JP4865192B2 - Semiconductor fixing adhesive tape - Google Patents

Description

  The present invention relates to an adhesive tape for fixing a semiconductor having antistatic performance, and more particularly to an adhesive tape for dicing and backgrinding having antistatic performance, which is used when producing electrical, electronic and semiconductor parts.

  2. Description of the Related Art Conventionally, pressure-sensitive adhesive tapes for fixing and protecting parts in a dicing process and other processes when producing electrical, electronic parts, and semiconductor parts are known. As such an adhesive tape, a base film provided with a re-peelable acrylic adhesive layer, or a photocrosslinking type that has strong resistance to external force when applied but can be peeled with a small force when peeled Some are provided with a releasable pressure-sensitive adhesive layer. The pressure-sensitive adhesive tape is peeled off when a predetermined processing step is completed. At this time, static electricity called peeling charging is generated between the component and the pressure-sensitive adhesive tape. In order to suppress the adverse effect of this static electricity on the adherend (such as a circuit), an adhesive tape having an antistatic treatment on the back side of the substrate film, an adhesive tape in which an antistatic agent is added to the adhesive layer, and a substrate An adhesive tape having an antistatic intermediate layer formed between a film and an adhesive layer is used.

However, when the substrate of the component forming the circuit is an insulating material such as ceramics or glass, the amount of static electricity generated is large and it takes time to attenuate. Even if the adhesive tape is used for such a part, the antistatic effect is not sufficient, and there is a great risk of the circuit being destroyed. For this reason, in the production process of the above parts, for example, it is a fact that a static eliminating device such as an ionizer is further installed in the surrounding environment.
However, the measures described above do not provide a sufficient antistatic effect, have low productivity, and do not have sufficient circuit protection.

  Moreover, it is thought that it is effective to perform the process for preventing the peeling electrification of an adhesive tape not to the base film side but to the adhesive side. However, if an antistatic material such as a surfactant, conductive filler, or carbon black is added to the adhesive, it is difficult to adjust or suppress the physical properties of the adhesive and its change over time. The agent or the added material itself may move to the adherend and be contaminated. In this case, visible adhesive residue, microscopic level particulate matter, or liquid matter that cannot be observed optically occurs on the surface of the adherend, and adverse effects such as poor adhesion of parts in subsequent processes. Effect.

In addition, a semiconductor wafer protective member is known in which a conductive layer containing a charge transfer complex such as tetracyanoquinodimethane (TCNQ) is provided between the adhesive layer and the base film or on the back of the base film (Patent Document). 1). However, coating on the back side of the base material is difficult to develop on dicing tape because the coating film is easy to drop off during expansion, and aromatic charge transfer complexes such as TCNQ are extremely expensive materials and widen the range of use. Therefore, it is not always satisfactory from the viewpoint of further cost reduction of the material.
Japanese Patent Laid-Open No. 5-166692

  In addition, as a method for solving these, an adhesive tape has been developed in which an antistatic layer mainly composed of a charge transfer complex or the like is provided between the adhesive and the base film, but when the adhesive layer becomes thicker, For example, when it exceeds 30 μm, the electrical resistance of the pressure-sensitive adhesive layer is high, and it becomes difficult to obtain sufficient antistatic performance. In the backgrinding tape, the thickness of the paste tends to increase due to the necessity to follow the circuit surface having unevenness and the electrode shape, and it has become more difficult to prevent antistatic. Further, in the dicing tape, it is required to increase the thickness of the glue layer in order to cope with the warpage of the adherend package. In particular, when a UV curable pressure-sensitive adhesive layer is used, a significant decrease in antistatic performance after UV curing is a problem.

  The present invention provides a low-cost adhesive tape for fixing semiconductors that has little contamination with adherends and changes in adhesive properties over time, high antistatic performance, and low impact on the circuit surface even during dicing and backgrinding of semiconductor components. The purpose is to do.

