JP4833872B2 - Plasma CVD equipment - Google Patents

Description

  The present invention relates to a plasma CVD apparatus having a film forming mode for forming a substrate by plasma CVD and a cleaning mode for cleaning a high-frequency electrode.

  Conventionally, for example, a wind-up type plasma CVD apparatus is used to form a film on a long film-like substrate (see, for example, Patent Document 1 below). This is configured such that the film unwound from the unwinding roller is film-formed by plasma CVD at the film forming position, and then wound by the wind-up roller.

  FIG. 10 shows a configuration of a conventional winding type plasma CVD apparatus. In this type of conventional plasma CVD apparatus, the film 3 is unwound from the unwinding roller 2 inside the vacuum chamber 1, and is wound around a drum roller 5 having a built-in heating source via a plurality of auxiliary rollers 4. After that, the winding roller 7 is wound up via a plurality of auxiliary rollers 6. The drum roller 5 is connected to the ground potential and is disposed opposite to the arc-shaped high-frequency electrode 8. Then, a reaction gas (raw material gas) is introduced between the drum roller 5 and the high frequency electrode 8 through the gas introduction pipe 9 to generate plasma, and the reaction product is attached to the film 3 on the drum roller 5. To form a film.

  In this conventional plasma CVD apparatus, the inside of the vacuum chamber 1 is divided into a reaction chamber 10 and a non-reaction chamber 11 by a sealing means 14 arranged around the drum roller 5. Further, the reaction chamber 10 is evacuated by the evacuation line 12, and the non-reaction chamber 11 is pressurized by introducing auxiliary gas from the auxiliary gas introduction pipe 13, whereby the non-reaction chamber of the reaction gas introduced into the reaction chamber 10 It is comprised so that the leakage to 11 side may be suppressed.

  On the other hand, at the time of film formation by plasma CVD, peripheral components (high-frequency electrodes, shower plates, etc.) at the film formation position are usually contaminated by adhesion of reaction products. For this reason, it is necessary to periodically clean the reaction chamber to keep the dust generation rate low. As this cleaning operation, there is a method (self-cleaning) in which a cleaning gas is introduced instead of a reaction gas to form plasma and react with the deposits to remove (self-cleaning, for example).

JP 2002-221744 A JP 2003-179043 A

  However, in the above-described conventional plasma CVD apparatus, the film 3 wound around the drum roller 5 always faces the high-frequency electrode 8, and the film 3 is contaminated when self-cleaning is performed. There is a problem that plasma cleaning of the film forming unit cannot be executed in the middle.

  This invention is made | formed in view of the above-mentioned problem, and makes it a subject to provide the plasma CVD apparatus which can perform self-cleaning, without affecting a film in the middle of film-forming.

  In solving the above problems, the plasma CVD apparatus of the present invention includes a film forming unit having a high-frequency electrode, and a base material transport system for transporting a film forming base material to the film forming unit. A plasma CVD apparatus having a film forming mode for forming a film by plasma CVD and a cleaning mode for cleaning the high frequency electrode, wherein a cleaning unit for cleaning the high frequency electrode is adjacent to the film forming unit. And a moving means for moving the high-frequency electrode between the film forming unit and the cleaning unit.

  In the plasma CVD apparatus of the present invention, a cleaning unit for cleaning the high frequency electrode (in this case, plasma cleaning) is disposed adjacent to the film forming unit, and the high frequency electrode is moved between the film forming unit and the cleaning unit. By providing the moving means, the high-frequency electrode used in the film forming unit is moved to the cleaning unit to perform plasma cleaning of the high-frequency electrode. This makes it possible to perform plasma cleaning of the high-frequency electrode without contaminating the base material staying in the film forming unit.

  Preferably, in the plasma CVD apparatus of the present invention, two cleaning units are arranged with a film forming unit interposed therebetween, and two high-frequency electrodes are provided. One high frequency electrode is accommodated in one cleaning unit, and the other high frequency electrode is accommodated in the other cleaning unit or film forming unit. With such a configuration, it is possible to perform the film forming process of the base material in the film forming unit using the other high frequency electrode while performing the cleaning process of one high frequency electrode in the one cleaning unit. Further, the used high-frequency electrode is moved to the other cleaning unit to perform the cleaning process, and the cleaned high-frequency electrode is moved from one cleaning unit to the film forming unit to be used for the film forming process.

  By providing an on-off valve between the film forming unit and the cleaning unit to communicate or block between them, it is possible to prevent atmospheric contamination between the film forming unit and the cleaning unit during film formation or cleaning. it can.

