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JP4829577B2 - Light emitting device - Google Patents
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JP4829577B2 - Light emitting device - Google Patents

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JP4829577B2
JP4829577B2 JP2005272845A JP2005272845A JP4829577B2 JP 4829577 B2 JP4829577 B2 JP 4829577B2 JP 2005272845 A JP2005272845 A JP 2005272845A JP 2005272845 A JP2005272845 A JP 2005272845A JP 4829577 B2 JP4829577 B2 JP 4829577B2
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led chip
metal plate
light emitting
light
mounting
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JP2007088077A (en
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策雄 鎌田
恭志 西岡
洋二 浦野
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Panasonic Corp
Panasonic Electric Works Co Ltd
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Matsushita Electric Works Ltd
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Description

本発明は、LEDチップ(発光ダイオードチップ)を利用した発光装置に関するものである。   The present invention relates to a light emitting device using an LED chip (light emitting diode chip).

近年のLEDチップの高出力化に伴って、LEDチップを照明用途に利用する発光装置の開発が進められている(例えば特許文献1参照)。   With the recent increase in output of LED chips, development of light-emitting devices that use LED chips for lighting purposes is underway (see, for example, Patent Document 1).

上記特許文献に開示された発光装置は、金属などの無機材料により一面開口の箱形に形成された基材と、透明なガラス或いはセラミックからなり基材の開口を塞ぐ気密容器形成材とで構成される気密容器を備え、基材の底壁に複数個のLEDチップを分散して実装してあり、LEDチップの発光は気密容器形成材を通して気密容器の外部に照射されるようになっている。
特開2004−119634号公報
The light emitting device disclosed in the above-mentioned patent document is composed of a base material formed in a box shape with one surface opening by an inorganic material such as metal, and an airtight container forming material that is made of transparent glass or ceramic and closes the base material opening. A plurality of LED chips are distributed and mounted on the bottom wall of the base material, and light emitted from the LED chips is irradiated outside the hermetic container through the hermetic container forming material. .
JP 2004-119634 A

上記構成の発光装置では、金属などの無機材料からなる基材の底壁にLEDチップを直接実装しているので、基材の底壁においてLEDチップの非実装部位に絶縁性基材を形成して、絶縁性基材の表面に各LEDチップの電極間を電気的に接続するリードパターンを形成した場合、LEDチップから側方(つまり底壁の表面と平行な方向)に照射された光の一部が、絶縁性基材やリードパターンにケラレが発生して、光の取り出し損失が増加するという問題があった。   In the light emitting device having the above configuration, since the LED chip is directly mounted on the bottom wall of the base material made of an inorganic material such as metal, an insulating base material is formed on the non-mounting portion of the LED chip on the bottom wall of the base material. When the lead pattern for electrically connecting the electrodes of each LED chip is formed on the surface of the insulating substrate, the light irradiated from the LED chip to the side (that is, the direction parallel to the surface of the bottom wall) In part, vignetting occurred on the insulating base material and the lead pattern, and there was a problem that the light extraction loss increased.

本発明は上記問題点に鑑みて為されたものであり、その目的とするところは、光の取り出し損失を低減した発光装置を提供することにある。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a light emitting device with reduced light extraction loss.

