JP4807283B2 - Semiconductor measuring equipment - Google Patents

Description

  The present invention relates to a semiconductor measuring apparatus and a semiconductor measuring method for measuring high-frequency characteristics of a semiconductor package on which a high-frequency device is mounted, and more particularly to a semiconductor measuring apparatus and a semiconductor measuring method capable of measuring high-frequency characteristics with high accuracy. is there.

  A semiconductor package on which a high-frequency device is mounted is used for communication equipment, in-vehicle equipment, and the like. A semiconductor measuring device is used to measure the high-frequency characteristics (input / output characteristics, noise characteristics, S-parameters) of this semiconductor package (see, for example, Patent Document 1).

  FIG. 12 is a cross-sectional view showing a conventional semiconductor measurement apparatus. On the carrier 11, a measurement substrate 13 for measuring the high frequency characteristics of the semiconductor package 12 is provided. A contact pad 14 is provided on the measurement substrate 13. The contact pad 14 is connected to a connector 15 for inputting / outputting signals from / to the outside. The periphery of the carrier 11 and the measurement substrate 13 is surrounded by a side plate 16, and the upper side of the measurement substrate 13 is covered with an apparatus body 17. A pressing part 18 made of a dielectric is provided on the lower surface of the apparatus main body 17. The measurement is performed in a state in which the semiconductor package 12 is pressed against the measurement substrate 13 by the pressing portion 18 and the back electrode of the semiconductor package 12 and the contact pad 14 on the measurement substrate 13 are in electrical contact.

JP 2001-99887 A

  FIG. 13 is a diagram showing the measurement results of the S parameter when measured using a conventional semiconductor measurement device and when measured by solder mounting a semiconductor package on the same measurement substrate. The measurement end face is the outer end of the drain / gate back electrode of the semiconductor package. In addition, TRL calibration (Through-Reflection-Line) is performed using a calibration standard by a microstrip line formed on the substrate to correct the measured value of the S parameter.

  When measured using a conventional semiconductor measurement apparatus, the waveform of the S parameter changes discontinuously everywhere, and a reflection gain occurs in the high frequency region. On the other hand, when measured by solder mounting, these tendencies are not seen at all.

  A factor causing this difference in characteristics is a change in impedance around the semiconductor package due to the structure of the semiconductor measuring device. That is, in the conventional semiconductor measuring apparatus, the microstrip line is surrounded by structures such as the apparatus main body and the holding part, and the influence of these structures affects the electric field distribution around the semiconductor package, and the S parameter measurement is performed. It is a disturbing factor. The same effect also works for measurement of other high frequency characteristics (input / output, noise). Therefore, there is a problem that the high frequency characteristics of the semiconductor package cannot be measured with high accuracy.

  Conventionally, TRL calibration is performed using a calibration standard that is in an open state in which no object covering the microstrip line exists. On the other hand, in the actual measurement, the microstrip line is surrounded by structures such as the apparatus main body and the holding part. As a result, changes occur in the characteristic impedance of the microstrip line on the semiconductor measuring device and the isolation between the input and output ports. As described above, since the calibration conditions and the measurement conditions are different in the S parameter measurement of the semiconductor package, there is a problem in that the high frequency characteristics cannot be measured with high accuracy.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor measuring apparatus and a semiconductor measuring method capable of measuring high-frequency characteristics with high accuracy.

Semiconductor measuring device according to the present invention, a measurement board for measuring the frequency characteristics of the semiconductor package, and a pressing portion for pressing the semiconductor package to the measuring substrate, pressing part, have a recess of cross-section trapezoidal tip portion Then, the inclined inner wall of the recess comes into contact with the four sides of the upper surface of the semiconductor package . Other features of the present invention will become apparent below.

  According to the present invention, high-frequency characteristics can be measured with high accuracy.

Embodiment 1 FIG.
FIG. 1 is a sectional view showing a semiconductor measuring apparatus according to Embodiment 1 of the present invention. On the carrier 11, a measurement substrate 13 for measuring high frequency characteristics of a semiconductor package 12 on which a high frequency device (not shown) is mounted is provided. A contact pad 14 is provided on the measurement substrate 13. The contact pad 14 is connected to a connector 15 for inputting / outputting signals from / to the outside. The periphery of the carrier 11 and the measurement substrate 13 is surrounded by a side plate 16, and the upper side of the measurement substrate 13 is covered with an apparatus body 17. A resin pressing portion 18 is provided on the lower surface of the apparatus main body 17. The measurement is performed in a state in which the semiconductor package 12 is pressed against the measurement substrate 13 by the pressing portion 18 and the back electrode of the semiconductor package 12 and the contact pad 14 on the measurement substrate 13 are in electrical contact.

  The holding part 18 has a hollow part 19 in the center part of the tip part in contact with the semiconductor package 12. Thereby, the dielectric constant of the front-end | tip of the holding | suppressing part 18 reduces. Therefore, since the change in the dielectric constant of the upper part of the semiconductor package due to the structure of the semiconductor measuring device can be reduced, high-frequency characteristics can be measured with high accuracy.

Embodiment 2. FIG.
FIG. 2 is a cross-sectional view showing a semiconductor measurement apparatus according to Embodiment 2 of the present invention. A description of the same configuration as that of the first embodiment will be omitted, and only differences will be described.

  The holding part 18 has a cylindrical or rectangular parallelepiped cavity 19 inside the vicinity of the tip that contacts the semiconductor package 12. Thereby, the dielectric constant of the front-end | tip of the holding | suppressing part 18 reduces. Therefore, since the change in the dielectric constant of the upper part of the semiconductor package due to the structure of the semiconductor measuring device can be reduced, high-frequency characteristics can be measured with high accuracy.

  Further, the tip of the pressing portion 18 has a planar shape parallel to the upper surface of the semiconductor package 12. As a result, the contact between the tip of the pressing portion 18 and the semiconductor package 12 is improved, and the semiconductor package 12 can be reliably pressed.

Embodiment 3 FIG.
FIG. 3 is a sectional view showing a semiconductor measuring apparatus according to Embodiment 3 of the present invention, and FIG. 4 is a top view thereof. On the carrier 11, a measurement substrate 13 for measuring the high frequency characteristics of the semiconductor package 12 is provided. A contact pad 14 is provided on the measurement substrate 13. The measurement is performed in a state in which the semiconductor package 12 is pressed against the measurement substrate 13 by the pressing portion 18 and the back electrode of the semiconductor package 12 and the contact pad 14 on the measurement substrate 13 are in electrical contact.

  The pressing portion 18 has a trapezoidal concave portion 20 at the tip portion. Four sides of the inner wall of the recess 20 and the upper surface of the semiconductor package 12 are in contact with each other. As a result, the portion where the semiconductor package 12 and the pressing portion 18 approach is significantly reduced as compared with the first and second embodiments. Therefore, since the change in the dielectric constant of the upper part of the semiconductor package due to the structure of the semiconductor measuring device can be reduced, high-frequency characteristics can be measured with high accuracy.

  Further, since the pressing position of the semiconductor package 12 by the pressing portion 18 is fixed, the position of the back surface electrode of the semiconductor package 12 is fixed to the contact pad 14 of the measurement substrate 13. Thereby, a stable measurement result can be obtained even if the operator does not adjust the positioning of the semiconductor package in advance.

Embodiment 4 FIG.
FIG. 5 is a cross-sectional view showing a semiconductor measurement apparatus according to Embodiment 4 of the present invention. A description of the same configuration as that of the first embodiment will be omitted, and only differences will be described.

  The apparatus main body 17 is grounded. The pressing portion 18 electrically connected to the apparatus main body 17 is made of metal. Moreover, the length of the holding | suppressing part 18 is 1/4 of the wavelength of a measurement frequency. Thereby, the upper part of the semiconductor package is electrically opened, and a state in which there is no influence of the semiconductor measuring device in the measurement of the high frequency characteristics is realized. Therefore, since the measurement can be performed under the same conditions as the calibration conditions before the measurement, the high-frequency characteristics can be measured with high accuracy.

Embodiment 5 FIG.
FIG. 6 is a sectional view showing a semiconductor measuring apparatus according to the fifth embodiment of the present invention. On the carrier 11, a measurement substrate 13 for measuring the high frequency characteristics of the semiconductor package 12 is provided. A contact pad 14 and a vacuum suction hole 21 are provided on the measurement substrate 13. The measurement is performed in a state where the semiconductor package 12 is vacuum-sucked to the measurement substrate 13 by the vacuum suction hole 21 and the back electrode of the semiconductor package 12 and the contact pad 14 on the measurement substrate 13 are in electrical contact.

  Since a portion of the dielectric material of the measurement substrate 13 is missing at the vacuum suction hole 21, the dielectric constant immediately below the semiconductor package 12 is reduced, and there is a concern about the influence on the measurement result of the high frequency characteristics. Therefore, a high dielectric constant material 22 having a dielectric constant higher than that of the measurement substrate 13 is provided inside the vacuum suction hole 21. Thereby, the dielectric constant change by the vacuum suction hole 21 can be compensated. Therefore, since the change in the dielectric constant of the upper part of the semiconductor package due to the structure of the semiconductor measuring device can be reduced, high-frequency characteristics can be measured with high accuracy.

Embodiment 6 FIG.
FIG. 7 is a sectional view showing a semiconductor measuring apparatus according to the sixth embodiment of the present invention. A description of the same configuration as that of the fifth embodiment will be omitted, and only the difference will be described.

  The plurality of semiconductor packages 12 are continuously supported by the tape 23. However, the material, width, and thickness of the tape 23 are selected so that adjacent semiconductor packages 12 do not interfere electrically. Thereby, the measurement of a high frequency characteristic can be continuously implemented about a some semiconductor package.

