JP4824809B2 - Respiratory nano-level filter structure and manufacturing method thereof - Google Patents

Description

  The present invention relates to a filter structure and a manufacturing method thereof, and more particularly to a nano-level filter structure that filters air during breathing and a manufacturing method thereof.

  With the rapid development of the economy, the population of the city has increased rapidly, and the air pollution caused by people's economic activities is getting worse gradually. In recent years, air has been polluted by exhaust gases emitted from automobiles, motorcycles, etc., and pollutants resulting from the use of a large amount of petrochemical fuel, which adversely affects people's health. Therefore, people are sensitive to air pollution.

  In addition, people are concerned about viruses, bacteria and harmful dust in the air that directly affect health. Traditionally, people used filter materials to remove viruses and bacteria to prevent entry into the human respiratory system. Most of the conventional filters are made of a filtering material in which fibers are laminated. For example, a laminated filter manufactured using polypropylene (PP) as a base material has been used as a mask, a face mask, a nose filter, or a respiratory filter part.

  Masks are generally divided into dust masks, activated carbon masks and N95 masks, which are medical masks approved by the National Institute for Occupational Safety and Health (NIOSH). Since the N95 mask has a high tightness in the fiber structure, it can remove 95% or more of fine particles of 0.3 μm and has a higher protection function than the dust mask and the activated carbon mask.

  As shown in Table 1, since bacteria generally have a diameter of 0.3 μm or more, they can be easily removed using an N95 mask, but the virus diameter is much smaller than the micron level of bacteria. Is a level. For example, since the diameter of Severe Acute Respiratory Syndrome (SARS) virus is only 100-120 nm, the N95 mask could not remove the virus effectively.

  Since the conventional filter structure composed of a laminated structure of fibers has only a protective effect at the micron level, it has almost no protective effect against viruses at the nano level.

  For this reason, there is a filter structure in which the filter structure is refined in order to reduce the size of particles passing therethrough. However, in that case, there is a possibility that the user may feel uncomfortable when using it. That is, when the aperture ratio of the filter is small, the air permeability is low, and it is difficult for the user to normally breathe through the filter.

  Therefore, there has been a demand for a breathing nano-level filter structure and a manufacturing method thereof that can solve the above-described problems of the prior art.

  A first object of the present invention is to provide a respirable nano-level filter structure that effectively filters viruses, bacteria, and harmful dust, and a method for producing the same.

  A second object of the present invention is to provide a breathing nano-level filter structure that increases the aperture ratio and a method for manufacturing the structure.

  A third object of the present invention is to provide a breathing nano-level filter structure that extends the service life of the filter structure and a method for manufacturing the same.

  In order to solve the above-described problem, according to a first aspect of the present invention, a top gate having a plurality of top openings, a plurality of bottom openings arranged in parallel to the top gate, and having a plurality of bottom openings, An opening and the top opening are provided so as to be displaced from each other, and the top gate is provided between the top gate and the bottom gate so as to be adjacent to the top opening and the bottom opening. And a plurality of side wall gates each having a plurality of filtration grids provided in parallel to the bottom gate and having a plurality of filtration channels, and provided between the top gate and the bottom gate, 2 A plurality of supports provided at locations where the two side wall gates intersect, and the height of the filtration channel is 300 nm or less Use nano-level filter structure is provided.

  The side lengths of the top opening and the bottom opening are preferably in the micron level.

  Further, it is preferable that the sidewall gate is provided around the top opening and the bottom opening.

  The top surface of the top gate is preferably provided with a thin film for decomposing organic matter.

  Each of the supports preferably has a filler.

  The filler is preferably made of a polymer.

  According to the second aspect of the present invention, the nano-level filter structure includes a plurality of top opening areas, a plurality of bottom opening areas, and a plurality of sidewall gate areas adjacent to the top opening area and the bottom opening area, respectively. And (A1) patterning a lift film on a substrate; (A2) a part of the lift film; and a plurality of support areas provided at locations where the two sidewall gate areas intersect. And a first support layer is patterned on a portion of the substrate, but the first support layer is not formed on the bottom opening area; (A3) Patterning a first sacrificial layer on the lift film in the bottom opening area and on the first support layer in the top opening area and the sidewall gate area; (A4) before Patterning a second support layer on the sidewall gate area and the support area; and (A5) patterning a second sacrificial layer on the top opening area, the bottom opening area and the sidewall gate area. (A6) forming a top gate layer on the sacrificial layer that is the top layer of the bottom opening area and the sidewall gate area, and on the support layer that is the top layer of the support area. And (A7) removing all of the lift film and the sacrificial layer, and (A8) removing the substrate, and each sacrificial layer has a thickness of 300 nm or less. A method of manufacturing a respirable nano-level filter structure is provided.

  In step A2, when the first support layer is patterned, the side lengths of the top opening area and the bottom opening area are preferably in the micron level.

  In step A4, it is preferable that the sidewall gate area is provided around the top opening area and the bottom opening area.

  In addition, after performing Step A5, it is preferable that Step A4 and Step A5 are sequentially repeated to further perform Step A5-1 in which the support layer and the sacrificial layer are formed in a plurality of layers.