上記目的を達成するために、請求項1の発明は、LEDチップと、LEDチップが搭載された実装基板と、透明樹脂の成形品からなり実装基板におけるLEDチップの実装面側でLEDチップを囲む枠体と、枠体の内側に透明樹脂材料を充填して形成されLEDチップを封止する封止部と、封止部に重ねて配置されたレンズと、LEDチップからの照射光により励起されてLEDチップの発光色とは異なる色の光を発する蛍光体を透明材料とともに成形したドーム状の成形品であってレンズの光出射面および枠体の周囲との間に、光出射面と内面との距離が略一定となるように空気層を設けた状態で実装面に配置される色変換部材とを備え、実装基板は、LEDチップが搭載される金属板と、金属板におけるLEDチップの非搭載部位に積層され、金属板と反対側の表面にLEDチップの電極に電気的に接続されるリードパターンが形成された絶縁性基材とからなり、金属板におけるLEDチップの実装部位に、LEDチップ側に突出して先端面にLEDチップが搭載される突台部を設け、当該突台部の突出量を絶縁性基材の厚みとリードパターンの厚みとを合わせた寸法以上に設定したことを特徴とする。 In order to achieve the above object, the invention of claim 1 is composed of an LED chip, a mounting substrate on which the LED chip is mounted, and a molded product of transparent resin, and surrounds the LED chip on the mounting surface side of the LED chip on the mounting substrate. Excited by the frame, a sealing part formed by filling the inside of the frame with a transparent resin material and sealing the LED chip, a lens arranged to overlap the sealing part, and irradiation light from the LED chip A dome-shaped molded product in which a phosphor that emits light of a color different from the emission color of the LED chip is molded together with a transparent material, and between the light emitting surface of the lens and the periphery of the frame, the light emitting surface and the inner surface And a color conversion member disposed on the mounting surface in a state where an air layer is provided so that the distance between the LED chip and the mounting plate is a metal plate on which the LED chip is mounted, and the LED chip on the metal plate. Laminated on non-mounting site And an insulating substrate having a lead pattern formed on the surface opposite to the metal plate and electrically connected to the electrode of the LED chip, and protrudes toward the LED chip on the mounting portion of the LED chip on the metal plate. In addition, a protruding portion on which the LED chip is mounted is provided on the tip surface, and the protruding amount of the protruding portion is set to be equal to or larger than the combined thickness of the insulating base material and the lead pattern.

本発明によれば、金属板におけるLEDチップの搭載部位には突台部が形成され、この突台部の突出量を、LEDチップの非搭載部位に形成された絶縁性基材の厚みと、絶縁性基材の表面に形成されたリードパターンの厚みとを合わせた寸法以上に設定しているので、突台部に搭載されたLEDチップから側方に照射された光が絶縁性基材やリードパターンに遮光されてケラレが発生することはなく、光の取り出し損失を低減できるという効果がある。   According to the present invention, a protruding portion is formed on the mounting portion of the LED chip in the metal plate, and the protruding amount of the protruding portion is determined by the thickness of the insulating base formed on the non-mounting portion of the LED chip, Since the thickness of the lead pattern formed on the surface of the insulating base material is set to be equal to or larger than the dimension, the light irradiated from the LED chip mounted on the projecting portion is laterally irradiated. There is no vignetting caused by light shielding by the lead pattern, and there is an effect that light extraction loss can be reduced.

以下、本実施形態の発光装置について図1〜図3を参照しながら説明する。   Hereinafter, the light-emitting device of this embodiment will be described with reference to FIGS.

本実施形態の発光装置1は、LEDチップ10と、LEDチップ10が実装された実装基板20と、実装基板20におけるLEDチップ10の実装面側でLEDチップ10を囲む枠体40と、枠体40の内側に透明樹脂材料を充填して形成されてLEDチップ10および当該LEDチップ10に接続されたボンディングワイヤ14,14を封止し且つ弾性を有する封止部50と、封止部50に重ねて配置されるレンズ60と、LEDチップ10から放射された光によって励起されてLEDチップ10の発光色とは異なる色の光を放射する蛍光体を透明材料とともに成形した成形品であってレンズ60の光出射面60b側にレンズ60を覆い光出射面60bおよび枠体40との間に空気層80が形成される形で配設されるドーム状の色変換部材70とを備えている。なお発光装置1は、例えば、グリーンシートからなる絶縁層90を介して金属(例えば、Al、Cuなどの熱伝導率の高い金属)製の器具本体100に実装することで、LEDチップ10から器具本体100までの熱抵抗が小さくなって、放熱性が向上する。従って、LEDチップ10のジャンクション温度の温度上昇を抑制でき、入力電力を大きくできるから、光出力の高出力化を図ることができる。   The light emitting device 1 of the present embodiment includes an LED chip 10, a mounting substrate 20 on which the LED chip 10 is mounted, a frame body 40 that surrounds the LED chip 10 on the mounting surface side of the LED chip 10 on the mounting substrate 20, and a frame body. The LED 40 and the bonding wires 14 and 14 connected to the LED chip 10 are formed by filling a transparent resin material on the inside of the LED 40 and have an elastic sealing part 50; A lens 60 which is formed by molding a transparent material together with a lens 60 arranged in a superimposed manner and a phosphor that emits light of a color different from the emission color of the LED chip 10 when excited by light emitted from the LED chip 10. A dome-shaped color conversion member that covers the lens 60 on the light emitting surface 60b side of 60 and is disposed in such a manner that an air layer 80 is formed between the light emitting surface 60b and the frame body 40. Has a 0 and. The light-emitting device 1 is mounted on the tool body 100 made of metal (for example, a metal having high thermal conductivity such as Al or Cu) via an insulating layer 90 made of, for example, a green sheet. The heat resistance to the main body 100 is reduced, and the heat dissipation is improved. Therefore, since the temperature rise of the junction temperature of the LED chip 10 can be suppressed and the input power can be increased, the light output can be increased.

