JP4889562B2 - Joining apparatus and joining method - Google Patents

Description

  The present invention relates to a pretreatment technique in pressure bonding between two substrates such as wafers as bonding objects by a bonding apparatus.

  Conventionally, for example, two substrates made of a wafer or the like are used as a bonding object, and as a bonding method between the two substrates, a bonding apparatus, for example, a tank in a rare gas atmosphere such as Ar, and the like are provided in this tank. The sample surface of each substrate is ion-sputtered using a substrate bonding apparatus that includes a pair of ion guns, a pressure welding jig provided in the tank, and a substrate that is a sample attached to the pressure welding jig. After that, there was a substrate bonding method in which each substrate was pressed.

  FIG. 7 shows a conventional substrate bonding method by pressure welding (see, for example, Patent Document 1). In FIG. 7, 101 is an ultra-high vacuum chamber, 102 and 103 are ion guns, 107 is a compressor, 108 and 109 are pressure contact portions, and 110 and 111 are sample pieces.

Further, as an example of using a shutter in surface treatment using a neutral argon beam, there is a treatment method as shown in FIG. 8 (see, for example, Patent Document 2).
In FIG. 8, 201 is a support for placing a sample, 202 is a mica sample, 203 is a saddle field ion gun, 204 is a high-voltage electric wire connected to a high-voltage power source, 205 is a gas supply pipe for supplying argon, 206 is a cooling water supply pipe, 207 is a vacuum chamber, 208 is an exhaust gas port, and 209 is a shutter.

Here, the shutter 209 is used only for the purpose of preventing the neutral argon beam from being irradiated onto the mica sample 202 until the neutral argon beam output from the saddle field type ion gun 203 is stabilized.
Japanese Patent Laid-Open No. 56-53886 JP-A-8-259218

However, in the conventional techniques described in Patent Document 1 and Patent Document 2 as described above, in order to maintain a high-quality bonding state or surface treatment state in the pressure bonding between substrates or the surface treatment of the mica sample 202, The atmosphere at the time of ion sputtering in the vacuum vessel is changed to a high vacuum of 6 × 10 ⁻⁵ Torr (7.98 × 10 ⁻³ Pa) to 1 × 10 ⁻⁶ Torr (1.33 × 10 ⁻⁴ Pa). There is a need.

  This is because it is necessary to prevent the surface contaminants and natural oxide film scraped by sputtering from re-depositing on the surface of the substrate or mica sample 202 as well as performing sputtering with ions during sputtering. It is. In order to realize this, when a gas such as Ar is not supplied, it is necessary to make an ultrahigh vacuum.

  For this reason, it takes time to reach a desired degree of vacuum, and a device such as an ultra-high vacuum container or a vacuum pump with a large exhaust speed is required as a device. Was.

  The present invention solves the above-mentioned conventional problems, and in the pressure bonding between substrates as a bonded product, the bonding surface of the substrate can be efficiently reduced in terms of work efficiency while efficiently reducing the cost. The present invention provides a bonding apparatus and a bonding method capable of reliably cleaning the substrate and realizing high-quality bonding between substrates.

  In order to solve the above-described problems, the present invention irradiates an atomic beam to two joints placed in a vacuum vessel so that the joint surfaces face each other in the vertical direction. It is a bonding method and a bonding apparatus that pressurize and bond after cleaning, and by intermittently irradiating two bonded objects by opening and closing the shutter when irradiating this atomic beam. Features.

  In addition, the present invention is to pressurize two bonded objects placed in a vacuum vessel so that their bonded surfaces face each other in the vertical direction after irradiating an atomic beam to clean the bonded surfaces. A joining method and a joining apparatus for joining together, and when irradiating the atomic beam, the shutter is opened and closed so that the irradiation timing and non-irradiation timing of the atomic beam are simultaneously applied to the first bonded body and the second bonded body. Thus, the atomic beam is intermittently applied to the two joints.

