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JP4860176B2 - Method for producing Ni (PF3) 4 - Google Patents
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JP4860176B2 - Method for producing Ni (PF3) 4 - Google Patents

Method for producing Ni (PF3) 4 Download PDF

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JP4860176B2
JP4860176B2 JP2005133859A JP2005133859A JP4860176B2 JP 4860176 B2 JP4860176 B2 JP 4860176B2 JP 2005133859 A JP2005133859 A JP 2005133859A JP 2005133859 A JP2005133859 A JP 2005133859A JP 4860176 B2 JP4860176 B2 JP 4860176B2
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英明 町田
真人 石川
育世 村本
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TRI Chemical Laboratorories Inc
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Description

本発明はNi(PF34の製造方法に関する。 The present invention relates to a method for producing Ni (PF 3 ) 4 .

Ni(PF34は、Ni系金属、特に、Ni系薄膜形成用の原料として有望視されている。そして、Ni(PF34が大量に、かつ、高い収率で得られたならば、高機能、高被覆性を奏するNi系薄膜を形成する為の工業的手法に、Ni(PF34が用いられると予想される。 Ni (PF 3 ) 4 is promising as a raw material for forming Ni-based metals, particularly Ni-based thin films. If a large amount of Ni (PF 3 ) 4 is obtained in a high yield, Ni (PF 3 ) is an industrial method for forming a Ni-based thin film having high functionality and high coverage. 4 is expected to be used.

しかしながら、Ni(PF34の工業的な製法が確立されていない。
尚、実験室レベルでは、ビスシクロペンタジエニルニッケル[CNiとPF3とを反応させる手法が提案されている。
[CNi+PF3→Ni(PF34
However, an industrial production method for Ni (PF 3 ) 4 has not been established.
At the laboratory level, a method of reacting biscyclopentadienyl nickel [C 5 H 5 ] 2 Ni with PF 3 has been proposed.
[C 5 H 5 ] 2 Ni + PF 3 → Ni (PF 3 ) 4

しかしながら、この反応式で示される手法によるNi(PF34の収率は低い。例えば、数%の程度である。従って、この方法は、コストが高く付き、大量生産に適した工業的製法では無い。 However, the yield of Ni (PF 3 ) 4 by the method shown in this reaction formula is low. For example, it is about several percent. Therefore, this method is expensive and is not an industrial method suitable for mass production.

又、純度が高いNi膜を形成しようとしたならば、Ni(PF34の純度も高くなければならない。
しかしながら、上記の方法では、原料の[CNiに由来する有機物が混入している問題点が有る。
If an Ni film having a high purity is to be formed, the purity of Ni (PF 3 ) 4 must be high.
However, in the above method, there is a problem that organic substances derived from [C 5 H 5 ] 2 Ni as a raw material are mixed.

従って、本発明が解決しようとする第1の課題は、収率が高く、大量生産が可能なNi(PF34の製造方法を提供することである。 Therefore, the first problem to be solved by the present invention is to provide a method for producing Ni (PF 3 ) 4 that has a high yield and can be mass-produced.

本発明が解決しようとする第2の課題は、純度の高いNi(PF34が得られる製造方法を提供することである。 The second problem to be solved by the present invention is to provide a production method for obtaining highly pure Ni (PF 3 ) 4 .

前記の課題を解決する為の研究を鋭意押し進めて行く中に、本発明者は、アルキルシクロペンタジエニルニッケルを沸点が100℃以上の溶媒に溶かしてから、前記アルキルシクロペンタジエニルニッケルとPF3とを反応させると、収率が向上することを見出すに至った。 While eagerly pursuing research to solve the above-mentioned problems, the present inventor has dissolved alkylcyclopentadienyl nickel in a solvent having a boiling point of 100 ° C. or higher, and then has said alkylcyclopentadienyl nickel and PF. The reaction with 3 led to the finding that the yield was improved.

そして、更なる研究を続行して行った結果、炭化水素に代表される無極性溶媒を用いると、シクロペンタジエニルニッケル[CNiに由来する有機物の混入が極めて少ないことがも判って来た。 As a result of continuing further research, when nonpolar solvents such as hydrocarbons are used, organic substances derived from cyclopentadienylnickel [C 5 H 5 ] 2 Ni are very rarely mixed. I understand.

