JP4889306B2 - Silicone coagulation mold with mold release material - Google Patents
Silicone coagulation mold with mold release material Download PDFInfo
- Publication number
- JP4889306B2 JP4889306B2 JP2006010509A JP2006010509A JP4889306B2 JP 4889306 B2 JP4889306 B2 JP 4889306B2 JP 2006010509 A JP2006010509 A JP 2006010509A JP 2006010509 A JP2006010509 A JP 2006010509A JP 4889306 B2 JP4889306 B2 JP 4889306B2
- Authority
- JP
- Japan
- Prior art keywords
- mold
- silicon
- release material
- mass
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Mold Materials And Core Materials (AREA)
- Silicon Compounds (AREA)
Description
本発明は、シリコンを凝固する際に使用する鋳型に関するもので、凝固したシリコン塊を鋳型を傷めること無く極めて良好に離型させるためのものである。得られたシリコン塊は、太陽電池用の原料、あるいは太陽電池用のウエハ切り出し用のインゴットとして使用することができる。 The present invention relates to a mold used for solidifying silicon, and is intended to release a solidified silicon mass very well without damaging the mold. The obtained silicon lump can be used as a raw material for solar cells or an ingot for cutting out wafers for solar cells.
太陽電池に使用されるシリコンは一般に99.9999%程度の純度が必要とされ、各種金属不純物は0.1質量ppm以下、また、Bは少なくとも0.3質量ppm以下、好ましくは0.1質量ppm以下であることが要求される。この純度を満たすシリコンとしては、半導体用シリコン、すなわち、シリコン塩化物を蒸留後熱分解して得られる高純度シリコンがある。しかしながら、このシーメンス法はコストが高く、大量にシリコンを必要とする太陽電池には不向きである。 Silicon used for solar cells generally requires a purity of about 99.9999%, various metal impurities are 0.1 mass ppm or less, and B is at least 0.3 mass ppm or less, preferably 0.1 mass. It is required to be ppm or less. As silicon satisfying this purity, there is silicon for semiconductors, that is, high-purity silicon obtained by pyrolyzing silicon chloride after distillation. However, this Siemens method is expensive and unsuitable for solar cells that require a large amount of silicon.
そこで、太陽電池に使用可能な安価なシリコンを製造する技術が各種研究されてきたが、B、P以外の、Fe、Al、Ca等の各種金属不純物は、一方向凝固法で除去することが一般的である。すなわち、シリコン融液が固化する際に、共存する融液シリコンに金属不純物は多く分配し、固化したシリコンにはわずかしか取り込まれないという現象を使用した精製方法である。この一方向凝固法をはじめ、太陽電池に使用可能な安価なシリコンを製造する各種技術では、シリコンを溶解・凝固させる工程が不可欠な場合が多い。 Therefore, various techniques for producing inexpensive silicon that can be used for solar cells have been studied. Various metal impurities other than B and P, such as Fe, Al, and Ca, can be removed by a unidirectional solidification method. It is common. That is, when the silicon melt is solidified, it is a purification method using the phenomenon that a large amount of metal impurities are distributed to the coexisting melt silicon and only a small amount is taken into the solidified silicon. In various technologies for manufacturing inexpensive silicon that can be used for solar cells, including this unidirectional solidification method, a process for melting and solidifying silicon is often indispensable.
さて、溶融シリコンを凝固させる際の鋳型としては、一般に、石英製の鋳型、または、カーボン製の鋳型が使用されることが多いが、これらの鋳型をそのまま使用すると、固化したシリコン塊が鋳型に固着してしまい、シリコンの回収歩留まりが低下する。また、鋳型が再利用できず、実用的で無いという問題もある。これらの問題を解決するため、カーボン製の組立・分解が可能な鋳型の内面に離型材を塗布し、シリコン固化後にカーボン鋳型を分解しシリコン塊を取り出す方法が開発されてきた。 As a mold for solidifying molten silicon, generally, a quartz mold or a carbon mold is often used. If these molds are used as they are, solidified silicon lump is used as a mold. It adheres and the yield of silicon recovery decreases. There is also a problem that the mold cannot be reused and is not practical. In order to solve these problems, a method has been developed in which a mold release material is applied to the inner surface of a mold made of carbon that can be assembled and disassembled, and after the silicon is solidified, the carbon mold is disassembled to extract a silicon lump.
(特許文献1)、(特許文献2)には、シリコンの酸化物、窒化物、炭化物をカーボン製の組立鋳型に被覆し、鋳型を傷つけることなくシリコン塊を取り出す方法が述べられている。しかしながら、シリコンの酸化物、窒化物、炭化物をカーボン製鋳型に被覆する具体的方法については記載されていない。 (Patent Document 1) and (Patent Document 2) describe a method of covering a silicon assembly mold with silicon oxide, nitride, and carbide and taking out a silicon lump without damaging the mold. However, there is no description of a specific method for coating a carbon mold with silicon oxide, nitride, or carbide.
(特許文献3)には、窒化ケイ素粉末と有機バインダーを溶剤中に溶解したスラリーで鋳型内面をコーティングする方法が記載されている。ただ、有機バインダーは、高温では一般的に離型材から脱離してしまう。事実、この公報の4欄58〜60行に、有機バインダーとしては、ポリビニルアルコール、ポリビニルアセテート、ポリビニルブチレートから選ぶことができると記述されているが、これらはシリコンの融点以下の高温で離型材から脱離してしまう。 (Patent Document 3) describes a method of coating the inner surface of a mold with a slurry in which silicon nitride powder and an organic binder are dissolved in a solvent. However, the organic binder generally desorbs from the release material at high temperatures. In fact, in column 4, lines 58 to 60 of this publication, it is described that the organic binder can be selected from polyvinyl alcohol, polyvinyl acetate, and polyvinyl butyrate. It will be detached from.
さらに、この公報の5欄9〜11行には、ポリビニルアルコールが低温で脱離し好ましいと述べられている。しかしながら、有機バインダーが高温で離型材から脱離してしまうと、残っているのは窒化ケイ素粉末のみで、これら粉末がお互いにごく緩く焼結し離型材を形成しているので、離型材の強度は低く、離型材が破損する危険がある。当然のことながら、離型材が破損すると、その領域はシリコンが鋳型に固着するという問題が生じる。 Furthermore, column 5 lines 9 to 11 of this publication state that polyvinyl alcohol is preferably desorbed at a low temperature. However, if the organic binder is detached from the release material at high temperature, only the silicon nitride powder remains, and these powders are sintered very loosely to form a release material. Is low and there is a risk of the release material being damaged. As a matter of course, when the release material is broken, there is a problem that silicon adheres to the mold in the region.
離型材の強度を上げるには、窒化ケイ素粉末よりもより強固に焼結する粉末を選定すれば良いわけであるが、この場合は焼結による収縮が生じ、離型材にクラックが生じてしまう。従って、焼結しやすい粉末は使用できないのが実情である。 In order to increase the strength of the release material, it is only necessary to select a powder that sinters more strongly than the silicon nitride powder. In this case, shrinkage occurs due to sintering, and cracks occur in the release material. Therefore, the fact is that powders that are easily sintered cannot be used.
(特許文献4)〜(特許文献12)には、さらに進んだ方法が述べられている。すなわち、離型材中の粉末の粒度の改善、組成比の改善、分散剤の添加等について記述されているが、本質的に粉末と有機バインダーを使用しており、使用されている有機バインダーは高温では離型材から脱離するものが選ばれている。 (Patent Document 4) to (Patent Document 12) describe further advanced methods. In other words, it describes the improvement of the particle size of the powder in the release material, the improvement of the composition ratio, the addition of a dispersant, etc., but essentially uses powder and an organic binder, and the organic binder used is at a high temperature. In this case, a material that is detached from the release material is selected.
例えば、(特許文献11)では、その特許請求の範囲にあるように、450〜600℃でバインダーを脱脂することが特徴であり、バインダーがポリビニルアルコールから成ることが述べられている。さらに、(特許文献11)の段落[0007]〜[0011]に述べられているように、シリコンへの炭素取り込みを防止する目的から、バインダーは炭素等の形で残さずできるだけ完全に離型材から除去することが望まれる、とされている。 For example, (Patent Document 11) is characterized in that the binder is degreased at 450 to 600 ° C. as described in the claims, and that the binder is made of polyvinyl alcohol. Furthermore, as described in paragraphs [0007] to [0011] of (Patent Document 11), for the purpose of preventing carbon uptake into silicon, the binder is not completely left in the form of carbon or the like, but as completely as possible from the release material. It is supposed to be removed.