  In addition, it is preferable to further perform step A6-1 to form a thin film for decomposing organic matter on the top gate layer after performing step A6.

  According to the third aspect of the present invention, the nano-level filter structure includes a plurality of top opening areas, a plurality of bottom opening areas, and a plurality of sidewall gate areas adjacent to the top opening area and the bottom opening area, respectively. And (B1) patterning a lift film on the substrate; (B2) a part of the lift film; and a plurality of support areas provided at locations where the two sidewall gate areas intersect. And patterning a first support layer on a portion of the substrate and not providing the first support layer in the bottom opening area; and (B3) the bottom opening area and the top opening. Patterning a first sacrificial layer in the area and the sidewall gate area; and (B4) patterning a second support layer in the sidewall gate area and the support area. (B5) forming a second sacrificial layer in the top opening area, the bottom opening area, the sidewall gate area and the support area; and (B6) the top opening area and the bottom. Forming a third support layer in the opening area, the sidewall gate area and the support area; and (B7) in the top opening area, the bottom opening area, the sidewall gate area and the support area, Forming a protective layer; (B8) etching the support area; removing the third support layer to form a support recess; and (B9) the support recess. Performing a side etching to remove a part of the sacrificial layer and forming a plurality of support wing recesses, and (B10) the support recesses And a step of filling a plurality of fillers in the support wing recess, and (B11) a step of etching the top opening area and the bottom opening area to remove the third support layer (B12) patterning a part of the top opening area, the bottom opening area, the sidewall gate area, and the support area to form a first channel sacrificial layer; and (B13) the bottom opening area. Forming a top gate layer in the sidewall gate area and the support area; (B14) removing all of the lift film and the sacrificial layer; and (B15) removing the substrate; And a thickness of each of the sacrificial layers is 300 nm or less. A manufacturing method is provided.

  In step B2, when the first support layer is patterned, the side lengths of the top opening area and the bottom opening area are preferably in the micron level.

  In step B4, it is preferable that the sidewall gate area is provided around the top opening area and the bottom opening area.

  In addition, after performing Step B6, it is preferable that Step B5 and Step B6 are sequentially repeated to further perform Step B6-1 in which the support layer and the sacrificial layer are formed in a plurality of layers.

  In step B6-1, the sacrificial layer is preferably formed last.

  In addition, after performing Step B12, Step B12-1 for patterning a first channel support layer on the sidewall gate area and the support area, Step B12, and Step B12-1 are sequentially repeated, and the channel It is preferable to further perform Step B12-2 in which a support layer and the channel sacrificial layer are formed in a plurality of layers, and the channel sacrificial layer is finally formed.

  Moreover, it is preferable to further perform Step B13-1 of forming a thin film for decomposing organic matter on the top gate layer after performing Step B13.

  The nano-level filter structure for breathing and the manufacturing method thereof according to the present invention can easily manufacture a nano-level filter lattice by rapidly manufacturing the nano-level filter structure by manufacturing the nano-level filter structure using semiconductor manufacturing process technology. Can be manufactured. One of the micro-level top and bottom gates is utilized to perform micro-level initial filtration on the air flow, thus extending the life of the filter. Furthermore, since the aperture ratio of the filter is increased by using a multi-layered filter grid, the user can easily breathe even if the filter is used.

1 is a cross-sectional view illustrating a nano-level filtration channel according to an embodiment of the present invention. FIG. 6 is a cross-sectional view illustrating a nano-level filtration channel according to another embodiment of the present invention. 1 is a perspective view illustrating a nano-level filter structure according to an embodiment of the present invention. FIG. 5 is a perspective view illustrating a nano-level filter structure according to another embodiment of the present invention. FIG. 5 is a plan view showing the nano-level filter structure of FIGS. 3 and 4. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 1st Embodiment of this invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the nano level filter structure by 2nd Embodiment of this invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. FIG. 6 is a partial cross-sectional view showing a nano-level filter structure with five filtration channels according to an embodiment of the present invention. It is sectional drawing which shows the step which expands the channel width provided in the side part of the bottom part opening area by 2nd Embodiment of this invention. It is sectional drawing which shows the step which expands the channel width provided in the side part of the bottom part opening area by 2nd Embodiment of this invention. It is sectional drawing which shows the step which expands the channel width provided in the side part of the bottom part opening area by 2nd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited thereby.

  When the semiconductor manufacturing process technology and the panel manufacturing process technology are used, the thickness of the thin film can be accurately controlled and easily manufactured to a nano-level thickness. Therefore, the present invention uses a non-toxic material, utilizes a thin film deposition process (eg, sputtering, physical vapor deposition, or chemical vapor deposition) often used in semiconductor manufacturing process technology or panel manufacturing process technology, and has a thickness. After forming a nano-level thin film, selective etching with different etching rates is performed using etching techniques (eg, dry etching, wet etching, or gas etching) often used in semiconductor manufacturing process technology or panel manufacturing process technology. Do. In this manner, by combining an etching method with materials having different etching ratios, various stacked structures are formed by materials adjacent to each other, and etching is performed to form a lattice-like channel structure. In the present invention, since the semiconductor manufacturing process technology or the panel manufacturing process technology is used, the thickness of the laminated structure can be accurately controlled, and a nano-level filter structure can be rapidly manufactured. Furthermore, in order to increase the amount of air flow introduced and the amount of exhaust, the number of layers in the stack is increased to increase the aperture ratio of the filter structure.