更には、有機系の不純物を含む粗製Ni(PF34を炭化水素に代表される無極性溶媒によって洗浄することによって、有機不純物が除去できることも判って来た。 Furthermore, it has been found that organic impurities can be removed by washing crude Ni (PF 3 ) 4 containing organic impurities with a nonpolar solvent typified by hydrocarbon.

このような知見を基にして本発明が達成されたものである。
すなわち、前記の課題は、Ni(PF34の製造方法であって、
下記の一般式[I]で表される化合物の群の中から選ばれる一つ又は二つ以上の化合物と、沸点が100℃以上の溶媒とを混合する混合工程と、
前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程と、
前記反応工程の後、生成したNi(PF34を単離する単離工程
とを具備することを特徴とするNi(PF34の製造方法によって解決される。
一般式[I]
[(R)5−nNi
(但し、RはH又は炭化水素基であって、nは0〜5の整数である。二つ以上のRが有る場合、全てのRは同一でも、異なっていても良い。)
The present invention has been achieved based on such knowledge.
That is, the subject is a method for producing Ni (PF 3 ) 4 ,
A mixing step of mixing one or two or more compounds selected from the group of compounds represented by the following general formula [I] with a solvent having a boiling point of 100 ° C. or higher;
A reaction step of mixing and reacting the mixture and PF 3 after the mixing step;
After the reaction step, is solved generated Ni a (PF 3) 4 by the manufacturing method of Ni (PF 3) 4, characterized in that comprises the isolation step of isolating.
Formula [I]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is H or a hydrocarbon group, and n is an integer of 0 to 5. When there are two or more Rs, all Rs may be the same or different.)

特に、Ni(PF34の製造方法であって、
下記の一般式[Ia]で表される化合物の群の中から選ばれる一つ又は二つ以上の化合物と、沸点が100℃以上の溶媒とを混合する混合工程と、
前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程と、
前記反応工程の後、生成したNi(PF34を単離する単離工程
とを具備することを特徴とするNi(PF34の製造方法によって解決される。
一般式[Ia]
[(R)5−nNi
(但し、RはH又はアルキル基であって、nは0〜5の整数である。二つ以上のRが有る場合、全てのRは同一でも、異なっていても良い。)
In particular, a method for producing Ni (PF 3 ) 4 , comprising:
A mixing step of mixing one or two or more compounds selected from the group of compounds represented by the following general formula [Ia] with a solvent having a boiling point of 100 ° C. or higher;
A reaction step of mixing and reacting the mixture and PF 3 after the mixing step;
After the reaction step, is solved generated Ni a (PF 3) 4 by the manufacturing method of Ni (PF 3) 4, characterized in that comprises the isolation step of isolating.
Formula [Ia]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is H or an alkyl group, and n is an integer of 0 to 5. When there are two or more Rs, all Rs may be the same or different.)

更には、Ni(PF34の製造方法であって、
下記の一般式[Ib]で表される化合物の群の中から選ばれる一つ又は二つ以上の化合物と、沸点が100℃以上の溶媒とを混合する混合工程と、
前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程と、
前記反応工程の後、生成したNi(PF34を単離する単離工程
とを具備することを特徴とするNi(PF34の製造方法によって解決される。
一般式[Ib]
[(R)5−nNi
(但し、RはH又はアルキル基であって、nは0又は1である。)
Furthermore, a method for producing Ni (PF 3 ) 4 , comprising:
A mixing step of mixing one or two or more compounds selected from the group of compounds represented by the following general formula [Ib] with a solvent having a boiling point of 100 ° C. or higher;
A reaction step of mixing and reacting the mixture and PF 3 after the mixing step;
After the reaction step, is solved generated Ni a (PF 3) 4 by the manufacturing method of Ni (PF 3) 4, characterized in that comprises the isolation step of isolating.
Formula [Ib]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is H or an alkyl group, and n is 0 or 1.)

