JP4805565B2 - Heat treatment equipment - Google Patents

Description

  The present invention relates to a heat treatment apparatus including a heat treatment plate for placing and heat treating a substrate, and a method for detecting deposits on the heat treatment plate.

  In the photolithography process in the manufacture of semiconductor devices, for example, heat treatment (e.g., pre-baking) to evaporate the solvent in the resist film applied on the wafer, and heat treatment (post-exposure) to promote chemical reaction in the resist film after pattern exposure. A plurality of heat treatments such as baking and post-development heat treatment (post-baking) are performed.

  The heat treatment is usually performed by a heat treatment apparatus provided with a disk-shaped hot plate, and is performed by placing a wafer on a hot plate set at a predetermined temperature in advance. However, when there is an adhering material such as dust on the hot plate, for example, the wafer placed on the hot plate rides on the adhering material and is not heated uniformly within the wafer surface. If the wafer is not heated uniformly, for example, the line width of the pattern finally formed on the wafer varies within the wafer surface, and the yield decreases. For this reason, when a deposit adheres to the hot plate, it is necessary to detect the deposit.

  Conventionally, on both sides of the hot plate, a light emitting unit that emits almost horizontal light on the surface of the hot plate and a light receiving unit that receives light emitted from the light emitting unit are provided, and the light is blocked on the surface of the hot plate. The inclination of the wafer was detected by detecting this (for example, see Patent Document 1). As a result, it was possible to detect the adhesion of deposits on the hot plate, which causes the wafer to tilt.

  However, in the conventional case, it is necessary to install the light emitting unit and the light receiving unit at the same height as the hot plate surface on both sides of the hot plate. For example, the container of the hot plate is placed around the hot plate above the hot plate surface. When there are obstacles around the hot plate as in the case of covering up to, the light emitting part and the light receiving part could not be installed. Thus, the heat processing apparatus which can install a light emission part and a light-receiving part was limited. Also, if the light between the light-emitting unit and the light-receiving unit passes through the edge of the hot plate surface, false detection is likely to occur due to wafer shaking and distortion, so the optical path cannot be brought too close to the hot plate surface. Only the substrate tilt due to large deposits could be detected.

JP 2002-353292 A

  The present invention has been made in view of the above points, and can be applied to various apparatus configurations. The heat treatment apparatus can detect minute deposits on a heat treatment plate such as a hot plate, and the deposit on the heat treatment plate. The object is to provide a detection method.

The present invention for achieving the above object is a heat treatment apparatus including a heat treatment plate for placing and heat-treating a substrate, irradiating the laser beam on the surface of the substrate placed on the heat treatment plate, reflecting the laser beam, and reflecting the laser beam. A substrate tilt detection device that detects the tilt of the substrate on the heat treatment plate by detecting a light shift, and a partition plate that partitions the heat treatment region in which the heat treatment plate is disposed and the electrical region in which the electrical system is disposed. The substrate tilt detection apparatus irradiates the surface of the substrate with laser light immediately after the substrate is placed on the heat treatment plate and before the substrate is distorted or bent by receiving heat from the heat treatment plate. And a light receiving part for receiving reflected light reflected from the surface of the substrate, and two sheets for reflecting the laser light to three places on the surface of the substrate until the laser light reaches the light receiving part from the irradiation part And the irradiation unit The light receiving unit is disposed in the electrical area, and the first mirror of the two mirrors refracts the laser beam irradiated from the irradiation unit and reflected from the surface of the substrate by 60 degrees when viewed from the plane. The second mirror is configured to refract the laser beam reflected by the first mirror and reflected by the surface of the substrate by refracting 60 degrees when viewed from the plane. It is installed so that it may reflect toward.

