JP4840591B2 - Composite semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a composite semiconductor device obtained by stacking a plurality of semiconductor devices and a manufacturing method thereof.

  2. Description of the Related Art Along with higher functionality and higher density mounting of electronic devices, semiconductor devices (system in package: SiP) in which a plurality of semiconductor chips are combined into one package are being implemented. SiP can be housed in a small semiconductor device while realizing high functionality by combining existing semiconductor elements having different functions. Usually, a method of designing and assembling a new semiconductor device as SiP is performed. However, since designing a new semiconductor device increases the cost, in recent years, existing semiconductor devices are stacked to form a single semiconductor device. A package on package (PoP) type semiconductor device has been proposed (see, for example, Patent Document 1).

  In such a semiconductor device, a connection terminal for mounting the second semiconductor device on the first semiconductor device is provided in advance, and the first terminal is connected to the external connection terminal of the second semiconductor device. The second semiconductor device is electrically connected.

  However, many of the existing semiconductor devices containing high-performance semiconductor elements used for SiP have external connection terminals made of solder balls, so that the first and second semiconductor devices can be reliably connected. The gap between the first and second semiconductor devices must be less than the solder ball diameter. In particular, since a small-diameter solder ball is used in a semiconductor device having a large number of external connection terminals and a narrow-pitch external terminal, a second semiconductor device having such a narrow pitch is formed on the thick first semiconductor device. The semiconductor device could not be mounted. Further, since a semiconductor element is usually mounted in the vicinity of the center of the first semiconductor device, upper and lower connection terminals cannot be formed in this region. Therefore, the outer size of the first semiconductor device is smaller than that of the first semiconductor device. In the case of connecting the two semiconductor devices, the wiring board cannot be mounted unless the external size of the second semiconductor device is extended to the connection electrode portion of the first semiconductor device by inserting a wiring board in the middle. It was.

In addition, high-functional semiconductor elements used for SiP are often used at high operating speeds, and generate large amounts of heat due to high power consumption during operation, but when used as the first semiconductor device of SiP. Since the second semiconductor device is mounted directly above the semiconductor element mounting portion, heat cannot be radiated upward, and the power consumption of the usable semiconductor elements is limited.
Furthermore, in such a high-performance semiconductor element, a noise signal called switching noise is generated from the semiconductor element during operation, thereby reducing signal quality or causing malfunction of other semiconductor devices disposed in the periphery. It is known that In a structure in which the first semiconductor device and the second semiconductor device are stacked in close contact as in PoP, there is a high possibility of causing malfunctions due to electromagnetic noise caused by switching noise generated from each semiconductor element. .
Japanese Patent Laid-Open No. 10-135267

In view of the above-described problems, the present invention can reliably obtain electrical connection while widening the gap between the second semiconductor device stacked above and the first semiconductor device on the lower side. It is an object of the present invention to provide a semiconductor device on which a small second semiconductor device can be mounted, and a manufacturing method thereof.
Furthermore, according to the present invention, by placing a metal plate between the first and second semiconductor devices, the heat generated by the first semiconductor element can be released to the outside, and the metal plate can be electrically connected. An object of the present invention is to provide a semiconductor device capable of shielding electromagnetic noise generated by each semiconductor element by grounding and preventing malfunction, and a method for manufacturing the same.

Such an object is achieved by the configuration of the present invention described in the following [1] to [17].
[1] A composite semiconductor device configured by stacking a plurality of semiconductor devices including a first semiconductor device and a second semiconductor device, the external connection terminal of the first semiconductor device and the second semiconductor device and external connection terminals of the semiconductor device is connected by a lead frame, in a central portion of the lead frame, the composite metal plate so as to cover the upper surface of the first semiconductor device is characterized that you have placed It is a semiconductor device.
[ 2 ] A metal plate placed at the center of the lead frame so as to cover the upper surface of the first semiconductor device is external to the first semiconductor device by one or more leads formed integrally with the metal plate. The composite semiconductor device according to the above [ 1 ], which is connected and fixed to a connection terminal.
[ 3 ] The composite type according to [ 1 ] or [ 2 ], wherein the external connection terminal of the first semiconductor device connected to the lead formed integrally with the metal plate is a thermal via. It is a semiconductor device.

