JP4830280B2 - Radiation image conversion panel manufacturing apparatus and radiation image conversion panel manufacturing method - Google Patents

Description

  The present invention relates to a radiation image conversion panel, and more particularly, to a manufacturing apparatus for a radiation image conversion panel in which a photostimulable phosphor layer is formed and a method for manufacturing the radiation image conversion panel.

  Conventionally, as a method for obtaining a radiation image without using a silver salt, a radiation image conversion panel in which a photostimulable phosphor layer is formed on a support has been developed. The radiation image conversion panel can cause the stimulable phosphor layer to absorb the radiation transmitted through the subject and accumulate radiation energy corresponding to the radiation transmission density of each part of the subject. Thereafter, the stimulable phosphor is excited in time series by electromagnetic waves (excitation light) such as visible light and infrared rays, thereby releasing the radiation energy accumulated in the stimulable phosphor as stimulated emission. The signal based on the intensity of light can be converted into an electric signal by photoelectric conversion, for example, and can be reproduced as a visible image on a recording material such as a silver halide photographic material or a display device such as a CRT.

  Such a radiation image conversion panel is manufactured by forming a photostimulable phosphor layer on a support by a vapor deposition method or the like. As the stimulable phosphor, a material obtained by activating Eu based on an alkali halide such as CsBr is used. In particular, by using Eu as an activator, improvement of X-ray conversion efficiency, which has been impossible in the past, has been achieved. It is supposed to be possible.

  Further, it is known that there is a correlation between the activator concentration and the luminance, and the sensitivity of the radiographic image increases as the activator concentration increases. The sensitivity of the radiographic image is saturated at an activator concentration that allows the excitation light to enter the photostimulable phosphor layer and release the accumulated energy during image reading. Therefore, the nonuniformity of sensitivity appears as the activator concentration is non-uniform.

Therefore, in order to make the concentration of the activator in the stimulable phosphor layer uniform and suppress the sensitivity unevenness of the radiographic image, the matrix component and the activator component of the stimulable phosphor are used as separate evaporation sources, respectively, 2. Description of the Related Art A radiation image conversion panel manufacturing apparatus that irradiates and evaporates a line is known (Patent Document 1). According to the radiation image conversion panel manufacturing apparatus of Patent Document 1, even when the deposition rate of the activator component varies greatly during deposition, the voltage of the electron beam is controlled to adjust the deposition rate of the activator component. Thus, the activator concentration can be made uniform.
JP 2003-194999 A

  However, in the radiation image conversion panel manufacturing apparatus of Patent Document 1, since the amount of the activator component is very small, the crystals of the photostimulable phosphor may be uneven. In addition, there is a problem in that the activator component is not taken into the stimulable phosphor layer even if the matrix component and the activator component of the stimulable phosphor are evaporated simultaneously from different evaporation sources.

  In addition, even when the activator concentration is uniform, if the deposition is performed so that the crystallinity of the stimulable phosphor evaporated from each evaporation source is uniform, the sensitivity unevenness of the stimulable phosphor layer is reduced. However, in Patent Document 1, no consideration is given to the arrangement of each evaporation source and the distance between the evaporation source and the support. Furthermore, neither vapor deposition efficiency nor film thickness distribution was described.

  The present invention has been made in view of such a point, and while making the crystallinity of the photostimulable phosphor uniform, it is possible to achieve both improvement in deposition efficiency and improvement in film thickness distribution, and there is no sensitivity unevenness. An object of the present invention is to provide a radiographic image conversion panel manufacturing apparatus and a radiographic image conversion panel manufacturing method capable of obtaining a highly sharp radiographic image.

In order to solve such a problem, the invention of claim 1 is a manufacturing apparatus of a radiation image conversion panel, comprising a vacuum vessel, a support holder provided in the vacuum vessel and rotating in a horizontal direction, One support body held by the support body holder so that the center thereof coincides with the rotation center of the support body holder, and a predetermined distance from the center line perpendicular to the support body, and parallel to the support body In the plane, phosphors of the same type represented by the following general formula (1) are arranged on at least one of the straight lines radially extending from the center line and formed by mixing phosphor materials. Each of which includes three or more evaporation sources that evaporate the phosphor and deposit the phosphor on the support so that the thickness distribution of the phosphor layer is 10% or less. And each of the three or more evaporation sources The distance between is characterized by a 100Mm～1500mm.
General formula (1)
M ¹ X · aM ² X ' ₂ · bM ³ X " ₃ : eA
[Wherein, M ¹ is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M ² is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M ³ is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