  First, refer to FIG. FIG. 1 is a cross-sectional view illustrating a nano-level filtration channel according to an embodiment of the present invention. The nano-level filter structure includes a top gate 110, a bottom gate 120, and a plurality of supports 130. The air flow AF is introduced from the top opening 112 of the top gate 110, passes through the filtration channel formed by the distance d1 of the support 130, and is discharged from the bottom opening 122 of the bottom gate 120. Adjusting the thickness of the support 130 can change the filtration level of the filtration channel. In the present embodiment, a filter structure having a nano size and a high aperture ratio is manufactured with the above-described configuration.

  Please refer to FIG. FIG. 2 is a cross-sectional view illustrating a nano-level filtration channel according to another embodiment of the present invention. In order to increase the aperture ratio of the filter, the number or thickness of the support 130 is increased in the manufacturing process, the distance d2 between the top gate 110 and the bottom gate 120 is increased, and a plurality of layers are formed at the location of the filtration channel. Sidewall gates 140 are formed. The sidewall gate 140 is formed by a plurality of filter gratings 142. As shown in FIG. 2, two filtration channels are provided in this embodiment, and the distance between the filtration grid 142 and the top gate 110 or the bottom gate 120 is d1 (shown in FIG. 1). When the number of stacked layers of the support 130 is increased or the thickness is increased, the distance between the top gate 110 and the bottom gate 120 can be increased as d2, and more filtering channels can be provided in the sidewall gate 140. Can be provided. The distances d1 and d2 can be adjusted and changed in height in the process (for example, sputtering, physical vapor deposition, chemical vapor deposition, or other equivalent process). The embodiment of FIG. 2 has one more filtration channel than the embodiment of FIG. 1 (that is, one more route through which the air flow AF flows), so that the aperture ratio of the filtration channel can be effectively increased. Further, the gap w2 between the top opening 112 of the top gate 110 and the bottom opening 122 of the bottom gate 120 is adjusted by a photomask and photolithography process, and the air flow introduced by forming the opening at the micron level. Initial filtration is performed on AF (micron level particles).

  Please refer to FIG. FIG. 3 is a perspective view illustrating a nano-level filter structure according to an embodiment of the present invention. In FIG. 3, the structure of FIG. 2 is manufactured by a semiconductor manufacturing process technology or a panel manufacturing process technology. As shown in FIG. 3, the top gate 110 is provided with eight top openings 112. Eight bottom openings 122 are provided on the opposite side (ie, bottom side) of the top gate 110, and the bottom gate 120 is provided on the opposite side (ie, bottom side) of the top opening 112. The area and numerical aperture of the filter structure are not limited to those shown in FIG. 3, and may be changed according to actual needs.

  Please refer to FIG. FIG. 4 is a perspective view illustrating a nano-level filter structure according to another embodiment of the present invention. As shown in FIG. 4, a sidewall gate 140 is provided around the nano-level filter structure according to another embodiment. The structure of another embodiment shown in FIGS. 3 and 4 is manufactured by a semiconductor manufacturing process technology or a panel manufacturing process technology.

  Please refer to FIG. FIG. 5 is a plan view showing the nano-level filter structure of FIGS. 3 and 4. In the following, the top opening area, the bottom opening area, the sidewall gate area and the support area are manufactured by means of a sectional view along the line AA ′ of the bottom gate, BB ′ of the top gate and CC ′ of the sidewall gate. The process will be described. The shapes of the top opening 112, the top gate 110, the support 130, and the sidewall gate 140 of this embodiment are merely examples, and other shapes (for example, circular shapes) can be used as long as the filter structure of the present invention can be configured. It may be. Further, in order to explain in detail the manufacturing process of the top opening area, the bottom opening area, the sidewall gate area and the support area, the sectional view of the sidewall gate line CC ′ in FIG. 'And the top gate line BB' are enlarged to substantially the same size as the cross-sectional view.

(First embodiment)
Reference is made to FIGS. 6A to 11C are cross-sectional views illustrating a manufacturing process of the nano-level filter structure according to the first embodiment of the present invention. 6A, FIG. 7A, FIG. 8A, FIG. 9A, FIG. 10A and FIG. 11A are cross-sectional views taken along line AA ′ of the bottom gate of FIG. 6B, FIG. 7B, FIG. 8B, FIG. 9B, FIG. 10B and FIG. 11B are cross-sectional views along the line BB ′ of the top gate of FIG. 6C, FIG. 7C, FIG. 8C, FIG. 9C, FIG. 10C, and FIG. 11C are cross-sectional views along the line CC ′ of the sidewall gate of FIG. In the first embodiment, a nano-level filtration structure is manufactured using semiconductor manufacturing process technology or panel manufacturing process technology. Methods for forming each layer in the manufacturing process include sputtering, chemical vapor deposition (CVD), physical vapor deposition (PVD), or other equivalent methods. Here, the pattern formation refers to a lithography and etching technique often used in a semiconductor manufacturing process technique or a panel manufacturing process technique. This etching technique includes dry etching, wet etching, gas etching or other equivalent etching methods.

