JP4846505B2 - Light emitting device and manufacturing method thereof - Google Patents

Description

 The present invention relates to a light-emitting device including a light-emitting diode as a light-emitting element and a method for manufacturing the light-emitting device, and more particularly to a light-emitting device having an improved structure for protecting and supplying power to the light-emitting element.

In a light emitting device using a gallium nitride (GaN) light emitting diode (LED) as a light emitting element, the amount of light per light emitting element is small. Therefore, when such a light-emitting device is applied to a lighting device, several hundreds of light-emitting devices are mounted on one lighting device to secure a necessary amount of light. For example, a traffic light or the like uses several hundred light emitting devices called a shell type.
Moreover, as a light-emitting device to be attached to various devices, for example, a device in which light-emitting elements are collectively mounted on an insulating substrate is disclosed (for example, see Patent Document 1).
However, in such a light emitting device, when the angle at which the light emitted from the light emitting element is emitted exceeds a critical angle determined by the refractive index between the resin applied on the light emitting element and air, the light exceeding this critical angle is used. Cannot be taken out into the air. For this reason, part of the light emitted from the light emitting element (light whose outgoing angle exceeds the critical angle) cannot be extracted from the light emitting device and propagates in the lateral direction in the light emitting device.

The critical angle of light emitted from the light emitting element and .theta.c, and the refractive index n _c of the _resin, the refractive index of air and n _a, the critical angle .theta.c is expressed by the following equation (1).
θc = arcsin (n _a / n _c ) (1)
For example, when a resin having a refractive index of about 1.5 is used and an LED is used as a light-emitting element, the refractive index of air is substantially 1, so that the light vertically incident on the resin surface from the LED and the light When the trajectory is 0 °, the light incident on the resin surface at an angle within ± 40 ° with respect to the light incident perpendicular to the resin surface is not totally reflected at the interface between the resin and air. To the outside. On the other hand, light incident on the resin surface at an angle of 40 ° to 90 ° with respect to the light incident perpendicularly to the resin surface is totally reflected on all the resin surfaces and cannot be emitted to the outside from the upper surface of the resin. . The light totally reflected on the resin surface is absorbed by the insulating substrate or is emitted to the outside of the resin from a surface parallel to the resin surface. Therefore, a light emitting device in which light emitting elements are collectively mounted on such an insulating substrate has a specific illuminance distribution and is difficult to use as a general lighting device.

Therefore, in order to solve such a problem, the reflection having a reflective surface inclined outward so that the width of the concave section where the LED is mounted widens as it approaches the front from the bottom surface of the insulating substrate on which the LED is mounted. A light emitting device provided with a plate is disclosed (for example, see Patent Document 2).
For example, Patent Document 2 discloses a shape of the reflecting surface of the reflecting plate in which the opening diameter of the concave portion is widened at a certain angle from the surface of the insulating substrate on which the LED is mounted.
However, when the refractive index of the resin is 1.5, the angle of the reflection surface is 65 ° or less so that the light emitted from the LED is reflected by the reflection surface and emitted to the outside of the resin. There is a need. In a light emitting device having a reflective surface having a shape as disclosed in Patent Document 2, the angle θ in the vicinity of the surface of the insulating substrate on which the LED is mounted is the largest. The light emitted from the LED is more disadvantageous in terms of light extraction efficiency because the light intensity is distributed more forward than the light emitted from the bulb, etc. As a result, it was unsuitable as a reflective surface of LED.

