JP4895680B2 - Field emission type image display device and non-evaporable getter - Google Patents

Description

  The present invention relates to a field emission image display device and a non-evaporable getter, and more particularly to an image display device which is a flat electron emission display and a non-evaporable getter including a photocatalyst layer.

In Japanese Patent Laid-Open No. 2002-83537 (Patent Document 1), a photocatalytic material is formed on an electron emission portion forming thin film, an electron emission portion is formed by a forming process, and then light irradiation is performed in the presence of oxygen gas. A method of manufacturing a surface conduction electron-emitting device by performing an activation process of depositing a carbon film on the electron-emitting portion is disclosed.
Japanese Patent Laid-Open No. 2002-83537

  In a device that emits electrons into a vacuum space, it is necessary to suppress a decrease in the degree of vacuum due to a gas released into the vacuum. For this reason, a getter that adsorbs gas is installed in the space. A high vacuum state is maintained by adsorbing moisture or carbon dioxide gas by the getter.

  However, conventional getter materials may not be able to sufficiently adsorb gas containing organic compounds and polymer compounds. These compounds can be decomposed into gases that can be adsorbed by the getter material, for example, by irradiating the photocatalyst with ultraviolet rays.

  In Patent Document 1, a photocatalytic material is formed on an electron emission portion forming thin film in a surface conduction electron-emitting device. However, as described in Patent Document 1, when a gas containing an organic compound or a polymer compound is generated simply by providing a photocatalyst in a vacuum space, these compounds can be effectively decomposed. As a result, a high vacuum state may not be sufficiently ensured.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a field emission image display apparatus capable of stably maintaining a high vacuum state in an electron emission region and the display. An object of the present invention is to provide a non-evaporable getter applicable to an apparatus.

  A field emission image display device according to the present invention is a field emission image display device that emits electrons into a vacuum space and causes the electrons to collide with a phosphor to emit light. First and second substrates provided on the substrate, an electron emission source provided on the first substrate, a phosphor provided on the second substrate, and a vacuum space formed between the first and second substrates And a photocatalyst provided in a vacuum space and capable of decomposing an organic compound or a polymer compound when irradiated with a light beam including ultraviolet rays.

  In one aspect, the photocatalyst is provided on the outer periphery of the region where the electron emission source is provided on a plane parallel to the main surfaces of the first and second substrates.

  In another aspect, ultraviolet rays are emitted when electrons collide with a phosphor provided on the second substrate, and the photocatalyst is provided on the second substrate.

  The non-evaporable getter according to the present invention includes a getter material that adsorbs a gas, and a photocatalyst that is formed on the surface of the getter material and that can decompose an organic compound or a polymer compound when irradiated with light including ultraviolet rays. And a layer.

  According to the present invention, a high vacuum state of an electron emission region can be stably maintained in a flat electron emission display.

  Embodiments of the present invention will be described below. Note that the same or corresponding portions are denoted by the same reference numerals, and the description thereof may not be repeated.

  Note that in the embodiments described below, when referring to the number, amount, and the like, the scope of the present invention is not necessarily limited to the number, amount, and the like unless otherwise specified. In the following embodiments, each component is not necessarily essential for the present invention unless otherwise specified. In addition, when there are a plurality of embodiments below, it is planned from the beginning to appropriately combine the features of each embodiment unless otherwise specified.

(Embodiment 1)
FIG. 1 is a cross-sectional view showing a field emission type image display apparatus according to Embodiment 1 of the present invention. Referring to FIG. 1, the field emission image display device according to the present embodiment includes a cathode substrate 110, an anode substrate 120, an electron emission source 200, a shield electrode 300, an anode electrode 400, and a phosphor 500. It is comprised including. The electron emission source 200 includes a cathode electrode layer 210 and a carbon nanotube layer 220. A vacuum space is formed between the cathode substrate 110 and the anode substrate 120, and electrons are emitted from the electron emission source 200 in the vacuum space. When the electrons emitted from the electron emission source 200 collide with the phosphor 500, the phosphor 500 emits light. Thereby, image display is performed.