According to the invention of claim 1, by providing a plurality of evaporation sources, the overlapping portions of the vapor flows of the evaporation sources are rectified, and the crystallinity of the phosphor deposited on the surface of the support becomes uniform. Further, the plurality of evaporation sources are separated from a center line perpendicular to the support by a predetermined distance, and on a plane parallel to the support, on at least one straight line radially extending from the center line in the horizontal direction. Since the plurality of evaporation sources are arranged at a narrow interval from each other, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, the distance between the evaporation source and the support The characteristics of the phosphor are not deteriorated even if they are brought closer to each other. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source and the support. Such a tendency becomes more prominent as a large number of vapor deposition sources are provided. Further, since the plurality of evaporation sources are arranged on a straight line, the film thickness distribution on the surface of the support can be made constant. Thereby, the sensitivity nonuniformity of a fluorescent substance layer can be reduced and the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved.

Further, in the present invention, the interval between the evaporation sources is narrow, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, so that the variation in the incident angle of the phosphor reaching the support is small, Crystallinity becomes uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support on which the phosphor layer is formed and the incident direction of the phosphor .

Invention of Claim 2 is a manufacturing apparatus of the radiation image conversion panel of Claim 1, Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said vapor deposition source. A rotation mechanism is provided.

According to the second aspect of the present invention, the phosphor can be uniformly deposited on the entire surface of the support by performing the vapor deposition of the phosphor while rotating the support by the support rotating mechanism.
According to a third aspect of the present invention, a distance between a center line perpendicular to the support and each of the three or more evaporation sources is 100 mm to 1500 mm.

According to a fourth aspect of the present invention, there is provided a method for manufacturing a radiographic image conversion panel, wherein a support body that rotates in a horizontal direction in a vacuum vessel has a single support body whose center coincides with a rotation center of the support body holder. And at least one straight line radially extending from the center line in a plane parallel to the support at a predetermined distance from a center line perpendicular to the support. And a step of disposing three or more evaporation sources for evaporating the phosphor, each containing the same type of phosphor represented by the following general formula (1), which is a mixture composition of phosphor materials : Forming the phosphor layer by vapor-depositing the phosphor evaporating from three or more evaporation sources on the support so that the thickness distribution of the phosphor layer is 10% or less. And each of the three or more evaporation sources Characterized by a 100mm~1500mm the distance between.
General formula (1)
M ¹ X · aM ² X ' ₂ · bM ³ X " ₃ : eA
[Wherein, M ¹ is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M ² is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M ³ is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

According to the invention of claim 4, by providing a plurality of evaporation sources, the overlapping portions of the vapor flows of the evaporation sources are rectified, and the crystallinity of the phosphor deposited on the surface of the support becomes uniform. Further, the plurality of evaporation sources are separated from a center line perpendicular to the support by a predetermined distance, and on a plane parallel to the support, on at least one straight line radially extending from the center line in the horizontal direction. Since the plurality of evaporation sources are arranged at a narrow interval from each other, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, the distance between the evaporation source and the support The characteristics of the phosphor are not deteriorated even if they are brought closer to each other. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source and the support. Such a tendency becomes more prominent as a large number of vapor deposition sources are provided. Further, since the plurality of evaporation sources are arranged on a straight line, the film thickness distribution on the surface of the support can be made constant. Thereby, the sensitivity nonuniformity of a fluorescent substance layer can be reduced and the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved.

Further, in the present invention, the interval between the evaporation sources is narrow, and the vapor flow of the evaporation source is deposited near the upper part of each evaporation source in the support, so that the variation in the incident angle of the phosphor reaching the support is small, Crystallinity becomes uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support on which the phosphor layer is formed and the incident direction of the phosphor .

Invention of Claim 5 is a manufacturing method of the radiographic image conversion panel of Claim 4 , Comprising: The said support body holder rotates the said support body when vapor-depositing the said fluorescent substance from the said vapor deposition source. A rotation mechanism is provided.

According to the invention of claim 5, the phosphor can be uniformly deposited on the entire surface of the support by performing the deposition of the phosphor while rotating the support by the support rotating mechanism.
The invention according to claim 6 is characterized in that a distance between a center line perpendicular to the support and each of the three or more evaporation sources is 100 mm to 1500 mm.