Further, a light emitting device using a silicon substrate in which a reflection surface for reflecting light emitted from an LED is formed by anisotropic etching is disclosed (for example, see Patent Document 3 and Patent Document 4). In general, when anisotropic etching is performed on a silicon substrate, a quadrangular pyramid-shaped recess surrounded by a (111) plane having the slowest etching rate is formed. For this reason, the boundary portion of the surface forming the quadrangular pyramid becomes dark, and when the LED is mounted in the concave portion of the quadrangular pyramid, the brightness is distributed in a plane parallel to the LED, which is not preferable as a point light source.
For example, in a lighting device using a gallium nitride LED, white light is obtained by transmitting blue light emitted from gallium nitride through a resin mixed with phosphors such as yellow, green, and red. For this reason, it is known that the color of light emitted from the illumination device differs depending on the distance that blue light has passed through the resin. Therefore, when a gallium nitride-based LED is mounted in a quadrangular pyramid-shaped recess to produce a lighting device, the light reflected by the ridge part of the square pyramid and the light reflected by the center line part of the square pyramid plane are colored. However, there is a problem that it is difficult to use this illumination device as a white light source.
Japanese Patent No. 3434714 JP 2004-327863 A JP 2001-345508 A JP 2005-327820 A

 The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a light emitting device that is excellent in emission efficiency of light emitted from a light emitting element and has uniform light brightness, and a method for manufacturing the same.

The present invention relates to a silicon substrate on which metal wiring is formed, a light emitting element mounted on the silicon substrate, and a surface disposed on the silicon substrate, surrounding the light emitting element, and from the surface on which the light emitting element is mounted. A light emitting device comprising: a metal plate having a reflective surface inclined outward so as to gradually widen; and a sealing resin for sealing the light emitting element, the surface of the silicon substrate facing the light emitting element When the angle between the reflecting surface theta, a refractive index _{n c} of the sealing resin, and the refractive index of air and _{n a,} wherein theta is _{θ <(90 ° + arcsin (} n a / n c)) / 2 to satisfy the relationship, the silicon substrate through the thickness direction, the through wiring is provided to connect the metal wiring formed on the surface and the back surface of the silicon substrate, the gap of the center line portion of the through wiring Is filled with through-hole sealing resin To provide a light emitting device.

The θ preferably satisfies the relationship of 40 ° ≦ θ <(90 ° + arcsin (n _a / n _c )) / 2.

 The metal wiring and / or the metal plate is preferably one selected from the group consisting of aluminum, nickel, silver, tin, platinum and palladium.

 It is preferable that a metal oxide film made of one selected from the group consisting of silicon dioxide, titanium dioxide and aluminum oxide is formed on the reflecting surface.

The present invention provides a silicon substrate on which metal wiring is formed, a light emitting element mounted on the silicon substrate, and a width that gradually increases from the surface on which the light emitting element is bonded to the silicon substrate. A method of manufacturing a light emitting device comprising a metal plate having a reflecting surface inclined outward and a sealing resin for sealing the light emitting element, wherein a large number of wafers are formed on one surface of the silicon substrate by a wafer process. Forming the metal wiring, forming a through hole from the other surface of the silicon substrate to the metal wiring, forming a plurality of through holes having the reflective surface in the metal plate, A step of bonding the silicon substrate and the metal plate so that a portion of the metal wiring on which the light emitting element is mounted is arranged at a central portion of the through hole, and a metal wiring is formed on the other surface of the silicon substrate You And a method of manufacturing a light-emitting device, comprising: forming a through-wiring in a through-hole formed in the silicon substrate; and filling a through-hole sealing resin in a gap in a central line portion of the through-wiring. Provide .

Preferably, after the step of bonding the silicon substrate and the metal plate, there is a step of polishing the silicon substrate using the metal plate as a support .

The light-emitting device of the present invention has a silicon substrate on which metal wiring is formed, a light-emitting element mounted on the silicon substrate, and a width gradually increased from the surface on which the light-emitting element is mounted and bonded to the silicon substrate. A light emitting device comprising a metal plate having a reflecting surface inclined outward so as to spread, and a sealing resin for sealing the light emitting element, the light emitting element side surface of the silicon substrate, an angle between the reflecting surface theta, and the refractive index of the sealing resin to _{n c,} the refractive index of air and _{n a,} wherein theta is _{θ <(90 ° + arcsin (} n a / n c)) / 2 of Since the relationship is satisfied, the light emitted from the light emitting element can be efficiently emitted outside the sealing resin. In addition, since a silicon substrate with high heat dissipation is used as the substrate on which the metal wiring for mounting the light emitting element is provided, the temperature rise of the light emitting element due to light emission, which is a problem particularly in a gallium nitride-based light emitting element, is suppressed. Can do.

