of the present invention. As a laser light source of a laser beam having a wavelength capable of exciting the organic compound 211 as described above, a laser having a wavelength in the ultraviolet light region or visible light region can be given, and a second laser of a nitrogen laser (337 nm) or a YVO ₄ laser can be used. Harmonics (532 nm) or the like can be used. Moreover, as a laser light source of a laser beam having a wavelength in the infrared light region, a carbon dioxide laser or the like can be given.

(Embodiment 2)
In the second embodiment, the film forming method of the present invention will be described from the viewpoint of the gist of the present invention to form a homogeneous film.

First, the relationship between the uniformity of the film and the light emission efficiency of the light emitting element will be described. As described above, the uniformity of the film is considered to be an important factor for increasing the efficiency of the light-emitting element, for the following reason. That is, as described above, when a guest material that is a light-emitting material is dispersed in a host material using a co-evaporation method, if the guest material aggregates, light emission occurs due to a phenomenon called concentration quenching. This is because the efficiency is lowered.

FIG. 3 is a schematic diagram showing a state in which an organic compound film 310 is formed by the host material molecules 301 and the guest material molecules 302 deposited on the substrate 300. In the case of normal vapor deposition, the vaporized organic molecules lose their thermal energy on the substrate and freeze (solidify). However, if there is a large variation in how the energy is lost, the organic molecules are deposited in a messy manner. Become. As a result, as shown in FIG. 3A, aggregates 320 of guest material molecules 302 are formed in the organic compound film 310. That is, it is difficult to form a homogeneous film without aggregates as shown in FIG.

Therefore, the present inventors devised irradiating a laser beam to the vaporized organic compound before reaching the substrate when different organic compounds are simultaneously deposited on the substrate by co-evaporation. The film forming method of the present invention and its principle will be described below with reference to FIG.

In the film forming method of the present invention, first, a plurality of evaporation sources (in this embodiment) filled with a plurality of different organic compounds (in this embodiment, two types of materials, a host material 411 and a guest material 421). The substrate 402 is fixed to the substrate holding means 401 in the film formation chamber 400 having the evaporation source 410 of the host material 411 and the evaporation source 420 of the guest material 421 (FIG. 4A). . Next, the host material 411 and the guest material 421 are vaporized at the same time (FIG. 4B). In FIG. 2, 412 represents a vaporized host material, and 422 represents a vaporized guest material. As a means for vaporizing the organic compound, any means such as a resistance heating method or an induction heating method may be used. Further, here, the vaporized host material 412 and the vaporized guest material 422 are irradiated with a laser beam 403 during co-evaporation (FIG. 4C). At this time, as shown in FIG. 4, the laser beam 403 is preferably irradiated so as to be substantially parallel to one surface of the substrate so that the substrate is not heated, but depending on the material of the substrate, it may not be heated. It is not limited to this.

In FIG. 4, when the wavelength of the laser beam 403 is a wavelength that can excite the host material 411 or the guest material 421, either or both of these vaporized organic compounds are excited by the laser beam 403 to obtain energy. It becomes a state. Hereinafter, in Embodiment 2, the case where the guest material 421 is excited will be described. However, in the present invention, the same effect can be obtained when either the host material or the guest material is excited. It will never be done.

Since the laser beam 403 has a homogeneous and high-density energy density, the vaporized guest material 422 irradiated with the laser beam 403 obtains uniform energy for all molecules. As a result, in the process in which the vaporized guest material 422 loses thermal energy on the substrate 202 and freezes (solidifies), the way in which the thermal energy is lost becomes uniform for each molecule. In the case of this embodiment, since the host material is present around the guest material, the guest material does not form a film alone during freezing. That is, the guest material is uniformly dispersed in the host material, and a uniform film 404 is formed. Note that as shown in FIG. 4B, even if the vaporized guest material 422 forms the association state 423, the association state 423 is eliminated by irradiation with a laser beam having high-density energy. A homogeneous film 404 is also obtained.

Note that for the same reason as described in Embodiment Mode 1, the distance between the laser beam 403 and the substrate 402 in FIG. 4 is preferably 0.01 mm or more and 0.1 mm or less, but is not necessarily limited thereto. . For the same reason as described in Embodiment Mode 1, the laser beam 403 may have a wavelength in the infrared region. A laser light source similar to that described in Embodiment 1 can be used.

(Embodiment 3)
The film forming apparatus of the present invention according to this embodiment will be described with reference to FIGS. 5 is a side view for explaining the configuration of the film forming apparatus, and FIG. 6 is a plan view thereof. In the following description, both figures are referred to.

The film forming apparatus according to this embodiment does not increase the temperature during film formation, and does not deteriorate the underlying structure on which the thin film is deposited, or the deposited thin film itself, or a dense thin film or a homogeneous film with less distortion and defects. The purpose is to form a thin film. In particular, it is a film forming apparatus suitable for depositing an organic thin film having a low evaporation temperature and a low heat resistance temperature.