実装基板20は、LEDチップ10が搭載される金属板21と、金属板21におけるLEDチップ10の非搭載部位に積層されたガラスエポキシ基板からなる絶縁性基材22とで構成される。絶縁性基材22における金属板21と反対側の表面には、LEDチップ10の図示しない両電極(アノード電極およびカソード電極)にそれぞれ電気的に接続される一対のリードパターン23が形成される。また絶縁性基材22においてLEDチップ10に対応する部位に窓孔24が設けられており、窓孔24から露出する金属板21の表面にLEDチップ10が搭載されているので、LEDチップ10で発生した熱は絶縁性基材22を介さずに直接金属板21に伝熱できるようになっている。ここにおいて、金属板21の材料としてはCuWを採用しているが、熱伝導率の比較的高い金属材料であればよく、CuWに限らず、Alなどを採用してもよい。なお、金属板21と絶縁性基材22とは、絶縁性を有するシート状の接着フィルムからなる固着材25により固着されている。また、各リードパターン23は、Ni膜とAu膜との積層膜により構成されており、色変換部材70により覆われていない部位がアウターリード部23aとなっている。   The mounting substrate 20 includes a metal plate 21 on which the LED chip 10 is mounted, and an insulating base material 22 made of a glass epoxy substrate that is laminated on the portion of the metal plate 21 where the LED chip 10 is not mounted. A pair of lead patterns 23 that are electrically connected to both electrodes (anode electrode and cathode electrode) (not shown) of the LED chip 10 are formed on the surface of the insulating substrate 22 opposite to the metal plate 21. Moreover, since the window hole 24 is provided in the site | part corresponding to the LED chip 10 in the insulating base material 22, and the LED chip 10 is mounted on the surface of the metal plate 21 exposed from the window hole 24, the LED chip 10 The generated heat can be directly transferred to the metal plate 21 without passing through the insulating base material 22. Here, although CuW is adopted as the material of the metal plate 21, any metal material having a relatively high thermal conductivity may be used, and not only CuW but also Al or the like may be adopted. In addition, the metal plate 21 and the insulating base material 22 are fixed by a fixing material 25 made of an insulating sheet-like adhesive film. Each lead pattern 23 is composed of a laminated film of a Ni film and an Au film, and a portion not covered with the color conversion member 70 is an outer lead portion 23a.