 The method for manufacturing a light emitting device according to the present invention includes a silicon substrate on which metal wiring is formed, a light emitting element mounted on the silicon substrate, a surface bonded to the silicon substrate, and the surface on which the light emitting element is mounted. A method of manufacturing a light emitting device, comprising: a metal plate having a reflective surface inclined outward so as to gradually widen; and a sealing resin for sealing the light emitting element, wherein one surface of the silicon substrate A step of forming a large number of metal wirings by a wafer process, a step of forming a large number of through holes having the reflecting surface in the metal plate, and a portion of the metal wirings on which the light emitting element is mounted is formed of the through holes. Since there is a step of joining the silicon substrate and the metal plate so as to be arranged in the central part, 1000 or more metal wirings are collectively formed and a light emitting element is mounted on each metal wiring. More, it is possible to produce more than 1000 light-emitting device from a wafer. Therefore, the manufacturing cost of the light emitting device can be reduced. In addition, since 1000 or more light emitting elements can be mounted on the silicon substrate in one step, after the light emitting elements are mounted, any number of light emitting devices can be cut out, so that the mounting cost can be reduced. Furthermore, since the light emitting device can be cut into an arbitrary shape when the light emitting device is cut out, a light emitting device having a desired size can be obtained.

 Hereinafter, the present invention will be described in detail.

(1) First Embodiment FIG. 1 is a schematic view showing a first embodiment of the light emitting device of the present invention, where (a) is a plan view and (b) is a region indicated by X in (a). An enlarged view, (c), is a cross-sectional view taken along line AA of (b).
In FIG. 1, 10 is a light emitting device, 11 is a silicon substrate, 12 is a light emitting element, 13 is a metal plate, 14 is a sealing resin, 15 is a metal wiring, 16 is a gold wire, 17 is an insulating film, and 18 is a metal oxide. Membrane, 19 is insulating resin, 20 is a through hole sealing resin, 21 is a through hole, 22 is a through wiring, 23 is a solder bump, 24 is an adhesive, 25 is a reflective surface, 26 is a mounting surface, 27 is a recess, 28 Indicates a metal wiring, and 29 indicates a joint.
The light emitting device 10 according to this embodiment includes a silicon substrate 11 on which a metal wiring 15 is formed, a light emitting element 12 mounted on the silicon substrate 11, and an adhesive 24 bonded to the silicon substrate 11, and the light emitting element 12. And a sealing resin that seals the light emitting element 12, and a metal plate 13 having a reflective surface 25 inclined outward so that the width gradually increases from the surface on which the substrate is mounted (hereinafter referred to as “mounting surface 26”). 14.

The light emitting element 12 is disposed in a recess 27 formed by the mounting surface 26 of the silicon substrate 11 and the reflecting surface 25 of the metal plate 13. Further, the light emitting element 12 is disposed on the metal wiring 15A in the recess 27, and is electrically connected to the metal wiring 15A through a die bond, and is electrically connected to the metal wiring 15B in the recess 27 by the gold wire 16. ing. The light emitting element 12 is sealed with the sealing resin 14 filled in the recess 27 in which the light emitting element 12 is disposed.
Then, the mounting surface 26 of the silicon substrate 11, the angle between the reflecting surface 25 of the metal plate 13 theta, a refractive index n _c of the sealing resin _14, and the refractive index of air and n _a, theta is theta < More preferably, the relationship of (90 ° + arcsin (n _a / n _c )) / 2 is satisfied, and θ satisfies the relationship of 40 ° ≦ θ <(90 ° + arcsin (n _a / n _c )) / 2. , Θ is most preferably 45 ° or more and 60 ° or less.
If θ satisfies the relationship θ <(90 ° + arcsin (n _a / n _c )) / 2, the reflecting surface 25 of the metal plate 13 reflects the light emitted from the light emitting element 12 and reflects this light. It can be efficiently emitted to the outside of the sealing resin 14. If the angle θ is 45 ° or more and 60 ° or less, the light emitted from the light emitting element 12 can be emitted most efficiently to the outside of the sealing resin 14.

