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JP4822774B2 - Board bonding method and mounting board - Google Patents
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JP4822774B2 - Board bonding method and mounting board - Google Patents

Board bonding method and mounting board Download PDF

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JP4822774B2
JP4822774B2 JP2005254224A JP2005254224A JP4822774B2 JP 4822774 B2 JP4822774 B2 JP 4822774B2 JP 2005254224 A JP2005254224 A JP 2005254224A JP 2005254224 A JP2005254224 A JP 2005254224A JP 4822774 B2 JP4822774 B2 JP 4822774B2
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electrode
substrate
bump material
foam
foaming agent
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JP2007067304A (en
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能彦 八木
内田  修
敏郎 久保田
大 山内
誠 今西
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/072Connecting or disconnecting of bump connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

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  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Combinations Of Printed Boards (AREA)
  • Wire Bonding (AREA)

Description

本発明は、フリップチップ実装などの基板接合方法に関するものである。   The present invention relates to a substrate bonding method such as flip chip mounting.

図8はフリップフロップ実装の工程を示している。
図8(c)に示すように半導体チップ1を基板2に実装する場合には、先ず、図8(a)に示すように半導体チップ1の端子部3にハンダボール4を形成し、次に図8(b)に示すように基板2の端子部5に、前記半導体チップ1を裏返してセットし、この状態で加熱して常温に戻すことによって前記ハンダボール4が溶融し凝固して実装が完了する。
FIG. 8 shows a flip-flop mounting process.
When the semiconductor chip 1 is mounted on the substrate 2 as shown in FIG. 8C, first, solder balls 4 are formed on the terminal portions 3 of the semiconductor chip 1 as shown in FIG. As shown in FIG. 8B, the semiconductor chip 1 is set upside down on the terminal portion 5 of the substrate 2, and the solder ball 4 is melted and solidified by heating in this state and returning to normal temperature. Complete.

また、図10(a)(b)に示すようにしてバンプを形成する特別な方法が知られている。先ず、図10(a)に示すように基板6のアルミ電極7の上に電気メッキによって加熱発泡性共析物8を作る。9は絶縁層,10は保護層である。その後の加熱工程によって加熱発泡性共析物8は、バンプ材料が溶融した時点で共析物が分解、またはガス化して、バンプ材料内にボイドを形成して、発泡によって図10(b)に示すように球状のバンプ電極11が形成されている。   Further, a special method for forming bumps as shown in FIGS. 10A and 10B is known. First, as shown in FIG. 10A, a heat foamable eutectoid 8 is formed on the aluminum electrode 7 of the substrate 6 by electroplating. 9 is an insulating layer and 10 is a protective layer. In the subsequent heating step, the heat foamable eutectoid 8 is decomposed or gasified when the bump material is melted to form voids in the bump material. As shown, a spherical bump electrode 11 is formed.

このようにしてボイド電極が作成された基板6は、図10(c)に示すように、実装すべき基板12を押し付けて加熱し、バンプ電極11を再溶融して接合している。
特開平4−186631号公報
As shown in FIG. 10C, the substrate 6 on which the void electrode is formed is pressed against the substrate 12 to be mounted and heated, and the bump electrode 11 is remelted and bonded.
JP-A-4-186663

図9(a)(b)に示すように半導体チップ1の端子部3のピッチが小さくなった場合には、隣接するハンダボールの間隔が少なくなって、図9(c)に示すように前記ハンダボール4を溶融し凝固させた場合には、ハンダブリッジによる実装不良個所(A)が発生する。   When the pitch of the terminal portions 3 of the semiconductor chip 1 is reduced as shown in FIGS. 9A and 9B, the interval between adjacent solder balls is reduced, and as shown in FIG. When the solder ball 4 is melted and solidified, a defective mounting portion (A) due to a solder bridge occurs.

そこで、前記ピッチが小さくなった場合には、図10に示した加熱発泡性共析物8を用いて適切な大きさのバンプを形成させることで実装不良個所(A)の発生を低減できるが、工程数の削減が要望されているのが現状である。   Therefore, when the pitch is reduced, it is possible to reduce the occurrence of defective mounting locations (A) by forming bumps of an appropriate size using the heat-foamable eutectoid 8 shown in FIG. Currently, there is a demand for a reduction in the number of processes.

また、従来の加熱発泡性共析物8が図10(b)のように発泡して球状に凝固した状態では、発泡することによってその中に分散しているバンプ材料の抵抗値が大きくなる問題がある。   Further, when the conventional heat-foamable eutectoid 8 is foamed and solidified into a spherical shape as shown in FIG. 10B, the resistance value of the bump material dispersed therein is increased by foaming. There is.

本発明は半導体チップの端子部のピッチが小さくてもハンダブリッジの発生を無くして実装の信頼性の向上を実現でき、しかも工程数を削減できる基板接合方法を提供することを目的とする。   SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate bonding method capable of improving the mounting reliability by eliminating the occurrence of solder bridges even when the pitch of terminal portions of a semiconductor chip is small, and reducing the number of steps.

また、さらに低抵抗での接続を実現できる基板接合方法を提供することを目的とする。   It is another object of the present invention to provide a substrate bonding method capable of realizing connection with a lower resistance.

本発明の請求項1記載の基板接合方法は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1,第2の基板を間隔を設けて対向させ、第1電極の上に供給されている発泡型バンプ材料を加熱処理して、前記発泡型バンプ材料を第2電極に接触するまで発泡させると共に、前記発泡型バンプ材料中のバンプ材料を溶融させて前記第1電極と前記第2電極とを接合することを特徴とする。 In the substrate bonding method according to the first aspect of the present invention, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, the first and second electrodes are connected . The foamed bump material supplied on the first electrode is heat-treated by causing the substrates to face each other at intervals, and the foamed bump material is foamed until it comes into contact with the second electrode. The bump material in the material is melted to join the first electrode and the second electrode .

