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JP4865343B2 - Inspection method for iron-based structures - Google Patents
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JP4865343B2 - Inspection method for iron-based structures - Google Patents

Inspection method for iron-based structures Download PDF

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JP4865343B2
JP4865343B2 JP2006025183A JP2006025183A JP4865343B2 JP 4865343 B2 JP4865343 B2 JP 4865343B2 JP 2006025183 A JP2006025183 A JP 2006025183A JP 2006025183 A JP2006025183 A JP 2006025183A JP 4865343 B2 JP4865343 B2 JP 4865343B2
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iron
magnetic field
magneto
based structure
impedance effect
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JP2007205888A (en
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一実 豊田
哲 中山
和幸 井澤
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Tohoku Electric Power Co Inc
Hitachi High Tech Analysis Corp
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Tohoku Electric Power Co Inc
SII NanoTechnology Inc
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Description

本発明は鉄系構造物の検査方法及びその検査方法に使用する磁気インピーダンス効果センサに関し、柱上トランスのケースや鋼管の内面など、鉄系構造物の欠陥やコンクリート建造物の鉄筋位置等を検出するのに有用である。   The present invention relates to a ferrous structure inspection method and a magneto-impedance effect sensor used in the inspection method, and detects defects in ferrous structures such as the case of a transformer on a pillar and the inner surface of a steel pipe, the position of a reinforcing bar in a concrete building, and the like. Useful to do.

アモルファス合金ワイヤとして、自発磁化の方向がワイヤ周方向に対し互いに逆方向の磁区が交互に磁壁で隔てられた構成の外殻部を有する、零磁歪乃至は負磁歪のアモルファス合金ワイヤが開発されている。
かかる零磁歪乃至は負磁歪のアモルファス磁性ワイヤに高周波電流したときに発生するワイヤ両端間出力電圧中のインダクタンス電圧分は、ワイヤの横断面内に生じる円周方向磁束によって上記の円周方向に易磁化性の外殻部が円周方向に磁化されることに起因して発生する。従って、周方向透磁率μθは同外殻部の円周方向の磁化に依存する。
而るに、この通電中のアモルファスワイヤに外部磁界を作用させると、上記通電による円周方向磁束と外部磁束との合成により、上記円周方向に易磁化性を有する外殻部に作用する磁束の方向が円周方向からずれ、それだけ円周方向への磁化が生じ難くなり、上記周方向透磁率μθが変化し、上記インダクタンス電圧分が変動することになる。
而して、この変動現象が磁気インダクタンス効果と称され、この効果を奏するアモルファスワイヤ等が磁気インダクタンス効果素子と称されている。
As an amorphous alloy wire, an amorphous alloy wire having zero magnetostriction or negative magnetostriction has been developed, which has an outer shell portion in which magnetic domains whose spontaneous magnetization directions are opposite to each other in the circumferential direction of the wire are separated by a domain wall. Yes.
The inductance voltage component in the output voltage between both ends of the wire generated when a high frequency current is applied to the zero magnetostrictive or negative magnetostrictive amorphous magnetic wire is easily increased in the circumferential direction by the circumferential magnetic flux generated in the cross section of the wire. It occurs due to the magnetized outer shell being magnetized in the circumferential direction. Accordingly, the circumferential magnetic permeability μθ depends on the circumferential magnetization of the outer shell.
Therefore, when an external magnetic field is applied to the energized amorphous wire, the magnetic flux acting on the outer shell portion having the easily magnetizable property in the circumferential direction is obtained by synthesizing the circumferential magnetic flux and the external magnetic flux by the energization. Is deviated from the circumferential direction and magnetization in the circumferential direction is less likely to occur, the circumferential permeability μθ is changed, and the inductance voltage is changed.
Thus, this fluctuation phenomenon is called a magnetic inductance effect, and an amorphous wire or the like that exhibits this effect is called a magnetic inductance effect element.

更に、上記通電電流の周波数がMHzオ−ダになると、高周波表皮効果が大きく現れ、表皮深さδ=(2ρ/wμθ)1/2(μθは前記した通り、円周方向透磁率、ρは電気抵抗率、wは角周波数をそれぞれ示す)がμθにより変化し、このμθが前記した通り、外部磁界によって変化するので、ワイヤ両端間出力電圧中の抵抗電圧分も外部磁界で変動するようになる。
而して、この変動現象が磁気インピーダンス効果と称され、この効果を奏するアモルファスワイヤ等が磁気インピーダンス効果素子と称されている。
Further, when the frequency of the energization current is in the order of MHz, a high-frequency skin effect appears greatly, and the skin depth δ = (2ρ / wμθ) 1/2 (μθ is the circumferential permeability, as described above, and ρ is (The electrical resistivity, w indicates the angular frequency, respectively) varies with μθ, and this μθ varies with the external magnetic field as described above, so that the resistance voltage component in the output voltage across the wire also varies with the external magnetic field. Become.
Thus, this fluctuation phenomenon is called a magnetoimpedance effect, and an amorphous wire or the like that exhibits this effect is called a magnetoimpedance effect element.

そこで、この磁気インピーダンス効果素子を利用した外部磁界検出法(例えば、特許文献1参照)及び磁気インダクタンス効果を使用した外部磁界検出方法(例えば、特許文献2参照)が提案されている。   Therefore, an external magnetic field detection method using the magneto-impedance effect element (see, for example, Patent Document 1) and an external magnetic field detection method using the magnetic inductance effect (see, for example, Patent Document 2) have been proposed.

上記において、外部磁界の正負により上記磁界の周方向ずれφにも正負が生じるが、周方向の磁界の減少倍率cos(±φ)は変わらず、従ってμθの減少度は外部磁界の方向の正負によっては変化されない。従って、外部磁界−出力特性は磁界をx軸に、出力をy軸にとると、後述する図7の(イ)に示すように、y軸に対してほぼ左右対称となる。また、図7の(イ)に示すように、非線形になることが知られている。   In the above, the positive and negative of the external magnetic field causes the circumferential shift φ of the magnetic field to be positive or negative, but the reduction factor cos (± φ) of the circumferential magnetic field does not change. Does not change. Accordingly, the external magnetic field-output characteristics are substantially symmetrical with respect to the y axis as shown in FIG. 7A described later when the magnetic field is taken on the x axis and the output is taken on the y axis. Further, as shown in FIG. 7A, it is known that the nonlinearity occurs.

この磁気インピーダンス効果素子を使用した磁界検出回路は、基本的には、図8−1に示すように(1)磁気インピーダンス効果素子1’に高周波励磁電流を加えるための高周波電源2’と、(2)磁気インピーダンス効果素子1’と、(3)磁気インピーダンス効果素子に加わる外部磁界Hexで前記高周波励磁電流(搬送波)を変調させた変調波を復調する検波回路3’と、(4)復調波を増幅する増幅器4’と、(5)被検出磁界表示部5’等から構成されている。
図8−2の(イ)は磁気インピーダンス効果素子に加えられる被検出磁界Hexを、(ロ)は磁気インピーダンス効果素子に流される高周波励磁電流波(搬送波)Icを、(ハ)は磁気インピーダンス効果素子の出力としての変調波を、(ニ)は変調波の包絡線波形を、(ホ)は復調波をそれぞれ示している。図8−2の(ヘ)は増幅器の出力Vを示し、増幅器の電源電圧+Vcc、−Vccに対し、後述の図7の(ハ)に示す出力Eoutを+Vcc〜0、−Vcc〜0の範囲に納めるようにレベル調整している。
As shown in FIG. 8A, the magnetic field detection circuit using the magneto-impedance effect element basically includes (1) a high-frequency power source 2 ′ for applying a high-frequency excitation current to the magneto-impedance effect element 1 ′, 2) a magneto-impedance effect element 1 ′, (3) a detection circuit 3 ′ that demodulates a modulated wave obtained by modulating the high-frequency excitation current (carrier wave) with an external magnetic field Hex applied to the magneto-impedance effect element, and (4) a demodulated wave. Is composed of an amplifier 4 ′ and (5) a detected magnetic field display unit 5 ′.
8B, (b) shows the detected magnetic field Hex applied to the magneto-impedance effect element, (b) shows the high-frequency excitation current wave (carrier wave) Ic flowing through the magneto-impedance effect element, and (c) shows the magneto-impedance effect. The modulated wave as the output of the element, (d) shows the envelope waveform of the modulated wave, and (e) shows the demodulated wave. 8F shows the output V of the amplifier, and the output Eout shown in FIG. 7C described later is in the range of + Vcc to 0 and −Vcc to 0 with respect to the power supply voltages + Vcc and −Vcc of the amplifier. The level is adjusted so that it fits in