The film forming apparatus shown in FIGS. 5 and 6 includes a film forming chamber 10 connected to a vacuum exhaust system. The film forming chamber 10 includes a substrate stage 12, an evaporation source 16, an exhaust port 18 connected to a vacuum exhaust system, and the like. Substrate holding means may be added to the substrate stage 12. The substrate holding means includes a substrate chuck 31 for fixing the substrate 30 and a mask chuck 33 for fixing a shadow mask 32 having an opening in a region where a film is to be formed. That is, the substrate holding means is configured to expose and hold one surface of the substrate 30 or at least a part thereof with respect to the evaporation source. The substrate chuck 31 and the mask chuck 33 mechanically hold the end portions of the substrate 30 and the shadow mask 32 by the claw at the tip. In addition, a device that holds the substrate 30 and the shadow mask 32 by electromagnetic action may be applied.

The substrate 30 on which the thin film is deposited is held in a substantially planar state by the substrate holding means of the substrate stage 12 and is disposed opposite to the evaporation source 16. The film forming chamber 10 is provided with a light introduction window 14 a through which a laser beam is incident substantially parallel to the substrate 30. That is, a light introduction window 14 a for introducing a laser beam is provided in the film forming chamber 10 so as not to enter the deposition surface of the thin film.

The laser beam introduced into the film forming chamber 10 acts on the vapor deposition material evaporated or sublimated from the evaporation source 16. For this purpose, the evaporation source 16 and the light introduction window 14a are arranged so that the irradiation direction of the laser beam and the scattering direction of the vapor deposition material intersect. Of course, the arrangement of the light introduction window 14a is not uniquely determined in order to maintain the above-described relationship, and can be arbitrarily arranged using a reflection plate for the laser beam.

The distance between the position where the laser beam passes and the substrate 30 is preferably 0.01 mm or more and 0.1 mm or less for the reason described in the first embodiment.

Since the laser beam is introduced into the film forming chamber 10 so as to intersect the direction of scattering of the vapor deposition material, the beam shape of the laser beam spreads in a direction parallel to the thin film deposition surface of the substrate 30 as shown in FIG. It is preferable. That is, laser beam irradiation means for irradiating a laser beam between the evaporation source 16 and the substrate stage 12 substantially parallel to one surface of the substrate 30 includes a laser light source 22 and an optical system 23. Further, a light introduction window 14a provided in the film forming chamber 10 is also combined as an additional element. Therefore, it is preferable to provide an optical system 23 that shapes the laser beam emitted from the laser light source 22. The optical system 23 is provided between the laser light source 22 and the light introduction window 14a, but may be provided in the film forming chamber 10.

As an example of the configuration of the optical system 23, a combination of a beam expander 24 and a beam homogenizer 26 from the laser light source 22 side can be applied. The beam expander 24 is a combination of a concave cylindrical lens 36 (or a concave lens) and a convex cylindrical lens 38 (or a convex lens), so that the beam width of the laser beam emitted from the laser light source 22 can be increased. . The beam homogenizer 26 is for uniformizing the energy density distribution of a laser beam that oscillates in, for example, the TEM00 mode and has a Gaussian distribution. Therefore, as the beam homogenizer 26, a combination of the convex cylindrical lens array 40 and the concave cylindrical lens array 42 can be applied. Thereby, the energy density distribution of the laser beam in the direction parallel to the thin film deposition surface of the substrate 30 can be made uniform.

The laser light source 22 is preferably one that can emit light having a wavelength in the visible light region to the infrared light region, and a gas laser, a solid laser, or the like can be applied. For example, the fundamental wave (1.06 μm) of the YVO ₄ laser, the second harmonic (532 nm), the fundamental wave (10.6 μm) of the carbon dioxide laser can be applied. As the gas laser, for example, an Ar laser, a Kr laser, a CO ₂ laser, or the like can be applied. As the solid-state laser, for example, a YAG laser, a YLF laser, a YAlO ₃ laser, a GdVO ₄ laser, a KGW laser, a KYW laser, an alexandrite laser, a Ti: sapphire laser, a Y ₂ O ₃ laser, a YVO ₄ laser, or the like can be applied. it can. A YAG laser, a Y ₂ O ₃ laser, a GdVO ₄ laser, a YVO ₄ laser, and the like are also called ceramic lasers. Examples of the metal vapor laser include a helium cadmium laser.

In addition, a continuous wave laser is preferably used as the laser light source 22 in that energy can be continuously supplied, but a pulse laser having a repetition frequency of 10 MHz or more can also be used. If the pulse interval of the laser is shorter than the time from when the evaporated molecules are excited to the return to the ground state, the excited molecule flux can be continuously applied to the deposition surface of the thin film.

