JP4849312B2 - Polishing method and semiconductor device manufacturing method using the polishing method - Google Patents

Description

The present invention relates to a polishing method for flatly polishing a surface of a substrate. The present invention also relates to a semiconductor device manufacturing method using this polishing method.

  Conventionally, as a polishing apparatus for flattening the surface of a substrate such as a semiconductor wafer, the substrate holding table for holding the substrate and a polishing tool installed so as to face the substrate holding table are provided. It is known that the polishing surface (polishing pad) of the polishing tool is pressed against the substrate while both the tool and the tool are rotated, and the substrate is polished by swinging both of them in the in-plane direction of the contact surface. Yes. In addition to such mechanical polishing, CMP (Chemical Mechanical Polishing) that supplies polishing liquid to the contact surface between the polishing pad and the substrate and promotes polishing of the substrate surface by the chemical action of the polishing liquid. A mechanical polishing apparatus is also known (see, for example, the following patent document).

The purpose of polishing the surface of the substrate is to make the surface of the substrate flat as a whole, and to level the local unevenness of the substrate surface (to make it uniform), so that the substrate surface has a desired shape. The purpose is to produce a substrate that satisfies both flatness and uniformity simultaneously. For this purpose, the rotation speed of the substrate, the rotation speed of the polishing tool, the contact pressure between the substrate and the polishing tool, the fluctuation of the polishing tool with respect to the substrate, and the like. It is necessary to perform polishing while setting polishing conditions such as dynamic speed to an optimum one.
JP 2001-62706 A JP 2002-217141 A

  In the surface polishing of the substrate as described above, the amount that the surface of the substrate can be scraped per unit time, that is, the polishing rate is an important factor that affects the productivity (throughput) of the substrate. The polishing pad is the same and fluctuates (varies) even if the above polishing conditions are constant. The ratio of the polishing rate to the initial polishing rate at the start of continuous polishing (hereinafter referred to as the rate of change in polishing rate). Tends to increase significantly while the polishing duration is relatively small. For this reason, it is difficult to estimate the surface shape of the current substrate based on the polishing continuation time or to predict the replacement timing of the polishing pad, which has been a factor that hinders efficient polishing.

The present invention has been made in view of such problems, and an object of the present invention is to provide a polishing method capable of suppressing the rate of change of the polishing rate with respect to the polishing duration time. Another object of the present invention is to provide a semiconductor device manufacturing method using such a polishing method.

As a result of intensive studies in view of the above problems, the present inventor has found that the rate of change of the polishing rate with respect to the polishing duration changes when the temperature of the substrate holding table is changed, leading to the present invention. That is, in the polishing method according to the present invention, the substrate is held on the substrate holding table, the polishing tool installed facing the substrate holding table is brought into contact with the substrate, and the substrate holding table and the polishing tool are moved relative to each other on the surface of the substrate. In the polishing method for performing polishing, the temperature of the substrate holder is changed, the polishing rate when polishing a plurality of substrates at each temperature is measured, and the change rate of the polishing rate with respect to the temperature of the substrate holder and the polishing duration time previously obtained data of the obtained relation, and select the temperature of the substrate holder based on the temperature dependence of the rate of change of the substrate holder of the polishing rate of the polishing duration was the selection of the temperature of the substrate holder temperature In this state, the surface of the substrate is polished. Here, the temperature of the substrate holder is preferably adjusted by supplying a temperature-adjusted liquid to a liquid channel formed in the substrate holder. Further, the temperature of the selected substrate holder is preferably a temperature at which the rate of change of the polishing rate with respect to the polishing duration is within a predetermined range. The rate of change in the polishing rate refers to the ratio of the amount of change in the polishing rate relative to the initial polishing rate at the start of continuous polishing.

The semiconductor device manufacturing method according to the present invention, the substrate is a semiconductor wafer, to have a step of flattening the surface of the semiconductor wafer using the polishing method according to the present invention.

