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JP4880433B2 - Chip-shaped solid electrolytic capacitor - Google Patents
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JP4880433B2 - Chip-shaped solid electrolytic capacitor - Google Patents

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JP4880433B2
JP4880433B2 JP2006325536A JP2006325536A JP4880433B2 JP 4880433 B2 JP4880433 B2 JP 4880433B2 JP 2006325536 A JP2006325536 A JP 2006325536A JP 2006325536 A JP2006325536 A JP 2006325536A JP 4880433 B2 JP4880433 B2 JP 4880433B2
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村上  順一
伊亨 山添
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Nichicon Corp
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Description

本発明は、チップ状固体電解コンデンサに関し、特に下面電極構造のチップ状固体電解コンデンサに関するものである。   The present invention relates to a chip-shaped solid electrolytic capacitor, and more particularly to a chip-shaped solid electrolytic capacitor having a bottom electrode structure.

携帯電話をはじめとする、電子機器の小形化とデジタル化にともなう多機能化の流れは、年々複雑な演算処理を行う半導体を薄型化/小形化と高集積化を繰り返し、周辺に搭載するチップ部品にも「小形化」と「高性能化」という、相反する性能が要求されている。   The trend toward multi-functionalization associated with the downsizing and digitization of electronic devices such as mobile phones is a chip that is mounted on the periphery by repeatedly reducing the thickness / miniaturization and high integration of semiconductors that perform complex arithmetic processing year by year. Parts are also required to have conflicting performances of "miniaturization" and "high performance".

なかでも、コンデンサには、セラミックコンデンサが多用されるが、大容量を必要とされる回路には、タンタルなどの弁作用金属を用いたチップ状固体電解コンデンサが用いられる。   Among them, a ceramic capacitor is often used as the capacitor, but a chip-shaped solid electrolytic capacitor using a valve metal such as tantalum is used for a circuit that requires a large capacity.

一般的に、このチップ状固体電解コンデンサは、リードフレームを骨格に持つパッケージのモールドタイプが主流である(例えば、特許文献1参照)。   In general, the chip-type solid electrolytic capacitor is mainly a mold type of a package having a lead frame as a skeleton (see, for example, Patent Document 1).

しかし、上述のとおり、電子機器の小形化により、大容量を保持したままで、より小形のパッケージが要求されてきており、リードフレーム骨格を排除して体積効率を向上させた下面電極構造のチップ状固体電解コンデンサが提案されている(例えば、特許文献2参照)。   However, as described above, due to downsizing of electronic equipment, there is a demand for a smaller package while maintaining a large capacity, and a chip with a bottom electrode structure that improves the volume efficiency by eliminating the lead frame skeleton. A solid electrolytic capacitor has been proposed (see, for example, Patent Document 2).

この下面電極構造のチップ状固体電解コンデンサは、陽極導出リードを具備し、誘電体酸化皮膜、固体電解質層および陰極引出層を形成したコンデンサ素子と、コンデンサの電極となる電極基板と、外装樹脂とを有し、
電極基板が、複数の貫通孔または切欠き部を有する絶縁層と、貫通孔または切欠き部に配置される陽極導電板および陰極導電板と、該導電板が接続される外部電極とを有する構造で、優れた体積効率で高容量を実現し、リードフレームによる電極引き回しでの特性劣化がなく、優れたESR(等価直列抵抗)特性を有するものである。
The chip-shaped solid electrolytic capacitor having the bottom electrode structure includes a capacitor element having an anode lead, a dielectric oxide film, a solid electrolyte layer, and a cathode lead layer, an electrode substrate that serves as a capacitor electrode, an exterior resin, Have
A structure in which an electrode substrate has an insulating layer having a plurality of through holes or notches, an anode conductive plate and a cathode conductive plate disposed in the through holes or notches, and an external electrode to which the conductive plates are connected Thus, a high capacity is realized with an excellent volumetric efficiency, there is no deterioration in characteristics due to electrode routing by a lead frame, and an excellent ESR (equivalent series resistance) characteristic is obtained.

