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JP4846549B2 - Semiconductor integrated circuit and electronic equipment - Google Patents
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JP4846549B2 - Semiconductor integrated circuit and electronic equipment - Google Patents

Semiconductor integrated circuit and electronic equipment Download PDF

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JP4846549B2
JP4846549B2 JP2006333071A JP2006333071A JP4846549B2 JP 4846549 B2 JP4846549 B2 JP 4846549B2 JP 2006333071 A JP2006333071 A JP 2006333071A JP 2006333071 A JP2006333071 A JP 2006333071A JP 4846549 B2 JP4846549 B2 JP 4846549B2
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circuit
reference current
semiconductor integrated
image
analog signal
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JP2008147025A (en
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邦裕 小宮
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Rohm Co Ltd
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Description

本発明は、半導体集積回路および電子機器に関し、特に、アナログ信号に基づいて負荷に電流を供給する半導体集積回路および電子機器に関する。   The present invention relates to a semiconductor integrated circuit and an electronic device, and more particularly to a semiconductor integrated circuit and an electronic device that supply current to a load based on an analog signal.

テレビジョン装置等のディスプレイに表示される画像の明るさは、画像の種類、たとえば室内の画像および屋外の画像で異なる。ここで、視聴者の目の疲労を防ぎ、かつ消費電力を低減するために、画像自体の明るさに応じてディスプレイのバックライトの照度を変更する照明装置が開発されている。このような照明装置は、ディスプレイに光を照射するLED(Light Emitting Diode)に電流を供給する駆動IC(Integrated Circuit)を備える(たとえば、特許文献1および2参照)。
特開2002−319707号公報 特開平9−232635号公報
The brightness of an image displayed on a display such as a television apparatus differs depending on the type of image, for example, an indoor image and an outdoor image. Here, in order to prevent the viewer's eyes from fatigue and reduce power consumption, an illuminating device that changes the illuminance of the backlight of the display according to the brightness of the image itself has been developed. Such an illuminating device includes a driving IC (Integrated Circuit) that supplies current to an LED (Light Emitting Diode) that irradiates light to the display (see, for example, Patent Documents 1 and 2).
JP 2002-319707 A Japanese Patent Laid-Open No. 9-232635

ところで、このような照明装置において、画像の明るさの解析はたとえばCPU(Central Processing Unit)で行なわれ、解析結果はデジタル信号として得られることが一般的である。   By the way, in such an illuminating device, the analysis of the brightness of an image is generally performed by a CPU (Central Processing Unit), for example, and the analysis result is generally obtained as a digital signal.

ここで、一般的に動画像の明るさは単位時間当たりの変化量が大きいことから、デジタル信号に基づいてバックライトの照度を変更する方式では、駆動ICがデジタル信号をデコードしてLEDへの供給電流の電流値を変更するまでにタイムラグが生じ、画像の明るさの変化に追随することは困難である。また、駆動ICの供給電流の変化がデジタル的すなわち階段状になるため、画面のちらつきが大きくなり、見にくい画面となってしまう。   Here, since the brightness of a moving image generally has a large amount of change per unit time, in the method of changing the illuminance of the backlight based on the digital signal, the driving IC decodes the digital signal and outputs it to the LED. A time lag occurs before the current value of the supply current is changed, and it is difficult to follow the change in the brightness of the image. In addition, since the change in the supply current of the driving IC is digital, that is, in a staircase pattern, the flickering of the screen increases and the screen becomes difficult to see.

それゆえに、本発明の目的は、負荷に供給する電流をアナログ信号の変化に応じて迅速かつリニアに調整することが可能な半導体集積回路および電子機器を提供することである。   SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor integrated circuit and an electronic apparatus capable of adjusting a current supplied to a load quickly and linearly according to a change in an analog signal.