  6A-C, the nano-level filtration structure according to the first embodiment of the present invention includes a support area 200, a top opening area 300, a bottom opening area 400, and a sidewall gate area 500. First, in step A1, a glass substrate, a wafer substrate, a plastic substrate, or another equivalent substrate 601 is prepared, and a lift film 603 is formed on the substrate 601 by patterning. To do. Next, in Step A2, a first support layer 605a is patterned on a part of the lift film 603 and a part of the substrate 601. That is, the first support layer 605 a is formed on the lift film 603 in the support area 200, the top opening area 300, and the sidewall gate area 500, while the first support layer 605 a is formed in the bottom opening area 400. The body layer 605a is not formed.

  As shown in FIGS. 7A-C, in step A3, using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques, over the lift film 603 in the bottom opening area 400; A first sacrificial layer 607 a is formed on the top opening area 300 and the first support layer 605 a in the sidewall gate area 500. This sacrificial layer, which is finally removed, can change the filtration level of the filtration channel by adjusting the thickness. Utilizing semiconductor manufacturing process technology or panel manufacturing process technology, the thickness of the film layer can be changed very easily and accurately. The thickness (or height) of the sacrificial layer in this embodiment is 300 nm or less so that the virus can filter the filtration channel.

  As shown in FIGS. 8A-C, in step A4, the first sacrificial layer 607a of the sidewall gate area 500 is formed using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques. A second support layer 605b is formed on the top and on the first support layer 605a in the support area 200. As shown in FIG. 8C, the support area 200 and the second support layer 605b in the sidewall gate area 500 are a continuous layered structure, and the support layer in the sidewall gate area 500 is shown in FIGS. It is formed like a filtration grid 142. The first support layer 605a of the support area 200, the top opening area 300, and the sidewall gate area 500 of FIGS. 8A-C is formed like the bottom gate 120 of FIGS.

  As shown in FIGS. 9A-C, in step A5, a first of the top opening area 300 and the bottom opening area 400 is formed using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques. The second sacrificial layer 607 b is formed on the sacrificial layer 607 a and on the second support layer 605 b in the sidewall gate area 500.

  As shown in FIGS. 10A-C, in step A6, the top layer of bottom opening area 400 and sidewall gate area 500 using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques. On top of the sacrificial layer (ie, the second sacrificial layer 607b) and on the support layer (ie, the second support layer 605b) that is the top layer of the support area 200. top gate layer) 610 is formed. As shown in FIG. 10B, the top gate layer 610 of the bottom opening area 400 is formed like the top gate 110 of FIGS.

  As shown in FIGS. 11A to 11C, in step A7, final etching is performed by an etching technique (for example, dry etching, wet etching, gas etching, or other equivalent method), and the lift film 603 and all the sacrificial layers 607a and 607b are removed. Finally, in step A8, the substrate 601 is removed to form a nano-level filter structure as shown in FIG. 3 or FIG. The method for removing the substrate 601 may be a scribe or other equivalent cutting technique. Further, as known to those skilled in the art of semiconductor manufacturing process technology or panel manufacturing process technology, various structures provided on the side portions as shown in FIGS. 3 and 4 are formed in a manufacturing process using a photomask. be able to. Finally, the nano-level filtration structure may be used as a filtration device such as a canister used in a face mask, a filtration layer provided in the mask, or a nasal filter by combining with other fixing members.

  12A-C are partial cross-sectional views showing nano-level filter structures with five filtration channels. 12A to 12C correspond to w1, w2, and d2 in FIGS. 1 and 2, respectively. As shown in FIGS. 12A to 12C, the first to fifth support layers correspond to 605a to 605e, respectively, and the first to fifth sacrificial layers are not shown because they have already been removed. 6A to 11C are cross-sectional views showing a manufacturing method showing a nano-level filter structure having two filtration channels, but the number of filtration channels may be further increased to increase the aperture ratio. Therefore, based on the above-described method, step A5 may be performed after step A5, and step A4 and step A5 shown in FIGS. 8A to 9C may be repeated to increase the number of filtration channels. That is, the support layer and the sacrificial layer may be alternately stacked to increase the number of filtration channels. In the nano-level filter structure with five channels in FIG. 12, the air flow is introduced from the top opening area 300, nano-level filtration is performed by the sidewall gate area 500, and then discharged from the bottom opening area 400. Conversely, when an air flow is introduced from the bottom opening area 400, it is discharged from the top opening area 300 through the sidewall gate area 500. As known to those skilled in the art, as long as breathing is performed and the air flow passes through the sidewall gate area 500, the inhaled air flow is introduced from the bottom opening area 400, not from the top opening area 300. May be. That is, the direction in which the nano-level filter structure is used is not particularly limited, and the top surface or the bottom surface may be used as the gas introduction surface.