しかしながら、バインダーが除去されればされるほど離型材の強度は低下し、離型材が破損する可能性が生じる。具体的には、離型材にクラックが発生し、その部分から溶融シリコンが離型材の裏側に浸透し、結果として、凝固シリコンと鋳型が固着する問題があった。このようなことが生じると、当然、鋳型は再利用できなくなり、経済性が失われてしまう。 However, the more the binder is removed, the lower the strength of the release material and the possibility of breakage of the release material. Specifically, cracks occur in the release material, and molten silicon penetrates into the back side of the release material from the part, resulting in a problem that the solidified silicon and the mold are fixed. If this happens, naturally, the mold cannot be reused, and the economy is lost.
例えば、鋳型内へ溶融したシリコンを注ぎ凝固させる場合には、溶融シリコンが鋳型内の離型材に衝突するので、離型材自身が強固で、かつ、鋳型に強く固着していないと、離型材が破壊されてしまう、または、剥離してしまう可能性が高い。 For example, when molten silicon is poured into a mold and solidified, the molten silicon collides with the mold release material in the mold, so that the mold release material itself is strong and firmly fixed to the mold. There is a high possibility that it will be destroyed or peeled off.
また、離型材中にバインダーが残っていても、バインダーが一般の有機物であれば、500〜1000℃程度以上の高温ではバインダーは軟化もしくは融液化し強度がなくなるので、離型材としての強度を保持することはできない。結果として、離型材が鋳型から剥離しやすくなってしまう。もし一部でも離型材が剥離してしまうと、鋳型のその部分が凝固シリコンと固着してしまい、鋳型を再使用できない、という問題があった。 Even if the binder remains in the mold release material, if the binder is a general organic substance, the binder softens or melts at a high temperature of about 500 to 1000 ° C. and loses its strength, so it retains its strength as a mold release material. I can't do it. As a result, the release material is easily peeled from the mold. If part of the mold release material is peeled off, that part of the mold is fixed to the solidified silicon, and the mold cannot be reused.
以上の問題に対し、先に本発明者らは、鋳型の内面に離型材を保持させたシリコン凝固用の鋳型において、前記離型材が実質上、シリコンの融点(1414℃)以上の融点を有する粉末と、100℃以上シリコンの融点以下の温度で炭素を生成する樹脂から成ることを特徴とするシリコン凝固用鋳型を使用すると、これら問題が解決することを見出した。 In order to solve the above problems, the inventors of the present invention have previously described that in a mold for solidifying silicon in which a mold release material is held on the inner surface of the mold, the mold release material has a melting point substantially equal to or higher than the melting point of silicon (1414 ° C.). It has been found that these problems can be solved by using a silicon coagulation mold characterized by comprising a powder and a resin that produces carbon at a temperature of 100 ° C. or higher and below the melting point of silicon.
しかしながら、この方法においては、離型材の厚さを1mm以上とすると使用する離型材の総量が多くなるのでコストが相応に発生するし、コストを下げるため離型材の厚さを1mm未満とすると、まれにではあるが、溶融シリコンの上表面が触れる領域の鋳型内面の離型材や、鋳型を構成する板がつき合わされる領域の離型材が剥げ、凝固したシリコン塊が鋳型に固着する例もまれにあり、離型材のさらなる向上が望まれていた。 However, in this method, if the thickness of the release material is 1 mm or more, the total amount of the release material to be used increases, so the cost is accordingly generated. If the thickness of the release material is less than 1 mm in order to reduce the cost, In rare cases, the mold release material on the inner surface of the mold in the area where the upper surface of the molten silicon touches, or the mold release material in the area where the plates that make up the mold meet, peel off, and the solidified silicon mass sticks to the mold. Therefore, further improvement of the release material has been desired.
本発明は、上記問題を解決し、シリコン凝固用の鋳型の内面の離型材の総量をできるだけ少なくし、かつ、離型材の破損および剥離を無くし、凝固したシリコンと鋳型とを鋳型の全面で確実に離型させるシリコン凝固用鋳型を提供することを目的とする。 The present invention solves the above problems, reduces the total amount of release material on the inner surface of the mold for solidifying silicon as much as possible, eliminates breakage and peeling of the release material, and ensures solidified silicon and the mold on the entire surface of the mold. An object of the present invention is to provide a silicon coagulation mold that is released from the mold.
本発明を構成する手段は次のとおりである。
(1) 鋳型の内面に離型材を保持させたシリコン凝固用の鋳型において、溶融シリコンの上表面が触れる領域の鋳型内面の離型材の厚さを1mm以上とし、前記領域以外の鋳型内面の離型材の厚さを1mm未満とし、離型材を1mm以上の厚さで塗布する領域の鋳型内面を、塗布する離型材の厚さに合わせくぼませることにより、離型材塗布後は鋳型内面の各面が平らと成ることを特徴とするシリコン凝固用鋳型。
Means constituting the present invention are as follows.
(1) In a silicon solidification mold in which a release material is held on the inner surface of the mold, the thickness of the release material on the inner surface of the mold in the region where the upper surface of the molten silicon touches is 1 mm or more, and the inner surface of the mold other than the above region is separated. The thickness of the mold material is less than 1 mm, and the mold inner surface of the area where the mold release material is applied with a thickness of 1 mm or more is recessed according to the thickness of the mold release material to be applied. A mold for solidifying silicon, characterized in that the surface is flat .
(2) 前記離型材が実質上、シリコンの融点(1414℃)以上の融点を有する粉末と、100℃以上シリコンの融点以下の温度で炭素を生成する樹脂から成ることを特徴とする(1)に記載のシリコン凝固用鋳型。
(2) the release material is substantially a powder having a melting point of melting point (1414 ° C.) or more silicon, characterized in that it consists of a resin which generates carbon at a temperature below the silicon 100 ° C. higher than the melting point (1) 2. A mold for solidifying silicon as described in 1.
(3) 前記樹脂が前記鋳型内で予め30℃以上500℃以下で加熱硬化されてなることを特徴とする(2)に記載のシリコン凝固用鋳型。
( 3 ) The mold for solidifying silicon according to ( 2 ), wherein the resin is heat-cured in the mold at 30 ° C. or more and 500 ° C. or less in advance.
(4) 前記樹脂が前記鋳型内で予め200℃以上1000℃以下で加熱炭化されてなることを特徴とする(2)に記載のシリコン凝固用鋳型。
( 4 ) The mold for solidifying silicon according to ( 2 ), wherein the resin is preliminarily heated and carbonized at 200 ° C. or higher and 1000 ° C. or lower in the mold.
(5) 前記粉末100質量部に対して、前記樹脂が1質量部以上200質量部以下であることを特徴とする(2)〜(4)のいずれかに記載のシリコン凝固用鋳型。
( 5 ) The mold for silicon coagulation according to any one of ( 2 ) to ( 4 ), wherein the resin is 1 part by mass or more and 200 parts by mass or less with respect to 100 parts by mass of the powder.
(6) 前記樹脂がフェノール樹脂であることを特徴とする(2)〜(5)のいずれかに記載のシリコン凝固用鋳型。 ( 6 ) The mold for silicon coagulation according to any one of ( 2 ) to ( 5 ), wherein the resin is a phenol resin.
(7) 前記シリコンの融点以上の融点を有する粉末が、ケイ砂、窒化ケイ素または炭化ケイ素の少なくとも1種であることを特徴とする(2)〜(6)のいずれかに記載のシリコン凝固用鋳型。
( 7 ) The powder for melting the silicon according to any one of ( 2 ) to ( 6 ), wherein the powder having a melting point equal to or higher than the melting point of silicon is at least one of silica sand, silicon nitride, and silicon carbide. template.
(8) 前記ケイ砂の平均粒径が0.1mm以下であることを特徴とする(7)に記載のシリコン凝固用鋳型。
( 8 ) The mold for solidifying silicon according to ( 7 ), wherein the silica sand has an average particle size of 0.1 mm or less.