上記課題を解決するために、本発明のある局面に係わる半導体集積回路は、外部から受けたアナログ信号に基づいて基準電流を生成する基準電流源回路と、外部から受けたデータに基づいて増幅率を決定し、基準電流源回路から受けた基準電流を決定した増幅率で増幅し、増幅後の電流を負荷へ出力する可変増幅回路とを備える。   In order to solve the above problems, a semiconductor integrated circuit according to an aspect of the present invention includes a reference current source circuit that generates a reference current based on an analog signal received from the outside, and an amplification factor based on data received from the outside. And a variable amplifier circuit that amplifies the reference current received from the reference current source circuit with the determined amplification factor and outputs the amplified current to the load.

好ましくは、半導体集積回路の外部には画像を表示する表示部が配置され、負荷は表示部に光を照射する発光素子であり、アナログ信号は、画像の明るさに応じて振幅が変化するアナログ信号であり、データは、周囲光の光量に応じて値が変化するデータである。   Preferably, a display unit for displaying an image is arranged outside the semiconductor integrated circuit, the load is a light emitting element that irradiates light to the display unit, and the analog signal is an analog whose amplitude changes according to the brightness of the image. It is a signal, and data is data whose value changes according to the amount of ambient light.

好ましくは、可変増幅回路は、カレントミラー回路であり、外部から受けたデータに基づいてミラー比を変更する。   Preferably, the variable amplifier circuit is a current mirror circuit, and changes the mirror ratio based on data received from the outside.

好ましくは、負荷はLEDである。
上記課題を解決するために、本発明のある局面に係わる電子機器は、画像を表示する表示部と、表示部に光を照射する発光素子と、アナログ信号を生成し、画像の明るさに応じてアナログ信号の振幅を変化させる画像解析回路と、外部から光を受光し、受光量を表わすデータを生成する光検出回路と、アナログ信号に基づいて基準電流を生成する基準電流源回路と、データに基づいて増幅率を決定し、基準電流源回路から受けた基準電流を決定した増幅率で増幅し、増幅後の電流を発光素子へ出力する可変増幅回路とを備える。
Preferably, the load is an LED.
In order to solve the above problems, an electronic device according to an aspect of the present invention includes a display portion that displays an image, a light-emitting element that irradiates light to the display portion, an analog signal, and the brightness of the image. An image analysis circuit that changes the amplitude of the analog signal, a light detection circuit that receives light from the outside and generates data representing the amount of received light, a reference current source circuit that generates a reference current based on the analog signal, and data And a variable amplification circuit that amplifies the reference current received from the reference current source circuit with the determined amplification factor and outputs the amplified current to the light emitting element.

本発明によれば、負荷に供給する電流をアナログ信号の変化に応じて迅速かつリニアに調整することができる。   According to the present invention, the current supplied to the load can be quickly and linearly adjusted according to the change of the analog signal.

以下、本発明の実施の形態について図面を用いて説明する。なお、図中同一または相当部分には同一符号を付してその説明は繰り返さない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

<第1の実施の形態>
図1は、本発明の第1の実施の形態に係る半導体集積回路の構成を示す図である。
<First Embodiment>
FIG. 1 is a diagram showing a configuration of a semiconductor integrated circuit according to the first embodiment of the present invention.

図1を参照して、半導体集積回路101は、基準電流源回路1と、可変増幅回路2と、端子T1〜T3とを備える。基準電流源回路1は、オペアンプ11および12と、抵抗R1〜R5と、NチャネルMOS(Metal Oxide Semiconductor)トランジスタTR1とを含む。   Referring to FIG. 1, a semiconductor integrated circuit 101 includes a reference current source circuit 1, a variable amplifier circuit 2, and terminals T1 to T3. Reference current source circuit 1 includes operational amplifiers 11 and 12, resistors R1 to R5, and an N-channel MOS (Metal Oxide Semiconductor) transistor TR1.

基準電流源回路1は、コンデンサC1および端子T1を介して受けた外部からのアナログ信号SXに基づいて基準電流IREFを生成する。外部からのアナログ信号SXは、コンデンサC1によって直流成分が除去される。   The reference current source circuit 1 generates a reference current IREF based on an external analog signal SX received via the capacitor C1 and the terminal T1. A DC component is removed from the external analog signal SX by the capacitor C1.