  In addition, the present invention is to pressurize two bonded objects placed in a vacuum vessel so that their bonded surfaces face each other in the vertical direction after irradiating an atomic beam to clean the bonded surfaces. A joining method and a joining apparatus for joining together, and when irradiating the atomic beam, the shutter is opened and closed so that the irradiation timing and non-irradiation timing of the atomic beam are simultaneously applied to the first bonded body and the second bonded body. Thus, the atomic beam is intermittently applied to the two bonded objects, and the two bonded objects are moved in the vertical direction in synchronism with this.

  In addition, the present invention is to pressurize two bonded objects placed in a vacuum vessel so that their bonded surfaces face each other in the vertical direction after irradiating an atomic beam to clean the bonded surfaces. A joining method and a joining apparatus for joining together, and when irradiating the atomic beam, the shutter is opened and closed so that the irradiation timing and non-irradiation timing of the atomic beam are simultaneously applied to the first bonded body and the second bonded body. As a result, the atomic beam is intermittently irradiated to the two joints, and the shutter is opened from the side where the distance from the atomic beam junction is inclined with respect to the joint during the irradiation. It is characterized in that it is closed from the side closer to the joint.

  In addition, the present invention is to pressurize two bonded objects placed in a vacuum vessel so that their bonded surfaces face each other in the vertical direction after irradiating an atomic beam to clean the bonded surfaces. A joining method and a joining apparatus for joining together, and when irradiating the atomic beam, the shutter is opened and closed so that the irradiation timing and non-irradiation timing of the atomic beam are simultaneously applied to the first bonded body and the second bonded body. As a result, the atomic beam is intermittently irradiated to the two joints, and the two joints are moved in the vertical direction in synchronization with this, and when the beam is not irradiated, the vicinity of the joint surface An inert gas is supplied to the gas.

  As described above, according to the present invention, floating contaminants in the vicinity of the bonding surface of the bonded object are exhausted by intermittently irradiating the bonded object with the atomic beam in the vacuum vessel when the atomic beam is not irradiated. Therefore, it is possible to prevent reattachment to contaminants and bonded objects such as a natural oxide film without creating an ultra-high vacuum even when the gas is not supplied in the vacuum vessel.

  Therefore, in the pressure bonding between the bonded objects, the bonded surface of the bonded object can be reliably cleaned efficiently and efficiently in terms of workability while efficiently suppressing the cost. High quality bonding can be realized.

The bonding method according to claim 1 of the present invention is the first bonding surface and the second bonding material placed so that the bonding surfaces face each other in the vacuum vessel. A method of bonding by applying pressure after each irradiation with an atomic beam, and opening and closing a shutter provided in the middle of each atomic beam when each of the bonding surfaces is irradiated with the atomic beam. Thus, each atomic beam is intermittently irradiated so that the timing of non-irradiation between the atomic beams is the same.

The bonding method according to claim 2, in claim 1, wherein in synchronism with the opening and closing of each shutter, and wherein the to movement joining the first joining material and the second bonding object.

According to a third aspect of the present invention, there is provided a bonding method according to the first or second aspect, wherein the atomic beam is irradiated with a perpendicular line of the respective bonding surfaces when the atomic beam is irradiated. Irradiate each beam so as to have a desired acute angle, and at the start of irradiation in the intermittent irradiation of each atomic beam, open the shutter from the one where the distance between the emission point of the atomic beam and the bonding surface is far, When the irradiation is stopped in the intermittent irradiation of the atomic beam, the shutter is closed from the side where the distance between the emission point of the atomic beam and the bonding surface is short .

The bonding method according to claim 4, in any one of claims 1 to 3, wherein during the irradiation stopped in the intermittent irradiation of each atom beam, that supplies an inert gas to the bonding surface of the respective Features.

According to a fifth aspect of the present invention, there is provided a bonding apparatus in which the first bonding object and the second bonding object placed so that the respective bonding surfaces face each other in the vacuum container are respectively attached to the respective bonding surfaces. In a joining apparatus that pressurizes and joins after irradiating a beam, a holding mechanism for holding each of the first joined article and the second joined article, and a halfway of each atomic beam that irradiates each of the joined surfaces Each of the shutters is provided with a shutter so that each of the atomic beams is intermittently applied to the respective bonding surfaces, and between the atomic beams, irradiation during the intermittent irradiation and non-irradiation are performed. It is characterized in that it is configured to open and close so that the timing is the same.