The laser beam incident on the film forming chamber 10 is applied to the light receiving plate 28. Although the light receiving plate 28 is not essential, it is possible to prevent scattering of the laser beam by using a light absorber. Further, a light reflector may be used as the light receiving plate 28 and the laser beam may be reincident on the film forming chamber 10. In addition, an optical sensor may be provided to detect the laser beam intensity and control the output of the laser light source 22.

Further, a plurality of light introducing windows 14a shown in FIGS. 5 and 6 may be provided in the film forming chamber 10 to form a film by introducing a plurality of laser beams.

As the evaporation source 16, a resistance heating method using a metal boat such as Ti, a ceramic crucible, or the like, an electron beam heating method, or the like can be applied. Further, the molecular beam may be controlled by applying a Knudsen cell.

In the case of co-evaporation using a plurality of vapor deposition materials, a plurality of evaporation sources 16 may be provided. Further, a shutter 20 may be provided between the evaporation source 16 and the substrate stage 12 so that the timing at which the vapor deposition material reaches the substrate 30 can be controlled. The pressure in the film formation chamber 10 at the time of film formation is not limited to a reduced pressure as long as it is in a pressure range where vapor deposition is possible. The pressure is preferably about 10 ⁻⁵ Pa to 10 ⁻¹ Pa.

Further, in order to form a thin film with good uniformity on the substrate 30, the substrate 30 or the evaporation source 16, or both the substrate 30 and the evaporation source 16 are movably disposed, and film formation is performed, for example, by raster scanning. Also good. By adopting such a configuration, a glass substrate having outer dimensions of sixth generation 1500 mm × 1800 mm, seventh generation 1870 mm × 2200 mm, and eighth generation 2160 mm × 2400 mm can be easily used as a mother glass of a flat panel display. A film can be formed.

As described above, according to the film forming apparatus according to the present embodiment, by performing film formation by irradiating the evaporated molecules with the laser beam, the evaporated molecules are excited or activated, and the thin film or the A homogeneous thin film with few defects can be formed.

(Embodiment 4)
In the present embodiment, a light emitting element that can be manufactured by applying the film forming method and the film forming apparatus of the present invention will be exemplified. Below, it demonstrates using FIG.

FIG. 7 is a diagram showing an element structure of a light emitting element that can be manufactured by the film forming method and the film forming apparatus of the present invention. In the light-emitting element, a layer 703 containing a light-emitting substance is provided between the first electrode 701 and the second electrode 702. In this embodiment, the case where the first electrode 701 functions as an anode and the second electrode 702 functions as a cathode is illustrated. In addition, the case where the layer 703 containing a light-emitting substance includes a hole injection layer 711, a hole transport layer 712, a light-emitting layer 713, an electron transport layer 714, and an electron injection layer 715 is illustrated. The structure is not limited, and other element structures may be applied.

The film formation method and film formation apparatus of the present invention as described in Embodiments 1 to 3 include any of the hole injection layer 711, the hole transport layer 712, the light emitting layer 713, the electron transport layer 714, and the electron injection layer 715. It can also be used when forming a layer. That is, a light-emitting element having a long lifetime can be obtained by vapor-depositing a specific substance described below using the film formation method or film formation apparatus of the present invention as described in Embodiments 1 to 3. In particular, by applying the present invention to the light-emitting layer 713, a light-emitting element with high emission efficiency can be obtained. However, the material to be deposited is not limited to the materials described below, and various other materials can be used.

As a material constituting the hole injection layer 711, molybdenum oxide (MoOx), vanadium oxide (VOx), ruthenium oxide (RuOx), tungsten oxide (WOx), manganese oxide (MnOx), or the like is used. Can do. In addition, phthalocyanine compounds such as phthalocyanine (abbreviation: H ₂ Pc) and copper phthalocyanine (CuPC), 4,4 ′, 4 ″ -tris (N, N-diphenylamino) triphenylamine (abbreviation: TDATA) ), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: m-MTDATA), 4,4′-bis [N- (1- Naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4′-bis [N- (3-methylphenyl) -N-phenylamino] biphenyl (abbreviation: TPD), 4,4′-bis [ An aromatic amine compound such as N- (9,9-dimethylfluoren-2-yl) -N-phenylamino] biphenyl (abbreviation: DFLDPBi) can also be used. Alternatively, the hole-injecting layer 711 can be formed by co-evaporation of the above-described substance and a substance that exhibits an electron accepting property with respect to the substance. As a substance exhibiting an electron accepting property, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (F ₄ -TCNQ) or the like can be typically used. Note that the hole-injection layer 711 can also be formed by mixing or stacking the above substances.

As a substance constituting the hole transport layer 712, an aromatic amine compound such as NPB, TPD, or DFLDPBi described above can be typically used. Note that the hole-transport layer 712 can be formed by mixing or stacking the above substances.

