JP4852387B2 - Manufacturing method of semiconductor chip with adhesive layer and manufacturing method of semiconductor chip laminate - Google Patents

Description

The present invention relates to a method for manufacturing a semiconductor chip with an adhesive layer that does not damage or cause contamination of a semiconductor chip or a semiconductor chip stack, and a method for manufacturing a semiconductor chip stack.

As a method of manufacturing a semiconductor chip with an adhesive by dividing the semiconductor wafer into individual semiconductor chips, a method that does not damage the semiconductor chip has been conventionally sought.
For example, in Patent Document 1, after a semiconductor chip is divided by sticking a protective member on the surface of a semiconductor wafer provided with a division groove having a predetermined depth and grinding the semiconductor wafer from the back surface to expose the division groove, Adhering an adhesive film that is altered by laser light irradiation from the surface, and then irradiating laser light from the back side of the semiconductor chip to form an altered region along the dividing groove in the adhesive film, and then breaking along the altered region A method has been proposed.

However, according to such a method, the adhesive film may be deteriorated to the inner side from the portion to be altered with the irradiation of the laser beam. If the region more than necessary is altered, gas or the like is generated during the alteration process, leading to a problem that the semiconductor chip is contaminated. In addition, when the adhesive film is broken to divide the chip, there is a problem that excessive stress is applied to the semiconductor chip and the semiconductor chip is damaged. Furthermore, there is a problem that inconvenience occurs when the semiconductor chip is bonded to another member using the adhesive film after the division.
JP 2006-245209 A

In view of the above-described situation, the present invention provides a method for manufacturing a semiconductor chip with an adhesive layer and a method for manufacturing a semiconductor chip stack without causing damage or contamination of the semiconductor chip. Objective.

The present invention is a method of manufacturing a semiconductor chip with an adhesive layer in which an adhesive layer is formed on the surface of the semiconductor chip, and the adhesive film, the semiconductor wafer divided into individual semiconductor chips, and a protective film are laminated in this order. has been the protective film of the laminate, to break the adhesive film stretching horizontally, have a step of dividing the semiconductor chip with the adhesive layer, the laminate is given from the surface side of the semiconductor wafer A step (A) of forming a depth-divided groove, a step (B) of attaching a back grind film to the surface of the semiconductor wafer on which the division groove is formed, and a back surface of the semiconductor wafer to which the back grind film is affixed. Grinding (C) to expose the dividing grooves to divide into individual semiconductor chips, and a semiconductor wafer divided into the individual semiconductor chips. After attaching a back surface of the protective film, which is the back-grinding film manufacturing method of the semiconductor chip with the adhesive layer which is produced through a step of adhering the adhesive film (D) in place of.

The present invention is also a method for manufacturing a semiconductor chip laminate in which semiconductor chips and adhesive layers are alternately laminated, and includes an adhesive film, a first semiconductor wafer divided into individual semiconductor chips, and a protective film Are stacked in this order on the opposite side of the surface of the adhesive film on which the first semiconductor wafer is stacked, and further on the bottom surface of the second semiconductor wafer divided into individual semiconductor chips. A step of stretching the protective film of the multilayer laminate laminated in contact with the adhesive film in the horizontal direction to break the adhesive film and dividing it into a semiconductor chip laminate with an adhesive layer It is a manufacturing method of a laminated body.
The present invention is described in detail below.

The present invention is a method for manufacturing a semiconductor chip with an adhesive layer in which an adhesive layer is formed on the surface of the semiconductor chip.
The manufacturing method of a semiconductor chip with an adhesive layer of the present invention (hereinafter also referred to as the manufacturing method of the present invention 1) is a laminate in which an adhesive film, a semiconductor wafer divided into individual semiconductor chips, and a protective film are stacked in this order. The process includes a step of stretching the protective film of the body in the horizontal direction to break the adhesive film and dividing it into semiconductor chips with an adhesive layer.
In this specification, “the surface of the semiconductor chip” and “the surface of the semiconductor wafer” mean a surface provided with electrical connection terminals such as bumps and wire bonding connection terminals of the semiconductor chip and the semiconductor wafer. . Moreover, when the electrical connection terminals such as bumps and wire bonding connection terminals are provided on the rear surface as in the case of the wafer on which the through electrode is formed, when the surface is in contact with the protective film, the rear surface is also included. For example, after grinding the back surface, it is possible to transfer it to an adhesive tape and then stick it to a protective film.