特に、Ni(PF34の製造方法であって、
下記の一般式[Ic]で表される化合物の群の中から選ばれる一つ又は二つ以上の化合物と、沸点が100℃以上の溶媒とを混合する混合工程と、
前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程と、
前記反応工程の後、生成したNi(PF34を単離する単離工程
とを具備することを特徴とするNi(PF34の製造方法によって解決される。
一般式[Ic]
[(R)5−nNi
(但し、RはH又は炭素数が7以下のアルキル基であって、nは0又は1である。)
In particular, a method for producing Ni (PF 3 ) 4 , comprising:
A mixing step of mixing one or two or more compounds selected from the group of compounds represented by the following general formula [Ic] with a solvent having a boiling point of 100 ° C. or higher;
A reaction step of mixing and reacting the mixture and PF 3 after the mixing step;
After the reaction step, is solved generated Ni a (PF 3) 4 by the manufacturing method of Ni (PF 3) 4, characterized in that comprises the isolation step of isolating.
Formula [Ic]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is H or an alkyl group having 7 or less carbon atoms, and n is 0 or 1.)

上記本発明において、[(R)5−nNiの中でも、[CNi,[(CH)CNi,[(C)CNi,[(i−C)CNi,[(n−C)CNiが特に好ましいものである。 In the present invention, among the [(R) n C 5 H 5-n] 2 Ni, [C 5 H 5] 2 Ni, [(CH 3) C 5 H 4] 2 Ni, [(C 2 H 5 ) C 5 H 4] 2 Ni , is [(i-C 3 H 7 ) C 5 H 4] 2 Ni, [(n-C 4 H 9) C 5 H 4] 2 that Ni is particularly preferred.

上記本発明において、溶媒は無極性溶媒が好ましい。中でも、ノナン、デカン、ウンデカン、ドデカン、トリデカン、テトラデカン、ペンタデカン、ヘキサデカンの群の中から選ばれる一つ又は二つ以上の化合物(溶媒)が好ましい。   In the present invention, the solvent is preferably a nonpolar solvent. Among these, one or more compounds (solvents) selected from the group consisting of nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, and hexadecane are preferable.

上記本発明において、単離工程は、常圧蒸留または減圧蒸留によって行われる。このような蒸留操作によって、Ni(PF34と、溶媒、原料、及び反応副生物とが効率良く分離される。 In the present invention, the isolation step is performed by atmospheric distillation or vacuum distillation. By such a distillation operation, Ni (PF 3 ) 4 is efficiently separated from the solvent, the raw material, and the reaction by-product.

本発明にあっては、上記単離工程(蒸留工程)に先立って、沸点が100℃以上の無極性溶媒で粗製Ni(PF34を分別しておくことが好ましい。すなわち、沸点が100℃以上の無極性溶媒で粗製Ni(PF34を洗浄することによって、Ni(PF34と、溶媒、原料、及び反応副生物とが分離される。従って、このような分別操作を行うことによって、その後の蒸留・精製が効率良く行われる。 In the present invention, prior to the isolation step (distillation step), it is preferable to separate crude Ni (PF 3 ) 4 with a nonpolar solvent having a boiling point of 100 ° C. or higher. That is, by washing crude Ni (PF 3 ) 4 with a nonpolar solvent having a boiling point of 100 ° C. or higher, Ni (PF 3 ) 4 is separated from the solvent, raw materials, and reaction byproducts. Therefore, by performing such a fractionation operation, subsequent distillation and purification can be performed efficiently.

本発明にあっては、反応工程と単離工程とは同時に平行して行われることが好ましい。すなわち、斯くの如くすることにより、単離工程後の未反応PF3を反応工程に循環供給することが出来、原料の効率的な使用が可能になる。 In the present invention, it is preferable that the reaction step and the isolation step are performed simultaneously in parallel. That is, by doing so, the unreacted PF 3 after the isolation step can be circulated and supplied to the reaction step, and the raw materials can be used efficiently.

Ni(PF34が高収率で得られる。そして、大量に、かつ、簡単に、しかも低廉なコストで得られる。更には、純度の高いNi(PF34が得られる。 Ni (PF 3 ) 4 is obtained in high yield. And it can be obtained in large quantities, easily and at a low cost. Furthermore, highly pure Ni (PF 3 ) 4 is obtained.