携帯電話に代表されるモバイルデジタル機器において、上記の下面電極構造のチップ状固体電解コンデンサの主流サイズは、1608サイズ(長さL1.6mm×幅W0.8mm×高さH0.8mm)であるが、冒頭で述べたとおり、年々小形化と高性能化が進んでいるため、高容量の領域で2012サイズ(長さL2.0mm×幅W1.2mm×高さH0.8mm)や3216サイズ(長さL3.2mm×幅W1.6mm×高さH1.0mm)の需要が増えてきている。   In mobile digital devices typified by mobile phones, the mainstream size of the chip-shaped solid electrolytic capacitor having the bottom electrode structure is 1608 size (length L 1.6 mm × width W 0.8 mm × height H 0.8 mm). As mentioned at the beginning, since miniaturization and high performance are progressing year by year, 2012 size (length L2.0 mm × width W1.2 mm × height H0.8 mm) and 3216 size (long) (L 3.2 mm x W 1.6 mm x H 1.0 mm) is increasing.

特開昭63−115324JP 63-115324 A 特開2002−110458JP2002-110458

上記の下面電極構造のチップ状固体電解コンデンサは、コンデンサ素子を多数個並べて一括で外装樹脂成形を行い、ダイヤモンドカッターなどにより個片化して製造する工法が多く用いられ、一括樹脂成形を行うゆえ、特に外装樹脂の材料設計は、そのフィラー粒径をより高精度に管理し、さらに注入性を良くして樹脂の未充填部分の発生を防止する設計を要する。   Since the chip-shaped solid electrolytic capacitor having the above-mentioned bottom electrode structure is formed by arranging a large number of capacitor elements and performing exterior resin molding in a lump, and a method of manufacturing by dividing into pieces with a diamond cutter or the like is often used. In particular, the material design of the exterior resin requires a design in which the filler particle size is managed with higher accuracy, and the injectability is improved to prevent generation of an unfilled portion of the resin.

一般的に、チップ部品に用いられる外装樹脂は、トランスファーモールドで形成され、これに使用するモールド樹脂のフィラーは、50〜100μm程度の球状や破砕状のものが使用される。また、樹脂の成形性を表す特性の一つであるスパイラルフローは、約30〜90cm(175℃)のものが使用される。   Generally, the exterior resin used for the chip component is formed by transfer molding, and the filler of the mold resin used for this is a spherical or crushed one having a size of about 50 to 100 μm. Moreover, the spiral flow which is one of the characteristics showing the moldability of the resin is about 30 to 90 cm (175 ° C.).

しかし、当然のことながら大形のキャビティーをトランスファーモールドする際、外装樹脂の肉厚が薄い場合には、大形になるほどモールド成形性が問題になる。即ち、広範囲に安定した注入性を確保する必要がある。
特に、高容量を要求するチップ状固体電解コンデンサは、内蔵するコンデンサ素子のサイズを極限にまで拡大し、薄肉の外装樹脂層を形成するよう設計しており、従来より成形性の優れた、細かなフィラー径で粒度分布をコントロールでき、かつスパイラルフローの長いモールド樹脂を採用せざるを得ず、特殊な樹脂となることからその材料費は高価なものであった。
However, as a matter of course, when a large cavity is transfer-molded, if the thickness of the exterior resin is thin, the moldability becomes a problem as the size of the outer resin increases. That is, it is necessary to ensure a stable injection property over a wide range.
In particular, chip-shaped solid electrolytic capacitors that require high capacity are designed to expand the size of the built-in capacitor element to the limit and form a thin outer resin layer, and are finer and more compact than before. The particle size distribution can be controlled with a large filler diameter, and a mold resin with a long spiral flow has to be adopted, and the material cost is expensive because it becomes a special resin.