A laminate in which the adhesive film, a semiconductor wafer divided into individual semiconductor chips, and a protective film are laminated in this order can be manufactured by, for example, a so-called first dicing method or a post dicing method.

The tip dicing method is not particularly limited. For example, the step (A) of forming a division groove having a predetermined depth from the surface side of the semiconductor wafer, and a back grind film on the surface of the semiconductor wafer on which the division groove is formed. Step (B) for pasting, step (C) for grinding the back surface of the semiconductor wafer to which the back grind film is pasted, exposing the dividing grooves to divide into individual semiconductor chips, and the individual semiconductor chips. A method having a step (D) of adhering the adhesive film in place of the back grind film after the rear surface of the semiconductor wafer divided into two is adhered to the protective film is preferably used.
If necessary, after the back surface is ground, treatments such as polishing, etching, metal plating, metal vapor deposition, and insulating film formation may be performed.

In the above-mentioned dicing method, first, the step (A) of forming a dividing groove having a predetermined depth from the surface side of the semiconductor wafer is performed.
The semiconductor wafer is not particularly limited, and examples thereof include a silicon wafer conventionally used when manufacturing semiconductor devices such as IC and LSI.

On the surface of the semiconductor wafer, electrical connection terminals such as pads, bumps, and wire bonding connection terminals are formed for each semiconductor chip with an adhesive layer to be manufactured. Further, electrodes or the like may be provided on both the front and back surfaces by through electrodes or the like penetrating the front and back surfaces. In this step (A), a division groove having a predetermined depth is formed between electrical connection terminals and the like provided on the surface of the semiconductor wafer.

The method for forming the divided grooves is not particularly limited, and examples thereof include a method using a conventionally known cutting apparatus provided with a chuck table for holding and fixing a semiconductor wafer and a cutting means for cutting the semiconductor wafer.

The depth of the dividing groove formed in this step (A) is not particularly limited, and is appropriately adjusted to be equal to the target semiconductor chip thickness.

Next, the process (B) of sticking a back grind film on the surface of the semiconductor wafer on which the dividing grooves are formed is performed.
The back grind film is not particularly limited, and for example, a conventionally known film such as a polyolefin sheet used in polishing a semiconductor wafer can be used.

Next, a process (C) is performed in which the back surface of the semiconductor wafer having the back grind film bonded thereto is ground, and the divided grooves are exposed to be divided into individual semiconductor chips.
The method for grinding the back surface of the semiconductor wafer is not particularly limited, and includes, for example, a chuck table for holding and fixing the semiconductor wafer to which the back grind film is adhered, and a grinding means for grinding the back surface of the semiconductor wafer. The method using a conventionally well-known grinding apparatus is mentioned.

In this step (C), the conditions for grinding the back surface of the semiconductor wafer are not particularly limited. For example, in consideration of the type of semiconductor wafer to be used, the thickness to be ground, the size of the ground surface, etc. Is appropriately adjusted to such a condition as not to be damaged.
In addition, although the said semiconductor wafer is divided | segmented into each semiconductor chip by performing this process (C), the back grind film mentioned above is stuck on the surface of this each divided | segmented semiconductor chip. Therefore, it does not fall apart and maintains the same shape as the semiconductor wafer.

In the tip dicing method, after pasting the back surface of the semiconductor wafer divided into the individual semiconductor chips to a protective film, by performing the step (D) of pasting an adhesive film instead of the back grind film, The said laminated body can be manufactured.
It does not specifically limit as a protective film stuck on the back surface of the semiconductor wafer divided | segmented into the said individual semiconductor chip, For example, the thing similar to a conventionally well-known various dicing tape is mentioned. Especially, since it is excellent in expandability, what consists of polyolefin resin is suitable.
Examples of commercially available dicing tape include “PE tape # 6318-B” (manufactured by Sekisui Chemical Co., Ltd., thickness 70 μm, base polyethylene, adhesive rubber-based adhesive material 10 μm) and the like.