本発明は、Ni(PF34の製造方法である。そして、下記の一般式[I]で表される化合物と、1気圧下での沸点が100℃以上の溶媒とを混合する混合工程を有する。かつ、前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程を有する。更に、前記反応工程の後、生成したNi(PF34を単離する単離工程を有する。
一般式[I]
[(R)5−nNi
(但し、Rは水素または炭化水素基であって、nは0〜5の整数である。二つ以上のRが有る場合、全てのRは同一でも、異なっていても良い。)
The present invention is a method for producing Ni (PF 3 ) 4 . And it has the mixing process which mixes the compound represented with the following general formula [I], and the solvent whose boiling point under 1 atmosphere is 100 degreeC or more. And, after the mixing step, mixing the mixture with PF 3, having a reaction step of reacting. Further, after the reaction step, with the resulting Ni (PF 3) 4 the isolation step of isolating.
Formula [I]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is hydrogen or a hydrocarbon group, and n is an integer of 0 to 5. When there are two or more Rs, all Rs may be the same or different.)

上記一般式において、Rがアルキル基(中でも、炭素数が7以下のアルキル基)の化合物が好ましい。nは0又は1の化合物が好ましい。これらの化合物の中でも、特に好ましい化合物は次の化合物である。[CNi,[(CH)CNi,[(C)CNi,[(i−C)CNi,[(n−C)CNi。 In the above general formula, a compound in which R is an alkyl group (in particular, an alkyl group having 7 or less carbon atoms) is preferable. n is preferably a compound of 0 or 1. Among these compounds, particularly preferred compounds are the following compounds. [C 5 H 5] 2 Ni , [(CH 3) C 5 H 4] 2 Ni, [(C 2 H 5) C 5 H 4] 2 Ni, [(i-C 3 H 7) C 5 H 4 ] 2 Ni, [(n- C 4 H 9) C 5 H 4] 2 Ni.

本発明で用いられる溶媒は、沸点が100℃以上のものであるが、好ましくは沸点が110℃以上のものである。更には沸点が123℃以上のものである。特に、沸点が135℃以上、中でも140℃以上のものである。沸点の上限には格別な制約は無く、即ち、常圧下において液体であれば良が、通常では、400℃以下である。
又、本発明で用いられる好ましい溶媒は無極性溶媒である。
そして、本発明で用いられる溶媒として中でも好ましい溶媒は次の化合物である。ノナン、デカン、ウンデカン、ドデカン、トリデカン、テトラデカン、ペンタデカン、ヘキサデカン。
The solvent used in the present invention has a boiling point of 100 ° C. or higher, but preferably has a boiling point of 110 ° C. or higher. Further, the boiling point is 123 ° C. or higher. In particular, it has a boiling point of 135 ° C. or higher, particularly 140 ° C. or higher. There is no particular restriction on the upper limit of the boiling point, that is, it can be a liquid under normal pressure, but is usually 400 ° C. or lower.
The preferred solvent used in the present invention is a nonpolar solvent.
Among the solvents used in the present invention, preferred solvents are the following compounds. Nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, hexadecane.

本発明の単離工程は、常圧蒸留または減圧蒸留によって行われる。
本発明にあっては、上記単離工程(蒸留工程)に先立って、沸点が100℃以上の無極性溶媒で粗製Ni(PF34の分別が行われる。すなわち、1気圧下での沸点が100℃以上の無極性溶媒で粗製Ni(PF34を洗浄することによって、Ni(PF34と、溶媒、原料、及び反応副生物とが分離される。
The isolation step of the present invention is performed by atmospheric distillation or vacuum distillation.
In the present invention, prior to the isolation step (distillation step), fractionation of crude Ni (PF 3 ) 4 is performed with a nonpolar solvent having a boiling point of 100 ° C. or higher. That is, by washing crude Ni (PF 3 ) 4 with a nonpolar solvent having a boiling point of 100 ° C. or higher under 1 atm, Ni (PF 3 ) 4 is separated from the solvent, raw material, and reaction by-product. The

本発明にあっては、反応工程と単離工程とは同時に平行して行われる。すなわち、斯くの如くすることにより、単離工程後の未反応PF3を反応工程に循環供給することが出来、原料の効率的な使用が可能になる。 In the present invention, the reaction step and the isolation step are simultaneously performed in parallel. That is, by doing so, the unreacted PF 3 after the isolation step can be circulated and supplied to the reaction step, and the raw materials can be used efficiently.