According to the present invention, the laser beam is irradiated on the surface of the substrate on the heat treatment plate, reflected, and the deviation of the reflected light is detected, so that a slight tilt of the substrate can also be detected. Therefore, minute deposits on the heat treatment plate can be detected. In addition, since the laser beam is reflected on the surface of the substrate, the range in which the laser beam irradiation unit and the light receiving unit can be installed is widened compared to the conventional case, and can be applied to various heat treatment apparatuses. Furthermore, since the laser beam is reflected at three locations on the surface of the substrate, the tilt of the substrate can be reliably detected without leakage. In this case, since the laser beam is reflected on the surface of the substrate three times, for example, when the substrate is tilted, the deviation of the laser beam is increased every time it is reflected, and the slight tilt of the substrate is promoted for detection. can do. Therefore, minute deposits on the heat treatment plate can be detected.

The partition plate may be formed with a transparent window through which the laser beam passes.

  The substrate tilt detection device may include a light shielding plate in front of the light receiving portion, and the light shielding plate may be formed with a through hole that limits a laser beam incident on the light receiving portion. In such a case, the laser beam whose optical axis is shifted due to the tilt of the substrate can be shielded by the light shielding plate, and only the laser beam having no optical axis shift can be passed through the through hole. The laser beam that has passed through the through hole is received by the light receiving unit. Therefore, when the substrate is not tilted by the light shielding plate, the laser beam is received by the light receiving unit. When the substrate is tilted, the laser beam does not reach the light receiving unit. Easy to detect.

  The substrate tilt detection device has a laser device having both functions of the irradiation unit and the light receiving unit, and further receives laser light reflected from the laser device on the surface of the substrate via the mirror. You may make it have a reflecting plate which reflects in the same direction as a direction and returns to the said laser apparatus through the same optical path. In such a case, fine adjustment of the optical axis of the laser beam can be performed only by moving the mirror, so that the optical system of the laser beam can be easily adjusted.

  The substrate tilt detection device may include a light shielding plate in front of the reflection plate, and the light shielding plate may be formed with a through hole that limits a laser beam incident on the reflection plate. In such a case, the laser beam whose optical axis is shifted due to the tilt of the substrate can be shielded by the light shielding plate, and only the laser beam having no optical axis shift can be passed through the through hole. The laser beam that has passed through the through hole is reflected by the reflector and returned to the light receiving unit. Therefore, when the substrate is not tilted by the light shielding plate, the laser beam is received by the light receiving unit. When the substrate is tilted, the laser beam does not reach the light receiving unit. Easy to detect.

The reference example is a method of detecting deposits on a heat treatment plate that is subjected to heat treatment by placing the substrate, and the surface of the substrate placed on the heat treatment plate is irradiated and reflected, and the reflected light is reflected. The tilt of the substrate is detected by detecting the deviation.

According to the above reference example , the laser beam is irradiated on the surface of the substrate, reflected, and the deviation of the reflected light is detected, so that a slight tilt of the substrate can also be detected. Therefore, minute deposits on the heat treatment plate can be detected. Further, since the laser beam is reflected on the surface of the substrate, the range in which the laser beam irradiation unit and the light receiving unit can be installed is wider than in the past, and the present invention can be applied to heat treatment apparatuses having various configurations. The laser beam may be reflected at a plurality of locations on the surface of the substrate.

In the above reference example, immediately after the substrate is placed on the heat treatment plate, the tilt of the substrate may be detected by irradiating the surface of the substrate with the laser beam. The tilt of the substrate can be detected before the substrate is distorted or bent by receiving heat from the heat treatment plate. As a result, it is possible to accurately detect the tilt of the substrate due to the deposits on the heat treatment plate.

  According to the present invention, since minute deposits on the heat treatment plate can be detected, the yield can be improved by performing the heat treatment of the substrate only on the clean heat treatment plate.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view showing an outline of the configuration of a coating and developing treatment system 1 on which a heat treatment apparatus according to the present embodiment is mounted, FIG. 2 is a front view of the coating and developing treatment system 1, and FIG. FIG. 2 is a rear view of the coating and developing treatment system 1.

  As shown in FIG. 1, the coating and developing treatment system 1 is a cassette that carries, for example, 25 wafers W in and out of the coating and developing treatment system 1 from the outside in a cassette unit, and carries a wafer W in and out of the cassette C. A station 2, a processing station 3 in which a plurality of various processing apparatuses for performing a predetermined processing in a single wafer type in a photolithography process are arranged in multiple stages, and an exposure (not shown) provided adjacent to the processing station 3 The interface unit 4 that transfers the wafer W to and from the apparatus is integrally connected.

