JP4818977B2 - Fast atom beam source, fast atom beam emission method, and surface modification apparatus - Google Patents

Description

  The present invention relates to a fast atom beam source (FAB (Fast Atom Bombardment) or Saddle Field Source) that emits plasma by generating plasma, a fast atom beam emission method, and a surface treatment apparatus (for example, a fast atom beam source) Surface modification device).

  Atoms that have a much higher kinetic energy and directionality than atoms and molecules present in normal temperature atmospheres are called fast atom beams, and those that generate such fast atom beams are called fast atom beam sources. be called.

  High-speed atomic beam sources are mainly used for processing steps used in semiconductor manufacturing processes. Compared with ion beams, high-speed atomic beam sources are characterized by the fact that the workpiece is not charged, and can be used even when the target processing accuracy cannot be ensured by charging due to damage to the target due to charging or the characteristics of the target. can do.

  However, the conventional fast atomic beam source has a problem that the density of emitted atomic beams is difficult to be uniform. In order to solve this problem, Patent Document 1 discloses a technique in which the distribution of atoms emitted from a high-speed atomic beam source is made uniform.

  In Patent Document 1, a discharge electrode or a gas introduction electrode having a plurality of holes is provided in a discharge vessel that generates plasma, and the length or diameter of the holes is set differently depending on the position, and the distribution of emitted atoms is determined. A high-speed atomic beam source having a configuration designed to be uniform is described.

Japanese Patent No. 3363040

  However, the distance between the atomic beam source and the object may be inconsequential depending on the shape of the object to be processed, the size of the object compared to a chip such as a wafer, the case where the etching rate is improved, or the equipment configuration. In such a case, when high-speed atoms are irradiated, the density of atoms that collide with the object does not become uniform, the structure of the object does not match the design, and a defect occurs.

  Also, if the amount of treatment and the object change, the conventional method requires changing the structure of the atomic beam source, which is not economical.

  The present invention solves the above-mentioned conventional problems, and provides a fast atom beam source, a fast atom beam emission method, and a surface capable of providing a desired emission atom density distribution per unit time in a short time at a low cost. An object is to provide a reformer.

  In order to achieve the above object, the present invention is configured as follows.

According to the first aspect of the present invention, a cylindrical body that is partially opened, acts as a cathode, has an emission part capable of emitting atoms, and generates plasma inside,
A plurality of rod-shaped anodes arranged inside the cylindrical body;
A power source electrically connected to the anode, applying a voltage to the anode, generating the plasma in the cylindrical body, and emitting atoms from the emitting portion;
An anode driving part for displacing the anode with respect to the discharge part inside the cylindrical body ;
The anode driving section controls the, Bei and a control unit for displacing the anode of such or away close to a predetermined cycle with respect to the emission regions Ete,
In the state where the longitudinal axis directions of the plurality of rod-shaped anodes are substantially parallel to the emission part, and the emission part is inclined with respect to the surface of the target object from which the atoms are emitted, The plasma is generated inside the object to emit the atoms from the emission part, and at least the anode on the side close to the object among the plurality of rod-like anodes is displaced with respect to the emission part. Provide an atomic beam source.

According to a second aspect of the present invention, there is provided the atomic beam source according to the first aspect, further comprising a control device that controls the voltage applied from the power source to the anode in relation to the displacement of the anode. provide.

According to the third aspect of the present invention, the cylindrical body is used as a cathode, and a voltage is applied to an anode provided inside the cylindrical body to generate plasma inside the cylindrical body. acts as part is open cathode, as well as emit atoms from the discharge portion capable of releasing atom, the anode relative to the emitting portion inside of the tubular body causes displaced by the anode driver ,
A plurality of rod-shaped anodes are arranged as the anode, and the longitudinal axis directions of the plurality of rod-shaped anodes are substantially parallel to the emission portion, and the emission portion emits the atoms. In an inclined state with respect to the surface of the object, the plasma is generated inside the cylindrical body to emit the atoms from the emission part, and at least the object among the plurality of rod-shaped anodes An atomic beam emission method is provided in which the anode on the near side is displaced with respect to the emission part .
According to a fourth aspect of the present invention, the plasma is generated inside the cylindrical body by controlling the anode driving unit and displacing the anode at predetermined intervals with respect to the emitting unit. The atomic beam emission method according to the third aspect, in which the atoms are emitted from the emission part.

According to a fifth aspect of the present invention, in relation to the displacement of the anode, plasma is generated inside the cylindrical body while controlling the voltage applied to the anode from the power source, thereby opening the opening. An atomic beam emission method according to the third or fourth aspect, in which atoms are emitted from a part.

According to the sixth aspect of the present invention, in the surface modification device for modifying the surface of the object by discharging atoms to the object from an atomic beam source that has generated plasma inside the cylindrical body,
With respect to an axis perpendicular to the plane of the object placed on the mounting table, the emission center axis for emitting atoms in the atomic beam source is inclined and installed,
As the atomic beam source, there is provided a surface modification apparatus constituted by the atomic beam source according to the first or second aspect.

