JP4846455B2 - A method for manufacturing a nitride ceramic circuit board. - Google Patents
A method for manufacturing a nitride ceramic circuit board. Download PDFInfo
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- JP4846455B2 JP4846455B2 JP2006151543A JP2006151543A JP4846455B2 JP 4846455 B2 JP4846455 B2 JP 4846455B2 JP 2006151543 A JP2006151543 A JP 2006151543A JP 2006151543 A JP2006151543 A JP 2006151543A JP 4846455 B2 JP4846455 B2 JP 4846455B2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
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Description
本発明は、窒化物セラミックス回路基板の製造方法に関する。 The present invention relates to a method for manufacturing a nitride ceramic circuit board.
パワーモジュール等に利用される半導体装置用回路基板に、熱伝導率やコスト、安全性等の点から、アルミナ、ベリリア、窒化ケイ素、窒化アルミニウム等のセラミックス基板が利用されている。これらのセラミックス基板に、CuやAl等の金属回路や放熱板を接合し回路基板としている。これらは、樹脂基板や樹脂層を絶縁材とする金属基板に対し、高い絶縁性が安定して得られるのが特長である。これらのセラミックスのうちで、窒化アルミニウムは、高熱伝導率、高絶縁性、無害性等の点で特に好適な材料である。 Ceramic substrates such as alumina, beryllia, silicon nitride, and aluminum nitride are used for circuit boards for semiconductor devices used for power modules and the like from the viewpoint of thermal conductivity, cost, safety, and the like. These ceramic substrates are joined with a metal circuit such as Cu or Al or a heat sink to form a circuit substrate. These are characterized in that high insulating properties can be stably obtained with respect to a metal substrate using a resin substrate or a resin layer as an insulating material. Among these ceramics, aluminum nitride is a particularly suitable material in terms of high thermal conductivity, high insulation, harmlessness, and the like.
このような回路基板は、セラミックス基板と金属板からなる接合体を製造する工程を経て製造されるが、生産性を高める観点から、種々の取り組みがなされている。例えばセラミックスグリーンシートを所要枚数連結した状態で焼成後、分割する方法(特許文献1)、或いは、銅回路板を有する窒化アルミニウム基板において、分割線を用いることにより複数個の配線基板を同時に製造する方法等が挙げられている(特許文献2)。
しかしながら特許文献1に示す方法では、焼成中に連結した部分にかかる熱応力によって連結部分よりクラックが発生するため生産性が低下することがあり、また特許文献2の技術には、基板そのものに一定以上の強度が必要であり、分割線の深さも限定される等の課題がある。 However, in the method shown in Patent Document 1, productivity may be reduced because cracks are generated from the connected portions due to thermal stress applied to the connected portions during firing. There is a problem that the above strength is required and the depth of the dividing line is limited.
本発明の目的は、絶縁性が良好で、且つ生産性に優れた窒化物セラミックス回路基板の製造方法を提供することである。 An object of the present invention is to provide a method for manufacturing a nitride ceramic circuit board having good insulation and excellent productivity.
すなわち本発明は、窒化物セラミックス基板にレーザーでスクライブルラインを入れ基板を分割し回路基板を製造する方法において、窒化物セラミックス基板に不連続なレーザー孔より構成されるスクライブルラインを入れた後、活性金属法にて金属板と接合し、エッチング法にて回路を形成する窒化物セラミックス回路基板の製造方法であり、エッチングによって回路を形成した後、金属板除去部分に残存するろう材、その合金層、窒化物層等を除去することを特徴とする窒化物セラミックス回路基板の製造方法であり、レーザー孔の間隔が0.2mm以内(0を含まず)である窒化物セラミックス回路基板の製造方法であり、レーザー孔の断面先端角度が30度以上である窒化物セラミックス回路基板の製造方法である。さらに、レーザーが、1kHz以上のパルス周波数で50〜500Wの炭酸ガスレーザーであることを特徴とする窒化物セラミックス回路基板の製造方法である。 That is, the present invention relates to a method of manufacturing a circuit board by inserting a scribe line with a laser into a nitride ceramic substrate and dividing the substrate, and after inserting a scribe line composed of discontinuous laser holes in the nitride ceramic substrate. , A method of manufacturing a nitride ceramic circuit board that is joined to a metal plate by an active metal method and forms a circuit by an etching method. After forming a circuit by etching, the brazing material remaining in the metal plate removal portion, A method for producing a nitride ceramic circuit board, comprising removing an alloy layer, a nitride layer, etc., and producing a nitride ceramic circuit board having a laser hole interval of 0.2 mm or less (not including 0) This is a method for manufacturing a nitride ceramic circuit board in which the tip angle of the cross section of the laser hole is 30 degrees or more. Furthermore, the laser is a carbon dioxide gas laser of 50 to 500 W at a pulse frequency of 1 kHz or more.