[ 4 ] The metal plate placed so as to cover the upper surface of the first semiconductor device is electrically grounded, [ 1 ] to [ 3 ], wherein the metal plate is electrically grounded This is a composite semiconductor device.
[ 5 ] Any one of the above [ 1 ] to [ 4 ], wherein a lead is fixed with a splash prevention tape on a metal plate placed so as to cover the upper surface of the first semiconductor device. 2. A composite semiconductor device according to item 1.
[ 6 ] The above [ 1 ] to [ 4 ], wherein the metal plate and the lead placed so as to cover the upper surface of the first semiconductor device are fixed on the same plane by a scattering prevention tape. A composite semiconductor device according to any one of the above.
[ 7 ] The composite semiconductor device according to any one of [1] to [ 6 ], wherein a thermal via is formed in an external connection terminal of the second semiconductor device.
[ 8 ] Any one of the above [1] to [ 7 ], wherein an interval between any one of the first semiconductor device and the metal plate and the second semiconductor device is 1 μm to 4 mm. The composite semiconductor device according to the item.
[ 9 ] The composite semiconductor device according to any one of [1] to [ 8 ], wherein the first semiconductor device is a BGA type semiconductor device.
[ 10 ] The above [ 1 ], wherein either one or both of the first semiconductor device and the second semiconductor device has a plurality of semiconductor devices and individual passive components mounted on a wiring board. It is a composite type semiconductor device given in any 1 paragraph of-[ 8 ].

[ 11 ] (A) A metal plate is formed integrally with the metal plate and is positioned at the center of the lead frame so as to cover the upper surface of the first semiconductor device with one or more leads extended from the periphery. Fixing on the first semiconductor device, and
(B) connecting the lead frame formed into a three-dimensional shape to a connection terminal formed on a surface opposite to the external connection terminal of the first semiconductor device;
(C) connecting an external connection terminal of a second semiconductor device to the opposite end of the lead frame;
The method of manufacturing a composite semiconductor device according to [1], comprising:
[12] (A) a step of integrating the metal plate and the lead frame so that the metal plate is positioned at the center of the lead frame;
( B ) The metal plate is placed so as to cover the upper surface of the first semiconductor device, and the lead frame formed into a three-dimensional shape is connected to the connection terminal formed on the surface opposite to the external connection terminal of the first semiconductor device. And a process of
( C ) connecting an external connection terminal of the second semiconductor device to the opposite end of the lead frame;
The method of manufacturing a composite semiconductor device according to [1], comprising:
[13] The composite semiconductor device as described in [12] above, wherein the lead frame is a lead frame formed into a three-dimensional shape by fixing the lead on a metal plate with an anti-scatter tape. It is a manufacturing method.
[14] The lead frame, the composite according to the above [12], wherein the by the loose prevention tape is lead frame formed into three-dimensional shape by fixing the lead to the metal plate and flush A method for manufacturing a semiconductor device.

[15] The method for manufacturing a composite semiconductor device according to any one of [ 11 ] to [14], wherein the lead frame has a linearly aligned shape.
[16] The method for manufacturing a composite semiconductor device according to any one of [ 11 ] to [14], wherein the lead frame has a shape aligned in a square shape.
[17] The method for manufacturing a composite semiconductor device according to any one of [13] to [16], wherein the anti-separation tape has a structure in which an adhesive is applied to a polyimide film.

  Hereinafter, a composite semiconductor device using the lead frame according to the present invention and a method for manufacturing the composite semiconductor device will be described. The following description is an example of the composite semiconductor device according to the present invention and does not limit the present invention.

  As a method of connecting the lead frame to the connection terminal of the first semiconductor device, connection by solder is preferably used. Solder paste is applied to the connection terminals of the first semiconductor device by printing or dispensing, and the lead frame is aligned and mounted. Next, the lead frame is soldered by passing through a reflow device. The surface of the lead frame may be plated with solder or tin.