As a result of intensive studies to achieve the above object, the present inventors have constituted a pressure-sensitive adhesive layer from a plurality of layers, and by providing an antistatic layer in the specific intermediate layer, It has been found that an antistatic function can be imparted without causing deterioration in reliability due to contamination of the adherend or changes in adhesive properties over time, and the present invention has been made based on this finding.
That is, the present invention is (1) a semiconductor fixing pressure-sensitive adhesive tape comprising a base film and a pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer is composed of at least three layers, and the second layer from the outermost layer is antistatic. A fixing tape for fixing a semiconductor, wherein the outermost layer has a thickness of 10 μm or less, and
(2) The antistatic layer contains a charge transfer complex, (1) the adhesive tape for fixing a semiconductor according to (1), and
(3) The adhesive tape for fixing a semiconductor according to (2 ), wherein the charge transfer complex is a charge transfer boron polymer having a nitrogen atom-boron atom complex structure, and
(4) The pressure-sensitive adhesive tape for fixing a semiconductor according to any one of (1) to (3), wherein the outermost pressure-sensitive adhesive layer comprises a radiation-curable pressure-sensitive adhesive.
Is to provide.

  The pressure-sensitive adhesive tape of the present invention can be obtained at a low cost, has little contamination over the surface of the adherend and changes in physical properties of the pressure-sensitive adhesive, and has high antistatic performance after UV irradiation. In the dicing and back grinding processing of semiconductor parts, there is little influence on the circuit surface, the range of use is expanded, and it is effective in preventing the reduction in the manufacturing yield of semiconductor products. Moreover, what employ | adopted the radiation curing type polymer for the adhesive layer is easy to peel again.

A preferred embodiment of the adhesive tape for fixing a semiconductor according to the present invention will be described in detail. The base film used for the adhesive tape for fixing a semiconductor including the antistatic layer of the present invention is important for protection from impact when processing a semiconductor, water resistance against water washing, and the like. Accordingly, as the base film, polyolefins such as polyethylene, polypropylene and polybutene, ethylene-vinyl acetate copolymers, ethylene- (meth) acrylic acid copolymers and ethylene- (meth) acrylic acid ester copolymers are used. Preferred are polymer materials such as ethylene copolymer, soft polyvinyl chloride, semi-rigid polyvinyl chloride, polyester, polyurethane, polyamide, polyimide, natural rubber and synthetic rubber. And these single layer films or multilayer films are used. The substrate film is preferably visible light transmissive, and particularly preferably ultraviolet transmissive.
The thickness of the base film is not particularly limited, but is preferably 10 to 500 μm, more preferably 40 to 500 μm, and particularly preferably 100 to 250 μm.

  The charge transfer complex used in the antistatic layer of the present invention is not particularly limited, but considering the performance / cost ratio, a charge transfer boron polymer having a nitrogen atom-boron atom complex structure is preferable. Examples of the charge transfer boron polymer include a tertiary amine compound, or a polyamino compound having basic nitrogen in the main chain and / or side chain, and a semipolar organic boron having an atomic group represented by the following general formula [I] Examples thereof include those obtained by reacting a polymer containing a compound as a constituent component (see JP-A-5-19413 and JP-A-6-126904).

[In the formula, R ₁ , R ₂ , R ₃ and R ₄ may be the same or different and each represents hydrogen, a lower alkyl group, a lower alkoxyl group or a lower alkoxy lower alkyl group, and n is 0 or 1 It is. ]

A polymer containing a semipolar organic boron compound having an atomic group represented by the general formula [I] as a constituent component can be produced, for example, by the following method (a) or (b).
The molecular weight (or degree of polymerization) of the obtained semipolar organic boron polymer is not particularly limited, but is preferably 3000 to 100,000, more preferably 3500 to 70000.
(A) Method: 1 mol of boric acid or a boric acid triester of a lower alcohol having 4 or less carbon atoms with respect to 1 mol of one or more of the compounds represented by the following general formula [II] Alternatively, the triester reaction is carried out by reacting boric anhydride with 0.5 mol.