本発明の請求項4記載の基板接合方法は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1電極に発泡型バンプ材料を供給し、第1電極と第2電極が前記発泡型バンプ材料を介して接触するように第1,第2の基板の一方の基板を他方の基板に載置し、前記発泡型バンプ材料を発泡させると共に、前記発泡型バンプ材料中のバンプ材料を溶融させて接合することを特徴とする。   In the substrate bonding method according to claim 4 of the present invention, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, the first electrode is foamed. Bump material is supplied, and one of the first and second substrates is placed on the other substrate so that the first electrode and the second electrode are in contact with each other via the foam bump material, and the foam bump The material is foamed, and the bump material in the foam bump material is melted and bonded.

本発明の請求項5記載の基板接合方法は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1電極に発泡型バンプ材料を供給し、第1電極と第2電極が前記発泡型バンプ材料を介して接触するように第1,第2の基板の一方の基板を他方の基板に載置し、発泡型バンプ材料を介して第1電極と第2電極を接触させた状態で前記発泡型バンプ材料を発泡させると共に両基板の間隔が大きくなる方向に相対移動させ、前記発泡型バンプ材料中のパンプ材料を溶融させて接合することを特徴とする。   In the substrate bonding method according to claim 5 of the present invention, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, the first electrode is foamed. A bump material is supplied, and one of the first and second substrates is placed on the other substrate so that the first electrode and the second electrode are in contact with each other via the foam bump material, and the foam bump material The foam-type bump material is foamed in a state where the first electrode and the second electrode are in contact with each other and moved relative to each other in the direction in which the distance between the two substrates is increased to melt the pump material in the foam-type bump material. It is characterized by joining.

本発明の請求項6記載の基板接合方法は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1の基板の第1電極の下層に発泡型バンプ材料を配置し、前記第1電極の孔から発泡した前記発泡型バンプ材料を前記第1電極の上に突出させ、前記第1電極の孔から突出させた前記発泡型バンプ材料を介して前記第1電極と第2電極を接触させると共に、前記発泡型バンプ材料中のパンプ材料を溶融させて前記第1電極と前記第2電極を接合することを特徴とする。 In the substrate bonding method according to claim 6 of the present invention, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, the lower layer of the first electrode is arranged a foam-type bump material, the foam-type bump material foamed through the hole of the first electrode is projected on the first electrode, wherein the foam which projects from the hole of the first electrode with contacting the first electrode and the second electrode through the die bump material, characterized by joining the foamable bump material in the first electrode and the second electrode by melting bump material.

本発明の請求項8記載の基板接合方法は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1の基板の第1電極の下層に発泡剤を配置し、前記発泡剤の上にバンプ材料を配置し、前記発泡剤を発泡させて前記第1電極の孔から前記バンプ材料を前記第1電極の上に突出させ、前記第1電極の孔から突出させた前記バンプ材料を介して前記第1電極と前記第2電極を接触させると共に、前記バンプ材料を溶融させて前記第1電極と前記第2電極を接合することを特徴とする。 In the substrate bonding method according to claim 8 of the present invention, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, A foaming agent is disposed on the lower layer of one electrode, a bump material is disposed on the foaming agent, and the foaming agent is foamed so that the bump material protrudes from the hole of the first electrode onto the first electrode. The first electrode and the second electrode are brought into contact with each other through the bump material protruding from the hole of the first electrode, and the bump material is melted to join the first electrode and the second electrode . It is characterized by that.

本発明の請求項9記載の実装基板は、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続して実装した実装基板であって、第1の基板の第1電極の下層に設けられた発泡型バンプ材料の収容部を有し、発泡して第1電極の孔から第1電極の上に突出した前記発泡型バンプ材料を介して第1電極と第2電極が接触すると共に、前記発泡型バンプ材料中のバンプ材料が溶融して前記第1電極と前記第2電極が接合されたことを特徴とする。 The mounting substrate according to claim 9 of the present invention is a mounting substrate in which the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps and mounted. The foamed bump material is provided in a lower layer of the first electrode of the first substrate, and the foamed bump material is foamed and protrudes from the hole of the first electrode above the first electrode. The first electrode and the second electrode are in contact with each other, and the bump material in the foamed bump material is melted to join the first electrode and the second electrode .

この基板接合方法によると、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1電極に発泡剤を供給し、前記発泡剤の外側をバンプ材料によって被覆し、前記発泡剤を発泡させて拡張した前記バンプ材料を介して第1電極と第2電極を接触させると共に、バンプ材料を溶融させて接合することによって、発泡剤とバンプ材料とが混じり合っているのではなく、発泡剤とバンプ材料の二層構造にしているため、半導体チップの端子部のピッチが小さくてもハンダブリッジの発生を無くして実装の信頼性の向上を実現でき、発泡剤の発泡によっても発泡剤の外側の面に沿ってバンプ材料による導電層が残されているため、低抵抗での接合が可能である。   According to this substrate bonding method, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by the bump, the foaming agent is supplied to the first electrode, and the foaming is performed. The outside of the agent is covered with a bump material, the first electrode and the second electrode are brought into contact with each other via the bump material expanded by expanding the foaming agent, and the bump material is melted and bonded to form a foaming agent. The bump material and the bump material are not mixed with each other, but the foaming agent and the bump material have a two-layer structure. Improvement can be realized, and the conductive layer made of the bump material is left along the outer surface of the foaming agent even by foaming of the foaming agent, so that bonding with low resistance is possible.

また、第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、第1電極に発泡型バンプ材料を供給し、第1,第2の基板を間隔を設けて対向させ、前記発泡型バンプ材料を発泡させて発泡したバンプ材料を介して第1電極と第2電極を接触させると共に、前記発泡型バンプ材料中のバンプ材料を溶融させて接合することによって、工程数を削減を実現できる。   Further, when the first electrode formed on the first substrate and the second electrode formed on the second substrate are connected by bumps, a foam bump material is supplied to the first electrode, and the first and second electrodes are supplied. The first electrode and the second electrode are brought into contact with each other through the foamed bump material by foaming the foam bump material, and the bump material in the foam bump material is melted. Thus, the number of processes can be reduced.