  According to the polishing method of the present invention, it is possible to keep the rate of change of the polishing rate with respect to the polishing duration time small.

Further, according to the semiconductor device manufacturing method according to the present invention, as possible it is possible to improve the yield of the manufactured semiconductor device.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows a CMP apparatus 1 as an example of a polishing apparatus suitable for carrying out the polishing method according to the present invention. In this CMP apparatus 1, a disk-like substrate holding table 4 for holding a substrate (for example, a semiconductor wafer) 50 to be polished has a hollow cylindrical column portion 4a extending downward, and this column portion 4a. Is rotatably supported by a plurality of bearings 3 provided between the base 2 and the cylindrical inner peripheral surface 2a. The column portion 4a can be rotated around the vertical axis by a substrate holding table operating mechanism 21 that is controlled by the control device 30 (this substrate holding table operating mechanism 21 includes an electric motor (not shown)). Thus, the substrate holder 4 can be rotated in a horizontal plane.

  A polishing tool 10 having a polishing pad 11 on the lower surface is disposed above the substrate holding table 4. The polishing tool 10 is moved in a horizontal plane, moved in the vertical direction, and moved around the vertical axis by a polishing tool operating mechanism 22 that is controlled by a control device 30 (this polishing tool operating mechanism 22 includes an electric motor (not shown)). Can be rotated. The polishing pad 11 is a sheet-like member made of polyurethane or the like, and is detachably attached to the lower surface of the polishing tool 10 with an adhesive tape or the like. In the CMP apparatus 1, the diameter of the polishing pad 11 is smaller than the diameter of the substrate 50 as shown in FIG.

  Inside the substrate holding table 4, there is provided an internal vacuum line 6 for adsorbing and holding the substrate 50 on the upper surface of the substrate holding table 4 (hereinafter referred to as the substrate holding surface 5). The internal vacuum line 6 includes a plurality of horizontal lines 6a provided so as to be horizontal (parallel to the substrate holding surface 5) inside the substrate holding table 4 and to extend radially from the center of the substrate holding surface 5. A plurality of vertical pipelines 6b extending upward from the horizontal pipeline 6a and opened to the substrate holding surface 5 and a central portion of the substrate holding table 4 extend in the vertical direction and communicate with each horizontal pipeline 6a. The communication pipe 6c is connected to one end of the external vacuum pipe 7 extending in the vertical direction in the internal space of the support column 4a. The other end of the external vacuum pipe 7 extends to the outside of the substrate holding table 4 via a rotary joint 4b provided at the lower part of the support column 4a, and is connected to a vacuum generator 23 installed outside the substrate holding table 4. It is connected. The internal vacuum line 6, the external vacuum line 7 and the vacuum generator 23 constitute a vacuum chuck mechanism for adsorbing the substrate 50 to the substrate holding surface 5. The controller 30 controls the operation of the vacuum generator 23, and By sucking air through the vacuum line 7 and the internal vacuum line 6, the substrate 50 placed on the substrate holding surface 5 of the substrate holding table 4 can be fixedly held on the substrate holding table 4 by vacuum suction.

  In addition, a coolant flow path 8 that is a coolant passage is provided inside the substrate holding table 4. The coolant flow path 8 is connected to a coolant supply path 8 a provided extending upward in the vicinity of the center of the substrate holder 4 and the upper end of the coolant supply path 8 a, and is horizontal (with respect to the substrate holding surface 5). Parallel) and extending outward in the radial direction of the substrate holding surface 5, and the cooling liquid diffusion path 8b extending downward from the radially outer end of the cooling liquid diffusion path 8b. The cooling liquid return path 8c is provided so as to extend horizontally inward in the radial direction of the substrate holding surface 5 and further extend downward in the vicinity of the center of the substrate holding table 4. The coolant supply path 8a is connected to one end of an external supply path 9a extending in the vertical direction in the internal space of the support column 4a, and the coolant return path 8c is also used in the vertical direction of the internal space of the support column 4a. It is connected to one end of the extended external return path 9c. The other end of each of the external supply path 9a and the external return path 9c extends to the outside of the substrate holding table 4 via the rotary joint 4b, and is connected to a coolant supply device 25 installed outside the substrate holding table 4. ing.