In the production method of the present invention 1, it is necessary to select the protective film having a higher elongation at break than the adhesive film described later. The elongation at break of the protective film is the same as or lower than that of the adhesive film described later, and when the laminate produced as described later is stretched horizontally, the adhesive film is broken before breaking the adhesive film. Since the protective film is broken, a semiconductor chip with an adhesive layer cannot be manufactured.
Specifically, the difference between the breaking elongation of the protective film and the breaking elongation of the adhesive film is preferably 20% or more.

In this step (D), the back grind film adhered to the surface of the semiconductor wafer divided into the individual semiconductor chips is peeled off, and the adhesive is applied to the surface of the semiconductor wafer on which the back grind film is adhered. Affix the film.
According to such a tip dicing method, grinding scraps are produced when the dividing grooves are formed on the surface of the semiconductor wafer or when the back surface is ground. However, the grinding scraps adhere to the back grind film. In this step (D), the grinding waste can be removed together with the back grind film by replacing the back grind film with an adhesive film.
The adhesive film will be described later in detail.

Although it does not specifically limit as said post-dicing method, For example, the process (a) of sticking one surface of the semiconductor wafer which adjusted thickness to a protective film, dicing the semiconductor wafer which adjusted said thickness, and performing each dicing A method having a step (b) of dividing into semiconductor chips and a step (c) of attaching an adhesive film to the other surface of the semiconductor wafer divided into the individual semiconductor chips is preferably used.

In the post-dicing method, the step (a) of attaching the protective film to one surface of the semiconductor wafer whose thickness is adjusted is performed.
Examples of the semiconductor wafer include a silicon wafer that has been conventionally used for manufacturing semiconductor devices such as ICs and LSIs.

It does not specifically limit as said protective film, For example, the thing similar to what was demonstrated by the tip dicing method mentioned above is mentioned.
The thickness of the semiconductor wafer is adjusted to be equal to a predetermined thickness at the time of performing the step (a), that is, the thickness of the target semiconductor chip.

Next, a step (b) of dicing the semiconductor wafer having the adjusted thickness and dividing it into individual semiconductor chips is performed.
It does not specifically limit as a method of performing the said dicing, For example, it can carry out using the apparatus similar to the cutting apparatus used at the process (a) in the tip dicing method mentioned above.

In addition, although the said semiconductor wafer is divided | segmented into each semiconductor chip by performing this process (b), the protective film mentioned above is stuck on the back surface of this each divided semiconductor chip. Therefore, it does not fall apart and maintains substantially the same shape as the semiconductor wafer.

Next, the said laminated body can be manufactured by performing the process (c) of sticking an adhesive film on the other surface of the semiconductor wafer divided | segmented into the said individual semiconductor chip.

In the manufacturing method of the present invention 1, the adhesive film constitutes the adhesive layer of the semiconductor chip with an adhesive layer to be manufactured, and as described above, the elongation at break is lower than that of the protective film. is necessary.
Such an adhesive film has a preferable lower limit of elongation at break of 100% and a preferable upper limit of 2000% before being cured. When it is less than 100%, the adhesive film adhered to the surface of the semiconductor wafer may be peeled off, and when it exceeds 2000%, when the protective film of the laminate produced as described later is stretched in the horizontal direction In addition, an area that cannot be sufficiently split may occur. A more preferred lower limit is 500%, and a more preferred upper limit is 1500%.
In the present specification, the elongation at break means the elongation at which the adhesive film breaks when the film is cut into a width of 5 cm × 10 mm and both ends are pulled.

The adhesive film preferably has an upper limit of breaking strength of 5 kg / 10 mm. If it exceeds 5 kg / 10 mm, the protrusion-shaped structure such as bumps formed on the front surface or the back surface of the semiconductor wafer may be damaged. A more preferable upper limit is 2 kg / 10 mm.

The adhesive film is preferably a thermosetting adhesive film or a thermoplastic adhesive film. Among these, a thermosetting adhesive film is more preferable.

The material of the thermoplastic adhesive film is not particularly limited as long as it is a material that is plasticized by heat, such as polyimide.

When the adhesive film is a thermosetting adhesive film, the material is not particularly limited as long as it is composed of a thermosetting resin and a thermosetting agent. For example, a material exhibiting elongation at break in the above range is used. Can be appropriately selected and used. Especially, it is preferable to consist of a thermosetting resin composition containing an epoxy resin and a thermosetting agent from the viewpoint of the reliability of the semiconductor chip with an adhesive layer to manufacture.