  The moving means includes a guide rail that is formed between the film forming unit and the cleaning unit and guides the movement of the high-frequency electrode, and a moving mechanism that moves the high-frequency electrode along the guide rail. The moving mechanism waits in the cleaning unit during film formation and moves the high-frequency electrode from the film formation unit to the cleaning unit during cleaning.

  The configurations of the film forming unit and the cleaning unit are not particularly limited, and may be configured to be accommodated in separate vacuum chambers, or may have a common vacuum chamber that is simultaneously accommodated therein, and the film forming unit in the common vacuum chamber. It is good also as a structure by which the separate vacuum chamber which partitions off a cleaning part separately is installed. In the former case, the high-frequency electrode can be moved between the individual vacuum chambers. In the latter case, the individual vacuum chambers can be moved within the common vacuum chamber.

  Although a long film is used for the substrate, the present invention is not limited to this, and a semiconductor wafer, a glass substrate, or the like may be used. When the substrate is a film, the substrate transport system includes a film unwinding roller and a winding roller. The unwinding roller and the take-up roller are preferably disposed on both sides of the film forming unit, in particular, on both sides in a direction orthogonal to the arrangement direction of the film forming unit and the cleaning unit.

  As described above, according to the plasma CVD apparatus of the present invention, the plasma cleaning process can be performed without affecting the high-frequency electrode used in the film forming unit on the base material in the film forming unit. In addition, since the substrate film formation process and the high-frequency electrode cleaning process can be performed in parallel, productivity can be improved.

  Embodiments of the present invention will be described below with reference to the drawings.

(First embodiment)
FIG. 1 is a side view showing a schematic configuration of the plasma CVD apparatus 20 according to the first embodiment of the present invention, and FIG. 2 is a plan view showing the schematic configuration of the plasma CVD apparatus 20.

  The plasma CVD apparatus 20 of this embodiment supplies a film F to the film forming vacuum chamber 22A constituting the film forming unit 23A, the reaction chamber 21 formed inside the film forming unit 23A, and the film forming unit 23A. An unwinding roller 24 and a winding roller 25 for winding the film F formed by the film forming unit 23A are provided. Then, as will be described later, the plasma CVD apparatus 20 of the present embodiment includes two first cleaning units 23B1 and second cleaning units 23B2 that are adjacent to the film forming unit 23A and sandwich the film forming unit 23A. Cleaning vacuum chambers 22B1 and 22B2 are arranged, respectively.

  The unwinding roller 24 and the winding roller 25 are respectively disposed inside auxiliary vacuum chambers 26 and 27 attached integrally with the film forming vacuum chamber 22A. As shown in FIG. 2, these auxiliary vacuum chambers 26 and 27 are respectively formed on both sides of the film forming vacuum chamber 22A in the direction orthogonal to the arrangement direction of the film forming vacuum chamber 22A and the cleaning vacuum chambers 22B1 and 22B2. Has been placed. The internal spaces of the auxiliary vacuum chambers 26 and 27 communicate with the reaction chamber 21 through gate valves 28 and 29.

  The gate valves 28 and 29 are provided at the film introduction port and the film outlet port of the film forming vacuum chamber 22A, respectively, and have a valve closing position for moving the film F in the vertical direction and a valve opening position for opening the film F. Take. Further, the internal spaces of the film forming vacuum chamber 22A, the cleaning vacuum chambers 22B1 and 22B2, and the auxiliary vacuum devices 26 and 27 are evacuated to a predetermined reduced pressure atmosphere by independent vacuum pumps. Each of them may be evacuated.

  The film F is a substrate for film formation and is made of a long flexible film cut to a predetermined width. The film F is unwound from the unwinding roller 24, subjected to film forming processing by plasma CVD on one surface (deposition surface) in the film forming unit 23 </ b> A, and then wound by the winding roller 25. As a constituent material of the film F, for example, a resin film is used, and in particular, a resin film having a heat resistant temperature of 200 ° C. or higher such as polyimide, polyamide, and aramid is preferable.

  Auxiliary rollers 30A and 30B for guiding the traveling of the film F and a gate valve 28 are installed on the traveling path of the film F from the unwinding roller 24 to the film forming unit 23A. A gate valve 29 and auxiliary rollers 31A and 31B for guiding the travel of the film F are installed on the travel path of the film F leading to. The “substrate conveying system” of the present invention is configured by the unwinding roller 24, the winding roller 25, and the like.

  In the plasma CVD apparatus 20 of the present embodiment, the film F is a stepping roll type wind-up plasma CVD apparatus in which the film F is unwound from the unwinding roller 24 and then formed in a stopped state in the film forming unit 23A. It is composed. At this time, the film F is clamped by the gate valves 28 and 29 at predetermined positions on the upstream side and the downstream side of the film forming unit 23A in the traveling direction. Thereby, the reaction chamber 21 is isolated and the process gas introduced into the reaction chamber 21 is prevented from leaking out of the reaction chamber 21.