  In the field emission type image display device, as described above, the electron emission source 200 and the phosphor 500 are held in the same vacuum container. Here, when the electrons emitted from the electron emission source 200 strike the phosphor 500 and a gas or the like is secondarily emitted, the degree of vacuum in the container decreases. When the degree of vacuum decreases, the stability and life of the image display element may be impaired. Therefore, it is important to realize as high a vacuum state as possible when manufacturing the field emission image display device.

  In the cathode ray tube in which a vacuum space is formed as in the above device, the internal space is wide, so even if gas is released into the internal space, the local vacuum degree on the cathode surface is unlikely to decrease. On the other hand, when a flat field emission display (FED) is formed, the space between the electron emission source 200 and the phosphor 500 is narrow, so that the internal space is narrow and a local vacuum on the cathode surface is formed. Degradation is likely to occur significantly. If field emission of electrons is performed when this local reduction in vacuum occurs, local deterioration of the cathode may occur.

  In order to ensure a high vacuum state, it is common practice to perform baking at as high a temperature as possible during evacuation to reduce residual gas components as much as possible before sealing. However, when carbon nanotubes are used as the electron emission source, the carbon nanotubes are likely to burn at high temperatures, so that it is difficult to exhaust at high temperatures. Therefore, when carbon nanotubes are used as the electron emission source, polymer gas or carbon-derived gas tends to remain.

  In order to adsorb gas generated in the vacuum space and maintain a high vacuum state, a getter is installed in the space. As a general getter, a porous body of an alloy of metal zirconium and metal vanadium, which is called a barium getter that performs adsorption mainly using a reaction between a metal barium vapor-deposited film and oxygen, water, carbon dioxide gas, etc. And an alloy type getter that performs adsorption by utilizing the reaction between the porous body and oxygen, water, and carbon dioxide gas. The former is also called an evaporation type getter because the getter material is evaporated when the getter is operated. On the other hand, the latter does not need to evaporate the getter material, and when the getter is activated, it is called a non-evaporable getter because the getter material is activated by removing a protective film such as a surface oxide film by heating. .

  The flat display has a feature that the area of the electron emission source 200 is wide because the electron emission source 200 is formed for each pixel of the phosphor 500. Such an electron emission source 200 is usually formed by a thin film forming method such as sputtering or vapor deposition, or a thick film forming method such as a printing method.

  The film formed by the above thick film printing or the like contains an organic compound or a polymer compound before firing. Most of these compounds are removed in the firing process at the time of panel preparation, but if a small amount of the remaining compound is released into the internal space, there is a possibility that the degree of vacuum may be adversely affected. Therefore, when the above organic compounds or polymer compounds remain in the internal space, it is necessary to remove them.

  The above-described evaporative / non-evaporable getters all have high adsorption efficiency for gas molecules such as water, oxygen, and carbon dioxide. However, an organic gas such as methane or a polymer gas derived from printing ink tends to be hardly adsorbed (or hardly adsorbed) by a general getter material.

  In the field emission image display device according to the present embodiment, a photocatalyst made of, for example, titanium oxide is provided in a vacuum space (internal space), and the photocatalyst is irradiated with ultraviolet rays, so that the organic gas and the high Molecular gas is decomposed into carbon monoxide, carbon dioxide, water and the like that can be adsorbed by a general getter, and these are adsorbed by the getter. Thereby, a high vacuum state can be stably maintained over a long period of time.

  FIG. 2 is a view for explaining an installation area of the photocatalyst in the present embodiment. With reference to FIG. 2, a display region 111 in which electron emission sources 200 are arranged and a photocatalytic region 112 provided on the outer periphery of display region 111 are formed on the main surface of cathode substrate 110. The photocatalyst is provided in the photocatalyst region 112. That is, in the present embodiment, the photocatalyst is provided on the outer periphery of the display region 111 on the main surface of the cathode substrate 110.

  Getters provided in the vacuum space are provided on the outer periphery of the display area 111. Therefore, as shown in FIG. 2, by providing the photocatalyst region 112 on the outer periphery of the display region 111, the region where the getter is provided and the photocatalyst region 112 can overlap, so that the photocatalyst and the getter can be brought close to each other. it can. As a result, the gas component decomposed by the photocatalyst can be immediately adsorbed to the getter.

  The photocatalyst is formed by the following procedure, for example. First, the electrode lead-out portion in the outer periphery of the display area 111 and close to the display area 111 is covered with an insulating layer. The step of forming the insulating layer is performed simultaneously with the step of forming the insulating layer in the display region 111. On the insulating layer outside the display region 111, a liquid for forming a photocatalyst (for example, a liquid capable of forming titanium oxide by a sol-gel method) is supplied. The liquid is supplied by a method such as printing, spraying, spin coating or coating. Thereafter, titanium oxide as a photocatalyst is formed by firing. Note that the liquid may be formed by a CVD method or a sputtering method.

  When the device is evacuated, ultraviolet rays are irradiated from the outside of the panel during the evacuation time with baking. The wavelength of the ultraviolet rays in this case may be a wavelength that passes through the panel glass (for example, about 365 nm), but it is more preferable if light with a shorter wavelength can be irradiated. As described above, when the photocatalyst is activated by irradiating the photocatalyst with ultraviolet rays, and the organic gas or polymer gas is adsorbed on the surface of the photocatalyst, the gas is decomposed into lower molecular weight gas molecules. For example, carbon monoxide, carbon dioxide, and water. Since these components are components that are easily adsorbed by the getter, the inside of the panel is kept in a high vacuum state.

  As the gas that can be released into the vacuum space in the panel is considered to be generated most during the exhaust time, the photocatalyst is activated during the exhaust time as described above. As a result, most of the gas that may be released into the vacuum space is decomposed and adsorbed by the getter.

  When the polymer gas is generated in the vacuum space after sealing the panel, the polymer gas is decomposed by irradiating an ultraviolet lamp or LED light with a wavelength of about 365 nm called black light from the outside, and the getter is Adsorbed. As a result, a high vacuum state in the vacuum space is achieved.

  The above contents are summarized as follows. That is, the field emission image display device according to the present embodiment includes a cathode substrate 110 as a “first substrate”, an anode substrate 120 as a “second substrate”, and a cathode substrate 110 provided so as to face each other. An electron emission source 200 provided above, a phosphor 500 provided on the anode substrate 120, and a non-evaporable getter that adsorbs a gas in a vacuum space formed between the cathode substrate 110 and the anode substrate 120. 600 and a photocatalyst provided in a vacuum space and capable of decomposing an organic compound or a polymer compound when irradiated with light including ultraviolet rays. The photocatalyst is provided in the photocatalyst region 112 located on the outer periphery of the display region 111 where the electron emission sources 200 are arranged on a plane parallel to the main surfaces of the cathode substrate 110 and the anode substrate 120.

  According to the present embodiment, by providing the photocatalyst and the getter close to each other, the decomposed gas component can be immediately adsorbed to the getter after decomposing the organic compound and the polymer compound. The high vacuum state of the region can be stably maintained.

(Embodiment 2)
FIG. 3 is a cross-sectional view showing a non-evaporable getter provided in the field emission image display apparatus according to Embodiment 2 of the present invention. The field emission image display device according to the present embodiment is a modification of the field emission image display device according to the first embodiment. As shown in FIG. 3, the photocatalyst layer 630 includes a non-evaporable getter 600. It is provided integrally. In the example of FIG. 3, the non-evaporable getter 600 includes a nickel-chrome substrate 610 as a “heater substrate”, a getter layer 620 that adsorbs gas, and a photocatalyst layer 630 formed on the surface of the getter layer 620. Consists of.

  The non-evaporable getter 600 shown in FIG. 3 is formed by the following procedure. First, powder of non-evaporable getter metal (getter material) made of metal zirconium, metal vanadium, or the like is supplied onto a nickel-chromium substrate (nichrome substrate) 610 as a “heater substrate” that performs getter activation. The powder is mixed with an organic binder, resin, or the like and supplied onto the substrate by, for example, a printing method. The getter material supplied onto the substrate by the printing method is baked at a temperature of 1000 ° C. or higher in an inert atmosphere or a reducing atmosphere. Thereby, the porous getter layer 620 is formed.