As shown in FIG. 2, the coolant diffusion path 8b has a plurality of concentric circular flow paths 8p ₁ , 8p ₂ ,..., 8p ₅ and these circular flow paths 8p ₁ , 8p ₂ ,. 8p ₅ of a plurality of the between the adjacent ones provided extending radially so as to communicate the communication passage 8q, 8q, consists with .... The coolant supplied by pressure from the coolant supply device 25 into the external supply path 9 a passes through the coolant supply path 8 a extending through the substrate holding table 4 and opens to the center of the substrate holding table 4. after flowing into the coolant diffusion path 8b from 8s, it receives a centrifugal force due to rotation about the vertical axis of the substrate holder 4, radially outwardly (most outwardly of the circular passage 8p ₅₎ spreading To flow. Then, the cooling water that has flown to the outermost circular flow path 8p ₅ enters the cooling liquid return path 8c from the plurality of cooling liquid outlets 8t opened in the flow path 8p ₅ and cools from the external return path 9c. It is returned to the liquid supply device 25.

  Here, the pressure supply control of the coolant by the coolant supply device 25 can be performed from the control device 30, but the temperature adjustment of the coolant supplied by the coolant supply device 25 can also be performed from the control device 30, It is possible to hold the temperature of the substrate holder 4 at a desired temperature. That is, in this CMP apparatus 1, the temperature of the substrate holding table 4 (and thus the temperature of the substrate 50 is adjusted) is supplied to the coolant flow path 8 formed in the substrate holding table 4 by adjusting the temperature. ) It can be adjusted as desired.

  A polishing liquid supply path 12 extending in the vertical direction is provided inside the polishing tool 10 (see FIG. 1). The polishing liquid supply path 12 is connected to a polishing liquid supply apparatus 24 provided outside the polishing tool 10 by a pipe line (not shown), and the polishing liquid supply path 24 is operated by the controller 30 by operating the polishing liquid supply apparatus 24. The polishing liquid can be supplied to the lower surface of the polishing pad 11 via 12.

  In order to polish the surface of the substrate 50 in such a CMP apparatus 1, the substrate 50 is held on the substrate holding surface of the substrate holding table 4 by the above-described vacuum chuck mechanism including the internal vacuum line 6, the external vacuum line 7 and the vacuum generator 23. Then, the control device 30 controls the operation of the substrate holding table operating mechanism 21 to rotate the substrate holding table 4 in the horizontal plane, and the control device 30 also controls the operation of the polishing tool operating mechanism 22. Then, the polishing tool 10 is moved above the substrate 50 and rotated about the vertical axis. Then, the operation of the cooling liquid supply device 25 is controlled from the control device 30 to supply the cooling liquid into the cooling liquid flow path 8, and when the temperature of the substrate holding table 4 is maintained at a desired temperature, polishing is performed. The tool 10 is lowered to bring the polishing pad 11 into contact with the surface (surface to be polished) 51 of the substrate 50, and the polishing tool 10 is placed in the horizontal direction, that is, the direction parallel to the contact surface between the polishing pad 11 and the surface 51 of the substrate 50. Rocks. Further, during polishing of the substrate 50, the control device 30 controls the operation of the polishing liquid supply device 24 so that the polishing liquid supply path 12 in the polishing tool 10 is placed on the lower surface of the polishing pad 11 (that is, the polishing pad 11 and the substrate 50. The polishing liquid is supplied to the contact surface. Thereby, the surface 51 of the substrate 50 is polished flat.

