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JP4885903B2 - Support mechanism for film formation - Google Patents
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JP4885903B2 - Support mechanism for film formation - Google Patents

Support mechanism for film formation Download PDF

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JP4885903B2
JP4885903B2 JP2008103523A JP2008103523A JP4885903B2 JP 4885903 B2 JP4885903 B2 JP 4885903B2 JP 2008103523 A JP2008103523 A JP 2008103523A JP 2008103523 A JP2008103523 A JP 2008103523A JP 4885903 B2 JP4885903 B2 JP 4885903B2
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film
film formation
glass substrate
opening
tapered
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JP2009253257A (en
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陽 三好
喜信 村上
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Sumitomo Heavy Industries Ltd
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Description

本発明は、成膜装置における被成膜物の支持機構に関する。   The present invention relates to a support mechanism for an object to be formed in a film forming apparatus.

ガラス基板やシリコン基板などの被成膜物に対して成膜を行う成膜装置として、成膜面が下方に向けられた状態に被成膜物を支持して、この成膜面に対して下方からITO(インジウムすず酸化膜)やSiON(シリコン酸窒化物)といった成膜物質を付着させて成膜する装置レイアウトを持った成膜装置が知られている(例えば特許文献1)。このような成膜装置では、成膜を行う被成膜物を搭載して搬送する搬送トレイやホルダといった支持機構の内部に所定以上の広さを有する開口部を設けて成膜領域を確保すると共に、この開口部を取り囲む部分全体に段差からなる支持部を設け、被成膜物を落下させないように確実に支持して成膜を行っていた。
特開2007−211270号公報
As a film forming apparatus for forming a film on an object to be formed such as a glass substrate or a silicon substrate, the object to be formed is supported with the film forming surface facing downward. A film forming apparatus having an apparatus layout for forming a film by attaching a film forming material such as ITO (indium tin oxide film) or SiON (silicon oxynitride) from below is known (for example, Patent Document 1). In such a film forming apparatus, a film forming region is secured by providing an opening having a width larger than a predetermined width inside a support mechanism such as a transfer tray or a holder that carries and transfers a film forming object to be formed. At the same time, a support portion formed of a step is provided on the entire portion surrounding the opening, and film formation is performed by reliably supporting the deposition target so as not to fall.
JP 2007-2111270 A

しかしながら、このような成膜装置では、段差からなる支持部が成膜面の外周端部と接触して被成膜物を支持した状態で成膜を行うことから、成膜面の外周端部が未成膜部分として残存し、この未成膜部分により、成膜面全体における成膜物質の付着率が低下してしまうおそれがあった。また、被成膜物の外周端部に特定の機能を付与しようとした場合(例えば、ガラス基板の外周部にも導電性を持たせるためITOといった透明電極を外周部を含む全面に成膜する場合)には、成膜工程終了後に、上述したような未成膜部分の外周端部を切断して除去したり或いは未成膜部分に導電性物質などを印刷等の方法で改めて塗布したりする必要があった。一方、成膜面に支持部を一切接触させないよう成膜面と逆側の裏面を真空吸着などで吸着支持して被成膜物を支持する支持機構はあるものの、このような機構は支持や搬送の安定性を確保することが難しく、また装置構成が複雑となることから現実的ではなかった。   However, in such a film forming apparatus, film formation is performed in a state in which the support portion formed of a step is in contact with the outer peripheral end portion of the film forming surface and supports the film to be formed, so that the outer peripheral end portion of the film forming surface is Remains as an undeposited portion, and this undeposited portion may reduce the deposition rate of the film-forming substance on the entire deposition surface. In addition, when a specific function is to be given to the outer peripheral edge of the deposition target (for example, a transparent electrode such as ITO is formed on the entire surface including the outer peripheral portion in order to make the outer peripheral portion of the glass substrate conductive. In the case), after the film formation process is completed, it is necessary to cut and remove the outer peripheral edge of the non-film formation part as described above, or to apply a conductive material or the like again to the non-film formation part by a method such as printing. was there. On the other hand, although there is a support mechanism that supports the film by adsorbing and supporting the back surface opposite to the film formation surface by vacuum suction so that the support portion does not come into contact with the film formation surface, such a mechanism does not support or Since it is difficult to ensure the stability of conveyance and the apparatus configuration is complicated, it is not realistic.

本発明は、上記した事情に鑑みて為されたものであり、簡易な構成にもかかわらず、被成膜物における未成膜部分を低減させることができる成膜装置の支持機構を提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and provides a support mechanism for a film forming apparatus that can reduce an unfilmed portion in an object to be formed despite a simple configuration. Objective.

本発明に係る支持機構は、成膜面が下方に向けられた状態に被成膜物を支持して成膜面に成膜物質を付着堆積させる成膜装置における被成膜物の支持機構であって、成膜面と同等以上の広さの開口部を内部に有する枠体と、枠体の内方に備えられ、少なくとも開口部の周方向における一部において、開口部の縦断面を上方から下方に向けて狭めるテーパー状支持部とを備えている。このテーパー状支持部は、複数の弾性支持部材からなり、成膜面を囲む被成膜物の稜線に線接触または点接触するようになっており、複数の弾性支持部材は、各弾性支持部材が枠体から下方に向かって開口部に突出して被成膜物を複数の箇所で支持すると共に、この複数の箇所を結んで形成される領域内に被成膜物の重心が位置するように配置されることを特徴としている。
The support mechanism according to the present invention is a support mechanism for a film formation apparatus in a film formation apparatus that supports the film formation object in a state where the film formation surface is directed downward and deposits a film formation material on the film formation surface. A frame having an opening having a width equal to or larger than that of the film-forming surface, and an inner side of the frame, and at least a part of the opening in the circumferential direction has a longitudinal section above the opening. And a tapered support portion that narrows downward from the bottom . The tapered support portion is composed of a plurality of elastic support members, and is in line contact or point contact with the ridge line of the film forming object surrounding the film formation surface . The plurality of elastic support members are each elastic support member. Protrudes downward from the frame to the opening to support the film formation at a plurality of locations, and the center of gravity of the film formation is positioned within the region formed by connecting the plurality of locations. It is characterized by being arranged .