A through-hole 21 is formed in the silicon substrate 11 so as to penetrate in the thickness direction. Insulating films 17 that are continuous from both surfaces of the silicon substrate 11 to the inner surface of the through hole 21 are provided on both surfaces of the silicon substrate 11 and the inner surface of the through hole 21.
A metal wiring 15 is formed on one surface 11 a of the silicon substrate 11 via an insulating film 17, and a metal wiring 28 is formed on the other surface 11 b of the silicon substrate 11 via an insulating film 17. Further, the through hole 21 penetrates the silicon substrate 11 in the thickness direction through the insulating film 17, and is formed on the metal wiring 15 formed on one surface 11a of the silicon substrate 11 and on the other surface 11b. A through wiring 22 that electrically connects the metal wiring 28 is provided.

Further, the through hole 21 is filled with a through hole sealing resin 20 in order to fill a gap in the center line portion of the through wiring 22.
The metal wiring 28 formed on the other surface 11 b side of the silicon substrate 11 is covered with the insulating resin 19 except for the joint portions 29 for providing the solder bumps 23.

 The metal plate 13 has a metal oxide film 18 on a surface (hereinafter referred to as a “joint surface”) 13a to be joined to the silicon substrate 11, a surface 13b opposite to the joint surface 13a, and a reflective surface 25. Is formed.

As the silicon substrate 11, a silicon single crystal substrate used in a wafer process is used.
As the light emitting element 12, for example, a gallium nitride (GaN) light emitting diode is used.

The metal plate 13 is made of a metal such as aluminum (Al), nickel (Ni), silver (Ag), tin (Sn), platinum (Pt), palladium (Pd) having a high reflectance with respect to visible light. Things are used.
As the sealing resin 14, a thermosetting transparent resin is used, and examples of such a transparent resin include a silicone resin and an epoxy resin. The sealing resin 14 may be added with a fluorescent material such as a pigment or a phosphor that emits light by absorbing at least a part of the light emitted from the light emitting element 12.

 As the metal forming the metal wiring 15, aluminum (Al), nickel (Ni), silver (Ag), tin (Sn), platinum having resistance to acids and alkalis and having high reflectivity to visible light What consists of metals, such as (Pt) and palladium (Pd), is used. When the reflectance of the metal wiring 15 is high, light leaking from the light emitting element 12 to the silicon substrate 11 is reflected by the metal wiring 15, and the luminance of the light emitting device 10 can be increased.

Examples of the insulating film 17 include a film made of silicon dioxide (SiO ₂ ) formed on the surface of the silicon substrate 11 by thermal oxidation.
As the metal oxide film 18, a metal oxide such as silicon dioxide (SiO ₂ ), titanium dioxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ) or the like formed on the surface of the metal plate 13 by a plasma CVD method or the like. A film made of one selected from the group can be mentioned. By providing the metal oxide film 18 on the surface of the metal plate 13, the metal plate 13 has improved resistance to acids and alkalis used in the wafer process. Among the metal oxides forming the metal oxide film 18, silicon dioxide (SiO ₂ ) is preferable because of its excellent affinity with the wafer process.

As the insulating resin 19, a general solder resist is used. By covering the portion of the metal wiring 28 excluding the joint portion 29 with the insulating resin 19, the solder bump 23 is not attached to the portion other than the joint portion 29.
As the through hole sealing resin 20, a method of forming a resin layer in the through hole 21 by forming a solder resist in a vacuum chamber and then releasing to the atmosphere is used. The through-hole sealing resin 20 is formed for the purpose of preventing the strength from being lowered when a void exists in the center line portion of the through-wire 22 after the through-wire 22 is formed in the through-hole 21. Are filled in the voids.