According to the present invention , the crystallinity of the phosphor is made uniform, the vapor deposition efficiency is improved and the film thickness distribution is improved at the same time, the sensitivity unevenness of the phosphor layer is reduced, and the radiation image conversion panel can be obtained. The sharpness of the radiation image can be improved.
Further, since the variation of the angle of incidence of the phosphor I by the narrowing the spacing of a plurality of evaporation sources is reduced, and the shutter and the shield plate for shielding the phosphor to reach the support at a predetermined incident angle Without providing it separately, the crystallinity can be made uniform and the sharpness of the radiation image can be improved.

Moreover , the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved by depositing a fluorescent substance uniformly on the whole surface of a support body.

In addition , the crystallinity of the phosphor is made uniform, the deposition efficiency is improved and the film thickness distribution is improved at the same time, the sensitivity variation of the phosphor layer is reduced, and the radiation image obtained from the radiation image conversion panel is sharpened. Can be improved.
Further, since the variation of the angle of incidence of the phosphor I by the narrowing the spacing of a plurality of evaporation sources is reduced, and the shutter and the shield plate for shielding the phosphor to reach the support at a predetermined incident angle Without providing it separately, the crystallinity can be made uniform and the sharpness of the radiation image can be improved.

Moreover , the sharpness of the radiographic image obtained from a radiographic image conversion panel can be improved by depositing a fluorescent substance uniformly on the whole surface of a support body.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  First, the radiation image conversion panel manufacturing apparatus 1 according to the present invention will be described.

  As shown in FIG. 1, the radiation image conversion panel manufacturing apparatus 1 includes a vacuum container 2, and the vacuum container 2 includes a vacuum pump 3 that evacuates the inside of the vacuum container 2 and introduces the atmosphere. .

  A support holder 5 that holds the support 4 is provided in the vicinity of the upper surface inside the vacuum vessel 2.

  The support 4 can be arbitrarily selected from known materials as a support for a conventional radiation image conversion panel, and the support 4 of the present embodiment is made of quartz glass sheet, aluminum, iron, tin, chromium, or the like. A metal sheet or a carbon fiber reinforced sheet is preferred.

  Moreover, the support body 4 may have a resin layer in order to make the surface smooth. The resin layer preferably contains a compound such as polyimide, polyethylene phthalate, paraffin, graphite, and the film thickness is preferably about 5 μm to 50 μm. This resin layer may be provided on the front surface of the support 4 or on the back surface.

Moreover, as means for providing an adhesive layer on the surface of the support 4, there are means such as a bonding method and a coating method. Among these, the bonding method is performed using heating and a pressure roller, the heating condition is about 80 to 150 ° C., the pressing condition is 4.90 × 10 to 2.94 × 10 ² N / cm, and the conveyance speed is 0.1. -2.0 m / s is preferable.

  A photostimulable phosphor layer is formed on the surface of the support 4 by a vapor deposition method. As the vapor deposition method, a vapor deposition method, a sputtering method, a CVD method, an ion plating method, or the like can be used. In the present invention, the vapor deposition method is particularly preferable.

  Here, the stimulable phosphor layer according to the present invention preferably contains a stimulable phosphor represented by the following general formula (1).

General formula (1)
M ¹ X · aM ² X ' ₂ · bM ³ X " ₃ : eA
[Wherein, M ¹ is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M ² is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M ³ is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]

In the photostimulable phosphor represented by the general formula (1), M ¹ represents at least one alkali metal atom selected from each atom such as Na, K, Rb and Cs. At least one alkaline earth metal atom selected from each atom is preferred, and a Cs atom is more preferred.

M ² represents at least one divalent metal atom selected from atoms such as Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu, and Ni, and among these, Be, It is a divalent metal atom selected from each atom such as Mg, Ca, Sr and Ba.

M ³ is selected from atoms such as Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Al, Ga, and In. Although it represents at least one trivalent metal atom, among them, a trivalent metal atom selected from each atom such as Y, Ce, Sm, Eu, Al, La, Gd, Lu, Ga and In is preferred. It is.

  A is at least one selected from each atom of Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu, and Mg. It is a seed metal atom. Of these, Eu atoms are preferred.