The epoxy resin is not particularly limited, but an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is preferable. When an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is used, the cured thermosetting resin composition is rigid and inhibits the movement of molecules, so that it has excellent mechanical strength and heat resistance, and is also resistant to moisture. Sexuality is also improved.

The epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is not particularly limited. For example, an epoxy resin having a dicyclopentadiene skeleton such as dicyclopentadiene dioxide or a phenol novolac epoxy resin having a dicyclopentadiene skeleton ( Hereinafter referred to as “dicyclopentadiene type epoxy resin”), 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1, Epoxy resins having a naphthalene skeleton such as 7-diglycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, 1,2,5,6-tetraglycidylnaphthalene (hereinafter referred to as “naphthalene type epoxy resin”), Tetrahydroxypheny Ethane type epoxy resins, tetrakis (glycidyloxyphenyl) ethane, 3,4-epoxy-6-methylcyclohexyl-3,4-epoxy-6-methylcyclohexane carbonate, and the like. Of these, dicyclopentadiene type epoxy resins and naphthalene type epoxy resins are preferably used.

These epoxy resins having a polycyclic hydrocarbon skeleton in the main chain may be used alone or in combination of two or more. Moreover, the said dicyclopentadiene type | mold epoxy resin and naphthalene type | mold epoxy resin may each be used independently, and both may be used together.

Although it does not specifically limit as an epoxy resin which has the said polycyclic hydrocarbon skeleton in a principal chain, The minimum with a preferable weight average molecular weight is 500, and a preferable upper limit is 1000. When the weight average molecular weight of the epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is less than 500, the mechanical strength, heat resistance, moisture resistance, etc. of the cured thermosetting resin composition are not sufficiently improved. If the weight average molecular weight exceeds 1000, the cured thermosetting resin composition may become too rigid and brittle.

The thermosetting agent is not particularly limited. For example, a thermosetting acid anhydride curing agent such as trialkyltetrahydrophthalic anhydride, a phenol curing agent, an amine curing agent, a latent curing agent such as dicyandiamide, Cationic catalyst type curing agents and the like can be mentioned. These epoxy resin curing agents may be used alone or in combination of two or more.

Among the above-mentioned curing agents, a thermosetting curing agent that is liquid at normal temperature and a latent curing agent such as dicyandiamide that is multifunctional and may be added in a small amount equivalently are preferably used. By using such a curing agent, it is possible to obtain a film that is flexible at room temperature and has good handling properties before curing.

Typical examples of the thermosetting curing agent that is liquid at room temperature include acid anhydrides such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, and trialkyltetrahydrophthalic anhydride. System curing agent. Of these, methylnadic acid anhydride and trialkyltetrahydrophthalic anhydride are preferably used because they are hydrophobized. These acid anhydride curing agents may be used alone or in combination of two or more.

In the said thermosetting resin composition, in order to adjust a cure rate, the physical property of hardened | cured material, etc., you may use a hardening accelerator together with the said hardening | curing agent.

It does not specifically limit as said hardening accelerator, For example, an imidazole series hardening accelerator, a tertiary amine type hardening accelerator, etc. are mentioned. Among these, an imidazole-based curing accelerator is preferably used because it is easy to control the reaction system for adjusting the curing speed and the physical properties of the cured product. These hardening accelerators may be used independently and 2 or more types may be used together.

The imidazole curing accelerator is not particularly limited. For example, 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, or a trade name “2MAOK-PW” in which basicity is protected with isocyanuric acid. (Made by Shikoku Kasei Kogyo Co., Ltd.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.

When the acid anhydride curing agent is used in combination with a curing accelerator such as an imidazole curing accelerator, the addition amount of the acid anhydride curing agent is less than or equal to the theoretically required equivalent to the epoxy group. It is preferable to do. If the addition amount of the acid anhydride curing agent is excessive more than necessary, chlorine ions may be easily eluted by moisture from the cured product of the thermosetting resin composition. For example, when an elution component is extracted with hot water from a cured thermosetting resin composition, the pH of the extracted water is lowered to about 4 to 5, and a large amount of chlorine ions extracted from the epoxy resin is eluted. May end up.