As the adhesive 24, a photosensitive resin is used, and is removed by exposure and development according to the opening of the substrate on which the reflective layer is formed.
The metal forming the metal wiring 28 does not require a high reflectivity, and therefore, copper that can be easily plated in the through hole 21 is used.

The light emitting device 10 of this embodiment, the mounting surface 26 of the silicon substrate 11, when the angle between the reflecting surface 25 of the metal plate 13 and theta, the angle theta is the refractive index of the sealing resin 14 n _c, When the refractive index of air and _{n a, θ <(90 °} + arcsin (n a / n c)) is satisfied for / 2 relationship, effectively outside of the sealing resin 14 with light emitted from the light emitting element 12 Can be emitted. Further, since the silicon substrate 11 with high heat dissipation is used as the substrate on which the metal wiring 15 for mounting the light emitting element 12 is provided, the temperature rise of the light emitting element due to light emission, which is a problem particularly in a gallium nitride-based light emitting element. Can be suppressed.

Next, with reference to FIGS. 1-3, the manufacturing method of the light-emitting device of this embodiment is demonstrated.
The silicon substrate 11 is thermally oxidized to form an insulating film 17 made of silicon dioxide on one surface 11 a of the silicon substrate 11.
Next, as shown in FIG. 2, a large number of metal wirings 15 are formed on the insulating film 17 of the silicon substrate 11 at a predetermined arrangement and at equal intervals. Note that the metal wiring 15 corresponds to one light emitting element 12 mounted on the silicon substrate 11, and the metal wiring 15 </ b> A and the metal wiring 15 </ b> B arranged so as to face each other with a gap form one block. Yes. The metal wiring 15 can be formed by plating, vacuum deposition, a method of bonding a copper foil processed into a desired pattern to the insulating film 17 of the silicon substrate 11, a copper paste or the like on the insulating film 17 of the silicon substrate 11. A method of printing a silver paste and heat-curing it is used.
Next, a part of the metal wiring 15 is exposed from the other surface 11b of the silicon substrate 11 by dry etching such as reactive ion etching (RIE) so as to be exposed from the other surface 11b of the silicon substrate 11. A through hole 21 reaching the metal wiring 15 is formed.

In addition to the steps described above, the metal plate 13 is provided with reflecting surfaces 25 having a predetermined angle θ as shown in FIG. A large number of through holes 30 penetrating in the thickness direction of 13 are formed. Alternatively, the metal plate 13 in which a large number of through holes 30 having the reflecting surface 25 having a predetermined angle θ as shown in FIG.
3 is formed between the mounting surface 26 of the silicon substrate 11 and the reflection surface 25 of the metal plate 13 described above. The angle θ between the reflection surface 25 of the metal plate 13 and the bonding surface 13a of the metal plate 13 illustrated in FIG. It is the same as the angle θ.
Next, a metal oxide film 18 is formed on the surface of the metal plate 13 by plasma CVD or the like.

Next, the bonding surface 13 a of the metal plate 13 and one surface 11 a of the silicon substrate 11 on which the metal wiring 15 is formed are bonded by the adhesive 24.
At this time, the portion of the metal wiring 15 on which the light emitting element 12 is mounted is arranged in the center of the through hole 30 of the metal plate 13, and the through hole 30 of the metal plate 13 and the metal wiring 15 of the silicon substrate 11 are arranged. To the maximum number of combinations.

Next, the silicon substrate 11 integrated with the metal plate 13 is polished so as to have a predetermined thickness. At this time, the silicon substrate 11 is polished from the other surface 11b side.
When polishing the silicon substrate 11, the metal plate 11 serves as a support for the silicon substrate 11 and serves as a means for preventing chipping and cracking of the silicon substrate 11.