  The purpose of surface polishing of the substrate 50 is to flatten the surface 51 of the substrate 50 as a whole, and to level out local unevenness on the surface of the substrate 50 (to make it uniform) The purpose is to produce a substrate 50 having a desired shape, that is, the flatness and the uniformity that are simultaneously satisfied. For that purpose, the rotation speed of the substrate 50 (of the substrate holder 4), the rotation speed of the polishing tool 10, the contact pressure between the substrate 50 and the polishing tool 10, the swinging speed of the polishing tool 10 with respect to the substrate 50, etc. However, in the polishing method according to the present invention, in order to perform efficient polishing by reducing the variation in the polishing rate, in addition to the above polishing conditions, a substrate is used. The temperature of the substrate holder 4 that holds 50 is also set as the polishing condition.

This is based on the fact that the inventor found out as a result of an experiment that the rate of change of the polishing rate with respect to the polishing duration changes when the temperature of the substrate holder 4 is changed. The polishing rate here means an average polishing rate of the entire substrate 50. When there is a polishing rate distribution in the radial direction of the substrate 50, the average value (for example, polishing at the center of the substrate 50). The average value of the speed and the polishing speed at the periphery of the substrate 50). The rate of change of the polishing rate is the ratio of the amount of change in the polishing rate to the initial polishing rate (for a certain polishing pad 11) when the first substrate 50 is polished. When the polishing rate calculated in (1) is γ ₀ and the polishing rate at the time of calculating the rate of change of the polishing rate is γ, the rate of change of the polishing rate is the amount of change Δγ (= γ−γ ₀ ) can be expressed as Δγ / γ ₀ .

As described above, since the rate of change of the polishing rate with respect to the polishing duration varies depending on the temperature of the substrate holder 4, the relationship between the temperature of the substrate holder 4 and the rate of change of the polishing rate with respect to the duration of polishing is shown in advance. Data is acquired, and based on the acquired data, the temperature of the substrate holder 4 that can suppress the rate of change of the polishing rate to a small value is selected, and the temperature of the substrate holder 4 is held at the selected temperature. if to perform polishing of the substrate 50 in a state, regardless of the polishing duration (number of polished substrate 50), it is possible to perform polishing of the substrate 50 at a substantially constant polishing rate. Here, for the “small value”, for example, a specific numerical value such as “within 2%” may be determined and used as a reference.

  Next, the polishing method according to the present invention will be described with reference to FIGS. In the polishing method according to the present invention, first, as described above, it is necessary to acquire data indicating the relationship between the temperature of the substrate holder 4 and the rate of change of the polishing rate with respect to the polishing duration (of the polishing method of FIG. 3). Step S1 shown in the main flow showing the procedure). As shown in FIG. 4 which is a flow of a subroutine (step S1) in the main flow, the relational data is acquired by first setting n = 1 (step S101) and the n (= 1) th substrate 50 (this step). The substrate 50 used in S1 is a sample for data acquisition) (step S102), and after measuring the surface shape (step S103), the temperature of the substrate holding table 4 is held constant, and the substrate 50 Polishing is performed for a predetermined time (step S104), and then the surface shape of the substrate 50 is measured again (step S105). For the measurement of the surface shape of the substrate 50, a contact type in which a probe is brought into contact with the surface of the substrate 50 to measure the uneven shape, a non-contact type using light, or the like can be used.

  When step S105 is completed, it is determined whether or not the polishing of a predetermined number of substrates 50 (the number corresponding to a predetermined polishing duration) has been completed (step S106). Then, when the polishing of the predetermined number of substrates 50 is not completed, n = n + 1 is set (step S107), and the process returns to step S102, and when the polishing of the predetermined number of substrates 50 is completed, the number of the polished substrates 50 is increased. A polishing rate is calculated (step S108). Then, it is determined whether or not the data for all the planned temperatures has been acquired, that is, whether or not the data is sufficient (step S109). If the data is not sufficient, the setting of the substrate holder 4 is set. After changing the temperature (step S110), the process returns to step S101, and if the data is sufficiently prepared, the polishing for the temperature of the substrate holder 4 and the polishing duration time from the data for each temperature obtained in step S108. Data indicating the relationship with the rate of change in speed is created (step S111), and a series of processing ends.