In addition, when an amine curing agent is used in combination with a curing accelerator such as an imidazole curing accelerator, the addition amount of the amine curing agent should be less than or equal to the theoretically required equivalent to the epoxy group. Is preferred. If the addition amount of the amine-based curing agent is excessive more than necessary, chlorine ions may be easily eluted by moisture from the cured product of the thermosetting resin composition. For example, when an elution component is extracted with hot water from a cured thermosetting resin composition, the pH of the extracted water becomes basic and the chloride ions extracted from the epoxy resin may be eluted in large amounts. is there.

Moreover, it is preferable that the said thermosetting resin composition contains the solid polymer which has a functional group which reacts with an epoxy resin further. By containing the solid polymer which has a functional group which reacts with an epoxy resin, it becomes a curable composition with higher thermal reliability of hardened | cured material. Although it does not specifically limit as a solid polymer which has a functional group which reacts with the said epoxy group, For example, resin which has an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group etc. is mentioned. Among these, a polymer having an epoxy group is preferable. When the high molecular polymer which has an epoxy group is used, the flexibility of the curable resin composition after hardening can be improved.

In addition, when an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain and a polymer polymer having an epoxy group are used, the cured curable resin composition has the polycyclic hydrocarbon skeleton in the main chain. The mechanical strength, heat resistance, and moisture resistance are increased due to the epoxy resin having, and the flexibility is also increased due to the high molecular polymer having the epoxy group.

The polymer having an epoxy group is not particularly limited as long as it is a polymer having an epoxy group at the terminal and / or side chain (pendant position). For example, epoxy group-containing acrylic rubber, epoxy group-containing Examples thereof include butadiene rubber, bisphenol type high molecular weight epoxy resin, epoxy group-containing phenoxy resin, epoxy group-containing acrylic resin, epoxy group-containing urethane resin, and epoxy group-containing polyester resin. Especially, since the mechanical strength and heat resistance of the curable resin composition after hardening can be improved, an epoxy group containing acrylic resin is used suitably. These polymer polymers having an epoxy group may be used alone or in combination of two or more.

The adhesive film preferably contains fine particles. The inclusion of fine particles is preferable because it is more easily broken by a tensile force.
Although it does not specifically limit as said fine particle, Particle | grains, such as a silica, an alumina, a calcium carbonate, a titanium oxide, a fumed silica, can be used. Particularly preferred are fused silica and fumed silica.
The average particle size of the fine particles is not particularly limited, but a preferable lower limit is 0.01 μm and a preferable upper limit is 5 μm. If it is less than 0.01 μm, it may not be easy to break even if fine particles are added, and if it exceeds 5 μm, the fracture surface may be uneven.
The blending amount of the fine particles is not particularly limited, but the preferred lower limit is 1 part by weight and the preferred upper limit is 100 parts by weight with respect to 100 parts by weight of the resin component constituting the adhesive film. If the amount is less than 1 part by weight, the ease of breaking may not be sufficiently exhibited, and if it exceeds 100 parts by weight, a sufficient elongation at break may not be exhibited.
The surface of the fine particles is preferably hydrophobized. Thereby, it becomes easy to fracture.

The adhesive film can be obtained by applying the thermosetting resin composition or the thermoplastic resin composition onto a substrate film by a suitable coating method such as hot melt coating or solvent coating.

When the adhesive film is made of the thermosetting resin composition, the reaction rate of the thermosetting resin under a heat treatment condition at 50 ° C. for 5 minutes is 10% or less, and the reaction rate after 24 hours is 20%. The following is preferable. If it exceeds 20%, voids may occur at the time of bonding, and problems such as a decrease in adhesive strength may occur.

In the method of the present invention 1, the protective film of the laminate having the structure described above is stretched in the horizontal direction to break the adhesive film.
The method of stretching the protective film of the laminate in the horizontal direction is not particularly limited, and examples thereof include a method using a conventionally known apparatus. Specifically, for example, “Die Bonder, BESTTEM-D02” manufactured by NEC Machinery Corporation. And the like.