オペアンプ11の出力電圧をVINとし、抵抗R3〜R5の抵抗値をそれぞれR3〜R5とし、オペアンプ11および12の非反転入力端子に供給されるバイアス電圧VBの電圧値をVBとすると、基準電流IREFは以下の式で表わされる。   When the output voltage of the operational amplifier 11 is VIN, the resistance values of the resistors R3 to R5 are R3 to R5, respectively, and the voltage value of the bias voltage VB supplied to the non-inverting input terminals of the operational amplifiers 11 and 12 is VB, the reference current IREF Is represented by the following equation.

IREF=VB/R4−(R5×R3×VB+R4×R5×VIN)/(R4×(R4×R5+R4×R3+R5×R3))
可変増幅回路2は、端子T2を介して外部から受けたデータDXに基づいて増幅率を決定し、基準電流源回路1から受けた基準電流IREFを決定した増幅率で増幅し、増幅後の電流を供給電流IDとして負荷であるLED3へ出力する。なお、負荷はLEDに限らず、他の発光素子であってもよい。
IREF = VB / R4− (R5 × R3 × VB + R4 × R5 × VIN) / (R4 × (R4 × R5 + R4 × R3 + R5 × R3))
The variable amplifier circuit 2 determines an amplification factor based on data DX received from the outside via the terminal T2, amplifies the reference current IREF received from the reference current source circuit 1 with the determined amplification factor, and an amplified current Is supplied to the LED 3 as a load as a supply current ID. The load is not limited to the LED, but may be another light emitting element.

図2は、本発明の第1の実施の形態に係る半導体集積回路における可変増幅回路2の構成を示す図である。   FIG. 2 is a diagram showing a configuration of the variable amplifier circuit 2 in the semiconductor integrated circuit according to the first embodiment of the present invention.

図2を参照して、可変増幅回路2は、NチャネルMOSトランジスタTR11と、n(nは2以上の自然数)個のNチャネルMOSトランジスタと、(n−1)個のスイッチとを含む。図2では、n個のNチャネルMOSトランジスタのうち、NチャネルMOSトランジスタTR21〜TR23を代表的に示す。また、図2では、(n−1)個のスイッチのうち、スイッチSW1およびSW2を代表的に示す。   Referring to FIG. 2, variable amplifier circuit 2 includes an N channel MOS transistor TR11, n (n is a natural number of 2 or more) N channel MOS transistors, and (n-1) switches. FIG. 2 representatively shows N channel MOS transistors TR21 to TR23 among n N channel MOS transistors. FIG. 2 representatively shows the switches SW1 and SW2 among the (n−1) switches.

可変増幅回路2はカレントミラー回路であり、外部から受けたデータDXに基づいてミラー比を変更する。   The variable amplifier circuit 2 is a current mirror circuit, and changes the mirror ratio based on data DX received from the outside.

NチャネルMOSトランジスタTR11は、ドレインが基準電流源回路1の出力に接続される。すなわち、基準電流源回路1から受けた基準電流IREFがNチャネルMOSトランジスタTR11のドレイン電流となる。   N channel MOS transistor TR11 has a drain connected to the output of reference current source circuit 1. That is, the reference current IREF received from the reference current source circuit 1 becomes the drain current of the N-channel MOS transistor TR11.

NチャネルMOSトランジスタTR21〜TR23を含むn個のNチャネルMOSトランジスタは、NチャネルMOSトランジスタTR11とカレントミラー回路を構成する。すなわち、n個の各NチャネルMOSトランジスタは、基準電流源回路1から受けた基準電流IREFとほぼ同じ電流値の電流をそれぞれ出力する。   N N-channel MOS transistors including N-channel MOS transistors TR21 to TR23 constitute a current mirror circuit with N-channel MOS transistor TR11. That is, each of the n N-channel MOS transistors outputs a current having substantially the same current value as the reference current IREF received from the reference current source circuit 1.