[Wherein q is 0 or 1, and when q = 1, A represents a-(X) a- (Y) b- (Z) c- group. Where X and Z each represents an oxygen-containing hydrocarbon group having one terminal ether residue and having 100 or less carbon atoms, Y is —O—CO—R—CO— (where R is 1 carbon atom) -82, preferably 6-82 hydrocarbon group) or -O-CO-NH-R'-NH-CO- (wherein R 'is a carbon atom having 1-20 carbon atoms, preferably 5-15 carbon atoms). Represents a hydrogen group). a, b and c are each 0 or 1]

(B) Method: Poly (diol) having a di (glycerin) -borate or a diol having a di (glycerin) -borate residue in the middle of 206 or less, preferably 10 to 100 carbon atoms. The etherification reaction is carried out, or one or two or more of them is a dicarboxylic acid having 3 to 84, preferably 8 to 84 carbon atoms (hereinafter referred to as a predetermined dicarboxylic acid) with respect to 1 mol in total. Or an ester of a lower alcohol having 4 or less carbon atoms and a predetermined dicarboxylic acid, a halide of a predetermined dicarboxylic acid, or a diisocyanate having 4 to 15 carbon atoms, preferably 8 to 15 carbon atoms (hereinafter referred to as a predetermined diisocyanate). 1 type or 2 types or more are reacted for a total of 1 mol.

  A typical example of the obtained semipolar organic boron polymer is represented by the following formula.

  One or more of the semipolar organic boron polymers thus produced (hereinafter referred to as predetermined semipolar organic boron polymers) and 5 to 82 carbon atoms having at least one hydroxyl group, preferably One or more of 5 to 30 tertiary amines (hereinafter referred to as predetermined tertiary amines), or a polyamino compound having basic nitrogen in the main chain and / or side chain, boron In a ratio of 1 atom to 1 basic nitrogen atom, charged in a closed or open reactor and allowed to react at 20 to 200 ° C., preferably 50 to 150 ° C. under normal pressure. The antistatic agent used in the present invention (hereinafter referred to as a predetermined charge transfer boron polymer) is produced. In that case, when a polar solvent such as alcohol, ether, or ketone coexists, the reaction can be carried out more easily.

  Although the mechanism of action of this antistatic agent is not clear, as shown in the following formula, an ion pair is formed by combining a semipolar bond portion of a semipolar organoboron compound with basic nitrogen, and the generated acidic protons. Exhibits a resonant structure by moving in a form that leaves bonding on both the boron side and the nitrogen side, causing multiple electron movements in the insulator material in contact with it, giving a Fermi level, a semiconductor type It seems to be a driving force that can be converted to one that shows the electrical characteristics of.

  The raw materials for deriving the predetermined charge transfer boron polymer used in the present invention and the predetermined semipolar organic boron polymer as an intermediate thereof are as follows. First, as a compound represented by the general formula [II] which is a raw material of the method (a) for deriving a predetermined semipolar organic boron polymer, for example, diglycerin, di (glycerin) -malonate, di (glycerin) -maleate , Di (glycerin) -adipate, di (glycerin) -terephthalate, di (glycerin) -dodecanate, poly (9 mol) oxyethylene-di (glycerin ether), di (glycerin) -tolylene dicarbamate, di (glycerin) -Methylenebis (4-phenylcarbamate) and the like can be mentioned.

  On the other hand, as the predetermined dicarboxylic acid in the method (b), for example, dimer acid derived from malonic acid, maleic acid, succinic acid, adipic acid, sebacic acid, phthalic acid, terephthalic acid, dodecane diacid, linoleic acid , Dodecylmaleic acid, dodecenylmaleic acid, octadecylmaleic acid, octadecenylmaleic acid, maleic acid linked with a polybutenyl group having an average polymerization degree of 20 and the like, and as a predetermined diisocyanate Examples include ethylene diisocyanate, hexamethylene diisocyanate, tolylene diisocyanate, and methylene bis (4-phenyl isocyanate).

  Next, as the predetermined tertiary amine to be reacted with the predetermined semipolar organic boron polymer, for example, diethyl-hydroxymethylamine, dimethyl-2-hydroxypropylamine, methyl-di (2-hydroxyethyl) amine, tri ( 2-hydroxyethyl) amine, hydroxymethyl-di (2-hydroxyethyl) amine, dibenzyl-2-hydroxypropylamine, cyclohexyl-di (2-hydroxyethyl) amine, di (hexadecyl) amine ethylene oxide (1-25 mol) ) Adduct, and propylene oxide (1-26 mol) adduct of monobutylamine.