(9)前記窒化ケイ素の平均粒径が50μm以下であることを特徴とする(7)に記載のシリコン凝固用鋳型。
( 9 ) The silicon coagulation mold according to ( 7 ), wherein the silicon nitride has an average particle size of 50 μm or less.
(10) 前記炭化ケイ素の平均粒径が1mm以下であることを特徴とする(7)に記載のシリコン凝固用鋳型。 (10) The silicon solidification mold according to ( 7 ), wherein the silicon carbide has an average particle size of 1 mm or less.
本発明により、シリコン凝固用の鋳型の内面の離型材の強度を上げることが可能となり、離型材破損の可能性がより低下し、結果、凝固したシリコンと鋳型とを確実に離型させることが可能となった。特に、溶融シリコンの上表面が触れる領域の鋳型内面や、鋳型を構成する板がつき合わされる領域で凝固したシリコン塊が鋳型に固着してしまうという問題が解決された。また、使用する離型材の総量も少なく抑えることができ、離型材のコスト低減も可能となった。 According to the present invention, it becomes possible to increase the strength of the mold release material on the inner surface of the mold for solidifying silicon, and the possibility of breakage of the mold release material is further reduced. As a result, the solidified silicon and the mold can be reliably released. It has become possible. In particular, the problem that the solidified silicon lump in the mold inner surface in the area where the upper surface of the molten silicon touches or in the area where the plates constituting the mold are brought together is fixed to the mold. In addition, the total amount of release material used can be reduced, and the cost of the release material can be reduced.
本発明の主構成は次の通りである。 The main configuration of the present invention is as follows.
鋳型の内面に離型材を保持させたシリコン凝固用の鋳型において、溶融シリコンの上表面が触れる領域の鋳型内面の離型材の厚さを1mm以上とし、他の領域の鋳型内面の離型材の厚さを1mm未満とするシリコン凝固用鋳型である。さらには、鋳型の内面に離型材を保持させたシリコン凝固用の組み立て鋳型において、溶融シリコンの上表面が触れる領域の鋳型内面の離型材の厚さと組み立て鋳型を構成する板がつき合わされる領域の離型材の厚さを1mm以上とし、他の領域の鋳型内面の離型材の厚さは1mm未満とするシリコン凝固用鋳型である。 In a mold for solidifying silicon in which a release material is held on the inner surface of the mold, the thickness of the release material on the inner surface of the mold in the region where the upper surface of the molten silicon touches is 1 mm or more, and the thickness of the release material on the inner surface of the mold in other regions This is a silicon coagulation mold having a thickness of less than 1 mm. Further, in the assembly mold for silicon solidification in which the release material is held on the inner surface of the mold, the thickness of the release material on the inner surface of the mold in the area where the upper surface of the molten silicon touches and the area where the plate constituting the assembly mold is brought together This is a silicon coagulation mold in which the thickness of the release material is 1 mm or more and the thickness of the release material on the inner surface of the mold in the other region is less than 1 mm.
溶融シリコンの上表面が触れる鋳型内面では、溶融シリコンが波打つこと等により離型材が剥がれる危険性が他の領域より多く、万が一にも離型材が剥がれないように、この領域の離型材厚さを厚くすることが有効である。具体的には、離型材厚さを1mm以上とすれば十分である。 On the inner surface of the mold that touches the upper surface of the molten silicon, there is a greater risk of the release material peeling off due to the undulation of the molten silicon than in other areas. It is effective to increase the thickness. Specifically, it is sufficient that the release material thickness is 1 mm or more.
当然、離型材が剥離してしまえば、凝固したシリコンと鋳型が固着してしまい、鋳型の再利用は困難となる。また、シリコンの凝固では、下側から上側へ一方向凝固する場合が多いが、シリコンは凝固するに従い体積膨張するので、溶融シリコンの上表面のラインは凝固に伴い徐々に上昇することになるので、離型材の厚さを1mm以上とする領域は、溶融シリコンの上面が上昇分に見合った幅を持たせることとなる。 Naturally, if the release material is peeled off, the solidified silicon and the mold are fixed, making it difficult to reuse the mold. In the solidification of silicon, unidirectional solidification often occurs from the lower side to the upper side. However, as silicon solidifies, the volume of the upper surface of the molten silicon gradually rises as it solidifies. In the region where the thickness of the release material is 1 mm or more, the upper surface of the molten silicon has a width corresponding to the rise.
本発明では、この上昇分までを含めた領域を溶融シリコンの上表面が触れる領域と呼んでいる。また、溶融シリコンの各温度での密度、凝固シリコンの密度は既知であるので、この領域は鋳型内のシリコン量から算出することができる。 In the present invention, the region including the increased amount is called a region where the upper surface of the molten silicon touches. Further, since the density of molten silicon at each temperature and the density of solidified silicon are known, this region can be calculated from the amount of silicon in the mold.
シリコンの凝固にはカーボン板を組み合わせて直方体形状とした鋳型が使用されることが多いが、組み立て鋳型を構成する板のつき合わせ部分は、板の熱膨張等のために離型材が剥離したり離型材に亀裂が生じる危険性が、他の平らな領域に比べて大きい。このため、板のつき合わせ部分の離型材厚さを他の領域より厚くすることが有効である。この場合も、離型材厚さを1mm以上とすれば十分である。 In order to solidify the silicon, a mold made of a rectangular parallelepiped shape is often used by combining carbon plates, but the mating parts of the plates that make up the assembly mold may be peeled off due to thermal expansion of the plates. The risk of cracks in the release material is greater than in other flat areas. For this reason, it is effective to make the release material thickness of the mating portion of the plate thicker than other regions. Also in this case, it is sufficient that the thickness of the release material is 1 mm or more.
さらに、離型材塗布後に鋳型内面の各面を平らにする目的で、離型材を1mm以上の厚さで塗布する領域の鋳型内面を、塗布する離型材の厚さに合わせくぼませることも有効である。こうすることにより、鋳型内面の離型材の厚さは各部で異なるものの、離型材塗布後は鋳型内面の各面が平らとなり、結果、凹凸の無い平らな面を有したシリコン凝固塊を得ることができ、シリコン塊のその後のハンドリングに有利である。 Furthermore, for the purpose of flattening each surface of the mold inner surface after applying the mold release material, it is also effective to indent the mold inner surface of the area where the mold release material is applied with a thickness of 1 mm or more according to the thickness of the mold release material to be applied. is there. By doing this, although the thickness of the release material on the inner surface of the mold is different in each part, after applying the release material, each surface of the inner surface of the mold becomes flat, and as a result, a silicon solidified mass having a flat surface without unevenness can be obtained. This is advantageous for the subsequent handling of the silicon mass.
離型材としては、実質上、シリコンの融点(1414℃)以上の融点を有する粉末と、100℃以上シリコンの融点以下の温度で炭素を生成する樹脂から成るもので良い。すなわち、シリコン凝固用の鋳型内面に、シリコンの融点(1414℃)以上の融点を有する粉末と高温で炭素を生成する樹脂を混合した後に塗布し、これをシリコン凝固用鋳型とするものである。 The release material may be substantially composed of a powder having a melting point not lower than the melting point of silicon (1414 ° C.) and a resin that generates carbon at a temperature not lower than 100 ° C. and not higher than the melting point of silicon. That is, a powder having a melting point equal to or higher than the melting point of silicon (1414 ° C.) and a resin that generates carbon at a high temperature are mixed and applied to the inner surface of the silicon solidification mold, and this is used as the silicon solidification mold.
樹脂から生成した炭素が粉末を強固に結びつけ、離型材の強度を向上させる。炭素は2000℃程度までは十分な強度を有しているので、シリコンの融点以上の融点を有する粉末を強固に保持することができるし、また、鋳型へも強固に固着することができる。結果として、良好な離型材を形成することができる。 The carbon produced from the resin firmly binds the powder and improves the strength of the release material. Since carbon has a sufficient strength up to about 2000 ° C., it is possible to firmly hold a powder having a melting point equal to or higher than that of silicon, and to firmly adhere to a mold. As a result, a good release material can be formed.
