JP4882476B2 - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high reliability semiconductor light emitting device which avoids the deterioration of the bonding performance of a wire bond caused by a die bond resin flow even in a compact semiconductor device with a die bonding adhesive material disposed extremely closely to a wire bond zone. <P>SOLUTION: The method of manufacturing a semiconductor device comprises a first step of providing a bump on a conductor, a second step of settling a resin-containing element fixing adhesive material at the disposed bump side of the conductor, and a third step of connecting a conductive wire to the bump. The semiconductor light emitting device comprises a conductor, a bump provided on the conductor, an element fixing adhesive material settled on the conductor and a conductive wire connected to the bump. The bump is connected to the conductive wire above the adhesive material. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

  The present invention relates to a light-emitting device using a semiconductor element and a light-receiving device used for an optical sensor, and more particularly to a small light-emitting device used for a backlight of a liquid crystal display, various indicators, and the like.

  Conventionally, a semiconductor light-emitting device known as a surface-mount package is a method in which a conductor wiring is provided on a substrate such as glass epoxy by pattern formation, and a light-emitting element is die-bonded on the conductor wiring via an adhesive, The light emitting element and the conductor wiring are electrically connected with a wire such as the like, and finally the periphery of the light emitting element is covered with a translucent resin.

JP 2004-253745 A

  However, when trying to reduce the size of a conventional semiconductor device, the distance between the die bond portion and the wire bond portion is shortened, and an adhesive for die bonding is disposed at a position very close to the wire bond portion.

  In such a case, if the adhesive spreads over the wire bond portion, it is difficult to wire bond the metal wire on the adhesive containing resin, and there are many cases where the connection between the wire and the conductor cannot be obtained. Also, when wire bonding is performed, the bonding strength is weak and the wire bond may be peeled off due to thermal stress or the like.

  Accordingly, the present invention provides a semiconductor device in which the bonding property of the wire bond is lowered due to the flow of the die bond resin even in the case of a small semiconductor device in which the adhesive for die bonding is disposed at a position very close to the wire bond portion. The object is to provide a highly reliable semiconductor light emitting device.

In order to achieve the above object, a method for manufacturing a semiconductor device according to the present invention includes a conductor formed on an insulating substrate or a conductor formed in an opening of a concave ceramic package. A method for manufacturing a semiconductor device , comprising: a first step of providing a bump on a conductor; and an element including a resin in the conductor on the side where the bump of the conductor is disposed after the first step. The method includes a second step of placing a fixing adhesive and further disposing an element on the adhesive, and a third step of connecting a conductive wire to the bump. The second step is viewed contains a step of placing the adhesive on a portion of the bump, the conductive wire is connected to the site that was exposed from the adhesive of the bump.

The second step pressurizes the adhesive in the device, it is preferable that the adhesive material comprising the step of extending a portion of the bump.

  The third step preferably includes a step of connecting the bump and the element with the conductive wire.

Furthermore, it is preferable to include a step of covering at least a part of the adhesive and the element with a resin.

The semiconductor device according to the present invention is a semiconductor device in which a conductor is formed on an insulating substrate, or a conductor is formed in an opening of a concave ceramic package, and the conductor, A bump provided on the conductor; an adhesive for fixing an element placed on the conductor; an element disposed on the adhesive; a conductive wire connected to the bump; The bump is connected to the conductive wire above the adhesive.

  It is preferable to coat at least a part of the adhesive with a resin.

  The present invention reduces the bondability of the wire bond due to the flow of the die bond resin even in the case of a small semiconductor device in which the bonding material for die bonding is arranged at a position very close to the wire bond portion in the semiconductor device. A highly reliable semiconductor light-emitting device can be avoided.

  The best mode for carrying out the present invention will be described below. However, the modes shown below exemplify a semiconductor device for embodying the technical idea of the present invention, and the present invention does not limit the semiconductor device to the following.

  Further, the present specification by no means specifies the members shown in the claims to the members of the embodiments. The dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the description unless otherwise specified. It's just an example. Note that the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation. Further, in the following description, the same name and reference sign indicate the same or the same members, and detailed description will be omitted as appropriate.

