JP4890483B2 - Antenna device - Google Patents

Description

  INDUSTRIAL APPLICABILITY The present invention is used to realize a higher gain antenna such as a chip antenna. Particularly, when realizing a system-on-package and a system-in-package in which an active device and an antenna device are integrated, a high gain can be effectively increased. The present invention relates to an antenna device to be realized.

Conventionally, high gain of a single element antenna has been achieved. As an example of the configuration studied as the method, FIG. 7 shows an antenna device 200 with a metal wall (see Patent Document 1). 7, 11 is a microstrip patch, 13 is a dielectric substrate, 14 is a ground plane, 17 is a feed point, 18 is a feed line substrate, 19 is a feed line, and 20 is a cylinder. This antenna device 200 is a microstrip antenna having a high gain by providing a metal wall as a basic configuration.
Patent No. 3026171 specification

However, the conventional apparatus described above still has the following problems.
First, in recent years, when a package or the like provided with an antenna device is manufactured, system-on-package or system-in-package is required. That is, it is required to integrate the substrate used for the package and the antenna device.
However, when the antenna device 200 described above is used, the substrate and the antenna device 200 cannot be integrated. That is, it is necessary to mount the antenna device 200 on the substrate.

Therefore, a predetermined area is required on the substrate. Therefore, depending on the size of the package using the substrate, it may be difficult to mount the antenna device 200. That is, when this antenna device 200 is used, there is a limit to miniaturization of a package or the like in which the antenna device 200 is mounted.
Further, when the antenna device 200 is mounted, it is necessary to route the line on the substrate, so that the line loss increases and the gain cannot be increased effectively.

  Further, when the antenna device 200 described above is used, Patent Document 1 shows only a gain up to about 10 dBi, and it has been difficult to increase the gain further by itself. Therefore, in order to obtain a gain of 10 dBi or more, it is necessary to configure an array antenna by arranging a plurality of antenna devices 200. However, when an array antenna is configured, more area is required on the substrate, and more line routing is required, which further increases line loss. Therefore, it has been difficult to increase the gain with the array antenna.

  The present invention has been made in view of the above-described circumstances, and the object thereof is to be integrated with a substrate material for mounting a semiconductor device and mounted even if a package or the like formed using the substrate material is miniaturized. It is possible to realize an antenna device capable of increasing the gain with a simple configuration that is possible and does not require the feeding line.

The antenna device according to the present invention includes a dielectric substrate having a multilayer structure formed by stacking a plurality of dielectric layers, and an upper surface of the predetermined dielectric layer sandwiched between other dielectric layers. and placed feeding the planar antenna, the upper surface of the at least two layers of above the dielectric layer from the dielectric layer and the dielectric material layer in which the power supply plane antenna are arranged, respectively in a plan view It is arranged so as to surround the planar antenna for feeding while being overlapped , and gradually expands from the one arranged in the lower dielectric layer toward the one arranged in the upper dielectric layer. A plurality of circular metal rings formed, and the upper surface of the dielectric layer above the dielectric layer on which the planar antenna for power feeding is disposed, the planar antenna for feeding is centered when viewed in plan When And it is characterized in that it comprises a plurality of parasitic elements which are arranged so as not to overlap with the radially and the power-feeding planar antenna, and Te.
Note that the plan view means a state in which the antenna device is observed from the top surface and a metal ring is projected on the bottom surface.

  The antenna device according to the present invention is characterized in that the dielectric substrate is formed by the dielectric layer made of a ceramic substrate.

  The antenna device according to the present invention is characterized in that the dielectric substrate is formed of the dielectric layer made of a high dielectric constant substrate having a relative dielectric constant of 5 or more.

The antenna device according to the present invention, the metal ring is most below the dielectric layer on the inner peripheral radius of what is being arranged, the dielectric wavelength of an electromagnetic wave the power supply plane antenna transmits or receives 1.39 wavelength or more and 2.77 wavelength or less.
The in-dielectric wavelength is the wavelength of electromagnetic waves propagating in the dielectric.

Further, in the antenna device according to the present invention, the dielectric substrate has a substrate thickness not less than 0.22 wavelengths and not more than 0.32 wavelengths of the dielectric wavelength of the electromagnetic wave transmitted or received by the planar antenna for feeding. It is a feature.

