JP4802579B2 - Microstructure manufacturing method, donor substrate, layout design apparatus, and layout program - Google Patents

Description

  The present invention relates to a microstructure manufacturing method and a donor substrate, and more particularly to a microstructure manufacturing method and a donor substrate in which a thin film pattern is arranged so as to improve the area efficiency of the donor substrate.

  The additive manufacturing method has been rapidly spread in recent years as a method for manufacturing a complex-shaped three-dimensional object designed by a computer in a short time. A three-dimensional object modeled by the additive manufacturing method is used as a model (prototype) of parts of various devices in order to examine the operation and shape of parts. Recently, a technique for applying the additive manufacturing method not only to relatively large parts of several centimeters but also to micro parts such as micro gears and micro optical parts has been reported (for example, see Patent Document 1).

In this manufacturing method, a donor substrate in which a plurality of thin film patterns corresponding to each cross section of a microstructure is formed on a substrate is manufactured, a target substrate is disposed facing the donor substrate, and the donor substrate and the target substrate are positioned. By repeating the press contact and separation, a microstructure in which a plurality of thin film patterns are transferred and laminated on a target substrate is produced.
Japanese Patent No. 3161362

  However, according to the conventional microstructure manufacturing method, as shown in FIG. 18, the region where the thin film patterns 602-1 to 602-3 formed on the donor substrate are arranged depends on the shape and size of the thin film pattern. Therefore, there is a problem that the area of the donor substrate to be used becomes larger than necessary.

  In addition, according to the conventional method for manufacturing a microstructure, when there is a height difference between thin film patterns of the same layer, there is a problem that transfer of a low-height portion to a target substrate may fail. is there.

  Accordingly, an object of the present invention is to provide a manufacturing method of a microstructure in which a thin film pattern is arranged so as to improve the area efficiency of the donor substrate, a donor substrate, a layout design apparatus, and a layout program.

  Another object of the present invention is to provide a microstructure capable of transferring all thin film patterns to a target substrate without failure even when there is a height difference between thin film patterns of the same layer. A manufacturing method, a donor substrate, a layout design apparatus, and a layout program are provided.

According to one embodiment of the present invention, in order to achieve the above object, in a method for manufacturing a microstructure formed by stacking a plurality of thin film patterns, the thin film pattern is formed based on the shape, size, and stacking position of the plurality of thin film patterns. A first step of performing an arrangement design; a second step of forming the plurality of thin film patterns on the donor substrate based on the arrangement design; and a target substrate arranged to face the donor substrate, the donor substrate performs the positioning of the target substrate, pressed and separated from the, and a third step of sequentially laminating a plurality of thin film patterns on the target substrate, the layout design of the thin film pattern in the first step, 1 Planar area occupied on the donor substrate of the first thin film pattern and the stamp portion when the thin film pattern of the layer is transferred to the stamp portion of the target substrate The stamp area of the first thin film pattern is the sum of the areas plus a predetermined margin for patterning error, and the n-1 thin film pattern is transferred to the n (n is a natural number of 2 or more) layer An n-th thin film pattern obtained by adding a predetermined margin for a patterning error to the union of the planar regions on the donor substrate of the n-th thin film pattern and the n-1 thin film pattern And a stamping area of the nth layer is arranged so that the nth thin film pattern is in contact with the stamping area of the (n−1) th thin film pattern .

According to another aspect of the present invention, in order to achieve the above object, in the donor substrate having a plurality of thin film patterns on the substrate, the plurality of thin film patterns are based on the arrangement design of the thin film pattern according to claim 1. it formed Te provides a donor substrate according to claim.

In one embodiment of the present invention, in order to achieve the above object, input means for inputting, as input information, the shape, size, and stacking position of a plurality of thin film patterns corresponding to a cross-sectional shape of a microstructure, and the input information Based on the above, the union of the planar thin film pattern on the donor substrate of the stamp portion and the first thin film pattern when the first thin film pattern is transferred to the stamp portion of the target substrate has a predetermined error with respect to the patterning error. What added the margin is the stamp area of the first thin film pattern, and when the n-1 thin film pattern is transferred to the n (n is a natural number of 2 or more) layer, The sum of the planar regions occupying the donor substrate of the (n-1) th thin film pattern plus a predetermined margin for patterning error is the nth thin film pattern star. And a processing means for performing layout design of the plurality of thin film patterns so that the nth thin film pattern is in contact with the stamp area of the (n−1) th thin film pattern. A layout design apparatus characterized by the above is provided.