この支持機構では、テーパー状支持部が、成膜面を囲む被成膜物の稜線と線接触または点接触するようになっている。このような稜線との接触によって被成膜物を支持していることから、成膜面を直接支持しないで成膜を行うことができ、被成膜物の成膜面の略全面を成膜させることができる。この結果、テーパー状支持部といった簡易な構成にもかかわらず、被成膜物における未成膜部分を低減させて、成膜物質の付着率を上昇させることができる。また、被成膜物の外周端部などに形成され易い未成膜部分を低減できるので、被成膜物の外周端部などに特定の機能を成膜処理で持たせることができる。更に、被成膜物の稜線をテーパー状支持部で斜め下方から支持しているため、裏面の真空吸着などによる支持機構に比べて、支持や搬送の安定性を高くできる。   In this support mechanism, the tapered support portion is in line contact or point contact with the ridge line of the deposition target surrounding the film formation surface. Since the deposition target is supported by contact with such a ridgeline, deposition can be performed without directly supporting the deposition surface, and almost the entire deposition surface of the deposition target can be deposited. Can be made. As a result, in spite of a simple configuration such as a tapered support portion, an undeposited portion in the deposition target can be reduced and the deposition rate of the deposition substance can be increased. In addition, since an undeposited portion that is likely to be formed on the outer peripheral edge of the film formation target can be reduced, a specific function can be provided to the outer peripheral edge of the film formation target in the film forming process. Furthermore, since the ridgeline of the film-forming object is supported from the obliquely lower side by the tapered support portion, the support and transport stability can be improved as compared with the support mechanism by vacuum suction on the back surface.

また、本発明に係る支持機構では、テーパー状支持部は複数の弾性支持部材からなり、複数の弾性支持部材は、各弾性支持部材が枠体から下方に向かって開口部に突出して被成膜物を複数の箇所で支持すると共に、この複数の箇所を結んで形成される領域内に被成膜物の重心が位置するように配置されている。このように配置された弾性支持部材で被成膜物を支持することにより、支持や搬送の安定性を高くしつつ、搬送の際に外部から被成膜物に伝達される振動を低減できる。 Further, in the support mechanism according to the present invention, the tapered support portion includes a plurality of elastic support members, and each of the plurality of elastic support members protrudes from the frame body toward the opening portion toward the opening to form a film. to support the object at a plurality of locations, the center of gravity of the deposition material is arranged to lie within a region formed by connecting the plurality of locations. By supporting the film formation with the elastic support member arranged in this way, the vibration transmitted from the outside to the film formation during the conveyance can be reduced while the stability of the support and the conveyance is increased.

また、複数の弾性支持部材の少なくともいずれか1つの弾性支持部材が螺旋形状または波形状であることが好ましい。このような形状であれば、簡易な構成で弾性支持部材を実現することができる。   In addition, it is preferable that at least one of the plurality of elastic support members has a spiral shape or a wave shape. With such a shape, the elastic support member can be realized with a simple configuration.

本発明によれば、簡易な構成で、被成膜物における未成膜部分を低減させることができる。   According to the present invention, it is possible to reduce an undeposited portion in an object to be deposited with a simple configuration.

以下、添付図面を参照しながら本発明の実施形態を詳細に説明する。なお、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the description of the drawings, the same elements are denoted by the same reference numerals, and redundant description is omitted.

[第1実施形態]
図1は、本実施形態に係る成膜装置を模式的に示した断面図である。図2は、搬送トレイとガラス基板との配置関係を示す斜視図、図3は、搬送トレイにガラス基板を配置した際の、(a)は縦断面図であり、(b)は上面図であり、(c)は底面図である。図1に示すように、成膜装置1は、イオンプレーティング法に基づく成膜を行う装置であり、ITOといった透明導電材料などからなる材料ロッドMをプラズマビームPbで加熱し、材料ロッドMから昇華(または蒸発)して気化した粒子(以下、「昇華粒子」という)を上方に位置するガラス基板(被成膜物)Wの成膜面Waに付着堆積させて膜を生成する。
[First Embodiment]
FIG. 1 is a cross-sectional view schematically showing a film forming apparatus according to this embodiment. 2 is a perspective view showing an arrangement relationship between the transport tray and the glass substrate, FIG. 3 is a longitudinal sectional view when the glass substrate is placed on the transport tray, and FIG. 3B is a top view. (C) is a bottom view. As shown in FIG. 1, a film forming apparatus 1 is an apparatus that performs film formation based on an ion plating method, and heats a material rod M made of a transparent conductive material such as ITO with a plasma beam Pb. A film is generated by depositing and depositing particles evaporated from sublimation (or evaporation) (hereinafter referred to as “sublimation particles”) on a film formation surface Wa of a glass substrate (film formation object) W located above.