以下、具体的な実施例を挙げて説明する。
[実施例1]
図1はNi(PF4製造装置の概略図である。同図中、1はPFボンベ、2はアルキルシクロペンタジエニルニッケルと溶媒との混合液、3はPFの吹き込み口、4は撹拌子、5は反応温度調節器、6は冷却器、7はNi(PF34捕集用冷却トラップ、8はPF回収用冷却トラップ、9は圧力調節器である。
そして、図1の装置を用いてNi(PF34の製造が行われた。尚、製造は全て窒素雰囲気下で行われた。
Hereinafter, specific examples will be described.
[Example 1]
FIG. 1 is a schematic view of a Ni (PF 3 ) 4 manufacturing apparatus. In the figure, 1 is a PF 3 cylinder, 2 is a mixture of an alkylcyclopentadienyl nickel and a solvent, 3 is a PF 3 inlet, 4 is a stirrer, 5 is a reaction temperature controller, 6 is a cooler, 7 is a cooling trap for collecting Ni (PF 3 ) 4 , 8 is a cooling trap for recovering PF 3 , and 9 is a pressure regulator.
Then, the production of Ni (PF 3) 4 using the apparatus of FIG. 1 were made. All the production was performed under a nitrogen atmosphere.

先ず、脱水・脱気されたテトラデカン800ml中に、ビスシクロペンタジエニルニッケル[CNiの95g(0.5mol)を一部溶解、一部分散させ、撹拌しながら90℃に保った。 First, 95 g (0.5 mol) of biscyclopentadienyl nickel [C 5 H 5 ] 2 Ni is partially dissolved and partially dispersed in 800 ml of dehydrated and degassed tetradecane, and kept at 90 ° C. with stirring. It was.

そして、装置内を負圧にした後、反応系内圧力が大気圧近傍になるまでPFガスを混合液中に吹き込んだ。暫くすると、PFは反応によって消費され、系内の圧力は再び負圧になった。 Then, after the inside of the apparatus to a negative pressure was blown PF 3 gas in the mixture until the reaction system internal pressure is near atmospheric pressure. After a while, PF 3 was consumed by the reaction, and the pressure in the system became negative again.

そこで、反応系内圧力が大気圧近傍になるまで、再度、PFガスを混合液中に吹き込んだ。このような過程を数回繰り返して行った。 Therefore, PF 3 gas was blown into the mixed solution again until the internal pressure of the reaction system became close to atmospheric pressure. Such a process was repeated several times.

この後、反応容器を室温まで冷却した。そして、系内を圧力調整装置9によって減圧した。減圧蒸留されたNi(PF34は、捕集用冷却トラップ7によって捕集された。又、PFが冷却トラップ8によって回収された。この回収されたPFを、ボンベ1に供給し、再使用した。そして、[CNiが消費されるまで同じ操作を行った。 After this, the reaction vessel was cooled to room temperature. The system was depressurized by the pressure adjusting device 9. Ni (PF 3 ) 4 distilled under reduced pressure was collected by a cooling trap 7 for collection. Further, PF 3 was recovered by the cooling trap 8. The recovered PF 3 was supplied to the cylinder 1 and reused. Then, the same operation was performed until [C 5 H 5 ] 2 Ni was consumed.

捕集されたNi(PF34を分液ロートに移し、これにテトラデカンを入れた。そうすると、上層(テトラデカン層)と下層(Ni(PF34)とに分かれた。 The collected Ni (PF 3 ) 4 was transferred to a separatory funnel, and tetradecane was added thereto. Then, it was divided into an upper layer (tetradecane layer) and a lower layer (Ni (PF 3 ) 4 ).

下層をテトラデカンによって5回洗浄した。
洗浄後、常圧蒸留装置により精製した。
The lower layer was washed 5 times with tetradecane.
After washing, the product was purified by an atmospheric distillation device.

この精製物の沸点は68℃であった。又、この精製物を燃焼−赤外線吸収法に提供した処、Cは検出されなかった。尚、検出精度を考慮すると、Cは含まれていても、0.01wt%以下である。
そして、本実施例での収量は165.8gであった。従って、収率は81%である。
The boiling point of this purified product was 68 ° C. In addition, C was not detected when this purified product was provided to the combustion-infrared absorption method. In consideration of detection accuracy, even if C is included, it is 0.01 wt% or less.
The yield in this example was 165.8 g. Therefore, the yield is 81%.