The bonding apparatus according to a sixth aspect of the present invention is the bonding apparatus according to the fifth aspect, wherein the holding mechanism holds the first bonded object and the second bonded object in synchronization with opening and closing of the shutters. The first bonded object and the second bonded object are configured to move in the direction of bonding , respectively .

According to a seventh aspect of the present invention, there is provided a bonding apparatus according to the fifth or sixth aspect, wherein a central axis in an irradiation direction of each atomic beam has a desired acute angle with a normal to each of the bonding surfaces, and When the irradiation is started in the intermittent irradiation of each atomic beam, the shutter is opened from the far distance between the emission point of the atomic beam and the bonding surface, and when the irradiation is stopped in the intermittent irradiation of each atomic beam, The structure is characterized in that the atomic beam exit point and the joint surface are closed from the closer side .

The bonding apparatus according to claim 8 is configured to supply an inert gas to each of the bonding surfaces when the irradiation is stopped in the intermittent irradiation of each atomic beam in any of claims 5 to 7 . It is characterized by that.

Hereinafter, a bonding apparatus and a bonding method showing embodiments of the present invention will be specifically described with reference to the drawings. Here, as a bonding apparatus and a bonding method, for example, a substrate bonding apparatus and a substrate bonding method in which two substrates such as wafers are used as a bonding object and the two substrates are pressure bonded to each other will be described as an example. .
(Embodiment 1)
The joining apparatus and joining method of Embodiment 1 of this invention are demonstrated.

  FIG. 1 is a front view showing the configuration of the shutter open state in the substrate bonding apparatus as the bonding apparatus according to the first embodiment, and FIG. 2 is the shutter closed state in the substrate bonding apparatus as the bonding apparatus according to the first embodiment. It is a front view which shows a structure.

  As shown in FIG. 1, the substrate bonding apparatus as the bonding apparatus according to the first embodiment includes a chamber 3 that accommodates the first substrate 1 and the second substrate 2 as bonded objects and isolates them from the outside air. A vacuum pump (not shown) for reducing the pressure in the chamber 3, an exhaust pipe (not shown) connecting the chamber 3 and the vacuum pump, an exhaust port 4 connected to the exhaust pipe, the first substrate 1 and the first substrate A holding mechanism 5 for holding two substrates 2, an atomic beam 6 for sputter etching the surfaces of the first substrate 1 and the second substrate 2, a beam source 7 for emitting the atomic beam 6, and a beam source 7. A gas supply system (not shown) for supplying gas, a pressurizing mechanism 8 for pressurizing the first substrate 1 on the second substrate 2, and a beam source 7 are accommodated in the first substrate. 1 and the second substrate 2 from the beam source 7 Beam source chamber 9 for releasing comprises an openable and closable shutter 10 an injection port of the atom beam 6 is attached to the beam source chamber 9.

  For mass production, a transfer chamber (not shown) equipped with a transfer robot connected to the chamber 3 shown in the figure, and the substrates 1 and 2 are repeatedly supplied with air and vacuum. It is desirable to have a load lock chamber (not shown) that can.