LEDチップ10は、青色光を放射するGaN系青色LEDチップであり、結晶成長用基板としてサファイア基板に比べて格子定数や結晶構造がGaNに近く且つ導電性を有するn形のSiC基板からなる導電性基板11を用いており、導電性基板11の主表面側にGaN系化合物半導体材料により形成されて例えばダブルへテロ構造を有する積層構造部からなる発光部12がエピタキシャル成長法(例えば、MOVPE法など)により成長され、導電性基板11の裏面に図示しないカソード側の電極であるカソード電極(n電極)が形成され、発光部12の表面(導電性基板11の主表面側の最表面)に図示しないアノード側の電極であるアノード電極(p電極)が形成されている。要するに、LEDチップ10は、一表面側にアノード電極が形成されるとともに他表面側にカソード電極が形成されている。上記カソード電極および上記アノード電極は、Ni膜とAu膜との積層膜により構成してあるが、上記カソード電極および上記アノード電極の材料は特に限定するものではなく、良好なオーミック特性が得られる材料であればよく、例えば、Alなどを採用してもよい。なお、本実施形態では、LEDチップ10の発光部12が導電性基板11よりも金属板21から離れた側となるように金属板21に実装されているが、LEDチップ10の発光部12が導電性基板11よりも金属板21に近い側となるように金属板21に実装するようにしてもよい。光取り出し効率を考えた場合には、発光部12を金属板21から離れた側に配置することが望ましいが、本実施形態では導電性基板11と発光部12とが同程度の屈折率を有しているので、発光部12を金属板21に近い側に配置しても光の取り出し損失が大きくなりすぎることはない。   The LED chip 10 is a GaN-based blue LED chip that emits blue light, and is a conductive substrate made of an n-type SiC substrate that has a lattice constant and a crystal structure close to GaN as a crystal growth substrate and has conductivity compared to a sapphire substrate. The light emitting portion 12 formed of a GaN-based compound semiconductor material and having, for example, a double hetero structure is formed on the main surface side of the conductive substrate 11 by an epitaxial growth method (for example, MOVPE method). ), A cathode electrode (n electrode) which is a cathode side electrode (not shown) is formed on the back surface of the conductive substrate 11, and is shown on the surface of the light emitting unit 12 (the outermost surface on the main surface side of the conductive substrate 11). An anode electrode (p electrode) which is an electrode on the anode side that is not to be formed is formed. In short, the LED chip 10 has an anode electrode formed on one surface side and a cathode electrode formed on the other surface side. The cathode electrode and the anode electrode are composed of a laminated film of a Ni film and an Au film, but the material of the cathode electrode and the anode electrode is not particularly limited, and a material capable of obtaining good ohmic characteristics For example, Al or the like may be employed. In the present embodiment, the light emitting unit 12 of the LED chip 10 is mounted on the metal plate 21 so as to be on the side farther from the metal plate 21 than the conductive substrate 11. The conductive plate 11 may be mounted on the metal plate 21 so as to be closer to the metal plate 21 than the conductive substrate 11. In consideration of the light extraction efficiency, it is desirable to arrange the light emitting unit 12 on the side away from the metal plate 21, but in this embodiment, the conductive substrate 11 and the light emitting unit 12 have the same refractive index. Therefore, even if the light emitting unit 12 is disposed on the side close to the metal plate 21, the light extraction loss does not become too large.

また、金属板21におけるLEDチップ10の実装部位、つまり絶縁性基材22の窓孔24から露出する金属板21の部位には、LEDチップ10側に向かって突出する突台部21aが金属板21と一体に形成されている。突台部21aの平面形状はLEDチップ10のチップサイズよりも大きなサイズの矩形状に形成されており、この突台部21aの表面にLEDチップ10を搭載している。また、突台部21aの表面においてLEDチップ10の非実装部位には金属細線(例えば、金細線、アルミニウム細線など)からなるボンディングワイヤ14の一端が接続され、このボンディングワイヤ14の他端は一方のリードパターン23に接続されているので、LEDチップ10のカソード電極が、突台部21aおよびボンディングワイヤ14を介して一方のリードパターン23に電気的に接続される。またLEDチップ10のアノード電極はボンディングワイヤ14を介して他方のリードパターン23と電気的に接続されている。   Further, a projecting portion 21a that protrudes toward the LED chip 10 is provided on the mounting portion of the LED chip 10 on the metal plate 21, that is, the portion of the metal plate 21 exposed from the window hole 24 of the insulating base material 22. 21 is formed integrally. The planar shape of the protruding portion 21a is formed in a rectangular shape having a size larger than the chip size of the LED chip 10, and the LED chip 10 is mounted on the surface of the protruding portion 21a. Further, one end of a bonding wire 14 made of a thin metal wire (for example, a gold thin wire, an aluminum thin wire, etc.) is connected to the non-mounting portion of the LED chip 10 on the surface of the protruding portion 21a, and the other end of the bonding wire 14 is one side. Therefore, the cathode electrode of the LED chip 10 is electrically connected to one lead pattern 23 via the protruding portion 21 a and the bonding wire 14. The anode electrode of the LED chip 10 is electrically connected to the other lead pattern 23 through the bonding wire 14.