In one embodiment of the present invention, in order to achieve the above object, a first step of receiving, as input information, the shape, size, and stacking position of a plurality of thin film patterns corresponding to a cross-sectional shape of a microstructure, and the input Based on the information, a predetermined set for patterning error is added to the union of the thin film pattern of the first layer when the first thin film pattern is transferred to the stamp portion of the target substrate and the planar region occupied on the donor substrate of the stamp portion. When the n-1th thin film pattern is transferred to the n (n is a natural number of 2 or more) layer, the nth thin film pattern is transferred. And the n-1th thin-film pattern obtained by adding a predetermined margin for the patterning error to the union of the planar regions on the donor substrate of the n-1th thin-film pattern A second step of designing the arrangement of the plurality of thin film patterns, wherein the thin film pattern of the nth layer is arranged so as to be in contact with the stamp area of the thin film pattern of the (n-1) th layer. A layout program for causing a computer to execute is provided.

  According to the microstructure manufacturing method, the layout design apparatus, and the layout program according to one embodiment of the present invention, the donor performs the layout design of the thin film pattern based on the shape, size, and stacking position of the thin film pattern. The area efficiency of the substrate can be improved.

  According to the donor substrate according to one embodiment of the present invention, a donor substrate with high area efficiency can be obtained.

  In the first step of the manufacturing method of the microstructure according to one embodiment of the present invention, the union of the planar regions on the donor substrate when the first thin film pattern is transferred to the stamp portion of the target substrate (When n is 1), or the union of planar regions occupying those donor substrates when the n-1th thin film pattern is transferred to the nth layer (when n is a natural number of 2 or more) Furthermore, the arrangement design of the thin film pattern is performed based on the stamp area of the thin film pattern of the nth layer, which is obtained by adding a predetermined margin M to the patterning error.

  The nth thin film pattern is arranged at a position that does not overlap the stamp area of the 1st to (n-1) th thin film patterns.

  Margins occur during stacking, including mechanical errors such as alignment microscope identification accuracy errors, pressure axis repeat accuracy errors, target substrate or donor substrate stage positioning accuracy errors, patterning accuracy errors such as photolithography, etc. It is determined from an error parameter group consisting of environmental errors caused by thermal expansion and vibration.

  In the second step of the method for manufacturing a microstructure according to one embodiment of the present invention, the release layer is formed over the donor substrate by a sputtering method, a molecular beam epitaxial method, a chemical vapor deposition method, or a vacuum evaporation method. A general thin film forming method such as a spin coating method or a spin coating method can be used.

  The release layer is one in which the adhesive strength between the release layer and the thin film pattern is adjusted so that the thin film pattern is easily peeled off from the release layer when transferred to the stamp portion of the target substrate. For the release layer, for example, a known material such as polyimide, fluorinated polyimide, or silicon oxide can be used. Alternatively, a thermal oxide film formed by performing a thermal oxidation process on the first substrate may be used.

  For the thin film pattern, for example, a known material such as metal, semiconductor, ceramics, or plastic can be used.

  In the third step of the method for manufacturing a microstructure according to one embodiment of the present invention, the plurality of thin film patterns are preferably bonded by room temperature bonding. “Room temperature bonding” refers to direct bonding of atoms at room temperature. According to room temperature bonding, there is little change in the shape and thickness of the thin film pattern to be bonded at room temperature, and a highly accurate microstructure can be obtained. Before bonding the thin film pattern, it is preferable to clean the surface by irradiating the surface with a neutral atom beam, ion beam or the like. By cleaning, the surface is activated and a strong bond is obtained.

  The layout design apparatus according to an aspect of the present invention includes an input device such as a keyboard and a mouse, and a processing device including a CPU, a ROM, a RAM, a hard disk, and the like that perform layout design based on parameters input from the input device. And a display for displaying layout results, and an output device such as a printer.

  The input device receives, as input information, the shape, size, and stacking position of a plurality of thin film patterns corresponding to the cross-sectional shape of the microstructure. When the CPU of the processing device lays out the thin film pattern on one plane, The arrangement design of the plurality of thin film patterns is performed so that the occupied area on the plane is minimized.

  According to the present invention, the arrangement of the thin film pattern can be designed according to a predetermined algorithm, and the area efficiency of the donor substrate can be improved.

[First Embodiment]
(Structure of microstructure)
FIG. 1A is a top view of the microstructure manufactured in the first embodiment, and FIG. 1B is a cross-sectional view taken along one-dot chain line AA ′ in FIG. It is the figure seen from the direction which point.

  A microstructure including a first thin film pattern 102-1, a second thin film pattern 102-2, and a third thin film pattern 102-3 is formed on a stamp portion 101 provided on the target substrate 100. Is formed. These thin film patterns have different areas, and a microstructure is formed by laminating in order from the largest area.

(Manufacturing method of microstructure)
Next, with reference to FIGS. 2 to 4, the manufacturing method of the microstructure will be described by dividing into thin film pattern arrangement design, donor substrate production, and thin film pattern lamination.

(Thin film pattern layout design)
FIGS. 2A to 2C are top views showing a flow of thin film pattern arrangement design by the layout design apparatus, and FIG. 3 is a flowchart thereof. A program as shown in the flowchart of FIG. 3 is stored in the ROM of the processing device included in the layout design apparatus.