  Even in the case of a small semiconductor device where the bonding material for die bonding is located very close to the wire bonding part, it avoids a decrease in wire bondability due to the flow of die bonding resin, and is a highly reliable semiconductor In order to provide a light-emitting device, the present inventors have made various studies.

  As a result, after providing bumps on the conductor, an adhesive containing resin for fixing the element is placed on the side of the conductor where the bumps are formed, and a conductive wire is connected to the bumps. It came to solve the problem.

  Hereinafter, a method for manufacturing a semiconductor device according to this embodiment will be described with reference to the drawings.

  FIG. 1 is a diagram showing an example of a method for manufacturing a semiconductor device according to this embodiment.

  First, bumps 109 are provided on the conductor 102 by using a capillary 108 and the like and a gold wire 105 (FIGS. 1a and 1b). Next, the adhesive 110 is placed on the side of the conductor 102 where the bumps are provided (FIG. 1c). Here, the side where the bumps are provided means a portion including a portion where the adhesive material spreads. Then, the semiconductor element 103 is disposed on the placed adhesive, and the electrodes on the upper surface of the semiconductor element and the bumps 109 are connected by a method such as wire bonding (FIGS. 1d and e). The wire may be connected either before or after placing the adhesive 110 as long as the bump is provided.

  The wire connected to the bump 109 may be a wire connecting a semiconductor element fixed by the adhesive 110, or a wire connecting another conductor or another semiconductor element.

  Further, as shown in FIG. 1f, when the depression 113 is formed at the interface between the bump and the wire, the adhesion to the sealing resin is improved when the semiconductor device is sealed with the sealing resin. Can do.

  In this way, when die-bonding an element via an adhesive, a bump is formed on the conductor before placing the adhesive, and the portion where the wire is connected in advance above the place where the wire bond is desired is the conductor. By providing it separately, even in the case of a small semiconductor device in which the adhesive is disposed at a location very close to the wire bond portion, the portion exposed from the adhesive of the bump is connected to the wire. Thus, conduction can be achieved without being affected by the adhesive.

  In addition, according to the method for manufacturing a semiconductor device of this embodiment, even if the material or surface state is not capable of direct wire bonding or is difficult to perform, reliable conduction is obtained as long as the material can provide bumps by ball bonding. Can do.

  In general, in wire bonding, the shape of the wire in the connection portion is different between the primary side and the secondary side, and the secondary side is more difficult to connect than the primary side. In particular, if the metal film on the connection surface on the secondary side is thin or inferior, ultrasonic energy does not propagate effectively, and there is a possibility that reliable bonding cannot be performed.

  However, if a bump is formed by ball bonding in the manner of primary bonding, the secondary side when the element and the bump are connected can be bonded on the bump, so that the contact area between the wire and the bump is small. As a result, the energy of the ultrasonic wave propagates effectively and a reliable connection can be established, and a highly reliable semiconductor device can be provided.

  Moreover, it is preferable that the said 2nd process includes the process of arrange | positioning the said adhesive material in a part of said pump.

  By including this step, a small semiconductor device can be provided even when the adhesive is spread to the wire bond portion. According to this embodiment, even if the adhesive is disposed up to the wire bond portion, that is, the bump portion, by exposing at least a part of the bump, conduction can be achieved at the exposed portion. A small semiconductor device can be provided.

  Moreover, it is preferable that the said 2nd process includes the process of pressurizing the said adhesive material with the said element, and extending the said adhesive material to a part of said bump.

  By doing in this way, an adhesive material can be spread in the process of fixing an element.

  The third step preferably includes a step of connecting the bump and the element with the conductive wire.

  In this case, since the element and the wire bond portion that connects the element can be arranged at extremely close positions, a further smaller semiconductor device can be provided. Since the length of the wire can be shortened, it is possible to reduce the force applied to the wire and to prevent the wire from being broken.

  Moreover, it is preferable to include the process of coat | covering at least one part of the said adhesive material with resin. When covering the element with resin to protect the semiconductor element from external force or moisture from the external environment, as in this embodiment, spread the adhesive not only to the bottom of the element but also to the periphery, and seal from above By covering the resin, the sealing resin can be arranged with good wettability.