  5 to 7 show an example of data obtained in the procedure of step S1 (the number of substrates 50 used as a sample is n = 49). FIG. 5 shows the polishing rate for each number of polished substrates. Data expressed in correspondence with the temperature of the substrate holder 4 (data obtained by repeating step S108), the graph shown in FIG. 6 is the temperature of the substrate holder 4 obtained based on the result shown in FIG. And data indicating the relationship between the polishing rate change rate and the polishing duration time (data obtained in step S111). FIG. 7 shows the maximum value of the rate of change of the polishing rate read from the graph of FIG. 6 when all the samples (substrate 50) have been polished.

  In the example shown here, the temperature of the substrate holder 4 is 23 ° C. (normal temperature level), 10 ° C. (lower than normal temperature), 35 ° C. (higher than normal temperature), and the temperature of the substrate holder 4 is 23 ° C. The maximum rate of change in the polishing rate at that time was 5%, but when the temperature of the substrate holder 4 was 10 ° C., the maximum rate of change in the polishing rate was reduced to 2%. On the other hand, when the temperature of the substrate holder 4 reached 35 ° C., the maximum rate of change of the polishing rate increased to 17%. Since the polishing conditions were common except for the temperature of the substrate holder 4 when acquiring these three data, it can be seen that the rate of change of the polishing rate was changed only by raising and lowering the temperature of the substrate holder 4. Further, according to the graph shown in FIG. 6, when the temperature of the substrate holder 4 is 23 ° C. or 35 ° C., the rate of change of the polishing rate is remarkably increased while the polishing duration is relatively small, but a certain number of sheets ( It can be seen that when the number of continuously polished substrates 50 reaches within 30), the rate of change of the polishing rate tends to be substantially constant (in detail, slightly decreases). On the other hand, when the temperature of the substrate holder 4 is 10 ° C., the rate of change of the polishing rate is within 2% even when the polishing duration is increased, and the rate of change is kept very small.

  When data indicating the relationship between the temperature of the substrate holder 4 and the rate of change of the polishing rate with respect to the polishing duration time is obtained in step S1, the surface shape of the substrate 50 to be polished is measured (in the flow of FIG. 3). Step S2), initial polishing conditions are set (Step S3). The initial polishing conditions referred to here are polishing conditions set at the start of polishing of the substrate 50. With respect to polishing conditions other than the temperature of the substrate holder 4, the uniformity and flatness of the substrate 50 are sufficient. Set to. Further, regarding the temperature of the substrate holder 4, the change rate of the polishing rate is sufficiently determined based on the data indicating the relationship between the temperature of the substrate holder 4 obtained in step S 1 and the rate of change of the polishing rate with respect to the polishing duration. A value that can be kept small is arbitrarily selected and set. According to the above example, the temperature of the substrate holder 4 is preferably 23 ° C. (around 23 ° C.) rather than 35 ° C. (around 35 ° C.), and more than 23 ° C. (around 23 ° C.). It is preferable that it is 10 degreeC (around 10 degreeC). Although it may be lower than 10 ° C. (around 10 ° C.), if the temperature of the substrate holder 4 is too low, various problems other than the rate of change of the polishing rate such as dew condensation may occur. For this reason, it is preferable to acquire sufficient data for selecting the optimum temperature in the relational data acquisition process in step S1.

  After the initial polishing conditions are set, the substrate 50 is polished using the set initial polishing conditions (step S4). When the polishing of the substrate 50 proceeds to some extent, the polishing is temporarily interrupted, and the surface shape of the substrate 50 is measured (step S5), and whether the uniformity and flatness of the surface 51 of the substrate 50 are sufficient. Is determined (step S6). When it is determined that the uniformity and flatness of the substrate 50 are sufficient, the polishing process for the substrate 50 is finished, and the uniformity and flatness of the surface 51 of the substrate 50 are sufficient in step S6. If it is determined that the polishing is not performed, polishing conditions other than the temperature of the substrate holder 4 (the rotation speed of the substrate 50, the rotation speed of the polishing tool 10, the contact pressure between the substrate 50 and the polishing tool 10, the substrate After changing the polishing conditions such as the rocking speed of the polishing tool 10 with respect to 50 (step S7), the process returns to step S4 and the polishing of the substrate 50 is resumed.