  Next, the configuration of the film forming unit 23A will be described with reference to FIG. FIG. 3 is an enlarged view of the film forming unit 23A in FIG.

  The film forming unit 23 </ b> A includes a high frequency electrode 33 disposed on the film deposition surface (upper surface) side of the film F and a counter electrode 34 disposed on the back surface (lower surface) side of the film F, and is opposed to the high frequency electrode 33. A conveyance space for the film F is formed between the electrodes 34.

  The high frequency electrode 33 is attached to a power supply terminal 35 fixed to the cathode block 36. The cathode block 36 is provided with a gas introduction line 37 for process gas (raw material gas). The high-frequency electrode 33 includes a metal shower plate 44 and a power receiving terminal 45 fixed around the shower plate 44, and the power receiving terminal 45 is detachably attached to the power feeding terminal 44. The process gas is introduced into the space region (reaction chamber 21) between the film formation surface of the film F and the shower plate 44 through the shower plate 44. Reference numeral 38 is a matching box connected to a high-frequency power source (not shown).

  The counter electrode 34 is configured as an anode electrode connected to a ground potential, and forms plasma in the reaction chamber 21 in cooperation with the high frequency electrode 33. The counter electrode 34 has a function as a heating source with a built-in heater, and heats the film F to a predetermined temperature. The counter electrode 34 is configured to be movable up and down by a predetermined distance as indicated by an arrow V by an elevating mechanism 40, and ascends from the lowered position shown in the figure and contacts the back side of the film F during film formation.

Here, the source gas introduced as the process gas is appropriately selected depending on the type of material to be deposited on the film F. In this embodiment, various functional layers for thin film transistors (TFTs) are formed on the film F by plasma CVD. For example, when an amorphous silicon (a-Si) thin film is formed on the film F, for example, a mixed gas of silane (SiH ₄ ) and hydrogen (H ₂ ) is used as a source gas. Further, when forming a P ⁺ amorphous silicon layer or an N ⁺ amorphous silicon layer, a gas containing boron (B) or phosphorus (P) (for example, B ₂ H ₆ or PH ₃ ) is used as a source gas.

  A mask member 41 is disposed between the shower plate 44 and the film formation surface of the film F. The mask member 41 is made of, for example, an insulating material such as ceramic, and is formed in a frame shape having an opening that defines a film formation region within the film formation surface of the film F. The mask member 41 is installed on a support member 42 that forms an upper wall portion of each of the film introduction port 46a and the film outlet port 46b opened on both side walls of the film forming vacuum chamber 22A. The film F is pushed upward by the counter electrode 34 via the elevating mechanism 40 and is formed with the film formation surface in contact with the mask member 41. The installation height of the mask member 41 is appropriately set according to the distance between the high-frequency electrode 33 (shower plate 44) and the counter electrode 34 that satisfy the plasma formation conditions in the reaction chamber 21.

  Next, details of the first and second cleaning units 23B1 and 23B2 adjacent to the film forming unit 23A will be described.

  The cleaning vacuum chambers 22B1 and 22B2 constituting the first and second cleaning units 23B1 and 23B2 are respectively arranged so as to sandwich the film formation vacuum chamber 22A. FIG. 4 is a schematic sectional side view showing the configuration of the first and second cleaning units 23B1 and 23B2. The first and second cleaning units 23B1 and 23B2 have the same configuration, can exchange the high frequency electrode 33 with the film forming unit 23A, and the high frequency electrode 33 used in the film forming unit 23A. And for performing a predetermined plasma cleaning.

  The plasma CVD apparatus 20 of this embodiment includes two high-frequency electrodes 33A and 33B. When one high-frequency electrode 33A is accommodated in, for example, one first cleaning unit 23B1, the other high-frequency electrode 33B is The second cleaning unit 23B2 or the film forming unit 23A is housed. That is, the film cleaning process of the film F in the film forming part 23A or the used high frequency from the film forming part 23A to the second cleaning part 23B2 while performing the plasma cleaning process of the high frequency electrode 33A in one first cleaning part 23B1. It is configured to carry the electrode 33B.

  The first and second cleaning units 23B1 and 23B2 have the same configuration as the film forming unit 23A, and include a counter electrode 54, a cathode block 56, a gas introduction line 57 for introducing a cleaning gas, a matching box 58, and the like. ing.