  A process flow diagram at this time is shown in FIG. As shown in FIG. 3, first, the substrates 1 and 2 are supplied to the load lock chamber (atmosphere) (step S301). Next, the load lock chamber is evacuated (step S302). Next, the substrates 1 and 2 are transferred from the load lock chamber to the transfer chamber (step S303). Next, the substrates 1 and 2 are transferred from the transfer chamber to the process chamber 3 (step S304). Next, the two substrates 1 and 2 are positioned with respect to the holding mechanism 5 (step S305). Next, the shutter 10 is closed and the beam source 7 is turned on (step S306). Next, the shutter 10 is changed from the closed state to the open state (step S307). Next, the atomic beams 6 are intermittently irradiated onto the two substrates 1 and 2 respectively (step S308). Next, the shutter 10 is closed or the beam source 7 is turned off (step S309). Next, the first substrate 1 is pressed against the second substrate 2 by the pressurizing mechanism 8 (step S310). Next, the bonded substrates 1 and 2 are transferred to the transfer chamber (step S311). Next, the substrates 1 and 2 bonded from the transfer chamber are transferred to the load lock chamber (step S312). Finally, the load lock chamber is opened to the atmosphere and the bonded substrates 1 and 2 are taken out (step S313).

  The first substrate 1 and the second substrate 2 are semiconductors such as silicon, compound semiconductors, metals such as gold, copper, and aluminum, ceramics, quartz, glass, or those formed on the surface thereof. Yes, the combination of the first substrate 1 and the second substrate 2 may be made of different materials. Further, in FIG. 1, both the first substrate 1 and the second substrate 2 are held as bonded objects in the chamber 3, and such a configuration is desirable from the viewpoint of bonding quality. May be held in the chamber.

Here, the inside of the chamber 3 is evacuated to a pressure of 1.0 × 10 ⁻² Pa or less, preferably about 5.0 × 10 ⁻⁵ Pa, and then applied to the first substrate 1 and the second substrate 2. On the other hand, the atomic beam 6 is irradiated intermittently.

  The time of the non-irradiation period in the intermittent irradiation by the atomic beam 6 is determined by an optimum value depending on the size of the chamber 3 and the exhaust capability of the apparatus. However, the contaminants generated when the atomic beam 6 is irradiated are sufficiently exhausted. In addition, it is necessary to shorten the time required for the cleaning process from the viewpoint of production efficiency. Specifically, the non-irradiation time is defined as P · V / (Po, where V is the volume of the chamber 3, P is the pressure of the chamber 3 during beam irradiation, Po is atmospheric pressure, and S is the effective exhaust speed of the exhaust system. -It is desirable to make it about S).

  In this way, by intermittently irradiating each of the substrates 1 and 2 with the atomic beam 6, the surface of the substrate 1, 2 is irradiated with the organic material or natural oxide film while the atomic beam 6 is being irradiated. The process of scraping off contaminants such as the above by sputter etching and removing the suspended contaminants while they are not irradiated with the beam to clean the bonded surfaces is repeated.

For example, when the bonding surface is Au, the natural oxide film and contaminants near the surface rapidly decrease to about 10% when about 50% of the surface enters the depth of 7 to 10 nm, and deeper than that. Since there is almost no change even when entering, beam irradiation and non-irradiation are repeated until the thickness is cut by 7 to 10 nm. By doing in this way, it becomes possible to clean each joining surface of the board | substrates 1 and 2 by the pressure in the chamber 3 during sputter etching with the degree of vacuum of about 1 Pa to 2 × 10 ⁻² Pa.

  Here, a saddle field type beam source will be described as an example of the beam source 7. However, other beam sources such as an ion beam may be used. The beam source 7 supplies Ar gas and applies a DC voltage, thereby generating plasma inside the beam source chamber 9 and emitting an atomic beam 6 from the exit of the beam source chamber 9. In order to intermittently irradiate the atomic beam 6, the gas supply to the beam source 7 and the voltage application can be turned on and off. However, due to the configuration of the beam source 7, it takes about several minutes to stabilize the atomic beam 6. Necessary.

  For this reason, the beam source 7 continues to emit the atomic beam 6 and the substrate 1 and 2 which are the objects to be bonded are irradiated with the atomic beam 6 intermittently. 9 and the shutter 10 are provided, and the states of FIGS. 1 and 2 are repeated.

  In addition, if the beam is simply blocked by the shutter 10 without providing the beam source chamber 9, Ar atoms enter the vicinity of the object to be joined, and contaminants floating near the object surface are exhausted. In order to prevent Ar atoms emitted from the beam source 7 from diffusing near the bonding surfaces of the substrates 1 and 2, a beam source chamber 9 is provided, and an exhaust port provided therein is provided. Ar atoms are exhausted from 4.