  From the viewpoint of improving the photostimulable emission brightness of the photostimulable phosphor, X, X ′ and X ″ represent at least one halogen atom selected from F, Cl, Br and I atoms. At least one halogen atom selected from Br is preferable, and a Br atom is more preferable.

In the general formula (1), the b value is 0 ≦ b <0.5, and preferably 0 ≦ b <10 ⁻² .

  The photostimulable phosphor represented by the general formula (1) of the present invention is produced by the method described below using, for example, phosphor materials shown in the following (a) to (c).

  (A) At least one compound selected from NaF, NaCl, NaBr, NaI, KF, KCl, KBr, KI, RbF, RbCl, RbBr, RbI, CsF, CsCl, CsBr and CsI is used.

_{(B) MgF 2, MgCl 2} , MgBr 2, MgI 2, CaF 2, CaCl 2, CaBr 2, CaI 2, SrF 2, SrCl 2, SrBr 2, SrI 2, BaF 2, BaCI 2, BaBr 2, BaBr 2 2H ₂ O, BaI ₂ , ZnF ₂ , ZnCl ₂ , ZnBr ₂ , ZnI ₂ , CdF ₂ , CdCl ₂ , CdBr ₂ , CdI ₂ , CuF ₂ , CuCl ₂ , CuBr ₂ , CuI, NiF ₂ , NiCl ₂ , NiBr _At least one or two or more compounds selected from ₂ and NiI ₂ compounds are used.

  (C) In the general formula (1), Eu, Tb, In, Cs, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu And a compound having a metal atom selected from each atom such as Mg.

The phosphor materials (a) to (c) are weighed so as to have a mixed composition in the above numerical range, and are dissolved with pure water.
At this time, the mixture may be sufficiently mixed using a mortar, ball mill, mixer mill or the like.

  Next, a predetermined acid is added so that the pH value C of the obtained aqueous solution is adjusted to 0 <C <7, and then water is evaporated.

  Next, the obtained raw material mixture is filled in a heat-resistant container such as a quartz crucible or an alumina crucible and fired in an electric furnace. The firing temperature is preferably 500 to 1000 ° C. The firing time varies depending on the filling amount of the raw material mixture, the firing temperature, etc., but is preferably 0.5 to 6 hours.

  The firing atmosphere includes a nitrogen gas atmosphere containing a small amount of hydrogen gas, a weak reducing atmosphere such as a carbon dioxide gas atmosphere containing a small amount of carbon monoxide, a neutral atmosphere such as a nitrogen gas atmosphere and an argon gas atmosphere, or a small amount of oxygen gas. A weak oxidizing atmosphere is preferred.

  After firing once under the aforementioned firing conditions, the fired product is taken out from the electric furnace and pulverized, and then the fired product powder is again filled in a heat-resistant container and placed in the electric furnace, and again under the same firing conditions as described above. If the firing is performed, the luminous brightness of the photostimulable phosphor can be further increased, and when the fired product is cooled to the room temperature from the firing temperature, the fired product is taken out of the electric furnace and allowed to cool in the air. Although the desired photostimulable phosphor can be obtained, it may be cooled in the same weakly reducing atmosphere or neutral atmosphere as in the firing.

  In addition, the fired product is moved from the heating part to the cooling part in an electric furnace and rapidly cooled in a weakly reducing atmosphere, neutral atmosphere or weakly oxidizing atmosphere, so that the luminous phosphors emitted from the resulting stimulable phosphor are emitted. It is preferable because the brightness of the exhaust light can be further increased.

  Further, if necessary, a protective layer for physically or chemically protecting the photostimulable phosphor layer may be provided on the surface of the photostimulable phosphor layer opposite to the support. . The protective layer may be formed by directly applying a coating solution for the protective layer to the surface of the photostimulable phosphor layer, or a protective layer separately formed in advance may be adhered to the photostimulable phosphor layer. .

  Materials for the protective layer include cellulose acetate, nitrocellulose, polymethyl methacrylate, polyvinyl butyral, polyvinyl formal, polycarbonate, polyester, polyethylene terephthalate, polyethylene, polyvinylidene chloride, nylon, polytetrafluoroethylene, polytrifluoride-chloride. Usual protective layer materials such as ethylene, ethylene tetrafluoride-hexafluoropropylene copolymer, vinylidene chloride-vinyl chloride copolymer, vinylidene chloride-acrylonitrile copolymer are used. In addition, a transparent glass substrate can be used as the protective layer.