In the manufacturing method of the first aspect of the present invention, after the protective film and the adhesive film having greatly different elongation rates are laminated to each other as described above, the protective film which is the lowermost layer is stretched so that the distance between the individual semiconductor chips is increased. The adhesive film is sufficiently spread, and the adhesive film is pulled in the horizontal direction at that time, stress is concentrated between the semiconductor chips and is broken at the portion between the semiconductor chips, and the adhesive film is separated along the dividing line of the semiconductor chips. It can be easily broken, and a semiconductor chip with an adhesive layer (broken adhesive film) can be manufactured.

The amount of the laminate to be stretched in the horizontal direction is not particularly limited and is appropriately determined according to the adhesive film to be used and the raw material of the protective film, etc. It is adjusted as long as it does not break.

Moreover, it is a manufacturing method of the semiconductor chip laminated body by which the semiconductor chip and the adhesive bond layer were laminated | stacked alternately, Comprising: The adhesive film, the 1st semiconductor wafer divided | segmented into each semiconductor chip, and a protective film are laminated | stacked in this order The adhesive film of the laminated body is opposite to the surface on which the first semiconductor wafer is laminated, and the second semiconductor wafer divided into individual semiconductor chips has the bottom surface of the adhesive film. The method of manufacturing a semiconductor chip laminate, comprising: a step of stretching the protective film of the multilayer laminate laminated so as to be in contact with the substrate in a horizontal direction to break the adhesive film and dividing the adhesive film into a semiconductor chip laminate with an adhesive layer Is also one aspect of the present invention.

In the manufacturing method of the semiconductor chip laminate of the present invention (hereinafter also referred to as the manufacturing method of the present invention 2), the adhesive film, the first semiconductor wafer divided into individual semiconductor chips, and the protective film are laminated in this order. A second semiconductor that is further divided into individual semiconductor chips on the opposite surface (hereinafter also referred to as the upper surface of the adhesive film) of the adhesive film of the laminate to the surface on which the first semiconductor wafer is laminated. A step of dividing the protective film of the multilayer laminate laminated in such a manner that the bottom surface of the wafer is in contact with the adhesive film, horizontally breaking the adhesive film and dividing it into a semiconductor chip laminate with an adhesive layer Have

In the manufacturing method of the present invention 2, the above-mentioned adhesive film, the first semiconductor wafer divided into individual semiconductor chips, and a laminate in which the protective film is laminated in this order will be described in the manufacturing method of the present invention 1 described above. The same thing as what was done is mentioned.

In the manufacturing method according to the second aspect of the invention, the multilayer laminate is manufactured, for example, by laminating a second semiconductor wafer divided into individual semiconductor chips separately produced on the upper surface of the adhesive film of the laminate. be able to.

The 2nd semiconductor wafer laminated | stacked on the upper surface of the adhesive film of the said laminated body can be produced by the method similar to the tip dicing method and post dicing method mentioned above. When such a second semiconductor wafer does not have an adhesive film, the production method of the present invention 2 exhibits more superiority. It is preferable not to have.

The method of laminating the second semiconductor wafer so that the bottom surface thereof is in contact with the upper surface of the adhesive film of the laminate is not particularly limited. For example, by using an alignment mart by image recognition using a camera, an infrared camera, or the like. A method of laminating while aligning is preferably used.

Also in the manufacturing method of the present invention 2, as in the case of the manufacturing method of the present invention 1 described above, the first and second semiconductor wafers are formed with pads, bumps, through electrodes and the like. preferable.

In the production method of the present invention 2, the number of the second semiconductor wafers laminated on the upper surface of the adhesive film of the laminate is not particularly limited, but the preferred lower limit is 2 layers, and the preferred upper limit is 10 layers.
Thus, when laminating | stacking two or more layers on the upper surface of the adhesive film of the said laminated body, it is preferable that each 2nd semiconductor wafer is laminated | stacked via the adhesive film mentioned above. .

In the production method of the present invention 2, the protective film of the multilayer laminate described above is stretched in the horizontal direction to break the adhesive film.
The method of stretching the protective film of the multilayer laminate in the horizontal direction is not particularly limited, and examples thereof include the same method as the method of stretching the protective film of the laminate in the production method of the present invention 1 described above.