被検出磁界の振幅Hexと出力Vの振幅との関係を図示すると前記の左右対称性及び非線形性から図7の(イ)のように表わすことができる。
そこで、図8−1の回路において、6’で示す負帰還用コイルで負帰還をかけて図7の(ロ)に示すように特性を直線化することが行われている。
更に、図7の(ハ)に示すように、図7の(ロ)の特性を、図7の(ハ)に示すようにバイアス磁界により矢印方向に移動させ、被検出磁界の最大範囲−Hmax〜+Hmaxを一斜線領域Δw'の範囲内に納めて極性判別可能することも行われている。
The relationship between the amplitude Hex of the magnetic field to be detected and the amplitude of the output V can be expressed as shown in FIG.
Therefore, in the circuit of FIG. 8A, the negative feedback coil indicated by 6 ′ is subjected to negative feedback to linearize the characteristics as shown in FIG.
Further, as shown in (c) of FIG. 7, the characteristic of (b) of FIG. 7 is moved in the direction of the arrow by the bias magnetic field as shown in (c) of FIG. It is also possible to determine the polarity by placing ~ + Hmax within the range of one oblique line region Δw ′.

従来、磁気インピーダンス効果センサを使用して漏洩磁束探傷法により鋼板内部の欠陥を検出することが公知である(非特許文献1)。
しかしながら、この欠陥検出法では被検査物に磁束を加える必要があり、その磁束印加上、検査対象が制限される。
また、図8−2の(ヘ)において、基準レベルが、磁気インピーダンス効果素子やその他の回路部品のバラツキ等によりずれることが往々に観られる。このために、従来では、演算増幅器のオフセット調整端子にボリュームを接続し、基準レベルの調整をボリュームにより行っている。
更に、磁気インピーダンス効果素子の特性のバラッキに対して演算増幅器の出力を調整するために、その増幅器のオフセット調整端子に電子ボリュームを接続し、前記バラッキに応じて補正データを入力したメモリ装置で電子ボリュームを操作して演算増幅器の出力を調整することも公知である(特許文献3)。
しかしながら、鉄系構造物の傷、減肉、錆び等の欠陥をセンサによるスキャニングで検出する場合、前記の何れの増幅器の出力調整でも、スキャニングルートに沿っての温度条件の変化や浮遊キャパシタンスの変動などにより前記基準レベルからのシフトが後発的に生じ、適確な検出を行い難い。
Conventionally, it is known to detect a defect in a steel sheet by a leakage magnetic flux flaw detection method using a magnetic impedance effect sensor (Non-Patent Document 1).
However, in this defect detection method, it is necessary to apply a magnetic flux to the object to be inspected, and the inspection object is limited in applying the magnetic flux.
In FIG. 8-2 (f), it is often observed that the reference level is shifted due to variations in magneto-impedance effect elements and other circuit components. For this reason, conventionally, a volume is connected to the offset adjustment terminal of the operational amplifier, and the reference level is adjusted by the volume.
Further, in order to adjust the output of the operational amplifier with respect to variations in the characteristics of the magneto-impedance effect element, an electronic volume is connected to the offset adjustment terminal of the amplifier, and correction data is input in accordance with the variation. It is also known to adjust the output of an operational amplifier by operating a volume (Patent Document 3).
However, when detecting defects such as flaws, thinning, rust, etc. in iron-based structures by scanning with a sensor, changes in temperature conditions and fluctuations in stray capacitance along the scanning route can be achieved with any of the above-mentioned amplifier output adjustments. As a result, a shift from the reference level occurs later, and it is difficult to perform accurate detection.

特開平7−181239号公報JP 7-181239 A 特開平6−283344号公報JP-A-6-283344 特開2002−198582号公報の段落0046、0047Paragraphs 0046 and 0047 of JP 2002-198582 A 藤本 幸二、毛利 佳年雄,MAG−98−86,p39〜43Koji Fujimoto, Yoshio Mohri, MAG-98-86, p39-43

本発明の目的は、鉄系構造物を磁気インピーダンス効果センサにより適確・容易に検査できる方法とその方法に好適な磁気インピーダンス効果センサを提供することにあり、例えば、柱上トランスのケース、鋼管の内壁面、あるいは、コンクリート構造物内部の鉄筋の劣化診断に適用できる。   An object of the present invention is to provide a method capable of accurately and easily inspecting an iron-based structure with a magneto-impedance effect sensor and a magneto-impedance effect sensor suitable for the method. For example, a case of a transformer on a column, a steel pipe It can be applied to the deterioration diagnosis of the inner wall of the steel or the rebar inside the concrete structure.