離型材の成分としては、厳密に、シリコンの融点以上の融点を有する粉末と高温で炭素を生成する樹脂のみでなければならないと言うわけではない。最終的に、シリコンの融点以上の融点を有する粉末が炭素で強固に結びつけられた膜が形成されれば良いわけで、初期に塗布される粉末及び樹脂中に、このような膜の形成を妨げる物質が混在していなければ特段の問題はない。 Strictly speaking, the components of the release material are not limited to powders having a melting point higher than that of silicon and resins that generate carbon at high temperatures. Ultimately, it is only necessary to form a film in which a powder having a melting point equal to or higher than the melting point of silicon is firmly bonded with carbon, and this prevents the formation of such a film in the powder and resin to be applied initially. If there are no mixed substances, there is no particular problem.
例えば、粉末中に5質量%程度のシリコンの融点以下の融点を有する粉末が含まれていても、樹脂から生成した炭素と反応し炭化物となり、結果としてシリコンの融点以上の融点を有する物質となるなら、問題はない。また、樹脂中に高温で炭素を生成しない樹脂が10質量%程度含まれていても、一般に、樹脂はシリコンの融点付近の高温では気化もしくは分解気化してしまうので、問題はない。 For example, even if the powder contains a powder having a melting point of about 5% by mass or less of silicon, it reacts with carbon generated from the resin to form a carbide, resulting in a substance having a melting point higher than that of silicon. Then there is no problem. Even if the resin contains about 10% by mass of a resin that does not generate carbon at a high temperature, the resin generally vaporizes or decomposes and vaporizes at a high temperature near the melting point of silicon, so there is no problem.
このような意味において、離型材は実質上、シリコンの融点(1414℃)以上の融点を有する粉末と、炭素を生成する樹脂から構成されていればよい。 In this sense, the release material may be substantially composed of a powder having a melting point equal to or higher than the melting point of silicon (1414 ° C.) and a resin that generates carbon.
樹脂からの炭素生成割合は、あまり少ないと意味が無く、高温で、樹脂の20質量%以上が炭素となって離型材中に残ることが好ましい。実用性からより好ましくは、樹脂の40質量%以上が炭素となって離型材中に残ることが好ましい。 The proportion of carbon produced from the resin is meaningless if it is too small, and it is preferable that 20% by mass or more of the resin becomes carbon and remains in the release material at a high temperature. More preferably from the practicality, it is preferable that 40% by mass or more of the resin becomes carbon and remains in the release material.
一般に、鋳型を昇温する際には、毎分数〜10数℃の速度で、特に特定の温度で保持すること無しにシリコンの融点以上まで昇温する場合が多いが、本発明の離型材を有する鋳型を使用する場合には、30℃以上500℃以下の間の特定の温度で、例えば、200℃で0.1〜10時間程度保持する方がよい場合もあり、さらに好ましくは1〜5時間程度保持する方がよい場合もある。これにより樹脂の硬化をより進め、結果、離型材の強度をより高めることができる。 Generally, when the temperature of the mold is raised, the temperature is often raised to a temperature higher than the melting point of silicon without maintaining at a specific temperature at a rate of several to ten and several degrees per minute. When using the mold which has, it may be better to hold | maintain at the specific temperature between 30 degreeC or more and 500 degrees C or less, for example at 200 degreeC for about 0.1 to 10 hours, More preferably, it is 1-5. Sometimes it is better to hold for about an hour. Thereby, hardening of resin can be advanced further and the intensity | strength of a mold release material can be raised more as a result.
また、本発明の離型材を有する鋳型を使用する場合に、200℃〜1000℃程度の温度範囲の中の特定の温度で、例えば、700℃で0.1〜10時間程度保持する方が良い場合もあり、さらに好ましくは1〜5時間程度保持する方が良い場合もある。これにより樹脂の大部分を炭化させることができ、結果、シリコンの融点以上に到達した時の樹脂から生成する炭素の量を増加させることができる。 Moreover, when using the casting_mold | template which has a mold release material of this invention, it is better to hold | maintain at the specific temperature in the temperature range of about 200 degreeC-about 1000 degreeC, for example, for about 0.1 to 10 hours at 700 degreeC. In some cases, it may be better to hold for about 1 to 5 hours. As a result, most of the resin can be carbonized, and as a result, the amount of carbon generated from the resin when reaching the melting point of silicon or higher can be increased.
離型材中の樹脂の量としては、粉末を結合保持するために、粉末100質量部に対して、樹脂が1質量部以上であることが好ましく、離型効果を発揮するためには、粉末100質量部に対して、樹脂が200質量部以下であることが好ましい。さらに好ましくは、粉末100質量部に対して、樹脂が5質量部以上100質量部以下である。 The amount of resin in the mold release material is preferably 1 part by mass or more of resin with respect to 100 parts by mass of powder in order to bind and hold the powder. It is preferable that resin is 200 mass parts or less with respect to the mass part. More preferably, the resin is 5 parts by mass or more and 100 parts by mass or less with respect to 100 parts by mass of the powder.
樹脂の種類としてはフェノール樹脂を使用することができる。フェノール樹脂には、熱可塑性のものと熱硬化性のものがあるが、共に使用可能である。また、予め、硬化剤を添加し硬化させておく方が取り扱いが便利な場合もある。硬化剤としては、例えば、ヘキサメチレンテトラミン、または、ある種の酸、例えば、スルホン酸系の有機酸等が使用可能である。また、樹脂の種類としては、フェノール樹脂の他に、エポキシ樹脂、アクリル樹脂、フラン樹脂、ピッチ等が使用可能である。 A phenol resin can be used as the type of resin. The phenol resin includes a thermoplastic resin and a thermosetting resin, but both can be used. In some cases, it is more convenient to add a curing agent in advance to cure. As the curing agent, for example, hexamethylenetetramine or a certain kind of acid, for example, a sulfonic acid organic acid or the like can be used. Moreover, as a kind of resin, an epoxy resin, an acrylic resin, a furan resin, a pitch etc. other than a phenol resin can be used.
シリコンの融点以上の融点を有する粉末としては、汚染を少なくする観点からシリコン化合物が使用可能であり、ケイ砂、窒化ケイ素、炭化ケイ素等が好ましい。ただ、本発明は、特にこれらのシリコン化合物の粉末に限定されるわけではない。 As the powder having a melting point equal to or higher than the melting point of silicon, a silicon compound can be used from the viewpoint of reducing contamination, and silica sand, silicon nitride, silicon carbide and the like are preferable. However, the present invention is not particularly limited to powders of these silicon compounds.
粉末の形状としては、ケイ砂では、例えば、平均粒径が0.1mm以下1μm程度以上のものが使用可能である。窒化ケイ素では、例えば、平均粒径が50μm以下1μm程度以上のものが使用可能である。また、炭化ケイ素では、例えば、平均粒径が1mm以下1μm程度以上のものが使用可能であるが、共に、これらの平均粒径に限定されるわけではない。 As the shape of the powder, for example, silica sand having an average particle diameter of 0.1 mm or less and about 1 μm or more can be used. For example, silicon nitride having an average particle diameter of 50 μm or less and about 1 μm or more can be used. Further, for example, silicon carbide having an average particle diameter of 1 mm or less and about 1 μm or more can be used, but both are not limited to these average particle diameters.
今まで、本発明に使用する鋳型としては、主としてカーボン製の組立鋳型を念頭においてきたが、本発明においては特にこのタイプの鋳型に限定されるわけではない。例えば、カーボン製の一体ものの鋳型でも十分に使用可能である。また、材質もカーボンに限定されるわけではなく、例えば、耐火物煉瓦を積み上げ鋳型形状としたものの内面に本発明の離型材を塗布し、シリコンを凝固することも可能である。 Up to now, as the mold used in the present invention, an assembly mold made mainly of carbon has been considered, but the present invention is not particularly limited to this type of mold. For example, an integral mold made of carbon can be sufficiently used. Also, the material is not limited to carbon. For example, it is possible to solidify silicon by applying the release material of the present invention to the inner surface of a stack of refractory bricks and forming a mold shape.
次に、本発明を実施するための最良の形態を詳しく述べる。 Next, the best mode for carrying out the present invention will be described in detail.