In the production method of the present invention 2, similarly to the production method of the present invention 1 described above, after the protective film and the adhesive film having greatly different elongation rates are laminated to each other, the protective film as the lowermost layer is stretched, The distance between the individual semiconductor chips is sufficiently widened, and at that time, the adhesive film is broken by the pulling force in the horizontal direction, and the adhesive film can be easily broken along the dividing line of the semiconductor chip. A semiconductor chip laminate can be manufactured.

The amount of the multilayer laminate to be stretched in the horizontal direction is not particularly limited, and is appropriately determined in consideration of the raw material of the adhesive film and the protective film to be used, the number of laminated layers, and the like. On the other hand, the protective film is adjusted within a range not to break.

The semiconductor chip with an adhesive layer manufactured by the manufacturing method of the present invention 1 and the semiconductor chip multilayer body manufactured by the manufacturing method of the present invention 2 are disposed on the substrate, chip, wafer, etc. via the adhesive layer. Is laminated.
As a method for laminating the semiconductor chip or the semiconductor chip multilayer body, for example, after bonding to a substrate or the like through an adhesive layer, wire bonding or the like is performed from the surface of the semiconductor chip, and cross or A method of laminating semiconductor chips in an pyramid shape via an adhesive film; after bonding to a substrate or the like via an adhesive layer, wire bonding is performed from the surface of the semiconductor chip, and an adhesive layer is embedded so as to embed the wires Further, a method of laminating semiconductor chips; a method of laminating semiconductor chips via an adhesive layer with bumps or through electrodes is preferably used.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor chip with an adhesive layer and the manufacturing method of a semiconductor chip laminated body which do not damage or produce a contamination to a semiconductor chip or a semiconductor chip laminated body can be provided. .

Hereinafter, the present invention will be described in more detail with reference to examples. However, the present invention is not limited to these examples.

Example 1
(1) Production of Semiconductor Wafer 1 An SiO film (500 nm), a Ti film (70 nm), and an Al film (1 μm) were laminated in this order on an 8-inch bare wafer. 100 μm square Al pads were formed at a 155 μm pitch on the periphery of the chip by photolithography using an i-line resist and wet etching.
The chip size was 8.6 mm, and the pad 1 was arranged at a position 0.6 mm from the outer periphery of the chip. Further, the pad 2 electrically connected to the pad 1 was disposed at a position 2 mm from the outer periphery of the chip.
On top of that, a SiN film (500 nm) was laminated, and a semiconductor wafer 1 was produced in which the SiN film on the Al pad was opened at 80 μm square. Conduction was conducted so that a pair of Al pads were shifted one by one as viewed from the back side. An Au stud bump having a diameter of 60 μm was formed on the Al pad.

(2) Fabrication of individualized semiconductor wafer 1 A groove having a width of 40 μm was formed in a scribe area of the manufactured semiconductor wafer 1 using a dicer so that the depth of cut was 100 μm. The pitch at this time was 8.6 mm. A back grind tape (Selfa BG, manufactured by Sekisui Chemical Co., Ltd.) was attached to the surface of the semiconductor wafer 2 to back grind it to a thickness of 80 μm.
As a protective film, the dicing tape “PE tape # 6318-B” (manufactured by Sekisui Chemical Co., Ltd., thickness 70 μm, base material polyethylene, adhesive rubber-based adhesive material 10 μm) is bonded to the semiconductor wafer 1 from the ground surface, and back grind tape Was peeled off.

(3) Production of adhesive film G-2050M (Nippon Yushi Co., Ltd., epoxy-containing acrylic polymer, weight average molecular weight: Mw 200,000) 15 parts by weight and EXA-7200HH (Dainippon Ink Co., Ltd., dicyclopentadiene type epoxy) 80 parts by weight, 5 parts by weight of HP-4032D (manufactured by Dainippon Ink Co., Ltd., naphthalene type epoxy), 35 parts by weight of YH-309 (manufactured by Japan Epoxy Resin Co., Ltd., acid anhydride-based curing agent), 2MAOK-PW ( 8 parts by weight of Shikoku Kasei Co., Ltd., imidazole) and 2 parts by weight of S320 (manufactured by Chisso Corp., aminosilane) are blended, and the blend is added to methyl ethyl ketone (MEK) as a solvent to a solid content of 60%. The mixture was stirred to obtain a coating solution.
This was applied to a release film and dried in an oven at 110 ° C. for 3 minutes to form an adhesive film (thickness 40 μm) on the release film.