Examples of the substance that forms the electron transport layer 714 include tris (8-quinolinolato) aluminum (abbreviation: Alq), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), bis [2- (2-hydroxyphenyl) benzoxazolate ] In addition to metal complexes such as zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ), 2- (4-biphenylyl) -5 -(4-tert-butylphenyl) -1,3,4-oxadiazole (abbreviation: PBD) and 1,3-biphenyl [5- (p-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD-7), 3- (4-tert-butylphenyl) -4-phenyl- 5- (4-biphenylyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-tert-butylphenyl) -4- (4-ethylphenyl) -5- (4-biphenylyl) -1 2,4-triazole (abbreviation: p-EtTAZ), bathophenanthroline (abbreviation: BPhen), bathocuproine (abbreviation: BCP), and the like can be used. Note that the electron-transport layer 714 can also be formed by mixing or stacking the above substances.

As a substance constituting the electron injection layer 715, an alkali such as lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF ₂ ), etc., in addition to the substance capable of constituting the electron transport layer 714 described above. Metal or alkaline earth metal compounds can be used.

Examples of the light-emitting substance used for the light-emitting layer 713 include coumarin derivatives such as coumarin 6 and coumarin 545T, quinacridone derivatives such as N, N′-dimethylquinacridone and N, N′-diphenylquinacridone, N-phenylacridone and N-methyl. Acridone derivatives such as acridone, 2-tert-butyl-9,10-di (2-naphthyl) anthracene (abbreviation: t-BuDNA), 9,10-diphenylanthracene, rubrene, perifrantene, 2,5,8,11 -Condensed aromatic compounds such as tetra (tert-butyl) perylene (abbreviation: TBP), pyran derivatives such as 4-dicyanomethylene-2- [p- (dimethylamino) styryl] -6-methyl-4H-pyran, 4 -Amine derivatives such as (2,2-diphenylvinyl) triphenylamine Etc., and the like. A phosphorescent compound can also be used, and bis {2- (p-tolyl) pyridinato} iridium (III) acetylacetonate or bis {2- (2′-benzothienyl) pyridinato} iridium (III) acetylacetonate Iridium complexes such as bis {2- (4,6-difluorophenyl) pyridinato} iridium (III) picolinate, (acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium, 2,3 , 7,8,12,13,17,18-octaethyl-21H, 23H-porphyrin-platinum complex and the like, 4,7-diphenyl-1,10-phenanthroline tris (2-thenoyltrifluoroacetonato) europium And rare earth complexes such as (III).

Alternatively, the light-emitting layer 713 may be formed by dispersing the above-described light-emitting substance as a guest material in a host material. In this case, the light-emitting layer 713 can be formed by co-evaporation of a guest material and a host material. As the host material for dispersing the light-emitting substance, various materials such as the substance constituting the hole transport layer 712 and the substance constituting the electron transport layer 714 can be used. Specifically, for example, in addition to NPB and Alq described above, 2,3-bis (4-triphenylamino) quinoxaline (abbreviation: TPAQn), 2,3-bis {4- [N- (4-biphenylyl)] -N-phenylamino] phenyl} quinoxaline (abbreviation: BPAPQ) and the like. Specifically, a substance having a higher LUMO level and a lower HOMO level than a light-emitting substance can be used. In addition, a plurality of host materials for dispersing the light-emitting substance can be used. For example, a substance that suppresses crystallization, such as rubrene, may be further added to suppress crystallization.

Note that the light-emitting layer 713 is not necessarily a single layer, and can be formed by stacking the above structures.

Although there is no particular limitation on the material constituting the first electrode 701, it is preferably formed of a material having a high work function when functioning as an anode as in this embodiment. Specifically, indium tin oxide (ITO), indium tin oxide containing silicon oxide (ITSO), indium zinc oxide (IZO), gold (Au), platinum (Pt), nickel (Ni) , Tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), or the like can be used. Note that the first electrode 701 can be formed by, for example, a sputtering method, an evaporation method, or the like.

There is no particular limitation on the substance forming the second electrode 702, but a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like with a low work function (specifically, 3.8 eV or less) can be used. Specific examples of such a cathode material include elements belonging to Group 1 or Group 2 of the periodic table of elements, that is, alkali metals such as lithium (Li) and cesium (Cs), and magnesium (Mg), calcium (Ca), Examples thereof include alkaline earth metals such as strontium (Sr), alloys containing these (MgAg, AlLi), rare earth metals such as europium (Eu) and ytterbium (Yb), and alloys containing these.

Note that in the light-emitting element, one or both of the first electrode 701 and the second electrode 702 needs to be a light-transmitting electrode.

In this example, an example of manufacturing a light-emitting element using the film formation method of the present invention is illustrated. For the sake of explanation, the reference numerals used in FIG. 7 are cited.