By the arrangement, inside plasma is generated by arranging the rod-shaped anode in the cylindrical body portion of the cathode which releases atoms, and can be displaced with this anode, release per optimal time unit to the object By displacing the anode in the cylindrical body so as to have an atomic density distribution and controlling the electron density in the discharge space, it becomes possible to ensure a desired processing capability.

  According to the present invention, a desired emission atom density distribution per unit time can be obtained in a short time at a low cost by displacing the anode inside the cylindrical body, which is the cathode, and controlling the electron density in the discharge space. In addition, in the surface modification apparatus, a good surface treatment can be performed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a perspective view of a fast atomic beam source for explaining the fast atomic beam source according to the first embodiment of the present invention. FIG. 1 is a perspective view showing a part of the fast atomic beam source. 1 is a rectangular parallelepiped cylindrical body in FIG. 1.) 2 is a plurality of rod-like anodes arranged parallel to each other inside the outer frame 1, and 3 is arranged outside the outer frame 1. DC high-voltage power supply, 4 is a discharge space inside the outer frame 1, 5 is an atomic emission part arranged on one surface of the outer frame 1 to connect the outside of the outer frame 1 and the discharge space 4, and 6 is arranged on one surface of the outer frame 1 The gas introduction portion 7 is an emitted atomic beam.

  In FIG. 1, an outer frame 1 of a fast atomic beam source is composed of a conductor connected to an insulator or ground, and a DC high voltage power source 3 is connected to a plurality of anodes 2 provided therein, For example, a voltage of 2 kV to 3 kV is applied to each of the plurality of anodes 2. In addition, an atomic emission portion 5 that is an opening connecting the outside and the discharge space 4 is provided on a part of the outer frame 1 (at least on a surface along a direction parallel to the axial direction of the anode 2, and in FIG. 1, an upper surface and a lower surface). It has been. The atom emitting portion 5 is electrically connected to the conductor portion of the outer frame 1 and both act as a cathode. The shape of the atom emitting portion 1 is generally a conductive plate having an infinite number of through holes. In FIG. 1, the atomic emission part 5 is provided with two upper and lower surfaces. However, in order to efficiently generate a high-speed atomic beam, it is preferable to use one of the upper and lower surfaces. As an example, the plurality of anodes 2 are disposed substantially parallel to each other with the same distance from the upper and lower atom emitting portions 5.

  Further, a gas introduction part for introducing a discharge gas from the outside of the outer frame 1 to a part of the outer frame 1 (on the left side surface orthogonal to the upper surface on which the atomic emission part 5 is arranged in FIG. 1). 6 is provided. It is desirable that the gas introduction unit 6 is arranged not only in this arrangement, but also in an optimum place where the plasma is stabilized according to the shape of the outer frame 1 and the shape and position of the anode 2. A gas supply device 70 is connected to the gas introduction unit 6, and under the control of the control device 100, a gas necessary for forming plasma from the gas supply device 70 passes through the gas introduction unit 6 in the outer frame 1. It is supplied to the internal discharge space 4.

  The shape of the outer frame 1 can be arbitrarily designed as long as the desired density of the atomic beam 7 can be obtained. In addition, the arrangement of the atomic emission portions 5 can be arbitrarily set in terms of the number of installation, direction, and location as long as the desired density of atomic beams 7 can be obtained. In the first embodiment, the position of the atom emitting portion 5 shown in FIG.

A gas that forms plasma, for example, Ar, N ₂ , He, H, O ₂ , H ₂ O, or the like is introduced into the discharge space 4 from the gas introduction unit 6 by the gas supply device 70, and the discharge space 4 is discharged by the decompression device 71. The plasma is formed in the discharge space 4 by applying a direct current voltage to the anode 2 from the direct current high voltage power source 3 with a pressure of about 100 Pa or less. The control device 100 controls the operation of the gas supply device 70, the decompression device 71, the DC high-voltage power supply 3, and the control unit 32 connected to the anode driving device 31 to form plasma in the discharge space 4. To.

  FIG. 2A is a schematic configuration diagram showing a surface modification device as an example of a surface treatment device equipped with the fast atomic beam source according to the first embodiment of the present invention, and 11 is a reaction chamber constituted by a reaction vessel. , 12 is one substrate that is a processing target, and is made of Si (silicon) as an example, and 13 is the other substrate that is a processing target, and is made of Si (silicon) as an example. The control device 100 includes a gas supply device 70, a decompression device 71, a DC high-voltage power supply 3, high-speed atomic beam sources 19 and 20 each having a control unit 32 connected to the anode drive device 31, and a bellows drive device 74. And the like, and the analysis result information from the mass analyzers 28 and 30 is input to form plasma in the discharge space 4 to modify the surface of the substrate.