請求項1に係る鉄系構造物の検査方法は、磁気インピーダンス効果素子にバイアス磁界用コイルを付設し、その素子の出力を増幅器で増幅して検出出力を得る磁気インピーダンス効果センサを、磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする。According to a first aspect of the present invention, there is provided a method for inspecting an iron-based structure comprising: a magnetic impedance effect sensor including a bias magnetic field coil attached to a magneto-impedance effect element; While applying an exciting current to the element and applying a bias magnetic field in which the AC component is superimposed on the DC component, the element travels along the iron-based structure. During this travel, the bias magnetic field is applied to the iron-based structure and the iron-based structure is connected to the magnetic circuit. The detection output is changed by changing a bias magnetic field passing through the magneto-impedance effect element based on the defect of the iron-based structure that is passed as a part of the iron-based structure, and the defect of the iron-based structure is detected from this change. .
請求項2に係る鉄系構造物の検査方法は、磁気インピーダンス効果素子にバイアス磁界用コイルを付設し、その素子の出力を増幅器で増幅して検出出力を得、増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを、磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする。  According to a second aspect of the present invention, there is provided a method for inspecting an iron-based structure, wherein a bias magnetic field coil is attached to a magneto-impedance effect element, an output of the element is amplified by an amplifier, and a detection output is obtained. A compensation signal for canceling the offset is generated, and a magneto-impedance effect sensor provided with a correction circuit for applying the compensation signal to the amplifier as an input for erasing the offset is provided. An excitation current is applied to the magneto-impedance effect element. While energizing and running along a ferrous structure while applying a bias magnetic field in which the ac component is superimposed on the dc component, during this run, the bias magnetic field passes through the ferrous structure and passes the ferrous structure as part of the magnetic circuit. The detection output is changed by changing the bias magnetic field passing through the magneto-impedance effect element based on the defect of the iron-based structure. And detecting defects in iron-based structure from the change.
請求項3に係る鉄系構造物の検査方法は、一対の磁気インピーダンス効果素子のそれぞれにバイアス磁界用コイルを付設し、両素子の出力を差動増幅器で増幅して検出出力を得、差動増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする。  According to a third aspect of the present invention, there is provided a method for inspecting an iron-based structure, wherein a bias magnetic field coil is attached to each of a pair of magneto-impedance effect elements, and the output of both elements is amplified by a differential amplifier to obtain a detection output. A magneto-impedance effect sensor provided with a correction circuit for generating a compensation signal for canceling the offset using the offset of the amplifier output as an input signal and applying the compensation signal to the amplifier as an input for erasing the offset While applying an exciting current to the impedance effect element and applying a bias magnetic field in which the AC component is superimposed on the DC component, the impedance effect element is run along the iron-based structure. During this travel, the bias magnetic field is applied to the iron-based structure and the iron-based structure is moved. The detection is performed by changing the bias magnetic field passing through the magneto-impedance effect element based on the defect of the iron-based structure that is passed as part of the magnetic circuit. Changing the output, and detecting a defect of the iron-based structure from this change.
請求項4に係る鉄系構造物の検査方法は、一対の磁気インピーダンス効果素子のそれぞれにバイアス磁界用コイルを付設し、両素子の出力を差動増幅器で増幅して検出出力を得、差動増幅器の両入力端子間に、差動増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする。  According to a fourth aspect of the present invention, there is provided a method for inspecting an iron-based structure, wherein a bias magnetic field coil is attached to each of a pair of magneto-impedance effect elements, and the output of both elements is amplified by a differential amplifier to obtain a detection output. A correction signal for canceling the offset is generated between the input terminals of the amplifier using the offset of the differential amplifier output as an input signal, and this compensation signal is applied to the amplifier as an input for eliminating the offset. A magneto-impedance effect sensor provided with a circuit is driven along an iron-based structure while applying a bias magnetic field in which an alternating current component is superimposed on a direct current component while applying an exciting current to the magneto-impedance effect element. Pass the iron-based structure through the magnetic structure as part of the magnetic circuit and pass through the magneto-impedance effect element based on the defect of the iron-based structure. Changing the astigmatic magnetic field changing the detection output, and detecting a defect of the iron-based structure from this change.
請求項5に係る鉄系構造物の検査方法は、請求項2〜4何れかの鉄系構造物の検査方法において、磁気インピーダンス効果センサの補正回路に、増幅器または差動増幅器出力のオフセットが所定値に達したときに補償用出力を発生する手段を付設したことを特徴とする。  An inspection method for an iron-based structure according to claim 5 is the method for inspecting an iron-based structure according to any one of claims 2 to 4, wherein an offset of an amplifier or a differential amplifier output is predetermined in the correction circuit of the magneto-impedance effect sensor. Means are provided for generating a compensation output when the value is reached.
請求項6に係る鉄系構造物の検査方法は、請求項5の鉄系構造物の検査方法において、磁気インピーダンス効果センサの増幅器または差動増幅器出力のオフセットをn倍(n>1)して補正回路に入力する手段を付設したことを特徴とする。  An inspection method for an iron-based structure according to a sixth aspect is the method for inspecting an iron-based structure according to the fifth aspect, wherein an offset of an output of a magneto-impedance effect sensor or a differential amplifier is multiplied by n (n> 1). A means for inputting to the correction circuit is provided.

(1)本発明に係る鉄系構造物の検査方法では、鉄系構造物もバイアス磁界に対し磁気回路の一部となり、バイアス磁界の強さが鉄系構造物の傷・腐食・減肉の程度に応じて変化する。このバイアス磁界が磁気インピーダンス効果素子としてのアモルファスワイヤ内を軸方向に通過するから、励磁電流による円周方向磁界が円周方向からずらされ、そのずれの程度が埋設鉄系材の腐食・減肉の程度に応じて変化される。従って、磁気インピーダンス効果素子の出力変化が鉄系構造物の傷・腐食・減肉の程度に相関し、その出力変化から鉄系構造物の欠陥の程度を検査できる。
(2)本発明に係る磁気インピーダンス効果センサでは、増幅器の出力がオフセットしようとしても、調整回路によりそのオフセットが自動的に消去される。従って、磁気インピーダンス効果センサの走行・スキャニング中、温度条件や浮遊キャパシタンスが変化しても、実際上、出力変化として現れないから、鉄系構造物の欠陥をセンサのバイアス磁界に対する出力変化に基づき適確に検出・測定できる。
(1) In the method for inspecting an iron-based structure according to the present invention, the iron-based structure also becomes a part of a magnetic circuit with respect to a bias magnetic field, and the strength of the bias magnetic field causes damage, corrosion, or thinning of the iron-based structure. Varies depending on the degree. Since this bias magnetic field passes through the amorphous wire as the magneto-impedance effect element in the axial direction, the circumferential magnetic field due to the excitation current is shifted from the circumferential direction, and the degree of the shift is corrosion / thinning of the embedded iron-based material. It changes according to the degree. Therefore, the change in output of the magneto-impedance effect element correlates with the degree of scratches, corrosion, and thinning of the iron-based structure, and the degree of defects in the iron-based structure can be inspected from the change in output.
(2) In the magneto-impedance effect sensor according to the present invention, even if the output of the amplifier is about to be offset, the offset is automatically erased by the adjustment circuit. Therefore, even if the temperature condition or stray capacitance changes during running / scanning of the magneto-impedance effect sensor, it does not actually appear as an output change. It can be detected and measured accurately.