  According to the antenna device of the present invention, it can be mounted even if a package formed using the substrate material is integrated with the substrate material for mounting the semiconductor device, and the feeder line needs to be routed. It is possible to realize an antenna device that achieves high gain with a simple configuration that does not.

[First Embodiment]
Hereinafter, a first embodiment of an antenna device according to the present invention will be described with reference to FIG.
FIG. 1A shows a top view of the antenna device 100 of the present embodiment, and FIG. 1B shows a cross-sectional view of the antenna device 100.
As shown in FIGS. 1A and 1B, the antenna device 100 includes a multi-layered dielectric substrate 3 formed by overlapping a plurality of dielectric layers 3a, and a predetermined dielectric layer. A feed microstrip antenna (planar antenna) 1 disposed on the upper surface of 3a so as to be sandwiched between other dielectric layers 3a, and a dielectric layer 3a in which the feed microstrip antenna 1 is disposed or the dielectric layer A plurality of metal rings (metal rings) 2 disposed on the upper surface of at least two of the dielectric layers 3a above 3a so as to surround the feeding microstrip antenna 1 while overlapping each other when seen in a plan view; Have.

More specifically, the dielectric substrate 3 is formed of a dielectric layer 3a made of, for example, a low-temperature fired ceramic substrate or a high-temperature fired ceramic substrate (ceramic substrate) suitable for MMIC mounting or SOP configuration. The dielectric layer 3a is not limited to these ceramic substrates, but is preferably a high dielectric constant substrate (relative dielectric constant of 5 or more and 300 or less).
Further, in the antenna device 100 of this embodiment, as shown in FIG. 1B, the dielectric substrate 3 is formed by overlapping five dielectric layers 3a having a uniform layer thickness. The number of dielectric layers 3a is not limited to five, and may be less than five or more than five. Further, the thickness of the dielectric layer 3a may vary among the layers.
A ground plane 4 is disposed on the lower surface of the lowermost dielectric layer 3a (hereinafter referred to as the lowermost layer 3a), and the feeding microstrip antenna 1 is disposed on the upper surface of the lowermost layer 3a. A metal ring 2 is arranged on the upper surface of each dielectric layer 3a above the lower layer 3a and the lowermost layer 3a.

  The feeding microstrip antenna 1 has a square shape as shown in FIG. 1A, and is connected to the feeding element 1a by, for example, via feeding as shown in FIG. 1B. The feeding method to the feeding microstrip antenna 1 is not limited to via feeding, but feeding by pin coupling, coaxial feeding, microstrip feeding by a microstrip line, and electromagnetic coupling using an open stub of a microstrip line from the back side. Electromagnetic coupling power supply or the like may be used.

  As shown in FIGS. 1 (a) and 1 (b), the metal ring 2 goes from what is arranged in the lower dielectric layer 3a to what is arranged in the upper dielectric layer 3a. It is formed so as to expand gradually. More specifically, the metal ring 2 is first disposed on the upper surface of each dielectric layer 3a so as to be concentric with the feeding microstrip antenna 1 when viewed in plan. Further, as shown in FIG. 1 (b), the metal ring 2 has an inner peripheral radius of the one disposed on the dielectric layer 3a immediately above the inner peripheral radius of the one disposed on the lowermost layer 3a. , It is formed so as to be longer by an enlarged length L. Further, the metal ring 2 disposed in the upper dielectric layer 3a is formed such that the radius of the inner periphery gradually becomes longer by an enlarged length L. That is, the metal ring 2 has a cross section including the center of the power feeding microstrip antenna 1. When the antenna device 100 is viewed in cross section, the perpendicular to the lowermost layer 3 a and the inner peripheral surface of the plurality of metal ring 2 The tangent is formed so as to form a predetermined enlargement angle θ.

  According to the antenna device 100 formed in this way, the feeding microstrip antenna 1 fed by the feeding element 1a can transmit and receive electromagnetic waves. That is, the feeding microstrip antenna 1 is disposed inside the dielectric substrate 3, and the dielectric substrate 3 and the antenna device 100 can be integrated.

  In particular, the power supply microstrip is overlapped when viewed in plan on the upper surface of at least two layers of the dielectric layer 3a on which the power supply microstrip antenna 1 is disposed or the dielectric layer 3a above the dielectric layer 3a. It arrange | positions so that the strip antenna 1 may be enclosed. In addition, since the distance between the dielectric layers 3a is extremely short, when the antenna device 100 is operated, the plurality of metal rings 2 act like metal walls erected so as to surround the power feeding microstrip antenna 1. To do. For this reason, the gain of the antenna device 100 can be increased.