本発明によれば、絶縁性が良好で、且つ生産性に優れた窒化物セラミックス回路基板の製造方法が提供される。 ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the nitride ceramic circuit board which is excellent in insulation and excellent in productivity is provided.
窒化物セラミックス基板は特に限定されないが、窒化アルミニウム基板または窒化珪素基板の使用が好ましい。また、その厚みは特に限定されないが、0.3〜3.0mm程度のものが一般的である。 The nitride ceramic substrate is not particularly limited, but it is preferable to use an aluminum nitride substrate or a silicon nitride substrate. Moreover, although the thickness is not specifically limited, the thing of about 0.3-3.0 mm is common.
本発明においては、不連続なレーザー孔より構成されるスクライブルラインを形成することを特徴とする。窒化物セラミックスは、一般的な酸化物セラミックスに比べレーザーによる熱分解で金属成分が析出しやすいため、連続的にスクライブルラインを入れた場合、熱の蓄積による金属析出物により絶縁性が低下したり、スクライブルラインの深さが一定でなくなるという課題があった。不連続なレーザー孔で構成することで熱の蓄積も緩和され、窒化物セラミックス基板からの金属成分の析出も少量で均一となるため、生産性の向上と共に信頼性も向上するものである。 The present invention is characterized in that a scribe line composed of discontinuous laser holes is formed. Compared to general oxide ceramics, nitride ceramics are more likely to deposit metal components by thermal decomposition with laser. Therefore, when a scribe line is inserted continuously, the metal precipitates due to heat accumulation lower the insulation. There is also a problem that the depth of the scribe line is not constant. Constituting with discontinuous laser holes alleviates the accumulation of heat, and the deposition of metal components from the nitride ceramic substrate becomes uniform in a small amount, so that productivity and reliability are improved.
レーザー孔の間隔は、0.2mm以内(0を除く)にあることがより好ましい。間隔が0.2mmを超えてしまうと、スクライブルラインに沿って分割できない場合があり、その分割面から回路方向へクラックが発生してしまい、耐電圧が低下してしまうことがある。
また、レーザー孔の断面先端角度は、30度以上であることが好ましい。レーザー孔の断面先端角度が30度未満の場合、スクライブルラインを分割する際に、分割し辛くなったり、レーザー孔内に接合ろう材が残留してしまい電気的な絶縁がとれなくなるという不具合が発生する場合がある。レーザー孔の最適な大きさ(直径)は、レーザー孔の深さ、角度により適宜決められるが、0.04mm〜0.5mmが一般的である。
The distance between the laser holes is more preferably within 0.2 mm (excluding 0). If the distance exceeds 0.2 mm, it may not be possible to divide along the scribe line, and cracks may occur in the circuit direction from the dividing surface, which may reduce the withstand voltage.
The cross-sectional tip angle of the laser hole is preferably 30 degrees or more. When the tip angle of the cross section of the laser hole is less than 30 degrees, there is a problem that when dividing the scribe line, it becomes difficult to divide or the brazing filler metal remains in the laser hole and electrical insulation cannot be obtained. May occur. The optimum size (diameter) of the laser hole is appropriately determined according to the depth and angle of the laser hole, but is generally 0.04 mm to 0.5 mm.