First, a glass substrate on which an indium tin silicon oxide film is formed with a thickness of 110 nm is prepared. The surface of the indium tin silicon oxide film is covered with an insulating film so that the surface is exposed with a size of 2 mm square. Note that the indium tin silicon oxide film is the first electrode 701 that functions as an anode of the light-emitting element. As a pretreatment for forming a light emitting element on this substrate, the surface of the substrate is washed with a porous resin brush, baked at 200 ° C. for 1 hour, and then subjected to UV ozone treatment for 370 seconds.

Next, the substrate is fixed to a holder provided in the vacuum evaporation apparatus so that the surface on which the indium tin silicon oxide film is formed faces downward. As the vacuum deposition apparatus, a vacuum deposition apparatus having a light introduction window on the wall surface of the film formation chamber is used.

After reducing the pressure in the vacuum apparatus to 10 ⁻⁴ Pa, NPB represented by the following structural formula (i) and molybdenum oxide (VI) are NPB: molybdenum oxide (VI) = 4: 1 (mass ratio). Thus, the hole injection layer 711 is formed by co-evaporation. The film thickness is 120 nm. Molybdenum oxide is added as a substance showing electron accepting property to NPB. Next, the hole transport layer 712 is formed by evaporating NPB to a thickness of 10 nm.

Next, the light emitting layer 713 is formed while irradiating a green laser having a wavelength of 532 nm (manufactured by Coherent, Verdi-V10) from the light introduction window into the film formation chamber so as to be substantially parallel to the substrate surface. First, the light-emitting layer 713 includes Alq represented by the following structural formula (ii) and (acetylacetonato) bis [2,3-bis (4-fluorophenyl) quinoxalinato] iridium represented by the following structural formula (iii). (Abbreviation: Ir (Fdpq) ₂ (acac)) is co-evaporated so that Alq: Ir (Fdpq) ₂ (acac) = 1: 0.10 (mass ratio), and then the following structural formula (iv) BPAPQ and Ir (Fdpq) ₂ (acac) represented by the following formula are co-deposited so that BPAPQ: Ir (Fdpq) ₂ (acac) = 1: 0.10 (mass ratio). At this time, both the layer containing Alq and Ir (Fdpq) ₂ (acac) and the layer containing BPAPQ and Ir (Fdpq) ₂ (acac) are formed with a thickness of 12.5 nm. Ir (Fdpq) ₂ (acac) has an absorption band at 532 nm, which is the wavelength of the laser.

Next, the laser irradiation is finished, Alq is deposited at 12.5 nm, and BPhen represented by the following structural formula (v) is deposited at 30 nm, whereby the electron transport layer 714 is formed. Further, 1 nm of lithium fluoride (LiF) is evaporated on the electron transport layer 714 to form an electron injection layer 715. Finally, a 200-nm-thick aluminum film is formed as the second electrode 702 functioning as a cathode, whereby a light-emitting element can be obtained.

In this example, a light-emitting device having the light-emitting element of the present invention will be described.

In this embodiment, an active light-emitting device in which driving of a light-emitting element is controlled by a transistor will be described. In this embodiment, a light-emitting device having the light-emitting element of the present invention in a pixel portion will be described with reference to FIG. 8A is a top view illustrating the light-emitting device, and FIG. 8B is a cross-sectional view taken along lines A-A ′ and B-B ′ in FIG. 8A. Reference numeral 601 indicated by a dotted line denotes a driving circuit portion (source side driving circuit), 602 denotes a pixel portion, and 603 denotes a driving circuit portion (gate side driving circuit). Reference numeral 604 denotes a sealing substrate, reference numeral 605 denotes a sealing material, and the inside surrounded by the sealing material 605 is a space 607.

Note that a lead wiring 608 in FIG. 8B is a wiring for transmitting signals input to the source side driver circuit 601 and the gate side driver circuit 603, and is from an FPC (flexible printed circuit) 609 serving as an external input terminal. Receives a video signal, a clock signal, a start signal, a reset signal, and the like. Although only the FPC is shown here, a printed wiring board (PWB) may be attached to the FPC. The light-emitting device in this specification includes not only a light-emitting device body but also a state in which an FPC or a PWB is attached thereto.

Next, a cross-sectional structure is described with reference to FIG. A driver circuit portion and a pixel portion are formed over the element substrate 610. Here, a source-side driver circuit 601 that is a driver circuit portion and one pixel in the pixel portion 602 are illustrated.

Note that the source side driver circuit 601 is a CMOS circuit in which an n-channel TFT 623 and a p-channel TFT 624 are combined. The TFT forming the driving circuit may be formed by a known CMOS circuit, PMOS circuit or NMOS circuit. In this embodiment, a driver integrated type in which a drive circuit is formed on a substrate is shown. However, this is not always necessary, and the drive circuit can be formed outside the substrate.