  Further, the metal ring 2 is formed so as to gradually expand from the one disposed on the lower dielectric layer 3a toward the one disposed on the upper dielectric layer 3a. Accordingly, the plurality of metal rings 2 act like a conical metal wall having a small opening below. In other words, the plurality of metal rings 2 serve as a horn-shaped metal wall and form a horn antenna together with the feeding microstrip antenna 1. For this reason, it is possible to further increase the gain of the antenna device 100.

Moreover, since the board | substrate and the antenna apparatus 100 are integrated as mentioned above, the antenna apparatus 100 is not mounted on a board | substrate. As a result, the antenna device 100 can be reliably mounted even when a miniaturized package or the like is formed, and the line loss can be minimized because the feeding line or the like is not required. .
Further, the antenna device 100 can be realized with a simple configuration in which the feeding microstrip antenna 1 and the metal ring 2 are simply sandwiched between the dielectric layers 3a.
In addition, since the above-described effects are exhibited, the dielectric substrate 3 on which the antenna device 100 is mounted is suitable for system-on-package and system-in-package.

  The dielectric substrate 3 is formed of a dielectric layer 3a made of a low-temperature fired ceramic substrate or a high-temperature fired ceramic substrate. Therefore, the dielectric substrate 3 can be formed by a normal ceramic manufacturing process. Thereby, cost reduction of the antenna device 100 can be achieved. In addition, since the ceramic substrate has a track record in terms of heat dissipation and manufacturing accuracy as a package substrate, the reliability of the antenna device 100 can be improved.

[Second Embodiment]
Next, a second embodiment of the antenna device according to the present invention will be described with reference to FIG.
FIG. 2A shows a top view of the antenna device 150 of this embodiment, and FIG. 2B shows a cross-sectional view of the antenna device 150. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is omitted.
The second embodiment and the first embodiment differ with respect to the presence or absence of the parasitic element 5.

  More specifically, in this embodiment, as shown in FIGS. 2A and 2B, a plurality of parasitic elements 5 are provided above the feeding microstrip antenna 1. More specifically, as shown in FIG. 2 (b), the antenna device 150 includes a dielectric layer 3a immediately above the feeding microstrip antenna 1, and an upper surface of the dielectric layer 3a. In addition, four parasitic elements 5 having a square shape are arranged radially. That is, as shown in FIG. 2A, the parasitic element 5 includes an X direction parallel to a predetermined side of the dielectric substrate 3 from the center of the feeding microstrip antenna 1 and a Y direction substantially orthogonal to the X direction. Are arranged symmetrically with respect to the feeding microstrip antenna 1 by being shifted by a predetermined distance. The center of the square-shaped power feeding microstrip antenna 1 means the intersection of diagonal lines of the antenna.

  According to the antenna device 150 according to the present invention, since the parasitic element 5 is provided above the feeding microstrip antenna 1, a higher gain can be achieved particularly when the metal ring 2 is downsized. it can. For this reason, the antenna device 150 can be downsized while maintaining a high gain. In addition, by using the parasitic element 5, the directivity suitable for the application can be controlled by adjusting the antenna directivity. As a result, the antenna device 150 can be used more variously.

  As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included. For example, in the above embodiment, the microstrip antenna is used as the planar antenna. However, the present invention is not limited to this. If the planar antenna is unidirectional, a printed dipole antenna with a reflector, a spiral antenna, or the like may be used. .

  In addition, the shape of the metal ring 2 in the antenna device of the present invention may be, for example, an elliptical shape, a square shape, a rectangular shape, or the like in addition to the circular shape as in the above embodiment. The same operational effects can be achieved. Moreover, in the said embodiment, although the metal ring 2 was arrange | positioned on the upper surface of the five dielectric layers 3a, it does not matter as long as it is arrange | positioned on the upper surface of at least 2 layers of dielectric layers 3a.

  Further, the shapes of the feeding microstrip antenna 1 and the parasitic element 5 may be, for example, an elliptical shape or a rectangular shape other than the square shape as in the above-described embodiment. An effect can be produced.