After the polishing of the silicon substrate 11, the insulating film 17 made of silicon dioxide or the like is formed on the other surface 11b of the silicon substrate 11 and the inner surface of the through hole 21 by plasma CVD.
Next, the insulating film formed on the surface of the metal wiring 15 in the through hole 21 is removed by etching, and a part of the metal wiring 15 is exposed in the through hole 21.

Next, the metal wiring 28 is formed on the other surface 11 b of the silicon substrate 11 by plating or the like, and the through wiring 22 is formed in the through hole 21.
After the through wiring 22 is formed, if there is a gap in the center line portion of the through wiring 22, the through hole sealing resin 20 is filled into the gap of the through wiring 22.
Next, a portion of the metal wiring 28 excluding the joint portion 29 is covered with an insulating resin 19 such as a general solder resist.
Next, solder bumps 23 are formed on the joints 29 of the metal wiring 28.

Next, the light emitting element 12 is mounted in a recess 27 formed by the mounting surface 26 of the silicon substrate 11 and the reflecting surface 25 of the metal plate 13. At this time, the light emitting element 12 is fixed on the metal wiring 15A formed on the mounting surface 26 of the silicon substrate 11 by die bonding, and the electrode of the light emitting element 12 and the metal wiring 15B are electrically bonded by wire bonding with the gold wire 16. Connect.
Next, after the sealing resin 14 is filled into the recess 27 in which the light emitting element 12 is mounted, the sealing resin 14 is cured.
Finally, a structure composed of the silicon substrate 11, the metal plate 13, the light emitting element 12, the sealing resin 14, and the like is cut out to a predetermined size and shape to obtain the light emitting device 10 having the structure shown in FIG.

 According to the method for manufacturing a light emitting device of this embodiment, the silicon substrate 11 on which a large number of metal wirings 15 are formed by a wafer process and the metal plate 13 on which a large number of through holes 30 having reflection surfaces 25 are formed are bonded. Since the light emitting element 12 is mounted in the recess 27 formed by the mounting surface 26 of the silicon substrate 11 and the reflecting surface 25 of the metal plate 13, a large number of light emitting devices 10 can be manufactured in a lump. Therefore, for example, when an 8-inch wafer is used as the silicon substrate 11, about 1000 to 10,000 (block) metal wirings 15 are collectively formed depending on the size of the metal wiring 15. By mounting the light emitting elements 12 on the wiring 15, about 1000 to 10,000 light emitting devices 10 can be manufactured from one wafer. Therefore, according to the manufacturing method of the light emitting device of this embodiment, the manufacturing cost of the light emitting device can be reduced.

In addition, by forming the metal oxide film 18 on the reflection surface 25 of the metal plate 13, the silicon substrate 11 and the metal plate 13 are joined, and then subjected to a semiconductor process using an acid or alkali solution. Since the metal plate 13 is not attacked by the acid or alkali solution, 1000 or more light emitting devices 10 can be manufactured on one wafer. Therefore, according to the manufacturing method of the light emitting device of this embodiment, the manufacturing cost of the light emitting device can be reduced.
Further, when the silicon substrate 11 integrated with the metal plate 13 is polished so as to have a predetermined thickness, the metal plate 11 serves as a support for the silicon substrate 11, so that the silicon substrate 11 is not chipped or cracked. Therefore, the yield can be improved.
Furthermore, 1000 or more light emitting elements 12 can be mounted on the silicon substrate 11 in one step, and the metal wiring 28 electrically connected to the metal wiring 15 through the through wiring 22 is connected to the other surface 11b of the silicon substrate 11. Therefore, after the light emitting element 12 is mounted, the light emitting device 10 can be cut out in an arbitrary number, so that the mounting cost can be reduced. Further, since the light emitting device 10 can be cut into an arbitrary shape when the light emitting device 10 is cut out, a light emitting device having a desired size can be obtained.