本発明の基板接合方法を具体的な各実施の形態に基づいて説明する。
(実施の形態1)
図1は本発明の基板接合方法による実装工程を示している。
The substrate bonding method of the present invention will be described based on specific embodiments.
(Embodiment 1)
FIG. 1 shows a mounting process according to the substrate bonding method of the present invention.

ここでは、図1(e)に示すように、第1の基板21に形成された第1電極22と、第2の基板23に形成された第2電極24とをバンプで接続する実装工程を示している。
図1(a)では、第1電極22の上にディスペンサ25によって加熱発泡性の発泡剤26を供給する。図1(b)では、紫外線を照射して発泡剤26の表面だけを固化させてスキン層27を形成する。発泡剤26は、通常のウレタンでは耐熱性、耐化学薬品性が悪く、使用できない。そこで、この実施の形態ならびに後述の実施の形態においては、発泡シリコーンを用いた。発泡シリコーンには、2種類のものがあって、一つは、加熱により発泡する材料をシリコンゴム中に添加して加熱して発泡させるものであり、もう一つは、2液混合型のもので、これは混ぜることによって発泡する。具体的には、発泡剤として炭酸水素ナトリウムをシリコーンに混ぜたものを使用した。この分解温度は120℃〜150℃であったので、発泡プロセスの温度も120℃〜150℃に設定した。
Here, as shown in FIG. 1E, a mounting step of connecting the first electrode 22 formed on the first substrate 21 and the second electrode 24 formed on the second substrate 23 with bumps is performed. Show.
In FIG. 1A, a heat-foamable foaming agent 26 is supplied onto the first electrode 22 by a dispenser 25. In FIG. 1B, the skin layer 27 is formed by irradiating ultraviolet rays to solidify only the surface of the foaming agent 26. The foaming agent 26 cannot be used with ordinary urethane because of its poor heat resistance and chemical resistance. Therefore, foamed silicone is used in this embodiment and the embodiments described later. There are two types of foamed silicone. One is to add a foaming material by heating into silicone rubber and heat it to foam. The other is a two-component mixed type. And this foams by mixing. Specifically, sodium hydrogen carbonate mixed with silicone was used as a foaming agent. Since this decomposition temperature was 120 ° C to 150 ° C, the temperature of the foaming process was also set to 120 ° C to 150 ° C.

図1(c)では、ディスペンサ28によってスキン層27の上にバンプ材料29を供給して発泡剤26を被覆する。バンプ材料29としては、この実施の形態ならびに後述の実施の形態においても、導電性ペーストを使用した。例えば、以下のものが使用できる。これ以外の導電ペーストを使用することもできる。ビスフェノールA型エポキシ樹脂100部、添加剤としてホウ酸トリブチルを6重量部、固体分散型潜在性硬化促進剤として“アミキュアPN−23”(味の素株式会社 商品名)15部を加えたもの、更に、ポリチオール化合物として“TMTP(トリメチロールプロバントリス(β−チオプロビオネート))”(淀化学社 商品名)80部を加え、万能混合機で十分に真空混合して樹脂組生物を調製し、樹脂組成物100重量部に対して導電性粒子として銀粉を400部を混合した導電性樹脂組成物を用いた。導電性粒子として、ナノ粒子の金属を含んでいるものを用いると、発泡剤が発泡して伸びた場合でも、粒子同士が均質に伸びて途切れにくい。導電性ペーストには、樹脂成分が含まれているので、発泡剤26が伸びても伸びることができる。   In FIG. 1C, the bump material 29 is supplied onto the skin layer 27 by the dispenser 28 to cover the foaming agent 26. As the bump material 29, a conductive paste was used also in this embodiment and the embodiments described later. For example, the following can be used. Other conductive pastes can also be used. 100 parts by weight of bisphenol A epoxy resin, 6 parts by weight of tributyl borate as an additive, 15 parts of “Amicure PN-23” (Ajinomoto Co., Inc., trade name) as a solid dispersion type latent curing accelerator, Add 80 parts of “TMTP (Trimethylol Probantris (β-thioprovionate))” (trade name of Sakai Chemical Co., Ltd.) as a polythiol compound, and thoroughly mix with a universal mixer to prepare a resin assemblage. A conductive resin composition in which 400 parts of silver powder was mixed as conductive particles with respect to 100 parts by weight of the product was used. When conductive particles containing nanoparticles are used, even when the foaming agent is expanded by foaming, the particles are uniformly stretched and hardly break. Since the conductive paste includes a resin component, the conductive paste can be extended even if the foaming agent 26 is extended.

このバンプ材料29の供給時には発泡剤26の表面にスキン層27が形成されているため、発泡剤26とバンプ材料29とは混じり合わない。
この状態で加熱処理することによって、発泡剤26が発泡してその体積が増加し、これに伴って発泡剤26の外側を覆っているバンプ材料29が拡張されて図1(d)に示すように球状のバンプ30ができあがる。
Since the skin layer 27 is formed on the surface of the foaming agent 26 when the bump material 29 is supplied, the foaming agent 26 and the bump material 29 are not mixed.
By performing the heat treatment in this state, the foaming agent 26 foams and its volume increases, and as a result, the bump material 29 covering the outside of the foaming agent 26 is expanded, as shown in FIG. A spherical bump 30 is formed.

図1(e)では、バンプ30に第2の基板23の第2電極24を押し当てて加熱処理することによって、バンプ材料29が再溶融して凝固し、第1電極22と第2電極24とがバンプ材料29によって接合している。   In FIG. 1E, the bump material 29 is remelted and solidified by pressing the second electrode 24 of the second substrate 23 against the bump 30 and heat-treating, and the first electrode 22 and the second electrode 24 are solidified. Are joined by the bump material 29.