  In the present invention, the antistatic agent may be laminated with a binder resin made of an organic polymer that is soluble or dispersible in a solvent, but an acrylic copolymer resin having a high affinity with an adhesive is convenient. Is good. Moreover, you may contain additives, such as a coloring agent, an antiblocking agent, a crosslinking agent, antioxidant, a ultraviolet-ray inhibitor, and a lubricant which consists of inorganic or organic fine particles, as needed.

The semiconductor fixing tape of the present invention has, on one side thereof, an adhesive layer obtained by applying an acrylic adhesive or the like or a solution thereof and drying it after application.
As the pressure-sensitive adhesive base polymer, a conventional one can be used, but in the case of an acrylic pressure-sensitive adhesive, specifically, it was selected from a homopolymer and a copolymer having an acrylate ester as a main constituent monomer unit. Acrylic polymers and copolymers with other functional monomers and mixtures of these polymers are used. For example, as the acrylic ester, ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, glycidyl acrylate, 2-hydroxyethyl acrylate, etc., and those obtained by replacing the above acrylic esters with, for example, methacrylic esters, etc. Can also be preferably used.

Furthermore, monomers such as acrylic acid, methacrylic acid, acrylonitrile, and vinyl acetate may be copolymerized for the purpose of controlling adhesion and cohesion. The weight average molecular weight of the acrylic polymer obtained by polymerizing these monomers is 5 × 10 ⁴ to 2 × 10 ⁶ , and preferably 4.0 × 10 ^{5 to} 8.0 × 10 ⁵ .

  The pressure-sensitive adhesive as described above can set the adhesive force and the cohesive force to arbitrary values by using a crosslinking agent. Examples of such a crosslinking agent include a polyvalent isocyanate compound, a polyvalent epoxy compound, a polyvalent aziridine compound, and a chelate compound. Specific examples of the polyvalent isocyanate compound include toluylene diisocyanate, diphenylmethane diisocyanate, hexamethylene diisocyanate, isophorone diisocyanate, and those adduct types. Specific examples of the polyvalent epoxy compound include ethylene glycol diglycidyl ether, terephthalic acid diglycidyl ester acrylate, and the like. Specific examples of the polyvalent aziridine compound include tris-2,4,6- (1-aziridinyl) -1,3,5-triazine, tris [1- (2-methyl) -aziridinyl] phosphine oxide, hexa [ 1- (2-Methyl) -aziridinyl] triphosphatriazine and the like are used. As the chelate compound, specifically, ethyl acetoacetate aluminum diisopropylate, aluminum tris (ethyl acetoacetate) or the like is used.

  Moreover, by including a photopolymerizable compound in the pressure-sensitive adhesive layer as described above, the pressure-sensitive adhesive force can be further reduced by irradiating the pressure-sensitive adhesive layer with ultraviolet rays. Examples of such a photopolymerizable compound include photopolymerizable carbon in a molecule that can be three-dimensionally reticulated by light irradiation as disclosed in, for example, JP-A-60-196956 and JP-A-60-223139. -Low molecular weight compounds having at least two carbon double bonds are widely used. Specifically, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol Diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and the like are used.

  Further, in the case of light irradiation in the above-mentioned pressure-sensitive adhesive, the polymerization curing time and the light irradiation amount by light irradiation can be reduced by mixing a photoinitiator. Specific examples of such photoinitiators include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, dibenzyl, diacetyl, β -Chloranthraquinone and the like. The photoinitiator is generally used in an amount of 0.1 to 10 parts by mass with respect to 100 parts by mass of the photopolymerizable compound. By irradiating the photocrosslinkable pressure-sensitive adhesive layer thus formed with light, preferably ultraviolet rays, the initial adhesive strength is greatly reduced, and the pressure-sensitive adhesive tape can be easily peeled off from the adherend. it can.