以下、図面を参照しつつ本発明の実施の形態について説明する。
図1は本発明の鉄系構造物の検査方法において使用する磁気インピーダンス効果センサの一例の回路図を示している。
図1において、1は磁気インピーダンス効果素子であり、自発磁化の方向がワイヤ周方向に対し互いに逆方向の磁区が交互に磁壁で隔てられた構成の外殻部を有する、零磁歪乃至は負磁歪のアモルファス合金ワイヤが使用される。かかる零磁歪乃至は負磁歪のアモルファス磁性ワイヤに高周波励磁電流を流したときに発生するワイヤ両端間出力電圧中のインダクタンス電圧分は、ワイヤの横断面内に生じる円周方向磁束によって上記の円周方向に易磁化性の外殻部が円周方向に磁化されることに起因して発生する。従って、周方向透磁率μθは同外殻部の円周方向の磁化に依存する。而るに、この通電中のアモルファスワイヤの軸方向に信号磁界を作用させると、上記通電による円周方向磁束と信号磁界磁束との合成により、上記円周方向に易磁化性を有する外殻部に作用する磁束の方向が円周方向からずれ、それだけ円周方向への磁化が生じ難くなり、上記周方向透磁率μθが変化し、上記インダクタンス電圧分が変動することになる。この変動現象は磁気インダクタンス効果と称され、これは上記高周波励磁電流(搬送波)が信号磁界(信号波)で変調される現象ということができる。更に、上記通電電流の周波数がMHzオ−ダになると、高周波表皮効果が大きく現れ、表皮深さδ=(2ρ/wμθ)1/2(μθは前記した通り円周方向透磁率、ρは電気抵抗率、wは角周波数をそれぞれ示す)がμθにより変化し、このμθが前記した通り、信号磁界によって変化するので、ワイヤ両端間出力電圧中の抵抗電圧分も信号磁界で変動するようになる。この変動現象は磁気インピーダンス効果と称され、これは上記高周波励磁電流(搬送波)が信号磁界(信号波)で変調される現象ということができる。
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 shows a circuit diagram of an example of a magneto-impedance effect sensor used in the inspection method of an iron-based structure of the present invention.
In FIG. 1, reference numeral 1 denotes a magneto-impedance effect element, which has a zero magnetostriction or a negative magnetostriction having an outer shell portion in which magnetic domains whose spontaneous magnetization directions are opposite to each other in the circumferential direction of the wire are alternately separated by domain walls. Amorphous alloy wire is used. The inductance voltage component in the output voltage between both ends of the wire generated when a high-frequency excitation current is passed through an amorphous magnetic wire having zero magnetostriction or negative magnetostriction is obtained by the circumferential magnetic flux generated in the cross section of the wire. This occurs due to the magnetization of the easily magnetizable outer shell in the circumferential direction. Accordingly, the circumferential magnetic permeability μθ depends on the circumferential magnetization of the outer shell. Thus, when a signal magnetic field is applied in the axial direction of the amorphous wire being energized, the outer shell portion having the easily magnetizable property in the circumferential direction is obtained by synthesizing the circumferential magnetic flux and the signal magnetic field magnetic flux by the energization. The direction of the magnetic flux acting on the magnetic field is deviated from the circumferential direction, and magnetization in the circumferential direction is less likely to occur, the circumferential permeability μθ is changed, and the inductance voltage is changed. This fluctuation phenomenon is called a magnetic inductance effect, which can be said to be a phenomenon in which the high-frequency excitation current (carrier wave) is modulated by a signal magnetic field (signal wave). Further, when the frequency of the energizing current is in the order of MHz, a high-frequency skin effect appears greatly, and the skin depth δ = (2ρ / wμθ) 1/2 (μθ is the circumferential permeability, as described above, and ρ is the electrical conductivity. (Resistivity, w indicates angular frequency) varies with μθ, and μθ varies with the signal magnetic field as described above, so the resistance voltage component in the output voltage across the wire also varies with the signal magnetic field. . This fluctuation phenomenon is called a magneto-impedance effect, which can be said to be a phenomenon in which the high-frequency excitation current (carrier wave) is modulated by a signal magnetic field (signal wave).

図1において、2は磁気インピーダンス効果素子に高周波励磁電流を加えるための高周波電流源回路、3は磁気インピーダンス効果素子の軸方向に作用する信号磁界H(信号波)で前記高周波励磁電流(搬送波)を変調させた被変調波を復調する検波回路、4は復調波を増幅する増幅回路、5は出力端、6は負帰還用コイル、7はバイアス磁界用コイルである。   In FIG. 1, 2 is a high-frequency current source circuit for applying a high-frequency excitation current to the magneto-impedance effect element, and 3 is a signal magnetic field H (signal wave) acting in the axial direction of the magneto-impedance effect element. 4 is an amplifier circuit for amplifying the demodulated wave, 5 is an output terminal, 6 is a negative feedback coil, and 7 is a bias magnetic field coil.

本発明により鉄系構造物を検査するには、前記のセンサを、磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行またはスキャニングさせていく。
磁気インピーダンス効果素子や負帰還用コイル及びバイアス磁界用コイルを搭載する基板と高周波励磁電流源や検波回路や増幅回路や出力端を搭載する基板とを別体として磁気インピーダンス効果素子−負帰還用コイル及びバイアス磁界用コイルのみを走行またはスキャニングさせるようにしてもよい。
In order to inspect an iron-based structure according to the present invention, the above-mentioned sensor is run along the iron-based structure while applying a bias magnetic field in which an alternating current is superimposed on a direct current component while applying an exciting current to the magneto-impedance effect element. Let me scan.
Magnet impedance effect element, negative feedback coil, bias magnetic field coil and substrate for mounting high frequency excitation current source, detection circuit, amplification circuit, and output terminal are separated into a magnetic impedance effect element and negative feedback coil. Further, only the bias magnetic field coil may be run or scanned.

図2−1において、直線Pは図7の(ロ)で説明した磁気インピーダンス効果素子の出力特性を示し、磁界Hbは直流磁界に交流磁界を重畳させたバイアス磁界を、Eはこのバイアス磁界のもとでの外部磁界Hex=0のときの出力をそれぞれ示している。
センサの走行またはスキャニングにおいて、鉄系構造物例えば鉄パイプに傷、減肉、錆び等の欠陥が存在すると、バイアス磁界がその欠陥を通る磁気回路のリラクタンスが変化するために、その箇所を磁気インピーダンス効果センサが通過するときにバイアス磁界Hbが変化し、出力が変化する。
従って、出力の変化から欠陥の存在を検知することができる。
上記バイアス磁界の振幅は図7の(ロ)のリニア範囲nまたはmに納まるように設定される。
バイアス磁界の直流分に重畳する交流分の周波数は励磁電流の周波数よりも低く設定される。
この条件のもとで交流分の周波数を低く設定すれば、深部の欠陥もよく検出できる。欠陥が浅い位置にのみ存在する場合や鉄系構造物が薄い場合は、交流分の周波数を可及的に高くすることが検出感度上有利である。
2A, the straight line P indicates the output characteristics of the magneto-impedance effect element described in FIG. 7B, the magnetic field Hb indicates a bias magnetic field in which an AC magnetic field is superimposed on the DC magnetic field, and E indicates the bias magnetic field. The output when the external magnetic field Hex = 0 is shown.
When a sensor is running or scanning, if a defect such as a flaw, thinning, or rust exists in an iron-based structure such as an iron pipe, the reluctance of the magnetic circuit that passes through the defect changes, so that the magnetic impedance When the effect sensor passes, the bias magnetic field Hb changes and the output changes.
Therefore, the presence of a defect can be detected from the change in output.
The amplitude of the bias magnetic field is set so as to be within the linear range n or m in (b) of FIG.
The frequency of the AC component superimposed on the DC component of the bias magnetic field is set lower than the frequency of the excitation current.
If the frequency for alternating current is set low under these conditions, defects in the deep part can be detected well. When the defect exists only at a shallow position or when the iron-based structure is thin, it is advantageous in terms of detection sensitivity to increase the frequency of the alternating current as much as possible.

図2−2は、鉄系構造物の欠陥上をセンサが通過するときのバイアス磁界の変化を示している。直流バイアス磁界の変化は△で示し、交流バイアス磁界の変化は波高値の差で現れている。
通常、スキャニングルートに沿い不均一に残留磁気が存在し、残留磁気による直流磁界が外部磁界としてセンサに作用する。
而るに、検出出力からコンデンサ等で直流分をカットすれば、図2−2のE、E’で示すように、交流出力変化分のみが現れる。 従って、残留磁気の影響を受けることなく鉄系構造物の欠陥を検出できる。
また、検出出力の直流分が大きくなって検出計が振り切れるといった不都合も排除できる。
FIG. 2-2 shows the change of the bias magnetic field when the sensor passes over the defect of the iron-based structure. A change in the DC bias magnetic field is indicated by Δ, and a change in the AC bias magnetic field appears as a difference in peak values.
Normally, residual magnetism exists non-uniformly along the scanning route, and a DC magnetic field due to residual magnetism acts on the sensor as an external magnetic field.
Thus, if the DC component is cut from the detected output by a capacitor or the like, only the AC output change appears as indicated by E and E ′ in FIG. Therefore, it is possible to detect defects in the iron-based structure without being affected by the residual magnetism.
Further, it is possible to eliminate the inconvenience that the DC component of the detection output becomes large and the detector is shaken off.