本発明においては、窒化物セラミックス基板にスクライブル加工を行った後、回路となる金属板を接合しエッチング法にて回路形成を行う。スクライブル加工時に窒化物セラミックス基板から析出した金属成分を、エッチング時に金属板と同時に除去でき、より信頼性を高めることができる。 In the present invention, after scribing the nitride ceramic substrate, a metal plate to be a circuit is joined and a circuit is formed by an etching method. The metal component deposited from the nitride ceramic substrate at the time of scribing can be removed at the same time as the metal plate at the time of etching, and the reliability can be further improved.
本発明で用いられるレーザーは、炭酸ガスレーザー、YAGレーザー等であるが、窒化物セラミックスの吸収波長との兼ね合いで、YAGレーザーでは加工時間がかかるので炭酸ガスレーザーが好ましい。中でも、1kHz以上のパルス周波数で50〜500Wの炭酸ガスレーザーが熱ショックの緩和にも効果があるので好適である。 The laser used in the present invention is a carbon dioxide gas laser, a YAG laser, or the like, but a carbon dioxide gas laser is preferable because a processing time is required for the YAG laser in consideration of the absorption wavelength of nitride ceramics. Among them, a carbon dioxide laser of 50 to 500 W at a pulse frequency of 1 kHz or more is preferable because it has an effect on mitigating heat shock.
スクライブルラインの深さはセラミックス基板厚みの1/4〜1/3であることが好ましい。深さが1/4よりも浅いとスクライブルラインに沿って切り離すことが困難となり、1/3よりも大きいと、半導体チップ等を実装する時などに割れる場合がある。分割溝は、セラミックス基板の一方の面にのみ形成させてもよく、表裏両面に形成させてもよい。
また加工速度としては、通常の1000〜5000mm/分で行っても問題ない。
The depth of the scribe line is preferably ¼ to 3 of the ceramic substrate thickness. If the depth is less than 1/4, it is difficult to separate along the scribe line, and if it is greater than 1/3, it may break when a semiconductor chip or the like is mounted. The dividing groove may be formed only on one surface of the ceramic substrate, or may be formed on both the front and back surfaces.
Moreover, as a processing speed, even if it carries out by normal 1000-5000 mm / min, there is no problem.
接合される金属板の厚みは特に限定されないが、流れる電流に応じて適宜決められる。一般に、0.1〜0.5mmのものが用いられることが多い。金属板の純度は90%以上であることが好ましい。純度が90%より低いと、セラミックス基板と金属板を接合する際、金属板とろう材の反応が不十分となったり、金属板が硬くなりセラミック回路基板の信頼性が低下する場合がある。また、用途によっては、複合金属板を用いても構わない。 Although the thickness of the metal plate to be joined is not particularly limited, it can be appropriately determined according to the flowing current. In general, a thickness of 0.1 to 0.5 mm is often used. The purity of the metal plate is preferably 90% or more. When the purity is lower than 90%, when the ceramic substrate and the metal plate are joined, the reaction between the metal plate and the brazing material may be insufficient, or the metal plate may become hard and the reliability of the ceramic circuit substrate may be reduced. Depending on the application, a composite metal plate may be used.
窒化物セラミックス基板と金属板の接合には、一般に、接合材を用いない溶湯法、活性金属ろう付け法のいずれも採用することができるが、生産性が良く、しかも比較的低温で接合ができる活性金属ろう付け法が好適である。
Si、Mg、Cu、Al、Ge、Ag、Ti、Mg、Zrなどの金属合金がろう材として好適である。ろう材は、ペースト又は箔として用いられる。ろう材は、窒化物セラミックス基板、または、金属板のどちらに塗布、或いは配置してもよく、合金箔を用いる場合は、予め金属板と合金箔をクラッド化しておくこともできる。
In general, either a molten metal method that does not use a bonding material or an active metal brazing method can be used for bonding a nitride ceramic substrate and a metal plate, but the productivity is good and bonding can be performed at a relatively low temperature. An active metal brazing method is preferred.