In the first embodiment of the present invention, step A6-1 may be performed after performing step A6 and before removing the lift film 603 and all the sacrificial layers 607a and 707b. In Step A6-1, a thin film 612 used for decomposing organic substances is formed on the top gate layer 610 (shown in FIGS. 12A to 12C). The thin film 612 uses a catalyst material such as titanium (Ti), titanium dioxide (TiO ₂ ), or platinum (Pt), which is a material capable of killing anti-viral, anti-bacterial, or virus and bacteria. Structural organics can be decomposed. The thin film 612 may be formed by physical vapor deposition, chemical vapor deposition, sputtering, or an equivalent process.

In the first embodiment, the lift film 603, the support layers 605 a to e, the sacrificial layers 607 a to e and the top gate layer 610 are formed when the lift film 603 and the sacrificial layers 607 a to e are etched. e and the top gate layer 610 are made of a remaining material. Tables 2-7 show the materials according to the first embodiment of the present invention, the etching method when forming each film layer, and the etching method when performing the last etching (removing the lift film and all the sacrificial layers). It shows. As is known to those skilled in the art, aspects of the present invention are not limited to the materials and etch schemes of the present embodiment, as long as a nano-level filter structure can be formed, other materials may be used. Etching methods may also be used. The component of PAN wet etching is (phosphoric acid + acetic acid + nitric acid) aqueous solution, and the component of BOE wet etching is (HF + NH ₄ F) aqueous solution.

(Second Embodiment)
Reference is made to FIGS. 13A to 24C are cross-sectional views illustrating a manufacturing process of the nano-level filter structure according to the second embodiment of the present invention. FIGS. 13A, 14A, 15A, 16A, 17A, 18A, 19A, 20A, 21A, 22A, 23A, and 24A are taken along line AA ′ of the bottom gate of FIG. FIG. FIGS. 13B, 14B, 15B, 16B, 17B, 18B, 19B, 20B, 21B, 22B, 23B, and 24B are taken along line BB ′ of the top gate of FIG. FIG. FIGS. 13C, 14C, 15C, 16C, 17C, 18C, 19C, 20C, 21C, 22C, 23C, and 24C are taken along the sidewall gate line CC ′ of FIG. FIG. Similar to the first embodiment, the second embodiment of the present invention is formed in a laminated structure, and each filtration channel is manufactured by an etching method. However, when forming the filtration channel of the second embodiment in a laminated structure, it may be formed in a lump. Hereinafter, each step of the manufacturing process will be described with reference to FIGS.

  As shown in FIGS. 13A-C, the nano-level filtration structure according to the second embodiment of the present invention includes a support area 200, a top opening area 300, a bottom opening area 400, and a sidewall gate area 500. First, in step B1, a substrate 701 which is a glass substrate, a wafer substrate, a plastic substrate, or other equivalent substrate is prepared, and a lift film 703 is formed on the substrate 701 by patterning. . Next, in Step B2, the first support layer 705a is patterned on part of the lift film 703 and part of the substrate 701. That is, the first support layer 705 a is formed on the lift film 703 in the support area 200, the top opening area 300, and the sidewall gate area 500, but the first opening layer 400 is formed on the bottom opening area 400. The support layer 705a is not formed.

  As shown in FIGS. 14A-C, in step B3, using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques, over the lift film 703 in the bottom opening area 400; A first sacrificial layer 707 a is formed on the top opening area 300 and the first support layer 705 a in the sidewall gate area 500. The thickness (or height) of this sacrificial layer is 300 nm or less.

  As shown in FIGS. 15A-C, in step B4, the first sacrificial layer 707a of the sidewall gate area 500 is formed using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques. A second support layer 705b is formed on the top and on the first support layer 705a in the support area 200. As shown in FIG. 15C, the second support layer 705b provided in the support area 200 and the sidewall gate area 500 is a continuous layered structure, and the support layer in the sidewall gate area 500 is shown in FIG. It is formed like a filtration grid 142 of ~ 4. The first support layer 705a of the support area 200, the top opening area 300, and the sidewall gate area 500 of FIGS. 15A-C is formed like the bottom gate 120 of FIGS.

  As shown in FIGS. 16A-C, in step B5, using a sputtering, chemical vapor deposition, physical vapor deposition or other equivalent method, the top opening area 300, the bottom opening area 400, the sidewall gate area 500 and the support area. A second sacrificial layer 707 b is formed on 200.

  As shown in FIGS. 17A-C, in step B6, a top opening area 300, a bottom opening area 400, a sidewall gate area 500 and a support area are utilized using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods. 200, a third support layer 705c is formed. In step B7, a protective layer 709 is formed in the top opening area 300, the bottom opening area 400, the sidewall gate area 500, and the support area 200 using sputtering, chemical vapor deposition, physical vapor deposition, or other equivalent methods. .