成膜装置1は、成膜室である真空容器3と、真空容器3内を減圧状態にする排気手段5と、真空容器3内にプラズマビームPbを供給するプラズマガン7と、真空容器3内の下部に配置されてプラズマビームPbを導く陽極部9と、陽極部9に材料ロッドMを供給する材料供給装置11と、陽極部9で昇華された昇華粒子が成膜されるガラス基板Wを水平方向に搬送させる搬送機構13とを備えている。   The film forming apparatus 1 includes a vacuum container 3 that is a film forming chamber, an evacuation unit 5 that makes the inside of the vacuum container 3 in a decompressed state, a plasma gun 7 that supplies a plasma beam Pb into the vacuum container 3, An anode part 9 for guiding the plasma beam Pb, a material supply device 11 for supplying a material rod M to the anode part 9, and a glass substrate W on which sublimation particles sublimated by the anode part 9 are formed are provided. And a transport mechanism 13 for transporting in the horizontal direction.

プラズマガン7は、圧力勾配型のプラズマガンであり、真空容器3の側壁に設けられた筒状部3aに固定されている。プラズマガン7は、プラズマビームPbを収束させる永久磁石15aと空芯コイル16aとがそれぞれ内蔵された第1中間電極15及び第2中間電極16からなる中間電極17と、陰極管18が固定されたカソードフランジ19とを備え、中間電極17とカソードフランジ19との間に陰極管18を包囲するガラス管20が配置されている。また、筒状部3aの周囲には、プラズマビームPbを真空容器3内に導くステアリングコイル21が設けられている。プラズマガン7は、ガン駆動装置22に接続され、ガン駆動装置22によって、陰極管18への給電を切り替えたり、第1中間電極15、第2中間電極16、またはステアリングコイル21への給電を調整する。   The plasma gun 7 is a pressure gradient type plasma gun, and is fixed to a cylindrical portion 3 a provided on the side wall of the vacuum vessel 3. The plasma gun 7 has a cathode tube 18 fixed thereto, and an intermediate electrode 17 composed of a first intermediate electrode 15 and a second intermediate electrode 16 each incorporating a permanent magnet 15a for converging the plasma beam Pb and an air-core coil 16a. A glass tube 20 that includes a cathode flange 19 and surrounds the cathode tube 18 is disposed between the intermediate electrode 17 and the cathode flange 19. A steering coil 21 that guides the plasma beam Pb into the vacuum vessel 3 is provided around the cylindrical portion 3a. The plasma gun 7 is connected to the gun driving device 22, and the gun driving device 22 switches the power supply to the cathode tube 18 and adjusts the power supply to the first intermediate electrode 15, the second intermediate electrode 16, or the steering coil 21. To do.

陽極部9は、プラズマビームPbを下方に導く主陽極であるハース23と、ハース23の周囲に配置された環状の補助陽極24とを備えている。このハース23は、絶縁物を介して真空容器3の下部に固定されている。ハース23は、内部に貫通孔を有しており、この貫通孔に材料ロッドMが下方から材料供給装置11によって供給される。補助陽極24は、プラズマビームPbをコントロールしてハース23の直上方にカスプ状磁場を形成する環状永久磁石24aとコイル24bとを備え、陽極電源装置25に接続されている。陽極電源装置25によってコイル24bに印加する電流を変化させてハース23に入射するプラズマビームPbの位置や入射範囲が微調整される。   The anode unit 9 includes a hearth 23 that is a main anode for guiding the plasma beam Pb downward, and an annular auxiliary anode 24 disposed around the hearth 23. The hearth 23 is fixed to the lower part of the vacuum vessel 3 through an insulator. The hearth 23 has a through hole inside, and the material rod M is supplied to the through hole from below by the material supply device 11. The auxiliary anode 24 includes an annular permanent magnet 24 a that forms a cusp-like magnetic field directly above the hearth 23 by controlling the plasma beam Pb and a coil 24 b, and is connected to an anode power supply device 25. The position and incidence range of the plasma beam Pb incident on the hearth 23 are finely adjusted by changing the current applied to the coil 24b by the anode power supply device 25.

材料供給装置11は、真空容器3の下部に設けられており、ハース23に設けられた貫通孔内で材料ロッドMを上方に移動させて供給する。このように供給される材料ロッドMがITOといった導電性物質の場合、プラズマビームPbが材料ロッドMに直接入射し、材料ロッドMの先端部分が加熱されて昇華点以上の温度になり、昇華(または蒸発)して昇華粒子になる。なお、材料ロッドMは、所定長さの円柱状の固体に成形されており、材料供給装置11により所定時間ごとに突き上げて上昇されるようになっている。   The material supply device 11 is provided in the lower part of the vacuum vessel 3 and supplies the material rod M by moving it upward in a through hole provided in the hearth 23. When the material rod M supplied in this way is a conductive substance such as ITO, the plasma beam Pb is directly incident on the material rod M, the tip portion of the material rod M is heated to a temperature equal to or higher than the sublimation point, and sublimation ( Or evaporation) to sublimation particles. The material rod M is formed into a columnar solid having a predetermined length, and is pushed up and raised by the material supply device 11 every predetermined time.

搬送機構13は、ガラス基板Wを保持する搬送トレイ(支持機構)40と、搬送トレイ40を定速で上流側から下流側に向かって水平方向に移動させる複数のローラからなるローラ部41とを備えている。   The transport mechanism 13 includes a transport tray (support mechanism) 40 that holds the glass substrate W, and a roller unit 41 that includes a plurality of rollers that move the transport tray 40 in a horizontal direction from the upstream side to the downstream side at a constant speed. I have.