Metal alloys such as Si, Mg, Cu, Al, Ge, Ag, Ti, Mg, and Zr are suitable as the brazing material. The brazing material is used as a paste or foil. The brazing material may be applied to or placed on either the nitride ceramic substrate or the metal plate. When an alloy foil is used, the metal plate and the alloy foil may be clad in advance.
ろう材の塗布量は、乾燥基準で5〜20mg/cm2 が好ましい。塗布量が5mg/cm2 未満では未反応の部分が生じる場合があり、一方、20mg/cm2を超えると、接合層を除去する時間が長くなり生産性が低下する場合がある。塗布方法は特に限定されず、スクリーン印刷法、ロールコーター法等の公知の塗布方法を採用できる。 The coating amount of the brazing material is preferably 5 to 20 mg / cm 2 on a dry basis. If the coating amount is less than 5 mg / cm 2 , an unreacted portion may be generated. On the other hand, if it exceeds 20 mg / cm 2 , the time for removing the bonding layer may become long and productivity may be lowered. The coating method is not particularly limited, and a known coating method such as a screen printing method or a roll coater method can be employed.
窒化物セラミックス回路基板に回路パターンを形成するため、金属板にエッチングレジストを塗布してエッチングする。 In order to form a circuit pattern on the nitride ceramic circuit board, an etching resist is applied to the metal plate and etched.
エッチングレジストに関して特に制限はなく、例えば、一般に使用されている紫外線硬化型や熱硬化型のものが使用できる。エッチングレジストの塗布方法に関しても特に制限はなく、例えばスクリーン印刷法等の公知の塗布方法が採用できる。また、エッチング液に関しても特に制限はなく、例えば、塩化第2鉄溶液、塩化第2銅溶液、硫酸、過酸化水素水等が使用できるが、好ましいものとして、塩化第2鉄溶液、或いは塩化第2銅溶液が挙げられる。 There is no restriction | limiting in particular regarding an etching resist, For example, the ultraviolet curing type and thermosetting type generally used can be used. There is no particular limitation on the etching resist coating method, and a known coating method such as a screen printing method can be employed. The etching solution is not particularly limited, and for example, a ferric chloride solution, a cupric chloride solution, sulfuric acid, a hydrogen peroxide solution, etc. can be used. 2 copper solution.
エッチングによって不要な金属部分を除去した窒化物セラミックス回路基板には、塗布したろう材、その合金層、窒化物層等が残っており、ハロゲン化アンモニウム水溶液、硫酸、硝酸等の無機酸、過酸化水素水を含む溶液を用いて、それらを除去するのが一般的である。 The nitride ceramic circuit board from which unnecessary metal parts have been removed by etching has the applied brazing material, its alloy layer, nitride layer, etc. remaining, inorganic acid such as aqueous solution of ammonium halide, sulfuric acid, nitric acid, peroxide It is common to remove them using a solution containing hydrogen water.
本発明に係るめっきレジストに関して特に制限はなく、溶剤乾燥タイプインク、UV硬化タイプインク等が使用できる。塗布方法は特に限定されず、スクリーン印刷法、ロールコーター法等の公知の塗布方法を採用できる。塗布厚は、乾燥後で0.005〜0.07mmの厚みとなるように塗布することが望ましい。厚みが0.005mmより薄いと、部分的に金属が表出してしまう場合があり、一方、0.07mmより厚いと、めっきレジストの除去に時間がかかり、生産性が低下する場合がある。 There is no restriction | limiting in particular regarding the plating resist which concerns on this invention, A solvent dry type ink, UV hardening type ink, etc. can be used. The coating method is not particularly limited, and a known coating method such as a screen printing method or a roll coater method can be employed. It is desirable that the coating thickness is 0.005 to 0.07 mm after drying. If the thickness is less than 0.005 mm, the metal may be partially exposed. On the other hand, if the thickness is more than 0.07 mm, it takes time to remove the plating resist, and the productivity may decrease.