この基板接合方法によると、20μm程度といった狭ピッチであっても、ブリッジなどによる接合不良もなく、良好な接合状態を得ることができた。さらに、発泡剤26とバンプ材料29とが混じり合っているのではなく、発泡剤26とバンプ材料29の二層構造にしているため、発泡剤26の発泡によっても発泡剤26の外側の面に沿ってバンプ材料29による導電層が残されているため、低抵抗での接合が可能である。   According to this substrate bonding method, even in a narrow pitch of about 20 μm, there was no bonding failure due to a bridge or the like, and a good bonding state could be obtained. Further, since the foaming agent 26 and the bump material 29 are not mixed with each other but have a two-layer structure of the foaming agent 26 and the bump material 29, the foaming agent 26 is foamed to the outer surface of the foaming agent 26. A conductive layer made of the bump material 29 is left along, and bonding with low resistance is possible.

なお、図1(a)ではディスペンサ25によって発泡剤26を第1の電極21の上に配置したが、ディスペンサ25によらずに印刷またはインクジェットヘッドを用いて第1の電極21の上に発泡剤26を配置することもできる。   In FIG. 1A, the foaming agent 26 is disposed on the first electrode 21 by the dispenser 25. However, the foaming agent is formed on the first electrode 21 by using a printing or inkjet head without using the dispenser 25. 26 can also be arranged.

(実施の形態2)
図2は本発明の基板接合方法による実装工程を示し、(実施の形態1)と同じように発泡剤26とバンプ材料29の二層構造のバンプを用いており、図2(a)〜図2(c)の工程は、図1(a)〜図1(c)の工程と同じである。(実施の形態1)では、図1(d)で発泡剤26を発泡させた後に、図1(d)でバンプ材料29を再溶融させて第1電極22と第2電極24を接合したが、この(実施の形態2)では、図2(d)では発泡剤26を発泡させる前に、第1,第2の基板21,23を間隔を設けて対向させ、図2(e)で加熱処理して発泡剤26を発泡させるとともに、温度を上昇させてバンプ材料29を溶融させて接合する点が異なっており、図1(d)で発泡させるためだけに加熱処理し、次工程でバンプ材料29の再溶融を実施する場合に比べて、図2(e)では発泡剤26の発泡とバンプ材料29の再溶融を同一工程で実施しているため、工程数を削減できる。
(Embodiment 2)
FIG. 2 shows a mounting process according to the substrate bonding method of the present invention, and a bump having a two-layer structure of a foaming agent 26 and a bump material 29 is used as in (Embodiment 1). The process of 2 (c) is the same as the process of FIGS. 1 (a) to 1 (c). In the first embodiment, after the foaming agent 26 is foamed in FIG. 1D, the bump material 29 is remelted in FIG. 1D to join the first electrode 22 and the second electrode 24 together. In this (Embodiment 2), before foaming the foaming agent 26 in FIG. 2 (d), the first and second substrates 21 and 23 are opposed to each other at an interval, and heating is performed in FIG. 2 (e). The difference is that the foaming agent 26 is foamed by the treatment and the bump material 29 is melted and joined by raising the temperature, and the heat treatment is performed only for foaming in FIG. Compared to the case where the material 29 is remelted, in FIG. 2E, the foaming agent 26 and the bump material 29 are remelted in the same process, so the number of processes can be reduced.

なお、(実施の形態2)では発泡剤26とバンプ材料29の二層構造のバンプを用いたが、発泡剤26とバンプ材料29とが混じり合ったバンプの場合であっても、工程数の削減効果は得られる。   In (Embodiment 2), the two-layered bump of the foaming agent 26 and the bump material 29 is used. However, even in the case of the bump in which the foaming agent 26 and the bump material 29 are mixed, the number of steps Reduction effect is obtained.

(実施の形態3)
図3は本発明の基板接合方法による実装工程を示し、(実施の形態2)と同じように発泡剤26とバンプ材料29の二層構造のバンプを用いており、図3(a)〜図3(c)の工程は、図1(a)〜図1(c)の工程と同じである。
(Embodiment 3)
FIG. 3 shows a mounting process according to the substrate bonding method of the present invention, and a bump having a two-layer structure of a foaming agent 26 and a bump material 29 is used as in (Embodiment 2). The process of 3 (c) is the same as the process of FIGS. 1 (a) to 1 (c).

(実施の形態2)では、第1,第2の基板21,23を間隔を設けて対向させ、発泡剤26が発泡して大きくなってくるのを待ち受けていたが、この(実施の形態3)では、図3(d)では第2の基板23を、発泡剤26を発泡させる前のバンプ30の上に載置し、次に、加熱処理して発泡剤26を発泡させる。発泡剤26の発泡に伴って第2の基板23が図3(e)まで持ち上げられて、温度を上昇させてバンプ材料29を溶融させて接合する。   In (Embodiment 2), the first and second substrates 21 and 23 are opposed to each other with a gap therebetween, and the foaming agent 26 is waiting for foaming to become large. In FIG. 3D, the second substrate 23 is placed on the bump 30 before foaming the foaming agent 26, and then the foaming agent 26 is foamed by heat treatment. As the foaming agent 26 foams, the second substrate 23 is lifted up to FIG. 3E, and the bump material 29 is melted and bonded by raising the temperature.

(実施の形態4)
図4は本発明の基板接合方法による実装工程を示し、(実施の形態2)と同じように発泡剤26とバンプ材料29の二層構造のバンプを用いており、図4(a)〜図4(c)の工程は、図1(a)〜図1(c)の工程と同じである。
(Embodiment 4)
FIG. 4 shows a mounting process according to the substrate bonding method of the present invention, and a bump having a two-layer structure of a foaming agent 26 and a bump material 29 is used as in (Embodiment 2). The process of 4 (c) is the same as the process of FIG. 1 (a)-FIG.1 (c).