  In the above embodiment, the dielectric substrate 3 is formed of the dielectric layer 3a made of a low-temperature fired ceramic substrate or a high-temperature fired ceramic substrate. However, the present invention is not limited to this. For example, the dielectric layer 3a may be a resin substrate coated with a ceramic material.

  In the above embodiment, the four parasitic elements 5 are arranged above the feeding microstrip antenna 1 in a radial manner with respect to the antenna 1, but the present invention is not limited to this. For example, the number of parasitic elements 5 is not limited to four elements, and may be less than four elements or more than four elements. Further, the arrangement and shape are not limited to those shown in the present embodiment. That is, the parasitic element 5 is not limited as long as one or a plurality of parasitic elements 5 are arranged vertically above the feeding microstrip antenna 1 or a plurality are arranged above the antenna 1.

  Further, the metal ring 2 has an inner radius (hereinafter referred to as an inner radius) of the one disposed on the upper surface of the lowermost layer 3a (hereinafter referred to as the metal ring 2 of the lowermost layer 3a). It is preferable that the wavelength within the dielectric of the electromagnetic wave transmitted or received by the feeding microstrip antenna 1 is not less than 1.39 wavelengths and not more than 2.77 wavelengths. As a result, the gain of the antenna device can be secured in a higher gain state (12 dBi or more), and the antenna device can be downsized, and a package or the like for mounting the antenna device can be downsized.

  The substrate thickness of the dielectric substrate 3 is preferably such that the substrate thickness of the dielectric substrate 3 is not less than 0.22 wavelengths and not more than 0.32 wavelengths of the dielectric wavelength. As a result, the gain of the antenna device can be ensured to 10 dBi. If the substrate thickness is less than 0.2 wavelength or greater than 0.32 wavelength, it is difficult to ensure a gain of 10 dBi. Thereby, the gain of the antenna device can be further increased.

  Further, it is preferable to use a high dielectric constant substrate having a relative dielectric constant of 5 or more as the dielectric layer 3a. According to this, the dielectric wavelength of the electromagnetic wave transmitted or received by the antenna device can be shortened. Accordingly, even when electromagnetic waves having the same frequency are transmitted or received, the size can be reduced as compared with an antenna device using a substrate having a low dielectric constant.

  Next, the results of Example 1 to Example 3 in which data related to gain characteristics were measured using the antenna device according to the above embodiment will be described. The outline of each example will be described. First, in Example 1, the relationship between the inner radius of the metal ring 2 and the gain characteristic was investigated. And in Example 2, it investigated about the relationship between the expansion condition of the internal radius of the metal ring 2 which expands as it goes upwards from the downward direction, and a gain characteristic. Furthermore, in Example 3, the relationship between the substrate thickness of the dielectric substrate 3 and the gain characteristics was investigated. Finally, in Example 4, the relationship between the parasitic element 5 and the gain characteristic was investigated.

[Example 1]
In Example 1, the gain characteristic of the antenna device when the inner radius of the metal ring 2 was changed was measured.
In Example 1, the antenna device 100 shown in the first embodiment described above was used. More specifically, a low-temperature fired ceramic substrate (relative dielectric constant: εr = 7.7, dielectric loss tangent: tan δ = 0.002 at 10 GHz) is used for the dielectric layer 3a, and the layer thickness of each layer is 0. 1 mm. That is, the power feeding microstrip antenna 1 is arranged 0.1 mm above the ground plane 4. The antenna had a side of 0.78 mm, and the feeding point was shifted from the center of the element by 0.25 mm along the X direction. Further, the metal ring 2 has a strip shape of 1.0 mm, and the inner radius is 0.2 mm (enlarged length L) from the metal ring 2 of the lowermost layer 3a toward the metal ring 2 disposed above. It is formed so as to increase in length.
Further, an electromagnetic wave in the 60 GHz band (wavelength: λ = 5 mm) was used for measurement, and a moment method was used for analysis. When an electromagnetic wave in the 60 GHz band is used, the dielectric wavelength λ ₀ is λ ₀ = λ × 1 / (εr) ^1/2 = 1.8 (mm).
Under these conditions, the gain characteristic of the antenna device 100 was measured by gradually changing the inner radius of the metal ring 2 of the lowermost layer 3a from 2 mm to 5 mm. In addition, when changing the inner radius of the metal ring 2 of the lowermost layer 3a, the inner radius of the upper metal ring 2 was also changed so as to meet the above-described conditions.