よって、上述の下面電極構造のチップ状固体電解コンデンサの原価は、極めて高価にならざるを得なかった。   Therefore, the cost of the above-mentioned chip-shaped solid electrolytic capacitor having the bottom electrode structure has to be extremely high.

本発明は、上記に鑑み、一括生産方式を採用する下面電極構造のチップ状固体電解コンデンサにおいて、低コストでかつ安定したトランスファーモールドで外装樹脂を成形することができる構造を提供することを目的とする。   In view of the above, an object of the present invention is to provide a structure capable of molding an exterior resin with a low-cost and stable transfer mold in a chip-shaped solid electrolytic capacitor having a bottom electrode structure employing a batch production method. To do.

上記目的を達成するため、本発明に係るチップ状固体電解コンデンサは、陽極導出リードを具備し、誘電体酸化皮膜、固体電解質層および陰極引出層を順次形成してなるコンデンサ素子と、コンデンサ素子の陽極導出リードと陽極導出金属を介して接続される陽極電極、およびコンデンサ素子の陰極引出層と導電性接着剤を介して接続される陰極電極を具備した電極基板と、電極基板の下面を露出させた状態でコンデンサ素子および電極基板をパッケージングする外装樹脂と、を有し、
上記電極基板の上面で、上記コンデンサ素子の陰極引出層と上記電極基板との間に、上記コンデンサ素子の陰極引出層と上記電極基板が平行となるよう上記コンデンサ素子の陰極引出層を下側から支持する突出部を少なくとも2箇所設けている。
In order to achieve the above object, a chip-shaped solid electrolytic capacitor according to the present invention comprises an anode lead, a capacitor element formed by sequentially forming a dielectric oxide film, a solid electrolyte layer, and a cathode lead layer, An electrode substrate having an anode electrode connected via an anode lead lead and an anode lead metal, and a cathode electrode connected via a conductive adhesive to the cathode lead layer of the capacitor element, and the lower surface of the electrode substrate exposed An exterior resin for packaging the capacitor element and the electrode substrate in a
On the upper surface of the electrode substrate, the cathode lead layer of the capacitor element is placed from below so that the cathode lead layer of the capacitor element and the electrode substrate are parallel between the cathode lead layer of the capacitor element and the electrode substrate. At least two protrusions to be supported are provided.

なお、上記突出部は、レジスト層で構成されることが好ましい。この場合、突出部を簡単かつ位置精度良く形成することができる。   In addition, it is preferable that the said protrusion part is comprised with a resist layer. In this case, the protruding portion can be formed easily and with high positional accuracy.

上記構成によれば、コンデンサ素子の陰極引出層と電極基板との間の一部に設けた突出部により均一な空間が生じ、トランスファーモールドによる外装樹脂注入がスムーズにでき、未充填不良を防止できるので、特殊かつ細かなフィラー径で粒度分布をコントロールしたモールド樹脂を使用せずともチップ状固体電解コンデンサを製造することが可能となり、安価でかつ量産性に優れたチップ状固体電解コンデンサを提供することができる。   According to the above configuration, a uniform space is generated by the protrusion provided in a part between the cathode lead layer of the capacitor element and the electrode substrate, so that exterior resin injection by transfer molding can be performed smoothly and unfilled defects can be prevented. Therefore, it becomes possible to manufacture a chip-shaped solid electrolytic capacitor without using a mold resin whose particle size distribution is controlled with a special and fine filler diameter, and provides a chip-shaped solid electrolytic capacitor that is inexpensive and excellent in mass productivity. be able to.

[比較例1]
図1は本発明の比較例1に係るチップ状固体電解コンデンサの断面図である。図1において、1はコンデンサ素子、2は外装樹脂、3は電極基板である。
[ Comparative Example 1]
FIG. 1 is a cross-sectional view of a chip-shaped solid electrolytic capacitor according to Comparative Example 1 of the present invention. In FIG. 1, 1 is a capacitor element, 2 is an exterior resin, and 3 is an electrode substrate.