(実施の形態2)では、第1,第2の基板21,23を間隔を設けて対向させ、発泡剤26が発泡して大きくなるのを待ち受けていたが、この(実施の形態4)の図4(d)では、第2の基板23の第2電極24を、発泡剤26を発泡させる前のバンプ30に接触またはその近傍位置に配置し、次に、加熱処理して発泡剤26を発泡させるとともに、発泡剤26の発泡に伴って第2の基板23を図4(e)を経て図4(f)に示す位置まで次第に第1の基板21から離間させる。さらに詳しくは、発泡する発泡剤26は第2の基板23の第2電極24に接触しながら発泡するように第2の基板23を第1の基板21から離間させることによって、バンプ30の形状を第1の電極21と第2電極24の範囲内で発泡して大きくなるように制御することができ、狭ピッチ化の場合であっても、隣接した電極とのハンダブリッジによる実装不良個所(A)の発生を低減するのに有効である。   In (Embodiment 2), the first and second substrates 21 and 23 are opposed to each other with a gap therebetween, and the foaming agent 26 waits for foaming to become large, but this (Embodiment 4) In FIG. 4D, the second electrode 24 of the second substrate 23 is placed in contact with or in the vicinity of the bump 30 before foaming the foaming agent 26, and then subjected to heat treatment to remove the foaming agent 26. In addition to foaming, the second substrate 23 is gradually separated from the first substrate 21 to the position shown in FIG. 4F through FIG. More specifically, the shape of the bump 30 is changed by separating the second substrate 23 from the first substrate 21 so that the foaming foaming agent 26 foams while contacting the second electrode 24 of the second substrate 23. In the range of the first electrode 21 and the second electrode 24, it can be controlled so as to be foamed and enlarged, and even in the case of a narrow pitch, a mounting failure portion (A This is effective in reducing the occurrence of).

なお、ここでは第1の基板21に対して第2の基板23を上昇させたが、第2の基板23に対して第1の基板21を下降させたり、第1の電極21と第2電極24の間隔が発泡剤26の発泡に伴って大きくなるように、第1の基板21と第2の基板23を相対移動させても実現できる。   Here, the second substrate 23 is raised with respect to the first substrate 21, but the first substrate 21 is lowered with respect to the second substrate 23, or the first electrode 21 and the second electrode This can also be realized by moving the first substrate 21 and the second substrate 23 relative to each other so that the interval of 24 increases as the foaming agent 26 foams.

(実施の形態5)
図5は本発明の基板接合方法による実装工程を示す。
上記の各実施の形態では、第1の電極22の上に配置したパンプ30が発泡材26の発泡によって大きくなったが、この(実施の形態5)では、第1の基板21の内部、詳しくは、第1の電極22の下側に発泡剤26とバンプ材料29とが混じり合ったバンプ30Aが配設されている。
(Embodiment 5)
FIG. 5 shows a mounting process according to the substrate bonding method of the present invention.
In each of the above embodiments, the pump 30 disposed on the first electrode 22 is enlarged by the foaming of the foam material 26. In this (Embodiment 5), the inside of the first substrate 21 is described in detail. The bump 30 </ b> A in which the foaming agent 26 and the bump material 29 are mixed is disposed below the first electrode 22.

図5(a)〜図5(d)は第1の基板21の作成工程を示している。
ここで第1の基板21は、基板下部31と、基板下部31に張り合わされる基板上部32とで構成されている。基板上部32には第1の電極22が設けられている。また、基板下部31には第1の電極22の位置に対応して凹部33が形成されている。
FIG. 5A to FIG. 5D show a process for forming the first substrate 21.
Here, the first substrate 21 includes a substrate lower portion 31 and a substrate upper portion 32 bonded to the substrate lower portion 31. A first electrode 22 is provided on the upper portion 32 of the substrate. A concave portion 33 is formed in the lower portion 31 of the substrate corresponding to the position of the first electrode 22.

図5(a)では、基板下部31の凹部33に、発泡剤26とバンプ材料29とが混じり合ったバンプ30Aをディスペンサで供給する。
図5(b)と図5(c)では、第1の電極22から基板上部32に達する貫通孔34をレーザー加工で形成した後に、前記図5(a)でバンプ30Aが供給済みの基板下部31に基板上部32を図5(d)に示すように貼り付ける。
In FIG. 5A, the bump 30A in which the foaming agent 26 and the bump material 29 are mixed is supplied to the concave portion 33 of the substrate lower portion 31 by a dispenser.
5 (b) and 5 (c), a through hole 34 reaching the substrate upper part 32 from the first electrode 22 is formed by laser processing, and then the lower part of the substrate to which the bump 30A has been supplied in FIG. A substrate upper part 32 is attached to 31 as shown in FIG.

図5(e)では、図5(d)のように貼り付けた第1の基板21を加熱プレート35に載置して加熱する。この加熱によってバンプ30Aに混入されている発泡剤26が発泡してバンプ30Aの体積が増加し、貫通孔34を介して図5(f)に示すように第1の電極22の上部にバンプ30Aが突出する。   5E, the first substrate 21 attached as shown in FIG. 5D is placed on the heating plate 35 and heated. By this heating, the foaming agent 26 mixed in the bump 30A is foamed and the volume of the bump 30A is increased, and the bump 30A is formed on the first electrode 22 via the through hole 34 as shown in FIG. Protrudes.

図5(g)では第2の基板23を、第1の電極22の上部に突出したバンプ30Aの上に載置する。そして、前記加熱プレート35の温度をバンプ材料29が再溶融する温度に昇温した後に固化する温度にまで降温することによって、第1の電極22と第2の電極24が接合される。   In FIG. 5G, the second substrate 23 is placed on the bumps 30 </ b> A protruding above the first electrode 22. The first electrode 22 and the second electrode 24 are joined by lowering the temperature of the heating plate 35 to a temperature at which the bump material 29 is remelted and then solidified.