  In the lead frame used in the present invention, the leads may be formed in a straight line, and when the connection terminals of the semiconductor device are formed on four sides, the leads arranged on the four sides are square. A connected shape may be used. The lead tips on the opposite side are usually arranged in a straight line, but may be arranged in a staggered arrangement or a plurality of rows of lattices in accordance with the position of the external terminal on the connection partner side.

  By extending the lead on the side of the lead frame on which the second semiconductor device is mounted, a second semiconductor device smaller than the outer shape of the first semiconductor device is formed above the semiconductor element mounting portion of the first semiconductor device. It can be installed.

A first semiconductor device which is stacked to form a PoP type semiconductor device has a connection terminal for electrically connecting to the second semiconductor device on the surface opposite to the mounting surface on the substrate or the like. What is used is used. External connection terminals are formed on a mounting surface on a substrate or the like, and a semiconductor device used for SiP usually uses a ball grid array (BGA) type having connection terminals by solder balls.
The BGA type semiconductor device has a structure in which a semiconductor element is mounted on a ceramic or resin wiring board that electrically connects an electrode of the semiconductor element and an external connection terminal, and a connection terminal to the second semiconductor device. Are formed on the surface opposite to the external connection terminals of these wiring boards. (Figure 1)

  As the second semiconductor device, devices having various types of external connection terminals can be used. In addition to the BGA type, lead frame type semiconductor devices such as Thin Small Out-line Package (TSOP) and Small Out-line J-lead Package (SOJ) can also be used.

Further, the first and / or second semiconductor device may be pre-mounted on another wiring board. In this case, a connection terminal for electrically connecting to the first and / or second semiconductor device is formed on another wiring board. In addition to the first and / or second semiconductor devices, a plurality of semiconductor devices can be mounted on the wiring board. Furthermore, individual passive components such as resistors and capacitors other than semiconductor elements can be mounted. The plurality of semiconductor elements and the individual passive components can be mounted on both sides of the wiring board other than the connection terminal forming portion with the first and / or second semiconductor devices. (Figure 2)
An interval of 1 μm to 4 mm may be formed between the first semiconductor device and the second semiconductor device. Further, the distance between the first semiconductor device and the second semiconductor device is preferably 10 μm to 1 mm. The above range is preferable because the heat dissipation of the semiconductor device is improved.
Further, by using a part of the connection terminal in the first semiconductor device and the second semiconductor device as a thermal via, the heat dissipation effect can be further enhanced.

Next, a description will be given of a composite semiconductor device using a lead frame in which leads are fixed by a loosening prevention tape and a method for manufacturing the composite semiconductor device. The following description is an example of the composite semiconductor device according to the present invention and does not limit the present invention.
A lead frame with a lead-proof tape is prepared by attaching a lead-proof tape to a lead frame prepared in advance at a pitch of the connection terminals, mounted on the connection terminal of the first semiconductor device, and reflow soldered. The solder balls of the second semiconductor device are aligned and mounted on the connection leads of the first semiconductor device with the connection leads obtained in this way, and reflow solder connection is made.

The lead frame used in the present invention has a shape arranged in advance with the pitch of the connection terminals. Such lead frames are generally produced by etching or press punching, and those produced by either method can be used for the purpose of the present invention. Narrow pitch ones are often produced by etching.
As the material of the lead frame, iron, nickel, an alloy such as 42 alloy, copper, copper alloy, or the like can be used. The lead frame is formed into a required three-dimensional shape before mounting on the semiconductor device. In order to form a three-dimensional shape, press molding using a mold is used.

The lead frame is used by cutting it from the frame before connecting to the semiconductor device. At this time, in order to prevent each lead from being separated, a piece of lead prevention tape is attached to the part of the lead. Secure the leads so that they do not fall apart. The anti-separation tape can be applied before or after forming the leads into a three-dimensional shape, but if the leads are not formed, the frame is flat and easy to apply.
The position where the anti-separation tape is affixed to the lead frame may be anywhere as long as it does not hinder the solder connection between the lead frame and the connection terminal on the lead frame, near the center in the longitudinal direction of the lead, near the connection terminal, and the connection terminal. It can be attached to the opposite side of the solder connection surface.