コンデンサ素子1は、タンタル粉末に陽極導出リードを埋設し、所定の形状にプレス成形後、焼結してタンタル金属の多孔質体とし、多孔質体の表面に誘電体酸化皮膜層を形成し、コンデンサ陽極体を作製した後、固体電解質層を形成し、さらにカーボン層および銀層から成る陰極引出層を形成して作製されている。   Capacitor element 1 has anode lead leads embedded in tantalum powder, press-molded into a predetermined shape, sintered to form a porous body of tantalum metal, and a dielectric oxide film layer is formed on the surface of the porous body. After the capacitor anode body is manufactured, a solid electrolyte layer is formed, and a cathode lead layer composed of a carbon layer and a silver layer is further formed.

電極基板3は、本コンデンサの電極となる基板である。それゆえ、この電極基板3には、予めコンデンサ素子1の陽極導出リードと陽極導出金属6を介して接続される陽極電極4と、コンデンサ素子1の陰極引出層と導電性接着剤9を介して接続される陰極電極5とが備えられている。   The electrode substrate 3 is a substrate that serves as an electrode of the capacitor. Therefore, the electrode substrate 3 is connected to the anode electrode 4 connected in advance via the anode lead of the capacitor element 1 and the anode lead metal 6, the cathode lead layer of the capacitor element 1 and the conductive adhesive 9. A cathode electrode 5 to be connected is provided.

外装樹脂2は、電極基板3の下面を露出させた状態でコンデンサ素子1および電極基板3をパッケージングしている。すなわち、本比較例1のチップ状固体コンデンサは、下面電極構造を有している。
The exterior resin 2 packages the capacitor element 1 and the electrode substrate 3 with the lower surface of the electrode substrate 3 exposed. That is, the chip-shaped solid capacitor of Comparative Example 1 has a bottom electrode structure.

特に、本比較例1では、孔あけ加工したポリイミドフィルムを絶縁層として、厚さ18μmの圧延銅板を配置しエッチング加工して陽極電極4および陰極電極5を形成した後、銅メッキにより上記陽極電極4および陰極電極5と電気的に接続する導通体を上記絶縁層の孔あき部へ埋め込み、さらにニッケルメッキと錫合金メッキとで陽極導電板および陰極導電板と導通体の露出面を処理して厚さ80μmの電極基板3を形成している。
In particular, in the present comparative example 1, a rolled copper plate having a thickness of 18 μm is disposed as an insulating layer using a perforated polyimide film as an insulating layer, etched to form the anode electrode 4 and the cathode electrode 5, and then the anode electrode is formed by copper plating 4 and the conductive body electrically connected to the cathode electrode 5 are embedded in the perforated portion of the insulating layer, and the exposed surfaces of the anode conductive plate and the cathode conductive plate and the conductive body are further processed by nickel plating and tin alloy plating. An electrode substrate 3 having a thickness of 80 μm is formed.

次に、上記コンデンサ素子1の陽極導出リードと陰極引出層とをそれぞれ陽極導出金属6と導電性接着剤9とを介し、上記電極基板3の陽極電極4および陰極電極5に接続した後、外装樹脂2で被覆し、2.0×1.2×0.8mm(2012サイズ)のチップ状固体電解コンデンサを作製している。   Next, the anode lead and the cathode lead layer of the capacitor element 1 are connected to the anode electrode 4 and the cathode electrode 5 of the electrode substrate 3 through the anode lead metal 6 and the conductive adhesive 9, respectively. A chip-shaped solid electrolytic capacitor having a size of 2.0 × 1.2 × 0.8 mm (2012 size) is produced by coating with resin 2.