  In the cassette station 2, a plurality of cassettes C can be placed in a row in a predetermined position on the cassette placement table 5 in the X direction (vertical direction in FIG. 1). The cassette station 2 is provided with a wafer transfer body 7 that can move in the X direction on the transfer path 6. The wafer carrier 7 is also movable in the wafer arrangement direction (Z direction; vertical direction) of the wafers W accommodated in the cassette C, and is selective to the wafers W in each cassette C arranged in the X direction. Can be accessed.

  The wafer carrier 7 has an alignment function for aligning the wafer W. As will be described later, the wafer transfer body 7 can also access the extension device 32 belonging to the third processing unit group G3 on the processing station 3 side to transfer the wafer W.

  In the processing station 3, a main transfer device 13 is provided at the center, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In the coating and developing treatment system 1, four processing device groups G 1, G 2, G 3 and G 4 are arranged, and the first and second processing device groups G 1 and G 2 are arranged on the front side of the coating and developing treatment system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed adjacent to the interface unit 4. Further, as an option, a fifth processing unit group G5 indicated by a broken line can be separately arranged on the back side. The main transfer device 13 can transfer the wafer W to various processing devices (described later) arranged in these processing device groups G1 to G5.

  In the first processing unit group G1, for example, as shown in FIG. 2, a resist coating unit 17 for applying a resist solution to the wafer W and a development processing unit 18 for developing the exposed wafer W are arranged in order from the bottom. It is arranged on the stage. Similarly, in the second processing unit group G2, the resist coating unit 19 and the development processing unit 20 are stacked in two stages in order from the bottom.

  In the third processing unit group G3, for example, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, an adhesion device 31 for improving the fixability between the resist solution and the wafer W, and an extension for waiting the wafer W The apparatus 32, pre-baking apparatuses 33 and 34 for drying the solvent in the resist solution, and post-baking apparatuses 35 and 36 for performing the heat treatment after the development process are stacked in, for example, seven stages from the bottom.

  In the fourth processing unit group G4, for example, a cooling unit 40, an extension / cooling unit 41 for naturally cooling the mounted wafer W, an extension unit 42, a cooling unit 43, and post-exposure baking as a thermal processing unit according to the present embodiment. Devices (hereinafter referred to as “PEB devices”) 44 and 45, post-baking devices 46 and 47, and the like are stacked in, for example, eight stages from the bottom.

  As shown in FIG. 1, a wafer carrier 50 is provided at the center of the interface unit 4. The wafer carrier 50 is configured to be freely movable in the X and Z directions and rotated in the θ direction (rotating direction around the Z axis), and the extension carrier belonging to the fourth processing unit group G4. The wafer W can be transferred by accessing the cooling device 41, the extension device 42, the peripheral exposure device 51, and an exposure device (not shown).

  Next, the configuration of the PEB device 44 described above will be described. As shown in FIG. 4, for example, the PEB device 44 has a case 44 a that covers the whole, and in the case 44 a, a lid body 60 that is located on the upper side and is movable up and down, and a lid body that is located on the lower side. 60 and a hot plate accommodating portion 61 that forms a processing chamber S together with the heat treatment chamber 60.

  The lid 60 has, for example, a substantially cylindrical shape whose upper surface is closed, and can be moved up and down by an elevating drive unit (not shown).

  The hot plate accommodating portion 61 has, for example, a substantially cylindrical shape in which the lower surface is closed and the upper surface is opened. The hot plate accommodating portion 61 accommodates a hot plate 63 as a heat treatment plate for placing and heating the wafer W. The hot plate 63 has, for example, a thick substantially disk shape. The heating plate 63 incorporates a heater 64 that generates heat when power is supplied, and the heating of the heater 64 can heat the wafer W on the heating plate 63 to a predetermined temperature.