The counter electrode 54 is configured to be movable up and down by an elevating mechanism 50. When the high frequency electrode 33 is moved, the counter electrode 54 is in a lowered position shown in the figure, and is moved to a raised position when the high frequency electrode 33 is plasma cleaned. A power supply terminal 55 that is detachably attached to the power reception terminal 45 of the high-frequency electrode 33 is fixed to the cathode block 56. Cleaning gas introduced from the gas introduction line 57 is selected type of gas that can decompose and remove the decomposition products of the raw material gas deposited on the high-frequency electrode 33 is appropriate, in the example of the kind of the raw material gas mentioned above, NF ₃ and CF A fluorine-based gas such as ₄ is preferably used. Note that on-off valves 48A and 48B are provided between the film forming unit 23A and the first and second cleaning units 23B1 and 23B2, and the on-off valves 48A and 48B are connected to or shut off from each other. It is configured to be opened only when the high-frequency electrode 33 is moved.

  FIG. 5 schematically shows the configuration of the connection part between the film forming part 23A and the second cleaning part 23B2. In the film forming section 23A, the high-frequency electrode 33 has its power receiving terminal 45 pressed against the upper power supply terminal 35 by a pressing rod 46 that penetrates the support member 42 that supports the mask member 41 (FIG. 3). The pressing rod 46 is supported by a support plate 47 installed outside the bottom of the film-forming vacuum chamber 22A, and by driving a cylinder unit 49 installed on the bottom outer surface of the film-forming vacuum chamber 22A. Then, it is moved up and down through the support plate 47.

  A plurality of wheels 39 that engage with guide rails 43 laid on the upper surface of the support member 42 when the pressing rod 46 is lowered are attached to the high-frequency electrode 33. A pair of guide rails 43 are provided in parallel to the arrangement direction of the film forming unit 23A and the cleaning unit 23B2, and a plurality of wheels 39 are attached to the side surface of the high-frequency electrode 33 parallel to this direction.

  On the other hand, a pair of guide rails 53 are installed in the second cleaning unit 23B2 in parallel and on the same straight line as the guide rails 43 of the film forming unit 23A. The guide rail 53 is supported by a support member 52 inside the cleaning vacuum chamber 22B2. Further, a pressing rod 66 is disposed so as to penetrate through the support member 52 and the bottom of the cleaning vacuum chamber 22B. The pressing rod 66 is moved up and down through the support plate 67 by driving the cylinder unit 69. It is configured freely.

  The second cleaning unit 23B2 is provided with a moving mechanism 60 that moves the high-frequency electrode 33 along the guide rails 43 and 53 between the film forming unit 23A and the second cleaning unit 23B2. The moving mechanism 60 includes a base plate 61 and an engaging pin 62 erected on the top surface of the distal end side of the base plate 61.

  The engagement pin 62 is configured to be engageable with an engagement hole 63 formed in the vicinity of the edge of the lower surface of the high-frequency electrode 33. The moving mechanism 60 is configured to be movable between the film forming unit 23A and the second cleaning unit 23B2 in the direction indicated by the arrow C by a driving source (not shown). The drive source is configured by a drive cylinder or a ball screw unit installed in the cleaning vacuum chamber 23B2, or an appropriate link mechanism. Further, the moving mechanism 60 may be moved along the guide rail 53.

  The guide rails 43 and 53 and the moving mechanism 60 constitute the “moving means” of the present invention. The first cleaning unit 23B1 has the same configuration as the above-described second cleaning unit 23B2, and a description thereof will be omitted.

  Next, operation | movement of the plasma CVD apparatus 20 of this embodiment comprised as mentioned above is demonstrated.

  In the film formation mode of the film F, as shown in FIG. 3, the film forming unit 23 </ b> A has the high frequency electrode 33 pushed up to the pressing rod 46 and the power receiving terminal 45 is electrically connected to the power feeding terminal 35. Is in a state. In this state, the film F transported into the reaction chamber 21 and stopped is pushed upward by the counter electrode 34 to bring the film F into contact with the mask member 41 and close the gate valves 28 and 29. Then, the raw material gas is introduced into the reaction chamber 21 from the gas introduction line 37, and a predetermined high frequency power is applied to the high frequency electrode 33, whereby the raw material gas is turned into plasma in the reaction chamber 21, and the reaction product is converted into the film F. The film is deposited on the film formation surface.

  After film formation, the introduction of the source gas and the application of power to the high-frequency electrode 33 are canceled, the gate valves 38 and 39 are opened, and the counter electrode 34 is lowered. Then, the unwinding roller 24 and the winding roller 25 are driven to travel the film F by a predetermined length, and when the next film forming region on the film F is accommodated in the film forming unit 23A, the film F travels. Stop. Thereafter, a film forming process is performed on the film F by performing the same operation as described above.