めっき処理に関して特に制限はないが、作業性、コスト等の面から、無電解ニッケルめっき、無電解ニッケル金めっき、はんだめっきが好ましいものとして挙げられる。なお、めっき層の厚みは特に限定されないが、2〜8μmが望ましい。めっき厚が、2μm未満であると、はんだ濡れ性、ワイヤーボンディング特性等の実装特性に悪影響を与える場合がある。一方、めっき厚みが8μmを超えると、めっき被膜の剥がれ等により基板特性に悪影響を及ぼす場合がある。 Although there is no restriction | limiting in particular regarding a plating process, From surfaces, such as workability | operativity and cost, electroless nickel plating, electroless nickel gold plating, and solder plating are mentioned as a preferable thing. The thickness of the plating layer is not particularly limited, but is preferably 2 to 8 μm. If the plating thickness is less than 2 μm, it may adversely affect mounting characteristics such as solder wettability and wire bonding characteristics. On the other hand, if the plating thickness exceeds 8 μm, the substrate characteristics may be adversely affected due to peeling of the plating film or the like.
めっきレジストの除去方法に関して特に制限はなく、例えば、エタノールやトルエンのような有機溶剤を用いて除去する方法や、アルカリ水溶液に浸浸させる方法が挙げられる。 There is no particular limitation on the method for removing the plating resist, and examples thereof include a method of removing using an organic solvent such as ethanol and toluene, and a method of immersion in an alkaline aqueous solution.
このようにして作製された窒化物セラミックス回路基板は、はんだによりベース板や半導体素子等の電子部品と接合される。はんだの種類は特に限定されないが、通常、錫、鉛、銀、ビスマス等が一般に使用される。はんだ付け方法は特に限定されないが、例えば、はんだペーストをスクリーン印刷法等で所定の部分に塗布し、部品等を搭載後、はんだが溶融する温度の炉内にいれる方法が挙げられる。はんだ層は、金属回路側面に接触しない方が、窒化物セラミックス回路基板の信頼性の点で好ましい。 The nitride ceramic circuit board thus manufactured is joined to an electronic component such as a base plate or a semiconductor element by solder. The type of solder is not particularly limited, but usually tin, lead, silver, bismuth and the like are generally used. The soldering method is not particularly limited. For example, there is a method in which a solder paste is applied to a predetermined portion by a screen printing method or the like, and a component or the like is mounted and then placed in a furnace at a temperature at which the solder melts. The solder layer is preferably not in contact with the side surface of the metal circuit from the viewpoint of the reliability of the nitride ceramic circuit board.
[実施例1〜6,比較例1〜7]
窒化アルミニウム基板の一方の主面に、各セット毎に切り離すことができるようにレーザー加工にて分割溝を表1に示す加工条件で形成した。レーザー加工は市販装置(進和テック社製商品名「LMP−221−200」炭酸ガスレーザー使用)を用いた。その後、窒化アルミニウム基板の両主面に、活性金属ろう材ペースト(金属成分:Ti3%−Zr2%−Ag90%−Cu5%を含むポリイソブチルメタクリレートのペースト)を塗布(塗布量:10mg/cm2)してから銅板(寸法:61mm×51mm×0.3mm:同和鉱業製;無酸素銅板)を重ね、850℃×1時間、真空中にて加熱して接合した。その後、エッチングレジスト(太陽インキ製造製:製品名UVR150G)を所定形状(L字と逆L字の組合せ形状)に印刷してから塩化銅水溶液にてエッチングをし、回路を形成させた後、基板表面に無電解ニッケルメッキを施し、回路基板を作成した。この回路基板を、手で折り曲げることによって、分割溝に沿って切り離し、4個の回路基板を製造した。
[Examples 1-6, Comparative Example 1 to 7
On one main surface of the aluminum nitride substrate, division grooves were formed by laser processing under the processing conditions shown in Table 1 so that each set could be separated. Laser processing was performed using a commercially available device (trade name “LMP-221-200” carbon dioxide laser manufactured by Shinwa Tech Co., Ltd.). Thereafter, an active metal brazing paste (metal component: a paste of polyisobutyl methacrylate containing Ti 3% -Zr 2% -Ag 90% -Cu 5%) is applied to both main surfaces of the aluminum nitride substrate (coating amount: 10 mg / cm 2 ). Then, a copper plate (dimensions: 61 mm × 51 mm × 0.3 mm: manufactured by Dowa Mining Co., Ltd .; oxygen-free