  One substrate 12 is placed on the lower substrate table 14, and the other substrate 13 is fixed to the upper substrate table 15. An electrostatic chuck 16 is embedded in the upper substrate base 15, and the other substrate 13 is electrostatically attracted to the electrostatic chuck 16 by applying a voltage to the electrostatic chuck 16 by a voltage application device 73. The upper substrate base 15 is attached to the bellows 17 and can be moved up and down with respect to the reaction chamber 11. That is, the lower end of the bellows 17 is fixed to a ring-shaped fixing plate 17 c fixed to the upper surface of the reaction chamber 11, and the fixing plate 17 b is fixed to the upper end of the bellows 17. A support bar 17a is fixed to the fixed plate 17b through the fixed plate 17b. The lower portion of the support rod 17a penetrates the reaction chamber 11, and the upper substrate base 15 is fixed to the lower end. The bellows 17 is connected to a bellows driving device 74 such as an air pump. When the bellows driving device 74 is driven, the bellows 17 expands and contracts, and the support bar 17a is moved up and down by the fixing plate 17b. Can be moved up and down. That is, by moving the bellows 17 up and down, the upper substrate base 15 connected to the bellows 17 can be moved up and down, and the other substrate 13 whose surface facing each other is surface-modified is used as one substrate 12. Can be crimped to.

  18 is a vacuum exhaust port of the reaction chamber 11, 71 is a decompression device that vacuums the inside of the reaction chamber 11 to reduce the pressure, and 19 is a first high-speed atomic beam 7 that emits a high-speed atomic beam 7 for modifying one substrate 12. An atomic beam source (for example, the fast atom beam source of FIG. 1), 20 is a second fast atom beam source (for example, the fast atom beam of FIG. 1) that emits a fast atom beam 7 for modifying the other substrate 13. Source) and the fast atomic beam sources 19 and 20 are connected to gas supply pipes 21 and 22 and power supply wirings 23 and 24 for applying voltage to the anode 2, respectively. The gas supply pipes 21, 22 and the power supply wirings 23, 24 can maintain the degree of vacuum in the reaction chamber 11 by supply connectors 25, 26. Further, the support rod 17a can also maintain the degree of vacuum of the reaction chamber 11 by the seal 17d.

  27 is a mass spectrometric analysis for taking in an element emitted from the surface of one substrate 12 when the substrate surface of one substrate 12 is cleaned by the fast atom beam 7 irradiated from the first fast atom beam source 19. A mouth 28 is a mass analyzer connected to the mass analyzer 27. Reference numeral 29 denotes a mass for taking in the element released from the surface of the other substrate 13 when the substrate surface of the other substrate 13 is cleaned with the fast atom beam irradiated from the second fast atom beam source 20. An analysis port 30 is a mass spectrometer connected to the mass analysis port 29. Mass analysis is performed on the respective substrates 12 and 13 by the mass analyzers 29 and 30, and the cleaning operation is controlled by the control device 100 based on the information of the analysis results, whereby each of the substrates 12 and 13 is controlled. The desired cleaning can be performed.

  During operation in the high-speed atomic beam source and surface modification apparatus having the above-described configuration, when accelerated ions in the plasma collide with other ions, atoms, electrons, the inner wall of the outer frame of the discharge space 4, the anode 2, and the like. The atomized atoms pass through the atom emitting portion 5 to form an atomic beam 7. The density of atoms in the atomic beam 7 is greatly affected by the electron density between the atom emitting portion 5 and the anode 2 in the discharge space 4.

  As shown in FIGS. 3A and 3B, a plurality of anodes 2 are arranged at the same distance from the atomic emission part 5, and the surface of the atomic emission part 5 is arranged only on the upper side with respect to the outer frame 1. If the substrates 12 and 13 are arranged substantially in parallel, the distance between the respective points on the surfaces of the substrates 12 and 13 and the anode 2 is constant, so that usually the fast atomic beam sources 19 and 20 shown in FIG. The density of the emitted atoms, and hence the density of the atoms that collide with the surfaces of the substrates 12 and 13 are configured to be uniform and constant. 3B of FIG. 3B schematically shows plasma formed in the middle part of the two anodes 2. However, as shown in FIG. 5, as in the prior art, the fast atomic beam 7 is fastened to the substrate 12, 13 that is the object to be processed from the oblique direction while the position of the anode 2 is fixed in the outer frame 1. When irradiating from the radiation sources 19 and 20, the distance between the respective points on the surfaces of the substrates 12 and 13 and the anode 2 is not constant. It becomes uniform. In FIG. 5, the distance between the anode 2 located obliquely lower right of the fast atomic beam sources 19 and 20 and the surfaces of the substrates 12 and 13 is the shortest, and the atomic density per unit time is increased, while the fast atomic beam source is Since the distance between the anode 2 and the surfaces of the substrates 12 and 13 located obliquely above the left and right sides of the substrates 19 and 20 is the largest and the atomic density per unit time is low, the atomic density colliding with the surfaces of the substrates 12 and 13 is low. It is uniform.

  Therefore, as shown in FIG. 4A, when the position of the anode 2 in the discharge space 4 is brought closer to the outer frame 1 side as the cathode (for example, one end in the longitudinal direction of the anode 2 (the right end in FIG. 4A) is a fulcrum) As the other end portion (the left end portion in FIG. 4A) is brought closer to the outer frame 1 side which is a cathode, the kinetic energy of ions pulled from the anode 2 to the cathode is reduced. FIG. 4B schematically shows a plasma 45 formed to be inclined to the right in the middle of the two anodes 2 when only the left anode 2 of the two anodes 2 is displaced as shown in FIG. 4A. Show. 4C is formed by inclining to the left at the middle part of the two anodes 2 when only the left anode 2 of the two anodes 2 is displaced away from the cathode in the opposite direction to FIG. 4A. The plasma 45 is schematically shown. Moreover, the electrons which are periodically moving around the anode 2 are increased in collision with the wall of the outer frame 1 and the electron density is decreased as the distance between the anode 2 and the cathode is reduced. As a result, the number of atoms neutralized by collision is reduced and the emitted atom density is reduced.