  Near the center of the hot plate 63, a plurality of through-holes 70 are formed through the hot plate 63 and the bottom of the hot plate housing 61 in the vertical direction. In each through-hole 70, raising / lowering pins 71 for supporting the wafer W and raising / lowering it are arranged. The elevating pins 71 are moved up and down by an elevating drive unit (not shown) such as a cylinder and protrude on the hot plate 63 so that the wafer W can be moved up and down.

  For example, a partition plate 82 is provided in the case 44a to partition a heat treatment region 80 in which the hot plate 63 and the hot plate accommodating portion 61 are arranged, and an electrical component region 81 in which an electric system and the like are installed. As the material of the partition plate 82, a heat insulating material is used so that heat on the heat treatment region 80 side is not transmitted to the electrical component region 81 side. In the electrical area 81, for example, the above-described lifting drive unit of the lid body 60, the lifting drive unit of the lifting pins 71, wiring connected to the heater 64, and the like are accommodated.

  For example, as shown in FIG. 5, the PEB device 44 is provided with a substrate tilt detection device 90 that detects the tilt of the wafer W placed on the hot plate 63. The substrate tilt detection device 90 includes, for example, a laser device 91, a first mirror 92, a second mirror 93, a light shielding plate 94, and a reflection plate 95.

The laser device 91 is, for example, a regression laser sensor, and has a function as an irradiation unit that irradiates laser light and a function as a light receiving unit that receives reflected and returned laser light. The laser device 91 is disposed, for example, in the vicinity of the central portion in the electrical area 81, and the partition plate 82 is formed with a transparent window 96 through which laser light passes. As shown in FIG. 4, the laser device 91 is directed to irradiate laser light obliquely onto the wafer W on the hot plate 63 through the window 96 .

  As shown in FIG. 5, a first mirror 92, a second mirror 93, and a reflecting plate 95 are arranged around the hot plate accommodating portion 61 in the heat treatment region 80. The first mirror 92, the second mirror 93, and the reflecting plate 95 are arranged at equal intervals of about 120 ° on the same circumference with the center of the heat plate 63 as the center. For example, the laser device 91 is disposed at a position close to the center axis J in the Y direction passing through the center of the hot plate 63 when viewed from the plane. For example, the first mirror 92 and the second mirror 93 have their center axes. Both sides of J are arranged at positions symmetrical with respect to the central axis J. For example, the reflecting plate 95 is disposed in the vicinity of the central axis J on the laser device 91 side.

  The first mirror 92 refracts the laser beam irradiated from the laser device 91 and reflected by the surface of the wafer W (point P1 in FIG. 5) by about 60 ° when viewed from the plane, and thereby the surface of the wafer W (in FIG. 5). It is installed so as to reflect toward the point P2). The second mirror 93 refracts the laser beam reflected by the first mirror 92 and reflected by the surface of the wafer W (point P2 in FIG. 5) by about 60 ° when viewed from the plane, and thereby the surface of the wafer W (FIG. 5 so as to reflect toward the point P3). Further, the reflection plate 95 is arranged so that the laser beam reflected by the second mirror 93 and reflected by the surface of the wafer W (point P3 in FIG. 5) is incident.

  As the reflection plate 95, one that reflects incident laser light in the same direction as the incident direction is used. By this reflection plate 95, the laser light that has reached the reflection plate 95 from the laser device 91 via the first mirror 92 and the second mirror 93 follows the same optical path and is returned to the laser device 91.

  Immediately before the reflection plate 95, a light shielding plate 94 that shields laser light whose optical axis is shifted is provided. A through hole 97 having a diameter of about 1 mm is formed in the light shielding plate 94 as shown in FIGS. The light shielding plate 94 shields the laser light whose optical axis is shifted from the laser light reflected on the surface of the wafer W via the second mirror 93 and allows only the laser light passing through an appropriate position to pass. . Thereby, when the wafer W is tilted and the optical axis of the laser beam is shifted, the laser beam is not reflected by the reflecting plate 95 and is not received by the laser device 91. Further, when the wafer W is placed horizontally, the laser light passes through the through hole 97, is reflected by the reflecting plate 95, and is received by the laser device 91.