このようにして得られたNi(PF34を用いて化学気層成長方法によりニッケル薄膜を作成した。そして、このようにして得られたNi膜をSIMS分析によって分析した処、Cは検出されなかった。又、このNi膜の比抵抗を調べた処、13μΩ・cmであった。 A nickel thin film was prepared by the chemical vapor deposition method using Ni (PF 3 ) 4 thus obtained. When the Ni film thus obtained was analyzed by SIMS analysis, C was not detected. Further, when the specific resistance of this Ni film was examined, it was 13 μΩ · cm.

[実施例2]
実施例1において、[CNiの代わりに、[(CH)CNiを用い、同様に行った。
その結果、実施例1と同様な結果が得られた。
[Example 2]
In Example 1, instead of [C 5 H 5 ] 2 Ni, [(CH 3 ) C 5 H 4 ] 2 Ni was used in the same manner.
As a result, the same result as in Example 1 was obtained.

[実施例3]
実施例1において、[CNiの代わりに、[(C)CNiを用い、同様に行った。
その結果、実施例1と同様な結果が得られた。
[Example 3]
In Example 1, instead of [C 5 H 5 ] 2 Ni, [(C 2 H 5 ) C 5 H 4 ] 2 Ni was used in the same manner.
As a result, the same result as in Example 1 was obtained.

[実施例4]
実施例1において、[CNiの代わりに、[(i−C)CNiを用い、同様に行った。
その結果、実施例1と同様な結果が得られた。
[Example 4]
In Example 1, in place of the [C 5 H 5] 2 Ni , using the [(i-C 3 H 7 ) C 5 H 4] 2 Ni, it was the same.
As a result, the same result as in Example 1 was obtained.

[実施例5]
実施例1において、[CNiの代わりに、[(n−C)CNiを用い、同様に行った。
その結果、実施例1と同様な結果が得られた。
[Example 5]
In Example 1, instead of [C 5 H 5 ] 2 Ni, [(n—C 4 H 9 ) C 5 H 4 ] 2 Ni was used in the same manner.
As a result, the same result as in Example 1 was obtained.

[実施例6〜13]
実施例1において、テトラデカンの代わりに、ノナン、デカン、ウンデカン、ドデカン、トリデカン、ペンタデカン、ヘキサデカンを用い、同様に行った。
その結果、実施例1と同様な結果が得られた。
[Examples 6 to 13]
In Example 1, in place of tetradecane, nonane, decane, undecane, dodecane, tridecane, pentadecane, and hexadecane were used in the same manner.
As a result, the same result as in Example 1 was obtained.

[比較例1]
実施例1において、テトラデカンの代わりに、ジエチルエーテル(沸点34.6℃)を用い、同様に行った。
得られたNi(PF34の収率は10%であった。
又、本比較例で得たNi(PF34を用いて化学気層成長方法によりニッケル薄膜を作成した。そして、このようにして得られたNi膜をSIMS分析によって分析した処、4%程度のCが検出された。又、本比較例のNi膜は、実施例1のNi膜に比べて純度が劣ることから、その比抵抗も実施例1のものに比べて劣るものであった。
[Comparative Example 1]
In Example 1, diethyl ether (boiling point: 34.6 ° C.) was used in the same manner instead of tetradecane.
The yield of the obtained Ni (PF 3 ) 4 was 10%.
Further, a nickel thin film was prepared by the chemical vapor deposition method using Ni (PF 3 ) 4 obtained in this comparative example. When the Ni film thus obtained was analyzed by SIMS analysis, about 4% of C was detected. Further, since the Ni film of this comparative example was inferior in purity as compared with the Ni film of Example 1, its specific resistance was also inferior to that of Example 1.

[比較例2]
実施例1において、テトラデカンの代わりに、ヘプタン(沸点98℃)を用い、同様に行った。
しかしながら、溶媒との分離は困難であり、純粋なNi(PF34は得られなかった。
[Comparative Example 2]
In Example 1, heptane (boiling point 98 ° C.) was used in the same manner instead of tetradecane.
However, separation from the solvent was difficult, and pure Ni (PF 3 ) 4 could not be obtained.