  By repeatedly performing the above operation, film formation processing is periodically performed on the film formation surface of the film F. Here, when the film forming process is repeatedly performed, the amount of the decomposition product of the source gas increases on various components constituting the film forming unit 23, particularly on the high frequency electrode 33 (shower plate 44). If this is left untreated, the film quality deteriorates due to the generation of dust. Therefore, in the present embodiment, the high-frequency electrode 33 is self-cleaned in the following cleaning mode.

  In the cleaning mode, the high frequency electrode 33 is automatically conveyed to the first and second cleaning units 23B1 and 23B2 arranged adjacent to the film forming unit 23A, and plasma cleaning of the high frequency electrode 33 is performed. Thereby, the plasma cleaning process of the high frequency electrode 33 can be performed without affecting the film F accommodated in the film forming unit 23A.

  In the present embodiment, as described above, the two high-frequency electrodes 33A and 33B are provided. While one of the high-frequency electrodes is being cleaned by one of the cleaning units, the other high-frequency electrode is formed. This is used for the film forming process in the section 23A. Thereby, since the film-forming process of the film F and the cleaning process of the high-frequency electrode 33 can be performed in parallel, productivity can be improved. In addition, since the on-off valves 48A and 48B are provided between the film forming unit 23A and the cleaning units 23B1 and 23B2 so as to communicate or block between them, the film forming unit and the cleaning unit at the time of film forming or cleaning are provided. It is possible to prevent atmospheric contamination between the two.

  In order to replace the high-frequency electrode 33, as schematically shown in FIG. 4, the high-frequency electrode 33 (33B) used in the film forming unit 23 and requiring a cleaning process is moved to the second cleaning unit 23B2 by an operation described later. Let Thereafter, the other high-frequency electrode 33 (33A) that has been cleaned by the first cleaning unit 23B1 is moved to the film forming unit 23A. While the film forming process of the film F in the film forming unit 23A is performed using the cleaned high frequency electrode 33A, the cleaning process of the high frequency electrode 33B is performed in the second cleaning unit 23B2.

  Next, a method for moving the high-frequency electrode 33 (33B) from the film forming unit 23A to the second cleaning unit 23B2 will be described with reference to FIG.

  The moving mechanism 60 is on standby in the second cleaning unit 23B2 when the film F is formed, and when the high-frequency electrode 33 is cleaned in the second cleaning unit 23B2, the opening / closing valve 48B is opened and the second forming unit 23A starts the second cleaning unit 23B2. The high frequency electrode 33 is moved to the cleaning unit 23B2.

  That is, in the state shown in FIG. 5, after first opening the on-off valve 48B, the moving mechanism 60 is moved from the second cleaning unit 23B2 to the film forming unit 23A. The movement mechanism 60 stops moving when the engagement pin 62 reaches a position directly below the engagement hole 63. Then, in the film forming portion 23 </ b> A, the pressing rod 46 is lowered, the high frequency electrode 33 is placed on the guide rail 43, and the engaging pin 62 is engaged with the engaging hole 63. Subsequently, the moving mechanism 60 is moved to the second cleaning unit 23B2, and the high frequency electrode 33 is conveyed along the guide rail 43 and the guide rail 53 into the second cleaning unit B2. Although a predetermined gap is formed between the guide rail 43 and the guide rail 53, since a plurality of wheels are arranged on the high frequency electrode 33, the presence of the gap causes a gap between the guide rails 43 and 53. The transferability of the high frequency electrode is not impaired.

  The high-frequency electrode 33 is stopped at a predetermined position of the second cleaning unit 23B2, and then is pushed upward by the pressing rod 66 to bring the power receiving terminal 45 into contact with the power supply terminal 55 of the second cleaning unit 23B2. In the cleaning process of the high-frequency electrode 33B in the second cleaning unit 23B2, after the on-off valve 48B is closed, a cleaning gas is introduced from the gas introduction line 57 and a predetermined high-frequency power is applied to the high-frequency electrode 33B. As a result, the cleaning gas is turned into plasma, and the decomposition products of the source gas adhering to the high-frequency electrode 33B are removed. Since the on-off valve 48B is closed during the cleaning process, it is possible to prevent the cleaning gas from leaking to the film forming unit 23A.

  As described above, the plasma cleaning process of the high-frequency electrode 33B in the second cleaning unit 23B2 is performed. Note that the plasma cleaning process of the high-frequency electrode 33A in the first cleaning unit 23B1 is also performed by the same method as described above. In addition, the process of moving the cleaned high frequency electrode from the cleaning units 23B1 and 23B2 to the film forming unit 23A is performed by the operation opposite to that described above.