The pixel portion 602 is formed by a plurality of pixels including a switching TFT 611, a current control TFT 612, and a first electrode 613 electrically connected to the drain thereof. Note that an insulator 614 is formed so as to cover an end portion of the first electrode 613. Here, the insulator 614 is formed by using a positive photosensitive acrylic resin film.

In order to improve the coverage, a curved surface having a curvature is formed at the upper end or the lower end of the insulator 614. For example, when positive photosensitive acrylic is used as a material for the insulator 614, it is preferable that only the upper end portion of the insulator 614 has a curved surface with a curvature radius (0.2 μm to 3 μm). As the insulator 614, either a negative type that becomes insoluble in an etchant by light irradiation or a positive type that becomes soluble in an etchant by light irradiation can be used.

Over the first electrode 613, a layer 616 containing a light-emitting substance and a second electrode 617 are formed. At least one of the first electrode 613 and the second electrode 617 has a light-transmitting property, and light emitted from the layer 616 containing a light-emitting substance can be extracted to the outside.

Note that various methods can be used for forming the first electrode 613, the layer 616 containing a light-emitting substance, and the second electrode 617. Specifically, chemicals such as resistance heating vapor deposition, vacuum deposition such as electron beam vapor deposition (EB vapor deposition), physical vapor deposition (PVD) such as sputtering, metal organic CVD, hydride transport low pressure CVD, etc. Vapor phase epitaxy (CVD), atomic epitaxy (ALE), or the like can be used. In addition, an inkjet method, a spin coating method, or the like can be used. Moreover, you may form using the different film-forming method for each electrode or each layer.

Further, the sealing substrate 604 is bonded to the element substrate 610 with the sealant 605, whereby the light-emitting element 618 is provided in the space 607 surrounded by the element substrate 610, the sealing substrate 604, and the sealant 605. Yes. Note that the space 607 is filled with a filler, and may be filled with a sealant 605 in addition to an inert gas (such as nitrogen or argon).

Note that an epoxy-based resin is preferably used for the sealant 605. Moreover, it is desirable that these materials are materials that do not transmit moisture and oxygen as much as possible. In addition to a glass substrate or a quartz substrate, a plastic substrate made of FRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride), Mylar, polyester, acrylic, or the like can be used as a material for the sealing substrate 604.

As described above, a light-emitting device having the light-emitting element of the present invention can be obtained.

The light-emitting device of this example includes the light-emitting element described in the embodiment. The light-emitting element described in the embodiment can operate with a low driving voltage. Moreover, high luminous efficiency can be realized. Thus, a light-emitting device with reduced power consumption can be obtained.

Further, since the light-emitting device of this embodiment does not require a high withstand voltage driving circuit, the manufacturing cost of the light-emitting device can be reduced. In addition, the light emitting device can be reduced in weight and the drive circuit portion can be reduced in size.

In this example, an electronic device of the present invention including the light-emitting device shown in Example 2 as part thereof will be described. The electronic device of this example includes a light-emitting element manufactured using the film formation method or the film formation apparatus of the present invention. Therefore, since the light-emitting element with reduced driving voltage is included, an electronic device with reduced consumption electrodes can be provided.

As an electronic device manufactured using the light emitting device of the present invention, a video camera, a digital camera, a goggle type display, a navigation system, a sound reproducing device (car audio, audio component, etc.), a computer, a game device, a portable information terminal (mobile) Display device capable of playing back a recording medium such as a computer, a mobile phone, a portable game machine, or an electronic book) and a recording medium (specifically, a digital versatile disc (DVD)) and displaying the image And the like). Specific examples of these electronic devices are shown in FIGS.

FIG. 9A illustrates a television device according to the present invention, which includes a housing 9101, a supporting base 9102, a display portion 9103, a speaker portion 9104, a video input terminal 9105, and the like. In this television device, the display portion 9103 is formed by arranging light-emitting elements manufactured using the film formation method or the film formation apparatus of the present invention in a matrix. The light-emitting element has characteristics of high light emission efficiency and low driving voltage. Since the display portion 9103 including the light-emitting elements has similar characteristics, the television set according to the present invention has little deterioration in image quality and low power consumption. With such characteristics, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the television device; therefore, the housing 9101 and the support base 9102 can be reduced in size and weight. In the television device according to the present invention, low power consumption, high image quality, and reduction in size and weight are achieved, so that a product suitable for a living environment can be provided.