The results of this example are shown in FIG. In FIG. 3, the horizontal axis is the inner radius (mm) of the metal ring 2 of the lowermost layer 3a, and the vertical axis is the gain characteristic (dBi). From the figure, even when the inner radius of the metal ring 2 is 2 mm, a high gain exceeding 10 dBi can be obtained, and when the inner radius is 2.5 mm or more, a gain of 12 dBi or more, which is a higher gain state, is obtained. It can be seen that it can be secured.
Therefore, first, it was confirmed that the antenna device 100 according to the present invention has a high gain.
In addition, it was confirmed that the antenna device 100 with high gain can be downsized because the metal ring 2 has a high gain even if it is about 2 mm.
Furthermore, it was confirmed that a higher gain state of 12.0 dBi or more could be secured when the inner radius of the metal ring 2 of the lowermost layer 3a was 2.5 mm or more and 5 mm or less. When the range of the change in the inner radius is converted into the dielectric wavelength of the dielectric substrate 3, it is 1.39λo to 2.77λo. That is, when the inner radius of the metal ring 2 of the lowermost layer 3a is 1.39 wavelengths or more and 2.77 wavelengths or less of the dielectric wavelength, the gain of the antenna device 100 is in a high gain state of 12.0 dBi or more. As a result, the inner radius of the metal ring 2 of the lowermost layer 3a is 2.5 mm to 5.0 mm, and it was confirmed that the antenna device 100 can be downsized. That is, by using the antenna device 100 according to the present invention, the high-gain antenna device 100 can be mounted and a miniaturized package can be manufactured.

[Example 2]
In Example 2, the gain characteristic of the antenna device when the expansion length L of the inner radius was changed was measured.
Each configuration of the antenna device 100 used in the second embodiment is substantially the same as that used in the first embodiment. However, the radius of the metal ring 2 of the lowermost layer 3a was 3.0 mm. And the expansion length L of an inner radius which becomes long as it goes to the metal ring 2 arrange | positioned upwards from the metal ring 2 of the lowest layer 3a changes in 0.2 mm increments from -0.2 mm to 0.6 mm. Thus, the gain characteristic of the antenna device 100 was measured. Note that the expansion length L of −0.2 mm means that the inner radius of the metal ring 2 gradually decreases as it goes upward.

  The results of this example are shown in FIG. In FIG. 4, the horizontal axis is the enlarged length L (mm), and the vertical axis is the gain characteristic (dBi). From the figure, it is formed so that it gradually expands from the metal ring 2 arranged in the lower dielectric layer 3a toward the metal ring 2 arranged in the upper dielectric layer 3a. It was confirmed that the gain characteristic was improved. In particular, the expansion length L at which the gain is 12 dBi or more is 0.11 mm to 0.26 mm. When this is converted into an enlarged angle θ, it is in the range of 6.5 degrees to 14.9 degrees. That is, it can be seen that when the metal ring 2 is formed so that the expansion angle θ is 6.5 degrees or more and 14.9 degrees or less, the gain is particularly increased.

Example 3
In Example 3, the gain characteristics of the antenna device when the substrate thickness was changed were measured.
Each configuration of the antenna device 100 used in the third embodiment is substantially the same as that used in the first embodiment. However, the radius of the metal ring 2 of the lowermost layer 3a was 3.0 mm. Then, the gain characteristics of the antenna device 100 were measured by gradually changing the thickness of the dielectric substrate 3 from 0.3 mm to 0.7 mm by uniformly changing the thickness of each dielectric layer 3a. .

The results of this example are shown in FIG. In FIG. 5, the horizontal axis represents the substrate thickness (mm) of the dielectric substrate 3, and the vertical axis represents the gain characteristic (dBi). From the figure, the substrate thickness at which the gain is 10 dBi or more is 0.40 mm to 0.58 mm, and is 0.22λo to 0.32λo when converted to the dielectric wavelength of the dielectric substrate 3. In other words, it was actually confirmed that the dielectric substrate 3 can achieve higher gain when the thickness of the dielectric substrate is not less than 0.22 wavelengths and not more than 0.32 wavelengths.
FIG. 5 also shows that the gain is maximized when the substrate thickness is 0.5 mm (0.28 wavelength in terms of dielectric wavelength).