  In addition, when cleaning is performed by intermittently irradiating the bonding surfaces of a plurality of substrates with the atomic beam 6 in the chamber 3, it is desirable to simultaneously perform irradiation and non-irradiation timings on the plurality of substrates. Without this, for example, when the first substrate 1 is irradiated with the atomic beam 6 and the second substrate 2 is not irradiated with the beam 6, the surface of the first substrate 1 is scraped by the atomic beam 6. The contaminated material becomes floating matter and adheres to the surface of the second substrate 2 to be contaminated.

  In the method of bonding by removing the surface contaminants and the natural oxide film that obstruct the bonding by cleaning the bonding surface as used in the present invention with an atomic beam, the time until the bonding surface is brought into contact after the cleaning is completed. Greatly affects the bonding quality. That is, it is necessary to contact and pressurize the joint surfaces as soon as possible after cleaning.

  For this reason, after the positioning of the joining surfaces of the two substrates 1 and 2 is made as close as possible using the raising and lowering operation of the pressurizing mechanism 8, the two substrates are returned to the position where the atomic beam 6 is irradiated, and the beam To clean the joint surface. In this way, by positioning the two substrates 1 and 2 before the cleaning step, the first substrate 1 is immediately placed on the second substrate 2 by the pressurizing mechanism 8 after the beam irradiation. Can be contacted and pressurized.

  Regarding the positional relationship between the beam source 7 and the substrates 1 and 2, there is a method of irradiating the beam perpendicular to the bonding surface of the wafer substrate, but here the irradiation is performed obliquely. This is because, when the main body of the beam source 7 is arranged on the substrates 1 and 2, particles generated from the components of the beam source 7 fall on the substrates 1 and 2 to hinder the bonding between the substrates 1 and 2. However, this is to prevent such a problem.

The structure of a well-known saddle field beam source is shown in FIG. In FIG. 9, 301 is an anode, 302 is a casing serving as a cathode, 303 is a power source, and 304 is a beam irradiation port.
As can be seen from the structure of FIG. 9, the uniformity of the atomic beam 6 is easily obtained in the axial direction of the rod-shaped anode 301, but there is a problem that it is difficult to obtain uniformity in the direction perpendicular thereto. For this reason, in the cleaning process of the bonding surface, it is conceivable to rotate the substrates 1 and 2 to improve the uniformity of processing in the bonding surface.

  However, in recent years, in the bonding between the substrates 1 and 2, the pattern has been miniaturized in order to improve the performance of the device, and the two substrates 1 and 2 are positioned with high accuracy such as micron order or submicron order. It has been desired to join them. In order to improve productivity, the substrate size has been increased, and the positioning accuracy in the θ direction between the two substrates 1 and 2 has a great influence on the outer peripheral portion. For this reason, it is considered that rotating the substrate to clean the bonding surface adversely affects the quality of the device.

  For this reason, as shown in FIG. 10, the saddle field type beam source 7 is disposed, and the bonding surface is cleaned while moving the substrates 1 and 2 in the bonding direction (vertical direction in the drawing). can get. By moving in the bonding direction, the substrate surfaces can be evenly cleaned without deteriorating the positioning accuracy of the two substrates.

  The angle θ formed between the atomic beam 6 and the wafer substrate surface during the cleaning is preferably about 0 <θ <60 °. Also, with respect to the vertical movement of the substrates 1 and 2 and the timing of the shutter opening / closing operation with respect to the atomic beam 6, the wafer substrates 1 and 2 are moved from the lower limit to the upper limit (or from the viewpoint of uniform processing) while the shutter 10 is opened once. The movement from the upper limit to the lower limit) is repeated an integer number of times. Further, the uniformity of substrate surface cleaning is improved by decreasing the moving speed and increasing the irradiation time as the distance between the substrates 1 and 2 and the beam source 7 increases.