上述の封止部50の透明樹脂材料としては、シリコーン樹脂を用いているが、シリコーン樹脂に限らず、アクリル樹脂などを用いてもよい。   Although the silicone resin is used as the transparent resin material of the sealing portion 50 described above, not only the silicone resin but also an acrylic resin may be used.

これに対して、枠体40は、円筒状の形状であって、透明樹脂の成形品により構成されているが、当該成形品に用いる透明樹脂としては、シリコーン樹脂を採用している。要するに、本実施形態では、封止部50の透明樹脂材料の線膨張率と同等の線膨張率を有する透光性材料により枠体40を形成してある。ここに、本実施形態では、枠体40を実装基板20に固着した後で枠体40の内側に上記透明樹脂材料を充填(ポッティング)して熱硬化させることで封止部50を形成してある。なお、上記透明樹脂材料としてシリコーン樹脂に代えてアクリル樹脂を用いている場合には、枠体40をアクリル樹脂の成形品により構成することが望ましい。   On the other hand, the frame 40 has a cylindrical shape and is formed of a transparent resin molded product, and a silicone resin is used as the transparent resin used in the molded product. In short, in the present embodiment, the frame body 40 is formed of a translucent material having a linear expansion coefficient equivalent to that of the transparent resin material of the sealing portion 50. Here, in this embodiment, after the frame body 40 is fixed to the mounting substrate 20, the sealing resin 50 is formed by filling (potting) the transparent resin material inside the frame body 40 and thermosetting the same. is there. In the case where an acrylic resin is used as the transparent resin material instead of the silicone resin, it is desirable that the frame body 40 be formed of a molded product of acrylic resin.

レンズ60は、封止部50側の光入射面60aおよび光出射面60bそれぞれが凸曲面状に形成された両凸レンズにより構成されている。ここにおいて、レンズ60は、シリコーン樹脂の成形品により構成してあり、封止部50と屈折率が同じ値となっているが、レンズ60は、シリコーン樹脂の成形品に限らず、例えば、アクリル樹脂の成形品により構成してもよい。   The lens 60 is composed of a biconvex lens in which each of the light incident surface 60a and the light emitting surface 60b on the sealing portion 50 side is formed in a convex curved surface shape. Here, the lens 60 is formed of a molded product of silicone resin, and the refractive index is the same as that of the sealing portion 50. However, the lens 60 is not limited to the molded product of silicone resin. You may comprise by the molded article of resin.

ところで、レンズ60は、光出射面60bが、光入射面60aから入射した光を光出射面60bと上述の空気層80との境界で全反射させない凸曲面状に形成されている。ここで、レンズ60は、当該レンズ60の光軸がLEDチップ10の厚み方向に沿った発光部12の中心線上に位置するように配置されている。なお、LEDチップ10の側面から放射された光は封止部50および空気層80を伝搬して色変換部材70まで到達し色変換部材70の蛍光体を励起したり蛍光体には衝突せずに色変換部材70を透過したりする。   By the way, the lens 60 has a light emitting surface 60b formed in a convex curved surface shape that does not totally reflect the light incident from the light incident surface 60a at the boundary between the light emitting surface 60b and the air layer 80 described above. Here, the lens 60 is disposed so that the optical axis of the lens 60 is positioned on the center line of the light emitting unit 12 along the thickness direction of the LED chip 10. The light emitted from the side surface of the LED chip 10 propagates through the sealing portion 50 and the air layer 80 to reach the color conversion member 70 and does not excite the phosphor of the color conversion member 70 or collide with the phosphor. Or the color conversion member 70 is transmitted.