FIG. 9B illustrates a computer according to the present invention, which includes a main body 9201, a housing 9202, a display portion 9203, a keyboard 9204, an external connection port 9205, a pointing mouse 9206, and the like. In this computer, the display portion 9203 is formed by arranging light-emitting elements manufactured using the film formation method or the film formation apparatus of the present invention in a matrix. The light-emitting element has characteristics of high light emission efficiency and low driving voltage. Since the display portion 9203 which includes the light-emitting elements has similar characteristics, the computer according to the present invention has no deterioration in image quality and low power consumption. With such characteristics, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the computer, so that the main body 9201 and the housing 9202 can be reduced in size and weight. In the computer according to the present invention, low power consumption, high image quality, and reduction in size and weight are achieved; therefore, a product suitable for the environment can be provided.

FIG. 9C illustrates a mobile phone according to the present invention, which includes a main body 9401, a housing 9402, a display portion 9403, an audio input portion 9404, an audio output portion 9405, operation keys 9406, an external connection port 9407, an antenna 9408, and the like. . In this cellular phone, the display portion 9403 is formed by arranging light-emitting elements manufactured using the film formation method or the film formation apparatus of the present invention in a matrix. The light-emitting element has characteristics of high light emission efficiency and low driving voltage. Since the display portion 9403 including the light-emitting elements has similar characteristics, the mobile phone according to the present invention has no deterioration in image quality and low power consumption. With such characteristics, the deterioration compensation function and the power supply circuit can be significantly reduced or reduced in the mobile phone, so that the main body 9401 and the housing 9402 can be reduced in size and weight. Since the cellular phone according to the present invention has low power consumption, high image quality, and reduced size and weight, a product suitable for carrying can be provided.

FIG. 9D illustrates a camera according to the present invention, which includes a main body 9501, a display portion 9502, a housing 9503, an external connection port 9504, a remote control receiving portion 9505, an image receiving portion 9506, a battery 9507, an audio input portion 9508, and operation keys 9509. , An eyepiece 9510 and the like. In this camera, the display portion 9502 is formed by arranging light-emitting elements manufactured using the film formation method or the film formation apparatus of the present invention in a matrix. The light-emitting element has characteristics of high light emission efficiency and low driving voltage. Since the display portion 9502 which includes the light-emitting elements has similar characteristics, the camera according to the present invention has no deterioration in image quality and low power consumption. With such characteristics, a deterioration compensation function and a power supply circuit can be significantly reduced or reduced in the camera, so that the main body 9501 can be reduced in size and weight. Since the camera according to the present invention has low power consumption, high image quality, and small size and light weight, a product suitable for carrying can be provided.

In this example, a method for synthesizing 2,3-bis {4- [N- (4-biphenylyl) -N-phenylamino] phenyl} quinoxaline (abbreviation: BPAPQ) used as the material of the light-emitting element in Example 1 Is specifically exemplified.

[Step 1; Synthesis of 2,3-bis (4-bromophenyl) quinoxaline]
Under a nitrogen atmosphere, a chloroform solution (200 mL) of 30.0 g (81.5 mmol) of 4,4′-dibromobenzyl and 9.00 g (83.2 mmol) of o-phenylenediamine was heated at 80 ° C. for 3 hours to reflux. . After the reaction solution was cooled to room temperature, the reaction solution was washed with water. The aqueous layer was extracted with chloroform, combined with the organic layer, washed with saturated brine, and the organic layer was further dried over magnesium sulfate. Thereafter, filtration and concentration were performed to obtain 33 g of a target white solid of 2,3-bis (4-bromophenyl) quinoxaline in a yield of 92%. The synthesis scheme of Step 1 is shown in (d-1) below.

[Step 2; Synthesis of N- (4-biphenyl) -N-phenylamine]
Under nitrogen atmosphere, xylene suspension of 20.0 g (85.8 mmol) of 4-bromobiphenyl, 16.0 g (172 mmol) of aniline, 0.19 g (0.858 mmol) of palladium acetate, and 23.7 (172 mmol) of potassium carbonate To (157 mL) was added 5.2 g (2.5 mmol) of tri-tert-butylphosphine (10% hexane solution), and the mixture was refluxed at 120 ° C. for 10 hours. After completion of the reaction, the reaction mixture was washed with water, and the aqueous layer was extracted with toluene. The toluene layer and the organic layer were combined, washed with saturated brine, and dried over magnesium sulfate. Thereafter, the mixture was filtered and concentrated, and the residue was purified by silica gel chromatography (developing solvent: toluene) and concentrated, and 13.5 g of a white solid of N- (4-biphenyl) -N-phenylamine was obtained in a yield of 64%. I got it. The synthesis scheme of Step 2 is shown in (d-2) below.