  Next, a semiconductor device according to this embodiment will be described with reference to the drawings.

  FIG. 2 is a diagram showing a semiconductor device according to this embodiment.

  A conductor 202; a bump 209 provided on the conductor 202; an adhesive 210 for fixing an element placed on the conductor 202; and a conductive wire 205 connected to the bump. The bump 209 is connected to the conductive wire 205 above the adhesive 210.

  That is, since the wire bond portion is formed by the bump above the portion where the adhesive for adhering the elements is disposed, wire bonding can be performed without being affected by the adhesive.

  At this time, by connecting the bump 209 and the element fixed by the adhesive 210 with the conductive wire 205, the wire bond part and the element mounting part can be brought close to each other, and the semiconductor device can be reduced in size. Can be Moreover, since the length of a wire can be shortened, the force concerning a wire can be reduced and it can also make it difficult to break a wire.

  Further, when covering at least a part of the adhesive 210 with the resin 211, the adhesive 210 is wetted by spreading the adhesive 210 not only to the lower part of the element but also to the periphery and covering the sealing resin from above. It can be arranged with good quality.

Further, as shown in FIG. 3, by providing a concave shape in the connection portion between the bump 309 and the wire 305, the adhesion with the sealing resin can be further enhanced.
Hereafter, each structure of embodiment of this invention is explained in full detail.

[conductor]
The conductor in this embodiment is a lead frame insert-molded in resin or a conductor wiring provided on the base material.

  The material is not particularly limited as long as it is a metal that can electrically wire a semiconductor element or a light emitting element with a connecting member such as a conductive wire or bump. For example, copper, aluminum, gold, silver, tungsten, iron, nickel, etc. Examples thereof include metals, iron-nickel alloys, phosphor bronze, iron-containing copper, etc., or those having a surface plated with a metal plating film such as silver, aluminum, copper, or gold.

  The metal used as the material for the conductor wiring is preferably selected in consideration of good adhesion between the metals, so-called wettability. For example, when the Au bump is bonded to the conductor by ultrasonic die bonding, it is preferable that the conductor wiring is gold or an alloy containing gold because adhesion is improved.

[bump]
The bump in this embodiment may be formed of a metal that can connect the conductor and the conductive wire. Therefore, the material is not particularly limited as long as it can form an alloy with the wire or conductor to be used. For example, metals such as gold, copper, platinum, and aluminum, and alloys thereof.

[Adhesive]
Examples of the adhesive in this embodiment include a thermosetting resin. Examples of the thermosetting resin include an epoxy resin, a silicone resin, an acrylic resin, and an imide resin. Moreover, Ag paste, carbon paste, or the like can be used for die bonding and electrical connection.

[Conductive wire]
The conductive wire in this embodiment is required to have good ohmic properties with the conductor wiring, mechanical connectivity, electrical conductivity and thermal conductivity. Preferably ^{0.01cal / (s) (cm 2} ) (℃ / cm) or higher as heat conductivity, and more preferably ^{0.5cal / (s) (cm 2} ) (℃ / cm) or more. In consideration of workability and the like, the diameter of the conductive wire is preferably Φ10 μm or more and Φ45 μm or less. Specific examples of such conductive wires include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. Such a conductive wire can easily connect a wire bonding region formed on a conductor or a bump formed on the conductor and an electrode of a semiconductor element by a wire bonding apparatus.

  Examples according to the present invention will be described in detail below. Needless to say, the present invention is not limited to the following examples.

Example 1
As shown in FIG. 2, the semiconductor device of this embodiment is a surface-mount type semiconductor light-emitting device, and a semiconductor light-emitting element 203 is placed on a conductor 202 provided with a bump.

  The conductor 202 in this embodiment is formed on the insulating substrate 201 and is connected to the external electrode on the back surface of the semiconductor device through a through hole opened in the substrate. A bump 209 is formed on the conductor 202 by ball bonding using a gold wire.