このように、発泡したバンプ30Aの出口を貫通孔34によって積極的に狭めため、バンプ30Aが僅かであっても第1の電極22の上部に大きく突出させることができ、狭ピッチのために接合個所の1個所あたりのバンプ30Aを多くできない場合であっても、確実な接合状態を得ることができる。   In this way, since the outlet of the foamed bump 30A is actively narrowed by the through hole 34, even if the bump 30A is small, the bump 30A can be protruded largely to the upper part of the first electrode 22, and bonding is performed due to the narrow pitch. Even when the number of bumps 30A per location cannot be increased, a reliable bonding state can be obtained.

(実施の形態6)
図6は本発明の基板接合方法による実装工程を示し、図6(a)〜図6(f)の工程は、(実施の形態5)の図5(a)〜図5(f)の工程と同じである。
(Embodiment 6)
FIG. 6 shows a mounting process according to the substrate bonding method of the present invention, and the processes of FIGS. 6A to 6F are the processes of FIGS. 5A to 5F of the fifth embodiment. Is the same.

(実施の形態5)では第2の基板23を第1の電極22の上部に突出したバンプ30Aの上に載置したが、この(実施の形態6)の図6(g)では、第2の基板23の第2電極24を、バンプ30に接触またはその近傍位置に配置し、発泡途中のバンプ30Aに接触させた後に、発泡剤26の発泡に伴って第2の基板23を次第に図6(h)の状態を経て最終的な図6(i)の状態に第1の基板21から離間させる。さらに詳しくは、発泡して第1の電極22の上部に突出してくるバンプ30Aが、第2の基板23の第2電極24に接触しながら発泡するように第2の基板23を第1の基板21から図6(i)に示す位置まで離間させることによって、バンプ30Aの形状を第1の電極21と第2電極24の範囲内で大きく突出するように制御することができ、そしてバンプ30Aを再溶融して固化させることによって、狭ピッチ化の場合であっても、隣接した電極とのハンダブリッジによる実装不良個所(A)の発生を低減するのに有効である。   In (Embodiment 5), the second substrate 23 is placed on the bump 30A protruding above the first electrode 22. In FIG. 6 (g) of this (Embodiment 6), the second substrate 23 is placed. After the second electrode 24 of the substrate 23 is placed in contact with or near the bump 30 and brought into contact with the bump 30A in the middle of foaming, the second substrate 23 is gradually moved along with the foaming of the foaming agent 26 as shown in FIG. After the state of (h), it is separated from the first substrate 21 to the final state of FIG. 6 (i). More specifically, the second substrate 23 is made to foam so that the bumps 30 </ b> A that foam and protrude above the first electrode 22 foam while contacting the second electrode 24 of the second substrate 23. By separating from 21 to the position shown in FIG. 6 (i), the shape of the bump 30A can be controlled so as to protrude largely within the range of the first electrode 21 and the second electrode 24. Remelting and solidifying is effective in reducing the occurrence of defective mounting locations (A) due to solder bridges with adjacent electrodes, even in the case of narrowing the pitch.

なお、ここでは第1の基板21に対して第2の基板23を上昇させたが、第2の基板23に対して第1の基板21を下降させたり、第1の電極21と第2電極24の間隔がバンプ30Aの突出に伴って大きくなるように、第1の基板21と第2の基板23を相対移動させても実現できる。   Here, the second substrate 23 is raised with respect to the first substrate 21, but the first substrate 21 is lowered with respect to the second substrate 23, or the first electrode 21 and the second electrode This can also be realized by moving the first substrate 21 and the second substrate 23 relative to each other so that the interval 24 increases with the protrusion of the bump 30A.

(実施の形態7)
図7は本発明の基板接合方法による実装工程を示す。
上記の(実施の形態5)ではバンプ30Aとして、発泡剤26とバンプ材料29とが混じり合った物を使用したが、この(実施の形態7)では発泡剤26とバンプ材料29の二層構造のバンプ30Bを用いている点だけが異なっている。
(Embodiment 7)
FIG. 7 shows a mounting process according to the substrate bonding method of the present invention.
In the above (Embodiment 5), a material in which the foaming agent 26 and the bump material 29 are mixed is used as the bump 30A. In this (Embodiment 7), a two-layer structure of the foaming agent 26 and the bump material 29 is used. The only difference is that the bump 30B is used.

図7(a)では、基板下部31の凹部33に、発泡剤26をディスペンサ25で供給する。
図7(b)では、さらに発泡剤26の上にバンプ材料29をディスペンサ28で供給する。なお、バンプ材料29の供給に際しては、必要に応じて発泡剤26の表面に紫外線を照射してスキン層を形成しておく。
In FIG. 7A, the foaming agent 26 is supplied by the dispenser 25 to the concave portion 33 of the substrate lower portion 31.
In FIG. 7B, the bump material 29 is further supplied onto the foaming agent 26 by the dispenser 28. When supplying the bump material 29, the surface of the foaming agent 26 is irradiated with ultraviolet rays as necessary to form a skin layer.

図7(c)と図7(d)では、第1の電極22から基板上部32に達する貫通孔34をレーザー加工で形成した後に、前記図7(a)でバンプ30Bが供給済みの基板下部31に基板上部32を図7(d)に示すように貼り付ける。   In FIG. 7C and FIG. 7D, a through hole 34 reaching the substrate upper part 32 from the first electrode 22 is formed by laser processing, and then the lower part of the substrate to which the bump 30B has been supplied in FIG. 7A. A substrate upper part 32 is attached to 31 as shown in FIG.

図7(e)では、図7(d)のように貼り付けた第1の基板21を加熱プレート35に載置して加熱する。この加熱によってバンプ30Bの発泡剤26が発泡してバンプ30Bの体積が増加し、貫通孔34を介して図7(f)に示すように第1の電極22の上部にバンプ30Bが突出する。   7E, the first substrate 21 attached as shown in FIG. 7D is placed on the heating plate 35 and heated. By this heating, the foaming agent 26 of the bumps 30B is foamed to increase the volume of the bumps 30B, and the bumps 30B protrude above the first electrodes 22 through the through holes 34 as shown in FIG.