  First, as shown in FIG. 2A, the first thin film pattern 102-1 is arranged at an arbitrary position (step A1 in FIG. 3), and the stamp region 105-1 is obtained (step A2 in FIG. 3). ).

  Here, the stamp region of each layer is defined as follows for the first thin film pattern 102-1 and the second and subsequent thin film patterns 102-2. The stamp region 105-1 of the first thin film pattern is a predetermined set against the patterning error in the union of the planar regions occupying the donor substrate 108 when the first thin film pattern is transferred to the stamp portion of the target substrate. The stamp region 105-n of the nth layer (n is a natural number of 2 or more) with the margin 104 added is formed on the donor substrate 108 when the thin film pattern of the (n-1) th layer is transferred to the nth layer. A predetermined margin 104 for the patterning error is added to the union of the occupied planar areas.

  Here, the predetermined margin 104 for the patterning error specifically includes an identification accuracy error of the alignment microscope, a repeat accuracy error of the pressure contact axis, a positioning accuracy error of the stage on which the target substrate or the donor substrate is installed, photolithography, etc. This is determined from an error parameter group consisting of a mechanical error such as a patterning accuracy error and an environmental error caused by heat or vibration during lamination.

  As shown in FIGS. 1A and 1B, when the first thin film pattern 102-1 is transferred to the stamp portion 101 of the target substrate 100, the center thereof is transferred. The positional relationship between the first thin film pattern 102-1 after the transfer and the stamp portion transfer region 103 is as shown in FIG. In this case, since the first thin film pattern 102-1 completely fits in the stamp portion transfer region 103, the planar region that occupies the first layer thin film pattern 102-1 and the stamp portion 101 on the donor substrate 108 during transfer. Is equal to the planar area occupied by the stamp portion transfer area 103.

  A predetermined margin 104 for a patterning error is added to the union of the planar regions occupied by the first thin film pattern 102-1 and the stamp portion 101 on the donor substrate during this transfer (stamp portion transfer region 103). An eye stamp area 105-1 is obtained.

  Next, as shown in FIG. 2B, the arrangement of the second thin film pattern 102-2 is determined (step A3 in FIG. 3). At this time, when the second thin film pattern 102-2 is arranged at a position overlapping the first stamp region 105-1, the second thin film pattern 102-1 is transferred to the stamp portion 101 by two layers. The thin film pattern 102-2 of the eye is also transferred at the same time. Therefore, in order to reduce the planar area on the donor substrate 108 as much as possible without overlapping the first layer stamp area 105-1, the second layer thin film pattern 102-2 is changed to the first layer stamp area 105-1. It arrange | positions so that -1 may be touched.

  As shown in FIGS. 1A and 1B, when the second thin film pattern 102-2 is transferred to the first thin film pattern 102-1, the center thereof is transferred. The The positional relationship between the second-layer thin film pattern 102-2 and the first-layer thin film pattern transfer region 106-1 after the transfer is as shown in FIG. In this case, since the second thin film pattern 102-2 is completely contained in the first thin film pattern transfer region 106-1, the second thin film pattern 102-2 and the first thin film pattern are transferred during transfer. The union of the planar area occupied on the donor substrate 108 of 102-1 is equal to the planar area occupied by the first thin film pattern 102-1.

  A predetermined margin 104 for a patterning error is added to the union (stamp portion transfer region 103) of the planar region occupied by the second thin film pattern 102-2 and the first thin film pattern 102-1 on the donor substrate during the transfer. In addition, the stamp area 105-2 of the second layer is obtained (step A4 in FIG. 3).

  Next, as shown in FIG. 2C, the arrangement of the third-layer thin film pattern 102-3 is determined. At this time, the thin film pattern 102-3 of the third layer is not overlapped with the stamp region 105-1 of the first layer and the stamp region 105-2 of the second layer, that is, the union 107 of the stamp regions up to the second layer. -2 must be arranged at a position that does not overlap -2. Therefore, considering that the planar area occupied on the donor substrate 108 is reduced, the thin film pattern 102-3 of the third layer is formed as a union 107- of the stamp areas up to the second layer as shown in FIG. 2 so as to be in contact with two points (step A5 in FIG. 3).

  FIG. 4 is a top view showing the arrangement of the thin film patterns 102-1 to 102-3 finally determined.

(Preparation of donor substrate)
First, a release layer 109 made of polyimide, for example, is formed on the donor substrate 108 by spin coating.

  Next, a thin film is formed on the release layer 109, and this is patterned to produce first to third thin film patterns 102-1 to 102-3 having an arrangement determined as described above.

(Lamination of thin film patterns)
5A (a) to 5 (d) and 5B (e) to (h) are side views showing a manufacturing process of the microstructure. A microstructure is manufactured by stacking the first to third thin film patterns 102-1 to 102-3.