  After the bump 209 is formed, an epoxy resin is disposed as an adhesive 210 for bonding the light emitting element 203 to the conductor 202, and the semiconductor light emitting element 203 is bonded. Since the distance between the bump and the element is as short as about 0.2 mm in the semiconductor device in this embodiment, the epoxy resin is arranged up to the vicinity of the bump 209, but the upper part of the bump 209 is exposed from the epoxy resin.

  Next, primary bonding is performed on the bonding pads of the semiconductor light emitting device 203 using the gold wire 205, and secondary bonding is performed on the bumps 209 to connect the semiconductor light emitting device and the bumps. The other electrode of the semiconductor light emitting element is also connected to the conductor by wire bonding.

  This substrate is sealed with a translucent resin 211 by a transfer mold method to obtain a semiconductor light emitting device having a lens.

  In this embodiment, a semiconductor light emitting device that emits white light is used by using a semiconductor element that emits blue light and further including a phosphor that emits yellow light in a sealing resin.

Example 2
As shown in FIG. 3, the semiconductor light emitting device of this example is a surface mount type semiconductor light emitting device in which a semiconductor element and a protective element are mounted in an opening of a base material.

  A conductor 302 is provided in the opening of the concave ceramic package 312. The conductor 302 has a tungsten surface plated with nickel and gold. As in Example 1, the gold pump 309 is formed before mounting the element, and then the Zener diode 314 is fixed to the adhesive 310 using a silver paste, and the semiconductor light emitting element 303 is fixed with an epoxy resin as the adhesive 315. ing. The bonding part of the Zener diode and the wire bond part of the semiconductor element are arranged close to each other, but since the silver paste is arranged so as to expose the upper part of the pump, it is possible to make a reliable connection at the upper part of the bump. it can.

  After the electrode of the semiconductor element and the conductor wiring are connected by wire bonding, the opening is sealed with a translucent resin 311.

  In this embodiment, the semiconductor device includes a semiconductor element and a protection element mounted in one package. With this configuration, a small and highly reliable semiconductor device can be obtained.

  The semiconductor device of the present invention can be used for a device that uses a device that requires extremely small light-emitting components, such as a backlight of a liquid crystal display.

It is a figure which shows an example of the manufacturing method of the semiconductor device concerning this invention. It is a figure which shows an example of the semiconductor device concerning this invention. It is a figure which shows an example of the semiconductor device concerning this invention.

Explanation of symbols

102, 202, 302 Conductor 103, 203, 303 Semiconductor light emitting device 105, 205 Gold wire 108 Capillary 109, 209, 309 Bump 110, 210, 310 Adhesive 113 Depression 201 Insulating substrate 211, 311 Translucent resin 312 Package 314 Zener diode 315 Adhesive

Claims (7)

A method of manufacturing a semiconductor device in which a conductor is formed on an insulating substrate, or a conductor is formed in an opening of a concave ceramic package,
A first step of providing bumps on the conductor;
After the first step, an adhesive for fixing an element including a resin is placed on the conductor on the side where the bumps of the conductor are arranged, and an element is arranged on the adhesive . Two steps;
A third step of connecting a conductive wire to the bump;
A method for manufacturing a semiconductor device, comprising: The second step is viewed contains a step of placing the adhesive on a portion of the bump, the conductive wires of the semiconductor device according to claim 1 connected to the site that was exposed from the adhesive bumps Production method. The second step pressurizes the adhesive in the device, method of manufacturing a semiconductor device according to claim 2, said adhesive material comprising the step of extending a portion of the bump.   4. The method for manufacturing a semiconductor device according to claim 1, wherein the third step includes a step of connecting the bump and the element with the conductive wire. 5. The method for manufacturing a semiconductor device according to claim 1, further comprising a step of covering at least a part of the adhesive and the element with a resin. A semiconductor device in which a conductor is formed on an insulating substrate, or a conductor is formed in an opening of a concave ceramic package,
A conductor;
A bump provided on the conductor;
An adhesive for fixing an element placed on the conductor;
An element disposed on the adhesive;
A conductive wire connected to the bump,
The semiconductor device according to claim 1, wherein the bump is connected to the conductive wire above the adhesive. The semiconductor device according to claim 6, wherein at least a part of the adhesive and the element are covered with a resin.

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