色変換部材70は、シリコーン樹脂のような透明材料とLEDチップ10から放射された青色光によって励起されてブロードな黄色系の光を放射する粒子状の黄色蛍光体とを混合した混合物の成形品により構成されている。したがって、本実施形態の発光装置は、LEDチップ10から放射された青色光と黄色蛍光体から放射された光とが色変換部材70の外面70bを通して放射されることとなり、白色光を得ることができる。なお、色変換部材70の材料として用いる透明材料は、シリコーン樹脂に限らず、例えば、アクリル樹脂、エポキシ樹脂、ガラスなどを採用してもよい。また、色変換部材70の材料として用いる透明材料に混合する蛍光体も黄色蛍光体に限らず、例えば、赤色蛍光体と緑色蛍光体とを混合しても白色光を得ることができる。   The color conversion member 70 is a molded article in which a transparent material such as a silicone resin and a particulate yellow phosphor that emits broad yellow light when excited by the blue light emitted from the LED chip 10 are mixed. It is comprised by. Therefore, in the light emitting device of the present embodiment, the blue light emitted from the LED chip 10 and the light emitted from the yellow phosphor are emitted through the outer surface 70b of the color conversion member 70, and white light can be obtained. it can. Note that the transparent material used as the material of the color conversion member 70 is not limited to the silicone resin, and for example, an acrylic resin, an epoxy resin, glass, or the like may be employed. Further, the phosphor mixed with the transparent material used as the material of the color conversion member 70 is not limited to the yellow phosphor. For example, white light can be obtained by mixing a red phosphor and a green phosphor.

ここで、色変換部材70は、内面70aがレンズ60の光出射面60bに沿った形状に形成されている。したがって、レンズ60の光出射面60bの位置によらず法線方向における光出射面60bと色変換部材70の内面70aとの間の距離が略一定値となっている。なお、色変換部材70は、位置によらず法線方向に沿った肉厚が一様となるように成形されている。色変換部材70は、開口部の周縁を実装基板20に対して、例えば接着剤(例えば、シリコーン樹脂、エポキシ樹脂など)を用いて接着すればよい。   Here, the color conversion member 70 has an inner surface 70 a formed in a shape along the light emitting surface 60 b of the lens 60. Therefore, the distance between the light emitting surface 60b and the inner surface 70a of the color conversion member 70 in the normal direction is a substantially constant value regardless of the position of the light emitting surface 60b of the lens 60. In addition, the color conversion member 70 is shape | molded so that the thickness along a normal line direction may become uniform irrespective of a position. The color conversion member 70 may be bonded to the mounting substrate 20 using, for example, an adhesive (for example, a silicone resin, an epoxy resin, or the like) on the periphery of the opening.

以上説明したように本実施形態の発光装置1では、金属板21におけるLEDチップ10の搭載部位に、LEDチップ10側に突出して先端面にLEDチップ10が搭載される突台部21aを金属板21と一体に設けてあり、当該突台部21aの突出量を絶縁性基材22の厚みとリードパターン23の厚みとを合わせた寸法以上に設定してある。すなわち、金属板21におけるLEDチップ10の搭載部位には突台部21aが形成され、この突台部21aの突出量を、LEDチップ10の非搭載部位に形成された絶縁性基材22の厚みと、絶縁性基材22の表面に形成されたリードパターン23の厚みを合わせた寸法以上に設定しているので、突台部21aに搭載されたLEDチップ10から側方(金属板21の表面と平行な方向)に照射された光が絶縁性基材22やリードパターン23に遮光されてケラレが発生することはなく、光の取り出し損失を低減することができる。   As described above, in the light emitting device 1 according to the present embodiment, the metal plate 21 is provided with the projecting portion 21a on the metal plate 21 where the LED chip 10 is mounted and protruding to the LED chip 10 side. 21, and the protruding amount of the protrusion 21 a is set to be equal to or larger than the combined thickness of the insulating base material 22 and the lead pattern 23. That is, a protruding portion 21 a is formed at the mounting portion of the LED chip 10 on the metal plate 21, and the amount of protrusion of the protruding portion 21 a is determined by the thickness of the insulating base material 22 formed at the non-mounting portion of the LED chip 10. Since the thickness of the lead pattern 23 formed on the surface of the insulating base material 22 is set to be equal to or larger than the dimension, the LED chip 10 mounted on the projecting portion 21a is lateral (the surface of the metal plate 21). The light irradiated in the direction parallel to the light is not shielded by the insulating base material 22 or the lead pattern 23, and vignetting does not occur, and the light extraction loss can be reduced.