  Here, where the problem is how to arrange the antistatic layer containing the above-described charge transfer complex or other antistatic agent, the inventors have divided the adhesive layer, and each layer is effective. We have found a structure that can perform its function. For example, as shown in FIG. 1, the adhesive layer is divided into three layers. Here, 11 is a substrate (wafer) of a semiconductor circuit to be an adherend, 12 or 14 is an adhesive layer, 12 is an adhesive layer corresponding to the outermost layer, 13 is an antistatic layer, and 14 is a charged layer. It is an adhesive layer located under a prevention layer, and 15 becomes a base film. By arranging in this way, the outermost layer can have a component composition that emphasizes the function relating to adhesion to a circuit or the like, and the antistatic layer that is the second layer has a component composition that emphasizes the antistatic function. Is applicable. More importantly, since the antistatic layer is positioned as the second layer, the distance between the antistatic layer and the circuit can be adjusted as appropriate, so that the adhesion to the adherend is not affected. This corresponds to a wide range of shapes and properties of the wearing body and can exhibit an effective antistatic effect. In addition, it is conceivable to add and insert layers having other functions, and in the present invention, the total number of layers can be appropriately set, but is preferably about 4 layers.

  Furthermore, the inventors repeatedly tested and analyzed the relationship between the distance from the antistatic layer to the surface of the adhesive layer and the antistatic effect, and the balance between the basic performance and the antistatic performance as an adhesive tape for semiconductors and the adhesive layer. By confirming the relationship with the thickness, it was found that the distance was preferably 10 μm or less, and more preferably 5 μm or less. The mechanism of action of such a phenomenon is not yet clear, but static electricity generated by the peeling charge between the circuit board and other parts of the adherend and the surface of the pressure-sensitive adhesive layer conducts through the pressure-sensitive adhesive layer, which is the outermost layer. This is considered to be due to being easily released to the outside through the prevention layer. Here, it is desirable that the thickness of the outermost layer be at least 2 μm in consideration of variations in molding of the outermost layer and extrusion due to unevenness on the circuit surface.

  On the other hand, the thickness of the total pressure-sensitive adhesive layer is not limited, but the thickness of the total pressure-sensitive adhesive layer is preferably 25 μm or more and more preferably 30 μm or more from the viewpoint of the effect of the present invention. Moreover, although there is no restriction | limiting in particular regarding the upper limit of the said thickness, It is preferable to set it as 200 micrometers or less when the use with the actual adhesive tape for semiconductor fixation is considered.

  The semiconductor fixing pressure-sensitive adhesive tape of the present invention is useful as a pressure-sensitive adhesive tape for dicing or protecting a substrate such as a silicon wafer, glass, ceramics, or polymer when manufacturing various electric, electronic, and semiconductor components.

  EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example, this invention is not limited to these.

Example 1
Polyethyleneimine ethylene oxide adduct (polyethyleneimine molecular weight of about 1800, addition rate of about 100%) and di (glycerin) borate in a 1: 1 equivalent ratio on the release treatment surface of a 38 μm thick PET film separator -40 parts by mass of a charge transfer boron polymer (A) having a boron atom complex structure was dispersed in 100 parts by mass of an acrylic adhesive, coated and dried to obtain an antistatic layer (B) having a thickness of 1 µm. Thereafter, 100 parts by mass of an acrylic pressure-sensitive adhesive (a copolymer of 2-ethylhexyl acrylate and n-butyl acrylate), 4 parts by mass of a polyisocyanate compound (manufactured by Nippon Polyurethane Co., Ltd., trade name Coronate L), and tris as an isocyanurate compound A radiation-curable pressure-sensitive adhesive (C) was obtained by adding and mixing 100 parts by mass of -2-acryloxyethyl isocyanurate and 1 part by mass of α-hydroxycyclohexyl phenyl ketone as a photopolymerization initiator. The resulting pressure-sensitive adhesive (C) is coated on a polyethylene film having a thickness of 100 μm so that the thickness after drying is 25 μm, and an antistatic layer (B) having a thickness of 1 μm is laminated. A 5 μm adhesive (C) was laminated to obtain a radiation-curable adhesive tape for fixing a semiconductor.

(Example 2)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner as in Example 1 except that the amount of the charge transfer boron polymer (A) was 80 parts by mass.

(Example 3)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner as in Example 1 except that the antistatic layer (B) was 2 μm.

(Comparative Example 1)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner as in Example 1 except that the antistatic layer was not provided.

(Comparative Example 2)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner as in Example 1 except that the lamination of the adhesive (C) having a thickness of 5 μm was omitted.