スイッチSW1およびSW2を含む(n−1)個のスイッチは、データDXに基づいて、n個のNチャネルMOSトランジスタのうち、NチャネルMOSトランジスタTR21以外のNチャネルMOSトランジスタのベースと基準電流源回路1の出力との接続および非接続をそれぞれ切り替える。データDXは、たとえば、(n−1)ビットのデータ幅を有し、(n−1)ビットのデータと(n−1)個のスイッチとが1対1で対応している。   Based on the data DX, the (n−1) switches including the switches SW1 and SW2 are the bases of the N channel MOS transistors other than the N channel MOS transistor TR21 and the reference current source circuit among the n N channel MOS transistors. The connection and disconnection with the output of 1 are switched respectively. The data DX has, for example, a data width of (n-1) bits, and (n-1) bits of data and (n-1) switches have a one-to-one correspondence.

すなわち、可変増幅回路2は、外部から受けたデータDXに基づいて基準電流IREFの1倍〜n倍の供給電流IDをLED3へ出力する。   That is, the variable amplifier circuit 2 outputs a supply current ID that is 1 to n times the reference current IREF to the LED 3 based on the data DX received from the outside.

ところで、デジタル信号に基づいてバックライトの照度を変更する方式では、駆動ICがデジタル信号をデコードしてLEDへの供給電流の電流値を変更するまでにタイムラグが生じ、画像の明るさの変化に追随することは困難である。また、駆動ICの供給電流の変化がデジタル的すなわち階段状になるため、画面のちらつきが大きくなり、見にくい画面となってしまう。しかしながら、本発明の第1の実施の形態に係る半導体集積回路では、基準電流源回路1が、外部から受けたアナログ信号SXに基づいて基準電流IREFの電流値を変更する。そして、可変増幅回路2が、基準電流源回路から受けた基準電流を増幅して負荷へ出力する。したがって、本発明の第1の実施の形態に係る半導体集積回路では、たとえば画像の明るさに応じて変化するアナログ信号に応じて、負荷に供給する電流を迅速かつリニアに調整することができる。   By the way, in the method of changing the illuminance of the backlight based on the digital signal, there is a time lag until the drive IC changes the current value of the current supplied to the LED by decoding the digital signal, resulting in a change in the brightness of the image. It is difficult to follow. In addition, since the change in the supply current of the driving IC is digital, that is, in a staircase pattern, the flickering of the screen increases and the screen becomes difficult to see. However, in the semiconductor integrated circuit according to the first embodiment of the present invention, the reference current source circuit 1 changes the current value of the reference current IREF based on the analog signal SX received from the outside. Then, the variable amplifier circuit 2 amplifies the reference current received from the reference current source circuit and outputs it to the load. Therefore, in the semiconductor integrated circuit according to the first embodiment of the present invention, the current supplied to the load can be quickly and linearly adjusted, for example, according to an analog signal that changes according to the brightness of the image.

次に、本発明の他の実施の形態について図面を用いて説明する。なお、図中同一または相当部分には同一符号を付してその説明は繰り返さない。   Next, another embodiment of the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and description thereof will not be repeated.

<第2の実施の形態>
本実施の形態は、第1の実施の形態に係る半導体集積回路を備える電子機器に関する。以下で説明する内容以外は第1の実施の形態に係る半導体集積回路と同様である。
<Second Embodiment>
The present embodiment relates to an electronic apparatus including the semiconductor integrated circuit according to the first embodiment. The contents other than those described below are the same as those of the semiconductor integrated circuit according to the first embodiment.

図3は、本発明の第2の実施の形態に係る電子機器の構成を示す図である。
図3を参照して、電子機器201は、たとえば携帯電話であり、半導体集積回路101と、画像解析回路51と、フィルタ52と、DA(Digital to Analog)コンバータ53と、光検出回路54と、ディスプレイ(表示部)55と、コンデンサC1と、LED3とを備える。
FIG. 3 is a diagram showing a configuration of an electronic apparatus according to the second embodiment of the present invention.
Referring to FIG. 3, an electronic device 201 is, for example, a mobile phone, and includes a semiconductor integrated circuit 101, an image analysis circuit 51, a filter 52, a DA (Digital to Analog) converter 53, a photodetection circuit 54, A display (display unit) 55, a capacitor C1, and an LED 3 are provided.

ディスプレイ55は、たとえばLCD(Liquid Crystal Display)であり、静止画像および動画像を表示する。   The display 55 is an LCD (Liquid Crystal Display), for example, and displays a still image and a moving image.