搬送トレイ40は、図2及び図3に示すように、矩形状の開口部42を内部に備える枠体43と、枠体43の内側全周に備えられたテーパー状支持部44とを有している。開口部42は、テーパー状支持部44により、上面から下面に向かって狭くなるようなテーパー形状に形成され、このような開口部42の内部にガラス基板Wが収容されるようになっている。   As shown in FIGS. 2 and 3, the transport tray 40 includes a frame 43 having a rectangular opening 42 therein, and a tapered support 44 provided on the entire inner periphery of the frame 43. ing. The opening 42 is formed in a tapered shape so as to become narrower from the upper surface toward the lower surface by the tapered support portion 44, and the glass substrate W is accommodated inside the opening 42.

枠体43は、所定の厚みを有する4つの辺部43a,43b,43c,43dからなり、開口部42を取り囲むように、隣接する辺部の端部同士が各連結部43eでそれぞれ連結されている。   The frame body 43 is composed of four side portions 43a, 43b, 43c, and 43d having a predetermined thickness, and ends of adjacent side portions are connected to each other by connecting portions 43e so as to surround the opening 42. Yes.

テーパー状支持部44は、枠体43の内側面全周に隣接して備えられており、図3(a)に示すように、開口部42の周方向における縦断面において上方から下方に向けて徐々に幅を狭めるよう、テーパー状支持部44の下面44aに対するテーパー側面44bの角度(テーパー角度)が約70度であるテーパー形状を有している。このようなテーパー状支持部44により、開口部42は、上開口面42aが成膜面Waより広い(図3(b)参照)一方、下開口面42bが成膜面Waより狭くなる(図3(c)参照)ように形成され、開口部42の内部で、テーパー状支持部44のテーパー側面44bと成膜面Waを囲むガラス基板Wの稜線Wbとが全周にわたって線接触するようになっている。このような線接触により、ガラス基板Wは、テーパー状支持部44に斜め下方から支持される。なお、枠体43とテーパー状支持部44とは一体形成されても、別々に形成後、両者を接着させて一体化したものでもよい。   The tapered support portion 44 is provided adjacent to the entire inner surface of the frame 43, and as shown in FIG. 3A, from the upper side to the lower side in the longitudinal section in the circumferential direction of the opening 42. In order to gradually narrow the width, the taper side surface 44b has a tapered shape with an angle (taper angle) of about 70 degrees with respect to the lower surface 44a of the tapered support portion 44. By such a tapered support portion 44, the opening 42 has an upper opening surface 42a wider than the film formation surface Wa (see FIG. 3B), while a lower opening surface 42b becomes narrower than the film formation surface Wa (FIG. 3). 3 (c)), and within the opening 42, the tapered side surface 44b of the tapered support portion 44 and the ridge line Wb of the glass substrate W surrounding the film-forming surface Wa are in line contact over the entire circumference. It has become. By such line contact, the glass substrate W is supported by the tapered support portion 44 from obliquely below. Note that the frame body 43 and the tapered support portion 44 may be integrally formed or may be formed separately and then bonded together to be integrated.

次に、上記した成膜装置1の動作手順について説明する。   Next, the operation procedure of the film forming apparatus 1 will be described.

まず、排気手段5によって真空容器3内を減圧状態になるように排気すると共に、材料供給装置11によってハース23に材料ロッドMを充填し、陽極部9の貫通孔に材料ロッドMを保持させる(第1のステップ)。続いて、ガン駆動装置22及び陽極電源装置25によって、プラズマガン7の陰極管18と、ハース23との間で放電を生じさせ、放電によって生じるプラズマビームPbをハース23に向けて照射する(第2のステップ)。   First, the inside of the vacuum vessel 3 is evacuated by the evacuation means 5 so that the material rod M is filled in the hearth 23 by the material supply device 11, and the material rod M is held in the through hole of the anode portion 9 ( First step). Subsequently, a discharge is generated between the cathode tube 18 of the plasma gun 7 and the hearth 23 by the gun driving device 22 and the anode power supply device 25, and the plasma beam Pb generated by the discharge is irradiated toward the hearth 23 (first). Step 2).

次に、陽極電源装置25によって、補助陽極24に印加する電流を調整し、ハース23の貫通孔に入射するプラズマビームPbの入射範囲を制御し、材料ロッドMの先端部分などの温度が昇華点以上になるように制御する(第3のステップ)。材料ロッドMが十分に加熱されると、材料ロッドMが昇華(または蒸発)して気化し、昇華粒子が出現する。そして、昇華粒子をプラズマビームPbによってイオン化し、活性度の高い状態で、搬送トレイ40に支持されたガラス基板Wの下面に位置する成膜面Waに入射させ、成膜面WaにITO膜を形成する(第4のステップ)。   Next, the current applied to the auxiliary anode 24 is adjusted by the anode power supply device 25, the incident range of the plasma beam Pb incident on the through hole of the hearth 23 is controlled, and the temperature of the tip portion of the material rod M is the sublimation point. Control is performed as described above (third step). When the material rod M is sufficiently heated, the material rod M sublimates (or evaporates) and vaporizes, and sublimated particles appear. Then, the sublimation particles are ionized by the plasma beam Pb and incident on the film formation surface Wa located on the lower surface of the glass substrate W supported by the transport tray 40 in a highly active state, and an ITO film is formed on the film formation surface Wa. Form (fourth step).