Ni(PF製造装置の概略図Schematic of Ni (PF 3 ) 4 manufacturing equipment

符号の説明Explanation of symbols

1 PFボンベ
2 [CNiとテトラデカンとの混合溶液
3 PF吹き込み口
4 撹拌子
5 反応温度調節器
6 冷却器
7 Ni(PF34捕集用冷却トラップ
8 PF回収用冷却トラップ
9 圧力調節器
代 理 人 宇 高 克 己
1 PF 3 cylinder 2 [C 5 H 5 ] 2 Mixed solution of Ni and tetradecane 3 PF 3 inlet 4 Stirrer 5 Reaction temperature controller 6 Cooler 7 Ni (PF 3 ) 4 Cooling trap 8 PF 3 for collection Cooling trap 9 for recovery Pressure regulator
Representative Katsumi Udaka

Claims (5)

Ni(PF34の製造方法であって、
下記の一般式[I]で表される化合物の群の中から選ばれる一つ又は二つ以上の化合物と、沸点が123℃〜400℃の無極性溶媒とを混合する混合工程と、
前記混合工程の後、該混合物とPF3とを混合し、反応させる反応工程と、
前記反応工程の後、沸点が123℃〜400℃の無極性溶媒で粗製Ni(PF34を分別する分別工程と、
前記分別工程の後、常圧または減圧蒸留による蒸留工程
とを具備することを特徴とするNi(PF34の製造方法。
一般式[I]
[(R)5−nNi
(但し、RはH又は炭化水素基であって、nは0〜5の整数である。二つ以上のRが有る場合、全てのRは同一でも、異なっていても良い。)
A method for producing Ni (PF 3 ) 4 , comprising:
A mixing step of mixing one or two or more compounds selected from the group of compounds represented by the following general formula [I] with a nonpolar solvent having a boiling point of 123 ° C. to 400 ° C .;
A reaction step of mixing and reacting the mixture and PF 3 after the mixing step;
A fractionation step of fractionating crude Ni (PF 3 ) 4 with a nonpolar solvent having a boiling point of 123 ° C. to 400 ° C. after the reaction step;
A method for producing Ni (PF 3 ) 4 comprising a distillation step by atmospheric pressure or vacuum distillation after the fractionation step.
Formula [I]
[(R) n C 5 H 5-n ] 2 Ni
(However, R is H or a hydrocarbon group, and n is an integer of 0 to 5. When there are two or more Rs, all Rs may be the same or different.)
一般式[I]で表される化合物が、[CNi,[(CH)CNi,[(C)CNi,[(i−C)CNi,[(n−C)CNiである
ことを特徴とする請求項1のNi(PF34の製造方法。
The compound represented by the general formula [I] is [C 5 H 5 ] 2 Ni, [(CH 3 ) C 5 H 4 ] 2 Ni, [(C 2 H 5 ) C 5 H 4 ] 2 Ni, [ Ni (PF 3 ) 4 according to claim 1, characterized in that it is (i-C 3 H 7 ) C 5 H 4 ] 2 Ni, [(n-C 4 H 9 ) C 5 H 4 ] 2 Ni. Production method.
分別工程は無極性溶媒による洗浄工程を具備する
ことを特徴とする請求項1のNi(PF34の製造方法。
The method for producing Ni (PF 3 ) 4 according to claim 1, wherein the fractionation step comprises a washing step with a nonpolar solvent.
溶媒は、ノナン、デカン、ウンデカン、ドデカン、トリデカン、テトラデカン、ペンタデカン、ヘキサデカンの群の中から選ばれる一つ又は二つ以上の化合物である
ことを特徴とする請求項1〜請求項3いずれかのNi(PF34の製造方法。
The solvent is one or two or more compounds selected from the group consisting of nonane, decane, undecane, dodecane, tridecane, tetradecane, pentadecane, and hexadecane. A method for producing Ni (PF 3 ) 4 .
未反応PF3を反応工程に供給する
ことを特徴とする請求項1〜請求項4いずれかのNi(PF34の製造方法。
The method for producing Ni (PF 3 ) 4 according to any one of claims 1 to 4, wherein unreacted PF 3 is supplied to the reaction step.
JP2005133859A 2005-05-02 2005-05-02 Method for producing Ni (PF3) 4 Expired - Lifetime JP4860176B2 (en)

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