スキャニングルートの如何によっては、ルートに沿い温度条件が大きく変化したり、浮遊キャパシタンスが大きく変化して増幅器のオフセット値が変化し、検出に支障を来す畏れがある。
請求項2〜6に係る磁気インピーダンス効果センサによればかかる不都合を排除できる。
Depending on the scanning route, the temperature condition may change greatly along the route, or the stray capacitance may change greatly and the offset value of the amplifier may change, which may hinder detection.
According to the magneto-impedance effect sensor according to claims 2 to 6, such inconvenience can be eliminated.

図3−1は請求項2に係る磁気インピーダンス効果センサの一実施例の回路図を示している。
図3−1において、1は磁気インピーダンス効果素子、2は磁気インピーダンス効果素子に高周波励磁電流を加えるための高周波電流源回路、3は磁気インピーダンス効果素子の軸方向に作用する信号磁界H(信号波)で前記高周波励磁電流(搬送波)を変調させた被変調波を復調する検波回路、4は復調波を増幅する増幅回路、5は出力端、6は負帰還用コイル、7はバイアス磁界用コイルである。
8は出力補正回路であり、増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させこの補償用信号を前記増幅器に前記オフセットを消去するための入力として加えるものである。
FIG. 3A shows a circuit diagram of an embodiment of the magneto-impedance effect sensor according to claim 2.
In FIG. 3A, 1 is a magneto-impedance effect element, 2 is a high-frequency current source circuit for applying a high-frequency excitation current to the magneto-impedance effect element, and 3 is a signal magnetic field H (signal wave) acting in the axial direction of the magneto-impedance effect element. ) To demodulate the modulated wave obtained by modulating the high-frequency excitation current (carrier wave), 4 is an amplifier circuit for amplifying the demodulated wave, 5 is an output terminal, 6 is a negative feedback coil, and 7 is a bias magnetic field coil. It is.
Reference numeral 8 denotes an output correction circuit for generating an offset signal of an amplifier output as an input signal, generating a compensation signal for canceling the offset, and adding the compensation signal to the amplifier as an input for erasing the offset.

図3−2は出力補正回路の一例を示し、演算増幅器の出力と入力とを比較してオフセットを検出し、オフセットが正(負)であると、電子ボリュームのスイッチSW−1、SW−2、……(SW+1、SW+2、……)が制御ICで順次にオン・オフされて負(正)の出力電圧が演算増幅器のオフセット調整端子に送入されて増幅器出力のオフセットが減じられ、そのオフセットが0になると、その時のスイッチ状態が保持される。
演算増幅器の出力のオフセットを所定の範囲、例えば−1v〜+1vの範囲に納めるようにしてもよく、この場合、増幅器出力のオフセットが1vを越えると、電子ボリュームが操作される。
更に、ゲインが1以上、例えば2倍のバッファを制御ICに組み込んで増幅器出力のオフセットが±0.5vを越えると電子ボリュームが操作されるようにして演算増幅器の出力のオフセットを−0.5v〜+0.5vの範囲に納めるようにすることもできる。
FIG. 3-2 shows an example of the output correction circuit. The offset is detected by comparing the output and input of the operational amplifier. When the offset is positive (negative), the electronic volume switches SW −1 and SW −2 are detected. ,... (SW + 1 , SW + 2 ,...) Are sequentially turned on and off by the control IC, and a negative (positive) output voltage is sent to the offset adjustment terminal of the operational amplifier to reduce the offset of the amplifier output. When the offset becomes 0, the switch state at that time is held.
The offset of the output of the operational amplifier may be set within a predetermined range, for example, a range of −1v to + 1v. In this case, when the offset of the amplifier output exceeds 1v, the electronic volume is operated.
Further, a buffer having a gain of 1 or more, for example, 2 times, is incorporated in the control IC, and when the offset of the amplifier output exceeds ± 0.5 V, the electronic volume is operated so that the offset of the operational amplifier output is −0.5 V. It can also be set within the range of ~ 0.5V.

図4は請求項3に係る磁気インピーダンス効果センサの一実施例の回路図を示している。
図4において、1a,1bは一対の磁気インピーダンス効果素子であり、それぞれ負帰還用コイル6a,6b及びバイアス磁界用コイル7a,7bを備えている。前記と同様にバイアス磁界には直流に交流を重畳したものが使用され、その振幅は図7の(ロ)のリニア範囲nまたはmに納まるように設定されている。
2は磁気インピーダンス効果素子に高周波励磁電流を加えるための高周波電流源回路、3a,3bは各磁気インピーダンス効果素子1a,1bの軸方向に作用する信号磁界Hex(信号波)で前記高周波励磁電流(搬送波)を変調させた被変調波を復調する検波回路、4は両検波出力を差動増幅して検出出力を得るための演算差動増幅器である。60は差動増幅器4の出力を各負帰還用コイル6a,6bに対し負帰還させるための負帰還回路である。5は検出出力端である。
8は出力補正回路であり、演算差動増幅器4のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させこの補償用信号を前記増幅器に前記オフセットを消去するための入力として加えるものである。
この出力補正回路には前記と同様図3−2に示すものを使用でき、演算差動増幅器の出力と入力とを比較してオフセットを検出し、オフセットが正(負)であると、電子ボリュームのスイッチSW−1、SW−2、……(SW+1、SW+2、……)が制御ICで順次にオン・オフされて負(正)の出力信号が演算差動増幅器のオフセット調整端子に送入されて差動増幅器出力のオフセットが減じられ、そのオフセットが0になると、その時のスイッチ状態が保持される。
演算差動増幅器の出力のオフセットを所定の範囲、例えば−1v〜+1vの範囲に納めるようにしてもよく、この場合、差動増幅器出力のオフセットが1vを越えると、電子ボリュームが操作される。
更に、ゲインが1以上、例えば2倍のバッファを制御ICに組み込んで差動増幅器出力のオフセットが±0.5vを越えると電子ボリュームが操作されるようにして演算差動増幅器の出力のオフセットを−0.5v〜+0.5vの範囲に納めるようにすることもできる。
FIG. 4 shows a circuit diagram of an embodiment of a magneto-impedance effect sensor according to claim 3.
In FIG. 4, reference numerals 1a and 1b denote a pair of magneto-impedance effect elements each having negative feedback coils 6a and 6b and bias magnetic field coils 7a and 7b. Similar to the above, a bias magnetic field in which an alternating current is superimposed on a direct current is used, and the amplitude thereof is set to fall within the linear range n or m in (b) of FIG.
Reference numeral 2 denotes a high-frequency current source circuit for applying a high-frequency excitation current to the magneto-impedance effect element. Reference numerals 3a and 3b denote signal magnetic fields Hex (signal waves) acting in the axial direction of the magneto-impedance effect elements 1a and 1b. A detection circuit 4 for demodulating the modulated wave having a modulated carrier wave) is an operational differential amplifier for obtaining a detection output by differentially amplifying both detection outputs. Reference numeral 60 denotes a negative feedback circuit for negatively feeding back the output of the differential amplifier 4 to the negative feedback coils 6a and 6b. Reference numeral 5 denotes a detection output terminal.
Reference numeral 8 denotes an output correction circuit which uses the offset of the operational differential amplifier 4 as an input signal, generates a compensation signal for canceling the offset, and adds this compensation signal to the amplifier as an input for erasing the offset. It is.
The output correction circuit shown in FIG. 3-2 can be used as described above, and the offset is detected by comparing the output and input of the operational differential amplifier. If the offset is positive (negative), the electronic volume Switches SW −1 , SW −2 ,... (SW +1 , SW +2 ,...) Are sequentially turned on and off by the control IC, and a negative (positive) output signal is applied to the offset adjustment terminal of the operational differential amplifier. When the offset of the differential amplifier output is reduced and becomes zero, the switch state at that time is maintained.
The offset of the output of the operational differential amplifier may be set within a predetermined range, for example, a range of -1v to + 1v. In this case, when the offset of the differential amplifier output exceeds 1v, the electronic volume is manipulated.
In addition, a buffer with a gain of 1 or more, for example, 2 times, is incorporated in the control IC so that if the offset of the differential amplifier output exceeds ± 0.5 V, the electronic volume is operated to reduce the offset of the operational differential amplifier output. It can also be set within the range of -0.5v to + 0.5v.