ここで、テーパー状支持部44の下開口面42bが成膜面Waより狭くなるように形成されていることから成膜面Waの外周端部への直接的な成膜が一部行われない可能性があるものの、所定のテーパー角(例えば65度〜85度、好ましくは70度)を有するテーパー状支持部44とすることにより、昇華粒子がテーパー状支持部44の下方先端部に対して回り込むようになり、成膜面Waの外周端部へも所定量のITO膜が成膜されるようになっている。   Here, since the lower opening surface 42b of the tapered support portion 44 is formed so as to be narrower than the film formation surface Wa, direct film formation on the outer peripheral edge of the film formation surface Wa is not performed in part. Although there is a possibility, by using the tapered support portion 44 having a predetermined taper angle (for example, 65 degrees to 85 degrees, preferably 70 degrees), the sublimated particles are in the lower tip portion of the tapered support portion 44. A predetermined amount of ITO film is formed on the outer peripheral end of the film formation surface Wa.

以上詳述したように、本実施形態に係る搬送トレイ40を有する成膜装置1では、テーパー状支持部44のテーパー側面44bが、成膜面Waを囲むガラス基板Wの稜線Wbと線接触するようになっている。このような稜線との線接触によってガラス基板Wを支持していることから、成膜面Waを直接支持しないで成膜を行うことができ、ガラス基板Wの成膜面Waの略全面を成膜させることができる。この結果、テーパー状支持部44といった簡易な構成にもかかわらず、ガラス基板Wにおける未成膜部分を低減させて、ITO膜の付着率を上昇させることができる。また、ガラス基板Wの外周端部などに形成され易い未成膜部分を低減できるので、ガラス基板Wの外周端部などに特定の機能を成膜処理で持たせることができる。更に、ガラス基板Wの稜線Wbをテーパー状支持部44のテーパー側面44bで斜め下方から支持しているため、裏面の真空吸着などによる支持機構に比べて、支持や搬送の安定性を高くできる。   As described in detail above, in the film forming apparatus 1 having the transport tray 40 according to the present embodiment, the tapered side surface 44b of the tapered support portion 44 is in line contact with the ridge line Wb of the glass substrate W surrounding the film forming surface Wa. It is like that. Since the glass substrate W is supported by such line contact with the ridgeline, the film formation can be performed without directly supporting the film formation surface Wa, and the substantially entire film formation surface Wa of the glass substrate W is formed. Can be made into a membrane. As a result, in spite of a simple configuration such as the tapered support portion 44, an undeposited portion on the glass substrate W can be reduced and the adhesion rate of the ITO film can be increased. Moreover, since the non-film-forming part which is easy to be formed in the outer peripheral edge part etc. of the glass substrate W can be reduced, a specific function can be given to the outer peripheral edge part etc. of the glass substrate W by film-forming processing. Furthermore, since the ridge line Wb of the glass substrate W is supported from the diagonally lower side by the tapered side surface 44b of the tapered support portion 44, the stability of support and transport can be improved as compared with a support mechanism by vacuum suction on the back surface.

[第2実施形態]
次に、本発明の第2実施形態について説明する。本実施形態では、テーパー状支持部を複数の板ばねで構成し、各板ばねが4つの辺部それぞれから下方に向かって開口部に突出するように配置された搬送トレイを用いる。
[Second Embodiment]
Next, a second embodiment of the present invention will be described. In the present embodiment, a tapered tray is formed of a plurality of leaf springs, and a transport tray is used in which each leaf spring is disposed so as to protrude downward from each of the four sides.

本実施形態に係る搬送トレイ50について図4を参照して説明する。搬送トレイ50は、図4に示すように、矩形状の開口部52を内部に備える枠体53と、枠体53の内側に備えられてガラス基板Wを支持するテーパー状支持部54とを備えている。開口部52は、ガラス基板Wの成膜面Waより所定幅広くなるように形成されており、ガラス基板Wが開口部52内に収容されるようになっている。   A transport tray 50 according to the present embodiment will be described with reference to FIG. As shown in FIG. 4, the transport tray 50 includes a frame 53 having a rectangular opening 52 therein, and a tapered support 54 provided inside the frame 53 to support the glass substrate W. ing. The opening 52 is formed so as to be wider than the film formation surface Wa of the glass substrate W, and the glass substrate W is accommodated in the opening 52.

枠体53は、所定の厚みを有する4つの辺部53a,53b,53c,53dからなり、開口部52を取り囲むように、隣接する辺部の端部同士が各連結部でそれぞれ連結されている。   The frame 53 includes four side portions 53a, 53b, 53c, and 53d having a predetermined thickness, and ends of adjacent side portions are connected to each other at each connecting portion so as to surround the opening 52. .

テーパー状支持部54は、弾性を有する4つの板ばね(弾性支持部材)54a,54b,54c,54dから構成される。各板ばね54a,54b,54c,54dは所定幅を有し、一端が各辺部53a,53b,53c,53dの長手方向の略中央付近に固定され、他端はテーパー角が約70度になるように開口部52の下方に向かって突出形成される。なお、突出形成された各板ばね54a,54b,54c,54dの他端の先端は、上方への付勢力を維持してガラス基板Wを継続的に安定支持するため、先端が突出方向とは逆に戻る反り返り構造を有している。   The tapered support portion 54 includes four elastic leaf springs (elastic support members) 54a, 54b, 54c, and 54d. Each leaf spring 54a, 54b, 54c, 54d has a predetermined width, one end is fixed in the vicinity of the center in the longitudinal direction of each side 53a, 53b, 53c, 53d, and the other end has a taper angle of about 70 degrees. It is formed so as to protrude downward from the opening 52. In addition, since the tip of the other end of each of the plate springs 54a, 54b, 54c, 54d formed to protrude and maintain the urging force upward and stably support the glass substrate W, the tip is the projection direction. It has a warping structure that returns to the contrary.