鋳型内面に塗布した離型材の厚さが1mm未満の場合は、10μm以上1mm未満が好ましく、離型材の厚さが1mm以上の場合は、1mm以上50mm以下が好ましい、離型材の厚みが10μm未満では離型に問題が無くとも鋳型に傷がつく場合がある。 When the thickness of the release material applied to the inner surface of the mold is less than 1 mm, it is preferably 10 μm or more and less than 1 mm. When the thickness of the release material is 1 mm or more, 1 mm or more and 50 mm or less is preferable. The thickness of the release material is less than 10 μm. Then, even if there is no problem in mold release, the mold may be damaged.
また、離型材の厚みは50mm程度あれば十分であり、離型材に少々クラックが入っても50mmを貫通することはほとんど無く、結果、溶融シリコンは離型材を貫通せず、凝固したシリコンと鋳型を極めて良好に離型することができる。 Further, it is sufficient that the thickness of the release material is about 50 mm, and even if there is a slight crack in the release material, it hardly penetrates 50 mm. As a result, the molten silicon does not penetrate the release material, and solidified silicon and mold Can be released very well.
前者の離型材の厚さが10μm以上1mm未満の場合に関して述べると、例えば、平均粒径が5μm程度のケイ砂と平均粒径が1μm以下の窒化ケイ素粉末を質量比が1:5から5:1程度の範囲で混合し、これに粉末の質量の5〜100%程度のフェノール樹脂を添加し混合する。熱可塑性のフェノール樹脂の場合は、前述した硬化剤を所定量添加するとよい。これを1mm未満の厚さでカーボン製の組立鋳型の内面に塗布すればよい。 When the former release material has a thickness of 10 μm or more and less than 1 mm, for example, silica sand having an average particle size of about 5 μm and silicon nitride powder having an average particle size of 1 μm or less has a mass ratio of 1: 5 to 5: Mix in a range of about 1, and add to this a phenol resin of about 5 to 100% of the mass of the powder. In the case of a thermoplastic phenol resin, a predetermined amount of the aforementioned curing agent may be added. This may be applied to the inner surface of the carbon assembly mold with a thickness of less than 1 mm.
鋳型内に室温でシリコン原料塊を入れ溶解する場合には、離型材を傷つけないために、シリコン原料塊を入れる前に予め離型材を硬化させておく方が好ましい場合がある。このためには、離型材塗布後200℃程度で1時間程度保持すればよい。この工程はカーボンにとって十分低温であるので、カーボン鋳型を使用した場合でも空気雰囲気中で実施可能である。もちろん、アルゴン、窒素等の不活性雰囲気中で実施することも可能である。 When the silicon raw material lump is melted at room temperature in the mold, it is sometimes preferable to cure the release material in advance before putting the silicon raw material lump in order not to damage the release material. For this purpose, it may be held at about 200 ° C. for about 1 hour after the release material is applied. Since this step is sufficiently low for carbon, it can be performed in an air atmosphere even when a carbon mold is used. Of course, it is also possible to carry out in an inert atmosphere such as argon or nitrogen.
また、離型材塗布後は常温のみの硬化で、シリコン原料塊を鋳型に入れた後の昇温中に、200℃程度で1〜2時間程度保持してもよい。鋳型を昇温中に、内部のシリコン原料塊が動き、離型材および鋳型内面を傷つけることが多いが、200℃程度で離型材を十分硬化させれば、この傷を防ぐことができる。 Further, after applying the release material, it may be cured at room temperature only, and held at about 200 ° C. for about 1 to 2 hours during the temperature rise after the silicon raw material lump is put in the mold. While the mold is heated, the silicon raw material lump inside moves in many cases and damages the release material and the inner surface of the mold. However, if the release material is sufficiently cured at about 200 ° C., this damage can be prevented.
上記操作の後に、不活性雰囲気中または真空中で、シリコンの融点以上へ昇温させ、シリコンを溶解後、降温し、シリコンを凝固させる。この際、鋳型下部を冷却し、シリコン融液に温度分布をつけ、シリコンを下方から上方へ一方向凝固させ、各種金属不純物をシリコン上方に集め、シリコンの大部分を高純度化させることが一般的である。 After the above operation, the temperature is raised above the melting point of silicon in an inert atmosphere or in a vacuum, and after melting the silicon, the temperature is lowered to solidify the silicon. At this time, the lower part of the mold is cooled, the silicon melt is given a temperature distribution, the silicon is unidirectionally solidified from the bottom to the top, various metal impurities are collected above the silicon, and most of the silicon is generally purified. Is.
上述の操作と異なり、鋳型内にシリコン融液を注ぎ凝固させる場合は、鋳型内に初めからシリコン原料塊を入れ溶解させる場合よりも、200℃程度での温度保持の意味合いは低下する。 Unlike the above-described operation, when the silicon melt is poured into the mold and solidified, the meaning of maintaining the temperature at about 200 ° C. is lower than when the silicon raw material lump is initially placed in the mold and dissolved.
また、前述したように、昇温中に、例えば700℃程度で1時間程度保持することによりフェノール樹脂の残炭率を高めることができ、結果、フェノール樹脂の使用量を減らすことができるので、経済的である。 Further, as described above, during the temperature increase, for example, by holding for about 1 hour at about 700 ° C., the residual carbon ratio of the phenol resin can be increased, and as a result, the amount of phenol resin used can be reduced. Economical.
以上のようにしてシリコンを凝固させ、冷却後に、カーボン製の組立鋳型を解体すると、得られたシリコン塊と鋳型は固着することが無く、鋳型を何度でも再利用することが可能である。 As described above, when the silicon is solidified and the assembly mold made of carbon is disassembled after cooling, the obtained silicon lump and the mold do not adhere to each other, and the mold can be reused any number of times.
次に、離型材の厚さが1mm以上50mm以下の場合について述べる。この場合、離型材が厚く粉末使用量が増えるので、より安価な粉末を使用する方が実用的である。この観点から、粉末としてケイ砂を使用するとよい。例えば、平均粒径が60μm程度のケイ砂に、質量で10〜100%程度のフェノール樹脂を添加し、混合する。 Next, the case where the thickness of the release material is 1 mm or more and 50 mm or less will be described. In this case, since the release material is thick and the amount of powder used is increased, it is more practical to use a cheaper powder. From this viewpoint, silica sand is preferably used as the powder. For example, phenol resin having a mass of about 10 to 100% is added to and mixed with silica sand having an average particle size of about 60 μm.
この混合物をカーボン製の組立鋳型の内面に、例えば5mm程度の厚みで貼り付ければよい。この後の取扱いは、離型材が1mm未満の場合と本質的に同様である。また、離型材塗布後に鋳型内面を平らにする目的で、離型材を厚く塗布する領域の鋳型内面をくぼませておくことが有利であることも、前述した通りである。 What is necessary is just to affix this mixture on the inner surface of a carbon assembly mold with a thickness of about 5 mm, for example. The subsequent handling is essentially the same as when the release material is less than 1 mm. Further, as described above, it is advantageous to indent the inner surface of the mold in the region where the release material is thickly applied for the purpose of flattening the inner surface of the mold after the release material is applied.
(実施例1)
平均粒径0.7μmの窒化ケイ素70質量部、平均粒径3μmのケイ砂30質量部を100質量部のメタノールで混合後、これにフェノール樹脂50質量部と硬化剤5質量部を添加混合し、離型材原液とした(以下、離型材原液1と記載)。次に、平均粒径60μmのケイ砂100質量部とフェノール樹脂50質量部と硬化剤5質量部に30質量部のメタノールを添加し、混合したところ、粘りのある粘土状の混合物が得られた(以下、離型材2と記載)。
Example 1
After mixing 70 parts by mass of silicon nitride having an average particle diameter of 0.7 μm and 30 parts by mass of silica sand having an average particle diameter of 3 μm with 100 parts by mass of methanol, 50 parts by mass of phenol resin and 5 parts by mass of a curing agent were added and mixed. And a release material stock solution (hereinafter referred to as release material stock solution 1). Next, when 30 parts by mass of methanol was added to and mixed with 100 parts by mass of silica sand having an average particle size of 60 μm, 50 parts by mass of phenol resin and 5 parts by mass of the curing agent, a viscous clay-like mixture was obtained. (Hereinafter referred to as mold release material 2).