  A film having an adhesive coated on one side is used for the anti-scatter tape. As the film, polyester, polypropylene, polyimide, polyphenylene ether, polyether sulfone, liquid crystal polymer, or the like can be used, and polyimide having excellent heat resistance and dimensional stability is preferable. The adhesive may be a curable adhesive such as acrylic or epoxy, or a thermoplastic adhesive such as hot melt.

  As a method of connecting the lead frame with the anti-raveling tape to the connection terminal of the first semiconductor device, connection by solder is preferably used. Solder paste is applied to the connection terminals of the first semiconductor device by printing or dispensing, and the lead frame is aligned and mounted. Next, the lead frame is soldered by passing through a reflow device. The surface of the lead frame may be plated with solder or tin.

In the lead frame with the anti-separation tape used in the present invention, the leads may be formed in a straight line (FIG. 3), and when the connection terminals of the semiconductor device are formed on four sides,
The lead arranged on the side may be fixed with a square-shaped anti-scattering tape (FIG. 4). The lead tips are usually arranged in a straight line, but they may be arranged in a staggered arrangement or a plurality of rows of lattices in accordance with the terminal positions on the connection partner side.

By extending the lead on the side of the lead frame on which the second semiconductor device is mounted, a second semiconductor device smaller than the outer shape of the first semiconductor device is formed above the semiconductor element mounting portion of the first semiconductor device. It can be mounted (FIG. 5).
In the present invention, the metal plate placed so as to cover the upper surface of the first semiconductor device preferably covers as much of the semiconductor element mounting portion of the first semiconductor device as possible.
In the present invention, the material of the metal plate placed so as to cover the upper surface of the first semiconductor device may be a metal having a heat dissipation effect, and a metal having high thermal conductivity is preferable. Iron, nickel, 42 alloy, copper, copper alloy, or the like can be used. Copper and copper alloys are preferred because of their high thermal conductivity and availability.

In order to efficiently dissipate the heat generated from the first semiconductor device, the metal plate is preferably extended to the outside of the outer shape of the second semiconductor device. It is not preferable to project the metal plate larger than the outer shape of the semiconductor device, and it is preferable to use a thermal via as a method of effectively radiating heat with a small size.
The thermal via is formed by filling a through hole that penetrates the substrate and electrically connects the front and back of the substrate with metal or a metal paste to improve the thermal conductivity in the thickness direction of the substrate.

A part of the connection terminal of the first semiconductor device is used as a thermal via, the external connection terminal and the connection terminal are connected, and one or more leads formed integrally with the metal plate are connected to the thermal via, whereby the first semiconductor The heat generated by the device can be transmitted to the thermal via via the metal plate and released to the mounting substrate of the semiconductor device through the external connection terminal of the first semiconductor device. (Fig. 5)
In order to efficiently transmit the heat generated from the first semiconductor device to the metal plate, it is preferable to apply a heat conductive grease to the gap between the metal plate and the first semiconductor device.

  In order to effectively shield the electromagnetic wave noise generated from the first semiconductor device, the metal plate is preferably electrically grounded. For this purpose, the lead is extended from the periphery of the metal plate. A method of connecting to a ground terminal provided in advance on the first semiconductor can be used.

The metal plate covering the first semiconductor device may be formed integrally with the lead frame that connects the external connection terminals of the first and second semiconductor devices, or may be a separate body.
In the case of a separate body, only the metal plate was previously molded integrally with the metal plate and extended from the periphery.
After fixing on the first semiconductor device with the above leads, the lead frame for connecting the external connection terminals may be fixed, and the metal plate and the lead frame for terminal connection are integrated in advance with a non-breaking tape. After that, the first semiconductor device may be fixed.

  When the metal plate and the lead frame are fixed with the anti-separation tape, the anti-separation tape is mounted on the second semiconductor device at the end of the lead frame so that the end of the metal plate and the lead frame are flush It can be stuck so that the tip of the lead frame is lined up via a method of sticking to the opposite side of the surface (FIG. 4) or an anti-scattering tape on the metal plate. (Fig. 6)

  A first semiconductor device which is stacked to form a PoP type semiconductor device has a connection terminal for electrically connecting to the second semiconductor device on the surface opposite to the mounting surface on the substrate or the like. What is used is used. External connection terminals are formed on a mounting surface on a substrate or the like, and a semiconductor device used for SiP usually uses a ball grid array (BGA) type having connection terminals by solder balls.