図5−1は請求項4に係る磁気インピーダンス効果センサの一実施例の回路図を示している。
図5−1において、1a,1bは一対の磁気インピーダンス効果素子であり、それぞれ負帰還用コイル6a,6b及びバイアス磁界用コイル7a,7bを備えている。前記と同様にバイアス磁界には直流に交流を重畳したものが使用され、その振幅は図7の(ロ)のリニア範囲nまたはmに納まるように設定されている。
2は磁気インピーダンス効果素子に高周波励磁電流を加えるための高周波電流源回路、3a,3bは各磁気インピーダンス効果素子1a,1bの軸方向に作用する信号磁界Hex(信号波)で前記高周波励磁電流(搬送波)を変調させた被変調波を復調する検波回路、4は両検波出力を差動増幅して検出出力を得るための演算差動増幅器である。60は差動増幅器4の出力を各負帰還用コイル6a,6bに対し負帰還させるための負帰還回路である。5は検出出力端である。
8は演算差動増幅器4の両入力端子間に接続した出力補正回路であり、差動増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させこの補償用信号を前記増幅器に前記オフセットを消去するための入力として加えるものである。
FIG. 5A shows a circuit diagram of an embodiment of a magneto-impedance effect sensor according to claim 4.
5A, reference numerals 1a and 1b denote a pair of magneto-impedance effect elements, which respectively include negative feedback coils 6a and 6b and bias magnetic field coils 7a and 7b. Similar to the above, a bias magnetic field in which an alternating current is superimposed on a direct current is used, and the amplitude thereof is set to fall within the linear range n or m in (b) of FIG.
Reference numeral 2 denotes a high-frequency current source circuit for applying a high-frequency excitation current to the magneto-impedance effect element. Reference numerals 3a and 3b denote signal magnetic fields Hex (signal waves) acting in the axial direction of the magneto-impedance effect elements 1a and 1b. A detection circuit 4 for demodulating the modulated wave having a modulated carrier wave) is an operational differential amplifier for obtaining a detection output by differentially amplifying both detection outputs. Reference numeral 60 denotes a negative feedback circuit for negatively feeding back the output of the differential amplifier 4 to the negative feedback coils 6a and 6b. Reference numeral 5 denotes a detection output terminal.
Reference numeral 8 denotes an output correction circuit connected between both input terminals of the operational differential amplifier 4. The offset signal of the differential amplifier output is used as an input signal to generate a compensation signal for canceling the offset signal. Is added as an input for erasing the offset.

図5−2の(イ)はその出力補正回路の一例を示し、差動増幅器の出力と差動増幅器の差出力とを比較して差動増幅器の出力のオフセットを検出し、そのオフセットを図5−2の(ロ)に示すボリューム操作により0にすることを、オフセットを入力信号として制御ICで電子ボリュームのスイッチSW、SW−1、SW−2、……、SW、SW+1、SW+2、……を操作させることにより行うものである。
前記と同様に演算差動増幅器の出力のオフセットを所定の範囲、例えば−1v〜+1vの範囲に納めるようにしてもよく、この場合は、演算差動増幅器の出力のオフセットが−1vまたは+1vを越えると、電子ボリュームが操作される。この場合、ゲインが1以上、例えば2倍のバッファを制御ICに組み込んで±0.5vを越えると電子ボリュームが操作されるようにして演算差動増幅器の出力のオフセットを−0.5v〜+0.5vの範囲に納めるようにすることもできる。
FIG. 5-2 (a) shows an example of the output correction circuit. The output of the differential amplifier is compared with the difference output of the differential amplifier to detect the offset of the differential amplifier, and the offset is shown in FIG. It is set to 0 by the volume operation shown in (b) of 5-2, and the electronic control switches SW 0 , SW −1 , SW −2 ,..., SW 0 , SW +1,. This is done by operating SW +2 .
Similarly to the above, the offset of the output of the operational differential amplifier may be set within a predetermined range, for example, the range of -1v to + 1v. In this case, the offset of the output of the operational differential amplifier is set to -1v or + 1v. If exceeded, the electronic volume is operated. In this case, the offset of the output of the operational differential amplifier is set to −0.5v to +0 so that the electronic volume is manipulated when a gain of 1 or more, for example, a double buffer is incorporated in the control IC and exceeds ± 0.5v. It is also possible to fit within the range of .5v.

本発明に係る磁気インピーダンス効果素子センサにおいて、磁気インピーダンス効果素子1には、零磁歪乃至は負磁歪のアモルファスワイヤの外、アモルファスリボン、アモルファススパッタ膜等も使用できる。   In the magneto-impedance effect element sensor according to the present invention, as the magneto-impedance effect element 1, an amorphous ribbon, an amorphous sputtered film, or the like can be used in addition to an amorphous wire having zero or negative magnetostriction.

本発明に係る磁気インピーダンス効果素子センサにおいて、磁気インピーダンス効果素子1には、遷移金属と非金属の合金で非金属が10〜30原子%組成のもの、特に遷移金属と非金属との合金で非金属量が10〜30原子%を占め、遷移金属がFeとCoで非金属がBとSiであるかまたは遷移金属がFeで非金属がBとSiである組成のものを使用することができ、例えば、組成Co70.515Si10Fe4.5、長さ2000μm〜6000μm、外径30μm〜50μmφのものを使用できる。 In the magneto-impedance effect element sensor according to the present invention, the magneto-impedance effect element 1 includes an alloy of transition metal and non-metal having a non-metal composition of 10 to 30 atomic%, particularly an alloy of transition metal and non-metal. A composition in which the metal amount occupies 10 to 30 atomic% and the transition metal is Fe and Co and the nonmetal is B and Si or the transition metal is Fe and the nonmetal is B and Si can be used. For example, the composition Co 70.5 B 15 Si 10 Fe 4.5 , length 2000 μm to 6000 μm, and outer diameter 30 μm to 50 μmφ can be used.

高周波励磁電流には、例えば連続正弦波、パルス波、三角波等の通常の高周波を使用でき、高周波励磁電流源としては、例えばハートレー発振回路、コルピッツ発振回路、コレクタ同調発振回路、ベース同調発振回路のような通常の発振回路の外、水晶発振器の矩形波出力を直流分カットコンデンサを経て積分回路で積分しこの積分出力の三角波を増幅回路で増幅する三角波発生器、CMOS−ICを発振部として使用した三角波発生器等を使用できる。   For the high-frequency excitation current, a normal high frequency such as a continuous sine wave, a pulse wave, or a triangular wave can be used. As the high-frequency excitation current source, for example, a Hartley oscillation circuit, a Colpitts oscillation circuit, a collector tuned oscillation circuit, a base tuned oscillation circuit In addition to the normal oscillation circuit, a square wave generator that integrates the square wave output of the crystal oscillator through a DC component cut-off capacitor with an integration circuit and amplifies the triangular wave of this integration output with an amplification circuit, and uses a CMOS-IC as the oscillation unit Can be used.