  The donor substrate 108 is placed on a lower stage (not shown) in the vacuum chamber, and the target substrate 100 including the stamp unit 101 is placed on an upper stage (not shown) in the vacuum layer. Subsequently, the inside of the vacuum chamber is evacuated to a high vacuum state or an ultrahigh vacuum state. Next, as shown in FIG. 5A (a), the lower stage and the upper stage are relatively moved in the x, y, z directions, and the direction of the rotation angle θ around the z axis to move the target substrate 100 to the donor substrate 108. On the first thin film pattern 102-1. Subsequently, the surface of the stamp portion 101 and the surface of the first thin film pattern 102-1 are irradiated with an argon atom beam for cleaning.

Next, as shown in FIG. 5A (b), the upper stage is lowered, and the donor substrate 108 and the target substrate 100 are kept at a predetermined time (for example, 5 minutes) with a predetermined load force (for example, 10 kgf / mm ² ). The stamp portion 101 and the first layer thin film pattern 102-1 are joined at room temperature by pressing.

  Next, as shown in FIG. 5A (c), when the upper stage is raised, the first thin film pattern 102-1 is peeled off from the release layer 109 and transferred to the target substrate 100 side. This is because the adhesion between the first thin film pattern 102-1 and the stamp portion 101 is greater than the adhesion between the first thin film pattern 102-1 and the release layer 109. At this time, since the second layer thin film pattern 102-2 is positioned outside the first layer stamp region 105-1, it is not simultaneously transferred.

  Next, as shown in FIG. 5A (d), the lower stage and the upper stage are relatively moved so that the target substrate 100 is positioned on the second thin film pattern 102-2. As described above, the surface of the first thin film pattern 102-1 transferred to the target substrate 100 side (the surface in contact with the release layer 109) and the surface of the second thin film pattern 102-2 are cleaned as described above. To do.

  Next, as shown in FIG. 5B (e), when the upper stage is lowered, the first thin film pattern 102-1 and the second thin film pattern 102-2 are joined, and the upper stage is raised, The second thin film pattern 102-2 is peeled off from the release layer 109 and transferred to the target substrate 100 side.

  Next, as shown in FIG. 5B (f), the lower stage and the upper stage are relatively moved to position the target substrate 100 on the third-layer thin film pattern 102-3. The surface of the second thin film pattern 102-2 and the surface of the third thin film pattern 102-3 transferred to the target substrate 100 side are cleaned as described above.

  Next, as shown in FIG. 5B (g), the upper stage is moved down to join the second thin film pattern 102-2 and the third thin film pattern 102-3, and shown in FIG. 5B (h). As described above, when the upper stage is raised, the third thin film pattern 102-3 is peeled off from the release layer 109 and transferred to the target substrate 100 side.

  Through the above steps, the microstructure shown in FIGS. 1A and 1B is manufactured.

(Effects of the first embodiment)
According to the first embodiment, the area-efficient donor substrate 108 can be manufactured by designing the arrangement of the thin film pattern according to the above algorithm.

[Second Embodiment]
In the second embodiment of the present invention, a method for transferring a thin film pattern to a target substrate when there is a height difference between the thin film patterns of the same layer in the thin film pattern corresponding to the cross-sectional shape of the microstructure will be described. To do.

  Hereinafter, the thin film pattern transfer method will be described with reference to FIGS. 6 and 7 separately for the layout design of the thin film pattern and the transfer of the thin film pattern. Since the method for manufacturing the donor substrate is the same as that in the first embodiment, description thereof is omitted.

(Thin film pattern layout design)
According to a film forming method such as electroforming, a thin film pattern growth surface is not flat even in the same substrate, and there may be a difference in height between thin film patterns of the same layer depending on the layout of the pattern.

  6A and 6B are examples of a layout in the case where there is a height difference between thin film patterns in the same layer, and a top view and a cross-sectional view in a top view A-A ′ are respectively shown.

Although the thin film pattern a112-1 and the thin film pattern b112-2 is a thin film pattern for forming the same layer of the microstructure, as shown in FIG. 6 (b), the height _{h 1} and the thin film of the thin film pattern a112-1 Unlike the height _{h 2} of the pattern b112-2 have _a relationship of h 1 _{<h 2.}

  In this case, assuming that the thin film pattern a112-1 and the thin film pattern b112-2 are separate layers, the layout design as shown in FIG. 5 is performed according to the layout design method of the thin film pattern according to the first embodiment.

  Here, the first stamp region 115-1 is a predetermined margin with respect to a patterning error in the union (stamp portion transfer region 103) of the planar region occupied by the thin film pattern a112-1 and the stamp portion 101 on the donor substrate at the time of transfer. 104 is added.

(Transfer of thin film pattern)
7A (a) to 7 (d) and 7B (e) to (f) are side views showing a manufacturing process of the microstructure. The produced thin film pattern a111-1 and thin film pattern b111-2 are transferred to the target substrate in ascending order of height. Since the apparatus to be used is the same as that of the first embodiment, the description of the overlapping parts is omitted.