なお、本発明の精神と範囲に反することなしに、広範に異なる実施形態を構成することができることは明白なので、この発明は、特定の実施形態に制約されるものではない。   It should be noted that a wide variety of different embodiments can be configured without departing from the spirit and scope of the present invention, and the present invention is not limited to a specific embodiment.

実施形態を示す概略断面図である。It is a schematic sectional drawing which shows embodiment. 同上を示し、一部破断した概略分解斜視図である。It is a general | schematic disassembled perspective view which showed the same and partially fractured | ruptured. 同上を示す要部概略平面図である。It is a principal part schematic plan view which shows the same as the above.

符号の説明Explanation of symbols

1 発光装置
10 LEDチップ
20 実装基板
21 金属板
21a 突台部
22 絶縁性基材
23 リードパターン
DESCRIPTION OF SYMBOLS 1 Light-emitting device 10 LED chip 20 Mounting board 21 Metal plate 21a Protrusion part 22 Insulating base material 23 Lead pattern

Claims (1)

LEDチップと、LEDチップが搭載された実装基板と、透明樹脂の成形品からなり実装基板におけるLEDチップの実装面側でLEDチップを囲む枠体と、枠体の内側に透明樹脂材料を充填して形成されLEDチップを封止する封止部と、封止部に重ねて配置されたレンズと、前記LEDチップからの照射光により励起されて前記LEDチップの発光色とは異なる色の光を発する蛍光体を透明材料とともに成形したドーム状の成形品であってレンズの光出射面および枠体の周囲との間に、光出射面と内面との距離が略一定となるように空気層を設けた状態で前記実装面に配置される色変換部材とを備え、前記実装基板は、LEDチップが搭載される金属板と、金属板におけるLEDチップの非搭載部位に積層され、金属板と反対側の表面にLEDチップの電極に電気的に接続されるリードパターンが形成された絶縁性基材とからなり、金属板におけるLEDチップの実装部位に、LEDチップ側に突出して先端面にLEDチップが搭載される突台部を設け、当該突台部の突出量を絶縁性基材の厚みとリードパターンの厚みとを合わせた寸法以上に設定したことを特徴とする発光装置。 An LED chip, a mounting substrate on which the LED chip is mounted, a frame made of a transparent resin molded product and surrounding the LED chip on the mounting surface side of the LED chip on the mounting substrate, and a transparent resin material filled inside the frame A sealing portion that seals the LED chip formed, a lens that is placed on the sealing portion, and a light that is excited by irradiation light from the LED chip and has a color different from the emission color of the LED chip. A dome-shaped molded product in which a phosphor that emits light is molded together with a transparent material, and an air layer is provided between the light emitting surface of the lens and the periphery of the frame so that the distance between the light emitting surface and the inner surface is substantially constant. A color conversion member disposed on the mounting surface in a provided state, and the mounting substrate is stacked on a metal plate on which the LED chip is mounted, and on the non-mounting portion of the LED chip on the metal plate, opposite to the metal plate On the side surface It consists of an insulating base material on which a lead pattern electrically connected to the electrode of the ED chip is formed, and the LED chip is mounted on the tip surface of the metal plate protruding from the LED chip side on the mounting part of the LED chip. A light emitting device characterized in that a projecting part is provided, and the projecting amount of the projecting part is set to be equal to or larger than the combined thickness of the insulating base material and the lead pattern.
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