上述した枠体53とテーパー状支持部54とにより、図4(a)に示すように、各板ばね54a,54b,54c,54dが配置された開口部52の所定箇所においては、縦断面が上方から下方に向けて徐々に幅を狭め、下方ではガラス基板Wの幅より狭くなるようになっている。そして、開口部52にガラス基板Wを収容した際、テーパー状支持部54を構成する各板ばね54a,54b,54c,54dのテーパー側面と成膜面Waを囲むガラス基板Wの稜線Wbの一部とが線接触する。このような線接触により、ガラス基板Wは、板ばね54a,54b,54c,54dによって複数の箇所において斜め下方から支持される。なお、この支持の際、板ばね54a,54b,54c,54dそれぞれが成膜面Waと接触する複数の箇所を結んで形成される領域R1内にガラス基板Wの重心Gが位置しており、ガラス基板Wは搬送トレイ50によって安定支持される。   As shown in FIG. 4A, the frame 53 and the tapered support portion 54 described above have a longitudinal section at a predetermined location of the opening 52 where the leaf springs 54a, 54b, 54c, 54d are arranged. The width is gradually narrowed from the upper side to the lower side, and the lower side is narrower than the width of the glass substrate W. When the glass substrate W is accommodated in the opening 52, one of the ridge lines Wb of the glass substrate W surrounding the tapered side surfaces of the plate springs 54a, 54b, 54c, 54d constituting the tapered support portion 54 and the film formation surface Wa. Line contact with the part. Due to such line contact, the glass substrate W is supported obliquely from below at a plurality of locations by the leaf springs 54a, 54b, 54c, 54d. In this support, the center of gravity G of the glass substrate W is located in a region R1 formed by connecting a plurality of locations where the leaf springs 54a, 54b, 54c, 54d are in contact with the film formation surface Wa. The glass substrate W is stably supported by the transport tray 50.

このように、本実施形態に係る搬送トレイ50を有する成膜装置1では、弾性を有する板ばね54a,54b,54c,54dが下方に向かって開口部52に突出するように配置されて、テーパー状支持部54を形成している。このため、弾性を有する板ばねでガラス基板Wを支持でき、搬送の際に外部から被成膜物に伝達される振動を低減できる。また、テーパー状支持部54が枠体53の内周の一部だけに備えられていることから、第1実施形態に比べて、成膜面Waの外周端部への直接的な成膜が行われない箇所を低減でき、成膜物質の付着率を上昇させることができる。   As described above, in the film forming apparatus 1 having the transfer tray 50 according to the present embodiment, the elastic leaf springs 54a, 54b, 54c, 54d are arranged so as to protrude downward into the opening 52, and are tapered. A support 54 is formed. For this reason, the glass substrate W can be supported by a plate spring having elasticity, and vibration transmitted from the outside to the film-forming object during conveyance can be reduced. Further, since the tapered support portion 54 is provided only on a part of the inner periphery of the frame body 53, the direct film formation on the outer peripheral end portion of the film formation surface Wa is performed as compared with the first embodiment. Locations that are not performed can be reduced, and the deposition rate of the film-forming substance can be increased.

[第3実施形態]
次に、本発明の第3実施形態について説明する。本実施形態では、テーパー状支持部を複数の線ばねで構成し、各線ばねが4つの辺部それぞれから下方に向かって開口部に突出するように配置された搬送トレイを用いる。
[Third Embodiment]
Next, a third embodiment of the present invention will be described. In this embodiment, a taper-shaped support part is comprised with a some wire spring, and the conveyance tray arrange | positioned so that each line spring may protrude in an opening part toward the downward direction from each of four edge parts is used.

本実施形態に係る搬送トレイ60について図5を参照して説明する。搬送トレイ60は、図5に示すように、矩形状の開口部62を内部に備える枠体63と、枠体63の内側に備えられてガラス基板Wを支持するテーパー状支持部64とを備えている。開口部62は、ガラス基板Wの成膜面Waより所定幅広くなるように形成されており、ガラス基板Wが開口部62内に収容されるようになっている。   A transport tray 60 according to the present embodiment will be described with reference to FIG. As shown in FIG. 5, the transport tray 60 includes a frame 63 having a rectangular opening 62 therein, and a tapered support 64 provided inside the frame 63 and supporting the glass substrate W. ing. The opening 62 is formed so as to be wider than the film formation surface Wa of the glass substrate W, and the glass substrate W is accommodated in the opening 62.

枠体63は、所定の厚みを有する4つの辺部63a,63b,63c,63dからなり、開口部62を取り囲むように、隣接する辺部の端部同士が各連結部でそれぞれ連結されている。   The frame 63 includes four side portions 63a, 63b, 63c, and 63d having a predetermined thickness, and ends of adjacent side portions are connected to each other by the connecting portions so as to surround the opening 62. .