上記の電極基板3とコンデンサ素子1との位置関係は、電極基板3の陽極電極4がコンデンサ素子1の陽極導出リードの下部に位置し、また電極基板3の陰極電極5がコンデンサ素子1の陰極引出層の下部に位置するように設定し、電極引き出しが最短になるよう設計している。この電極基板3に陽極電極4と陰極電極5を複数個形成し、以降の工程を複数個単位で実施して、本コンデンサは一括で生産される。   The positional relationship between the electrode substrate 3 and the capacitor element 1 is such that the anode electrode 4 of the electrode substrate 3 is positioned below the anode lead of the capacitor element 1 and the cathode electrode 5 of the electrode substrate 3 is the cathode of the capacitor element 1. It is set so as to be located below the extraction layer, and is designed so that the electrode extraction is the shortest. A plurality of anode electrodes 4 and cathode electrodes 5 are formed on the electrode substrate 3, and the subsequent processes are performed in units of a plurality of units, whereby this capacitor is produced in a batch.

さらに、電極基板3の上面において、コンデンサ素子1の陰極引出層と陽極電極4とが対向する位置周辺(陽極電極4の一部と絶縁層の一部とに跨る位置)に、厚さ50μm、幅0.2mmのレジスト層8を電極基板3の上面に形成して、コンデンサ素子1を下側から支持する突出部としている。   Further, on the upper surface of the electrode substrate 3, a thickness of 50 μm is provided around a position where the cathode lead layer of the capacitor element 1 and the anode electrode 4 face each other (a position straddling part of the anode electrode 4 and part of the insulating layer). A resist layer 8 having a width of 0.2 mm is formed on the upper surface of the electrode substrate 3 to form a protruding portion that supports the capacitor element 1 from below.

また、外装樹脂2の形成は、トランスファーモールドにより行われる。このとき使用される樹脂としては、フィラー径が50〜100μm程度の球状で、樹脂の成形性を表す特性の一つであるスパイラルフローが約50cm(175℃)のものが用いられる。   The exterior resin 2 is formed by transfer molding. As the resin used at this time, a resin having a spherical shape with a filler diameter of about 50 to 100 μm and a spiral flow of about 50 cm (175 ° C.), which is one of the characteristics representing the moldability of the resin, is used.

[実施例2]
図2は本発明の実施例2に係るチップ状固体電解コンデンサの断面図である。
[Example 2]
FIG. 2 is a cross-sectional view of a chip-shaped solid electrolytic capacitor according to Example 2 of the present invention.

本実施例2では、電極基板3の上面において、コンデンサ素子1の陰極引出層と陽極電極4とが対向する位置周辺(陽極電極4の一部と絶縁層の一部とに跨る位置)と、コンデンサ素子1の陰極引出層と陰極電極5とが対向する位置周辺(陰極電極5の一部と絶縁層の一部とに跨る位置)の2カ所へ突出部となるレジスト層8を形成した以外は、上記比較例1と同様の方法でチップ状固体電解コンデンサを作製した。
In the second embodiment, on the upper surface of the electrode substrate 3, the periphery of the position where the cathode lead layer of the capacitor element 1 and the anode electrode 4 face each other (the position straddling part of the anode electrode 4 and part of the insulating layer); Except that the resist layer 8 serving as protrusions is formed at two locations around the position where the cathode lead layer of the capacitor element 1 and the cathode electrode 5 face each other (a position straddling part of the cathode electrode 5 and part of the insulating layer). Produced a chip-shaped solid electrolytic capacitor in the same manner as in Comparative Example 1 above.

[従来例1]
図3は従来例1に係るチップ状固体電解コンデンサの断面図である。
[Conventional example 1]
FIG. 3 is a cross-sectional view of a chip-shaped solid electrolytic capacitor according to Conventional Example 1.

図3を参照して、従来例1では、電極基板3を構成する際、突出部となるレジスト層8の形成を省略し、コンデンサ素子1を上記比較例1と同様の方法にて処理して、チップ状固体電解コンデンサを作製した。
Referring to FIG. 3, in the conventional example 1, when forming the electrode substrate 3, the formation of the resist layer 8 serving as the protruding portion is omitted, and the capacitor element 1 is processed by the same method as in the comparative example 1 described above. A chip-shaped solid electrolytic capacitor was produced.