  Information on whether or not the laser beam is received by the laser device 91 can be output to the device control unit 100 as shown in FIG. 5, for example. The apparatus control unit 100 can determine whether or not the wafer W is tilted based on information from the laser apparatus 91, and can detect the presence or absence of deposits on the hot plate 63. That is, the apparatus control unit 100 determines that there is an inclination of the wafer W when there is no laser beam reception, and that there is an adhering substance on the hot plate 63. It is determined that there is no deposit on the hot plate 63.

  A transfer port 110 for carrying the wafer W in and out of the apparatus is formed on the side surface of the case 44a on the positive side in the Y direction. The transfer port 110 is provided with a shutter 111, which can be opened and closed when the wafer W is loaded and unloaded.

  In the photolithography process performed in the coating and developing treatment system 1 configured as described above, first, unprocessed wafers W are sequentially taken out one by one from the cassette C by the wafer carrier 7, and the third processing unit group G3. To the adhesion device 31 belonging to Each wafer W is coated with an adhesion enhancing agent such as HMDS that improves the adhesion with the resist solution in the adhesion device 31, and is transferred to the cooling device 30 by the main transfer device 13 and cooled to a predetermined temperature. Thereafter, the wafer W is sequentially transferred to the resist coating unit 17 and the pre-baking unit 34 and subjected to a predetermined process. Thereafter, the wafer W is transferred to the extension / cooling device 41 by the main transfer device 13, and transferred to the exposure device (not shown) through the peripheral exposure device 51 by the wafer transfer body 50. The wafer W after the exposure processing is transferred to the extension device 42 by the wafer transfer body 50 and transferred to the PEB device 44. In the PEB apparatus 44, the wafer W that has been subjected to the heat treatment is sequentially transferred to the cooling device 43, the development processing device 18, the post-baking device 35, and the cooling device 30 by the main transfer device 13, and is subjected to predetermined processing in each device. The Thereafter, the wafer W is returned to the cassette C by the wafer carrier 7 via the extension device 32, and a series of coating and developing processes is completed.

  Next, the detection process of the deposit | attachment on the hot plate 63 in the above-mentioned PEB apparatus 44 is demonstrated.

  For example, the detection of deposits on the hot plate 63 is performed each time the wafer W is carried into the PEB device 44 and placed on the hot plate 63 in the series of wafer processes described above. First, in a state where the lid 60 is raised and the processing chamber S is opened, the wafer W is transferred to the upper side of the hot plate 63 by the main transfer device 13, and the wafer W is transferred to the lift pins 71. Then, immediately after the wafer W is placed on the hot plate 63 by the elevating pins 71, laser light is irradiated from the laser device 91 toward the surface of the wafer W as shown in FIG. When the wafer W is placed horizontally on the hot plate 63, the laser light emitted from the laser device 91 is reflected multiple times at a plurality of locations on the surface of the wafer W as shown in FIG. However, it reciprocates with the reflecting plate 95 and is received by the laser device 91. That is, after the laser beam is output from the laser device 91, the surface of the wafer W (point P1 in FIG. 5), the first mirror 92, the surface of the wafer W (point P2 in FIG. 5), the second The light is sequentially reflected on the mirror 93 and the surface of the wafer W (point P3 in FIG. 5), passes through the through hole 97 of the light shielding plate 94, and enters the reflection plate 95. The laser beam reflected by the reflecting plate 95 returns to the laser device 91 through the same optical path and is received. When the laser beam is received by the laser device 91, the information is output to the device control unit 100, and the device control unit 100 determines that there is no inclination of the wafer W and there is no deposit on the hot plate 63.