(4) Production of Laminate and Production of Semiconductor Chip with Adhesive Layer The produced adhesive film was bonded to the surface of the singulated semiconductor wafer 1 adhered on a dicing tape to produce a laminate.
The peripheral part of the obtained dicing tape of the laminated body was fixed to a ring frame, and was extended 15 mm in the horizontal direction using a die bonder (manufactured by NEC Machinery, BESTEM-D02). Thereby, the adhesive film broke between all the semiconductor chips. By picking up individual semiconductor chips, a semiconductor chip with an adhesive layer was obtained.

(Evaluation)
Flip chip bonder: The semiconductor chip with the adhesive layer produced in Example 1 is attached to the upper surface of the semiconductor chip 2 die-bonded on the substrate using DB-100 (manufactured by Kajitani Kogyo Co., Ltd.) via the adhesive layer. And flip chip bonding. Bonding conditions were temperature: 250 ° C., load: 35 g / bump, 0.5 seconds, 50 kHz, and amplitude of 3 μm.
At this time, the pad arranged at a position of 2 mm from the outer periphery of the semiconductor chip with the adhesive layer produced in Example 1 and the Au stud bump of the semiconductor chip 2 were connected.
Thereafter, the adhesive layer is cured at 170 ° C. for 30 minutes to obtain a semiconductor chip laminate in which the semiconductor chip with the adhesive layer prepared in Example 1 and the semiconductor chip 2 are laminated through the cured adhesive film. It was.
In the obtained semiconductor chip laminated body, the bonding pads of the substrate are selected and made conductive so that the number of bumps connected between the semiconductor chip with the adhesive layer produced in Example 1 and the semiconductor chip 2 is 10. Confirmed that it is. As a result, the number of chips in which defects occurred in 25 chips was 0.

According to the present invention, there are provided a method for manufacturing a semiconductor chip with an adhesive layer and a method for manufacturing a semiconductor chip stack that do not damage or cause contamination of the semiconductor chip or the semiconductor chip stack. be able to.

Claims (5)

A method of manufacturing a semiconductor chip with an adhesive layer in which an adhesive layer is formed on the surface of the semiconductor chip, wherein the adhesive film, a semiconductor wafer divided into individual semiconductor chips, and a protective film are laminated in this order Stretching the protective film in the horizontal direction, breaking the adhesive film, and dividing into a semiconductor chip with an adhesive layer,
The laminate is
Forming a dividing groove having a predetermined depth from the surface side of the semiconductor wafer (A),
A step (B) of attaching a back grind film to the surface of the semiconductor wafer on which the dividing grooves are formed;
Grinding the back surface of the semiconductor wafer to which the back grind film is adhered, exposing the dividing grooves to divide into individual semiconductor chips (C), and
A process of pasting the back surface of the semiconductor wafer divided into individual semiconductor chips to a protective film, and then pasting an adhesive film in place of the back grind film (D)
Method for producing a contact adhesive layer-attached semiconductor chips you characterized by being produced through. The method for producing a semiconductor chip with an adhesive layer according to claim 1 , wherein the adhesive film has an elongation at break of 100 to 2000% before curing. The method for producing a semiconductor chip with an adhesive layer according to claim 1 or 2, wherein the adhesive film is a thermosetting adhesive film or a thermoplastic adhesive film. 4. The method of manufacturing a semiconductor chip with an adhesive layer according to claim 1 , wherein bumps are formed on the front surface, the back surface, or both the front and back surfaces of the semiconductor chip. A method for producing a semiconductor chip laminate in which semiconductor chips and adhesive layers are alternately laminated,
The adhesive film, the first semiconductor wafer divided into individual semiconductor chips, and the adhesive film of the laminate in which the protective film is laminated in this order on the opposite surface of the surface on which the first semiconductor wafer is laminated. Further, the adhesive film is formed by stretching the protective film of the multilayer laminate in which the second semiconductor wafer divided into individual semiconductor chips is laminated so that the bottom surface thereof is in contact with the adhesive film, in the horizontal direction. A method for producing a semiconductor chip laminate with an adhesive layer, comprising a step of breaking and dividing into a semiconductor chip laminate with an adhesive layer.