図7(g)では第2の基板23を、第1の電極22の上部に突出したバンプ30Bの上に載置する。そして、前記加熱プレート35の温度をバンプ材料29が再溶融する温度に昇温した後に固化する温度にまで降温することによって、第1の電極22と第2の電極24が接合される。   In FIG. 7G, the second substrate 23 is placed on the bumps 30 </ b> B that protrude above the first electrodes 22. The first electrode 22 and the second electrode 24 are joined by lowering the temperature of the heating plate 35 to a temperature at which the bump material 29 is remelted and then solidified.

このように、発泡したバンプ30Bの出口を貫通孔34によって積極的に狭めため、バンプ30Bが僅かであっても第1の電極22の上部に大きく突出させることができ、狭ピッチのために接合個所の1個所あたりのバンプ30Bを多くできない場合であっても、確実な接合状態を得ることができる。   In this way, since the outlet of the foamed bump 30B is actively narrowed by the through-hole 34, even if the bump 30B is small, the bump 30B can be protruded largely to the upper part of the first electrode 22, and the bonding is performed due to the narrow pitch. Even when the number of bumps 30B per location cannot be increased, a reliable bonding state can be obtained.

さらに、発泡剤26とバンプ材料29とが混じり合っているのではなく、発泡剤26とバンプ材料29の二層構造にしているため、発泡剤26の発泡によっても発泡剤26の外側の面に沿ってバンプ材料29による導電層が残されているため、低抵抗での接合が可能である。   Further, since the foaming agent 26 and the bump material 29 are not mixed with each other but have a two-layer structure of the foaming agent 26 and the bump material 29, the foaming agent 26 is foamed to the outer surface of the foaming agent 26. A conductive layer made of the bump material 29 is left along, and bonding with low resistance is possible.

なお、ディスペンサによって発泡剤26,バンプ材料29を供給したが、印刷またはインクジェットヘッドを用いて第1の電極21の上に発泡剤26,バンプ材料29を配置することもできる。   Although the foaming agent 26 and the bump material 29 are supplied by the dispenser, the foaming agent 26 and the bump material 29 can be disposed on the first electrode 21 using printing or an inkjet head.

さらに、この(実施の形態7)の図7(g)と図7(h)における第1,第2の基板21,23の間隔の処理は、図6(g)と図6(h)の場合と同じように、第1の電極21と第2電極24の間隔がバンプ30Bの突出に伴って大きくなるように、第1の基板21と第2の基板23を相対移動させても実現できる。   Further, the processing of the distance between the first and second substrates 21 and 23 in FIG. 7G and FIG. 7H in this (Embodiment 7) is as shown in FIG. 6G and FIG. As in the case, the first substrate 21 and the second substrate 23 can be moved relative to each other so that the distance between the first electrode 21 and the second electrode 24 increases as the bump 30B protrudes. .

上記の(実施の形態5)〜(実施の形態7)では、加熱処理によってバンプ30Bを第1の電極22の上部に突出させてから、第1の基板21に第2の基板23を対向させたが、第1の基板21に第2の基板23を対向させた状態にしてから加熱処理によってバンプ30Bを第1の電極22の上部に突出させて接合することもできる。   In the above (Embodiment 5) to (Embodiment 7), the bump 30B is protruded above the first electrode 22 by heat treatment, and then the second substrate 23 is opposed to the first substrate 21. However, after the second substrate 23 is opposed to the first substrate 21, the bumps 30 </ b> B may be protruded and bonded to the upper portion of the first electrode 22 by heat treatment.

本発明は各種電子機器の実装の高密度化を実現して、電気機器の小型化に寄与できる。   The present invention can realize high-density mounting of various electronic devices and contribute to miniaturization of electric devices.

本発明の(実施の形態1)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 1) of this invention 本発明の(実施の形態2)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 2) of this invention 本発明の(実施の形態3)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 3) of this invention 本発明の(実施の形態4)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 4) of this invention 本発明の(実施の形態5)の半導体実装方法の工程図Process drawing of the semiconductor mounting method of (Embodiment 5) of this invention 本発明の(実施の形態6)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 6) of this invention 本発明の(実施の形態7)の半導体実装方法の工程図Process drawing of semiconductor mounting method of (Embodiment 7) of this invention 従来のハンダボールを使用した実装方法の工程図Process diagram of conventional mounting method using solder balls 同従来例の実装方法で狭隣接の場合の工程図Process diagram in the case of narrow adjacent by the mounting method of the conventional example 別の従来例の半導体実装方法の工程図Process diagram of another conventional semiconductor mounting method

符号の説明Explanation of symbols

21 第1の基板
22 第1電極
23 第2の基板
24 第2電極
26 加熱発泡性の発泡剤
27 スキン層
29 バンプ材料
30 球状のバンプ
30A 発泡剤26とバンプ材料29とが混じり合ったバンプ
30B 発泡剤26とバンプ材料29の二層構造のバンプ
31 基板下部
32 基板上部
33 凹部
34 貫通孔
21 First substrate 22 First electrode 23 Second substrate 24 Second electrode 26 Heat-foamable foaming agent 27 Skin layer 29 Bump material 30 Spherical bump 30A Bump 30B in which foaming agent 26 and bump material 29 are mixed Bump 31 having a two-layer structure of foaming agent 26 and bump material 29 Substrate lower part 32 Substrate upper part 33 Recessed part 34

Claims (9)