かかる従来例1において、陽極導出金属6のカット後に生じるバリ、または陽極導出金属6と陽極導出リードを接続した際の素子のねじれによりコンデンサ素子1のパッケージ内での姿勢が傾いたとき、コンデンサ素子1の下部の外装樹脂形成部分は設計値より薄い部分が生じるため、空隙7、即ち外装樹脂2の未充填が生じることとなる。この状態を図4に簡略化して示す。   In the prior art example 1, when the posture of the capacitor element 1 in the package is tilted due to burrs generated after cutting of the anode lead metal 6 or torsion of the element when the anode lead metal 6 and the anode lead are connected, the capacitor element 1 Since the lower portion of the exterior resin forming portion 1 is thinner than the design value, the gap 7, that is, the exterior resin 2 is not filled. This state is shown in a simplified manner in FIG.

[比較検討結果]
上記の実施例1および2のチップ状固体電解コンデンサに対し、上記の従来例1のチップ状固体電解コンデンサを比較対象として、各10000個作製時における外装樹脂の未充填発生率を比較した結果を表1に示す。
[Comparison results]
For the chip solid electrolytic capacitors of Examples 1 and 2 above, the comparison results of the unfilled occurrence rate of the exterior resin at the time of production of 10,000 each using the chip solid electrolytic capacitor of Conventional Example 1 as a comparison object are as follows: Table 1 shows.

Figure 0004880433
Figure 0004880433

表1に示す通り、コンデンサ素子の陰極引出層と電極基板との間の一部にレジストによる突出部を設けたことにより、特殊なモールド樹脂を使用せずとも、トランスファーモールドによる外装樹脂注入をスムーズにし、未充填不良を防止せしめることが判明した。   As shown in Table 1, by providing a protrusion with resist at a part between the cathode lead layer of the capacitor element and the electrode substrate, it is possible to smoothly inject exterior resin by transfer molding without using special molding resin. It was found that it prevents unfilled defects.

なお、本発明は上記実施例に限定されるものではない。   In addition, this invention is not limited to the said Example.

例えば、上記の実施例では、突出部となるレジスト層を電極の一部に跨る位置に形成させたが、このレジスト層を電極上または絶縁層上のいずれかに形成しても、同様の効果を得ることができる。   For example, in the above-described embodiment, the resist layer serving as the protruding portion is formed at a position straddling a part of the electrode, but the same effect can be obtained by forming this resist layer on either the electrode or the insulating layer. Can be obtained.

また、上記の実施例では、電極基板上に厚さ50μm、幅0.2mmの突出部となるレジスト層を形成した例について説明したが、一般的なモールド樹脂がコンデンサ素子と電極基板との間に安定して注入できるよう、樹脂の特性に応じてレジスト厚さを変更し、レジスト厚さを薄くする設計にすれば、高体積効率のチップ状固体電解コンデンサを得ることができる。   In the above embodiment, an example in which a resist layer serving as a protruding portion having a thickness of 50 μm and a width of 0.2 mm is formed on the electrode substrate is described. However, a general mold resin is provided between the capacitor element and the electrode substrate. If the resist thickness is changed according to the characteristics of the resin so that the resist thickness is reduced so that it can be stably injected, a chip-shaped solid electrolytic capacitor with high volume efficiency can be obtained.

さらに、上記の実施例では、コンデンサ素子の陰極引出層と電極基板との間の一部にレジスト形成による突出部を設けた構造としたが、ポリイミドの絶縁層にポリイミド樹脂で突出層を設ける場合や、電極基板の陽極電極および陰極電極の表面にメッキを積んで突部を設けても、同様の効果を得ることができる。   Furthermore, in the above embodiment, a protruding portion is formed by resist formation in a part between the cathode lead layer of the capacitor element and the electrode substrate. However, when the protruding layer is formed of polyimide resin on the polyimide insulating layer Alternatively, the same effect can be obtained even if the protrusions are provided by plating the surfaces of the anode electrode and the cathode electrode of the electrode substrate.