The BGA type semiconductor device has a structure in which a semiconductor element is mounted on a ceramic or resin wiring board that electrically connects an electrode of the semiconductor element and an external connection terminal, and a connection terminal to the second semiconductor device. Is formed on the surface opposite to the external connection terminals of these wiring boards (FIG. 5).
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By using part of the connection terminals in the first semiconductor device and the second semiconductor device as thermal vias, the heat dissipation effect can be enhanced.

  An interval of 1 μm to 4 mm may be formed between the metal plate and the second semiconductor device. Further, the distance between the metal plate and the second semiconductor device is preferably 10 μm to 1 mm. The above range is preferable because the heat dissipation of the semiconductor device is improved.

As the second semiconductor device, devices having various types of external connection terminals can be used. In addition to the BGA type, lead frame type semiconductor devices such as TSOP and SOJ can also be used.
Further, the first and / or second semiconductor device may be pre-mounted on another wiring board. In this case, a connection terminal for electrically connecting to the first and / or second semiconductor device is formed on another wiring board. In addition to the first and / or second semiconductor devices, a plurality of semiconductor devices can be mounted on the wiring board. Furthermore, individual passive components such as resistors and capacitors other than semiconductor elements can be mounted. The plurality of semiconductor elements and individual passive components can be mounted on both sides of the wiring board other than the connection terminal forming portion with the first and / or second semiconductor devices (FIG. 7).

  EXAMPLES Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to these. As a first semiconductor device, a 35 mm square BGA type dummy semiconductor device having 144-pin solder ball external connection terminals was prepared. This semiconductor device has a structure in which a semiconductor element mounting portion is sealed with a resin at a height of 2 mm at a central portion of a 20 mm square portion on a 35 mm square wiring board, and 120 pins at a pitch of 1 mm around the sealing portion. Connection terminals are formed with wiring. Next, a 15 mm square BGA type dummy semiconductor device having 60-pin solder ball external connection terminals was prepared as a second semiconductor device. The solder balls of the second semiconductor device had a diameter of 0.5 mm and a ball pitch of 0.7 mm.

  A lead frame aligned with the connection terminal of the first semiconductor device and the external connection terminal of the second semiconductor device was made of a copper alloy. Prepare an anti-spray tape with one side of the polyimide film coated with epoxy adhesive, and apply it to the tip of the lead from the back side of the terminal on which the second semiconductor device of the lead frame is mounted, and then cure at 150 ° C for 2 hours And fixed the lead so that it does not come apart. The lead frame was formed into a three-dimensional shape and then cut with a mold to obtain a lead frame. Solder paste was applied to the connection terminals of the first semiconductor device, the lead frame was arranged on four sides, and then the lead frame was collectively connected to the first semiconductor device through a solder reflow device.

  Flux was applied to the solder balls of the second semiconductor device, mounted according to the mounting position of the lead frame, passed through the solder reflow device, and electrical connection between the upper and lower semiconductor devices was obtained. When the electrical connection of the obtained composite type semiconductor device was checked from the external connection terminal of the lower first semiconductor device, it was confirmed that all were connected.

As a first semiconductor device, a 35 mm square BGA type dummy semiconductor device having 144-pin solder ball external connection terminals was prepared. This semiconductor device has a structure in which a semiconductor element mounting portion is sealed with a resin at a height of 2 mm at a central portion of a 20 mm square portion on a 35 mm square wiring board, and 120 pins at a pitch of 1 mm around the sealing portion. Connection terminals are formed with wiring.
Next, a 15 mm square BGA type dummy semiconductor device having 60-pin solder ball external connection terminals was prepared as a second semiconductor device. The solder balls of the second semiconductor device had a diameter of 0.5 mm and a ball pitch of 0.7 mm.