  The support holder 5 is configured to hold the support 4 so that the surface of the support 4 on which the photostimulable phosphor layer is formed is parallel to the bottom surface of the vacuum vessel 2.

  The support holder 5 is preferably provided with a heater (not shown) for heating the support 4. By heating the support 4 with this heater, the adhesion of the support 4 to the support holder 5 is enhanced and the film quality of the stimulable phosphor layer is adjusted. Further, the adsorbate on the surface of the support 4 is removed and removed, and an impurity layer is prevented from being generated between the surface of the support 4 and the photostimulable phosphor.

  Moreover, you may have a mechanism (not shown) for circulating a heating medium or a heating medium as a heating means. This means is suitable when vapor deposition is performed while maintaining the temperature of the support 4 at a relatively low temperature of 50 to 150 ° C. during the deposition of the stimulable phosphor.

  Further, the support holder 5 is provided with a support rotating mechanism 6 that rotates the support 4 in the horizontal direction. The support rotating mechanism 6 supports the support holder 5 and rotates the support 4 and a motor (not shown) that is disposed outside the vacuum vessel 2 and serves as a drive source for the support rotating shaft 7. Z).

  Also, as shown in FIG. 1, a plurality of evaporation sources 8 are arranged on one straight line extending radially from the center of the support 4 near the bottom surface inside the vacuum vessel 2. In this case, the distance between the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm. The distance between the center line perpendicular to the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm.

  In the radiation image conversion panel manufacturing apparatus of the present invention, the evaporation source 8 may be arranged on a plurality of straight lines extending radially from the center of the support 4. It is also possible to provide a large number of three or more evaporation sources 8. Each evaporation source 8 may be arranged at equal intervals or at different intervals.

  Since the evaporation source 8 contains a stimulable phosphor and is heated by a resistance heating method, the evaporation source 8 may be composed of an alumina crucible around which a heater is wound, or may be composed of a boat or a heater made of a refractory metal. May be. In addition to the resistance heating method, the stimulable phosphor may be heated by an electron beam or a high frequency induction method. However, in the present invention, it is easy to handle with a relatively simple structure and is inexpensive. In addition, the resistance heating method is preferable because it can be applied to a large number of substances. The evaporation source 8 may be a molecular beam source by a molecular source epitaxial method.

  Further, a shutter 9 that blocks a space from the evaporation source 8 to the support 4 is provided between each evaporation source 8 and the support 4 so as to be openable and closable in the horizontal direction. It is possible to prevent substances other than the target substance attached to the surface of the photostimulable phosphor in the source 8 from being evaporated in the initial stage of vapor deposition and adhering to the support 4.

  Next, the radiographic image conversion panel manufacturing method of the present invention using the radiographic image conversion panel manufacturing apparatus 1 described above will be described.

  First, the support 4 is attached to the support holder 5.

  A plurality of evaporation sources 8 are arranged on a straight line extending radially from the center of the support 4 near the bottom surface of the vacuum vessel 2. In this case, the distance between the support 4 and the evaporation source 8 is preferably 100 mm to 1500 mm, more preferably 200 mm to 1000 mm. Moreover, it is preferable that the space | interval of the centerline perpendicular | vertical to the horizontal direction of the support body 4 and the evaporation source 8 shall be 100 mm-1500 mm, More preferably, it is 200 mm-1000 mm.

  Next, the inside of the vacuum vessel 2 is evacuated and adjusted to a desired degree of vacuum. Thereafter, the support holder 5 is rotated with respect to the evaporation source 8 by the support rotation mechanism 6, and when the vacuum container 2 reaches a vacuum degree capable of vapor deposition, the stimulable phosphor is evaporated from the heated evaporation source 8. Then, a stimulable phosphor is grown on the surface of the support 4 to a desired thickness.

  Note that the photostimulable phosphor layer can be formed by performing the step of growing the photostimulable phosphor on the surface of the support 4 in a plurality of times.

  In the vapor deposition method, the vapor-deposited body (support 4, protective layer, or intermediate layer) may be cooled or heated as necessary during vapor deposition.

Further, the stimulable phosphor layer may be heat-treated after the vapor deposition. In the vapor deposition method, reactive vapor deposition may be performed in which vapor deposition is performed by introducing a gas such as O ₂ or H ₂ as necessary.