その他、本明細書に添付した特許請求の範囲内での種々の設計変更および修正を加え得ることは勿論である。   It goes without saying that various design changes and modifications can be made within the scope of the claims attached to the present specification.

本発明では、低コストでかつ安定したトランスファーモールドで外装樹脂を成形することができるゆえ、チップ状固体電解コンデンサ、特に下面電極構造のチップ状固体電解コンデンサとして有用である。   The present invention is useful as a chip-shaped solid electrolytic capacitor, particularly a chip-shaped solid electrolytic capacitor having a bottom electrode structure, because the exterior resin can be molded at a low cost with a stable transfer mold.

本発明の比較例1に係るチップ状固体電解コンデンサの断面図である。It is sectional drawing of the chip-shaped solid electrolytic capacitor which concerns on the comparative example 1 of this invention. 本発明の実施例2に係るチップ状固体電解コンデンサの断面図である。It is sectional drawing of the chip-shaped solid electrolytic capacitor which concerns on Example 2 of this invention. 従来例1に係るチップ状固体電解コンデンサの断面図である。It is sectional drawing of the chip-shaped solid electrolytic capacitor which concerns on the prior art example 1. FIG. 従来例1に係るチップ状固体電解コンデンサにおいて外装樹脂未充填領域が生じるメカニズムを説明するための図である。It is a figure for demonstrating the mechanism in which an exterior resin unfilled area | region arises in the chip-shaped solid electrolytic capacitor which concerns on the prior art example 1. FIG.

符号の説明Explanation of symbols

1 コンデンサ素子
2 外装樹脂
3 電極基板
4 陽極電極
5 陰極電極
6 陽極導出金属
7 空隙
8 レジスト層(突出部)
9 導電性接着剤
DESCRIPTION OF SYMBOLS 1 Capacitor element 2 Exterior resin 3 Electrode substrate 4 Anode electrode 5 Cathode electrode 6 Anode lead-out metal 7 Void 8 Resist layer (protrusion part)
9 Conductive adhesive

Claims (1)

陽極導出リードを具備し、誘電体酸化皮膜、固体電解質層および陰極引出層を順次形成してなるコンデンサ素子と、
コンデンサ素子の陽極導出リードと陽極導出金属を介して接続される陽極電極、およびコンデンサ素子の陰極引出層と導電性接着剤を介して接続される陰極電極を具備した電極基板と、
電極基板の下面を露出させた状態でコンデンサ素子および電極基板をパッケージングする外装樹脂と、を有し、
上記電極基板の上面で、上記コンデンサ素子の陰極引出層と上記電極基板との間に、上記コンデンサ素子の陰極引出層と上記電極基板が平行となるよう上記コンデンサ素子の陰極引出層を下側から支持する突出部を少なくとも2箇所設けていることを特徴とするチップ状固体電解コンデンサ。
A capacitor element comprising an anode lead and having a dielectric oxide film, a solid electrolyte layer, and a cathode lead layer sequentially formed;
An electrode substrate including an anode lead connected to an anode lead of the capacitor element and an anode electrode connected via an anode lead metal; and a cathode electrode connected to the cathode lead layer of the capacitor element via a conductive adhesive;
An exterior resin for packaging the capacitor element and the electrode substrate with the lower surface of the electrode substrate exposed;
On the upper surface of the electrode substrate, the cathode lead layer of the capacitor element is placed from below so that the cathode lead layer of the capacitor element and the electrode substrate are parallel between the cathode lead layer of the capacitor element and the electrode substrate. A chip-shaped solid electrolytic capacitor, characterized in that at least two protruding portions to be supported are provided.
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JP5167014B2 (en) * 2008-07-29 2013-03-21 ローム株式会社 Solid electrolytic capacitor
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