(2) Second Embodiment FIG. 4 is a schematic sectional view showing a second embodiment of the light emitting device of the present invention.
In FIG. 4, the same components as those of the light emitting device 10 shown in FIG.
The light emitting device 40 of this embodiment is different from the above light emitting device 10 in that only the through wiring 22 is formed in the through hole 21.

BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows 1st embodiment of the light-emitting device of this invention, (a) is a top view, (b) is the figure which expanded the area | region shown by X of (a), (c) is (b). It is sectional drawing which follows the AA line. It is the schematic which shows one Embodiment of the manufacturing method of the light-emitting device of this invention, (a) is a top view, (b) is the figure which expanded the area | region shown by Y of (a). It is the schematic which shows one Embodiment of the manufacturing method of the light-emitting device of this invention, (a) is a top view, (b) is the figure which expanded the area | region shown by Z of (a). It is a schematic sectional drawing which shows 2nd embodiment of the light-emitting device of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10,40 ... Light-emitting device, 11 ... Silicon substrate, 12 ... Light emitting element, 13 ... Metal plate, 14 ... Sealing resin, 15 ... Metal wiring, 16 ... Gold Wire, 17 ... Insulating film, 18 ... Metal oxide film, 19 ... Insulating resin, 20 ... Through hole sealing resin, 21 ... Through hole, 22 ... Through wiring, 23 ... ··· Solder bumps, 24 ... adhesive, 25 ... reflective surface, 26 ... mounting surface, 27 ... recess, 28 ... metal wiring, 29 ... joint, 30 ... Through hole.

Claims (6)

A silicon substrate on which metal wiring is formed, a light-emitting element mounted on the silicon substrate, and is disposed on the silicon substrate, surrounds the light-emitting element, and gradually increases in width from the surface on which the light-emitting element is mounted. A light emitting device comprising a metal plate having a reflective surface inclined outward and a sealing resin for sealing the light emitting element,
And the surface of the light emitting element side of the silicon substrate, the angle between the reflecting surface theta, a refractive index n _c of the sealing _resin, and the refractive index of air and n _a, wherein theta is theta <(90 _{° + arcsin (n a / n} c)) / 2 of meet the relationship,
A through wiring that penetrates the silicon substrate in the thickness direction and connects the metal wiring formed on the front surface and the back surface of the silicon substrate is provided,
A light emitting device, wherein a through hole sealing resin is filled in a gap in a center line portion of the through wiring . 2. The light emitting device according to claim 1, wherein the θ satisfies a relationship of 40 ° ≦ θ <(90 ° + arcsin (n _a / n _c )) / 2.  3. The light emitting device according to claim 1, wherein the metal wiring and / or the metal plate is one selected from the group consisting of aluminum, nickel, silver, tin, platinum, and palladium.  4. The light emitting device according to claim 1, wherein a metal oxide film made of one selected from the group consisting of silicon dioxide, titanium dioxide, and aluminum oxide is formed on the reflecting surface. 5. . A silicon substrate on which metal wiring is formed, a light emitting element mounted on the silicon substrate, and a surface that is bonded to the silicon substrate and is inclined outward so that the width gradually increases from the surface on which the light emitting element is mounted. A method of manufacturing a light emitting device comprising a metal plate on which a reflecting surface is formed and a sealing resin for sealing the light emitting element,
Forming a plurality of metal wirings on one surface of the silicon substrate by a wafer process; forming a through hole from the other surface of the silicon substrate to the metal wiring; and reflecting the surface on the metal plate. A step of forming a plurality of through-holes, and a step of bonding the silicon substrate and the metal plate such that a portion of the metal wiring on which the light-emitting element is mounted is disposed at a central portion of the through-hole. Forming a metal wiring on the other surface of the silicon substrate, forming a through wiring in the through hole formed in the silicon substrate, and sealing the through hole in the gap in the central line portion of the through wiring And a step of filling a resin . 6. The method for manufacturing a light emitting device according to claim 5 , further comprising a step of polishing the silicon substrate using the metal plate as a support after the step of bonding the silicon substrate and the metal plate.

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