  As described above, the polishing method according to the present invention selects the temperature of the substrate holding table 4 based on the data indicating the relationship between the temperature of the substrate holding table 4 and the rate of change of the polishing rate with respect to the polishing duration time acquired in advance. The substrate 50 is polished in a state where the temperature of the substrate holder 4 is held at the selected temperature. As a result, in the polishing process of the substrate 50, the rate of change of the polishing rate with respect to the polishing duration time can be kept small, so that the change in the surface shape of the substrate 50 accompanying polishing and the replacement timing of the polishing pad 11 can be accurately predicted. As a result, polishing efficiency is improved.

  FIG. 8 is a flowchart showing a process of a semiconductor device manufacturing method according to an embodiment of the present invention. When the semiconductor manufacturing process is started, first, in step S200, an appropriate processing step is selected from the following steps S201 to S204, and the process proceeds to any step. Here, step S201 is an oxidation process for oxidizing the surface of a semiconductor wafer (hereinafter referred to as a wafer) which is a substrate. Step S202 is a CVD process for forming an insulating film or a dielectric film on the wafer surface by CVD or the like. Step S203 is an electrode forming process for forming electrodes on the wafer by vapor deposition or the like. Step S204 is an ion implantation process for implanting ions into the wafer.

  After the CVD process (S202) or the electrode formation process (S203), the process proceeds to step S205. Step S205 is a CMP process. In the CMP process, the above-described polishing method according to the present invention performs planarization of the interlayer insulating film, polishing of the metal film on the surface of the semiconductor device, formation of damascene by polishing of the dielectric film, and the like.

  After the CMP process (S205) or the oxidation process (S201), the process proceeds to step S206. Step S206 is a photolithography process. In this step, a resist is applied to the wafer, a circuit pattern is printed on the wafer by exposure using an exposure apparatus, and the exposed wafer is developed. Further, the next step S207 is an etching process in which portions other than the developed resist image are etched away, and then the resist is peeled off to remove the unnecessary resist after etching.

  Next, it is determined in step S208 whether all necessary processes are completed. If not completed, the process returns to step S200, and the previous steps are repeated to form a circuit pattern on the wafer. If it is determined in step S208 that all processes have been completed, the process ends.

  As described above, in the semiconductor device manufacturing method according to the present invention, the polishing method according to the present invention is used to polish the wafer as the substrate in the CMP step, so that both flatness and uniformity are satisfied with high polishing efficiency. The produced wafer is easily generated. For this reason, the number of chips that can be cut out from the generated wafer can be increased and the yield of the manufactured semiconductor devices can be improved. Therefore, it is possible to manufacture semiconductor devices at a lower cost than conventional semiconductor device manufacturing methods. It becomes possible. Note that the polishing method according to the present invention may be used in a CMP process of a semiconductor device manufacturing process other than the semiconductor device manufacturing process. In addition, since the semiconductor device manufactured by the semiconductor device manufacturing method according to the present invention is manufactured at a high yield, it becomes a low-cost semiconductor device. In addition, since these semiconductor devices are based on a wafer having a high flatness, the semiconductor devices are good in performance with few defects such as defective wiring insulation and short circuit.