Linearly arranged leads aligned with the connection terminal of the first semiconductor device and the external connection terminal of the second semiconductor device are arranged on four sides, and the upper part of the resin-encapsulated portion of the first semiconductor device is at the center. A lead frame in which a 10 mm square metal plate covering the substrate was held by leads extending from four sides was produced by 42 alloy.
An anti-separation tape in which an epoxy adhesive was applied to one side of a polyimide film was prepared, attached to the lead of the lead frame, and then cured at 150 ° C. for 2 hours to fix the lead so as not to be scattered.
This lead frame was molded into the three-dimensional shape shown in the side view of FIG. 3, and then cut with a mold to obtain a lead frame with a splash prevention tape.
Solder paste is applied to the connection terminals of the first semiconductor device, and the obtained lead frame with a three-dimensional anti-scattering tape is arranged on four sides, and then the lead frame is attached to the first semiconductor device through a solder reflow device. Connected all at once.

  Next, flux was applied to the solder balls of the second semiconductor device, mounted according to the mounting position of the lead frame, and passed through the solder reflow device to obtain electrical connection between the upper and lower semiconductor devices. When the electrical connection of the obtained composite type semiconductor device was checked from the external connection terminal of the lower first semiconductor device, it was confirmed that all were connected.

As a first semiconductor device, a 35 mm square BGA type dummy semiconductor device having 144-pin solder ball external connection terminals was prepared. This semiconductor device has a structure in which a semiconductor element mounting portion is sealed with resin at a height of 1 mm at a central 20 mm square portion on a 35 mm square wiring board. Around the sealing portion, 100-pin connection terminals are formed at a pitch of 1 mm, of which 40 pins are connected to thermal vias and further electrically grounded.
Next, a 15 mm square BGA type dummy semiconductor device having 60-pin solder ball external connection terminals was prepared as a second semiconductor device. The solder balls of the second semiconductor device had a diameter of 0.5 mm and a ball pitch of 0.7 mm.

Leads aligned with the connection terminal of the first semiconductor device and the external connection terminal of the second semiconductor device are arranged on four sides, and the upper part of the resin-sealed portion of the first semiconductor device is covered at the center by 10 mm. A lead frame in which a corner metal plate was held by leads extending from four sides was made of a copper alloy.
Prepare an anti-spray tape with epoxy adhesive on one side of the polyimide film, and paste the lead frame to cover the tip of the lead and part of the metal plate from the back side of the terminal on which the second semiconductor device is mounted. After attaching, it was cured at 150 ° C. for 2 hours, and fixed so that the leads did not come apart.

This lead frame was molded into the three-dimensional shape shown in the sectional view of FIG. 4, and then cut with a mold to obtain a lead frame with a metal plate.
Solder paste was applied to the connection terminals of the first semiconductor device, silicone thermal conductive grease was applied to the area covered by the metal plate of the semiconductor mounting portion, and the resulting lead frame with the metal plate was placed. Thereafter, the lead frame was collectively connected to the first semiconductor device through a solder reflow device.

Next, flux was applied to the solder balls of the second semiconductor device, mounted according to the mounting position of the lead frame, and passed through the solder reflow device to obtain electrical connection between the upper and lower semiconductor devices.
When the electrical connection of the obtained composite type semiconductor device was checked from the external connection terminal of the lower first semiconductor device, it was confirmed that all were connected. In addition, the metal plate is in close contact with the semiconductor mounting portion of the first semiconductor device via the thermal conductive grease.

The composite semiconductor device of the present invention can obtain electrical connection reliably while widening the gap between the upper and lower semiconductor devices, and can mount a small semiconductor device on the upper side. Can be combined.
Furthermore, a PoP type semiconductor device that can efficiently dissipate heat generated from the lower semiconductor device can be obtained.

An example of the manufacturing method of the composite type semiconductor device of this invention is shown. Another example of the method for manufacturing a composite semiconductor device of the present invention (an example in which the second semiconductor device is mounted in advance on another wiring board) will be described. An example of the top view and side view of a lead frame used for the present invention is shown. An example of the top view and sectional view of the lead frame which formed the metal plate with a lead used for the present invention and the lead integrally with the anti-scattering tape is shown. An example of the manufacturing method of the composite type semiconductor device of this invention is shown. An example of the top view and sectional view of the lead frame which formed the metal plate with a lead used for the present invention and the lead integrally with the anti-scattering tape is shown. Another example of the method for manufacturing a composite semiconductor device of the present invention (an example in which the second semiconductor device is mounted in advance on another wiring board) will be described.