  On the other hand, when the wafer is not placed horizontally on the hot plate 63, the laser beam output from the laser device 91 is shifted in its optical axis when reflected by the surface of the wafer W, as shown in FIG. Thus, the light cannot pass through the through hole 97 of the light shielding plate 94 and is blocked by the light shielding plate 94. As a result, the laser beam is not returned to the laser device 91 and is not received. If the laser beam is not received by the laser device 91, the information is output to the device control unit 100, and the device control unit 100 determines that the wafer W is inclined and there is an adhering substance on the hot plate 63. For example, when it is determined that there is a deposit on the hot plate 63, an alarm is output from the apparatus control unit 100, for example, and the operation of the coating and developing treatment system 1 is temporarily stopped, for example. If it is determined that there is no deposit on the hot plate 63, the lid body 60 is lowered and bonded to the hot plate container 61 to form the processing chamber S, and the wafer W is heated by the hot plate 63. The

  According to the above embodiment, since the laser light is reflected on the surface of the wafer W, a wide installation location of the substrate tilt detection device 90 such as the laser device 91 can be secured. Accordingly, the substrate tilt detection device 90 is not limited to the PEB device 44 having a specific device configuration, and can be mounted on the PEB device 44 having various device configurations. Further, since the laser beam is actually reflected on the surface of the wafer W, even a slight inclination of the wafer W can be detected, and minute deposits on the hot plate 63 can be detected.

  Since the mirrors 92 and 93 are provided around the hot plate 63 so that the laser beam is reflected at a plurality of locations on the surface of the wafer W, for example, when the wafer W is tilted, the light is reflected each time the laser beam is reflected. The axis deviation is amplified, and the tilt of the wafer W is promoted. As a result, a slight tilt of the wafer W can be detected, and smaller deposits on the hot plate 63 can be detected.

  Furthermore, since the laser beam is reflected by the reflecting plate 95 and reciprocated, the optical path of the laser beam can be lengthened within a narrow apparatus. This also amplifies the deviation of the optical axis of the laser beam, so that even a slight tilt of the wafer W can be detected and minute deposits can be detected.

  Since the light shielding plate 94 is provided in front of the reflecting plate 95 so as to shield the laser light whose optical axis is shifted, the laser light is not received by the laser device 91 when the wafer W is tilted, and the wafer W When is horizontal, the laser beam is received by the laser device 91. As described above, the presence or absence of the tilt of the wafer W can be detected relatively easily by the presence or absence of the laser beam. Further, since the threshold value of the inclination of the wafer W can be easily changed by simply changing the diameter of the through hole 97, it can be applied to a heat treatment apparatus of any specification. The plurality of light shielding plates 95 having through-holes 97 having different diameters may be replaced with respect to the optical path of the laser light, and the light shielding plates 95 may be replaced by, for example, a threshold value of the inclination of the wafer W. Further, the installation position of the light shielding plate 95 is not limited to just before the reflecting plate 95, and may be in front of the laser device 91.

  In addition, since the laser device 91 is disposed in the electrical equipment region 81, the heat-sensitive laser device 91 can be used in the PEB device 44 during the heat treatment.

  In the above embodiment, the regression laser device 91 having both irradiation and light reception functions is used. However, a laser device 91 having an irradiation unit and a light reception unit may be used. For example, as shown in FIG. 9, the irradiation unit 121 and the light receiving unit 122 of the laser device 120 are arranged in the electrical region 81, reflected by the second mirror 93, and reflected by the surface of the wafer W (point P3 shown in FIG. 9). The received laser beam may be received by the light receiving unit 122 instead of the reflection plate 95 of the above embodiment. In this case, a light shielding plate 94 is provided immediately before the light receiving unit 122, and information on whether or not the laser light is received by the light receiving unit 122 can be output to the device control unit 100. Other configurations are the same as those of the above-described embodiment, and the description thereof is omitted. In this example, the laser beam output from the irradiation unit 121 is received by the light receiving unit 122 via the first mirror 92 and the second mirror 93 while being reflected at a plurality of locations on the surface of the wafer W. When the optical axis of the laser beam is deviated, the laser beam is shielded by the light shielding plate 94 immediately before the light receiving unit 122. Also in this example, since the laser light is reflected at a plurality of locations on the surface of the wafer W, when the wafer W is inclined, the deviation of the laser light is amplified and the inclination of the wafer W is promoted. Therefore, minute deposits on the hot plate 63 can be detected.

  In the above embodiment, the mirrors 92 and 93 are provided at two locations, and the laser beam is reflected at three locations on the surface of the wafer W until the laser beam reaches the reflector 94 from the laser device 91. The number may be two or four or more, and the mirrors may be installed as appropriate according to the number.