検波回路としては、例えば被変調波を演算増幅回路で半波整流しこの半波整流波を並列RC回路またはRCローパスフィルターで処理して半波整流波の包絡線出力を得る構成、被変調波をダイオードで半波整流しこの半波整流波を並列RC回路またはRCローパスフィルターで処理して半波整流波の包絡線出力を得る構成等を使用できる。
また、被変調波(周波数fs)に同調させた周波数fsの方形波を被変調波に乗算して信号波をサンプリングする同調検波を使用することができる。
上記の実施例では、被変調波の復調によって信号磁界(信号波)を取り出しているが、これに限定されず、磁気インピーダンス効果素子に作用する信号磁界(信号波)で変調された高周波励磁電流波(搬送波)から信号磁界を検波し得るものであれば、適宜の検波手段を使用できる。
As the detection circuit, for example, a configuration in which a modulated wave is half-wave rectified by an operational amplifier circuit and the half-wave rectified wave is processed by a parallel RC circuit or an RC low-pass filter to obtain an envelope output of the half-wave rectified wave, the modulated wave The half-wave rectified wave is processed by a diode, and the half-wave rectified wave is processed by a parallel RC circuit or an RC low-pass filter to obtain an envelope output of the half-wave rectified wave.
Further, it is possible to use tuning detection in which a signal wave is sampled by multiplying the modulated wave by a square wave having a frequency fs tuned to the modulated wave (frequency fs).
In the above embodiment, the signal magnetic field (signal wave) is extracted by demodulating the modulated wave. However, the present invention is not limited to this, and the high-frequency excitation current modulated by the signal magnetic field (signal wave) acting on the magneto-impedance effect element. As long as the signal magnetic field can be detected from the wave (carrier wave), an appropriate detection means can be used.

負帰還用コイル及びバイアス磁界用コイルは磁気インピーダンス効果素子に巻き付けることができる。また、図6に示すように磁気インピーダンス効果素子とループ磁気回路を構成する鉄芯に負帰還用コイル及びバイアス磁界用コイルを巻き付けることもできる。
図6の(イ)は鉄芯コイル付き磁気インピーダンス効果ユニットの一例を示す側面図、図6の(ロ)は同じく底面図、図6の(ハ)は図6の(ロ)におけるハ−ハ断面図である。
図6において、100は基板チップであり、例えばセラミックス板を使用できる。101は基板片の片面に設けた電極であり、磁気インピーダンス効果素子接続用突部102を備えている。この電極は導電ペースト、例えば銀ペーストの印刷・焼付けにより設けることができる。1xは電極101,101の突部102,102間にはんだ付けや溶接により接続した磁気インピーダンス効果素子であり、前記した通り零磁歪乃至負磁歪のアモルファスワイヤ、アモルファスリボン、スパッタ膜等を使用できる。103は鉄やフェライト等からなるC型鉄芯、6xはC型鉄芯に巻装した負帰還用コイル、7xは同じくバイアス磁界用コイルであり、磁気インピーダンス効果素子1xとC型鉄芯103とでループ磁気回路を構成するように、C型鉄芯103の両端を基板片100の他面に接着剤等で固定してある。鉄芯材料としては、残留磁束密度の小さい磁性体であればよく、例えば、パーマロイ、フェライト、鉄、アモルファス磁性合金の他、磁性体粉末混合プラスチック等を挙げることができる。
The negative feedback coil and the bias magnetic field coil can be wound around the magneto-impedance effect element. Further, as shown in FIG. 6, a negative feedback coil and a bias magnetic field coil can be wound around an iron core constituting a magneto-impedance effect element and a loop magnetic circuit.
6 (a) is a side view showing an example of a magneto-impedance effect unit with an iron core coil, FIG. 6 (b) is a bottom view, and FIG. 6 (c) is a diagram of FIG. 6 (b). It is sectional drawing.
In FIG. 6, reference numeral 100 denotes a substrate chip, for example, a ceramic plate can be used. Reference numeral 101 denotes an electrode provided on one side of the substrate piece, and includes a magneto-impedance effect element connecting projection 102. This electrode can be provided by printing and baking a conductive paste, for example, a silver paste. 1x is a magneto-impedance effect element connected between the protrusions 102 and 102 of the electrodes 101 and 101 by soldering or welding, and an amorphous wire, amorphous ribbon, sputtered film, or the like having zero or negative magnetostriction can be used as described above. 103 is a C-type iron core made of iron or ferrite, 6x is a negative feedback coil wound around the C-type iron core, 7x is a bias magnetic field coil, and the magneto-impedance effect element 1x and the C-type iron core 103 The both ends of the C-type iron core 103 are fixed to the other surface of the substrate piece 100 with an adhesive or the like so as to constitute a loop magnetic circuit. The iron core material may be a magnetic material having a small residual magnetic flux density. Examples thereof include permalloy, ferrite, iron, amorphous magnetic alloy, magnetic powder mixed plastic, and the like.

本発明に係る磁気インピーダンス効果センサにおいて、負帰還動作は出力特性の直線化や動作の安定化に有効である。この負帰還は省略することも可能である。   In the magneto-impedance effect sensor according to the present invention, the negative feedback operation is effective for linearizing output characteristics and stabilizing the operation. This negative feedback can be omitted.

本発明に係る鉄系構造物の検査方法は、例えば送電線の鉄塔として使用されている鉄系パイプや鉄系輸送管の内面の腐食、減肉、傷等の欠陥、コンクリート内に埋設された鉄系パイプの腐食、減肉、傷等の欠陥、そのパイプの埋設位置の検出、鉄金コンクリートの鉄筋の腐食、減肉、傷等の欠陥、その鉄筋の埋設位置の検出、等に使用できる。   The method for inspecting an iron-based structure according to the present invention includes, for example, corrosion of an inner surface of an iron-based pipe or an iron-based transport pipe used as a steel tower of a power transmission line, defects such as thinning, scratches, etc., embedded in concrete. It can be used to detect defects such as corrosion, thinning and flaws in steel pipes, detection of the buried position of the pipe, corrosion of steel bars in steel-reinforced concrete, thinning and defects such as flaws, detection of the position of the reinforcing bar. .

本発明に係る鉄系構造物の検査方法に使用する磁気インピーダンス効果センサの一例を示す回路図である。It is a circuit diagram which shows an example of the magnetic impedance effect sensor used for the inspection method of the iron-type structure which concerns on this invention. 本発明に係る鉄系構造物の検査方法におけるバイアス磁界−センサ出力特性を示す図面である。It is drawing which shows the bias magnetic field-sensor output characteristic in the inspection method of the iron system structure concerning the present invention. 本発明に係る鉄系構造物の検査方法における欠陥通過時のバイアス磁界−センサ出力特性を示す図面である。It is drawing which shows the bias magnetic field-sensor output characteristic at the time of the defect passage in the inspection method of the iron system structure concerning the present invention. 本発明に係る磁気インピーダンス効果センサの一実施例を示す回路図である。It is a circuit diagram which shows one Example of the magneto-impedance effect sensor based on this invention. 図3−1の磁気インピーダンス効果センサの補正回路の一例を示す図面である。It is drawing which shows an example of the correction circuit of the magneto-impedance effect sensor of FIGS. 本発明に係る磁気インピーダンス効果センサの上記とは別の実施例を示す回路図である。It is a circuit diagram which shows the Example different from the above of the magneto-impedance effect sensor based on this invention. 本発明に係る磁気インピーダンス効果センサの上記とは別の実施例を示す回路図である。It is a circuit diagram which shows the Example different from the above of the magneto-impedance effect sensor based on this invention. 図5−1の磁気インピーダンス効果センサの補正回路の一例を示す図面である。It is drawing which shows an example of the correction circuit of the magneto-impedance effect sensor of FIGS. 本発明に係る磁気インピーダンス効果センサにおいて使用される磁気インピーダンス効果ユニットを示す図面である。1 is a diagram illustrating a magneto-impedance effect unit used in a magneto-impedance effect sensor according to the present invention. 磁気インピーダンス効果素子の出力特性を示す図面である。It is drawing which shows the output characteristic of a magneto-impedance effect element. 従来の磁気インピーダンス効果センサを示す図面である。1 is a diagram illustrating a conventional magneto-impedance effect sensor. 従来の磁気インピーダンス効果センサにおける各所での入・出力波形を示す図面である。It is drawing which shows the input / output waveform in various places in the conventional magnetic impedance effect sensor.