copper plate) was stacked and heated and bonded in a vacuum at 850 ° C. for 1 hour. After that, etching resist (manufactured by Taiyo Ink Manufacturing Co., Ltd .: product name UVR150G) is printed in a predetermined shape (combined shape of L shape and reverse L shape), then etched with aqueous copper chloride solution to form a circuit, and then the substrate The surface was plated with electroless nickel to produce a circuit board. This circuit board was cut along the dividing grooves by bending it by hand, and four circuit boards were manufactured.
これらの回路基板の製造過程における、金属析出物の有無、絶縁特性、分割時の分割不良率を以下に従って測定した(n=20)。結果を表1に示す。 In the process of manufacturing these circuit boards, the presence / absence of metal precipitates, insulation characteristics, and the division failure rate at the time of division were measured as follows (n = 20). The results are shown in Table 1.
〈測定方法〉
(1)金属析出物の有無
金属析出物の有無はレーザー加工後、光学顕微鏡にて確認した。析出物はSEM/EDAX分析で元素分析を行って確認した。
(2)絶縁特性
回路基板の表裏間の絶縁抵抗を、絶縁抵抗計(安藤電気社製「VMG−1000」)にて測定した。
(3)分割不良率
レーザー加工を行ったスクライブルライン以外で、分割された基板の数量を調べ、不良率を求めた。スクライブルライン以外で分割されたかは、光学顕微鏡(倍率100倍)にて確認した。
〈使用材料〉
窒化アルミニウム基板 : 電気化学工業製、商品名「ANP」(寸法:60mm×50mm×0.635mm、熱伝導率:150W/m・k、曲げ強さ:350MPa)
窒化珪素基板:電気化学工業製、商品名「SNP」(寸法:60mm×50mm×0.635mm、熱伝導率:70W/m・k、曲げ強さ:700MPa)
酸化アルミニウム基板 : 京セラ製、商品名「A−476」
<Measuring method>
(1) Presence / absence of metal deposits Presence / absence of metal deposits was confirmed with an optical microscope after laser processing. Precipitates were confirmed by elemental analysis by SEM / EDAX analysis.
(2) Insulation characteristics The insulation resistance between the front and back of the circuit board was measured with an insulation resistance meter ("VMG-1000" manufactured by Ando Electric Co., Ltd.).
(3) Divided defect rate Except for the scribble line subjected to laser processing, the number of divided substrates was examined to obtain the defect rate. It was confirmed with an optical microscope (magnification 100 times) whether it was divided other than the scribe line.
<Materials used>
Aluminum nitride substrate: manufactured by Denki Kagaku Kogyo, trade name “ANP” (dimensions: 60 mm × 50 mm × 0.635 mm, thermal conductivity: 150 W / m · k, bending strength: 350 MPa)
Silicon nitride substrate: manufactured by Denki Kagaku Kogyo, trade name “SNP” (dimensions: 60 mm × 50 mm × 0.635 mm, thermal conductivity: 70 W / m · k, bending strength: 700 MPa)
Aluminum oxide substrate: Kyocera product name “A-476”
Claims (1)
In a method of manufacturing a circuit board by inserting a scribe line with a laser into a nitride ceramic substrate and manufacturing the circuit board, the nitride ceramic substrate is passed through the center of the hole with a carbon dioxide laser of 50 to 500 W at a pulse frequency of 1 kHz or more. After inserting a scribe line composed of discontinuous laser holes with a cross-sectional tip angle of the laser hole, which is the intersection angle of the tangent lines at both ends in the cross section to be 30 degrees or more, and the interval does not include 0 and is within 0.2 mm Then, it is joined to a metal plate by an active metal brazing method, and a circuit is formed by an etching method. Then, the brazing material, its alloy layer, and nitride layer remaining in the metal plate removal portion are removed, and a method for manufacturing a nitride ceramic circuit board.
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| JP2006151543A JP4846455B2 (en) | 2006-05-31 | 2006-05-31 | A method for manufacturing a nitride ceramic circuit board. |
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| JP2006151543A JP4846455B2 (en) | 2006-05-31 | 2006-05-31 | A method for manufacturing a nitride ceramic circuit board. |
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| JP4846455B2 true JP4846455B2 (en) | 2011-12-28 |
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| JP2013175667A (en) * | 2012-02-27 | 2013-09-05 | Nippon Steel & Sumikin Electronics Devices Inc | Multi-piece type ceramic circuit board |
| JP2019009333A (en) * | 2017-06-27 | 2019-01-17 | 三菱マテリアル株式会社 | Method for manufacturing ceramic-metal joined body, method for producing ceramic circuit board, and ceramic-metal joined body |
| JP7741725B2 (en) | 2019-03-01 | 2025-09-18 | デンカ株式会社 | Ceramic green sheet, ceramic substrate, method for manufacturing ceramic green sheet, and method for manufacturing ceramic substrate |
| JP7606449B2 (en) * | 2019-03-15 | 2024-12-25 | デンカ株式会社 | Method for manufacturing silicon nitride substrate and silicon nitride base material |
| CN110113881B (en) * | 2019-04-04 | 2022-02-18 | 昆山市柳鑫电子有限公司 | Method for removing active metal welding layer in aluminum nitride ceramic circuit board |
| CN114127918A (en) | 2019-07-31 | 2022-03-01 | 电化株式会社 | Ceramic substrate and method for manufacturing same, composite substrate and method for manufacturing same, and circuit substrate and method for manufacturing same |
| CN112469201B (en) * | 2020-11-24 | 2021-12-07 | 绍兴德汇半导体材料有限公司 | Method for manufacturing copper-clad lining plate |
| JP7165842B1 (en) * | 2021-02-18 | 2022-11-04 | デンカ株式会社 | Ceramic plate and method for manufacturing ceramic plate |
| CN118435706A (en) | 2021-12-22 | 2024-08-02 | 株式会社东芝 | Ceramic scribe circuit board, ceramic circuit board, method for manufacturing ceramic scribe circuit board, method for manufacturing ceramic circuit board, and method for manufacturing semiconductor device |
| EP4542637A1 (en) * | 2022-06-14 | 2025-04-23 | Kabushiki Kaisha Toshiba | Ceramic substrate, ceramic circuit substrate, semiconductor device, ceramic substrate manufacturing method, and ceramic divided substrate manufacturing method |
| CN115500011B (en) * | 2022-11-03 | 2023-02-03 | 四川富乐华半导体科技有限公司 | Positioning method for DPC ceramic substrate processing |
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| JP2000049427A (en) * | 1998-07-27 | 2000-02-18 | Denki Kagaku Kogyo Kk | Joint and circuit board using the same |
| JP4755754B2 (en) * | 2000-12-06 | 2011-08-24 | 株式会社東芝 | Silicon nitride substrate, silicon nitride circuit substrate using the same, and manufacturing method thereof |
| JP2004058118A (en) * | 2002-07-31 | 2004-02-26 | Kyocera Corp | Method for drilling ceramic substrate |
| JP2005216969A (en) * | 2004-01-27 | 2005-08-11 | Matsushita Electric Works Ltd | Manufacturing method for solid circuit board |
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