画像解析回路51は、ディスプレイ55に表示された画像の明るさに応じた値を有するデジタル信号を生成し、生成したデジタル信号をフィルタ52へ出力する。たとえば、画像解析回路51は、画像における複数個の画素の明るさの最大値、画像における複数個の画素の明るさの平均値、画像における各々が重み付けされた複数個の画素の明るさの平均値、および画像における複数個の画素の明るさの度数分布において最も度数の大きい画素の明るさ等を画像の明るさとして算出する。   The image analysis circuit 51 generates a digital signal having a value corresponding to the brightness of the image displayed on the display 55, and outputs the generated digital signal to the filter 52. For example, the image analysis circuit 51 calculates the maximum value of the brightness of a plurality of pixels in the image, the average value of the brightness of the plurality of pixels in the image, and the average of the brightness of the plurality of pixels each weighted in the image. The brightness of the pixel having the highest frequency in the frequency distribution of the brightness of the plurality of pixels in the image and the like are calculated as the brightness of the image.

フィルタ52は、画像解析回路51から受けたデジタル信号に所定のフィルタ処理を行ない、フィルタ処理後のデジタル信号をDAコンバータ53へ出力する。   The filter 52 performs a predetermined filter process on the digital signal received from the image analysis circuit 51 and outputs the digital signal after the filter process to the DA converter 53.

DAコンバータ53は、フィルタ52から受けたデジタル信号をアナログ信号SXに変換し、コンデンサC1を介して半導体集積回路101へ出力する。   The DA converter 53 converts the digital signal received from the filter 52 into an analog signal SX and outputs the analog signal SX to the semiconductor integrated circuit 101 via the capacitor C1.

したがって、半導体集積回路101が受けるアナログ信号SXは、画像の明るさに応じて振幅が変化するアナログ信号となる。   Therefore, the analog signal SX received by the semiconductor integrated circuit 101 is an analog signal whose amplitude changes according to the brightness of the image.

光検出回路54は、外部から光を受光し、受光量を表わすデータDXを生成して半導体集積回路101における可変増幅回路2へ出力する。   The photodetection circuit 54 receives light from the outside, generates data DX representing the amount of received light, and outputs the data DX to the variable amplifier circuit 2 in the semiconductor integrated circuit 101.

ここで、動画像の明るさは周囲光と比べて単位時間当たりの変化量が大きい。そこで、本発明の第2の実施の形態に係る電子機器では、可変増幅回路2が、電子機器の周囲光に対応するデータDXに基づいてミラー比を変更し、かつ、基準電流源回路1が、ディスプレイ55の表示する画像の明るさに対応するアナログ信号SXに基づいて基準電流IREFの電流値を迅速かつリニアに変更する。このような構成により、ディスプレイ55への照射光の光量を周囲光の光量および画像の明るさに応じて適切に調整することができ、従来技術と比べてさらに、電子機器を使用するユーザの目の疲労を防ぎ、かつ消費電力を低減することができる。   Here, the brightness of a moving image has a larger amount of change per unit time than ambient light. Therefore, in the electronic device according to the second embodiment of the present invention, the variable amplifier circuit 2 changes the mirror ratio based on the data DX corresponding to the ambient light of the electronic device, and the reference current source circuit 1 Based on the analog signal SX corresponding to the brightness of the image displayed on the display 55, the current value of the reference current IREF is changed quickly and linearly. With such a configuration, the amount of light applied to the display 55 can be appropriately adjusted according to the amount of ambient light and the brightness of the image. Can be prevented and power consumption can be reduced.

今回開示された実施の形態はすべての点で例示であって制限的なものではないと考えられるべきである。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更が含まれることが意図される。   The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

本発明の第1の実施の形態に係る半導体集積回路の構成を示す図である。1 is a diagram showing a configuration of a semiconductor integrated circuit according to a first embodiment of the present invention. 本発明の第1の実施の形態に係る半導体集積回路における可変増幅回路2の構成を示す図である。1 is a diagram showing a configuration of a variable amplifier circuit 2 in a semiconductor integrated circuit according to a first embodiment of the present invention. 本発明の第2の実施の形態に係る電子機器の構成を示す図である。It is a figure which shows the structure of the electronic device which concerns on the 2nd Embodiment of this invention.