内側の一辺および深さが400mmの立方体形状のカーボン製組立鋳型の内面の下面から高さが240〜275mmの領域に離型材2を厚さ5mmにて塗布した。この領域は、鋳型内に導入されるシリコン量と溶融シリコンおよび凝固シリコンの密度から算出した値に上下方向に若干の余裕を持たせたものである。また、鋳型内面の高さが240mm未満の全面に離型材原液1を厚さ0.2mmにて塗布した。その後、離型材2と離型材原液1を20℃にて硬化させた。 The mold release material 2 was applied at a thickness of 5 mm to a region having a height of 240 to 275 mm from the lower surface of the inner surface of the cube-shaped carbon assembly mold having an inner side and a depth of 400 mm. This region is obtained by adding a slight margin in the vertical direction to the value calculated from the amount of silicon introduced into the mold and the density of molten silicon and solidified silicon. Moreover, the mold release material stock solution 1 was applied to the entire surface having a mold inner surface height of less than 240 mm with a thickness of 0.2 mm. Thereafter, the release material 2 and the release material stock solution 1 were cured at 20 ° C.
この鋳型を誘導加熱式の溶解炉を有するチャンバーの中へ設置し、チャンバー内をアルゴン0.1MPaに置換後、溶解炉ではシリコン100kgを1550℃で溶解し、鋳型は抵抗式ヒーターにて、毎分5℃の昇温速度で1550℃まで加熱した。次に、溶解炉内の溶融シリコン100kgを鋳型内へ傾注し、その後、鋳型の温度を徐々に下げ、シリコンを下方から徐々に凝固させた。シリコン全体が凝固した後に、ヒーター等の電源を切り、常温まで炉冷した。 This mold is placed in a chamber having an induction heating type melting furnace, the inside of the chamber is replaced with argon 0.1 MPa, 100 kg of silicon is melted at 1550 ° C. in the melting furnace, and the mold is heated by a resistance heater. The sample was heated to 1550 ° C. at a heating rate of 5 ° C. per minute. Next, 100 kg of molten silicon in the melting furnace was poured into the mold, and then the temperature of the mold was gradually lowered to gradually solidify the silicon from below. After the entire silicon was solidified, the heater and other power sources were turned off and the furnace was cooled to room temperature.
常温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型とシリコン塊は容易に剥離し、角400mmで高さが約265mmのシリコン塊を取り出すことができたが、下から約240〜265mmの部分は離型材厚さに対応し、おおよそ角390mmとなっていた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. In addition, the mold and the silicon lump were easily peeled off, and a silicon lump having a corner of 400 mm and a height of about 265 mm could be taken out, but the portion of about 240 to 265 mm from the bottom corresponds to the mold release material thickness, It was 390 mm. Each part of the dismantled mold was not damaged and could be used again.
(実施例2)
平均粒径0.7μmの窒化ケイ素70質量部、平均粒径3μmのケイ砂30質量部を100質量部のメタノールで混合後、これにフェノール樹脂50質量部と硬化剤5質量部を添加混合し、離型材原液とした(以下、離型材原液1と記載)。次に、平均粒径60μmのケイ砂100質量部とフェノール樹脂50質量部と硬化剤5質量部に30質量部のメタノールを添加し、混合したところ、粘りのある粘土状の混合物が得られた(以下、離型材2と記載)。
(Example 2)
After mixing 70 parts by mass of silicon nitride having an average particle diameter of 0.7 μm and 30 parts by mass of silica sand having an average particle diameter of 3 μm with 100 parts by mass of methanol, 50 parts by mass of phenol resin and 5 parts by mass of a curing agent were added and mixed. And a release material stock solution (hereinafter referred to as release material stock solution 1). Next, when 30 parts by mass of methanol was added to and mixed with 100 parts by mass of silica sand having an average particle size of 60 μm, 50 parts by mass of phenol resin and 5 parts by mass of the curing agent, a viscous clay-like mixture was obtained. (Hereinafter referred to as mold release material 2).
内側の一辺および深さが400mmの立方体形状のカーボン製組立鋳型の内面の下面から高さが242〜277mmの領域に離型材2を厚さ5mmにて塗布した。この領域は実施例1と同じ方法で求めたものである。さらに、鋳型内面の242mmより下の領域の各コーナー部にも、最大厚さ5mmにて離型材2を塗布した。また、鋳型内面の高さが242mm未満の全面に離型材原液1を厚さ0.2mmにて塗布した。 The mold release material 2 was applied at a thickness of 5 mm to a region having a height of 242 to 277 mm from the lower surface of the inner surface of the cube-shaped carbon assembly mold having an inner side and a depth of 400 mm. This region is obtained by the same method as in Example 1. Furthermore, the mold release material 2 was applied to each corner portion in an area below 242 mm on the inner surface of the mold with a maximum thickness of 5 mm. Moreover, the mold release material stock solution 1 was applied to the entire surface having a mold inner surface height of less than 242 mm with a thickness of 0.2 mm.
その後、離型材2と離型材原液1を20℃にて硬化させた。この鋳型を誘導加熱式の溶解炉を有するチャンバーの中へ設置し、チャンバー内をアルゴン0.1MPaに置換後、溶解炉ではシリコン100kgを1550℃で溶解し、鋳型は抵抗式ヒーターにて、毎分5℃の昇温速度で1550℃まで加熱した。次に、溶解炉内の溶融シリコン100kgを鋳型内へ傾注し、その後、鋳型の温度を徐々に下げ、シリコンを下方から徐々に凝固させた。シリコン全体が凝固した後に、ヒーター等の電源を切り、常温まで炉冷した。 Thereafter, the release material 2 and the release material stock solution 1 were cured at 20 ° C. This mold is placed in a chamber having an induction heating type melting furnace, the inside of the chamber is replaced with argon 0.1 MPa, 100 kg of silicon is melted at 1550 ° C. in the melting furnace, and the mold is heated by a resistance heater. The sample was heated to 1550 ° C. at a heating rate of 5 ° C. per minute. Next, 100 kg of molten silicon in the melting furnace was poured into the mold, and then the temperature of the mold was gradually lowered to gradually solidify the silicon from below. After the entire silicon was solidified, the heater and other power sources were turned off and the furnace was cooled to room temperature.
常温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型とシリコン塊は容易に剥離し、角400mmで高さが約267mmのシリコン塊を取り出すことができたが、下から約242〜267mmの部分は離型材厚さに対応し、おおよそ角390mmとなっていた。また、シリコン塊の底面及び側面の約242mmより下のコーナー部分は、離型材の厚みに応じコーナーが丸みを帯びていた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Also, the mold and the silicon lump were easily peeled off, and a silicon lump with a corner of 400 mm and a height of about 267 mm could be taken out, but the portion of about 242 to 267 mm from the bottom corresponds to the release material thickness, It was 390 mm. In addition, the corners below about 242 mm on the bottom and side surfaces of the silicon lump were rounded according to the thickness of the release material. Each part of the dismantled mold was not damaged and could be used again.
(実施例3)
平均粒径0.7μmの窒化ケイ素70質量部、平均粒径3μmのケイ砂30質量部を100質量部のメタノールで混合後、これにフェノール樹脂50質量部と硬化剤5質量部を添加混合し、離型材原液とした(以下、離型材原液1と記載)。次に、平均粒径60μmのケイ砂100質量部とフェノール樹脂50質量部と硬化剤5質量部に30質量部のメタノールを添加し、混合したところ、粘りのある粘土状の混合物が得られた(以下、離型材2と記載)。
(Example 3)
After mixing 70 parts by mass of silicon nitride having an average particle diameter of 0.7 μm and 30 parts by mass of silica sand having an average particle diameter of 3 μm with 100 parts by mass of methanol, 50 parts by mass of phenol resin and 5 parts by mass of a curing agent were added and mixed. And a release material stock solution (hereinafter referred to as release material stock solution 1). Next, when 30 parts by mass of methanol was added to and mixed with 100 parts by mass of silica sand having an average particle size of 60 μm, 50 parts by mass of phenol resin and 5 parts by mass of the curing agent, a viscous clay-like mixture was obtained. (Hereinafter referred to as mold release material 2).