(Second Embodiment)
Subsequently, a second embodiment of the present invention will be described. FIG. 6 is a side sectional view showing a schematic configuration of a plasma CVD apparatus 70 according to the second embodiment of the present invention, and FIGS. 7 to 9 are schematic side sectional views for explaining the operation of the plasma CVD apparatus 70.

  In the first embodiment described above, the example in which the film forming unit and the cleaning unit are configured by separate vacuum chambers has been described. However, the plasma CVD apparatus 70 of this embodiment simultaneously accommodates the film forming unit and the cleaning unit. The common vacuum chamber 71 is provided. The common vacuum chamber 71 is evacuated to a predetermined reduced pressure atmosphere by a pair of vacuum pumps 75, and forms a film forming unit 73A, a first cleaning unit 73B1, and a second cleaning unit 73B2. One of the vacuum pumps 75 is connected to the first cleaning unit 73B1, and the other of the vacuum pumps 75 is connected to the second cleaning unit 73B2. The first and second cleaning units 73B1 and 73B2 are arranged so as to sandwich the film forming unit 73A in a direction (lateral direction on the paper surface) orthogonal to the transport direction (paper surface vertical direction) of the film F.

  Two individual vacuum chambers 72A and 72B are installed inside the common vacuum chamber 71, respectively. The individual vacuum chambers 72A and 72B are configured to be independently movable in the horizontal direction in the drawing inside the common vacuum chamber 71, and have a function of partitioning the film forming unit 73A and the cleaning units 73B1 and 73B2 individually. Yes.

  The individual vacuum chambers 72A and 72B are configured to be movable between the film forming unit 73A and the cleaning units 73B1 and B2 along a guide rail 86 laid on the bottom of the common vacuum chamber 71. For example, a pair of guide rails 86 are arranged in parallel, and a plurality of wheels 87 that run on the guide rails 86 are provided at the bottoms of the individual vacuum chambers 72A and 72B. The guide rail 86 may be formed continuously between the film forming unit 73A and the cleaning units 73B1 and 73B2, or may be formed discontinuously.

  In addition, as a moving mechanism which makes individual vacuum tank 72A, 72B run along the guide rail 86, it can comprise, for example using a cylinder apparatus, a ball screw unit, and an appropriate link mechanism. When the moving mechanism is constituted by a cylinder device, for example, the cylinder device is installed on the outer wall of the common vacuum chamber 71, and the drive rod is extended into the common vacuum chamber 71 to be connected to the individual vacuum chambers 72A and 72B. A form of connection can be used.

  The individual vacuum chambers 72A and 72B have the same configuration, and have a structure in which one side end face is open and the other side end face is closed, and the respective open ends are installed facing each other. The individual vacuum chambers 72 </ b> A and 72 </ b> B include a high-frequency electrode 76, a counter electrode 77, a gas introduction head 78 for introducing a source gas or a cleaning gas between the high-frequency electrode 76 and the counter electrode 77, and the counter electrode 77. On the other hand, an elevating rod 79 and the like for elevating in the vertical direction are provided.

  The film F, which is a film forming substrate, is conveyed through the common vacuum chamber 71 so as to cross the film forming unit 73A. A passage 81 for allowing the film F to pass therethrough is formed in each of the individual vacuum chambers 72A and 72B. One end of each of the passages 81 and 81 is formed over the open ends of the individual vacuum chambers 72A and 72B, thereby preventing interference with the film F when the individual vacuum chambers 72A and 72B are moved.

  In the common vacuum chamber 71, gas introduction lines 80A, 80B1, and 80B2 are respectively installed. The gas introduction line 80A is connected to the gas introduction head 78 of the individual vacuum chambers 72A and 72B located in the film forming unit 73A, and supplies a film forming source gas to the film forming unit 73A. The gas introduction line 80B1 is connected to the gas introduction head 78 of the individual vacuum tank 72B located in the first cleaning unit 73B1, and the gas introduction line 80B2 is connected to the gas introduction head 78 of the individual vacuum tank 72A located in the second cleaning unit 73B2. Then, the cleaning gas is supplied to the cleaning units 73B1 and 73B2.

  Further, at the bottom of the common vacuum chamber 71, the lifting rod 79 of the individual vacuum chambers 72A and 72B is moved up and down to the corresponding positions of the film forming unit 73A and the first and second cleaning units 73B1 and 73B2. Each cam mechanism 82 is provided. By driving the cam mechanism 80, the counter electrode 77 can be reciprocated in the vertical direction via the elevating rod 79. The counter electrode 77 is moved upward during film deposition or during the cleaning process of the high frequency electrode 76, and when the film F is conveyed. Alternatively, when the individual vacuum chambers 72A and 72B are moved, the lowered position is taken.