  The film thickness of the photostimulable phosphor layer to be formed is 50 μm to 2000 μm, preferably from the viewpoint of obtaining the effects of the present invention, although it varies depending on the intended use of the radiation image conversion panel and the type of stimulable phosphor. It is 50 micrometers-1000 micrometers, More preferably, they are 100 micrometers-800 micrometers.

  In addition, the temperature of the support 4 on which the photostimulable phosphor layer is formed is preferably set to room temperature (rt) to 300 ° C, more preferably 50 to 200 ° C.

  After the photostimulable phosphor layer is formed as described above, if necessary, the photostimulable phosphor layer is physically or chemically photostimulated on the surface of the photostimulable phosphor layer on the side opposite to the support 4. A protective layer for protecting the phosphor layer may be provided. The protective layer may be formed by directly applying a coating solution for the protective layer onto the surface of the photostimulable phosphor layer, or by adhering a separately formed protective layer to the photostimulable phosphor layer. Good. The thickness of these protective layers is preferably 0.1 μm to 2000 μm.

The protective layer may be formed by laminating inorganic substances such as SiC, SiO ₂ , SiN, Al ₂ O ₃ by vapor deposition or sputtering.

  According to the radiation image conversion panel manufacturing apparatus 1 or manufacturing method described above, by providing the plurality of evaporation sources 8, the overlapping portions of the vapor flows of the respective evaporation sources 8 are rectified and deposited on the surface of the support 4. The crystallinity of the photostimulable phosphor becomes uniform. Further, since the plurality of evaporation sources 8 are arranged on a straight line extending radially from the center of the support 4, the plurality of evaporation sources 8 are arranged at a narrow interval, and the vapor flow of the evaporation source 8 is supported. Since the vapor deposition is performed near the upper part of each evaporation source 8 in the body 4, the characteristics of the stimulable phosphor are not deteriorated even if the distance between the evaporation source 8 and the support 4 is reduced. Therefore, the evaporation efficiency can be increased by reducing the distance between the evaporation source 8 and the support 4. Such a tendency becomes more prominent as a larger number of vapor deposition sources 8 are provided. Further, since the plurality of evaporation sources 8 are arranged on a straight line, the film thickness distribution on the surface of the support 4 can be made constant. Thereby, the sensitivity unevenness of the photostimulable phosphor layer can be reduced, and the sharpness of the radiation image obtained from the radiation image conversion panel can be improved.

  Further, in the present embodiment, the interval between the evaporation sources 8 is narrow, and the vapor flow of the evaporation source 8 is deposited near the upper portion of each evaporation source 8 in the support 4, so that the photostimulable fluorescence that reaches the support 4 is achieved. There is little variation in the incident angle of the body, and the crystallinity is uniform. Such a tendency becomes more prominent as a larger number of vapor deposition sources are provided. Here, the incident angle refers to an acute angle θ formed by the surface of the support 4 on which the stimulable phosphor layer is formed and the incident direction of the stimulable phosphor.

  Furthermore, the stimulable phosphor can be uniformly deposited on the entire surface of the support 4 by depositing the stimulable phosphor while rotating the support 4 by the support rotating mechanism 6.

As described above, according to the radiation image conversion panel manufacturing apparatus 1 or the manufacturing method of the present invention, the crystallinity of the photostimulable phosphor is made uniform, and the improvement of the deposition efficiency and the improvement of the film thickness distribution are made compatible. Thus, the sensitivity unevenness of the photostimulable phosphor layer can be reduced, and the sharpness of the radiation image obtained from the radiation image conversion panel can be improved.
Further, since the variation in the incident angle of the stimulable phosphor is reduced by narrowing the interval between the plurality of evaporation sources 8, the shielding for shielding the stimulable phosphor that reaches the support 4 at a predetermined incident angle. Without providing a plate or the like separately from the shutter, the crystallinity can be made uniform and the sharpness of the radiation image can be improved.

  In addition, although the above demonstrated the case where the support body holder 5 was equipped with the support body rotation mechanism 6, this embodiment is not necessarily restricted to this, It vapor-deposits in the state which the support body holder 5 hold | maintained the support body 4 and was still. The present invention can also be applied to the case where the photostimulable phosphor from the evaporation source 8 is deposited by moving the support 4 in the horizontal direction with respect to the evaporation source 8.

  EXAMPLES Hereinafter, although an Example is given and this invention is demonstrated concretely, the embodiment of this invention is not limited to this.