  As shown in FIGS. 18A to 18C, in step B8, the support area 200 is etched to remove the third support layer 705c, and the support recesses 210 are formed in the support areas 200, respectively. To do. For forming the support recess 210, a high-power anisotropic etching manufacturing process is used. Therefore, when the patterned resist layer 720 is subjected to high-power anisotropic etching, the resist provided at the opening edge may be removed and the film layer formed under the resist layer 720 may be etched. It was difficult to control the line width to be formed uniformly. In particular, when the number of filtration channels is large, the working time of high-power anisotropic etching becomes longer, and the possibility that the opening edge of the resist layer 720 is removed increases. Therefore, when the protective layer 709 is provided, the film layer formed thereunder can be protected from high-power anisotropic etching. The protective layer 709 is made of a material that can block high-power etching. For example, anisotropic etching with high power is a dry etching technique, and the protective layer 709 has a large reaction to wet etching. Therefore, after the wet etching is performed on the protective layer 709 to form an opening, The support recess 210 is formed using power dry etching, and the combination of the resist layer 720 and the protective layer 709 prevents damage to the underlying film layer.

  Further, in Step B8, the third support layer 705c is removed, and an end point detector (EPD) is used, or other control having a similar etching effect known to those skilled in the art. Etching depth is controlled by using a technique.

  Reference is made to FIGS. As shown in FIGS. 19A to 19C, in step B <b> 9, side etching is performed in the support recess 210 to remove a part of the sacrificial layer, and a plurality of support wing recesses 212 are formed in the support area 200. After that, the resist layer 720 is removed.

  Reference is made to FIGS. As shown in FIGS. 20A to 20C, in step B <b> 10, a plurality of fillers 211 are filled in the support recesses 210 and the support wing recesses 212. As shown in FIGS. 20A to 20C, the filling body 211 is used as a support in the support body area 200, and the strength of the entire structure can be improved by extending the support body wing recess 212. A flexible material (for example, a polymer) can be used as the material of the filling body, so that the flexibility of the filter structure body can be increased and the stability of the structure can be increased. First, the polymer is filled in the support recesses 210 and the support wing recesses 212, and then the polymer is cured by heating in a heating furnace.

  Reference is made to FIGS. As shown in FIGS. 21A to 21C, in step B11, the top opening area 300 and the bottom opening area 400 are etched to remove the third support layer 705c. Similarly to Step B8, by combining the resist layer 720 and various etching techniques, the protective film is etched to form an opening, and then high-power anisotropic etching is performed. Further, the etching end point detector similarly adjusts the etching depth and removes the third support layer 705c. After the etching is completed, the resist layer 720 is removed.

  Reference is made to FIGS. As shown in FIGS. 22A-C, Step B12 is performed using sputtering, chemical vapor deposition, physical vapor deposition, or other equivalent methods, and lithography and etching techniques to form a top opening area 300, a bottom opening area 400, a sidewall. A first channel sacrificial layer 710 a is patterned in the gate area 500 and a part of the support area 200.

  Reference is made to FIGS. As shown in FIGS. 23A-C, Step B13 is performed using sputtering, chemical vapor deposition, physical vapor deposition or other equivalent methods, and lithography and etching techniques to provide a bottom opening area 400, sidewall gate area 500 and support. A top gate layer 713 is formed in the body area 200. As shown in FIG. 23B, the top gate layer 713 of the bottom opening area 400 is formed like the top gate 110 of FIGS.

  Reference is made to FIGS. As shown in FIGS. 24A to 24C, in step B14, the final etching is performed by an etching technique (for example, dry etching, wet etching, gas etching or other equivalent method), and the lift film 703 and all the sacrificial layers 707a, 707b, 710a is removed. Finally, in step B15, the substrate 701 is removed to form a nano-level filter structure as shown in FIG. 3 or FIG. As a method of removing the substrate 701, a scribe or other equivalent cutting technique may be used.

  Reference is made to FIGS. 25A-C are partial cross-sectional views showing nano-level filter structures with five filtration channels. 25A to 25C correspond to w1, w2, and d2 in FIGS. 1 and 2, respectively. The first to fifth support layers correspond to 705a to 705e, respectively. As described above, FIGS. 13A to 24C illustrate a method for manufacturing a nano-level filter structure having three filtration channels. However, in order to increase the aperture ratio, the number of filtration channels may be four or more. . Therefore, based on the above-mentioned method, after performing step B6, step B6-1 may be performed and manufacturing process B5, B6 may be repeated and the number of filtration channels may be increased. That is, the support layer and the sacrificial layer may be alternately stacked to increase the number of filtration channels. Furthermore, in step B6-1, step B5 may be performed as the last step, and the last layer to be formed may be formed as a sacrificial layer. At this time, the protective layer 709 may be used as a support layer to increase the number of filtration channels.