符号の説明Explanation of symbols

1 磁気インピーダンス効果素子
1a 磁気インピーダンス効果素子
1b 磁気インピーダンス効果素子
2 励磁電流源
3 検波回路
3a 検波回路
3b 検波回路
4 増幅器または差動増幅器
5 検出出力端
6 負帰還磁界用コイル
6a 負帰還磁界用コイル
6b 負帰還磁界用コイル
7 バイアス磁界用コイル
7a バイアス磁界用コイル
7b バイアス磁界用コイル
8 補正回路
DESCRIPTION OF SYMBOLS 1 Magnetoimpedance effect element 1a Magnetoimpedance effect element 1b Magnetoimpedance effect element 2 Excitation current source 3 Detection circuit 3a Detection circuit 3b Detection circuit 4 Amplifier or differential amplifier 5 Detection output terminal 6 Negative feedback magnetic field coil 6a Negative feedback magnetic field coil 6b Negative feedback magnetic field coil 7 Bias magnetic field coil 7a Bias magnetic field coil 7b Bias magnetic field coil 8 Correction circuit

Claims (6)

磁気インピーダンス効果素子にバイアス磁界用コイルを付設し、その素子の出力を増幅器で増幅して検出出力を得る磁気インピーダンス効果センサを、磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする鉄系構造物の検査方法。A magnetic field effect coil is attached to the magneto-impedance effect element, the output of the element is amplified by an amplifier, and a detection output is obtained. Travel along the iron-based structure while applying the superimposed bias magnetic field. During this travel, the bias magnetic field passes through the iron-based structure and the iron-based structure passes as part of the magnetic circuit, based on the defects in the iron-based structure. A method for inspecting an iron-based structure, wherein the detection output is changed by changing a bias magnetic field passing through a magneto-impedance effect element, and a defect in the iron-based structure is detected from the change. 磁気インピーダンス効果素子にバイアス磁界用コイルを付設し、その素子の出力を増幅器で増幅して検出出力を得、増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを、磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする鉄系構造物の検査方法。A bias magnetic field coil is attached to the magneto-impedance effect element, the output of the element is amplified by an amplifier to obtain a detection output, and an offset signal of the amplifier output is used as an input signal to generate a compensation signal to cancel the offset. A magneto-impedance effect sensor provided with a correction circuit for applying a compensation signal to the amplifier as an input for erasing the offset is supplied with a bias magnetic field in which an excitation current is applied to the magneto-impedance effect element and an AC component is superimposed on a DC component. While running, run along the iron-based structure, and during this travel, pass the bias magnetic field to the iron-based structure, pass the iron-based structure as part of the magnetic circuit, and install the magneto-impedance effect element based on the defects of the iron-based structure The detection output is changed by changing the bias magnetic field that passes through, and the defect of the iron-based structure is detected from this change. Inspection method of an iron-based structure, wherein. 一対の磁気インピーダンス効果素子のそれぞれにバイアス磁界用コイルを付設し、両素子の出力を差動増幅器で増幅して検出出力を得、差動増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする鉄系構造物の検査方法。A bias magnetic field coil is attached to each of the pair of magneto-impedance effect elements, and the output of both elements is amplified by a differential amplifier to obtain a detection output, and the offset of the differential amplifier output is used as an input signal to cancel the offset. A magneto-impedance effect sensor provided with a correction circuit that generates a compensation signal and applies this compensation signal as an input for erasing the offset to the amplifier supplies an exciting current to the magneto-impedance effect element and alternating current into a DC component. Run along an iron-based structure while applying a bias magnetic field with superimposed components, and during this run, pass the bias magnetic field through the iron-based structure and pass the iron-based structure as part of the magnetic circuit. Based on this, the detection output is changed by changing the bias magnetic field passing through the magneto-impedance effect element. Inspection method of an iron-based structure, characterized in that to detect the defect. 一対の磁気インピーダンス効果素子のそれぞれにバイアス磁界用コイルを付設し、両素子の出力を差動増幅器で増幅して検出出力を得、差動増幅器の両入力端子間に、差動増幅器出力のオフセットを入力信号としてそのオフセットを打ち消すための補償用信号を発生させ、この補償用信号を前記増幅器に前記オフセットを消去するための入力として加える補正回路を設けた磁気インピーダンス効果センサを磁気インピーダンス効果素子に励磁電流を通電すると共に直流分に交流分を重畳したバイアス磁界をかけながら鉄系構造物に沿い走行させ、この走行中、バイアス磁界を鉄系構造物に、鉄系構造物を磁気回路の一部として通過させ鉄系構造物の欠陥に基づき磁気インピーダンス効果素子を通るバイアス磁界を変化させて前記検出出力を変化させ、この変化から鉄系構造物の欠陥を検知することを特徴とする鉄系構造物の検査方法。A bias magnetic field coil is attached to each of a pair of magneto-impedance effect elements, and the output of both elements is amplified by a differential amplifier to obtain a detection output, and the differential amplifier output offset between both input terminals of the differential amplifier A magneto-impedance effect sensor provided with a correction circuit for generating a compensation signal for canceling the offset as an input signal and providing the compensation signal as an input for erasing the offset to the amplifier While applying an exciting current and applying a bias magnetic field in which the AC component is superimposed on the DC component, the vehicle travels along the iron-based structure. During this traveling, the bias magnetic field is applied to the iron-based structure, and the iron-based structure is applied to the magnetic circuit. The detection output is changed by changing the bias magnetic field passing through the magneto-impedance effect element based on the defect of the iron-based structure. Is allowed, the inspection method of the iron-based structures and detecting defects in iron-based structure from this change. 磁気インピーダンス効果センサの補正回路に、増幅器または差動増幅器出力のオフセットが所定値に達したときに補償用出力を発生する手段を付設したことを特徴とする請求項2〜4何れか記載の鉄系構造物の検査方法。5. The iron according to claim 2, wherein means for generating a compensation output when the offset of the amplifier or differential amplifier output reaches a predetermined value is added to the correction circuit of the magneto-impedance effect sensor. Inspection method for system structures. 磁気インピーダンス効果センサの増幅器または差動増幅器出力のオフセットをn倍(n>1)して補正回路に入力する手段を付設したことを特徴とする請求項5記載の鉄系構造物の検査方法。6. The method of inspecting an iron-based structure according to claim 5, further comprising means for multiplying an offset of an amplifier or differential amplifier output of the magneto-impedance effect sensor by n (n> 1) and inputting the offset to a correction circuit.
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