[Example 1]
(Production of radiation image conversion panel)
A photostimulable phosphor layer was formed by vapor-depositing a photostimulable phosphor (CsBr: 0.0005Eu) on one side of a support made of aluminum.
That is, first, a support was placed on a support holder provided with a support rotation mechanism. Next, the resistance heating crucible was filled with the phosphor raw material as an evaporation material, and the two resistance heating crucibles were arranged on the straight line extending radially from the center of the support near the bottom surface inside the vacuum vessel. At this time, the distance between the support and the evaporation source was adjusted to 200 mm, and the distance between the center line perpendicular to the support and the evaporation source was adjusted to 300 mm. Subsequently, the inside of the vacuum vessel was once evacuated, Ar gas was introduced and the degree of vacuum was adjusted to 0.1 Pa, and then the temperature of the support was maintained at 100 ° C. while rotating the support at a speed of 10 rpm. Next, the resistance heating crucible was heated to deposit the stimulable phosphor, and the deposition was terminated when the thickness of the stimulable phosphor layer reached 500 μm.
Next, the stimulable phosphor layer was placed in a protective layer bag in dry air to obtain a radiation image conversion panel having a structure in which the stimulable phosphor layer was sealed.

[Example 2]
A radiation image conversion panel was obtained with the number of evaporation sources of Example 1 being three.

[Comparative Example 1]
As shown in FIG. 2, the radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one and setting the distance between the evaporation sources and the support to 800 mm.

[Comparative Example 2]
A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one and setting the distance between the evaporation source and the support to 400 mm.

[Comparative Example 3]
A radiation image conversion panel was obtained by setting the number of evaporation sources in Example 1 to one.
And the following evaluation was performed about the radiographic image conversion panel obtained as mentioned above.

<Vapor deposition efficiency>
The vapor deposition efficiency indicates the ratio of the photostimulable phosphor deposited on the support in the photostimulable phosphor material filled in the evaporation source. The deposition efficiency was calculated by the following formula (2).

<Thickness distribution>
The film thickness distribution is an index value indicating the degree of variation in the film thickness of the photostimulable phosphor in the photostimulable phosphor layer. The film thickness distribution was calculated by the following formula (3) by measuring the maximum film thickness D _Max and the minimum film thickness D _min in the photostimulable phosphor layer.

<Sharpness>
A CTF chart is attached to the radiation image conversion panel, and X-rays having a tube voltage of 80 kVP-P are irradiated with 10 mR (distance from the tube to the radiation image conversion panel: 1.5 m), and then semiconductor laser light (oscillation wavelength: 780 nm). , Beam diameter: 100 μm) and stimulated excitation, CTF chart image is read as stimulated emission emitted from the stimulable phosphor layer, and photoelectrically converted by a photodetector (photomultiplier tube). Got a signal. Based on this signal value, the modulation transfer function (MTF) of the image was examined. Then, when the number of evaporation sources in Example 1 is one and the distance between the evaporation source and the support is 800 mm (Comparative Example 1), the value is shown as a relative value. MTF is a value when the spatial frequency is 1 cycle / mm.

  As can be seen from the results in Table 1, when the distance between the evaporation source and the support is 200 mm and the number of evaporation sources is two in Example 1, the deposition efficiency is 12, the sharpness is 110, and the film The thickness distribution is 12%. In comparison example 1, when the distance between the evaporation source and the support is 800 mm and the number of evaporation sources is 1, the deposition efficiency is 5, sharpness 100, and the film thickness distribution is 15%. The deposition efficiency is improved by reducing the distance between the evaporation source and the support, the sharpness is improved even when the distance between the evaporation source and the support is reduced, and the film thickness is increased by increasing the number of evaporation sources. It can be seen that the distribution is improved.

  Further, when the number of evaporation sources is 3 in Example 2, the deposition efficiency is 15, the sharpness is 121, and the film thickness distribution is 10%. When the number of evaporation sources is increased, the deposition efficiency, the sharpness, and the film are increased. It can be seen that the thickness distribution is further improved.

  On the other hand, when the distance between the evaporation source and the support is made closer to 400 m with the number of evaporation sources being one in Comparative Example 2, the distance between the evaporation source and the support is made closer than in Comparative Example 1. As a result, the deposition efficiency is improved, but the sharpness is lowered to 90, and the film thickness distribution is also deteriorated to 21%.