  Furthermore, on the boundary between the film forming unit 73A and the first and second cleaning units 73B1 and 73B2, which are the bottom of the common vacuum chamber, on-off valves 74A and 74B are installed movably. As shown in FIG. 7, the on-off valves 74A and 74B are provided with drive units 83A and 83B, respectively, and the drive positions of the drive units 83A and 83B to the inside of the common vacuum chamber 71 and the storage units 84A and 84B. It is comprised so that the exit position to each may be taken.

  As shown in FIG. 6 and FIG. 7, the on-off valve 74A hermetically partitions the film forming unit 73A and the first cleaning unit 73B1, and closes the open ends of the individual vacuum tanks 72A and 72B. It has a function of closing the tanks 72A and 72B. Further, as shown in FIG. 9, the on-off valve 74B airtightly partitions between the film forming unit 73A and the second cleaning unit 73B2, and closes the open ends of the individual vacuum chambers 72A and 72B. It has a function of closing 72A and 72B. Seal rings 85A and 85B are provided on contact surfaces of the open ends of the individual vacuum chambers 72A and 72B with the on-off valves 74A and 74B, respectively. A seal ring 185 is provided on the contact surface of the on-off valve 74A (and on-off valve 74B) with the common vacuum chamber 71.

  Next, the operation of the plasma CVD apparatus 70 of the present embodiment configured as described above will be described with reference to FIGS.

  Referring to FIG. 7, one individual vacuum chamber 72A is located in film forming unit 73A to accommodate film F, and the other individual vacuum chamber 72B is positioned in first cleaning unit 73B1. The individual vacuum chambers 72A and 72B are blocked by an on-off valve 74A. In this state, driving of the cam mechanism 82 raises the counter electrode 77 in the individual vacuum chambers 72A and 72B, the raw material gas is introduced from the gas introduction line 80A, the cleaning gas is introduced from the gas introduction line 80B1, and the high frequency is supplied. High frequency power is applied to the electrode 76. Accordingly, the film forming unit 73A performs the film forming process of the film F by plasma CVD, and the first cleaning unit 73B1 plasma cleans the inside of the individual vacuum chamber 72B including the high frequency electrode 77.

  The source gas and the cleaning gas introduced into the individual vacuum tanks 72A and 72B leak to the outside of the individual vacuum tanks 72A and 72B through the film conveyance passage 81. These leaked gases are discharged by the vacuum pump 75. Each is exhausted.

  Next, when cleaning the high-frequency electrode 76 in the individual vacuum chamber 72A, first, the counter electrode 77 is moved to the lowered position shown in the figure. Thereafter, as shown in FIG. 8, first, the individual vacuum chamber 72A is moved to the second cleaning unit 73B2, the on-off valve 74A is retracted to the storage unit 84A, and then the on-off valve 74B is advanced into the common vacuum chamber 71, The individual vacuum chamber 72A is brought into close contact with the open end. Subsequently, as shown in FIG. 9, the individual vacuum chamber 72B is moved to the film forming unit 73A, and the open end of the individual vacuum chamber 72B is brought into close contact with the on-off valve 74B.

  In the second cleaning unit 73B2, the cleaning gas is introduced into the individual vacuum chamber 72A from the gas introduction line 80B2, so that the plasma cleaning inside the individual vacuum chamber 72A including the high-frequency electrode 76 can be performed. On the other hand, in the film forming section 73A, the film F is formed by introducing the source gas from the gas introduction line 80A to the individual vacuum chamber 72B.

  During the self-cleaning of the individual vacuum tank 72B, the individual vacuum tank 72A and the individual vacuum tank 72B are moved to the film forming unit 73A and the first cleaning unit 73B1 as shown in FIG. Move. Then, the film forming process in the individual vacuum chamber 72A and the cleaning process of the individual vacuum chamber 72B are performed by the same operation as described above.

  As described above, according to the present embodiment, the high frequency electrode 76 used in the film forming unit 73A is moved to the cleaning units 73B1 and 73B2 to perform plasma cleaning of the high frequency electrode 76. Plasma cleaning of the high frequency electrode 76 can be performed without contaminating the film F staying at 73A.

  In addition, while one high-frequency electrode (individual vacuum chamber) is cleaned by one cleaning unit, the other high-frequency electrode (individual vacuum chamber) can be used for film formation of the base material in the film-forming unit, Productivity can be improved.

  As mentioned above, although each embodiment of this invention was described, of course, this invention is not limited to these, Based on the technical idea of this invention, a various deformation | transformation is possible.

  For example, in each of the embodiments described above, a long film has been described as an example of a film formation base material. However, the present invention is not limited to this, and a plasma CVD apparatus using a semiconductor wafer, a glass substrate, or the like as a film formation base material is used. The present invention is also applicable.