Claims (17)

A composite semiconductor device configured by stacking a plurality of semiconductor devices including a first semiconductor device and a second semiconductor device, wherein the external connection terminal of the first semiconductor device and the second semiconductor device external connections and terminals Ri Na is connected by a lead frame, in a central portion of the lead frame, the composite semiconductor device metal plate so as to cover the upper surface of the first semiconductor device is characterized that you have placed . A metal plate placed at the center of the lead frame so as to cover the upper surface of the first semiconductor device is connected to an external connection terminal of the first semiconductor device by one or more leads formed integrally with the metal plate. The composite semiconductor device according to claim 1 , wherein the compound semiconductor device is fixedly connected. The external connection terminal of the first semiconductor device, the composite semiconductor device according to claim 1 or 2, characterized in that a thermal via which is connected to the metal plate and the leads are integrally formed. Complex type semiconductor device according to any one of claims 1 to 3, characterized in that said first placed on a metal plate so as to cover the upper surface of the semiconductor device is electrically grounded. Composite according to any one of claims 1 to 4, characterized in that said first upper surface leading in loose prevention tape to the placed metal plate on cover the semiconductor device is fixed Type semiconductor device. It said first upper surface placed on the metal plate and the lead so as to cover the semiconductor device, in any one of claims 1 to 4, characterized in that it is fixed in the same plane by loose preventing tape The composite semiconductor device described. Complex type semiconductor device according to any one of claims 1 to 6, characterized in that the thermal vias to the external connection terminal of the second semiconductor device is formed. And one of the first semiconductor device or the metal plate, the composite according to any one of claims 1 to 7, a distance between the second semiconductor device is characterized in that it is a 1μm~4mm Semiconductor device. Complex type semiconductor device according to any one of claims 1 to 8, wherein the first semiconductor device is a BGA type semiconductor device. Any one or both of said first and second semiconductor devices is, as claimed in claim 1-8, characterized in that on a wiring board is obtained by mounting a plurality of semiconductor devices and discrete passive components 2. A composite semiconductor device according to claim 1. (A) A metal plate is formed integrally with the metal plate and covered with one or more leads extending from the periphery so as to cover the upper surface of the first semiconductor device and to be positioned at the center of the lead frame. Fixing on the first semiconductor device;
(B) connecting the lead frame formed into a three-dimensional shape to a connection terminal formed on a surface opposite to the external connection terminal of the first semiconductor device;
(C) connecting an external connection terminal of a second semiconductor device to the opposite end of the lead frame;
The method of manufacturing a composite semiconductor device according to claim 1, comprising: (A) a step of integrating the metal plate and the lead frame so that the metal plate is located at the center of the lead frame;
( B ) A lead frame that is placed so that a metal plate covers the upper surface of the first semiconductor device and is molded into a three-dimensional shape is connected to a connection terminal formed on the surface opposite to the external connection terminal of the first semiconductor device. Connecting, and
( C ) connecting an external connection terminal of the second semiconductor device to the opposite end of the lead frame;
The method of manufacturing a composite semiconductor device according to claim 1, comprising : 13. The method of manufacturing a composite semiconductor device according to claim 12, wherein the lead frame is a lead frame formed into a three-dimensional shape by fixing the lead on a metal plate with a loosening prevention tape. 13. The composite semiconductor device according to claim 12 , wherein the lead frame is a lead frame formed into a three-dimensional shape by fixing the lead to the same plane as the metal plate with the anti-scattering tape. Method. The method of manufacturing a composite semiconductor device according to claim 11 , wherein the lead frame has a linearly aligned shape. The method of manufacturing a composite semiconductor device according to claim 11 , wherein the lead frame has a shape aligned in a square shape.   The method for manufacturing a composite semiconductor device according to any one of claims 13 to 16, wherein the anti-scatter tape has a structure in which an adhesive is applied to a polyimide film.

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