内側の一辺および深さが400mmの立方体形状のカーボン製組立鋳型を用いたが、内面の高さが240〜275mmの領域が約5mmくぼんでおり、さらに、鋳型内面の高さが240mmより下の各辺の領域も最大で約5mmくぼんだ鋳型を使用した。内面の高さが240〜275mmの領域のくぼみとこれより下の各辺のくぼみには最大厚さ5mmにて離型材2を塗布した。 A cube-shaped carbon assembly mold with an inner side of 400 mm and a depth of 400 mm was used, but the inner surface height of 240 to 275 mm was recessed by about 5 mm, and the inner surface of the mold was lower than 240 mm. A mold with a maximum of about 5 mm in each side area was also used. The mold release material 2 was applied at a maximum thickness of 5 mm to the indentation in the region where the height of the inner surface was 240 to 275 mm and the indentation on each side below this.
さらに、鋳型内面の240mmより下のくぼみの無い領域には離型材原液1を厚さ0.2mmにて塗布した。結果として、できあがった離型材付きの鋳型内面は、離型材の厚さは各部で異なるにもかかわらず、ほぼ完全な角400mmの直方体形状となった。 Furthermore, the mold release material stock solution 1 was applied at a thickness of 0.2 mm to an area having no depression below 240 mm on the inner surface of the mold. As a result, the finished mold inner surface with the release material became a substantially complete rectangular parallelepiped shape with a corner of 400 mm, although the thickness of the release material was different in each part.
その後、離型材2と離型材原液1を20℃にて硬化させた。この鋳型を誘導加熱式の溶解炉を有するチャンバーの中へ設置し、チャンバー内をアルゴン0.1MPaに置換後、溶解炉ではシリコン100kgを1550℃で溶解し、鋳型は抵抗式ヒーターにて、毎分5℃の昇温速度で1550℃まで加熱した。次に、溶解炉内の溶融シリコン100kgを鋳型内へ傾注し、その後、鋳型の温度を徐々に下げ、シリコンを下方から徐々に凝固させた。シリコン全体が凝固した後に、ヒーター等の電源を切り、室温まで炉冷した。 Thereafter, the release material 2 and the release material stock solution 1 were cured at 20 ° C. This mold is placed in a chamber having an induction heating type melting furnace, the inside of the chamber is replaced with argon 0.1 MPa, 100 kg of silicon is melted at 1550 ° C. in the melting furnace, and the mold is heated by a resistance heater. The sample was heated to 1550 ° C. at a heating rate of 5 ° C. per minute. Next, 100 kg of molten silicon in the melting furnace was poured into the mold, and then the temperature of the mold was gradually lowered to gradually solidify the silicon from below. After the entire silicon had solidified, the heater and other power sources were turned off and the furnace was cooled to room temperature.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型とシリコン塊は容易に剥離し、角400mmで高さが約265mmのほぼ完全な直方体形状のシリコン塊を取り出すことができた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Moreover, the mold and the silicon lump were easily peeled off, and an almost perfect rectangular parallelepiped shaped silicon lump having a corner of 400 mm and a height of about 265 mm could be taken out. Each part of the dismantled mold was not damaged and could be used again.
(実施例4)
平均粒径0.3μmの炭化ケイ素70質量部を平均粒径0.7μmの窒化ケイ素70質量部の代わりに使用した以外は、実施例1と同様の実験を行った。
Example 4
An experiment similar to Example 1 was performed, except that 70 parts by mass of silicon carbide having an average particle diameter of 0.3 μm was used instead of 70 parts by mass of silicon nitride having an average particle diameter of 0.7 μm.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型とシリコン塊は容易に剥離し、実施例1と同様のシリコン塊を取り出すことができた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Further, the mold and the silicon lump were easily peeled off, and the same silicon lump as in Example 1 could be taken out. Each part of the dismantled mold was not damaged and could be used again.
(実施例5)
平均粒径100μm程度の炭化ケイ素100質量部を平均粒径60μmのケイ砂100質量部の代わりに使用した以外は、実施例1と同様の実験を行った。
(Example 5)
An experiment similar to Example 1 was performed except that 100 parts by mass of silicon carbide having an average particle diameter of about 100 μm was used instead of 100 parts by mass of silica sand having an average particle diameter of 60 μm.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型と離型材、および離型材とシリコン塊は容易に剥離し、実施例1と同様のシリコン塊を取り出すことができた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Further, the mold and release material, and the release material and silicon lump were easily peeled off, and the same silicon lump as in Example 1 could be taken out. Each part of the dismantled mold was not damaged and could be used again.
(実施例6)
フェノール樹脂量を40質量部としたこと以外は、実施例1と同様の実験を行なった。
(Example 6)
The same experiment as in Example 1 was performed except that the amount of phenol resin was 40 parts by mass.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型と離型材は容易に剥離したが、離型材とシリコン塊は、大部分においては容易に剥離したものの、一部で、離型材へのシリコン含浸が認められた。これは問題とはならないものであり若干の作業でシリコン塊から離型材を除去することができた。シリコン塊としては、実施例1と同様のシリコン塊を取り出すことができた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Further, the mold and the release material were easily peeled off, but the release material and the silicon lump were easily peeled off for the most part, but some of the molds were impregnated with silicon. This was not a problem, and the release material could be removed from the silicon mass with some work. As a silicon lump, the same silicon lump as in Example 1 could be taken out. Each part of the dismantled mold was not damaged and could be used again.
(実施例7)
鋳型を抵抗式ヒーターにて、毎分5℃の昇温速度で昇温中に、途中、700℃で1時間保持したこと以外は、実施例6と同様の実験を行った。
(Example 7)
An experiment similar to that of Example 6 was performed, except that the mold was held at 700 ° C. for 1 hour during the heating with a resistance heater at a heating rate of 5 ° C. per minute.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型と離型材、および離型材とシリコン塊は容易に剥離し、離型材へのシリコン含浸も無かった。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Further, the mold and the release material, and the release material and the silicon lump were easily peeled off, and the release material was not impregnated with silicon.
取り出されたシリコン塊の形状、特性等は、実施例6と同様であった。 The shape, characteristics, and the like of the extracted silicon lump were the same as in Example 6.
実施例6でも何ら問題が無かったが、本実施例7から、フェノール樹脂量を減らす際には、昇温中に700℃で保持した方が離型材へのシリコン含浸が無いことが分かる。これは、フェノール樹脂を減らすと生成する炭素も減少するが、鋳型昇温中に700℃で保持したことにより、生成する炭素量が回復したことによると考えられる。また、当然のことながら、離型材へシリコンの含浸が無い方が、凝固後のシリコン塊の取り扱いに有利である。 Although there was no problem in Example 6, it can be seen from Example 7 that when the amount of phenol resin is reduced, the mold is not impregnated with silicon when held at 700 ° C. during the temperature rise. This is considered to be due to the fact that the amount of carbon produced is recovered by maintaining at 700 ° C. during the temperature rise of the mold, although the amount of carbon produced is reduced when the phenol resin is reduced. As a matter of course, it is advantageous for handling the silicon mass after solidification that the mold release material is not impregnated with silicon.
(実施例8)
平均粒径0.7μmの窒化ケイ素70質量部、平均粒径3μmのケイ砂30質量部を100質量部のメタノールで混合後、これにフェノール樹脂50質量部と硬化剤5質量部を添加混合し、離型材原液とした(以下、離型材原液1と記載)。次に、平均粒径60μmのケイ砂100質量部とフェノール樹脂50質量部と硬化剤5質量部に30質量部のメタノールを添加し、混合したところ、粘りのある粘土状の混合物が得られた(以下、離型材2と記載)。内側の一辺および深さが400mmの立方体形状のカーボン製組立鋳型の内面の下面から高さが140〜165mmの領域に離型材2を厚さ5mmにて塗布した。この領域の算出はシリコン量から実施例1と同様の方法で行った。また、鋳型内面の高さが140mm未満の全面に離型材原液1を厚さ0.2mmにて塗布した。
(Example 8)
After mixing 70 parts by mass of silicon nitride having an average particle diameter of 0.7 μm and 30 parts by mass of silica sand having an average particle diameter of 3 μm with 100 parts by mass of methanol, 50 parts by mass of phenol resin and 5 parts by mass of a curing agent were added and mixed. And a release material stock solution (hereinafter referred to as release material stock solution 1). Next, when 30 parts by mass of methanol was added to and mixed with 100 parts by mass of silica sand having an average particle size of 60 μm, 50 parts by mass of phenol resin and 5 parts by mass of the curing agent, a viscous clay-like mixture was obtained. (Hereinafter referred to as mold release material 2). The mold release material 2 was applied at a thickness of 5 mm to a region 140 to 165 mm in height from the lower surface of the inner surface of the cube-shaped carbon assembly mold having an inner side and a depth of 400 mm. This region was calculated from the amount of silicon in the same manner as in Example 1. Further, the release material stock solution 1 was applied to a whole surface having a mold inner surface height of less than 140 mm with a thickness of 0.2 mm.