符号の説明Explanation of symbols

1 基準電流源回路、2 可変増幅回路、3 LED、11,12 オペアンプ、51 画像解析回路、52 フィルタ、53 DAコンバータ、54 光検出回路、55 ディスプレイ(表示部)、101 半導体集積回路、201 電子機器、C1 コンデンサ、R1〜R5 抵抗、TR1,TR11 NチャネルMOSトランジスタ、T1〜T3 端子。   DESCRIPTION OF SYMBOLS 1 Reference current source circuit, 2 Variable amplifier circuit, 3 LED, 11, 12 operational amplifier, 51 Image analysis circuit, 52 Filter, 53 DA converter, 54 Photodetection circuit, 55 Display (display part), 101 Semiconductor integrated circuit, 201 Electronics Equipment, C1 capacitor, R1-R5 resistors, TR1, TR11 N-channel MOS transistors, T1-T3 terminals.

Claims (5)

外部から受けたアナログ信号に基づいて基準電流を生成する基準電流源回路と、
外部から受けたデータに基づいて増幅率を決定し、前記基準電流源回路から受けた基準電流を前記決定した増幅率で増幅し、前記増幅後の電流を負荷へ出力する可変増幅回路とを備える半導体集積回路。
A reference current source circuit that generates a reference current based on an analog signal received from the outside;
A variable amplification circuit that determines an amplification factor based on data received from outside, amplifies the reference current received from the reference current source circuit at the determined amplification factor, and outputs the amplified current to a load; Semiconductor integrated circuit.
前記半導体集積回路の外部には画像を表示する表示部が配置され、
前記負荷は前記表示部に光を照射する発光素子であり、
前記アナログ信号は、前記画像の明るさに応じて振幅が変化するアナログ信号であり、
前記データは、周囲光の光量に応じて値が変化するデータである請求項1記載の半導体集積回路。
A display unit for displaying an image is disposed outside the semiconductor integrated circuit,
The load is a light emitting element that emits light to the display unit,
The analog signal is an analog signal whose amplitude changes according to the brightness of the image,
The semiconductor integrated circuit according to claim 1, wherein the data is data whose value changes according to the amount of ambient light.
前記可変増幅回路は、カレントミラー回路であり、前記外部から受けたデータに基づいてミラー比を変更する請求項1記載の半導体集積回路。   The semiconductor integrated circuit according to claim 1, wherein the variable amplifier circuit is a current mirror circuit, and changes a mirror ratio based on data received from the outside. 前記負荷はLEDである請求項1記載の半導体集積回路。   The semiconductor integrated circuit according to claim 1, wherein the load is an LED. 画像を表示する表示部と、
前記表示部に光を照射する発光素子と、
アナログ信号を生成し、前記画像の明るさに応じて前記アナログ信号の振幅を変化させる画像解析回路と、
外部から光を受光し、前記受光量を表わすデータを生成する光検出回路と、
前記アナログ信号に基づいて基準電流を生成する基準電流源回路と、
前記データに基づいて増幅率を決定し、前記基準電流源回路から受けた基準電流を前記決定した増幅率で増幅し、前記増幅後の電流を前記発光素子へ出力する可変増幅回路とを備える電子機器。
A display for displaying an image;
A light emitting element for irradiating the display with light;
An image analysis circuit that generates an analog signal and changes the amplitude of the analog signal according to the brightness of the image;
A light detection circuit that receives light from outside and generates data representing the amount of received light;
A reference current source circuit for generating a reference current based on the analog signal;
An electronic device comprising: a variable amplification circuit that determines an amplification factor based on the data, amplifies a reference current received from the reference current source circuit with the determined amplification factor, and outputs the amplified current to the light emitting element; machine.
JP2006333071A 2006-12-11 2006-12-11 Semiconductor integrated circuit and electronic equipment Expired - Fee Related JP4846549B2 (en)

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