Alternatively, when the shutter 10 is opened and closed, the shutter 10 is preferably opened in the direction indicated by the arrow in FIG. 2 from the shutter closed state in FIG. 2 to the shutter open state in FIG. The movement from the shutter open state to the closed state is reversed. This is because the atomic beam 6 is obliquely applied to the substrates 1 and 2, so that a portion where the distance between the substrates 1 and 2 and the beam source 7 is short and a portion which is far away are formed. Since the irradiation intensity of No. 6 becomes weak, the processing speed of the substrate surface becomes slow. For this reason, the longer the distance, the longer the irradiation time of the beam, leading to improvement in the uniformity of processing.
(Embodiment 2)
The joining apparatus and joining method of Embodiment 2 of this invention are demonstrated.

FIG. 4 is a front view showing a configuration of a substrate bonding apparatus as a bonding apparatus according to the second embodiment, which is the same as that shown in FIG.
As shown in FIG. 4, the substrate bonding apparatus as the bonding apparatus according to the second embodiment irradiates the substrates 1 and 2 with the atomic beam 6 when the atomic beams 6 are intermittently irradiated onto the substrates 1 and 2 that are the bonded objects. When the gas is not supplied, an inert gas such as nitrogen or Ar is supplied from the gas inlet 11 to the vicinity of the bonding surfaces of the substrates 1 and 2, so that the contaminants sputtered by the atomic beam 6 are bonded to the bonding surfaces of the substrates 1 and 2. In addition to preventing reattachment to the substrate, exhausting to the exhaust port 4 can keep the bonding surfaces of the substrates 1 and 2 clean. The gas introduction port 11 is preferably disposed on the opposite side of the exhaust port 4 with respect to the substrates 1 and 2 so that the supplied gas is exhausted without remaining on the substrate bonding surface.
(Embodiment 3)
A joining apparatus and joining method according to Embodiment 3 of the present invention will be described.

FIG. 5 is a front view showing a configuration of a substrate bonding apparatus as a bonding apparatus according to the third embodiment. In the substrate bonding apparatus as the bonding apparatus according to the third embodiment, as shown in FIG. 5, a beam source 7 having a very short beam stabilization time compared to the intermittent irradiation period of the atomic beam 6 is used. It is an embodiment. In this case, it is not necessary to newly provide the gas inlet 11 as shown in FIG. 4, and the same effect as in FIG. 4 can be obtained by supplying only Ar gas from the beam source 7 when the beam is not irradiated.
(Embodiment 4)
The joining apparatus and joining method of Embodiment 4 of this invention are demonstrated.

  FIG. 6 is a front view showing a configuration of a substrate bonding apparatus as a bonding apparatus according to the fourth embodiment. The substrate bonding apparatus as the bonding apparatus according to the fourth embodiment cleans the bonding surfaces of the two substrates 1 and 2 as a bonded object, and then turns the first substrate 1 into the second substrate 2 by the pressurizing mechanism 8. When bonding is performed by contact and pressure, a clean state can be maintained by supplying gas from the gas inlet 11 to the substrate surface even after the cleaning process by the atomic beam 6 as shown in FIG. it can. Thereby, better bonding quality can be obtained.

  The bonding apparatus and the bonding method of the present invention can clean the surface of an object without making the inside of a vacuum vessel an ultra-high vacuum, and can realize high quality and high productivity. It can be used in various technical fields where two objects need to be joined with high quality, including assembly and sealing of electronic parts and mechanical parts made by technology.