その後、離型材2と離型材原液1を20℃にて硬化させた。この鋳型をチャンバー内に設置し、5cm程度の大きさのシリコン原料塊60kgを鋳型内へ挿入した。チャンバー内をアルゴン0.1MPaに置換後、鋳型を抵抗式ヒーターにて、毎分5℃の昇温速度で1550℃まで昇温し、1時間保持した。その後、鋳型の温度を徐々に下げ、シリコンを下方から徐々に凝固させた。シリコン全体が凝固した後に、ヒーター等の電源を切り、室温まで炉冷した。 Thereafter, the release material 2 and the release material stock solution 1 were cured at 20 ° C. This mold was placed in a chamber, and 60 kg of a silicon raw material block having a size of about 5 cm was inserted into the mold. After replacing the inside of the chamber with 0.1 MPa of argon, the mold was heated to 1550 ° C. at a heating rate of 5 ° C. per minute with a resistance heater and held for 1 hour. Thereafter, the temperature of the mold was gradually lowered to gradually solidify the silicon from below. After the entire silicon had solidified, the heater and other power sources were turned off and the furnace was cooled to room temperature.
室温まで冷却後、鋳型を取り出し解体を行なった。シリコン塊は鋳型から剥離し、角400mmで高さが約160mmのシリコン塊を取り出すことができたが、下から約140〜160mmの部分は離型材厚さに対応し、おおよそ角390mmとなっていた。また、鋳型内面に数ヶ所のごく軽微な引っかき傷が付いていたが、鋳型の再使用は可能で、特に問題とはならないものであった。 After cooling to room temperature, the mold was taken out and disassembled. The silicon lump was peeled off from the mold, and a silicon lump having a corner of 400 mm and a height of about 160 mm could be taken out, but the portion of about 140 to 160 mm from the bottom corresponded to the release material thickness and was approximately 390 mm in corner. It was. In addition, there were several slight scratches on the inner surface of the mold, but the mold could be reused and was not particularly problematic.
(実施例9)
鋳型を抵抗式ヒーターにて、毎分5℃の昇温速度で昇温中に、途中、200℃で1時間保持したこと以外は、実施例8と同様の実験を行った。
Example 9
An experiment similar to that of Example 8 was performed except that the mold was held at 200 ° C. for 1 hour during the temperature rising at a rate of 5 ° C. per minute with a resistance heater.
室温まで冷却後、鋳型を取り出したところ、鋳型に何ら損傷は無く、鋳型を容易に解体することができた。また、鋳型とシリコン塊は容易に剥離し、実施例8と同様のシリコン塊を取り出すことができた。解体した鋳型の各部品には何ら損傷が無く、再び使用することができた。 When the mold was taken out after cooling to room temperature, the mold was not damaged and the mold could be easily disassembled. Further, the mold and the silicon lump were easily peeled off, and the same silicon lump as in Example 8 could be taken out. Each part of the dismantled mold was not damaged and could be used again.
実施例8と比較すると、始めから鋳型内にシリコン原料塊を挿入する際には、200℃で1時間保持する方が、より好ましいことが分かる。 Compared with Example 8, when inserting a silicon raw material lump into a casting_mold | template from the beginning, it turns out that it is more preferable to hold | maintain at 200 degreeC for 1 hour.
本方法により、凝固したシリコン塊と鋳型を確実に離型させることができ、鋳型の繰り返し使用回数を飛躍的に高めることができる。さらに、溶融シリコンの鋳型外への漏れを完全に防止でき、装置本体に損傷を与える可能性も大いに低下した。本方法と一方向凝固法を使用することにより、太陽電池用のウエハを切り出すための多結晶シリコンインゴットを、極めて安価に製造することが可能である。 By this method, the solidified silicon lump and the mold can be reliably released, and the number of repeated use of the mold can be dramatically increased. Furthermore, leakage of molten silicon out of the mold can be completely prevented, and the possibility of damaging the apparatus body is greatly reduced. By using this method and the unidirectional solidification method, it is possible to produce a polycrystalline silicon ingot for cutting a wafer for solar cells at a very low cost.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006010509A JP4889306B2 (en) | 2006-01-18 | 2006-01-18 | Silicone coagulation mold with mold release material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006010509A JP4889306B2 (en) | 2006-01-18 | 2006-01-18 | Silicone coagulation mold with mold release material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007191345A JP2007191345A (en) | 2007-08-02 |
| JP4889306B2 true JP4889306B2 (en) | 2012-03-07 |
Family
ID=38447336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006010509A Expired - Fee Related JP4889306B2 (en) | 2006-01-18 | 2006-01-18 | Silicone coagulation mold with mold release material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4889306B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8859034B2 (en) | 2009-01-28 | 2014-10-14 | Kyocera Corporation | Ingot mold for silicon ingot and method for making the same |
| JP5725716B2 (en) * | 2009-01-28 | 2015-05-27 | 京セラ株式会社 | Mold forming method, solar cell element substrate manufacturing method, solar cell element manufacturing method, and silicon ingot manufacturing mold |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005104743A (en) * | 2003-09-26 | 2005-04-21 | Kyocera Corp | Silicon casting mold |
-
2006
- 2006-01-18 JP JP2006010509A patent/JP4889306B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007191345A (en) | 2007-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| FI84343C (en) | FOERFARANDE FOER FRAMSTAELLNING AV ETT SJAELVBAERANDE KERAMISKT KOMPOSITSTYCKE OCH ETT SAODANT KOMPOSITSTYCKE. | |
| KR20080082978A (en) | Crucibles for Molten Silicon Processing | |
| CN102527594A (en) | Quartz crucible for ingot casting and manufacturing method thereof | |
| CN105000890A (en) | Preparation method of large-size silicon nitride crucible | |
| WO2003076363A1 (en) | Method for manufacturing silicon carbide sintered compact jig and silicon carbide sintered compact jig manufactured by the method | |
| KR101579912B1 (en) | Method of manufacturing a graphite-aluminum compound and use thereof | |
| CN103298983B (en) | crucible | |
| JP4192070B2 (en) | Silicon casting mold and manufacturing method thereof | |
| JP4889306B2 (en) | Silicone coagulation mold with mold release material | |
| US20230234894A1 (en) | Method for producing metal matrix composite and method for preparing preform | |
| JPH11248363A (en) | Laminated crucible for producing silicon ingot and method for producing the same | |
| JP4493515B2 (en) | Silicone solidification mold with carbon release material | |
| JP4838591B2 (en) | Silicone coagulation mold and method for producing the same | |
| TW201300449A (en) | Rare earth permanent magnet and production method for rare earth permanent magnet | |
| JP5117085B2 (en) | Metal-ceramic composite material and manufacturing method thereof | |
| JP2005046866A (en) | Silicon casting mold and manufacturing method thereof | |
| JP2002292613A (en) | Manufacturing method of ceramic molded body | |
| CN102717052A (en) | Ceramic-metal composite product and preparation method thereof | |
| JP3270798B2 (en) | Method for producing silicon carbide sintered body | |
| JP3944700B2 (en) | Rare earth alloy melting crucible and rare earth alloy | |
| JP4379163B2 (en) | Manufacturing method of crucible for manufacturing high purity silicon ingot | |
| JP4931432B2 (en) | Molds for the production of polycrystalline silicon slabs | |
| JP2001267163A (en) | Method for manufacturing rare-earth magnet and base plate for sintering | |
| CN101531534A (en) | Y2O3 and Al2O3 compound ceramic tube and preparation method thereof | |
| TWI239283B (en) | Blank body forming device and forming process thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080902 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20080902 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20101210 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110118 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111115 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111213 |
|
| R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141222 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |