JP4893045B2 - Thin film manufacturing method and thin film manufacturing apparatus - Google Patents

Description

  The present invention relates to a thin film manufacturing method and a thin film manufacturing apparatus, and more particularly to a thin film manufacturing method and a thin film manufacturing apparatus for controlling a film forming condition to form a thin film on a substrate.

  A thin film manufacturing apparatus used for manufacturing a semiconductor device or the like introduces a raw material gas into a film forming furnace in a gas phase and forms a thin film on a substrate by a chemical reaction. For example, a CVD (Chemical Vapor Deposition) apparatus is an apparatus that forms a predetermined thin film by controlling film formation conditions, such as source gas supply amount, film formation furnace pressure, film formation time, and film formation temperature.

  In the CVD apparatus, a difference may occur in the surface state of the substrate or the inner wall of the film forming furnace for each batch. In such a case, even if the film is formed under the same conditions as the previous film formation, the next film formation is not always the same as the previous film formation result. In order to obtain a desired film formation result in the next film formation, it is necessary to correct the next film formation condition based on the film formation result and the film formation condition in the previous film formation for each film forming process.

  However, during film formation, factors that affect the film formation result, such as re-release of the source gas adsorbed on the film formation furnace wall, change with each film formation process, so information based on the previous film formation result and processing conditions Therefore, the desired film formation result cannot be obtained in the next film formation, and the reproducibility of the film formation result cannot be obtained.

For such problems, a method has been proposed in which the source gas in the film forming furnace is analyzed in real time, and the film forming conditions such as the supply amount of the source gas are controlled in real time based on the analysis result (for example, patents). References 1 and 2). In addition, a method has been proposed in which a gas concentration distribution in a film forming furnace is modeled from the result of gas analysis, and film forming conditions are controlled accordingly (see, for example, Patent Document 3).
Japanese Patent No. 3077591 JP-A-11-233502 Japanese Patent Laid-Open No. 2003-77842

  However, in a batch type thin film manufacturing apparatus that forms thin films on a plurality of substrates at once in a CVD apparatus, the flow of source gas and the amount of source gas consumption that contributes to the formation of a thin film on the substrate (hereinafter simply referred to as source gas consumption amount). In order to stabilize the above, a dummy substrate is placed in the film forming furnace together with the product substrate, and a thin film is formed on the product substrate by matching the total number of substrates in the film forming furnace in the film forming process for each batch. There is a case. In this case, the film formation result of the product substrate varies depending on, for example, the ratio of the number of product substrates to the total number of substrates (hereinafter, product substrate occupation ratio). This is because the product substrate and the dummy substrate have different surface states such as the presence or absence of a circuit pattern and a difference in the surface layer before film formation, and when the product substrate occupancy varies, the raw material gas adsorption rate on one product substrate differs. Because.

  Therefore, even if the film formation conditions are controlled based on the above-described raw material gas analysis, when the dummy substrate is installed together with the product substrate in the batch type thin film manufacturing apparatus, if the product substrate occupancy changes for each batch, the film formation result There was a problem that the reproducibility of was not obtained.

  The present invention has been made in view of the above points, and provides a thin film manufacturing method and a thin film manufacturing apparatus capable of forming a thin film with high reproducibility even when the environment in a film forming furnace fluctuates. With the goal.

In the present invention, in order to solve the above problems, a step of performing a film forming process on a product substrate installed in a film forming furnace, a step of obtaining the conditions of the film forming process performed, and a product to be processed next Collecting the number of substrates and the number of dummy substrates installed in the film forming furnace together with the product substrate to be processed next, and calculating the product substrate occupation rate based on the collected number the film formation using the conditions of film formation process, a step of using the calculated product substrate occupancy corrected to produce a condition of the following film forming process, the generated condition of the next film forming process And a step of performing the next film forming process on the product substrate to be processed next installed in a furnace .

In the present invention, the acquisition means for acquiring the conditions of the film forming process performed on the product substrate installed in the film forming furnace, the number of product substrates to be processed next, and the product to be processed next The number of dummy substrates installed in the film formation furnace together with the substrate is collected, and the calculation means for calculating the product substrate occupancy based on the collected number of sheets, and the conditions for the acquired film forming process are calculated. There is provided a thin film manufacturing apparatus comprising: a generation unit that generates a condition for a next film forming process by correcting using a product substrate occupation ratio .

In the present invention, a thin film can be formed with good reproducibility even when the environment in the film forming furnace fluctuates.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
First, the first embodiment will be described.
First, the apparatus configuration of the first embodiment will be described.

FIG. 2 is a schematic view of a batch type thin film manufacturing apparatus according to the first embodiment.
This apparatus has a film forming furnace 100, a source gas supply mechanism 101, a source gas exhaust mechanism 102, and a controller 103. In the film forming furnace 100, a film forming furnace core tube 104 and a heater 105 are provided. A plurality of substrates 106, for example, a total of 150 product substrates 106a and dummy substrates 106b can be placed in a stack in the film forming furnace core tube 104.

  The source gas is introduced from the source gas supply mechanism 101 into the film forming core tube 104 through the source gas introduction pipe 107, and the unreacted source gas is exhausted to the source gas exhaust mechanism 102 through the source gas exhaust pipe 108.

From the source gas introduction pipe 107 and the source gas exhaust pipe 108, intake ports 110 and 111 are branched, respectively, and mass analyzers 112 and 113 are installed therein.
Further, when the information about the film formation result, the film formation condition, and the substrate 106 is collected, the controller 103 performs an operation based on the internal information, for example, the relational rule between the product substrate occupation rate and the film formation speed, to form the film. Correct the condition.

Here, a procedure for correcting the film forming conditions based on the relational rule between the product substrate occupation rate and the film forming speed will be described.
FIG. 3 is a relational rule between the product substrate occupation rate and the film formation rate. As shown in FIG. 3, the film formation rate decreases as the product substrate occupation ratio increases. This is because the adsorption rate of the raw material gas changes depending on the surface state difference between the product substrate 106a and the dummy substrate 106b, such as the presence / absence of a circuit pattern and the surface layer before film formation.

This relational rule is obtained in advance by performing an experiment or simulation, and is collected in the controller 103.
Based on these relational rules, the film formation rate in the next film formation is automatically calculated. For example, if the next product substrate occupancy is 75%, the next deposition rate is 94 a.u. (au; Arbitrary Unit) from FIG. Here, if the product substrate occupation ratio in the previous film formation is 25%, the previous film formation speed is 96 a.u. from FIG.

  That is, in order to form the same film thickness as the previous film formation in the next film formation, for example, the film formation time is multiplied by 96 a.u./94 a.u. (1.02) in the film formation conditions. The value becomes the next film formation time. Correction by such calculation is automatically performed in the controller 103.

Then, the thin film manufacturing method using the batch type thin film manufacturing apparatus which has the above structures is demonstrated.
FIG. 1 is an example of a flow of a thin film manufacturing method according to the first embodiment.

First, when the previous film formation is completed (step S1), the previous film formation result, film formation conditions, and raw material gas consumption are automatically collected by the controller 103 (step S2).
The previous film formation results are, for example, film thickness and film quality. Information about the film thickness and film quality is collected by the controller 103 as an electrical signal through the signal path 152.

  The previous film formation conditions are, for example, a film formation time, a film formation temperature, a film formation furnace pressure, and a raw material gas supply amount. The film formation time, film formation temperature, and film formation furnace pressure are automatically collected from the film formation furnace 100 through the signal path 150 as electrical signals by the controller 103. The source gas supply amount is automatically collected by the controller 103 as an electric signal from the source gas supply mechanism 101 through the signal path 160.

  As for the previous consumption of the raw material gas, for example, the measurement value at the mass analyzer 112 provided at the suction port 110 is automatically collected by the controller 103 as an electric signal through the signal path 170 and the mass analysis provided at the suction port 111 is performed. The measured value in the device 113 is automatically collected by the controller 103 as an electrical signal through the signal path 171. From these measured values, the component analysis of the source gas in the source gas introduction pipe 107 and the component analysis of the source gas in the source gas exhaust pipe 108 are performed, and the respective components are compared to automatically supply the source gas in the controller 103. Consumption is required.

  Next, the next film formation conditions are automatically collected by the controller 103 (step S3). The next film formation condition at this stage is set as the initial value of the next film formation condition. The initial value of the next film formation condition is automatically collected by the controller 103 as an electrical signal through the signal path 152. For example, in the next film formation, when forming a thin film twice as thick as the previous film formation, the film formation time, the film formation temperature, and the pressure in the film formation furnace will double the raw material gas consumption. The source gas supply amount becomes the initial value of the next film formation condition.

  Next, the substrate 106 on which a thin film is to be formed in the next film formation is automatically placed in the film formation furnace core tube 104 (step S4). At this stage, the product substrate 106a and the dummy substrate 106b are installed.

  Next, information about the substrate 106 installed in the deposition furnace core tube 104, for example, the number of product substrates 106a and dummy substrates 106b is automatically collected by the controller 103 as an electrical signal through the signal path 152 (step S5). The product substrate occupation ratio is automatically calculated in the controller 103.

  Next, the initial value of the next film formation condition is automatically corrected (step S6). In this correction, the initial value of the next film formation condition is automatically corrected in the controller 103 according to the relational rule (FIG. 3) between the product substrate occupation rate and the film formation speed collected in the controller 103 in advance. .

The product substrate 106a installed in the film forming furnace core tube 104 is automatically started to form a film based on the corrected next film forming condition (step S7).
For example, during the film formation conditions, the film formation temperature and the film formation time are output as electrical signals from the controller 103 to the film formation furnace 100 through the signal path 151, and the temperature and film formation time of the heater 105 are controlled. Further, the film forming furnace pressure is output as an electrical signal from the controller 103 through the signal paths 161 and 180 to the source gas supply mechanism 101 and the source gas exhaust mechanism 102 to control the film forming furnace pressure.

  The source gas supply amount is output from the controller 103 to the source gas supply mechanism 101 as an electrical signal through the signal path 161. Then, film formation is started under the corrected film formation conditions.

Then, the next film formation ends (step S8).
As described above, since the next film formation condition is controlled with high accuracy based on the relational rule between the product substrate occupancy and the film formation rate, even if the product substrate occupancy varies from batch to batch, the desired film formation result Even when the environment in the film forming furnace fluctuates, a thin film can be formed with good reproducibility.

Next, a second embodiment will be described.
In the second embodiment, when using the batch-type thin film manufacturing apparatus shown in FIG. 2 above, when film formation is performed under the film formation conditions corrected based on the relational rule between the product substrate occupation rate and the film formation speed, This is different from the first embodiment in that the film formation conditions are corrected at predetermined time intervals during film formation.

FIG. 4 is an example of a flow of the thin film manufacturing method according to the second embodiment.
Steps S20 to S26 shown in FIG. 4 have the same contents as steps S1 to S7 in FIG. 1, and detailed description thereof will be omitted. Here, it demonstrates from step S27.

  After the next film formation is started, the next film formation conditions and the raw material gas consumption are automatically collected by the controller 103 at predetermined time intervals (step S27). The film formation conditions are, for example, a film formation time, a film formation temperature, a film formation furnace pressure, and a source gas supply amount.

  Under these film forming conditions, the film forming time, the film forming temperature, and the pressure in the film forming furnace are automatically collected from the film forming furnace 100 through the signal path 150 to the controller 103 as electrical signals at predetermined time intervals. The source gas supply amount is automatically collected from the source gas supply mechanism 101 through the signal path 160 as an electrical signal by the controller 103 at predetermined time intervals.

  For example, the measured value of the mass gas analyzer 112 provided at the suction port 110 is automatically collected by the controller 103 as an electrical signal through the signal path 170 at predetermined time intervals, and is provided at the suction port 111. The measured values obtained by the mass analyzer 113 are automatically collected at predetermined time intervals by the controller 103 as electric signals through the signal path 171. From these measured values, the component analysis of the source gas in the source gas introduction pipe 107 and the component analysis of the source gas in the source gas exhaust pipe 108 are performed, and the respective components are compared, so that at a predetermined time interval in the controller 103. The raw material gas consumption is automatically determined.

  Then, in the controller 103, the next film forming condition is corrected at a predetermined time interval (step S28). For example, if the raw material gas consumption increases during the film formation, the raw material gas supply amount is reduced or the film formation time is corrected during the film formation conditions.

  In the corrected film formation conditions, the film formation temperature and film formation time are sequentially output from the controller 103 to the film formation furnace 100 as an electrical signal through the signal path 151, and the temperature and film formation time of the heater 105 are controlled. The The film forming furnace pressure is sequentially output from the controller 103 to the source gas supply mechanism 101 and the source gas exhaust mechanism 102 as electric signals through the signal paths 161 and 180, and the film forming furnace pressure is controlled.

The source gas supply amount is sequentially output from the controller 103 to the source gas supply mechanism 101 as an electrical signal through the signal path 161.
Then, the product substrate 106a installed in the deposition furnace core tube 104 is continuously deposited under the deposition conditions that are automatically and sequentially corrected at predetermined time intervals, and the next deposition is completed (step S29). .

  In this way, the next film formation condition is controlled with high accuracy by the relational rule between the product substrate occupancy and the film formation speed, and the film formation conditions are sequentially controlled with high accuracy at predetermined time intervals as the film formation starts. Even if the substrate occupancy rate fluctuates and the film formation speed fluctuates during film formation, the desired film formation result can be obtained, and even if the film forming furnace environment changes, a thin film can be formed with good reproducibility. can do. Note that if the predetermined time interval is shorter, the controllability of the film formation result is improved.

Next, a third embodiment will be described.
First, the apparatus configuration of the third embodiment will be described. FIG. 5 is a schematic view of a batch type thin film manufacturing apparatus according to the third embodiment.

  This apparatus includes a film forming furnace 300, a source gas supply mechanism 301, a source gas exhaust mechanism 302, and a controller 303. In the film forming furnace 300, a film forming furnace core tube 304 and heaters 305a, 305b, 305c, 305d, and 305e are provided. A plurality of substrates 306, for example, a total of 150 product substrates 306a and dummy substrates 306b can be installed in a stack in the deposition furnace tube 304.

  The source gas is introduced from the source gas supply mechanism 301 into the film forming furnace core tube 304 through the source gas introduction pipe 307, and the unreacted source gas is exhausted to the source gas exhaust mechanism 302 through the source gas exhaust pipe 308.

  A plurality of intake ports, for example, five intake ports 311 a, 311 b, 311 c, 311 d, and 311 e are installed side by side in the longitudinal direction of the film formation furnace core tube 304 on the side wall of the film formation furnace 300. Furthermore, mass analyzers 312a, 312b, 312c, 312d, and 312e are connected to the intake ports 311a, 311b, 311c, 311d, and 311e, respectively, and component analysis is performed at each location.

  Heaters 305a, 305b, 305c, 305d, and 305e are provided between the intake ports 311a, 311b, 311c, 311d, and 311e, and each heater 305a, 305b, 305c, 305d, and 305e is independently temperature controlled. Is done.

  In addition, when the information about the film formation result, the film formation condition, and the substrate 306 is collected, the controller 303 performs correction based on the information collected inside, for example, the distribution of the raw material gas consumption between the product substrates 306a, Control film forming conditions.

Then, the thin film manufacturing method using the batch type thin film manufacturing apparatus which has the above structures is demonstrated.
FIG. 6 is an example of the flow of the thin film manufacturing method according to the third embodiment.

First, when the previous film formation is completed (step S30), the previous film formation result, film formation conditions, and raw material gas consumption are automatically collected by the controller 303 (step S31).
The previous film formation results are, for example, film thickness and film quality. Information on the film thickness and film quality is automatically collected by the controller 303 as an electrical signal through the signal path 352.

  The previous film formation conditions are, for example, a film formation time, a film formation temperature, a film formation furnace pressure, and a raw material gas supply amount. The deposition time, deposition temperature, and deposition furnace pressure are automatically collected by the controller 303 as electrical signals from the deposition furnace 300 through the signal path 350. The source gas supply amount is automatically collected by the controller 303 as an electrical signal from the source gas supply mechanism 301 through the signal path 360.

  Next, the next film formation conditions are automatically collected by the controller 303 (step S32). The next film formation condition at this stage is set as an initial value in the next film formation condition. The initial value of the next film formation condition is automatically collected by the controller 303 as an electrical signal through the signal path 352.

Next, the substrate 306 on which a thin film is to be formed in the next film formation is automatically installed in the film formation core tube 304 (step S33).
Next, information on the substrate 306 installed in the deposition furnace core tube 304, for example, information on the positions of the product substrate 306a and the dummy substrate 306b is automatically collected by the controller 303 as an electrical signal through the signal path 352 (step S34). The product substrate occupation ratio is automatically calculated in the controller 303.

  Next, the initial value of the next film formation condition is automatically corrected (step S35). In this correction, the initial value of the next film formation condition is automatically corrected in the controller 303 according to the relational rule (FIG. 3) between the product substrate occupation rate and the film formation speed collected in the controller 303 in advance. .

The product substrate 306a installed in the film forming furnace core tube 304 is automatically started to form a film based on the corrected next film forming condition (step S36).
During the film formation conditions, the film formation temperature and the film formation time are output as electric signals from the controller 303 to the film formation furnace 300 through the signal path 351, and the temperatures and film formation times of the heaters 305a, 305b, 305c, 305d, and 305e are output. Be controlled. Further, the pressure in the deposition furnace and the supply amount of the source gas are output as electric signals from the controller 303 through the signal paths 361 and 380 to the source gas supply mechanism 301 and the source gas exhaust mechanism 302 to control the pressure in the deposition furnace. The

The source gas supply amount is output from the controller 303 to the source gas supply mechanism 301 as an electrical signal through the signal path 361.
Next, the next film formation condition is automatically corrected (step S37).

This correction means that the next film formation condition corrected in step S35 is further corrected based on the raw material gas consumption distribution between the product substrates 306a in the next film formation.
For example, when the next film formation is started, the measured value of the mass analyzer 312a is the signal path 370, the measured value of the mass analyzer 312b is the signal path 370, the measured value of the mass analyzer 312c is the signal path 370, and mass spectrometry is performed. The measured value of the analyzer 312d is automatically collected by the controller 303 as an electric signal through the signal path 370 and the measured value of the mass analyzer 312e through the signal path 370, and component analysis of the raw material gas at each location is performed. Source gas consumption distribution between the substrates 306a is automatically calculated.

  After the source gas consumption distribution between the product substrates 306a is automatically calculated, for example, only the source gas consumption in the film forming furnace core tube 304 near the inlet 311c is relative to the source consumption in other places. If the temperature is low, the correction for increasing the uniformity of the raw material gas consumption between the product substrates 306a in the film forming furnace core tube 304 by increasing the temperature of the heater 305c during the next film forming condition is performed in the controller 303. Is done automatically.

  In the corrected film formation conditions, the film formation temperature and the film formation time are output as electric signals from the controller 303 to the film formation furnace 300 through the signal path 351, and the temperatures of the heaters 305a, 305b, 305c, 305d, and 305e are output. The film formation time is controlled. At this time, for example, the temperatures of the heaters 305a, 305b, 305c, 305d, and 305e are independently controlled. Further, the film forming furnace pressure is output as an electrical signal from the controller 303 through the signal paths 361 and 380 to the source gas supply mechanism 301 and the source gas exhaust mechanism 302 to control the film forming furnace pressure.

The source gas supply amount is output from the controller 303 to the source gas supply mechanism 301 as an electrical signal through the signal path 361.
The product substrate 306a installed in the deposition furnace core tube 304 is continuously deposited using the corrected deposition conditions, and the next deposition is completed (step S38).

  As described above, since the next film formation condition is controlled with high accuracy based on the distribution of the raw material gas consumption between the product substrates 306a, even if the distribution of the raw material gas consumption between the product substrates 306a occurs, the desired formation can be achieved. Film results can be obtained, and a thin film can be formed with good reproducibility even when the film forming furnace environment changes.

  Further, in the third embodiment, by performing correction performed at predetermined time intervals after the start of film formation shown in FIG. 4, the film formation conditions can be controlled with higher accuracy and the reproducibility of the film formation results. Can be further improved.

Next, a fourth embodiment will be described.
First, the apparatus configuration of the fourth embodiment will be described. FIG. 7 is a schematic view of a batch type thin film manufacturing apparatus according to the fourth embodiment.

  This apparatus has a film forming furnace 400, a source gas supply mechanism 401, a source gas exhaust mechanism 402, and a controller 403. In the film forming furnace 400, a film forming furnace core tube 404 and a heater 405 are provided. A plurality of substrates 406, for example, a total of 150 product substrates 406a and dummy substrates 406b can be installed in a stack in the deposition furnace tube 404.

  The source gas is introduced from the source gas supply mechanism 401 through the source gas introduction pipe 407 into the film forming furnace core tube 404, and the unreacted source gas is exhausted through the source gas exhaust pipe 408 to the source gas exhaust mechanism 402.

As shown in FIG. 7, a plurality of mass analyzers 412, 413 are installed side by side in the longitudinal direction of the film forming furnace core tube 404 on the side wall of the film forming furnace 400.
Furthermore, in this embodiment, a plurality of mass analyzers are installed around the deposition furnace core tube 404.

FIG. 8 is a schematic view of the film forming furnace of the fourth embodiment viewed from the vertical direction.
From FIG. 8, a plurality of inlets, for example, four inlets 420 a, 420 b, 420 c, 420 d are installed around the deposition furnace core tube 404. Mass analyzers 422a, 422b, 422c, and 422d are connected to the respective intake ports 420a, 420b, 420c, and 420d, and component analysis is performed at each location.

  Heaters 421a, 421b, 421c, and 421d are provided between the intake ports 420a, 420b, 420c, and 420d, and the temperatures of the heaters 421a, 421b, 421c, and 421d are independently controlled.

  Further, when the information about the film formation result, the film formation condition, and the substrate 406 is collected, the controller 403 performs correction based on the information collected inside, for example, the distribution of the raw material gas consumption in the surface of the product substrate 406a, Control film forming conditions.

Then, the thin film manufacturing method using the batch type thin film manufacturing apparatus which has the above structures is demonstrated.
FIG. 9 is an example of the flow of the thin film manufacturing method according to the fourth embodiment. This flow will be described with reference to FIGS.

  Note that steps S40 to S46 of the flow shown in FIG. 9 are the same as steps S30 to S36 shown in FIG. Here, it demonstrates from step S47. Further, the operation of the signal paths 450, 460, and 452 shown in FIG. 7 is the same as that of the signal paths 350, 360, and 352 shown in FIG.

After the next film formation is started, the next film formation condition is automatically corrected (step S47).
This correction means that the next film forming condition corrected in step S45 is further corrected based on the raw material gas consumption distribution in the surface of the product substrate 406a.

  For example, when the next film formation is started, the mass gas analyzers 422a, 422b, 422c, and 422d shown in FIG. 8 measure the raw material gas consumption distribution in the surface of the product substrate 406a. That is, the measurement value of the mass analyzer 422a is transmitted through the signal path 470, the measurement value of the mass analyzer 422b is transmitted through the signal path 471, the measurement value of the mass analyzer 422c is transmitted through the signal path 472, and the measurement value of the mass analyzer 422d is transmitted through the signal path 473. It is automatically collected by the controller 403 as an electrical signal, and by performing component analysis of the raw material gas at each location, the raw material gas consumption distribution in the surface of the product substrate 406a is automatically calculated.

  After the source gas consumption distribution in the surface of the product substrate 406a is automatically calculated, for example, only the source gas consumption in the deposition furnace core tube 404 near the inlet 420c is compared with the source consumption in other places. When the temperature is relatively low, for example, the temperature of the heaters 421c and 421d is increased during the next film formation condition so that the uniformity of the raw material gas consumption in the surface of the product substrate 406a in the film formation core tube 404 is improved. Correction is automatically performed in the controller 403.

  In the corrected film formation conditions, the film formation temperature and the film formation time are output as electric signals from the controller 403 shown in FIG. 7 to the film formation furnace 400 through the signal path 451, and the temperature and film formation time of the heater 405 are output. Is controlled. At this time, the temperatures of the heaters 421a, 421b, 421c, and 421d shown in FIG. 8 are controlled independently. Further, the film forming furnace pressure is output as an electrical signal from the controller 403 shown in FIG. 7 through the signal paths 461 and 480 to the source gas supply mechanism 401 and the source gas exhaust mechanism 402 to control the film forming furnace pressure. .

The source gas supply amount is output from the controller 403 to the source gas supply mechanism 401 as an electrical signal through the signal path 461.
The product substrate 406a installed in the deposition furnace core tube 404 is continuously deposited under the corrected deposition conditions, and the next deposition is completed (step S48).

  As described above, since the next film formation condition is controlled with high accuracy based on the distribution of the raw material gas consumption in the surface of the product substrate 406a, even if the distribution of the raw material gas consumption occurs in the surface of the product substrate 406a, a desired value is obtained. The film formation result can be obtained, and the thin film can be formed with good reproducibility even when the environment in the film forming furnace fluctuates.

  Further, in the fourth embodiment, by performing correction performed at predetermined time intervals after the start of film formation shown in FIG. 4, the film formation conditions can be controlled with higher accuracy, and the film formation results can be reproduced more accurately. Can be improved. Furthermore, by performing correction based on the distribution of the raw material gas consumption between the product substrates shown in FIG. 6, the film formation conditions can be controlled with higher accuracy, and the reproducibility of the film formation results can be improved.

  Moreover, in the said embodiment, the uniformity of the raw material gas consumption in the product board | substrate 406a surface is improved by controlling the temperature of the heaters 421c and 421d. The means for improving the uniformity of the raw material gas consumption in the surface of the product substrate 406a is not particularly limited to this method. For example, the center axis of the product substrate 406a or the center axis of the heaters 421a, 421b, 421c, and 421d is set to be the center axis of the film forming furnace core tube 404 so that the uniformity of the raw material gas consumption in the surface of the product substrate 406a is improved. , May be eccentric.

  3 in the above description depends on the film quality or the film forming method. In this case, contrary to the result of FIG. 3, the film formation rate may increase as the product substrate occupation ratio increases. Such information may also be collected by the controller.

  In addition, when the film formation speed varies depending on other factors such as the type of thin film, the position of the product substrate in the film forming furnace, the film forming method, the thin film manufacturing apparatus, etc., the type of thin film, the position of the product substrate in the film forming furnace, A film forming method and a film forming speed for each thin film manufacturing apparatus may be sequentially subjected to experiments or simulations, and these pieces of information may be collected by a controller.

(Additional remark 1) The process of performing the film-forming process with respect to a product substrate,
Acquiring the conditions of the film forming process performed;
Correcting the acquired film forming process condition using the number of product substrates to be processed next to generate the next film forming process condition;
Performing the next film forming process on the product substrate to be processed next using the generated conditions of the next film forming process;
A thin film manufacturing method characterized by comprising:

(Supplementary Note 2) In the step of performing the film forming process on the product substrate,
The thin film manufacturing method according to claim 1, wherein the film forming process is performed on a dummy substrate together with the product substrate.

(Supplementary Note 3) In the step of performing the next film forming process on the product substrate to be processed next using the generated conditions of the next film forming process,
The thin film manufacturing method according to claim 1, wherein the next film forming process is performed on the product substrate to be processed next while correcting the generated conditions of the next film forming process.

(Supplementary Note 4) When performing the next film formation process on the product substrate to be processed next while correcting the generated conditions of the next film formation process,
The thin film manufacturing method according to appendix 3, wherein the next film forming process is performed on the product substrate to be processed next while correcting the conditions of the next film forming process at regular time intervals.

(Supplementary Note 5) When performing the next film forming process on the product substrate to be processed next while correcting the generated conditions of the next film forming process,
While correcting the generated conditions of the next film formation process using the distribution of the raw material gas consumption between the product substrates to be processed next, the next film formation is performed on the product substrate to be processed next. The method of manufacturing a thin film according to supplementary note 3, wherein the treatment is performed.

(Supplementary Note 6) When performing the next film forming process on the product substrate to be processed next while correcting the generated conditions of the next film forming process,
While correcting the generated conditions of the next film forming process using the distribution of the raw material gas consumption in the surface of the product substrate to be processed next, the next process substrate is processed. 4. The method of manufacturing a thin film according to appendix 3, wherein film processing is performed.

(Supplementary Note 7) In the step of performing the next film forming process on the product substrate to be processed next using the generated conditions of the next film forming process,
Additional temperature control using an independent temperature control using a heater divided in the same direction with respect to the film formation furnace central axis, or the center axis of the product substrate is decentered with respect to the film formation furnace central axis Thin film manufacturing method.

(Supplementary Note 8) Acquisition means for acquiring the conditions of the film forming process performed on the product substrate;
Generating means for correcting the acquired film forming process condition using the number of product substrates to be processed next to generate a condition for the next film forming process;
A thin film manufacturing apparatus comprising:

(Supplementary Note 9) The generation means includes:
When the product substrate to be processed next is processed together with the dummy substrate in the next film forming process,
The conditions of the next film forming process are corrected by correcting the number of the product substrates to be processed next with respect to the total number of substrates of the product substrates to be processed next and the dummy substrates. The thin film manufacturing apparatus according to appendix 8, wherein

  (Additional remark 10) Additional correction | amendment means which correct | amends the conditions of the said next film-forming process between the said next film-forming processes performed using the conditions produced | generated by the said production | generation means Thin film manufacturing equipment.