  Further, when the distance between the evaporation source and the support is made closer to 200 m with the number of evaporation sources being one in Comparative Example 3, the distance between the evaporation source and the support is made closer than in Comparative Example 1. Although the vapor deposition efficiency is further improved as compared with Comparative Example 2, it is understood that the sharpness is further lowered to 80 and the film thickness distribution is further deteriorated to 32%.

  That is, by arranging a plurality of evaporation sources on a straight line extending radially from the center of the support, it is possible to improve the vapor deposition efficiency and the film thickness distribution, and to reduce the distance between the evaporation source and the support. It was also shown that sharpness is improved.

It is sectional drawing which shows the manufacturing apparatus of the radiographic image conversion panel of this invention. It is sectional drawing which shows the manufacturing apparatus of the radiographic image conversion panel of the comparative example 1.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Radiation image conversion panel manufacturing apparatus 2 Vacuum container 3 Vacuum pump 4 Support body 5 Support body holder 6 Support body rotation mechanism 7 Support body rotation shaft 8 Evaporation source 9 Shutter

Claims (6)

A vacuum vessel;
A support holder provided in the vacuum vessel and rotating in a horizontal direction;
One support body held by the support body holder so that the center thereof coincides with the rotation center of the support body holder;
The phosphor raw material is disposed on at least one straight line radially extending from the center line in a plane parallel to the support at a predetermined distance from a center line perpendicular to the support. Each of the phosphors of the same type represented by the following general formula (1), and the support is so formed that the phosphor is evaporated and the thickness distribution of the phosphor layer is 10% or less. Three or more evaporation sources for depositing the phosphor on the body;
With
The apparatus for manufacturing a radiation image conversion panel, wherein a distance between the support and each of the three or more evaporation sources is 100 mm to 1500 mm.
General formula (1)
M ¹ X · aM ² X ' ₂ · bM ³ X " ₃ : eA
[Wherein, M ¹ is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M ² is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M ³ is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]   The apparatus for manufacturing a radiation image conversion panel according to claim 1, wherein the support holder includes a support rotating mechanism that rotates the support when the phosphor is deposited from the deposition source. .   The apparatus for manufacturing a radiation image conversion panel according to claim 1 or 2, wherein a distance between a center line perpendicular to the support and each of the three or more evaporation sources is 100 mm to 1500 mm. In the vacuum vessel, holding a single support on a support holder that rotates in the horizontal direction so that the center thereof coincides with the rotation center of the support holder;
A phosphor material is mixed on at least one straight line radially extending from the center line in a plane parallel to the support at a predetermined distance from the center line perpendicular to the support. A step of disposing three or more evaporation sources each comprising the same type of phosphor that is composed and represented by the following general formula (1), and evaporating the phosphor;
Depositing the phosphor evaporating from the three or more evaporation sources on the support so that the thickness distribution of the phosphor layer is 10% or less to form a phosphor layer;
With
A method for producing a radiation image conversion panel, wherein a distance between the support and each of the three or more evaporation sources is set to 100 mm to 1500 mm.
General formula (1)
M ¹ X · aM ² X ' ₂ · bM ³ X " ₃ : eA
[Wherein, M ¹ is at least one alkali metal atom selected from Li, Na, K, Rb and Cs atoms, and M ² is Be, Mg, Ca, Sr, Ba, Zn, Cd, Cu. And at least one divalent metal atom selected from each atom of Ni, and M ³ is Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, At least one trivalent metal atom selected from each atom of Tm, Yb, Lu, Al, Ga and In, and X, X ′ and X ″ are at least selected from each atom of F, Cl, Br and I 1 type of halogen atom, A is Eu, Tb, In, Ce, Tm, Dy, Pr, Ho, Nd, Yb, Er, Gd, Lu, Sm, Y, Tl, Na, Ag, Cu and Mg. At least one metal atom selected from each atom, and , B, e each represent a number between 0 ≦ a <0.5,0 ≦ b <0.5,0 <e <1.0.]   The method of manufacturing a radiation image conversion panel according to claim 4, wherein the support holder includes a support rotating mechanism that rotates the support when the phosphor is deposited from the deposition source. .   6. The method for manufacturing a radiation image conversion panel according to claim 4, wherein a distance between a center line perpendicular to the support and each of the three or more evaporation sources is set to 100 mm to 1500 mm.

Images