  Therefore, as described later, by controlling the position of the anode 2 to be changed (controlling so that the anode 2 is displaced), the anode 2 can be graded so as to have a desired emission atom density per unit time. It becomes possible. That is, as shown in FIG. 6, the fast atomic beam 7 is irradiated from the fast atomic beam sources 19 and 20 onto the substrates 12 and 13 from an oblique direction, and the anode 2 is made uniform so that the atomic density colliding with the substrates 12 and 13 is uniform. By changing the position of, i.e., controlling the anode 2 to be displaced, uniform processing with the atomic beam 7 becomes possible.

  Specifically, as an example, a plurality of rod-like anodes 2 are arranged, and the longitudinal axis directions of the plurality of rod-like anodes 2 are respectively substantially parallel to the emission portion 5 and the emission portion 5. However, the plasma is generated inside the outer frame 1 in a state inclined with respect to the surfaces of the substrates 12 and 13 as an example of the target object to emit the atoms, and the atoms are emitted from the emission unit 5. At the same time, the anode 2 on the side far from the substrates 12 and 13 (the anode 2 on the upper left in FIG. 6) of the plurality of rod-like anodes 2 is displaced (for example, approached) with respect to the emitting portion 5. Then, a substantially uniform plasma 45 as shown in FIG. 3B can be formed between the anodes 2 and 2, and the density of atoms colliding with the surfaces of the substrates 12 and 13 by the high-speed atomic beam 7 can be made substantially uniform. .

  FIG. 7 to FIG. 9 are explanatory diagrams relating to an arrangement example of the anode in the first embodiment, a displacement operation thereof, and the like.

  In FIG. 7, reference numeral 31 a denotes an anode driving unit 31 that changes the distance between the anode 2 and the atom emitting unit 5 by making the rod-shaped anode 2 repetitively rotatable about the center of the anode 2 as a rotation axis. The anode drive unit 32a as an example receives input data set so as to obtain a desired atomic density distribution by the displacement of the anode 2, and sends a drive control signal for displacing the anode 2 to the anode drive unit 31a. It is a control unit as an example of the control unit 32 that outputs to the motor 81.

  The displacing operation of the anode 2 may not be oscillated with the center of the anode 2 as a fulcrum, but may be translated from side to side. The displacing operation of the anode 2 is an operation that does not hinder plasma discharge. Any operation is possible. For example, the displacement of the anode 2 includes a movement that simply moves away from the atom emitting portion 5, a movement that simply approaches, and a movement that moves toward and away from the atom emitting portion 5 around the plasma generation position. The movement of simply moving away from or simply moving toward the atomic emission unit 5 is easy to control because the movement is simple, and the atomic density distribution can be increased or decreased as a whole. On the other hand, in the case of the movement toward and away from the atomic emission portion 5 with the plasma generation position as the center, the other end portion with respect to the atomic density distribution on one end side in the longitudinal direction of the anode 2 The atomic density distribution on the side can be relatively increased or decreased, and the atomic density distribution can be partially increased or decreased.

  Although not specifically illustrated, the anode driving unit 31a is configured by an anode driving source such as a motor, a cylinder, or an electromagnet and a driving force transmission mechanism thereof. Specifically, as shown in FIGS. 2B and 2C, the anode driving unit 31 a transmits a rotational driving force into the reaction chamber 11 using a magnet from a driving source outside the reaction chamber 11. The anode 2 is displaced by a cam mechanism in the vicinity of the fast atomic beam sources 19 and 20. As an example, as shown in FIG. 2B, a motor 81 as an example of a drive source is disposed outside the reaction chamber 11. A coupling 82 is connected to the rotation shaft 81 a of the motor 81. The drive shaft 83 connected to the rotation shaft 81a of the motor 81 by the coupling 82 passes through the wall 11w of the reaction chamber 11 and is disposed so as to be rotatably supported by the bearing 90 with respect to the wall 11w. Yes. Reference numeral 91 denotes a seal for maintaining the reduced pressure state of the reaction chamber 11. N-pole and S-pole drive side magnets 84n and 84s are fixed to the cylindrical portion of the inner end portion of the outer frame 1 of the drive shaft 83. Around the N pole and S pole drive side magnets 84n and 84s, there is a gap between the N pole and S pole drive side magnets 84n and 84s, and the S pole and N pole driven magnet 85s are magnetically attracted. , 85n are fixed to the cylindrical portion of the outer end portion of the driven shaft 86, and the driven side magnets 85s, 85n are rotated simultaneously in response to the rotation of the driving side magnets 84n, 84s, thereby being non-contacting. The rotational force from the motor 81 can be transmitted to the driven shaft 86. As shown in FIG. 2C, an eccentric cam 87 is fixed to the inner end portion of the driven shaft 86, and the eccentric cam 87 rotates eccentrically around the rotation axis 86 r of the driven shaft 86 by the rotation of the driven shaft 86 ( (See FIG. 2D). A cam follower 88 connected to the anode 2 through the long hole 1p (see FIG. 2E) of the frame wall 1w of the outer frame 1 is urged against the eccentric cam 87 by the urging force of the spring 89. ing. The cam follower 88 moves up and down linearly along a guide shaft 89 g orthogonal to the rotation axis of the driven shaft 86. On the other hand, each anode 2 is supported by the outer frame 1 so that the center portion in the longitudinal direction can swing by an insulator support member 79, and one end of each anode 2 is connected to a connecting portion 88a such as a universal joint or a spherical bearing. Is connected to the cam follower 88 so that the anode 2 can swing with respect to the movement of the cam follower 88 with the insulator support member 79 as a fulcrum. As a result, as the cam follower 88 moves up and down, the anode 2 swings as shown in FIG. 7 with the insulator support member 79 as a fulcrum. If the place where the insulator 2 is supported by the insulator support member 79 is set at the center of the plasma generation position, the anode 2 swings around the center of the plasma generation position.