テーパー状支持部64は、弾性を有する4つの線ばね(弾性支持部材)64a,64b,64c,64dから構成される。各線ばね64a,64b,64c,64dは線状の支持部材であって、一端が各辺部63a,63b,63c,63dの長手方向の略中央付近に固定され、他端はテーパー角が約70度になるように開口部62の下方に向かって突出形成される。なお、突出形成された各線ばね64a,64b,64c,64dの他端の先端は、上方への付勢力を維持してガラス基板Wを継続的に安定支持するため、先端が突出方向とは逆に戻る反り返り構造を有している。   The tapered support portion 64 includes four wire springs (elastic support members) 64a, 64b, 64c, and 64d having elasticity. Each of the wire springs 64a, 64b, 64c, and 64d is a linear support member, and one end is fixed near the center in the longitudinal direction of each of the side portions 63a, 63b, 63c, and 63d, and the other end has a taper angle of about 70. It is formed so as to protrude downward from the opening 62 so as to have a degree. In addition, since the tip of the other end of each wire spring 64a, 64b, 64c, 64d formed in a protruding manner maintains the upward biasing force and stably supports the glass substrate W, the tip is opposite to the protruding direction. It has a warping structure that returns to.

上述した枠体63とテーパー状支持部64とにより、図5(a)に示すように、各線ばね64a,64b,64c,64dが配置された開口部62の所定箇所においては、縦断面が上方から下方に向けて徐々に幅を狭め、下方ではガラス基板Wの幅より狭くなるようになっている。そして、開口部62にガラス基板Wを収容した際、テーパー状支持部64を構成する各線ばね64a,64b,64c,64dのテーパー側面と成膜面Waを囲むガラス基板Wの稜線Wbの一部とが点接触する。このような点接触により、ガラス基板Wは、線ばね64a,64b,64c,64dによって複数の箇所において斜め下方から支持される。なお、この支持の際、線ばね64a,64b,64c,64dそれぞれが成膜面Waと接触する複数の箇所を結んで形成される領域R2内にガラス基板Wの重心Gが位置しており、ガラス基板Wは搬送トレイ60によって安定支持される。   As shown in FIG. 5A, the frame 63 and the tapered support portion 64 described above have a vertical cross section at a predetermined position of the opening 62 where the line springs 64a, 64b, 64c, and 64d are arranged. The width is gradually narrowed from the bottom to the bottom, and below the width of the glass substrate W. When the glass substrate W is accommodated in the opening 62, a part of the ridge line Wb of the glass substrate W surrounding the tapered side surfaces of the wire springs 64 a, 64 b, 64 c, 64 d constituting the tapered support portion 64 and the film formation surface Wa is formed. And point contact. By such point contact, the glass substrate W is supported from diagonally below at a plurality of locations by the wire springs 64a, 64b, 64c, and 64d. In this support, the center of gravity G of the glass substrate W is located in a region R2 formed by connecting a plurality of locations where the wire springs 64a, 64b, 64c, and 64d are in contact with the film formation surface Wa. The glass substrate W is stably supported by the transport tray 60.

このように、本実施形態に係る搬送トレイ60を有する成膜装置では、弾性を有する線ばね64a,64b,64c,64dが下方に向かって開口部62に突出するように配置されて、テーパー状支持部64を形成している。このため、弾性を有する線ばねでガラス基板Wを支持でき、搬送の際に外部から被成膜物に伝達される振動を低減できる。また、テーパー状支持部64が枠体63の内周の一部だけに備えられ、しかも線状の線ばねから構成されて点接触で支持するようになっていることから、第1及び第2実施形態に比べて、成膜面Waの外周端部への直接的な成膜が行われない箇所を一層低減でき、成膜物質の付着率を更に上昇させることができる。   Thus, in the film forming apparatus having the transfer tray 60 according to the present embodiment, the elastic line springs 64a, 64b, 64c, and 64d are arranged so as to protrude downward into the opening 62, and are tapered. A support portion 64 is formed. For this reason, the glass substrate W can be supported by a wire spring having elasticity, and vibration transmitted from the outside to the film-forming object during conveyance can be reduced. Further, since the tapered support portion 64 is provided only on a part of the inner periphery of the frame 63, and is configured by a linear wire spring and is supported by point contact, the first and second portions are provided. Compared with the embodiment, the portion where direct film formation on the outer peripheral edge of the film formation surface Wa is not performed can be further reduced, and the deposition rate of the film formation material can be further increased.

以上、本発明の好適な実施形態について説明したが、本発明は上記実施形態に限定されるものではない。例えば、上記実施形態では、被成膜物として支持されるガラス基板が矩形状の場合について説明したが、支持されるガラス基板は円形状であってもよい。このような場合には、開口部が円形であることが好ましい。また、本実施形態では、被成膜物としてガラス基板を用いて説明したが、シリコン基板やプラスチック基板などでもよく、成膜面が下方に向けられた状態で成膜する必要のある被成膜物であればよい。また、本実施形態では、成膜物質として、ITOを用いて説明したが、SiON等の成膜物質でもよく、成膜物質であればよい。   The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment. For example, in the above-described embodiment, the case where the glass substrate supported as the deposition target is rectangular has been described. However, the supported glass substrate may be circular. In such a case, the opening is preferably circular. In this embodiment, the glass substrate is used as the film formation object. However, a silicon substrate, a plastic substrate, or the like may be used, and the film formation process needs to be performed with the film formation surface facing downward. If it is a thing. In the present embodiment, description has been made using ITO as a film forming material, but a film forming material such as SiON may be used as long as it is a film forming material.