  (Additional remark 11) The said correction | amendment means correct | amends the conditions of the said next film-forming process by a fixed time interval during the said next film-forming process performed using the conditions produced | generated by the said production | generation means. The thin film manufacturing apparatus according to appendix 10.

  (Additional remark 12) The said correction | amendment means is between the product substrates which process the said next film-forming process during the said next film-forming process performed using the conditions produced | generated by the said production | generation means between the said next board | substrate processes. The thin film manufacturing apparatus according to appendix 10, wherein the correction is performed using the distribution of the raw material gas consumption.

  (Additional remark 13) The said correction | amendment means is a product board | substrate surface which processes the conditions of the said next film-forming process during the said next film-forming process performed using the conditions produced | generated by the said production | generation means next The thin film manufacturing apparatus according to appendix 10, wherein the correction is made using the distribution of the raw material gas consumption.

It is an example of the flow of the thin film manufacturing method of 1st Embodiment. It is a batch type thin film manufacturing apparatus schematic diagram of a 1st embodiment. This is the relational law between product substrate occupancy and film formation rate. It is an example of the flow of the thin film manufacturing method of 2nd Embodiment. It is the batch type thin film manufacturing apparatus schematic of 3rd Embodiment. It is an example of the flow of the thin film manufacturing method of 3rd Embodiment. It is the batch type thin film manufacturing apparatus schematic of 4th Embodiment. It is the schematic which looked at the film-forming furnace of 4th Embodiment from the perpendicular direction. It is an example of the flow of the thin film manufacturing method of 4th Embodiment.

Explanation of symbols

100, 300, 400 Deposition furnace 101, 301, 401 Source gas supply mechanism 102, 302, 402 Source gas exhaust mechanism 103, 303, 403 Controller 104, 304, 404 Deposition furnace core tube 105, 305a, 305b, 305c, 305d , 305e, 405, 421a, 421b, 421c, 421d Heater 106, 306, 406 Substrate 106a, 306a, 406a Product substrate 106b, 306b, 406b Dummy substrate 107, 307, 407 Source gas introduction pipe 108, 308, 408 Source gas exhaust Pipes 110, 111, 310, 311a, 311b, 311c, 311d, 311e, 420a, 420b, 420c, 420d Inlet 112, 113, 312a, 312b, 312c, 312d, 312e, 412, 4 3, 422a, 422b, 422c, 422d Mass analyzer 150, 151, 152, 160, 161, 170, 171, 180, 350, 351, 352, 360, 361, 370, 380, 450, 451, 452, 460, 461, 470, 471, 472, 473, 480 Signal path

Claims (5)

A process of performing a film forming process on a product substrate installed in a film forming furnace ;
Acquiring the conditions of the film forming process performed;
The step of collecting the number of product substrates to be processed next and the number of dummy substrates installed in the film forming furnace together with the product substrate to be processed next, and calculating the product substrate occupation rate based on the collected number of substrates When,
Correcting the acquired film forming process conditions using the calculated product substrate occupancy and generating the next film forming process conditions;
Performing the next film forming process on the product substrate to be processed next installed in the film forming furnace using the generated conditions of the next film forming process;
A thin film manufacturing method characterized by comprising: In the step of performing the next film forming process on the product substrate to be processed next using the generated conditions of the next film forming process,
2. The thin film manufacturing method according to claim 1, wherein the next film forming process is performed on the product substrate to be processed next while correcting the generated film forming process condition. In the step of performing the next film forming process on the product substrate to be processed next using the generated conditions of the next film forming process,
2. The independent temperature control using a heater divided in the same direction with respect to the film forming furnace central axis, or the center axis of the product substrate is decentered with respect to the film forming furnace central axis. Thin film manufacturing method. An acquisition means for acquiring the conditions of the film forming process performed on the product substrate installed in the film forming furnace ;
A calculation for collecting the number of product substrates to be processed next and the number of dummy substrates installed in the film forming furnace together with the product substrate to be processed next, and calculating the product substrate occupation rate based on the collected number Means,
Generating means for correcting the acquired film forming process condition using the calculated product substrate occupancy to generate the next film forming process condition;
A thin film manufacturing apparatus comprising:   5. The thin film manufacturing method according to claim 4, further comprising a correcting unit that corrects the conditions of the next film forming process during the next film forming process performed using the conditions generated by the generating unit. apparatus.

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