第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、
第1,第2の基板を間隔を設けて対向させ、
第1電極の上に供給されている発泡型バンプ材料を加熱処理して、前記発泡型バンプ材料を第2電極に接触するまで発泡させると共に、前記発泡型バンプ材料中のバンプ材料を溶融させて前記第1電極と前記第2電極とを接合する
基板接合方法。
When connecting the first electrode formed on the first substrate and the second electrode formed on the second substrate with bumps,
The first and second substrates are opposed to each other with a gap therebetween,
The foam bump material supplied on the first electrode is heat-treated to foam the foam bump material until it contacts the second electrode, and the bump material in the foam bump material is melted. Joining the first electrode and the second electrode
Substrate bonding method.
発泡型バンプ材料は、発泡剤とバンプ材料の二層構造であり、Foam type bump material is a two-layer structure of foaming agent and bump material,
前記第1電極に発泡剤を供給した後に、前記発泡剤の表面を硬化させてから前記バンプ材料で被覆するAfter supplying the foaming agent to the first electrode, the surface of the foaming agent is cured and then coated with the bump material.
請求項1記載の基板接合方法。The substrate bonding method according to claim 1.
発泡型バンプ材料は、発泡剤とバンプ材料が混じり合った構造であるFoam type bump material has a structure in which foaming agent and bump material are mixed.
請求項1記載の基板接合方法。The substrate bonding method according to claim 1.
第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、
第1電極に発泡型バンプ材料を供給し、
第1電極と第2電極が前記発泡型バンプ材料を介して接触するように第1,第2の基板の一方の基板を他方の基板に載置し、
前記発泡型バンプ材料を発泡させると共に、前記発泡型バンプ材料中のバンプ材料を溶融させて接合する
基板接合方法。
When connecting the first electrode formed on the first substrate and the second electrode formed on the second substrate with bumps,
Supplying foam bump material to the first electrode;
Placing one of the first and second substrates on the other substrate so that the first electrode and the second electrode are in contact with each other via the foam bump material;
A substrate bonding method in which the foam bump material is foamed and the bump material in the foam bump material is melted and bonded.
第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、
第1電極に発泡型バンプ材料を供給し、
第1電極と第2電極が前記発泡型バンプ材料を介して接触するように第1,第2の基板の一方の基板を他方の基板に載置し、
発泡型バンプ材料を介して第1電極と第2電極を接触させた状態で前記発泡型バンプ材料を発泡させると共に両基板の間隔が大きくなる方向に相対移動させ、前記発泡型バンプ材料中のパンプ材料を溶融させて接合する
基板接合方法。
When connecting the first electrode formed on the first substrate and the second electrode formed on the second substrate with bumps,
Supplying foam bump material to the first electrode;
Placing one of the first and second substrates on the other substrate so that the first electrode and the second electrode are in contact with each other via the foam bump material;
The foam bump material is foamed in a state where the first electrode and the second electrode are in contact with each other through the foam bump material, and is relatively moved in the direction in which the distance between the two substrates is increased. A substrate bonding method in which materials are melted and bonded.
第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、
第1の基板の第1電極の下層に発泡型バンプ材料を配置し、
前記第1電極の孔から発泡した前記発泡型バンプ材料を前記第1電極の上に突出させ、
前記第1電極の孔から突出させた前記発泡型バンプ材料を介して前記第1電極と第2電極を接触させると共に、前記発泡型バンプ材料中のパンプ材料を溶融させて前記第1電極と前記第2電極を接合する
基板接合方法。
When connecting the first electrode formed on the first substrate and the second electrode formed on the second substrate with bumps,
Arranging foam bump material under the first electrode of the first substrate,
The foam type bump material foamed through the hole of the first electrode is projected on the first electrode,
With contacting the first electrode and the second electrode via the foam-type bump material which projects from the hole of the first electrode, the said first electrode by melting bump material of the foam type bump material A substrate bonding method for bonding the second electrode .
発泡型バンプ材料は、発泡剤とこの発泡剤の外側を覆うバンプ材料、または発泡剤とバンプ材料が混じり合った構造である
請求項4〜請求項6の何れかに記載の基板接合方法。
The foam type bump material has a structure in which a foaming agent and a bump material covering the outside of the foaming agent or a mixture of the foaming agent and the bump material are mixed.
The board | substrate joining method in any one of Claims 4-6 .
第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続するに際し、
第1の基板の第1電極の下層に発泡剤を配置し、前記発泡剤の上にバンプ材料を配置し、
前記発泡剤を発泡させて前記第1電極の孔から前記バンプ材料を前記第1電極の上に突出させ、
前記第1電極の孔から突出させた前記バンプ材料を介して前記第1電極と前記第2電極を接触させると共に、前記バンプ材料を溶融させて前記第1電極と前記第2電極を接合する
基板接合方法。
When connecting the first electrode formed on the first substrate and the second electrode formed on the second substrate with bumps,
A foaming agent is disposed under the first electrode of the first substrate, a bump material is disposed on the foaming agent,
Foaming the foaming agent and projecting the bump material from the hole of the first electrode onto the first electrode;
The first electrode and the second electrode are brought into contact with each other through the bump material protruding from the hole of the first electrode, and the bump material is melted to bond the first electrode and the second electrode. Joining method.
第1の基板に形成された第1電極と第2の基板に形成された第2電極とをバンプで接続して実装した実装基板であって、
第1の基板の第1電極の下層に設けられた発泡型バンプ材料の収容部を有し、
発泡して第1電極の孔から第1電極の上に突出した前記発泡型バンプ材料を介して第1電極と第2電極が接触すると共に、前記発泡型バンプ材料中のバンプ材料が溶融して前記第1電極と前記第2電極が接合された
実装基板。
A mounting substrate in which a first electrode formed on a first substrate and a second electrode formed on a second substrate are connected by bumps and mounted,
A foam-type bump material accommodating portion provided in a lower layer of the first electrode of the first substrate;
The first electrode and the second electrode come into contact with each other through the foamed bump material that has foamed and protruded from the hole of the first electrode onto the first electrode, and the bump material in the foamed bump material is melted. A mounting substrate in which the first electrode and the second electrode are joined.
JP2005254224A 2005-09-02 2005-09-02 Board bonding method and mounting board Expired - Fee Related JP4822774B2 (en)

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