  First, as shown in FIG. 7A (a), the target substrate 100 is positioned on the thin film pattern a112-1 having a height lower than the thin film pattern b112-2 of the donor substrate. Subsequently, the surface of the stamp portion 101 and the surface of the thin film pattern a112-1 are cleaned by irradiating with an argon atom beam.

Next, as shown in FIG. 7A (b), the upper stage is lowered, and the donor substrate 108 and the target substrate 100 are kept at a predetermined time (for example, 5 minutes) with a predetermined load force (for example, 10 kgf / mm ² ). The stamp part 101 and the thin film pattern a112-1 are joined at room temperature by pressing.

  Next, as shown in FIG. 7A (c), when the upper stage is raised, the thin film pattern a112-1 is peeled off from the release layer 109 and transferred to the target substrate 100 side. This is because the adhesion between the thin film pattern a 112-1 and the stamp portion 101 is greater than the adhesion between the thin film pattern a 112-1 and the release layer 109. At this time, since the thin film pattern b111-2 is located outside the first stamp region 115-1, it is not transferred at the same time.

  Next, as shown in FIG. 7A (d), the lower stage and the upper stage are relatively moved to position the target substrate 100 on the thin film pattern b111-2. As described above, the surface of the thin film pattern a112-1 transferred to the target substrate 100 side (the surface in contact with the release layer 109) and the surface of the thin film pattern b111-2 are cleaned.

  Next, as shown in FIG. 7B (e), the upper stage is lowered to join the thin film pattern a 111-1 and the thin film pattern b 111-2.

  Next, as shown in FIG. 7B (f), when the upper stage is raised, the thin film pattern b111-2 is peeled off from the release layer 109 and transferred to the target substrate 100 side.

(Effect of the second embodiment)
According to the second embodiment, even if there is a height difference between thin film patterns of the same layer, the thin film patterns are arranged separately for each thin film pattern having a different height. By transferring in order, all thin film patterns can be transferred to the target substrate without failure.

  Embodiments of the present invention are specifically described below, but the present invention is not limited thereto.

(Structure of microstructure)
FIG. 8A is a top view of the microstructure manufactured in the first embodiment. Further, FIG. 8B is a view of the cross section taken along the alternate long and short dash line AA ′ in FIG. 8A from the direction indicated by the arrow, and FIG. 8C is the view in FIG. It is the figure which looked at the cross section in dashed-dotted line BB 'from the direction which the arrow points.

  On the stamp portion 101 provided on the target substrate 100, the first thin film pattern 202-1, the second thin film pattern 202-2, the third thin film pattern 202-3, and the fourth thin film. A microstructure formed of the pattern 202-4 is formed. These thin film patterns are stacked in different directions and positions to form an overhang structure.

(Thin film pattern layout design)
9A to 9D are top views showing the flow of the layout design of the thin film pattern.

  First, as shown in FIG. 9A, the first thin film pattern 202-1 is arranged at an arbitrary position, and the stamp region 205-1 is obtained.

  As shown in FIGS. 9A and 9B, when the first thin film pattern 202-1 is transferred to the stamp portion 101 of the target substrate 100, the center thereof is transferred. The positional relationship between the first thin film pattern 202-1 after transfer and the stamp portion transfer region 103 is as shown in FIG. In this case, since the first thin film pattern 202-1 completely fits in the stamp portion transfer region 103, the planar region occupied on the donor substrate 108 by the first thin film pattern 202-1 and the stamp portion 101 at the time of transfer. Is equal to the planar area occupied by the stamp portion transfer area 103.

  A predetermined margin 104 for a patterning error is added to the union of the planar regions occupied by the first thin film pattern 202-1 and the stamp portion 101 on the donor substrate (stamp portion transfer region 103) at the time of this transfer. An eye stamp area 205-1 is obtained.

  Next, as shown in FIG. 9B, the arrangement of the second-layer thin film pattern 202-2 is determined. At this time, if the second thin film pattern 202-2 is arranged at a position overlapping the first stamp region 205-1, the second thin film pattern 202-1 is transferred to the stamp portion 101 when the second layer thin film pattern 202-2 is transferred. The thin film pattern 202-2 of the eye is also transferred at the same time. For this reason, in order to reduce the planar area occupied on the donor substrate 108 as much as possible without overlapping the first-layer stamp area 105-1, the second-layer thin film pattern 202-2 is changed to the first-layer stamp area 205. It arrange | positions so that -1 may be touched.

  As shown in FIGS. 8A and 8B, the second thin film pattern 202-2 and the first thin film pattern 202-1 are transferred so as to form an overhang structure. The positional relationship between the second thin film pattern 202-2 and the first thin film pattern transfer region 206-1 after the transfer is as shown in FIG. 9B. A predetermined margin 104 for patterning error is added to the union of the planar regions occupied by the second thin film pattern 202-2 and the first thin film pattern 202-1 on the donor substrate at the time of transfer. A stamp area 205-2 is obtained.