  Although the preferred embodiments of the present invention have been described so far, the scope of the present invention is not limited to those shown in the above-described embodiments. For example, in the above-described embodiment, the temperature of the substrate holding table 4 is adjusted by supplying the temperature-adjusted cooling liquid to the cooling liquid flow path 8 formed in the substrate holding table 4. The temperature of the substrate holder 4 may be adjusted by a configuration in which a Peltier element is provided on the substrate holder 4 or another method (configuration). However, as in the above-described embodiment, the method of adjusting the temperature of the substrate holding table 4 by supplying the temperature-adjusted cooling liquid is a generally performed method, and thus a dedicated facility is provided separately. This is preferable in that respect because it is unnecessary and the temperature of the substrate holder 4 can be easily adjusted. Further, even when the above-described configuration for supplying a liquid (cooling liquid) whose temperature is adjusted to the liquid channel (cooling liquid channel 8) is adopted, the configuration of the liquid channel or the liquid channel The direction in which the liquid flows is not limited to that shown in the above embodiment.

  In the above-described embodiment, data indicating the relationship between the temperature of the substrate holder 4 and the rate of change of the polishing rate with respect to the polishing duration time is acquired according to the flow shown in FIG. The data acquisition procedure showing the relationship between the temperature of the wafer and the rate of change of the polishing rate with respect to the polishing duration time is not limited to the flow procedure shown in FIG. In addition, after the data indicating the relationship between the temperature of the substrate holder 4 and the rate of change of the polishing rate with respect to the polishing duration time is obtained, the substrate 50 is polished using the same CMP apparatus 1 thereafter. Of course, if the relationship data obtained previously can be used, there is no need to go through the flow procedure shown in FIG.

  In addition, the polishing method according to the present invention selects the temperature of the substrate holding table 4 based on the data obtained in advance indicating the relationship between the temperature of the substrate holding table 4 and the rate of change of the polishing rate with respect to the polishing duration. The substrate is polished while the temperature of the holding table 4 is maintained at the selected temperature, and the polishing procedure for the substrate 50 is limited to the flow shown in FIG. 3 without departing from this point. It is not a thing.

1 is a simplified configuration diagram of a CMP apparatus which is an example of a polishing apparatus suitable for carrying out a polishing method according to the present invention. It is a top view of the board | substrate holding stand seen from the arrow II-II in FIG. 1 which shows the structure of a cooling fluid flow path. It is a main flow which shows the procedure of the grinding | polishing method which concerns on this invention. It is a flow of a subroutine (Step S1) in the main flow shown in FIG. This is data representing the polishing rate for each number of polished substrates for each temperature of the substrate holder. 6 is data showing the relationship between the temperature of the substrate holder and the rate of change of the polishing rate with respect to the polishing duration, obtained based on the results shown in FIG. It is the maximum value of the rate of change of the polishing rate read from the graph of FIG. It is a flowchart which shows an example of the semiconductor device manufacturing method concerning this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 CMP apparatus 4 Substrate holding stand 7 Coolant flow path 10 Polishing tool 11 Polishing pad 25 Coolant supply apparatus 50 Substrate 51 Surface of substrate

Claims (4)

Polishing by holding a substrate on a substrate holding table, bringing a polishing tool placed facing the substrate holding table into contact with the substrate, and moving the substrate holding table and the polishing tool relative to each other to polish the surface of the substrate In the method
The temperature of the substrate holding table was changed, the polishing rate when polishing a plurality of the substrates at each temperature was measured, and the relationship between the temperature of the substrate holding table and the rate of change of the polishing rate with respect to the polishing duration was obtained. Data is acquired in advance, the temperature of the substrate holding table is selected based on the temperature dependency of the substrate holding table of the rate of change of the polishing rate with respect to the polishing duration, and the temperature of the substrate holding table is set to the selected temperature. A polishing method comprising polishing the surface of the substrate in a held state.   The polishing method according to claim 1, wherein the temperature of the substrate holding table is adjusted by supplying a temperature-adjusted liquid to a liquid channel formed inside the substrate holding table. .   3. The polishing method according to claim 1, wherein the temperature of the selected substrate holder is a temperature at which a rate of change of a polishing rate with respect to the polishing duration is within a predetermined range.   A semiconductor device manufacturing method, comprising: a step of planarizing a surface of the semiconductor wafer using the polishing method according to claim 1, wherein the substrate is a semiconductor wafer.

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