  The example of the embodiment of the present invention has been described above, but the present invention is not limited to this example and can take various forms. For example, in the present embodiment, the adhering matter on the hot plate 63 of the PEB apparatus 44 is detected. However, other heat treatment apparatuses having a hot plate such as a pre-baking apparatus and a post-baking apparatus, and a wafer W are used. The present invention can also be applied to a cooling processing apparatus including a cooling plate that is mounted and cooled. Furthermore, the present invention can also be applied to a heat treatment apparatus for other substrates other than a wafer, such as an FPD (flat panel display) and a mask reticle for a photomask.

  The present invention is useful when detecting minute deposits on a heat-treated plate.

It is a top view which shows the outline of a structure of the coating and developing treatment system in this Embodiment. FIG. 2 is a front view of the coating and developing treatment system of FIG. 1. FIG. 2 is a rear view of the coating and developing treatment system of FIG. 1. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a PEB apparatus. It is explanatory drawing of the cross section which shows the outline of a structure of a PEB apparatus. It is a perspective view of a light-shielding plate and a reflecting plate. It is explanatory drawing which shows a mode that a laser beam passes a light shielding plate and injects into a reflecting plate. It is explanatory drawing which shows a mode that the optical axis of a laser beam shifts | deviates and a laser beam is light-shielded with a light-shielding plate. It is explanatory drawing of the cross section which shows the PEB apparatus provided with the laser apparatus which has an irradiation part and a light-receiving part separately.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coating / development processing system 44 PEB apparatus 63 Hot plate 90 Substrate inclination detection apparatus 91 Laser apparatus 92 1st mirror 93 2nd mirror 94 Light-shielding plate 95 Reflecting plate 97 Through-hole W Wafer

Claims (5)

A heat treatment apparatus having a heat treatment plate for placing and heat treating a substrate,
A substrate tilt detection device that detects the tilt of the substrate on the heat treatment plate by irradiating the laser beam on the surface of the substrate mounted on the heat treatment plate, reflecting the laser beam, and detecting the deviation of the reflected light;
A partition plate that partitions a heat treatment region in which the heat treatment plate is disposed and an electrical component region in which the electrical system is disposed;
The substrate tilt detection apparatus includes an irradiation unit that irradiates the surface of the substrate with laser light immediately after the substrate is placed on the heat treatment plate and before the substrate is distorted or bent by receiving heat from the heat treatment plate. , A light receiving portion for receiving reflected light reflected from the surface of the substrate, and two mirrors for reflecting the laser light to three locations on the surface of the substrate until the laser light reaches the light receiving portion from the irradiation portion And
The irradiation unit and the light receiving unit are disposed in the electrical area.
Of the two mirrors, the first mirror is installed so that the laser beam irradiated from the irradiation unit and reflected from the surface of the substrate is refracted by 60 degrees when viewed from the plane and reflected toward the surface of the substrate. The second mirror is installed so that the laser beam reflected by the first mirror and reflected by the surface of the substrate is refracted by 60 degrees when viewed from the plane and reflected toward the surface of the substrate. Characteristic heat treatment equipment. The heat treatment apparatus according to claim 1, wherein the partition plate is formed with a transparent window through which the laser beam passes. The substrate tilt detection device has a light shielding plate in front of the light receiving unit,
3. The heat treatment apparatus according to claim 1, wherein the light shielding plate is formed with a through hole for limiting a laser beam incident on the light receiving portion. 4. The substrate tilt detection device has a laser device having both functions of the irradiation unit and the light receiving unit, and further receives laser light reflected from the laser device on the surface of the substrate via the mirror. The heat treatment apparatus according to claim 1, further comprising a reflection plate that is reflected in the same direction as the direction and returns to the laser apparatus through the same optical path. The substrate inclination detecting device has a light shielding plate in front of the reflecting plate,
The heat treatment apparatus according to claim 4, wherein the light shielding plate is formed with a through hole that limits a laser beam incident on the reflection plate.

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