  Next, as shown in FIG. 9C, the arrangement of the third-layer thin film pattern 202-3 is determined. At this time, the thin film pattern 202-3 of the third layer is not overlapped with the stamp region 205-1 of the first layer and the stamp region 205-2 of the second layer, that is, the union 207 of the stamp regions up to the second layer. -2 must be arranged at a position that does not overlap -2. Therefore, in consideration of reducing the planar area occupied on the donor substrate 108, the third thin film pattern 202-3 is arranged so as to contact the union 207-2 of the stamp areas up to the second layer.

  Next, as shown in FIG. 9D, the arrangement of the fourth thin film pattern 202-4 is determined. At this time, the fourth thin film pattern 202-4 does not overlap the first stamp area 205-1, the second stamp area 205-2, and the third thin film pattern 202-3, that is, 3 It is necessary to arrange the stamp area up to the layer not to overlap the union 207-3. Therefore, in consideration of reducing the planar area occupied on the donor substrate 108, the fourth thin film pattern 202-4 is arranged so as to contact the union 207-3 of the stamp areas up to the third layer.

  FIG. 10 is a top view showing the arrangement of the thin film patterns finally determined.

(Effect of Example 1)
According to Example 1, even if the thin film pattern forms a microstructure having an overhang structure, the area efficiency can be improved by designing the arrangement according to the algorithm according to the first embodiment.

(Structure of microstructure)
FIG. 11A is a top view of the microstructure manufactured in the second embodiment, and FIG. 11B is a direction in which the arrow indicates the cross section taken along the alternate long and short dash line AA ′ in FIG. It is the figure seen from.

  On the stamp part 101 provided on the target substrate 100, the first thin film pattern 3202-1, the second thin film pattern 302-2, the third thin film pattern 302-3, and the fourth thin film pattern A microstructure including 302-4 and a fifth-layer thin film pattern 302-5 is formed. These thin film patterns have a shape having holes, and a microstructure is formed by laminating in order from the largest diameter.

(Thin film pattern layout design)
12A (a) to 12 (c) and FIGS. 12B (d) to (e) are top views showing a flow of arrangement design of a thin film pattern.

  First, as shown in FIG. 12A (a), the first thin film pattern 302-1 is arranged at an arbitrary position, and the stamp region 305-1 is obtained.

  As shown in FIGS. 11A and 11B, when the first thin film pattern 302-1 is transferred to the stamp portion 101 of the target substrate 100, the center thereof is transferred. The positional relationship between the first thin film pattern 302-1 after the transfer and the stamp portion transfer region 103 is as shown in FIG. 12A (a). In this case, since the first thin film pattern 302-1 completely fits in the stamp portion transfer region 103, the planar region occupied by the first thin film pattern 302-1 and the stamp portion 101 on the donor substrate 108 at the time of transfer. Is equal to the planar area occupied by the stamp portion transfer area 103.

  A predetermined margin 104 for patterning error is added to the union of the flat area occupied by the first thin film pattern 302-1 and the stamp portion 101 on the donor substrate (stamp portion transfer region 103) at the time of the transfer. An eye stamp area 305-1 is obtained.

  Next, as shown in FIG. 12A (b), the arrangement of the second thin film pattern 302-2 is determined. At this time, when the second layer thin film pattern 302-2 is arranged at a position overlapping the first layer stamp region 305-1, when the first layer thin film pattern 302-1 is transferred to the stamp portion 101, two layers are formed. The thin film pattern 302-2 of the eye is also transferred at the same time. For this reason, in order to reduce the plane area that occupies the donor substrate 108 as much as possible without overlapping the stamp area 305-1 of the first layer, the thin film pattern 302-2 of the second layer is changed to the stamp area 305 of the first layer. It arrange | positions so that -1 may be touched.

  The positional relationship between the second thin film pattern 302-2 and the first thin film pattern transfer region 306-1 after the transfer is as shown in FIG. 12A (b). A predetermined margin 104 for patterning error is added to the union of the planar regions occupied by the second thin film pattern 302-2 and the first thin film pattern 302-1 on the donor substrate at the time of transfer. A stamp area 305-2 is obtained.

  Next, as shown in FIG. 12A (c), the arrangement of the third-layer thin film pattern 302-3 is determined. At this time, it is a position that does not overlap the stamp area 305-1 of the first layer and the stamp area 305-2 of the second layer, that is, a position that does not overlap the union 307-2 of the stamp areas up to the second layer, As a position where the planar area occupying on the donor substrate 108 can be reduced, a position that touches the union 307-2 of the stamp areas up to the second layer as shown in FIG. 12A (c) at two points is selected.

  Next, as shown in FIG. 12B (d), the arrangement of the fourth thin film pattern 302-4 is determined. At this time, a position that does not overlap the first stamp area 305-1, the first stamp area 305-2, and the third stamp area 305-3, that is, the union of the stamp areas up to the third layer 307- The position inside the hole of the stamp region 305-2 of the second layer can be selected as a position that does not overlap 3 and can reduce the planar area occupied on the donor substrate 108.