  Further, the control unit 32a connected to the anode driving unit 31a performs operation control such as stopping the anode driving unit 31a during the anode displacement driving, changing the driving speed, and the like, so that each posture of the anode 2 can be changed. The atomic density per unit time can be changed by changing the staying time and the like.

By performing the rocking operation of the anode as shown in FIG. 7, in the vicinity of the center of the axial direction of the atomic emission part of the cathode, as constant atomic density, raising or lowering the atomic density of the atomic emission portion end Can do.

  Next, in another example shown in FIG. 8, the distance between the anode 2 and the atom emitter 5 while maintaining the parallel state of the anode 2 and the atom emitter 5 instead of the swinging motion of FIG. 7. The atomic density is made variable by displacing the anode 2 along the vertical direction of FIG. 8 (the direction of the diameter of the anode 2 and the direction perpendicular to the surface of the atomic emission portion 5). As in the example shown in FIG. 7, the anode drive unit 31b as an example of the anode drive unit 31 can be configured by a motor, a cylinder, an electromagnet, or the like as an example of a drive source, and has the same configuration as the anode drive unit 31b. can do. Unlike FIG. 7, since the anode 2 simply moves in the vertical direction, a connecting portion 88 a such as a universal joint or a spherical bearing that allows the swing of the anode 2 is not necessary, and one end of the cam follower 88 is simply connected to the anode 2. It is only necessary to connect and fix them to each other, and the connection structure can be simplified. Similarly to the control unit 32a of FIG. 7, a control unit 32b, which is an example of the control unit 32, outputs a drive control signal for displacing the anode 2 to the anode drive unit 31b. The atomic density per unit time may be changed by changing the stay time of each posture of the anode 2 by performing operation control such as stopping or changing the operation speed.

By performing parallel movement of the anode 2 as shown in FIG. 8, it is possible to perform the atomic line emission density equalizing one gradient. More specifically, atomic beam emission having a gentle gradient density can be performed on the movable side with reference to the fixed electrode of the atom emission portion .

  Next, in still another example shown in FIG. 9, the anode 2 is moved along the lateral direction (in the diametric direction of the anode 2 and the atomic emission portion 5 while keeping the distance between the anode 2 and the atomic emission portion 5 constant). The atomic density is made variable by displacing along the surface. As in the example shown in FIGS. 7 and 8, the anode drive unit 31c as an example of the anode drive unit 31 can be configured by a motor, a cylinder, an electromagnet, or the like as an example of a drive source, and is similar to the anode drive unit 31b. It can be set as a simple structure. Unlike FIG. 7, since the anode 2 simply moves in the lateral direction, a connecting portion 88 a such as a universal joint or a spherical bearing that allows the anode 2 to swing is unnecessary, and one end of the cam follower 88 is simply connected to the anode 2. It is only necessary to connect and fix them to each other, and the connection structure can be simplified. Similarly to the control unit 32a of FIG. 7, the control unit 32c as an example of the control unit 32 that outputs a drive control signal for displacing the anode 2 to the anode drive unit 31c is stopped during the lateral movement operation. Alternatively, the atomic density per unit time may be changed by changing the staying time of each posture of the anode 2 by changing the operation speed.

By performing the lateral movement of the anode 2 as shown in FIG. 9, it is possible to perform the atomic line emission density equalizing one gradient. More specifically, it is possible to perform atomic beam emission with a sudden increase / decrease in density only at the end portion (movable electrode side) of the atomic emission portion almost uniformly.

  Next, FIG. 10 is a perspective view showing a part of the fast atomic beam source 40A according to the modification of the first embodiment shown in FIG. 1 in a cutaway manner. The outer frame 1 of the fast atomic beam source shown in FIG. In this modification, the outer frame 1A is formed into a cylindrical shape, and the atomic emission portion 5A is formed into a circular portion at the center of one circular end surface in the axial direction of the cylindrical outer frame 1A. The difference is that the introduction portion 6A is formed on the curved peripheral surface of the cylindrical outer frame 1A.