  Reference is made to FIGS. As shown in FIGS. 26A to 26C, in the second embodiment of the present invention, after performing Step B12, the sidewall gate area 500 and the support area 200 are patterned to form the first channel support layer 712a. Step (Step B12-1), Step B12 and Step B12-1 are sequentially repeated to form a plurality of channel support layers 712a and 712b and a plurality of channel sacrificial layers, and the last layer formed is channel sacrificial. The step of forming a layer (step B12-2) may be further performed. When Step B12-1 and Step B12-2 are performed, the channel width of the side portion of the bottom opening area 400 can be increased (shown in FIG. 26B). The greater the number of filtration channels formed in step B6-1, the wider the channel width provided at the side of the bottom opening area 400. For example, when three to four channel sacrificial layers are used, the channel width provided on the side of the bottom opening area 400 can be increased. In the embodiment of FIGS. 26A to C, three channel sacrificial layers are formed (shown in the X part of FIG. 26B). However, in steps B6-1, B12-2, and B12-2, the number of stacked layers is changed to It may be changed as necessary.

In the second embodiment of the present invention, after performing Step A13, before removing the lift film 703 and all the sacrificial layers 707a, 707b, and 710a, Step B13-1 is performed, and the thin film used for decomposing organic matter. 714 may be formed on top gate layer 713 (shown in FIGS. 25A-C or FIGS. 26A-C). This thin film 714 is made of titanium (Ti), titanium dioxide (TiO ₂ ), platinum (Pt), or the like that can kill antiviral, antibacterial, or virus or bacteria as a catalyst material. Organic matter can be decomposed. The thin film 714 may be formed by physical vapor deposition, chemical vapor deposition, sputtering, or an equivalent process.

See Tables 8-13. Tables 8 to 13 show materials according to the second embodiment of the present invention, an etching method when forming each film layer, and an etching method when performing the last etching (removing the lift film and all the sacrificial layers). Is shown. As known to those skilled in the art, the materials and etching schemes are not limited to this embodiment, and other materials and etching schemes capable of forming a nano-level filter structure may be used. The component of PAN wet etching is (phosphoric acid + acetic acid + nitric acid) aqueous solution, and the component of BOE wet etching is (HF + NH ₄ F) aqueous solution.

  In the manufacturing method according to the first and second embodiments of the present invention, the top gate 110 of FIGS. 2 to 4 is formed by the bottom opening area 400, and the bottom gate 120 of FIGS. 2 to 4 is formed by the top opening area 300. The sidewall gate 140 of FIGS. 2 to 4 is formed by the sidewall gate area 500, and the support 130 of FIGS. 2 to 4 is formed by the support area 200. The support area 200 is provided at a location where the sidewall gate area 500 intersects.

  Furthermore, the present invention can manufacture a nano-sized filter lattice by a semiconductor manufacturing process technology, and can quickly manufacture a nano-level filter structure. Furthermore, the thickness of each membrane layer can be controlled effectively, and the thickness of each membrane layer can be adjusted according to actual needs, and the thickness of the sacrificial layer can be controlled to control the filtration level of the filter structure. You can also decide. In addition, one of the micron sized top and bottom gates is used to perform micron-level initial filtration on the introduced air flow, thus extending the life of the filter. In addition, the multi-layered filter grid can increase the aperture ratio of the filter and also facilitate breathing through the filter. A thin film capable of decomposing organic matter is formed on the surface of the filter structure, which is made of a material capable of killing anti-viral, anti-bacterial or virus and bacteria.

  While the preferred embodiments of the present invention have been disclosed above, as may be appreciated by those skilled in the art, they are not intended to limit the invention in any way. Various changes and modifications can be made without departing from the spirit and scope of the present invention. Accordingly, the scope of the claims of the present invention should be construed broadly including such changes and modifications.

DESCRIPTION OF SYMBOLS 110 Top gate 112 Top opening 120 Bottom gate 122 Bottom opening 130 Support body 140 Side wall gate 142 Filtration lattice 200 Support body area 210 Support body recessed part 211 Filling body 212 Support body wing recessed part 300 Top opening area 400 Bottom opening area 500 Side wall gate area 601 Substrate 603 Lift film 605a First support layer 605b Second support layer 605c Third support layer 605d Fourth support layer 605e Fifth support layer 607a First sacrificial layer 607b Second sacrificial Layer 610 top gate layer 612 thin film 701 substrate 703 lift film 705a first support layer 705b second support layer 705c third support layer 705d fourth support layer 705e fifth support layer 707a first Sacrificial layer 707b second sacrificial layer 70 Protective layer 710a First channel sacrificial layer 712a First channel support layer 712b Second channel support layer 712c Third channel support layer 712d Fourth channel support layer 713 Top gate layer 714 Thin film 720 Resist layer d1 interval d2 interval w1 interval w2 interval AF air flow AA 'cross-sectional line of bottom gate BB' cross-sectional line of top gate CC 'cross-sectional line of side gate X X part

Claims (15)