  Next, as shown in FIG. 12B (e), the arrangement of the fifth thin film pattern 302-5 is determined. At this time, the stamp area 305-1 of the first layer, the stamp area 305-2 of the first layer, the position of the stamp area 305-3 of the third layer, and the position not overlapping the stamp area 305-4 of the fourth layer, that is, 4 As a position that does not overlap with the union 307-4 of the stamp area up to the layer and can reduce the planar area on the donor substrate 108, the inside of the hole of the stamp area 305-3 of the third layer Can be selected.

  FIG. 13 is a top view showing the arrangement of the thin film patterns finally determined.

(Effect of Example 2)
According to Example 2, even if each thin film pattern is a donor substrate 108 having holes, the area efficiency is obtained by utilizing the holes by designing the arrangement of the thin film patterns according to the algorithm according to the first embodiment. Can be improved.

  FIG. 14A is a top view of the microstructure manufactured in the third embodiment, and FIG. 14B is a direction in which the arrow indicates the cross section taken along the alternate long and short dash line AA ′ in FIG. It is the figure seen from.

  FIG. 15 is a top view showing the arrangement of the thin film patterns finally determined. The structural feature of the microstructure according to the third embodiment is that each thin film pattern has a shape with irregularities, and these arrangement designs have a shape in which the respective irregularities are intricate.

(Effect of Example 3)
According to Example 3, even if each thin film pattern is a donor substrate 108 having irregularities, the area efficiency can be improved by designing the arrangement of the thin film pattern according to the algorithm according to the first embodiment. .

  FIGS. 16A and 16B are a top view and a perspective view of the microstructure manufactured in the fourth embodiment.

  In FIG. 17, the top view showing arrangement | positioning of each thin film pattern finally determined is shown. In the microstructure according to the fourth embodiment, each thin film pattern has a different shape and has a complicated three-dimensional structure.

  In addition, when there are a plurality of thin film patterns in the same layer as in the fourth embodiment, a difference in height may occur between them depending on the manufacturing method. In such a case, there is a difference in height. By arranging the thin film patterns separately and sequentially laminating them from the lower thin film pattern, it is possible to laminate all the thin film patterns of the same layer without failure.

(Effect of Example 4)
According to Example 4, even in the case of a microstructure donor substrate 108 having a complicated three-dimensional structure, the area efficiency is improved by designing the arrangement of the thin film pattern according to the algorithm according to the first embodiment. I can make it.

  The arrangement of the thin film pattern according to each of the above embodiments is an example designed for the purpose of improving the area efficiency of the donor substrate 108, and is not limited thereto. Various modifications can be made without departing from the scope. For example, the thin film pattern can be arranged more efficiently in terms of area in consideration of the rotation of the donor substrate or the target substrate in the θ direction.

(A), (b) is the top view and sectional drawing of the microstructure which concern on the 1st Embodiment of this invention. (A)-(c) is a top view which shows the flow of the arrangement | positioning design of the thin film pattern which concerns on the 1st Embodiment of this invention. It is a flowchart of arrangement | positioning design of the thin film pattern which concerns on the 1st Embodiment of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on the 1st Embodiment of this invention. (A)-(d) is a side view which shows the manufacturing process of the microstructure based on the 1st Embodiment of this invention. (E)-(h) is a side view which shows the manufacturing process of the microstructure based on the 1st Embodiment of this invention. It is the top view and sectional drawing which show arrangement | positioning of each thin film pattern which concerns on the 2nd Embodiment of this invention. (A)-(d) is a side view which shows the manufacturing process of the microstructure based on the 2nd Embodiment of this invention. (E)-(f) is a side view which shows the manufacturing process of the microstructure based on the 2nd Embodiment of this invention. (A)-(c) is the top view and sectional drawing of the microstructure which concern on Example 1 of this invention. (A)-(d) is a top view which shows the flow of the arrangement | positioning design of the thin film pattern which concerns on Example 1 of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on Example 1 of this invention. (A), (b) is the top view and sectional drawing of the microstructure which concern on Example 2 of this invention. (A)-(c) is a top view which shows the flow of the arrangement | positioning design of the thin film pattern which concerns on Example 2 of this invention. (D)-(e) is a top view which shows the flow of the arrangement | positioning design of the thin film pattern which concerns on Example 2 of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on Example 2 of this invention. (A), (b) is the top view and sectional drawing of the microstructure which concern on Example 3 of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on Example 3 of this invention. (A), (b) is the top view and perspective view of the microstructure which concern on Example 4 of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on Example 4 of this invention. It is a top view which shows arrangement | positioning of each thin film pattern which concerns on the conventional manufacturing method.