  In the first embodiment described above, an example in which only the high-frequency electrode 33 is moved from the film forming unit 23A to the cleaning units 23B1 and 23B2 to perform the plasma cleaning has been described. For example, the mask member 41 is also moved to the cleaning unit at the same time. The cleaning process may be performed together with the high frequency electrode. In this case, the mask member is preferably configured integrally with the high frequency electrode.

  Further, in each of the embodiments described above, the plasma cleaning in which the cleaning gas plasma is generated inside the cleaning unit to perform cleaning of the high-frequency electrode has been described as an example. However, the present invention is not limited thereto, and the cleaning is performed outside the cleaning unit. A method of cleaning the high-frequency electrode by generating gas plasma and introducing the active species into the cleaning unit may be adopted.

1 is a side sectional view showing a schematic configuration of a plasma CVD apparatus according to a first embodiment of the present invention. 1 is a plan view showing a schematic configuration of a plasma CVD apparatus according to a first embodiment of the present invention. It is an enlarged view of the film-forming part in the plasma CVD apparatus of FIG. [4]-[4] line direction sectional drawing in FIG. FIG. 5 is a side sectional view showing a configuration around a connection portion between a film forming unit and a second cleaning unit in FIG. 4. It is a schematic block diagram of the plasma CVD apparatus by the 2nd Embodiment of this invention. It is a sectional side view which shows the operation example of the plasma CVD apparatus by the 2nd Embodiment of this invention. It is a sectional side view which shows the operation example of the plasma CVD apparatus by the 2nd Embodiment of this invention. It is a sectional side view which shows the operation example of the plasma CVD apparatus by the 2nd Embodiment of this invention. It is a schematic block diagram of the conventional plasma CVD apparatus.

Explanation of symbols

20 Plasma CVD apparatus 21 Reaction chamber 22A Deposition vacuum tank 22B1, 22B2 Cleaning vacuum tank 23A Deposition section 23B1, 23B2 First and second cleaning sections 24 Unwinding roller 25 Winding roller 33 High frequency electrode 34 Counter electrode 48A, 48B open / close valve 43, 53 guide rail 60 moving mechanism 70 plasma CVD apparatus 71 common vacuum tank 72A, 72B individual vacuum tank 73A film forming part 73B1, 73B2 first and second cleaning parts 74A, 74B open / close valve 76 high frequency electrode 77 counter electrode 86 Guide rail

Claims (6)

A deposition unit having a high-frequency electrode; and a substrate transport system configured to transport a substrate made of a long film for deposition along the first axial direction to the deposition unit. A plasma CVD apparatus having a film forming mode for forming a film by CVD and a cleaning mode for cleaning the high-frequency electrode,
The base material transport system includes an unwinding roller for the base material and a winding roller for the base material disposed on both sides of the film forming unit,
A cleaning unit that performs plasma cleaning of the high-frequency electrode is disposed adjacent to the film-forming unit, and the high-frequency electrode is orthogonal to the first axial direction between the film-forming unit and the cleaning unit. Moving means for moving along the second axial direction ,
Two cleaning units are arranged with the film forming unit interposed therebetween, and two high-frequency electrodes are provided. One of the high-frequency electrodes is accommodated in one of the cleaning units, and the other high-frequency electrode is provided. Is accommodated in the other cleaning section or the film forming section . 2. The plasma CVD according to claim 1, wherein an on-off valve is provided between the film forming unit and the cleaning unit to communicate or block between the film forming unit and the cleaning unit. apparatus. The moving means includes a guide rail that is formed between the film forming unit and the cleaning unit and guides the movement of the high-frequency electrode, and a moving mechanism that moves the high-frequency electrode along the guide rail. The plasma CVD apparatus according to claim 1, wherein the apparatus is a plasma CVD apparatus. 4. The plasma CVD apparatus according to claim 3 , wherein the moving mechanism stands by in the cleaning unit during film formation, and moves the high-frequency electrode from the film formation unit to the cleaning unit during cleaning. . The film forming unit and the cleaning unit, respectively are accommodated in a separate vacuum chamber, according to claim 4, in each vacuum chamber, characterized in that the counter electrodes of the high-frequency electrode is placed Plasma CVD equipment. Having a common vacuum chamber that simultaneously accommodates the film forming unit and the cleaning unit;
Inside the common vacuum chamber, an individual vacuum chamber that separates the film forming unit and the cleaning unit individually is installed,
2. The plasma CVD apparatus according to claim 1, wherein a plurality of the cleaning units are arranged across the film forming unit, and the individual vacuum chambers are moved by the moving means inside the common vacuum chamber.

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