The front view which shows the shutter open state in the joining apparatus of Embodiment 1 of this invention The front view which shows the shutter closed state in the joining apparatus of Embodiment 1 Process flow diagram showing a bonding method in the bonding apparatus of the first embodiment The front view which shows the structure of the joining apparatus of Embodiment 2 of this invention. The front view which shows the structure of the joining apparatus of Embodiment 3 of this invention. The front view which shows the structure of the joining apparatus of Embodiment 4 of this invention. Explanatory drawing of the pressure welding method by the conventional substrate bonding equipment Explanatory drawing of the processing method of the argon beam by the conventional substrate bonding apparatus The perspective view which shows the structure of the saddle field type beam source in the joining apparatus of embodiment of this invention The front view which shows the structure in the case of a saddle field type atomic beam as a joining apparatus of the embodiment

Explanation of symbols

1 First substrate (joint)
2 Second substrate (joint)
3 Chamber 4 Exhaust port 5 Holding mechanism 6 Atomic beam 7 Beam source 8 Pressurizing mechanism 9 Beam source chamber 10 Shutter 11 Gas inlet 101 Ultra-high vacuum chamber 102 Ion gun 103 Ion gun 107 Compressor 108 Pressure contact portion 109 Pressure contact portion 110 Sample piece DESCRIPTION OF SYMBOLS 111 Sample piece 201 Support stand 202 Mica sample 203 Saddle field type ion gun 204 High voltage electric wire 205 Gas supply pipe 206 Cooling water supply pipe 207 Vacuum chamber 208 Exhaust gas port 209 Shutter 301 Anode 302 Case (cathode)
303 Power supply 304 Beam exit

Claims (8)

The first bonded body and the second bonded body placed so that the respective bonding surfaces face each other in the vacuum vessel are irradiated with an atomic beam on each of the bonding surfaces, and then bonded by pressing. A joining method for
When each of the bonding surfaces is irradiated with the atomic beam, each of the atomic beams is opened and closed by opening and closing a shutter provided in the middle of each of the atomic beams so that the non-irradiation timing is simultaneously between the atomic beams. A bonding method characterized by intermittently irradiating a beam . Wherein in synchronization with the opening and closing of the shutter, the bonding method according to claim 1, wherein the moving in the direction of joining the first joining material and the second bonding object. When irradiating each of the atomic beams, each of the atomic beams is irradiated such that the central axis of each irradiation direction has a desired acute angle with the normal of each of the bonding surfaces, and
When starting irradiation in the intermittent irradiation of each atomic beam, open the shutter from the far distance between the emission point of the atomic beam and the bonding surface,
3. The bonding according to claim 1 , wherein when the irradiation is stopped in the intermittent irradiation of each of the atomic beams, the shutter is closed from the side where the distance between the emission point of the atomic beam and the bonding surface is short. Method. 4. The bonding method according to claim 1 , wherein an inert gas is supplied to each of the bonding surfaces when irradiation is stopped in the intermittent irradiation of each atomic beam. 5. The first bonded body and the second bonded body placed so that the respective bonding surfaces face each other in the vacuum vessel are irradiated with an atomic beam on each of the bonding surfaces, and then bonded by pressing. In the joining device to
A holding mechanism for holding each of the first bonded article and the second bonded article;
A shutter is provided in the middle of each atomic beam that irradiates each of the bonding surfaces,
Each shutter
Opening and closing so that each of the atomic beams is intermittently irradiated to the respective bonding surfaces, and the timing of irradiation and non-irradiation at the time of the intermittent irradiation are simultaneously between the atomic beams. A joining apparatus characterized by comprising. The holding mechanism;
While holding each of the first joint and the second joint, the first joint and the second joint are moved in a direction to join the first joint and the second joint in synchronization with opening and closing of the shutters. The joining apparatus according to claim 5 , wherein the joining apparatus is configured as described above. The center axis in the irradiation direction of each atomic beam is configured to have a desired acute angle with the normal to the respective joint surfaces, and
Each shutter is
At the start of irradiation in the intermittent irradiation of each atomic beam, the distance between the emission point of the atomic beam and the bonding surface is opened from the far side,
7. The bonding according to claim 5 , wherein when the irradiation is stopped in the intermittent irradiation of each atomic beam, the bonding is configured such that the distance between the emission point of the atomic beam and the bonding surface is closed from the shorter side. apparatus. 8. The bonding apparatus according to claim 5 , wherein an inert gas is supplied to each of the bonding surfaces when the irradiation is stopped in the intermittent irradiation of each atomic beam. 9.

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