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JP4812573B2 - Conductor film connection structure and manufacturing method thereof - Google Patents
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JP4812573B2 - Conductor film connection structure and manufacturing method thereof - Google Patents

Conductor film connection structure and manufacturing method thereof Download PDF

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JP4812573B2
JP4812573B2 JP2006249169A JP2006249169A JP4812573B2 JP 4812573 B2 JP4812573 B2 JP 4812573B2 JP 2006249169 A JP2006249169 A JP 2006249169A JP 2006249169 A JP2006249169 A JP 2006249169A JP 4812573 B2 JP4812573 B2 JP 4812573B2
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conductor film
film
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connection structure
electrode
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健一 永山
達矢 吉澤
豊 斎藤
一弘 竹田
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Tohoku Pioneer Corp
Pioneer Corp
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Description

本発明は、表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との導電体膜接続構造及びその作製方法に関する。   The present invention relates to a conductor film connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel, and a method for manufacturing the conductor film connection structure.

導電体膜接続技術は、近年の有機エレクトロルミネッセンス表示パネル(以下、有機EL表示パネルという)などの表示パネルの製造では欠かせない技術である。有機EL表示パネルは、電流の注入によって発光するエレクトロルミネッセンスを呈する有機化合物材料からなる発光層を含む2以上の有機膜の積層(以下、有機機能層という)を備えた有機エレクトロルミネッセンス素子(以下、有機EL素子という)の複数が基板上に形成された表示装置として知られている。   The conductor film connection technique is an indispensable technique in the manufacture of display panels such as recent organic electroluminescence display panels (hereinafter referred to as organic EL display panels). An organic EL display panel includes an organic electroluminescence element (hereinafter, referred to as an organic functional layer) including a laminate of two or more organic films including a light emitting layer made of an organic compound material that exhibits electroluminescence that emits light by current injection. A plurality of organic EL elements) is known as a display device formed on a substrate.

有機EL表示パネルの製造方法において、塗布法で有機機能層を形成する場合は、スピンコート法、ブレードコート法、ロールコート法、スプレー法などの基板の略全面に塗布する塗布法や、インクジェット法、フレキソ印刷法、ディスペンス法などの各種印刷法などがある。印刷法では、パターニングが容易にできる反面、均一な膜を得にくい。例えば、インクジェット法では、ノズルの詰まりや、射出量の不安定により、欠陥や膜厚ムラが起きやすい。フレキソ印刷など、版を用いる印刷法では、版が基板と接触するため、パーティクルが発生しやすい。ディスペンスによる塗布も、液の供給量を高精度にコントロールするのが難しく、膜厚ムラが起きやすい。   In the method of manufacturing an organic EL display panel, when an organic functional layer is formed by a coating method, a coating method such as a spin coating method, a blade coating method, a roll coating method, or a spraying method, which is applied to substantially the entire surface of the substrate, or an inkjet method. There are various printing methods such as flexographic printing method and dispensing method. In the printing method, patterning can be easily performed, but it is difficult to obtain a uniform film. For example, in the ink jet method, defects and film thickness unevenness are liable to occur due to nozzle clogging and unstable injection amount. In a printing method using a plate such as flexographic printing, particles tend to be generated because the plate contacts the substrate. Also with dispensing, it is difficult to control the amount of liquid supplied with high accuracy, and uneven film thickness is likely to occur.

一方、スピンコートなどの略全面に形成する塗布法では、ムラのない均一な膜を得ることができる反面、パターン形成するのが困難である。これらの問題を解決する方法が特許文献1に開示されている。特許文献1の段落(0025)に、塗布法で高分子系材料層の有機機能層を形成後、第2電極を選択的に形成し、第2電極のパターンをマスクにして有機機能層をプラズマエッチングし、第2電極を覆う第3電極を選択的に形成する製造技術が開示されている。   On the other hand, with a coating method such as spin coating, which can be formed on a substantially entire surface, a uniform film without unevenness can be obtained, but it is difficult to form a pattern. A method for solving these problems is disclosed in Patent Document 1. In paragraph (0025) of Patent Document 1, after forming an organic functional layer of a polymer-based material layer by a coating method, a second electrode is selectively formed, and the organic functional layer is formed into a plasma using the pattern of the second electrode as a mask. A manufacturing technique is disclosed in which a third electrode is selectively formed by etching and covering the second electrode.

特許文献1に開示されている有機EL表示パネルの構造では、第2電極と外部の配線との接続のための配線電極への電気的接続は、図1に示すように、第2電極を覆う第3電極を介して行われる。
特開2004−6278公報
In the structure of the organic EL display panel disclosed in Patent Document 1, electrical connection to the wiring electrode for connection between the second electrode and external wiring covers the second electrode as shown in FIG. This is done via the third electrode.
JP 2004-6278 A

従来技術の導電体膜接続構造では、図1に示すように、第2電極と配線電極間に全ての有機機能層が挟まれた箇所では、有機機能層に半導体が含まれるため、一部の界面がオーミック接触にならず、抵抗が非常に高くなり、第2電極から配線電極への電流の流れは、ほとんど全て第3電極を通して行われる。よって、電極ごとにパターン数、工程が多くなる問題があった。   In the conductor film connection structure of the prior art, as shown in FIG. 1, in the place where all the organic functional layers are sandwiched between the second electrode and the wiring electrodes, since the organic functional layer contains a semiconductor, The interface does not become ohmic contact, the resistance becomes very high, and almost all of the current flows from the second electrode to the wiring electrode through the third electrode. Therefore, there is a problem that the number of patterns and processes increase for each electrode.

本発明の解決しようとする課題には、配線電極(第1導電体膜)へ接続すべき導電体膜(第2導電体膜)の接続を簡単に形成することができる導電体膜接続構造及びその作製方法を提供することが一例として挙げられる。   Problems to be solved by the present invention include a conductor film connection structure that can easily form a connection of a conductor film (second conductor film) to be connected to a wiring electrode (first conductor film), and An example is to provide a manufacturing method thereof.

請求項1記載の導電体膜接続構造の作製方法は、表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造の作製方法であって、
第1導電体膜を基板に形成する工程と、前記第1導電体膜上に中間導電体膜を形成する工程と、
前記中間導電体膜上に第2導電体膜を形成して前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた前記中間導電体膜の接続部とを画定する工程とを含み、
前記中間導電体膜は前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記中間導電体膜の接続部の電気抵抗値を前記第1材料の電気抵抗値よりも低くさせる低抵抗化処理工程とを含むことを特徴とする。
The method for producing a conductor film connection structure according to claim 1 is a method for producing a connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
Forming a first conductor film on a substrate; forming an intermediate conductor film on the first conductor film;
A second conductor film is formed on the intermediate conductor film, and an overlapping portion of the first conductor film and the second conductor film and a connection portion of the intermediate conductor film sandwiched between the overlapping portions are provided. Defining,
The intermediate conductor film is made of a first material having an electrical resistance value higher than the higher one of the first conductor film and the second conductor film,
And a resistance reduction treatment step for lowering the electrical resistance value of the connecting portion of the intermediate conductor film to be lower than the electrical resistance value of the first material.

請求項10記載の導電体膜接続構造は、表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜は前記前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、前記中間導電体膜の接続部の前記第2導電体膜側に前記第1材料の比抵抗を低くさせる第2材料がドープされていることを特徴とする。
The conductor film connection structure according to claim 10 is a connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
An overlapping portion of the first conductor film and the second conductor film and a connection portion of an intermediate conductor film sandwiched between the overlapping portions, and the intermediate conductor film includes the first conductor film and the first conductor film. A ratio of the first material to the second conductor film side of the connecting portion of the intermediate conductor film is made of a first material having an electrical resistance value higher than the higher one of the two conductor films. A second material that lowers the resistance is doped.

請求項11記載の導電体膜接続構造は、表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜の接続部は前記前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記中間導電体膜の接続部の第1導電体膜及び中間導電体膜又は第2導電体膜及び中間導電体膜の少なくとも一つの表面に粗面を有することを特徴とする。
The conductor film connection structure according to claim 11 is a connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
An overlapping portion of the first conductor film and the second conductor film and a connecting portion of the intermediate conductor film sandwiched between the overlapping portions, and the connecting portion of the intermediate conductor film is the first conductor A first material having a higher electrical resistance value than the higher one of the film and the second conductor film,
At least one surface of the first conductor film and the intermediate conductor film or the second conductor film and the intermediate conductor film in the connection portion of the intermediate conductor film has a rough surface.

請求項12記載の導電体膜接続構造は、表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜の接続部は前記前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記第1導電体膜及び第2導電体膜が前記中間導電体膜の接続部とともに溶接された溶接部分を含むことを特徴とする。
The conductor film connection structure according to claim 12 is a connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
An overlapping portion of the first conductor film and the second conductor film and a connecting portion of the intermediate conductor film sandwiched between the overlapping portions, and the connecting portion of the intermediate conductor film is the first conductor A first material having a higher electrical resistance value than the higher one of the film and the second conductor film,
The first conductor film and the second conductor film include a welded portion welded together with a connection portion of the intermediate conductor film.

このように、本発明によれば、接続部の中間導電体膜の膜厚を部分的に薄くすることができるので、その接続部の電気抵抗を下げることができる。また、接続部の中間導電体膜の表面積を大きくすることができるので、その接続部の電気抵抗を下げることができる。さらに、接続部にレーザ光を照射すると、第1導電体膜、中間導電体膜、第2導電体膜が一旦溶解して再度固化し、接続部は少なくとも部分的に溶接した接合状態となり、低抵抗化できる。ここで、溶接はレーザ光の照射(レーザ溶接)の融接ほかに、超音波溶接などの圧接も用いることができ、接合部すなわち接続部が連続性を持つように、熱又は圧力もしくはその両者を加え、第1導電体膜、中間導電体膜、第2導電体膜を接合することができればよい。   Thus, according to this invention, since the film thickness of the intermediate conductor film of a connection part can be partially made thin, the electrical resistance of the connection part can be lowered | hung. In addition, since the surface area of the intermediate conductor film in the connection portion can be increased, the electrical resistance of the connection portion can be reduced. Further, when the connection portion is irradiated with laser light, the first conductor film, the intermediate conductor film, and the second conductor film are once melted and solidified again, so that the connection portion is at least partially welded and has a low Can be resistance. Here, in addition to fusion welding by laser beam irradiation (laser welding), welding such as ultrasonic welding can be used, and heat and / or pressure are used so that the joint portion, that is, the connection portion has continuity. And the first conductor film, the intermediate conductor film, and the second conductor film may be bonded together.

発明を実施するための形態BEST MODE FOR CARRYING OUT THE INVENTION

以下に本発明の実施形態の有機EL表示パネルを例にして導電体膜接続構造を図面を参照しつつ説明する。以下、第1導電体膜は配線電極19として、第2導電体膜は第2電極15として、中間導電体膜は抵抗結合有機膜141として、説明する。   The conductive film connection structure will be described below with reference to the drawings, taking the organic EL display panel of the embodiment of the present invention as an example. Hereinafter, the first conductor film will be described as the wiring electrode 19, the second conductor film as the second electrode 15, and the intermediate conductor film as the resistance-coupled organic film 141.

有機EL表示パネルは少なくとも1つの有機EL素子が基板に形成されたものであって、図2に示すように、基板10に形成された有機EL素子は、第1電極13と、第1電極13に接続されかつ電流の注入によって発光する有機発光層を含む2層以上の有機膜からなる有機機能層14と、有機機能層14に接続された第2電極15と、を含む。そして、有機EL表示パネルは有機EL素子の電源配線のための基板10に形成された配線電極19を含んでいる。   The organic EL display panel has at least one organic EL element formed on a substrate. As shown in FIG. 2, the organic EL element formed on the substrate 10 includes a first electrode 13 and a first electrode 13. And an organic functional layer 14 composed of two or more organic films including an organic light emitting layer that emits light by current injection, and a second electrode 15 connected to the organic functional layer 14. The organic EL display panel includes a wiring electrode 19 formed on the substrate 10 for power supply wiring of the organic EL element.

基板10には、ガラスや樹脂を用いるのが一般的である。基板10は、有機EL素子を駆動するためのトランジスタなどの素子、カラーフィルタ、色変換層などを含んでいてもよい。   The substrate 10 is generally made of glass or resin. The substrate 10 may include an element such as a transistor for driving the organic EL element, a color filter, a color conversion layer, and the like.

第1電極13及び第2電極15は、有機EL素子の陽極もしくは陰極である。一方が陽極の場合は他方を陰極にとする。電極材料としては、既知の有機EL素子の陽極、陰極材料を用いることができ、光の取り出し側の電極に透光性材料を用いる。パッシブ駆動型のパネルを作製するために、いずれも直交するパターンをストライブ状としてもよいしアクティブ駆動型のパネル作製するために、所定のパターンを画素(発光部)に対応した島状としてもよい。   The first electrode 13 and the second electrode 15 are an anode or a cathode of the organic EL element. When one is an anode, the other is a cathode. As the electrode material, anode and cathode materials of known organic EL elements can be used, and a light-transmitting material is used for the electrode on the light extraction side. In order to produce a passive drive type panel, any of the orthogonal patterns may be striped, or in order to produce an active drive type panel, a predetermined pattern may be an island shape corresponding to a pixel (light emitting portion). Good.

有機機能層14は、図2に示すように、有機発光層を含む機能有機膜142と導電性有機材料からなる抵抗結合有機膜141からなる。素子において積層されている抵抗結合有機膜141は第2電極15及び配線電極19間にまで延在しかつ積層された接続部Cnの一部を構成している。すなわち、抵抗結合有機膜141は機能有機材料に属するが、有機機能層14は、導電性有機材料からなる抵抗結合有機膜141、抵抗結合有機膜141以外の機能有機膜142からなる。抵抗結合有機膜141及び機能有機膜142は、単層であっても、複数の層からなっていてもよい。機能有機膜142は、第1電極13を覆うように形成され、接続部Cnには形成しなくてもよい。   As shown in FIG. 2, the organic functional layer 14 includes a functional organic film 142 including an organic light emitting layer and a resistance-coupled organic film 141 made of a conductive organic material. The resistive coupling organic film 141 laminated in the element extends between the second electrode 15 and the wiring electrode 19 and constitutes a part of the laminated connection portion Cn. That is, although the resistive coupling organic film 141 belongs to a functional organic material, the organic functional layer 14 is composed of a resistive organic film 141 made of a conductive organic material and a functional organic film 142 other than the resistive coupling organic film 141. The resistance coupling organic film 141 and the functional organic film 142 may be a single layer or a plurality of layers. The functional organic film 142 is formed so as to cover the first electrode 13 and may not be formed in the connection portion Cn.

たとえば、抵抗結合有機膜141は、第2電極15と略同一の領域に、第1電極13と配線電極19の接続部Cnを覆う部分に略全面に形成される。なお、「略全面」とは、発光部間のギャップ部分などに形成されていない部分があってもよいことを言い、隙間なく完全に連続して形成される場合も当然含む。抵抗結合有機膜141を第2電極15と略同一のパターンに形成するためには、抵抗結合有機膜141を基板10の略全面に形成した後、第2電極15のパターンをマスクにして抵抗結合有機膜141をエッチングすればよい。重ねてエッチングにすることで、自己整合的に、抵抗結合有機膜141を第2電極15と略同一のパターンに形成できる。   For example, the resistance-coupled organic film 141 is formed in substantially the same region as the second electrode 15 on the entire surface covering the connection portion Cn between the first electrode 13 and the wiring electrode 19. Note that “substantially the entire surface” means that there may be a portion that is not formed in a gap portion or the like between light emitting portions, and naturally includes a case where it is formed completely continuously without a gap. In order to form the resistively coupled organic film 141 in a pattern substantially the same as that of the second electrode 15, the resistively coupled organic film 141 is formed on substantially the entire surface of the substrate 10, and then the resistively coupled organic film 141 is masked using the pattern of the second electrode 15 as a mask. The organic film 141 may be etched. By overlapping and etching, the resistively-coupled organic film 141 can be formed in substantially the same pattern as the second electrode 15 in a self-aligning manner.

有機機能層14を図3を用いて説明する。図3は、第1電極13及び第2電極15が陽極及び陰極である場合の有機EL素子である。機能有機膜142である主に有機物からなる発光層において、陽極からホールが陰極から電子が注入され、再結合し発光する。有機EL素子の有機機能層14は、例えば、陽極の第1電極13から陰極の第2電極15へ順に積層されたホール注入層/ホール輸送層/発光層/電子輸送層/電子注入層のそれぞれの機能を持つ複数の機能有機材料の膜からなる。さらに、ホール輸送層及び発光層間に電子ブロック層を、発光層及び電子輸送層にホールブロック層を機能有機膜として設けることもできる。なお、発光層を除き、ホール注入層、ホール輸送層、電子輸送層、電子注入層、電子ブロック層及びホールブロック層のいずれかは省略してもよい。抵抗結合有機膜141と機能有機膜142の区別は発光層の有無と電導性によりなされる。すなわち、抵抗結合有機膜141は第1導電体膜(配線電極19)及び第2導電体膜(第2電極15)のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料から構成されていればよい。   The organic functional layer 14 will be described with reference to FIG. FIG. 3 shows an organic EL device in which the first electrode 13 and the second electrode 15 are an anode and a cathode. In the light-emitting layer mainly composed of an organic material, which is the functional organic film 142, holes are injected from the anode and electrons are injected from the cathode, and recombine to emit light. The organic functional layer 14 of the organic EL element includes, for example, a hole injection layer / a hole transport layer / a light emitting layer / an electron transport layer / an electron injection layer stacked in order from the first electrode 13 of the anode to the second electrode 15 of the cathode. It consists of a plurality of functional organic material films having the following functions. Further, an electron blocking layer can be provided as a functional organic film between the hole transport layer and the light emitting layer, and the hole blocking layer can be provided as a functional organic film in the light emitting layer and the electron transport layer. Except for the light emitting layer, any of the hole injection layer, the hole transport layer, the electron transport layer, the electron injection layer, the electron block layer, and the hole block layer may be omitted. The resistance-coupled organic film 141 and the functional organic film 142 are distinguished from each other by the presence / absence of a light-emitting layer and conductivity. That is, the resistance-coupled organic film 141 is a first material having an electrical resistance value higher than the higher one of the first conductor film (wiring electrode 19) and the second conductor film (second electrode 15). It should just be comprised from.

各々の有機機能層14は、通常、有機物からなり、更に、低分子、デンドリマー高分子の有機物からなる場合がある。低分子の有機物からなる有機機能層14は一般に蒸着法などのドライプロセス(真空プロセス)によって、高分子やデンドリマーの有機物からなる有機機能層14は一般に塗布法によって、それぞれ形成されるのが一般的である。一部に、塗布法が可能である有機溶媒に可溶な低分子材料、蒸着が可能である高分子材料も存在する。一般に、有機機能層14に用いられる発光層などの材料には、P型やN型の有機半導体、もしくはバイポーラ性の有機半導体を用いることが多い。しかし、素子を高性能化するために有機機能層14の一部を、導電性の有機物で形成される例も報告されている。例えば、有機機能層14に用いる導電性高分子材料として、PEDOT(poly(3,4-ethylene dioxythiophene))、ポリアニリン、ボリパラフェニレンビニレン誘導体、ポリチオフェン誘導体、ポリパラフェニレン誘導体、ポリアルキルフェニレン、ポリアセチレン誘導体、などが挙げられている。更に、これらの有機機能層14に用いる導電性高分子材料は、トルエン、ベンゼン、クロロベンゼン、ジクロロベンゼン、クロロホルム、テトラリン、キシレン、アニソール、ジクロロメタン、γブチロラクトン、ブチルセルソルブ、シクロヘキサン、NMP(N−メチル−2−ピロリドン)、ジメチルスルホキシド、シクロヘキサノン、ジオキサン、または、THF(テトラヒドロフラン)などの溶媒から選ばれた1種または複数種、に前駆体を溶解し、塗布される。溶媒としては、前述の溶媒の他、PGME(propyleneglycol monomethyl ether)、PGMEA(propyleneglycol monomethyl ether acetate)、乳酸エチル、DMAc(N.N-dimethylacetamide)、MEK(methyl ethyl ketone)、MIBK(methyl isobutyl ketone)、IPA(iso propyl alcohol)、エタノールなど、既知の溶剤を用いることができる。塗布方法としては、スピンコート、ブレードコート、ロールコート、スプレーなどの基板10の略全面に塗布する方法、インクジェット、フレキソ印刷法、ディスペンス法などの各種印刷法など、所定のパターンに塗布する方法がある。   Each organic functional layer 14 is usually made of an organic material, and may further be made of a low-molecular or dendrimer polymer organic material. The organic functional layer 14 made of a low molecular organic substance is generally formed by a dry process (vacuum process) such as a vapor deposition method, and the organic functional layer 14 made of a polymer or dendrimer organic substance is generally formed by a coating method. It is. Some of them are low-molecular materials soluble in organic solvents that can be applied, and high-molecular materials that can be vapor-deposited. In general, as a material such as a light emitting layer used for the organic functional layer 14, a P-type or N-type organic semiconductor or a bipolar organic semiconductor is often used. However, an example in which a part of the organic functional layer 14 is formed of a conductive organic material has been reported in order to improve the performance of the device. For example, PEDOT (poly (3,4-ethylene dioxythiophene)), polyaniline, polyparaphenylene vinylene derivative, polythiophene derivative, polyparaphenylene derivative, polyalkylphenylene, polyacetylene derivative are used as the conductive polymer material used for the organic functional layer 14. , Etc. are mentioned. Further, conductive polymer materials used for these organic functional layers 14 are toluene, benzene, chlorobenzene, dichlorobenzene, chloroform, tetralin, xylene, anisole, dichloromethane, γ-butyrolactone, butyl cellosolve, cyclohexane, NMP (N-methyl). -2-pyrrolidone), dimethyl sulfoxide, cyclohexanone, dioxane, or one or more selected from solvents such as THF (tetrahydrofuran) are dissolved and applied. As the solvent, in addition to the above-mentioned solvents, PGME (propyleneglycol monomethyl ether), PGMEA (propyleneglycol monomethyl ether acetate), ethyl lactate, DMAc (NN-dimethylacetamide), MEK (methyl ethyl ketone), MIBK (methyl isobutyl ketone), IPA Known solvents such as (iso propyl alcohol) and ethanol can be used. Examples of the coating method include a method of coating a predetermined pattern, such as a method of coating substantially the entire surface of the substrate 10 such as spin coating, blade coating, roll coating, spraying, and various printing methods such as inkjet, flexographic printing, and dispensing. is there.

導電性有機材料はホール注入層として用いるのが有用である場合が多いので、その場合は、機能有機材料のうち抵抗結合有機膜141をホール注入層とし、発光層など他の膜の少なくとも1つを機能有機膜142とすればよい。すなわち、他の例においては、抵抗結合有機膜141として、ホール輸送層、発光層、電子輸送層、電子注入層の少なくとも1つが設定される。   In many cases, it is useful to use a conductive organic material as a hole injection layer. In this case, the resistance-coupled organic film 141 of the functional organic material is used as a hole injection layer, and at least one of other films such as a light emitting layer is used. May be the functional organic film 142. That is, in another example, at least one of a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is set as the resistance coupling organic film 141.

配線電極19は、有機EL表示パネルやLCDで用いられる既知の配線材料を用いることができる。配線電極19及び第2電極15の間の抵抗結合有機膜141の接続部Cnを通して、素子は外部の駆動回路に接続される。ただし、抵抗結合有機膜141を形成するための塗布液が酸性の溶液である場合、配線電極19の表面は、Cr、Ta、Mo、Tiなどの耐酸性の高い材料で形成されていることが望ましい。   As the wiring electrode 19, a known wiring material used in an organic EL display panel or LCD can be used. The element is connected to an external drive circuit through the connection portion Cn of the resistance coupling organic film 141 between the wiring electrode 19 and the second electrode 15. However, when the coating solution for forming the resistance-coupled organic film 141 is an acidic solution, the surface of the wiring electrode 19 may be formed of a material with high acid resistance such as Cr, Ta, Mo, Ti. desirable.

中間導電体膜は抵抗結合有機膜141として説明するが、有機材料だけでなく無機材料からなる中間導電体膜を用いても同様の効果を奏する。たとえば、表示パネルに複数の有機EL素子とともに作り込まれる複数の有機トランジスタと配線電極との接続にも利用できる。   Although the intermediate conductor film will be described as the resistance-coupled organic film 141, the same effect can be obtained by using an intermediate conductor film made of an inorganic material as well as an organic material. For example, the present invention can be used for connection between a plurality of organic transistors and wiring electrodes built in a display panel together with a plurality of organic EL elements.

図4は基板10上にマトリクス状に配置された複数の有機EL素子を備えたパッシブ駆動型有機EL表示パネルの部分拡大背面図である。   FIG. 4 is a partially enlarged rear view of a passive drive type organic EL display panel provided with a plurality of organic EL elements arranged in a matrix on the substrate 10.

図示の有機EL表示パネルは、透明電極層を含む行電極の複数の第1電極13と、有機機能層と、該行電極に交差する金属電極層を含む列電極の複数の第2電極15と、が基板10上に順次積層されて構成されている。行電極は、各々が帯状に形成されるとともに、所定の間隔をおいて互いに平行となるように配列されており、列電極も同様である。このように、マトリクス表示パネルは、複数の行と列の電極の交差点に形成された複数の有機EL素子の発光部からなる表示領域を有している。第2電極15は、接続部Cnを介して配線電極19に接続されている。   The illustrated organic EL display panel includes a plurality of first electrodes 13 of row electrodes including transparent electrode layers, an organic functional layer, and a plurality of second electrodes 15 of column electrodes including metal electrode layers intersecting the row electrodes. Are sequentially stacked on the substrate 10. The row electrodes are each formed in a strip shape and are arranged so as to be parallel to each other at a predetermined interval, and the same applies to the column electrodes. As described above, the matrix display panel has a display region including light emitting portions of a plurality of organic EL elements formed at intersections of a plurality of row and column electrodes. The second electrode 15 is connected to the wiring electrode 19 via the connection portion Cn.

第1電極13は、島状の透明電極を水平方向に電気的に接続する金属バスラインから構成してもよい。第2電極15の上には図示しないが封止膜として窒化酸化シリコン、窒化シリコンなどの窒化物、或いは酸化物又は炭素などの無機物からなる無機パッシベーション膜を備えてもよい。有機EL表示パネルは平行電極間に基板10上の有機EL素子の間に設けられた複数の絶縁物からなる隔壁を備えることもできる。無機パッシベーション膜の封止膜には、フッ素系やシリコン系の樹脂、その他、フォトレジスト、ポリイミドなど合成樹脂膜との多層とすることもできる。   The first electrode 13 may be formed of a metal bus line that electrically connects the island-shaped transparent electrodes in the horizontal direction. Although not shown, an inorganic passivation film made of a nitride such as silicon nitride oxide or silicon nitride, or an oxide or an inorganic substance such as carbon may be provided on the second electrode 15 as a sealing film. The organic EL display panel can also include a partition made of a plurality of insulators provided between the organic EL elements on the substrate 10 between the parallel electrodes. The sealing film of the inorganic passivation film may be a multilayer with a fluorine-based or silicon-based resin, or a synthetic resin film such as photoresist or polyimide.

上記有機EL表示パネルの製造方法を、図4のAAの断面を示す図5などを用いて説明する。   A method for manufacturing the organic EL display panel will be described with reference to FIG. 5 showing a cross section of AA in FIG.

図5に示すように、基板10上の表示領域(発光部が配列されるべき領域)に、第1電極13を形成する。基板10上には、予め有機EL素子を駆動するためのトランジスタなどの素子、カラーフィルタ、色変換層などを設けておいて、それらの上に第1電極13を形成してもよい。   As shown in FIG. 5, the first electrode 13 is formed in the display area on the substrate 10 (area where the light emitting portions are to be arranged). An element such as a transistor for driving an organic EL element, a color filter, a color conversion layer, and the like may be provided on the substrate 10 in advance, and the first electrode 13 may be formed thereon.

パッシブ駆動型のパネルを作製するために、第1電極13のパターンをストライプ状としてもよいし、アクティブ駆動型のパネルを作製するために、第1電極13のパターンを発光部に対応した島状としてもよい。第1電極13が有機EL素子の陽極であってもよい。   In order to produce a passive drive type panel, the pattern of the first electrode 13 may be a stripe shape, or in order to produce an active drive type panel, the pattern of the first electrode 13 is an island shape corresponding to the light emitting portion. It is good. The first electrode 13 may be an anode of an organic EL element.

図示しないが、第1電極13の形成後に、第2電極15のパターニングに用いる隔壁を形成してもよいし、発光部(画素)のギャップ部分に絶縁膜を形成してもよい。   Although not illustrated, after the first electrode 13 is formed, a partition wall used for patterning the second electrode 15 may be formed, or an insulating film may be formed in a gap portion of the light emitting portion (pixel).

図6に示すように、表示領域の外側に、第2電極15を外部に引き出すための配線電極19を形成する。配線電極19は、後の工程で画定する接続部Cnを確保するために所定の面積を有している。配線電極19の形成は第1電極13形成の前に行ってもよいし、第2電極15と同一材料で配線電極19を構成してそれらを同時に形成してもよい。また、基板10自身に導電性を有する場合は、基板10を配線電極19の代わりにして基板10表面を所定面積で露出させてもよい。これら同時形成及び基板利用の場合、配線電極19の形成工程が不要となる。   As shown in FIG. 6, a wiring electrode 19 for leading the second electrode 15 to the outside is formed outside the display area. The wiring electrode 19 has a predetermined area in order to secure a connection portion Cn defined in a later step. The wiring electrode 19 may be formed before the first electrode 13 is formed, or the wiring electrode 19 may be formed of the same material as that of the second electrode 15 and formed simultaneously. When the substrate 10 itself has conductivity, the surface of the substrate 10 may be exposed with a predetermined area instead of the wiring electrode 19. In the case of these simultaneous formation and substrate utilization, the formation process of the wiring electrode 19 becomes unnecessary.

図7に示すように、基板10(第1電極13及び配線電極19を含む)の略全面に、導電性の有機材料からなる抵抗結合有機膜141を形成する。配線電極19上の抵抗結合有機膜141が接続部Cnとなる。   As shown in FIG. 7, a resistance-coupled organic film 141 made of a conductive organic material is formed on substantially the entire surface of the substrate 10 (including the first electrode 13 and the wiring electrode 19). The resistance coupling organic film 141 on the wiring electrode 19 becomes the connection portion Cn.

抵抗結合有機膜141には前述したような導電性の有機材料を用いることができる。例えば、抵抗結合有機膜141がホール注入層であってもよい。   For the resistance coupling organic film 141, a conductive organic material as described above can be used. For example, the resistive coupling organic film 141 may be a hole injection layer.

形成する方法としては、前述した通り、塗布法や蒸着法を用いることができる。略全面に形成するには、スピンコート、ブレードコート、ロールコート、スプレー塗布、蒸着法などが特に適している。   As a forming method, as described above, a coating method or a vapor deposition method can be used. Spin coating, blade coating, roll coating, spray coating, vapor deposition and the like are particularly suitable for forming almost the entire surface.

有機EL表示パネルにおいて、第2電極15及び配線電極19間の接続部Cnの抵抗は、低ければ低い方がよい。よって、接続部Cnの抵抗を低くするために、低抵抗構造として抵抗結合有機膜141の少なくとも接続部Cnに、部分的に比抵抗が低い材料部分となる構造を形成する。   In the organic EL display panel, the resistance of the connection portion Cn between the second electrode 15 and the wiring electrode 19 is preferably as low as possible. Therefore, in order to reduce the resistance of the connection portion Cn, a structure having a material portion having a low specific resistance is formed in at least the connection portion Cn of the resistive coupling organic film 141 as a low resistance structure.

図8に示すように、抵抗結合有機膜141を形成後インクジェットノズルを用いて部分的に接続部Cnに抵抗結合有機膜141の比抵抗を低くするドーパントの溶液を塗布し乾燥拡散させる。この場合、接続部のためのたとえば金属ナノ粒子をドープする成膜工程を設けて全体として接続部のシート抵抗を低くできる。また、電子のドナーやアクセプタとなり得る材料をドープしてもよい。かかるドーピング処理が低抵抗化処理工程である。このように、ドーパントとしても第2材料を接続部Cnに付与する。   As shown in FIG. 8, after forming the resistive coupling organic film 141, a dopant solution that lowers the specific resistance of the resistive coupling organic film 141 is partially applied to the connection portion Cn using an ink jet nozzle and dried and diffused. In this case, the sheet resistance of the connection portion can be lowered as a whole by providing a film forming step for doping metal nanoparticles for the connection portion, for example. Further, a material that can be an electron donor or acceptor may be doped. Such a doping process is a low resistance process. Thus, the second material is applied to the connection portion Cn as a dopant.

図9に示すように、接続部Cnの抵抗結合有機膜141に部分的に周囲よりも低い比抵抗値の領域(ハッチ部分)を形成した後、配線電極19上を除き第1電極13を覆う部分に、抵抗結合有機膜141以外の有機機能層となる機能有機膜142を形成する。例えば、機能有機膜142はホール輸送層、発光層、電子輸送層、電子注入層などであってもよい。ここで、機能有機膜142を発光色によって塗り分ける工程を実行することができる。更に、機能有機膜142を、後に画定する抵抗結合有機膜141及び第2電極15のパターンよりも狭い領域に形成する。接続部になるべき部分に機能有機膜142を形成すると抵抗が高くなり、発光色によって塗り分ける場合には必要であるからである。   As shown in FIG. 9, after a region having a specific resistance value (hatch portion) lower than the surroundings is partially formed in the resistance coupling organic film 141 of the connection portion Cn, the first electrode 13 is covered except on the wiring electrode 19. A functional organic film 142 serving as an organic functional layer other than the resistance-coupled organic film 141 is formed in the portion. For example, the functional organic film 142 may be a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, or the like. Here, a step of coating the functional organic film 142 according to the emission color can be executed. Furthermore, the functional organic film 142 is formed in a region narrower than the pattern of the resistance coupling organic film 141 and the second electrode 15 defined later. This is because if the functional organic film 142 is formed in a portion to be a connection portion, the resistance is increased, and it is necessary in the case of separately coating depending on the emission color.

図10に示すように、第2電極15を所定のパターン(配線電極19の一部を後に外部接続用に露出させるために抵抗結合有機膜141の面積よりも小である)で形成する。第2電極15は、後に行う抵抗結合有機膜141のエッチング工程でマスクとして機能させるため、耐エッチング性が高いことが望ましい。通常、電極材料として用いられる金属や金属酸化物は、耐エッチング性が高いので問題ない。   As shown in FIG. 10, the second electrode 15 is formed in a predetermined pattern (which is smaller than the area of the resistance-coupled organic film 141 in order to expose a part of the wiring electrode 19 for external connection later). Since the second electrode 15 functions as a mask in the subsequent etching process of the resistively coupled organic film 141, it is desirable that the second electrode 15 has high etching resistance. Usually, a metal or metal oxide used as an electrode material has no problem because it has high etching resistance.

一方、第2電極15材料として、導電性の高分子などを用いる場合には、抵抗結合有機膜141と同程度のエッチング速度となるため、注意が必要である。その場合は、でき上がりに必要な膜厚に、エッチングにより減じる膜厚分を加えた高分子膜厚を形成しておくことで、問題を解決できる。   On the other hand, when a conductive polymer or the like is used as the second electrode 15 material, the etching rate is about the same as that of the resistance-coupled organic film 141, so care must be taken. In that case, the problem can be solved by forming a polymer film thickness obtained by adding a film thickness that is reduced by etching to a film thickness necessary for completion.

第2電極15の形成方法としては、蒸着、スパッタ、印刷などを用いることができる。第2電極15をパターニングする方法は、特に限定されないが、通常のフォトリソグラフィは溶液を用いるため、有機機能層14に悪影響を及ぼす可能性が高い。よって、マスク蒸着や、マスクスパッタによってパターニングするのが好ましい。また、第1電極13上に設けた隔壁によって、パターニングしてもよい。   As a method of forming the second electrode 15, vapor deposition, sputtering, printing, or the like can be used. The method of patterning the second electrode 15 is not particularly limited, but since normal photolithography uses a solution, there is a high possibility that the organic functional layer 14 will be adversely affected. Therefore, it is preferable to pattern by mask vapor deposition or mask sputtering. Further, patterning may be performed by a partition provided on the first electrode 13.

パッシブ駆動型のパネルを作製するために、第2電極15をストライプ状に形成してもよいし、アクティブ駆動型のパネルを作製するために、第2電極15を略全面状に形成してもよい。第2電極15が有機EL素子の陰極であってもよい。   In order to produce a passive drive type panel, the second electrode 15 may be formed in a stripe shape, or in order to produce an active drive type panel, the second electrode 15 may be formed on a substantially entire surface. Good. The second electrode 15 may be a cathode of the organic EL element.

図11に示すように、第2電極15のパターンをマスクにして、抵抗結合有機膜141をエッチングする。有機機能層14は一般に、耐湿性が弱いため、エッチング方法は、プラズマ化したガスを用いるドライエッチングが好ましい。ドライエッチングに用いるガスは、O2、Ar、CF4などやこれらの混合ガスを用いることができる。特にO2を含むガスを用いると、有機物からなる抵抗結合有機膜141は良くエッチングされるが、無機物からなる第2電極15はほとんどエッチングされず、好適である。 As shown in FIG. 11, the resistive coupling organic film 141 is etched using the pattern of the second electrode 15 as a mask. Since the organic functional layer 14 generally has low moisture resistance, the etching method is preferably dry etching using a plasma gas. As a gas used for dry etching, O 2 , Ar, CF 4 , or a mixed gas thereof can be used. In particular, when a gas containing O 2 is used, the resistance-coupled organic film 141 made of an organic material is well etched, but the second electrode 15 made of an inorganic material is hardly etched, which is preferable.

図12に示すように、第2電極15に覆われていない部分の抵抗結合有機膜141が除去され、配線電極19の一部が外部接続用に露出するとともに、自己整合的に第2電極15と略同一パターンの抵抗結合有機膜141が得られ、接続部Cnが画定される。   As shown in FIG. 12, the portion of the resistively coupled organic film 141 not covered with the second electrode 15 is removed, a part of the wiring electrode 19 is exposed for external connection, and the second electrode 15 is self-aligned. As a result, a resistance-coupled organic film 141 having substantially the same pattern is obtained, and the connection portion Cn is defined.

なお、パターン精度は劣るが第2電極よりも上の層に別にエッチングマスクとなる層を形成しエッチングを行ってもよい。   Although the pattern accuracy is inferior, etching may be performed by forming a layer serving as an etching mask separately on the layer above the second electrode.

この後、カラーフィルタや色変換層を形成してもよいし、封止を行ってもよい。   Thereafter, a color filter or a color conversion layer may be formed, or sealing may be performed.

実施形態の有機EL表示パネルの第2電極15と配線電極19の接続部Cnの接続抵抗を以下に説明する。   The connection resistance of the connection portion Cn between the second electrode 15 and the wiring electrode 19 of the organic EL display panel of the embodiment will be described below.

第2電極15は、配線電極19の接続部Cnに、抵抗結合有機膜141を介して電気的に接続される。有機機能層14と第2電極15及び配線電極19は一般にオーミックに接触するから、第2電極15と配線電極19の接続抵抗は、接続部Cnで第2電極15と配線電極19に挟まれた抵抗結合有機膜141の膜厚方向の抵抗値にほぼ等しいと考えてよい。接続部Cnの面積をS、抵抗結合有機膜141の膜厚をd、抵抗結合有機膜141の比抵抗をρとすると、第2電極15と配線電極19の接続抵抗Rは、R=ρ×d/Sと表される。   The second electrode 15 is electrically connected to the connection portion Cn of the wiring electrode 19 through the resistance coupling organic film 141. Since the organic functional layer 14, the second electrode 15, and the wiring electrode 19 are generally in ohmic contact, the connection resistance between the second electrode 15 and the wiring electrode 19 is sandwiched between the second electrode 15 and the wiring electrode 19 at the connection portion Cn. It may be considered that the resistance value in the film thickness direction of the resistance coupling organic film 141 is substantially equal. When the area of the connection portion Cn is S, the film thickness of the resistive coupling organic film 141 is d, and the specific resistance of the resistive coupling organic film 141 is ρ, the connection resistance R between the second electrode 15 and the wiring electrode 19 is R = ρ × It is expressed as d / S.

有機EL素子は電流注入型の素子であるため、接続抵抗Rの値が大きいと、この部分での電圧降下や電力の消費があり、好ましくない。よって、接続部の抵抗結合有機膜141の膜厚方向の抵抗値(接続抵抗Rの値)は、好ましくは1kΩ以下、さらに好ましくは100Ω以下にした方がよい。   Since the organic EL element is a current injection type element, if the value of the connection resistance R is large, there is a voltage drop and power consumption at this portion, which is not preferable. Therefore, the resistance value (value of connection resistance R) of the resistive coupling organic film 141 in the connection portion is preferably 1 kΩ or less, more preferably 100Ω or less.

抵抗結合有機膜141は導電性を有し、膜厚は通常、100nm程度で非常に薄いため、接続部Cnにおける抵抗結合有機膜141の膜厚方向の抵抗値は、有機EL素子の有機機能層14合計の抵抗値よりも低い値となる。   Since the resistive coupling organic film 141 has conductivity and the film thickness is usually about 100 nm and is very thin, the resistance value in the film thickness direction of the resistive coupling organic film 141 at the connection portion Cn is the organic functional layer of the organic EL element. It becomes a value lower than the total 14 resistance values.

例えば、導電性の有機材料として一般に用いられるPEDOT(PEDT/PSS)(ポリ(3,4−エチレンジオキシチオフェン)/ポリ(4−スチレンスルホナート))の比抵抗ρは概ねρ=103〜106Ω・cm程度である。仮にアクティブ型の有機EL表示パネルを想定し、接続部Cnの面積を1mm角(面積S=10-2cm2)、抵抗結合有機膜141の膜厚dを100nm=10-5cmとしPEDOTを用いた場合、接続部Cnにおける抵抗結合有機膜141の膜厚方向の抵抗Rは、R=ρ×d/S=(103〜106)×10-5/10-2=1〜103Ωとなり、この場合は良好な接続抵抗が得られることがわかる。 For example, the specific resistance ρ of PEDOT (PEDT / PSS) (poly (3,4-ethylenedioxythiophene) / poly (4-styrenesulfonate)) generally used as a conductive organic material is approximately ρ = 10 3 to It is about 10 6 Ω · cm. Assuming an active organic EL display panel, the area of the connection portion Cn is 1 mm square (area S = 10 −2 cm 2 ), the film thickness d of the resistive coupling organic film 141 is 100 nm = 10 −5 cm, and PEDOT When used, the resistance R in the film thickness direction of the resistive coupling organic film 141 at the connection portion Cn is R = ρ × d / S = (10 3 to 10 6 ) × 10 −5 / 10 −2 = 1 to 10 3. In this case, it can be seen that a good connection resistance can be obtained.

一般に有機EL素子は耐湿性が弱い。これは、各層の界面に水分が侵入し素子を侵すことが一因であるけれども、実施形態の有機EL表示パネルにおいて、抵抗結合有機膜141及び第2電極15のパターンよりも狭い領域に機能有機膜142を形成すると、第2電極15端面に露出する界面は、抵抗結合有機膜141の上下の界面と、抵抗結合有機膜141が複数の層からなる場合は各層の界面のみである。機能有機膜142に関しては、層の上下の界面、層の中の界面は露出せず、透湿性の低い第2電極15に覆われた状態となる。よって、素子耐久性の向上に寄与する。   In general, the organic EL element has low moisture resistance. This is partly due to moisture invading the interface of each layer and invading the element. However, in the organic EL display panel of the embodiment, a functional organic material is formed in a region narrower than the pattern of the resistance coupling organic film 141 and the second electrode 15. When the film 142 is formed, the interfaces exposed at the end face of the second electrode 15 are only the upper and lower interfaces of the resistive coupling organic film 141 and, if the resistive coupling organic film 141 is composed of a plurality of layers, only the interface of each layer. With respect to the functional organic film 142, the upper and lower interfaces of the layer and the interface within the layer are not exposed, and are covered with the second electrode 15 having low moisture permeability. Therefore, it contributes to improvement of element durability.

さらに、実施形態の有機EL表示パネル製造方法において、抵抗結合有機膜141のパターニングに、マスクなどの「型」を必要としないで第2電極15とほぼ同一のパターンで形成できるので、工程の削減に貢献する。さらに、第2電極15と配線電極19で挟まれる部分が抵抗の低い抵抗結合有機膜141のみとなるので、この部分の接続抵抗が低い状態を獲得できる。   Furthermore, in the organic EL display panel manufacturing method of the embodiment, the patterning of the resistance-coupled organic film 141 can be formed with substantially the same pattern as the second electrode 15 without requiring a “type” such as a mask, thereby reducing the number of processes. To contribute. Furthermore, since the portion sandwiched between the second electrode 15 and the wiring electrode 19 is only the resistance-coupled organic film 141 having a low resistance, a state where the connection resistance of this portion is low can be obtained.

<他の実施形態>
また、低抵抗構造は、接続部Cnに対応する配線電極19の部分を予めパターニングして表面に凹凸を設けることにより、実現できる。たとえば、図6に示す配線電極形成工程にて、配線電極19を凹凸表面を有するように形成すれば、ドーパントを塗布する工程を行わずとも、図13に示すように、接続部Cnの抵抗結合有機膜141は凹凸となり、その表面積が大きくなると同時に、凹凸の角部で抵抗結合有機膜141の膜厚が部分的に薄くなり、接続抵抗を低くできる。かかる一連の処理が低抵抗化処理工程である。なお、配線電極19の接続部Cn部分の凹凸は多層にしてもよい。凹凸の高低差は低抵抗化のために、抵抗結合有機膜141の膜厚の1/2以上が望ましく、さらに該膜厚以上であるとより好ましい。
<Other embodiments>
Further, the low resistance structure can be realized by previously patterning the portion of the wiring electrode 19 corresponding to the connection portion Cn to provide unevenness on the surface. For example, if the wiring electrode 19 is formed so as to have an uneven surface in the wiring electrode forming step shown in FIG. 6, the resistance coupling of the connecting portion Cn can be performed as shown in FIG. 13 without performing the step of applying the dopant. The organic film 141 is uneven, and the surface area is increased. At the same time, the film thickness of the resistance-coupled organic film 141 is partially reduced at the corners of the unevenness, and the connection resistance can be lowered. Such a series of processes is a resistance reduction process. In addition, the unevenness | corrugation of the connection part Cn part of the wiring electrode 19 may be multilayered. The height difference of the unevenness is preferably 1/2 or more of the film thickness of the resistance-coupled organic film 141 for lowering the resistance, and more preferably more than this film thickness.

本実施形態は、図14に示すように、ドーピング無しで抵抗結合有機膜141に界面面積が周囲よりも大きく部分的に薄くなった低い抵抗値の接続部Cnを形成した以外、上記構造と同一の構造を有する。   As shown in FIG. 14, the present embodiment is the same as the above-described structure except that a low-resistance connection portion Cn having an interface area larger than that of the surrounding area and partially thinned is formed in the resistive coupling organic film 141 without doping. It has the structure of.

さらに、他の低抵抗構造及び低抵抗化処理工程は、抵抗結合有機膜形成工程の後工程でのレーザ光照射などで形成することができる。すなわち、低抵抗構造は、図15に示すように、抵抗結合有機膜141を形成後、ドーピングに代えて抵抗結合有機膜の接続部Cnにレーザ光を照射し、図16に示すように、抵抗結合有機膜141に凹凸を作ること、あるいは、図17に示すように、抵抗結合有機膜141を部分的に除去することで実現できる。そうすれば、図18および図19に示すように、本実施形態では、接続部Cnの抵抗結合有機膜141に部分的に第2電極15及び第1電極13が短絡しより低い抵抗値の領域を形成した以外、上記低抵抗構造と同一の構造を有することができる。   Furthermore, the other low-resistance structure and the low-resistance treatment process can be formed by laser light irradiation or the like in a subsequent process of the resistance-coupled organic film forming process. That is, in the low resistance structure, as shown in FIG. 15, after forming the resistive coupling organic film 141, the connection portion Cn of the resistive coupling organic film is irradiated with laser light instead of doping, and as shown in FIG. This can be realized by forming irregularities in the combined organic film 141 or by partially removing the resistively bonded organic film 141 as shown in FIG. Then, as shown in FIGS. 18 and 19, in the present embodiment, the second electrode 15 and the first electrode 13 are partially short-circuited to the resistance-coupled organic film 141 of the connection portion Cn, and a region having a lower resistance value is formed. Except for forming the above, it can have the same structure as the low resistance structure.

また、図20に示すように、ドーピング無しで第2電極15までの形成後に、接続部Cnの第2電極15の上からレーザ光を照射すると、この部分で、第2電極15、抵抗結合有機膜141及び第1電極13が一旦溶解して接合箇所が連続性を持つように再度固化し、両者を融合させ、図21に示すように、接続部Cnを介して溶接状態となり、低抵抗化が達成できる。なお、配線電極19の接続部Cn部分は多層にしてもよいし、上記のように抵抗結合有機膜141に低抵抗材、吸光材などのドーピングを行ってもよい。レーザ光による変性に有効である。なお、レーザ光は図20の場合と反対に基板側から照射してもよい。   In addition, as shown in FIG. 20, after the formation up to the second electrode 15 without doping, when laser light is irradiated from above the second electrode 15 of the connection portion Cn, the second electrode 15 and the resistance-coupled organic material are formed in this portion. The film 141 and the first electrode 13 are once melted and solidified again so that the joint portion has continuity, and both are fused, and as shown in FIG. 21, a welded state is obtained via the connection portion Cn, thereby reducing the resistance. Can be achieved. Note that the connection portion Cn portion of the wiring electrode 19 may be multilayered, or the resistive coupling organic film 141 may be doped with a low resistance material, a light absorbing material, or the like as described above. Effective for denaturation by laser light. Note that the laser beam may be irradiated from the substrate side as opposed to the case of FIG.

いずれの方法においても、接続部Cnの抵抗結合有機膜141の比抵抗を下げるために、接続部Cnの抵抗結合有機膜141の膜厚を薄くして、さらに、接続部Cnの抵抗結合有機膜141の表面積を大きくすることで有効な効果を奏する。なお、図13〜図21の実施形態では機能有機膜142と抵抗結合有機膜141を略同一のパターンとしても本発明の効果が発揮される。   In any method, in order to reduce the specific resistance of the resistive coupling organic film 141 in the connection portion Cn, the thickness of the resistive coupling organic film 141 in the connection portion Cn is reduced, and further, the resistive coupling organic film in the connection portion Cn. An effective effect is obtained by increasing the surface area of 141. In the embodiment of FIGS. 13 to 21, the effect of the present invention is exhibited even if the functional organic film 142 and the resistively coupled organic film 141 are formed in substantially the same pattern.

<実施例1>
実施例1として、パッシブ駆動型有機EL表示パネルを作製した。
<Example 1>
As Example 1, a passive drive organic EL display panel was produced.

図22に示すように、第1電極13として、ガラス基板10上に、ITO(インジウムスズ酸化物)を、スパッタ法とフォトエッチングにより、平行ストライプ状に4本形成した。   As shown in FIG. 22, as the first electrode 13, four ITO (indium tin oxide) were formed in parallel stripes on the glass substrate 10 by sputtering and photoetching.

図23に示すように、第1電極13に重ならないように、配線電極19として、Ti(50nm厚)/Al(200nm厚)/Ti(50nm厚)からなる多層の金属膜を、スパッタ法とフォトエッチングにより形成した。   As shown in FIG. 23, a multilayer metal film made of Ti (50 nm thick) / Al (200 nm thick) / Ti (50 nm thick) is used as a wiring electrode 19 so as not to overlap the first electrode 13 by sputtering. It was formed by photoetching.

図24に示すように、抵抗結合有機膜141として、ガラス基板10(第1電極13及び配線電極19)の略全面に、比抵抗103Ω・cmのPEDOTを100nm、スピンコートにより形成した。 As shown in FIG. 24, PEDOT having a specific resistance of 10 3 Ω · cm was formed by spin coating on the substantially entire surface of the glass substrate 10 (the first electrode 13 and the wiring electrode 19) as the resistive coupling organic film 141.

図25に示すように、機能有機膜142として、表示領域に対応する部分すなわち第1電極13の端部以外及び基板10上の抵抗結合有機膜141上に、TPD(50nm厚)/Alq3(600nm厚)/Li2O(1nm厚)の各膜を、マスク蒸着で形成した。 As shown in FIG. 25, as the functional organic film 142, TPD (50 nm thickness) / Alq 3 (on the portion other than the end portion of the first electrode 13 and the resistive coupling organic film 141 on the substrate 10 corresponding to the display region. Each film of 600 nm thickness) / Li 2 O (1 nm thickness) was formed by mask vapor deposition.

図26に示すように、第1電極13に直交な第2電極15として、Al(100nm厚)を、マスク蒸着で、平行ストライプ状に3本のパターンを形成した。   As shown in FIG. 26, as the second electrode 15 orthogonal to the first electrode 13, Al (100 nm thickness) was formed by mask vapor deposition to form three patterns in parallel stripes.

第2電極15のパターンをマスクにして、抵抗結合有機膜141をエッチングして、図27に示すように、配線電極19の一部を外部接続用に露出させ、接続部Cnを画定した。この際に、機能有機膜142も同時にエッチングされるが、発光部分ではないので、特に問題はない。エッチングは、例えば、真空プラズマを用いて行う。エッチングガスに酸素を用い、圧力を100Pa、パワーを1W/cm2程度にし、エッチングを10分間行えば、抵抗結合有機膜141を良好にエッチングできる。また、第2電極15へのダメージもほとんどなかった。 Using the pattern of the second electrode 15 as a mask, the resistive coupling organic film 141 was etched to expose a part of the wiring electrode 19 for external connection as shown in FIG. 27 to define the connection portion Cn. At this time, the functional organic film 142 is also etched at the same time, but there is no particular problem because it is not a light emitting portion. Etching is performed using, for example, vacuum plasma. If oxygen is used as the etching gas, the pressure is set to 100 Pa, the power is set to about 1 W / cm 2 , and the etching is performed for 10 minutes, the resistive coupling organic film 141 can be satisfactorily etched. Further, there was almost no damage to the second electrode 15.

最後に、接続部Cnの各々に、波長1064nmパルス幅20nsのYAGレーザを用いてレーザ照射を行って、図28に示すパッシブ駆動型有機EL表示パネルが得られた。   Finally, laser irradiation was performed on each of the connection portions Cn using a YAG laser having a wavelength of 1064 nm and a pulse width of 20 ns, and the passive drive organic EL display panel shown in FIG. 28 was obtained.

更に、背面側から封止処理などを行い、実施例1の有機EL表示パネルが完成した。接続部Cnの大きさは、0.1mm×0.1mmであり、接続部Cnの抵抗は、1Ω以下であった。   Furthermore, sealing processing etc. were performed from the back side, and the organic EL display panel of Example 1 was completed. The size of the connection part Cn was 0.1 mm × 0.1 mm, and the resistance of the connection part Cn was 1Ω or less.

上述した実施例においては、基板上の複数の第1電極と第2電極との交差する部分の有機機能層すなわち発光部からなる単純マトリクス表示タイプの有機EL表示パネルを説明したが、本発明はアクティブマトリクスタイプの表示パネルにも応用できる。   In the above-described embodiments, a simple matrix display type organic EL display panel composed of an organic functional layer, that is, a light emitting portion, at a portion where a plurality of first electrodes and second electrodes on a substrate intersect has been described. It can also be applied to active matrix display panels.

<比較例>
接続部Cnの各々にレーザ照射を行わない以外は、実施例1と全く同様にしてパッシブ駆動型有機EL表示パネルを作製したところ、接続部Cnの抵抗は、100Ω程度であった。
<Comparative example>
A passive drive organic EL display panel was fabricated in the same manner as in Example 1 except that each of the connection portions Cn was not irradiated with laser, and the resistance of the connection portion Cn was about 100Ω.

従来の有機EL表示パネルの概略部分断面図である。It is a general | schematic fragmentary sectional view of the conventional organic electroluminescence display panel. 本発明による実施形態の有機EL表示パネルの概略部分断面図である。It is a general | schematic fragmentary sectional view of the organic electroluminescent display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの有機EL素子の概略部分断面図である。It is a general | schematic fragmentary sectional view of the organic EL element of the organic EL display panel of embodiment by this invention. 本発明による実施形態の、複数の有機EL素子を備えた有機EL表示パネルの部分拡大背面図である。It is a partial expanded rear view of the organic electroluminescence display panel provided with the some organic electroluminescent element of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board | substrate in the manufacture process of the organic electroluminescence display panel of embodiment by this invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの概略部分断面図である。It is a general | schematic fragmentary sectional view of the organic electroluminescent display panel of other embodiment by this invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの製造過程における基板の部分断面図である。It is a fragmentary sectional view of the board in the manufacture process of the organic electroluminescence display panel of other embodiments by the present invention. 本発明による他の実施形態の有機EL表示パネルの概略部分断面図である。It is a general | schematic fragmentary sectional view of the organic electroluminescent display panel of other embodiment by this invention. 本発明による他の実施形態の有機EL表示パネルの概略部分断面図である。It is a general | schematic fragmentary sectional view of the organic electroluminescent display panel of other embodiment by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention. 本発明による実施例の有機EL表示パネルの製造過程における基板の平面図である。It is a top view of the board | substrate in the manufacture process of the organic electroluminescent display panel of the Example by this invention.

符号の説明Explanation of symbols

10 基板
13 第1電極
14 有機機能層
15 第2電極
16 封止膜
19 配線電極
141 抵抗結合有機膜
142 機能有機膜
DESCRIPTION OF SYMBOLS 10 Board | substrate 13 1st electrode 14 Organic functional layer 15 2nd electrode 16 Sealing film 19 Wiring electrode 141 Resistance coupling | bonding organic film 142 Functional organic film

Claims (12)

表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造の作製方法であって、
第1導電体膜を前記基板に形成する工程と、前記第1導電体膜上に中間導電体膜を形成する工程と、
前記中間導電体膜上に第2導電体膜を形成して前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた前記中間導電体膜の接続部とを画定する工程とを含み、
前記中間導電体膜は前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記中間導電体膜の接続部の電気抵抗値を前記第1材料の電気抵抗値よりも低くさせる低抵抗化処理工程とを含むことを特徴とする導電体膜接続構造の作製方法。
A method for producing a connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
Forming a first conductor film on the substrate; forming an intermediate conductor film on the first conductor film;
A second conductor film is formed on the intermediate conductor film, and an overlapping portion of the first conductor film and the second conductor film and a connection portion of the intermediate conductor film sandwiched between the overlapping portions are provided. Defining,
The intermediate conductor film is made of a first material having an electrical resistance value higher than the higher one of the first conductor film and the second conductor film,
A method of manufacturing a conductor film connection structure, comprising: a resistance reduction process step of lowering an electrical resistance value of a connection portion of the intermediate conductor film lower than an electrical resistance value of the first material.
前記低抵抗化処理工程は、前記中間導電体膜の接続部の第2導電体膜側に前記第1材料の比抵抗を低くさせる第2材料をドープする工程を含むことを特徴とする請求項1記載の導電体膜接続構造の作製方法。   The low resistance treatment step includes a step of doping a second material that lowers the specific resistance of the first material into the second conductor film side of the connection portion of the intermediate conductor film. A method for producing a conductor film connection structure according to 1. 前記第2材料をドープする工程は、中間導電体膜を形成後インクジェットノズルを用いて中間導電体膜にドーパントの溶液を塗布し乾燥する工程を含むことを特徴とする請求項2記載の導電体膜接続構造の作製方法。   3. The conductor according to claim 2, wherein the step of doping the second material includes a step of applying and drying a solution of the dopant on the intermediate conductor film using an inkjet nozzle after forming the intermediate conductor film. A method for manufacturing a membrane connection structure. 前記低抵抗化処理工程は、第1導電体膜及び中間導電体膜又は第2導電体膜及び中間導電体膜の少なくとも一つを形成する工程において、その表面に凹凸を形成する工程を含むことを特徴とする請求項1記載の導電体膜接続構造の作製方法。   The resistance reduction treatment step includes a step of forming irregularities on the surface in the step of forming at least one of the first conductor film and the intermediate conductor film or the second conductor film and the intermediate conductor film. The method for producing a conductor film connection structure according to claim 1. 前記低抵抗化処理工程は、中間導電体膜を形成後、接続部にレーザ光を照射し、中間導電体膜の表面に凹凸を形成する工程を含むことを特徴とする請求項1記載の導電体膜接続構造の作製方法。   The conductive process according to claim 1, wherein the low resistance treatment step includes a step of forming irregularities on the surface of the intermediate conductor film by irradiating the connection portion with laser light after forming the intermediate conductor film. Manufacturing method of body membrane connection structure. 前記低抵抗化処理工程は、第2導電体膜を形成後、接続部にレーザ光を照射し、第1導電体膜、第2導電体膜及び中間導電体膜を溶接する工程を含むことを特徴とする請求項1記載の導電体膜接続構造の作製方法。   The resistance reduction treatment step includes a step of irradiating the connection portion with laser light after forming the second conductor film and welding the first conductor film, the second conductor film, and the intermediate conductor film. The method for producing a conductor film connection structure according to claim 1, wherein: 前記第2導電体膜をマスクにして、前記中間導電体膜を前記第2導電体膜と略同一のパターンでエッチングする工程を含むことを特徴とする請求項1〜6のいずれかに記載の導電体膜接続構造の作製方法。   7. The method according to claim 1, further comprising: etching the intermediate conductor film in a pattern substantially the same as the second conductor film using the second conductor film as a mask. A manufacturing method of a conductor film connection structure. 前記中間導電体膜が無機物であることを特徴とする請求項1〜7のいずれかに記載の導電体膜接続構造の作製方法。   The method of manufacturing a conductor film connection structure according to claim 1, wherein the intermediate conductor film is an inorganic substance. 前記中間導電体膜が有機物であることを特徴とする請求項1〜7のいずれかに記載の導電体膜接続構造の作製方法。   The method of manufacturing a conductor film connection structure according to claim 1, wherein the intermediate conductor film is an organic substance. 表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜は前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、前記中間導電体膜の接続部の前記第2導電体膜側に前記第1材料の比抵抗を低くさせる第2材料がドープされていることを特徴とする導電体膜接続構造。
A connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
It consists of a connecting portion of the first conductive film and the second conductive film of the overlapping portion between the intermediate conductor film sandwiched between the overlapping portions, the intermediate conductor film of the first conductive film and the second It consists of the 1st material which has an electric resistance value higher than the electric resistance value of the higher one of the conductor films, and the specific resistance of the first material on the second conductor film side of the connecting portion of the intermediate conductor film Conductor film connection structure, characterized in that a second material for lowering is doped.
表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜の接続部は前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記中間導電体膜の接続部の第1導電体膜及び中間導電体膜又は第2導電体膜及び中間導電体膜の少なくとも一つの表面に粗面を有することを特徴とする導電体膜接続構造。
A connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
The consists of a connecting portion of the first conductive film and the intermediate conductor film sandwiched between the overlapping portion and the overlapping portion of the second conductive film, the connection portion of the intermediate conductor film of the first conductive film And a first material having an electric resistance value higher than the higher electric resistance value of the second conductor film,
A conductor film connection structure having a rough surface on at least one surface of the first conductor film and the intermediate conductor film or the second conductor film and the intermediate conductor film in the connecting portion of the intermediate conductor film .
表示パネルに含まれる基板に形成された第1導電体膜と第2導電体膜との接続構造であって、
前記第1導電体膜及び第2導電体膜の重なり部分と前記重なり部分間に挟まれた中間導電体膜の接続部とからなり、前記中間導電体膜の接続部は前記第1導電体膜及び第2導電体膜のいずれか高い方の電気抵抗値よりも高い電気抵抗値を有する第1材料からなり、
前記第1導電体膜及び第2導電体膜が前記中間導電体膜の接続部とともに溶接された溶接部分を含むことを特徴とする導電体膜接続構造。
A connection structure between a first conductor film and a second conductor film formed on a substrate included in a display panel,
The consists of a connecting portion of the first conductive film and the intermediate conductor film sandwiched between the overlapping portion and the overlapping portion of the second conductive film, the connection portion of the intermediate conductor film of the first conductive film And a first material having an electric resistance value higher than the higher electric resistance value of the second conductor film,
The conductor film connection structure, wherein the first conductor film and the second conductor film include a welded portion welded together with the connection portion of the intermediate conductor film.
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