また、第3実施形態では、線ばねからなる線状の弾性支持部材を用いたが、図6(a)に示す螺旋形状の弾性支持部材を用いてもよいし、図6(b)に示す波形状の弾性支持部材を用いてもよい。このような形状であれば、簡易な構成で弾性支持部材を実現することができる。   In the third embodiment, a linear elastic support member made of a wire spring is used. However, a spiral elastic support member shown in FIG. 6A may be used, or FIG. A wave-like elastic support member may be used. With such a shape, the elastic support member can be realized with a simple configuration.

第1実施形態に係る成膜装置を模式的に示した断面図である。It is sectional drawing which showed typically the film-forming apparatus which concerns on 1st Embodiment. 第1実施形態に係る搬送トレイと基板との配置関係を示す斜視図である。It is a perspective view which shows the arrangement | positioning relationship between the conveyance tray and board | substrate which concern on 1st Embodiment. 第1実施形態に係る搬送トレイにガラス基板を配置した際の、(a)は縦断面図であり、(b)は上面図であり、(c)は底面図である。When a glass substrate is arrange | positioned to the conveyance tray which concerns on 1st Embodiment, (a) is a longitudinal cross-sectional view, (b) is a top view, (c) is a bottom view. 第2実施形態に係る搬送トレイにガラス基板を配置した際の、(a)は縦断面図であり、(b)は上面図であり、(c)は底面図である。When a glass substrate is arrange | positioned to the conveyance tray which concerns on 2nd Embodiment, (a) is a longitudinal cross-sectional view, (b) is a top view, (c) is a bottom view. 第3実施形態に係る搬送トレイにガラス基板を配置した際の、(a)は縦断面図であり、(b)は上面図であり、(c)は底面図である。When a glass substrate is arrange | positioned to the conveyance tray which concerns on 3rd Embodiment, (a) is a longitudinal cross-sectional view, (b) is a top view, (c) is a bottom view. 弾性支持部材の変化例であり、(a)は螺旋形状の変化例であり、(b)は波形状の変化例である。It is an example of a change of an elastic support member, (a) is an example of change of a spiral shape, and (b) is an example of change of a wave shape.

符号の説明Explanation of symbols

1…成膜装置、13…搬送機構、40,50,60…搬送トレイ(支持機構)、41…ローラ部、42,52,62…開口部、43,53,63…枠体、43a,43b,43c,43d,53a,53b,53c,53d,63a,63b,63c,63d…辺部、43e…連結部、44,54,64…テーパー状支持部、54a,54b,54c,54d…板ばね(弾性支持部材)、64a,64b,64c,64d…線ばね(弾性支持部材)、R1,R2…領域、W…ガラス基板、Wa…成膜面、Wb…稜線。   DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 13 ... Conveyance mechanism, 40, 50, 60 ... Conveyance tray (support mechanism), 41 ... Roller part, 42, 52, 62 ... Opening part, 43, 53, 63 ... Frame, 43a, 43b , 43c, 43d, 53a, 53b, 53c, 53d, 63a, 63b, 63c, 63d ... sides, 43e ... connecting parts, 44,54,64 ... tapered support parts, 54a, 54b, 54c, 54d ... leaf springs (Elastic support member), 64a, 64b, 64c, 64d ... wire spring (elastic support member), R1, R2 ... region, W ... glass substrate, Wa ... film formation surface, Wb ... ridge line.

Claims (2)

成膜面が下方に向けられた状態に被成膜物を支持して前記成膜面に成膜物質を付着堆積させる成膜装置における被成膜物の支持機構であって、
前記成膜面と同等以上の広さの開口部を内部に有する枠体と、
前記枠体の内方に備えられ、少なくとも前記開口部の周方向における一部において、前記開口部の縦断面を上方から下方に向けて狭めるテーパー状支持部とを備え、
前記テーパー状支持部は、複数の弾性支持部材からなり、前記成膜面を囲む前記被成膜物の稜線に線接触または点接触するようになっており、
前記複数の弾性支持部材は、各弾性支持部材が前記枠体から下方に向かって前記開口部に突出して前記被成膜物を複数の箇所で支持すると共に、前記複数の箇所を結んで形成される領域内に前記被成膜物の重心が位置するように配置されることを特徴とする支持機構。
A mechanism for supporting a film-forming object in a film-forming apparatus that supports the film-forming object in a state in which the film-forming surface is directed downward and deposits and deposits a film-forming substance on the film-forming surface;
A frame body having an opening having a width equal to or larger than that of the film-forming surface;
A taper-shaped support portion that is provided on the inner side of the frame body and narrows the longitudinal section of the opening portion from the upper side to the lower side at least in a part of the opening portion in the circumferential direction;
The tapered support portion is composed of a plurality of elastic support members, and is configured to be in line contact or point contact with a ridgeline of the film formation surrounding the film formation surface ,
The plurality of elastic support members are formed such that each elastic support member protrudes downward from the frame body to the opening to support the film-formed object at a plurality of locations and connects the plurality of locations. The support mechanism is arranged so that the center of gravity of the film-forming object is located in a region to be deposited .
前記複数の弾性支持部材の少なくともいずれか1つの弾性支持部材が螺旋形状または波形状であることを特徴とする請求項に記載の支持機構。
The support mechanism according to claim 1 , wherein at least one of the plurality of elastic support members has a spiral shape or a wave shape.
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