Example 4
In Example 4, the gain characteristic of the antenna device was measured when the parasitic element 5 was disposed above the feeding microstrip antenna 1 and the inner radius of the metal ring 2 was changed.
In Example 4, the antenna device 150 shown in the second embodiment described above was used. The arrangement relationship of the components other than the parasitic element 5 is the same as in the first embodiment. The parasitic element 5 has a side of 0.69 mm, and is shifted from the center of the feeding microstrip antenna 1 by 0.77 mm symmetrically with respect to the X axis and the Y axis. The dielectric layer 3a on which the parasitic element 5 is disposed on the upper surface has a layer thickness of 0.05 mm. That is, the parasitic element 5 is disposed 0.05 mm above the feeding microstrip antenna 1 and is disposed in the middle of the metal rings 2 disposed above and below.
Under these conditions, the gain characteristic of the antenna device 150 was measured by gradually changing the inner radius of the metal ring 2 of the lowermost layer 3a from 2.5 mm to 5 mm.

  The results of this example are shown in FIG. In FIG. 6, the horizontal axis is the inner radius (mm) of the metal ring 2 of the lowermost layer 3a, and the vertical axis is the gain characteristic (dBi). From the figure, it was confirmed that the parasitic element 5 was arranged to improve the gain around an inner radius of 3 mm (1.66 wavelength in terms of dielectric wavelength). Therefore, it has been confirmed that by providing the parasitic element 5, higher gain can be achieved when the metal ring 2 is downsized. That is, it was confirmed that the antenna device 150 can be further downsized while maintaining a high gain.

It is a figure which shows 1st Embodiment of the antenna device which concerns on this invention, Comprising: (a) is a top view, (b) is AA sectional drawing. It is a figure which shows 2nd Embodiment of the antenna device which concerns on this invention, Comprising: (a) is a top view, (b) is a cross-sectional arrow BB figure. It is a graph showing the result of Example 1 using the antenna apparatus which concerns on this invention. It is a graph showing the result of Example 2 using the antenna apparatus which concerns on this invention. It is a graph showing the result of Example 3 using the antenna apparatus which concerns on this invention. It is a graph showing the result of Example 4 using the antenna apparatus which concerns on this invention. It is a figure which shows the conventional antenna apparatus, Comprising: (a) is a top view, (b) is sectional drawing.

Explanation of symbols

100, 150 Antenna device 1 Feeding microstrip antenna (planar antenna)
2 Metal rings (metal rings)
3 Dielectric substrate 3a Dielectric layer 5 Parasitic element

Claims (5)

A multilayer dielectric substrate formed by stacking a plurality of dielectric layers;
A planar antenna for feeding that is arranged on the upper surface of the predetermined dielectric layer so as to be sandwiched between other dielectric layers;
The upper surface of the at least two layers of above the dielectric layer from the dielectric layer and the dielectric material layer in which the feeding planar antenna is disposed, surrounding the feeding planar antenna while overlapping each in a plan view A plurality of circular shapes formed so as to gradually expand from those arranged in the lower dielectric layer toward those arranged in the upper dielectric layer . A metal ring,
When viewed in plan on the upper surface of the dielectric layer above the dielectric layer on which the power feeding planar antenna is disposed, the power feeding planar antenna is arranged so as not to radiate and overlap the power feeding planar antenna. A plurality of parasitic elements arranged in
An antenna device comprising: The antenna device according to claim 1,
The dielectric substrate is formed of the dielectric layer made of a ceramic substrate;
An antenna device characterized by the above. In the antenna device according to claim 1 or 2,
The dielectric substrate is formed of the dielectric layer made of a high dielectric constant substrate having a relative dielectric constant of 5 or more;
An antenna device characterized by the above. In the antenna device according to any one of claims 1 to 3,
Although the metal ring is arranged in the lowermost dielectric layer, the radius of the inner circumference is 1.39 wavelengths or more and 2.77 wavelengths or less of the dielectric wavelength of the electromagnetic wave transmitted or received by the planar antenna for feeding. Being
An antenna device characterized by the above. In the antenna device according to any one of claims 1 to 4,
The dielectric substrate has a substrate thickness of 0.22 or more and 0.32 or less of the dielectric wavelength of the electromagnetic wave transmitted or received by the power feeding planar antenna;
An antenna device characterized by the above.

Images