  According to the high-speed atomic beam source as shown in FIG. 10, the atomic beam emission can be performed on the object in a narrow range with a high atomic beam emission density.

  FIG. 11 is a perspective view showing a part of the outer frame 1A of the fast atomic beam source 40B for explaining the fast atomic beam source 40B according to the second embodiment of the present invention. In the following description, members corresponding to those described in the first embodiment and the like are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the second embodiment, the outer frame 1A of the high-speed atomic beam source 40B is formed in a cylindrical shape, and a ring-shaped anode 2B is used as the anode 2B installed inside, and the atomic emission portion 5B is illustrated corresponding to the ring-shaped anode 2B. This is different from the first embodiment in that the disk is larger than the ten atomic emission portions 5A and arranged on both end faces in the axial direction of the outer frame 1A.

  According to the fast atomic beam source as shown in FIG. 11, the atomic beam can be emitted in a wider range than the fast atom beam source of FIG.

  Further, FIGS. 12A to 14 are explanatory diagrams relating to an arrangement example of the anode 2B in the second embodiment, a displacement operation thereof, and the like.

  12A is a front view of the anode 2B, FIG. 12B is a side view showing the anode 2B and the drive control system in FIG. 12A, and 31d is repeated as indicated by a one-dot chain line with the center line of the ring-shaped anode 2B as an axis. An anode drive unit as an example of the anode drive unit 31 that changes the distance between the anode 2B and the atom emission unit 5B in FIG. 11 by enabling the rotation, and 32d indicates a drive control signal for displacing the anode 2B. It is a control part as an example of the control part 32 output to the drive part 31d.

Changed by the control unit 32d, or to stop the anode driver 31d in the drive, and to change the driving speed, by changing and residence time of each posture at the anode 2 B, the atom density per unit time Can be made.

By displacing the anode 2 in FIGS. 12A and 12B, it is possible to perform atomic beam emission having a symmetric density around the density of the center of the atom emitting portion (center of the circular anode).

  In the example shown in FIG. 13, the anode 2B is moved in the horizontal direction (the horizontal direction in FIG. 13) by the anode driving unit 31e as an example of the anode driving unit 31 while maintaining the parallel state of the anode 2B and the atomic emission unit 5B. The atomic density is made variable by displacing in the direction orthogonal to the axial direction of the outer frame 1A in FIG. Similar to the example shown in FIG. 12, the anode drive unit 31e outputs a drive control signal for displacing the anode 2B to the anode drive unit 31e, and the control unit 32e as an example of the control unit 32 performs a displacement operation. The atomic density per unit time may be changed by changing the staying time of each posture of the anode 2B by stopping or changing the displacement operation speed.

  By displacing the anode shown in FIG. 13, atomic beam emission can be performed in a state where the density of the portion close to the outer frame (cathode) is close to the anode.

  In the example shown in FIG. 14, while maintaining the distance between the anode 2B and the atomic emission unit 5 constant, the anode driving unit 31f as an example of the anode driving unit 31 moves the anode 2B in the vertical and horizontal directions in FIG. The atomic density is varied by displacing in an oblique direction. In this example as well, as in the example shown in FIG. 12, the anode 2B is being displaced by the controller 32f that outputs a drive control signal for displacing the anode 2B to the anode driver 31f. The atomic density per unit time may be changed by changing the staying time of each posture of the anode 2B by stopping the operation or changing the speed.

By displacing the anode shown in FIG. 14, when the anode 2 is smaller than the atomic emission portion (outer frame (cathode)), atomic beam emission with high atomic beam density can be locally performed. Therefore, it is suitable when it is desired to selectively emit atomic beams on the irradiation surface of the object.

  8 to 14, the respective drive units have the same structure as the drive unit 31 a in FIG. 7, and in each example, conversion of the transmission direction of the drive force is performed. If necessary, a known mechanism may be used as appropriate.

  The present invention is not limited to the above-described embodiments and modifications, and can be implemented in various aspects.

  For example, as another example of the displacement of the anodes 2 and 2B, the voltage applied to the anodes 2 and 2B is increased immediately before starting the displacement of the anodes 2 and 2B, and then the anodes 2 and 2B. It is also possible to carry out a displacement. By increasing the voltage in this way and then displacing the anodes 2 and 2B, it is possible to stabilize the plasma when the initial plasma is generated at the start of voltage application. Further, during the displacement operation of the anodes 2 and 2B, the displacement can be performed while raising and lowering the voltage applied to the anodes 2 and 2B. As described above, when the voltage is increased or decreased during the displacement operation of the anodes 2 and 2B, the voltage is increased when the interval between the plurality of anodes 2 and 2B is increased, and the voltage is increased when the interval between the plurality of anodes 2 and 2B is decreased. By reducing the value, the density of atomic beams per unit area emitted before the anode displacement and the density of atomic beams per unit area during and after the anode displacement can be kept substantially constant.