Embodiment 7 FIG.
FIG. 8 is a sectional view showing a calibration apparatus according to Embodiment 7 of the present invention. A calibration reference 24 is provided on the measurement substrate 13 instead of the contact pad 14, and a structure 25 having the same size is used instead of the semiconductor package 12. Other configurations are the same as those of the semiconductor measuring apparatus according to the first embodiment.

  FIG. 9 is a schematic diagram showing a calibration standard for S parameter measurement using a microstrip line. A through standard T, a reflect standard R, and a line standard L are used as calibration standards.

  In the seventh embodiment, after the TRL calibration is performed using the calibration device described above, the S parameter of the semiconductor package is measured using the semiconductor measurement device according to the first embodiment. That is, a calibration device in which a calibration standard is built in the same structure as the semiconductor measurement device is used. As a result, the calibration condition and the measurement condition can be brought close to each other, so that the S parameter can be measured with high accuracy.

  In the above example, the case where the semiconductor measuring apparatus according to the first embodiment is used has been described. However, the present invention is not limited to this, and the semiconductor measuring apparatus according to the second to fourth embodiments may be used. However, it is necessary to use a calibration device in which a calibration standard is built in the same structure as the semiconductor measurement device.

  Conventionally, isolation between input and output ports has been ignored during calibration. However, since the calibration component of the semiconductor measuring device is close to the input / output port, it is considered that the isolation between the input / output ports is affected. Therefore, further improvement in measurement accuracy is expected by performing calibration for the isolation between the input and output ports.

Embodiment 8 FIG.
FIG. 10 is a sectional view showing a semiconductor measuring apparatus according to the eighth embodiment of the present invention. On the carrier 11, a measurement substrate 13 for measuring the high frequency characteristics of the semiconductor package 12 is provided. A contact pad 14 is provided on the measurement substrate 13. The contact pad 14 is connected to a connector 15 for inputting / outputting signals from / to the outside. The periphery of the carrier 11 and the measurement substrate 13 is surrounded by a side plate 16. A resin positioning guide 26 having an opening at a position where the semiconductor package 12 is disposed is provided on the measurement substrate 13. A resin holding portion 18 is provided so as to fit into the opening. The measurement is performed in a state in which the semiconductor package 12 is pressed against the measurement substrate 13 by the pressing portion 18 and the back electrode of the semiconductor package 12 and the contact pad 14 on the measurement substrate 13 are in electrical contact.

  In the eighth embodiment, as in the seventh embodiment, a calibration device in which a calibration reference is built in the same structure as the semiconductor measurement device is used. As a result, the calibration condition and the measurement condition can be brought close to each other as in the seventh embodiment, so that the S parameter can be measured with high accuracy.

Embodiment 9 FIG.
FIG. 11 is a sectional view showing a semiconductor measuring apparatus according to the ninth embodiment of the present invention. A resin positioning guide 26 having an opening at a position where the semiconductor package 12 is disposed is provided on the measurement substrate 13. Other configurations are the same as those of the fifth embodiment.

  In the ninth embodiment, as in the seventh embodiment, a calibration device in which a calibration reference is built in the same structure as the semiconductor measurement device is used. As a result, the calibration condition and the measurement condition can be brought close to each other as in the seventh embodiment, so that the S parameter can be measured with high accuracy.

It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 2 of this invention. It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 3 of this invention. It is a top view which shows the semiconductor measuring apparatus which concerns on Embodiment 3 of this invention. It is sectional drawing which shows the semiconductor measuring apparatus which concerns on Embodiment 4 of this invention. It is sectional drawing which shows the semiconductor measuring apparatus which concerns on Embodiment 5 of this invention. It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 6 of this invention. It is sectional drawing which shows the calibration apparatus which concerns on Embodiment 7 of this invention. It is a schematic diagram which shows the calibration reference | standard for S parameter measurement using a microstrip line. It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 8 of this invention. It is sectional drawing which shows the semiconductor measuring device which concerns on Embodiment 9 of this invention. It is sectional drawing which shows the conventional semiconductor measuring apparatus. It is a figure which shows the measurement result of the S parameter at the time of measuring using the conventional semiconductor measuring device, and when measuring by solder-mounting a semiconductor package on the same measurement board | substrate.

Explanation of symbols

12 Semiconductor Package 13 Measurement Substrate 17 Device Main Body 18 Holding Part 19 Cavity 20 Recess 21 Vacuum Suction Hole 22 High Permittivity Material 23 Tape 24 Calibration Standard

Claims (2)

A measurement board for measuring high-frequency characteristics of a semiconductor package;
A pressing portion that presses the semiconductor package against the measurement substrate;
The holding part has a recess having a trapezoidal cross section at the tip, and the inclined inner wall of the recess and the four sides of the upper surface of the semiconductor package are in contact with each other .   The semiconductor measuring apparatus according to claim 1, wherein the pressing portion contacts only four sides of the upper surface of the semiconductor package.

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