(Comparative Example 3)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner except that the antistatic layer of Example 1 was laminated at a position of 5 μm from the base film (25 μm from the outermost layer).

(Comparative Example 4)
A radiation-curable adhesive tape for fixing a semiconductor was obtained in the same manner except that the antistatic layer of Example 1 was laminated at a position of 18 μm from the base film (12 μm from the outermost layer).

In line with the inquiry For each of the adhesive tapes obtained in Examples 1 to 3 and Comparative Examples 1 to 4, the surface resistivity, equilibrium band voltage, half-life, surface contamination (particle), When the initial adhesive strength, adhesive strength with time, expandability, back surface antistatic layer adhesion, and water resistance were evaluated, the results shown in Table 1 were obtained.

(1) Surface resistivity:
Based on JIS K6911, it measured using R-8740 (trade name) manufactured by Advantest Corporation.

(2) Equilibrium voltage and half-life:
The measurement was performed at an applied voltage of 10 kV using a static Honest meter manufactured by Sicid Trading Company.

(3) Surface contamination (particles):
An adhesive tape was affixed to the semiconductor wafer, and this was irradiated with UV at 200 mJ / cm ² , and then the adhesive tape was peeled off. The number of particles of 0.3 μm or more on the wafer after the adhesive tape was peeled was measured using a surface foreign matter inspection apparatus (trade name Surfscan 6420, manufactured by KLA-Tencor).

(4) Initial adhesive strength:
About the tape sample within 2 weeks after manufacture, each adhesive strength before and after UV irradiation (UV irradiation amount is 200 mJ / cm ² ) was measured according to JIS Z0237. The test adherend was a silicon wafer mirror surface, and the test was performed at 90 ° peeling with a peeling speed of 50 mm / min.

(5) Adhesive strength after 6 months:
About the tape which passed six months after manufacture, it measured the adhesive force before and behind UV irradiation similarly to initial stage adhesive force measurement.

  As is clear from Table 1, the pressure-sensitive adhesive tape of Comparative Example 1 for the invention of claim 1 is very easily charged because it does not have an antistatic layer. Similarly, in Comparative Example 2 for claim 1, since the antistatic layer is in direct contact with the adherend, the adherend is highly contaminated and is not suitable for use in semiconductor applications. Further, in Comparative Example 3 for claim 4, the antistatic layer is provided, but since the insulating pressure-sensitive adhesive layer is 25 μm thick on the antistatic layer, the antistatic performance is remarkably lowered after UV irradiation, which increases the insulating property. Resulting in.

  On the other hand, as is clear from the results of Example 1, the semiconductor fixing tape of the present invention has good antistatic performance after UV irradiation, high adhesive strength before UV irradiation, and high adhesive strength after UV irradiation. It is low and does not contaminate the adherend surface. In general, by providing an antistatic layer, adherence contamination and stability over time of adhesive strength are impaired, but the adhesive tape for fixing a semiconductor of the present invention has high antistatic performance and other tape characteristics. It turns out that there is no negative factor.

It is sectional drawing of the adhesive tape for semiconductor fixation which has a 3 layer structure.

Explanation of symbols

11 Wafer 12 Adhesive layer (outermost layer)
13 Antistatic layer 14 Adhesive layer 15 Base film

Claims (4)

  A pressure-sensitive adhesive tape for fixing a semiconductor comprising a base film and a pressure-sensitive adhesive layer, wherein the pressure-sensitive adhesive layer comprises at least three layers, and an antistatic layer is included in the second layer from the outermost layer, A pressure-sensitive adhesive tape for fixing a semiconductor, having a thickness of 10 μm or less.   The adhesive tape for fixing a semiconductor according to claim 1, wherein the antistatic layer contains a charge transfer complex. The adhesive tape for fixing a semiconductor according to claim 2, wherein the charge transfer complex is a charge transfer boron polymer having a nitrogen atom-boron atom complex structure. The pressure-sensitive adhesive tape for fixing a semiconductor according to any one of claims 1 to 3, wherein the outermost pressure-sensitive adhesive layer comprises a radiation-curable pressure-sensitive adhesive.