[Step 3; Synthesis of BPAPQ]
Under a nitrogen atmosphere, 2,3-bis (4-bromophenyl) quinoxaline 5.0 g (11.4 mmol), N- (4-biphenyl) -N-phenylamine 6.1 g (25.0 mmol), bis (di Benzylideneacetone) palladium 0.33 g (0.58 mmol) and tert-butoxy sodium 5.5 g (56.8 mmol) in a toluene suspension (80 mL) 1.2 g (0% hexane solution) of tri-tertbutylphosphine (10% hexane solution) .58 mmol) was added and heated at 80 ° C. for 7 hours. After completion of the reaction, the reaction solution was cooled to room temperature, and the precipitate was filtered. The filtrate was dissolved again in toluene, this solution was filtered using Celite, Florisil, and alumina, and the filtrate was concentrated. The residue was recrystallized from chloroform-hexane to obtain 8.1 g of BPAPQ yellow solid in a yield of 78%. The synthesis scheme of Step 3 is shown in (d-3) below.

The analysis results of BPAPQ by proton nuclear magnetic resonance spectroscopy ( ¹ H-NMR) were as follows.
¹ H-NMR (300 MHz, CDCl ₃ ); δ = 8.16-8.13 (m, 2H), 7.75-7.72 (m, 2H), 7.58-7.04 (m, 36H) )

The schematic diagram showing a mode that the film | membrane of the organic compound is formed with the organic molecule deposited on the board | substrate. 2A and 2B illustrate a film forming method according to the present invention and its principle. The schematic diagram showing a mode that the film | membrane of the organic compound is formed with the molecule | numerator of the host material and the guest material which were deposited on the board | substrate. 2A and 2B illustrate a film forming method according to the present invention and its principle. FIG. 6 illustrates a configuration of a film forming apparatus according to a third embodiment. FIG. 6 illustrates a configuration of a film forming apparatus according to a third embodiment. FIG. 6 shows an element structure of a light-emitting element according to Embodiment 4. 6A and 6B illustrate a light-emitting device of Example 2. 6A and 6B illustrate an electronic device of Embodiment 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Deposition chamber 12 Substrate stage 14a Light introduction window 14b Light introduction window 16 Evaporation source 18 Exhaust port 20 Shutter 22 Laser light source 23 Optical system 24 Beam expander 26 Beam homogenizer 28 Light receiving plate 30 Substrate 31 Substrate chuck 32 Shadow mask 33 Mask chuck 36 Concave Cylindrical Lens 38 Convex Cylindrical Lens 40 Convex Cylindrical Lens Array 42 Concave Cylindrical Lens Array 100 Substrate 101 Organic Molecule 110 Organic Compound Film 120 Gap 200 Deposition Chamber 201 Substrate Holding Unit 202 Substrate 203 Laser Beam 204 Dense Film 210 Evaporation Source 211 Organic compound 212 Organic compound

Claims (6)

A plurality of evaporation sources each filled with a plurality of different organic compounds;
A film holding chamber having a substrate holding means for fixing the substrate,
Vaporizing the plurality of organic compounds simultaneously,
Irradiating the vaporized organic compound with a laser beam substantially parallel to one surface of the substrate,
Depositing the plurality of organic compounds on the substrate;
The plurality of organic compounds have a host material and a guest material,
The film forming method , wherein a wavelength of the laser beam is a wavelength for exciting the guest material . A plurality of evaporation sources filled with an organic compound, and a substrate holding means for exposing and holding one surface or at least a part of the substrate;
Laser beam irradiation means for irradiating a laser beam substantially parallel to one surface of the substrate,
The laser beam irradiation means is provided to irradiate the laser beam to the organic compound vaporized from the evaporation source,
The plurality of evaporation sources includes a host material and a guest material,
The film forming apparatus , wherein the wavelength of the laser beam is a wavelength for exciting the guest material . A plurality of evaporation sources filled with an organic compound, and a substrate holding means for exposing and holding one surface or at least a part of the substrate;
A light introduction window provided in the film forming chamber;
Laser beam irradiation means for irradiating the film forming chamber with a laser beam that is substantially parallel to one surface of the substrate from the light introduction window,
The laser beam irradiation means is provided to irradiate the laser beam to the organic compound vaporized from the evaporation source,
The plurality of evaporation sources includes a host material and a guest material,
The film forming apparatus , wherein the wavelength of the laser beam is a wavelength for exciting the guest material . In claim 2 or claim 3,
As a laser light source of the laser beam irradiation means, Ar laser, Kr laser, carbon dioxide laser, YAG laser, YLF laser, YAlO ₃ laser, GdVO ₄ laser, KGW laser, KYW laser, alexandrite laser, Ti: sapphire laser, Y ₂ O A film forming apparatus using any one of a laser oscillator selected from a ₃ laser, a YVO ₄ laser, a ceramics laser, and a helium cadmium laser. In any one of Claims 2 thru | or 4,
A film forming apparatus, wherein a light receiving plate for absorbing the laser beam is provided at an irradiation end of the laser beam. In any one of Claims 2 thru | or 5,
The film forming apparatus is characterized in that an interval between the substrate and the laser irradiation position is 0.01 mm or more and 0.1 mm or less.

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