  In FIG. 2A, two fast atomic beam sources 19 and 20 are arranged, but only one fast atomic beam source 19 may be arranged. For example, as shown in FIG. 2F, it can be optimized when surface treatment such as cleaning of the surface of the substrate 12 is performed.

  If it is made like FIG. 2F, when it wants to wash | clean one side of one target object, it can be set as a simple apparatus structure.

Further, as a modification of the anodes 2 and 2B, if the anode closer to the substrate side among the plurality of anodes 2 and 2B is once moved away from the substrate side and then left as it is, the plasma may disappear. is there. Therefore, it is preferable to move the anodes 2 and 2B again to the original position or a position closer to the substrate than the original position. Therefore, it is preferable to perform such reciprocal movement of the anodes 2 and 2B every predetermined period. The displacement of the position is preferably about 1 cm at most.

Although it depends on the size of the atomic emission part (outer frame (cathode)) and the anode, if it is less than 1 cm, the plasma intensity becomes too strong and the anode and the cathode may be damaged. Is preferably about 1 cm.

  The target substrates 12 and 13 can be applied to a wafer of 4 to 12 inches at the wafer level. For example, in the case of a 6-inch wafer, a high-speed atomic beam source having a size of, for example, 190 mm × 280 mm × 100 mm can be used. In this case, the atomic emission part 5 is preferably about 20 cm × 20 cm.

  In addition to the one that applies the same voltage from a single power source to the plurality of anodes 2 and 2B, as shown as a modified example in FIGS. 15A and 15B, DC high-voltage power sources 3a and 3b are provided for each of the plurality of anodes 2 and 2B. Thus, the voltages may be independently applied to the respective anodes 2 from the DC high-voltage power supplies 3a and 3b. In this case, a different voltage can be applied to each of the anodes 2 and 2B. In FIG. 15A, the control device 100 controls the right anode 2 so that a voltage lower than that of the left anode 2 is applied from the DC high voltage power source 3b. Then, initially, as shown in FIG. 15A, plasma 45 is formed at a position closer to the right anode 2 than the left anode 2, and thereafter, from the left anode 2 to the right anode, as shown in FIG. 15B. Plasma 45 is formed toward 2. Thereby, many atomic beams 7 can be emitted on the side close to the anode 2 on the right side.

  By changing as shown in FIGS. 15A and 15B, the plasma can be moved to the anode 2 side in a stable state.

  Note that, in the present specification, it is described that atoms are emitted, but ions can also be emitted from plasma generated in the outer frame.

  In addition, it can be made to show the effect which each has by combining arbitrary embodiment or modification of the said various embodiment and modifications suitably.

  The present invention relates to materials processing such as sputtering, vapor deposition, etching, surface cleaning, and deposition in the field of semiconductor manufacturing process, MEMS (Micro Electro Mechanical System), room temperature bonding, etc. This is applied as a high-speed atomic beam source device, a high-speed atomic beam emission method and a surface modification device used in the field, and in particular, the distance between the processing surface and the high-speed atomic beam source due to an object with a large processing area and device configuration or processing characteristics This is effective when the value cannot be kept constant.

The perspective view which fractures | ruptures and shows a part of fast atom beam source for demonstrating the fast atom beam source which concerns on 1st Embodiment of this invention 1 is a schematic configuration diagram showing a surface modification apparatus equipped with a fast atom beam source according to a first embodiment of the present invention. Partial schematic configuration diagram of an example of an anode driving unit of the surface modification device Partial schematic configuration diagram of an example of an anode driving unit of the surface modification device It is the figure seen from the direction of arrow A in FIG. 2C, Comprising: The schematic block diagram of the cam part of an example of the anode drive part of the said surface modification apparatus It is the figure seen from the direction of arrow B in FIG. 2C, Comprising: The schematic block diagram of the elongate hole part of an example of the anode drive part of the said surface modification apparatus Schematic configuration diagram showing an example in which only one fast atomic beam source is arranged in the surface treatment apparatus equipped with the fast atomic beam source according to the first embodiment of the present invention. Explanatory diagram of the emission atom density distribution of the fast atom beam source (more specifically, the upper figure is the distribution of the emission atom density with respect to the position of the atom emission part, the lower figure is the side view of the fast atom beam source) Planar explanatory view of the atomic density distribution of the fast atom beam source in FIG. 3A Explanatory diagram of the emission atom density distribution of the fast atomic beam source in the first embodiment of the present invention when the anode is displaced (more specifically, the upper diagram is a graph of the distribution of the emission atom density with respect to the position of the atom emission part, (The side figure is a side view of a fast atomic beam source) In the fast atomic beam source of FIG. 4A, when only the left-hand anode of the two anodes is displaced as shown in FIG. 4A, the plasma formed in the middle portion of the two anodes is inclined to the right. Plane explanatory diagram of the atomic density distribution of the fast atomic beam source shown in Fig. FIG. 4 schematically shows plasma formed by tilting to the left in the middle of the two anodes when only the left anode of the two anodes is displaced away from the cathode in the opposite direction to FIG. 4A. , Plane explanatory diagram of the emission atom density distribution of a fast atom beam source Explanatory diagram of the density distribution of collision atoms on the object when the fast atomic beam source is irradiated obliquely as in the conventional arrangement (more specifically, the upper figure shows the state in which the target is irradiated with the fast atomic beam source. (Side view and lower figure are graphs of the distribution of emitted atom density with respect to the position of the atom emission part) Explanatory drawing of the collision atom density distribution to the target object when irradiating the fast atomic beam source from the oblique direction in the first embodiment (more specifically, the upper figure shows the state in which the target is irradiated with the fast atomic beam source. (Side view and lower figure are graphs of the distribution of emitted atom density with respect to the position of the atom emission part) Explanatory drawing which concerns on the example of arrangement | positioning of the anode in 1st Embodiment, its displacement operation | movement, etc. Explanatory drawing which concerns on another example of arrangement | positioning of the anode in 1st Embodiment, its displacement operation | movement, etc. Explanatory drawing which concerns on another example of arrangement | positioning of the anode in 1st Embodiment, its displacement operation | movement, etc. 1 is a perspective view showing a fast atomic beam source in a modification of the first embodiment shown in FIG. The perspective view which fractures | ruptures and shows a part of fast atom beam source for demonstrating the fast atom beam source which concerns on 2nd Embodiment of this invention Explanatory drawing which concerns on the example of arrangement | positioning of the anode in 2nd Embodiment, its displacement operation | movement, etc. Explanatory drawing which concerns on the example of arrangement | positioning of the anode etc. in 2nd Embodiment, its displacement operation | movement, etc. Explanatory drawing which concerns on the example of arrangement | positioning of the anode etc. in 2nd Embodiment, its displacement operation | movement, etc. Explanatory drawing which concerns on the example of arrangement | positioning of the anode etc. in 2nd Embodiment, its displacement operation | movement, etc. Planar explanatory diagram of the emission atom density distribution of the fast atomic beam source in a further modification of the first embodiment of the present invention Planar explanatory diagram of the emission atom density distribution of the fast atomic beam source in a further modification of the first embodiment of the present invention