A top gate having a plurality of top openings;
A bottom gate disposed in parallel to the top gate, having a plurality of bottom openings, the bottom opening and the top opening being provided so as to be misaligned;
Between the top gate and the bottom gate, adjacent to the top opening and the bottom opening, each having a plurality of filtration grids provided in parallel to the top gate and the bottom gate A plurality of sidewall gates formed with a plurality of filtration channels;
A plurality of supports provided between the top gate and the bottom gate and provided at a location where the two sidewall gates intersect,
A nano-level filter structure for respiration, wherein a channel height of the filtration channel is 300 nm or less.   The breathing nano-level filter structure according to claim 1, wherein the sidewall gate is provided around the top opening and the bottom opening.   The respiratory nano-level filter structure according to claim 1, wherein a thin film for decomposing organic matter is provided on a top surface of the top gate.   The respiratory nano-level filter structure according to claim 1, wherein each of the supports has a filler. The respiratory nano-level filter structure according to claim 4 , wherein the filler is made of a polymer. The nano-level filter structure includes a plurality of top opening areas, a plurality of bottom opening areas, a plurality of sidewall gate areas adjacent to the top opening area and the bottom opening area, respectively, and the two sidewall gate areas. A plurality of support areas provided in places,
(A1) patterning a lift film on the substrate;
(A2) A first support layer is patterned on a part of the lift film and a part of the substrate, and the first support layer is formed on the bottom opening area. Non-forming steps,
(A3) patterning a first sacrificial layer on the lift film in the bottom opening area and on the first support layer in the top opening area and the sidewall gate area;
(A4) patterning a second support layer on the sidewall gate area and the support area;
(A5) patterning a second sacrificial layer on the top opening area, the bottom opening area and the sidewall gate area;
(A6) forming a top gate layer on the sacrificial layer that is the uppermost layer of the bottom opening area and the sidewall gate area, and on the support layer that is the uppermost layer of the support area; ,
(A7) removing all of the lift film and the sacrificial layer;
(A8) removing the substrate,
A thickness of each sacrificial layer is 300 nm or less, The manufacturing method of the nano-level filter structure for respiration characterized by things. 7. The method of manufacturing a respiratory nano-level filter structure according to claim 6 , wherein in step A4, the sidewall gate area is provided around the top opening area and the bottom opening area. After the step A5, sequentially repeating the steps A4 and step A5, breathing according to claim 6, characterized in that it further performs the step A5-1 to form the support layer and the sacrificial layer in a plurality of layers Manufacturing method of nano-level filter structure. The method for producing a respiratory nano-level filter structure according to claim 6 , further comprising performing step A6-1 of forming a thin film for decomposing organic matter on the top gate layer after performing step A6. . The nano-level filter structure includes a plurality of top opening areas, a plurality of bottom opening areas, a plurality of sidewall gate areas adjacent to the top opening area and the bottom opening area, respectively, and the two sidewall gate areas. A plurality of support areas provided in places,
(B1) patterning a lift film on the substrate;
(B2) patterning a first support layer on a part of the lift film and a part of the substrate, and not providing the first support layer in the bottom opening area;
(B3) patterning a first sacrificial layer in the bottom opening area, the top opening area and the sidewall gate area;
(B4) patterning a second support layer on the sidewall gate area and the support area;
(B5) forming a second sacrificial layer in the top opening area, the bottom opening area, the sidewall gate area, and the support area;
(B6) forming a third support layer in the top opening area, the bottom opening area, the sidewall gate area and the support area;
(B7) forming a protective layer on the top opening area, the bottom opening area, the sidewall gate area, and the support area;
(B8) etching the support area, removing the third support layer, and forming a support recess, respectively;
(B9) performing side etching in the support recess, removing a part of the sacrificial layer, and forming a plurality of support wing recesses;
(B10) filling a plurality of fillers in the support recess and the support wing recess;
(B11) etching the top opening area and the bottom opening area to remove the third support layer;
(B12) patterning a part of the top opening area, the bottom opening area, the sidewall gate area, and the support area to form a first channel sacrificial layer;
(B13) forming a top gate layer in the bottom opening area, the sidewall gate area and the support area;
(B14) removing all of the lift film and the sacrificial layer;
(B15) removing the substrate,
A thickness of each sacrificial layer is 300 nm or less, The manufacturing method of the nano-level filter structure for respiration characterized by things. 11. The method of manufacturing a respiratory nano-level filter structure according to claim 10 , wherein in step B4, the sidewall gate area is provided around the top opening area and the bottom opening area. After the step B6, sequentially repeating steps B5 and step B6, breathing of claim 10, characterized by further performing steps B6-1 to form the support layer and the sacrificial layer in a plurality of layers Manufacturing method of nano-level filter structure. 13. The method of manufacturing a respiratory nano-level filter structure according to claim 12 , wherein the sacrificial layer is formed last in step B6-1. After performing Step B12
Patterning a first channel support layer on the sidewall gate area and the support area, step B12-1;
Step B12 and Step B12-1 are sequentially repeated to further form Step B12-2 in which the channel support layer and the channel sacrificial layer are formed in a plurality of layers, and the channel sacrificial layer is finally formed. The manufacturing method of the nano-level filter structure for respiration of Claim 10 . 11. The method for producing a respiratory nano-level filter structure according to claim 10 , further comprising performing Step B <b> 13-1 of forming a thin film for decomposing organic matter on the top gate layer after performing Step B <b> 13.

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