Explanation of symbols

100 Target substrate 101 Stamp part 102-1, 202-1, 302-1, 402-1, 502-1, 602-1 First layer thin film pattern 102-2, 202-2, 302-2, 402-2 , 502-2, 602-2 Second layer thin film pattern 102-3, 202-3, 302-3, 402-3, 502-3, 602-3 Third layer thin film pattern 202-4, 302-4 402-4, 502-4 4th layer thin film pattern 302-5, 402-5, 502-5 5th layer thin film pattern 502-6 6th layer thin film pattern 103 Stamp portion transfer region 104 Margin 105-1 205-1, 305-1 1st layer stamp area 105-2, 205-2, 305-2 2nd layer stamp area 205-3, 305-3 3rd layer stamp area 305-4 4 First stamp region 106-1, 206-1, 306-1 First layer thin film pattern transfer region 206-2, 306-2 Second layer thin film pattern transfer region 306-3 Third layer thin film pattern transfer region 107 -2, 207-2, 307-2 The union of stamp areas up to the second layer 207-3, 307-3 The union of stamp areas up to the third layer 307-4 The union of stamp areas up to the fourth layer 407-5, 507-5 Sum set of stamp regions up to the fifth layer 108 Donor substrate 109 Release layer 112-1 Thin film pattern a
112-2 Thin film pattern b
115-1 First stamp area

Claims (6)

In the manufacturing method of a microstructure formed by laminating a plurality of thin film patterns,
A first step of designing the arrangement of the thin film pattern based on the shape, size, and stacking position of the plurality of thin film patterns;
A second step of forming the plurality of thin film patterns on a donor substrate based on the arrangement design;
A third step of disposing a target substrate opposite to the donor substrate, positioning, pressing and separating the donor substrate and the target substrate, and sequentially laminating the plurality of thin film patterns on the target substrate. ,
The arrangement design of the thin film pattern in the first step is as follows: the first thin film pattern when the first thin film pattern is transferred to the stamp portion of the target substrate and the planar area occupied on the donor substrate of the stamp portion The stamp area of the first thin film pattern is obtained by adding a predetermined margin for patterning error to the union of the above, and the n-1 thin film pattern is transferred to the n (n is a natural number of 2 or more) layer The n-th thin film pattern is obtained by adding a predetermined margin to a patterning error to the union of the planar regions on the donor substrate of the n-th thin film pattern and the n-1 thin film pattern When the stamp area is set, the thin film pattern of the nth layer is arranged so as to be in contact with the stamp area of the thin film pattern of the (n−1) th layer. Manufacturing method of structure. The predetermined margin includes an alignment microscope identification accuracy error, a pressure contact axis repetition accuracy error, a positioning accuracy error of a stage on which a target substrate or a donor substrate is installed, a patterning accuracy error such as photolithography, and a mechanical error such as photolithography. 2. The method for manufacturing a microstructure according to claim 1 , wherein the method is determined from an error parameter group including environmental errors caused by heat, vibration, and the like. In the first step, when there is a height difference between thin film patterns of the same layer, they are arranged separately,
2. The method for manufacturing a microstructure according to claim 1, wherein in the third step, the thin film patterns of the same layer are stacked in order from a thin film pattern having a low thickness. In a donor substrate having a plurality of thin film patterns on the substrate,
The donor substrate according to claim 1, wherein the plurality of thin film patterns are formed based on an arrangement design of the thin film pattern according to claim 1. Input means for inputting, as input information, the shape, size, and stacking position of a plurality of thin film patterns corresponding to the cross-sectional shape of the microstructure;
Based on the input information , a patterning error is added to the union of the thin film pattern of the first layer when the first thin film pattern is transferred to the stamp portion of the target substrate and the planar region occupying the donor substrate of the stamp portion. Is a stamp area of the first thin film pattern, and the nth layer when the n-1th thin film pattern is transferred to the n (n is a natural number of 2 or more) layer. When the stamp area of the nth thin film pattern is obtained by adding a predetermined margin for a patterning error to the union of the planar regions occupying the donor substrate of the thin film pattern and the n−1th thin film pattern, a processing means for performing layout design of the plurality of thin film patterns arranged so that an nth thin film pattern is in contact with a stamp area of the n−1th thin film pattern; A layout design apparatus comprising: A first step of receiving as input information the shape, size, and stacking position of a plurality of thin film patterns corresponding to the cross-sectional shape of the microstructure;
Based on the input information , a patterning error is added to the union of the thin film pattern of the first layer when the first thin film pattern is transferred to the stamp portion of the target substrate and the planar region occupying the donor substrate of the stamp portion. Is a stamp area of the first thin film pattern, and the nth layer when the n-1th thin film pattern is transferred to the n (n is a natural number of 2 or more) layer. When the stamp area of the nth thin film pattern is obtained by adding a predetermined margin for a patterning error to the union of the planar regions occupying the donor substrate of the thin film pattern and the n−1th thin film pattern, A second step of designing the arrangement of the plurality of thin film patterns is arranged such that the nth thin film pattern is in contact with the stamp area of the n−1th thin film pattern. A layout program that allows a computer to execute

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