1 Outer frame of high-speed atomic beam source (example of cylindrical body)
2 Anode 3 DC high voltage power supply 4 Discharge space 5 Atom emission part 6 Gas introduction part 7 Atom beam 11 Reaction chambers 12 and 13 Substrate (object to be processed)
14 Lower substrate base 15 Upper substrate base 19, 20 High-speed atomic beam source 31, 31a to 31f Anode drive unit 32, 32a to 32f Control unit 70 Gas supply device 71 Decompression device 73 Voltage application device 74 Bellows drive device 100 Control device

Claims (6)

A cylindrical body that is partially opened, acts as a cathode, has an emission part capable of emitting atoms, and generates plasma inside;
A plurality of rod-shaped anodes arranged inside the cylindrical body;
A power source electrically connected to the anode, applying a voltage to the anode, generating the plasma in the cylindrical body, and emitting atoms from the emitting portion;
An anode driving part for displacing the anode with respect to the discharge part inside the cylindrical body ;
The anode driving section controls the, Bei and a control unit for displacing the anode of such or away close to a predetermined cycle with respect to the emission regions Ete,
In the state where the longitudinal axis directions of the plurality of rod-shaped anodes are substantially parallel to the emission part, and the emission part is inclined with respect to the surface of the target object from which the atoms are emitted, The plasma is generated inside the object to emit the atoms from the emission part, and at least the anode on the side close to the object among the plurality of rod-like anodes is displaced with respect to the emission part. Atomic beam source. The atomic beam source according to claim 1, further comprising a control device that controls the voltage applied to the anode from the power source in relation to the displacement of the anode. The cylindrical body serves as a cathode, a voltage is applied to the anode provided inside the cylindrical body to generate plasma inside the cylindrical body, and a part of the cylindrical body is opened to act as a cathode And while discharging atoms from the discharge part capable of discharging atoms, the anode is displaced by the anode driving unit with respect to the discharge part inside the cylindrical body ,
A plurality of rod-shaped anodes are arranged as the anode, and the longitudinal axis directions of the plurality of rod-shaped anodes are substantially parallel to the emission portion, and the emission portion emits the atoms. In an inclined state with respect to the surface of the object, the plasma is generated inside the cylindrical body to emit the atoms from the emission part, and at least the object among the plurality of rod-shaped anodes An atomic beam emission method in which the anode on the near side is displaced with respect to the emission part . Controlling the anode driving unit to displace the anode at predetermined intervals with respect to the emitting unit, and generating the plasma inside the cylindrical body to emit the atoms from the emitting unit. Item 4. The atomic beam emission method according to Item 3 . In relation to the displacement of said anode, while controlling the voltage applied to the anode from the power source to generate plasma in the interior of the tubular member to emit atoms from the opening, according to claim 3 Or 4. The atomic beam emission method according to 4. In the surface modification device for modifying the surface of the object by discharging atoms to the object from an atomic beam source that generates plasma inside the cylindrical body,
With respect to an axis perpendicular to the plane of the object placed on the mounting table, the emission center axis for emitting atoms in the atomic beam source is inclined and installed,
The surface modification apparatus comprised by the atomic beam source of Claim 1 or 2 as said atomic beam source.

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