  Thereafter, a photocatalytic layer 630 is formed on the getter layer 620. Here, first, a liquid capable of forming titanium oxide by a sol-gel method or the like is formed by a method such as printing, spraying, spin coating, or coating, and titanium oxide that is a photocatalyst is formed by firing. Note that the liquid may be formed by a CVD method or a sputtering method.

  Also in the present embodiment, evacuation is performed while activating the photocatalyst in the same procedure as in the first embodiment. Here, the gas adsorbed by the non-evaporable getter 600 is also released out of the vacuum device by baking performed during the exhaust time.

  In the present embodiment, as described above, the photocatalytic layer 630 is formed on the surface of the non-evaporable getter 600. The non-evaporable getter 600 is provided on the outer periphery of the display area. Therefore, the photocatalyst layer 630 provided on the surface of the non-evaporable getter 600 is also provided on the outer periphery of the display area, as in the first embodiment.

  According to the field emission image display device according to the present embodiment, by providing the photocatalyst layer 630 on the surface of the non-evaporable getter 600, the organic compound and the polymer compound are decomposed into gases that can be adsorbed by the getter layer 620. In addition, since the gas component decomposed by the photocatalyst layer 630 can be immediately adsorbed to the getter layer 620, the high vacuum state of the electron emission region can be stably maintained.

(Embodiment 3)
FIG. 4 is a diagram for explaining the installation area of the photocatalyst in the field emission image display device according to the third embodiment. The field emission image display device according to the present embodiment is a modification of the field emission image display device according to Embodiments 1 and 2, and the photocatalytic layer 630 is on the anode substrate 120 as shown in FIG. It is provided in. In the example of FIG. 4, the photocatalytic layer 630 is provided on the surface of the black matrix B (the inner surface of the anode substrate 120) located between the phosphors 500. Further, in the example of FIG. 4, a phosphor that emits near-ultraviolet light by electron beam excitation is mixed in the phosphor 500 or applied on the surface of the black matrix B. By doing so, the “ultraviolet radiation part” that emits near ultraviolet rays by electron beam excitation and the photocatalyst layer 630 are brought close to each other, and near ultraviolet rays are simultaneously emitted during the display operation, and the photocatalyst is activated. A gas, a polymer gas, or the like can be decomposed into a gas that can be adsorbed by the getter.

Examples of phosphors that emit near-ultraviolet rays with an electron beam include BaSi ₂ O ₅ : Pb ²⁺ , SrB ₄ O ₇ F: Eu ²⁺ , (Ba, Sr, Mg) ₂ Si ₂ O ₇ : Pb ^2+. , YF ₃ : Gd, Pr and the like are known. Near ultraviolet rays are emitted from these materials during display operation, and the near ultraviolet rays strike the photocatalyst layer 630, whereby the surface of the photocatalyst layer 630 is activated, and organic component gas or polymer gas is converted to carbon dioxide gas or carbon monoxide gas. And is absorbed by the getter. As a result, the inside of the panel is kept in a higher vacuum state.

  According to the field emission image display apparatus according to the present embodiment, the phosphor 500 that emits near ultraviolet rays by electron beam excitation is provided, and the photocatalyst layer 630 is provided on the anode substrate 120, so that the photocatalyst layer is displayed during display operation. Since the organic compound and the polymer compound can be decomposed into gases that can be adsorbed by the getter by activating 630, the high vacuum state of the electron emission region can be stably maintained.

(About the manufacturing process of the electron emission source 200)
A manufacturing process of the electron emission source 200 provided on the cathode substrate 110 will be described with reference to FIGS.

<Step 1: Formation of cathode electrode layer 210 (see FIG. 5)>
First, the cathode electrode layer 210 is formed on the cathode substrate 110 by using a sputtering method. The cathode electrode layer 210 is made of, for example, an ITO film that is a transparent conductive film. The thickness of the ITO film is, for example, 0.3 μm.

  Thereafter, the cathode electrode layer 210 is processed into a line shape by using a photolithography method or the like. Note that the above-described photolithography method means a photoengraving technique in which a pattern is transferred to a flat substrate using light or an electron beam in the semiconductor manufacturing technique. In this step, various steps such as application, exposure, etching, and removal of the resist film are performed. Since these steps are general, detailed description thereof is omitted.

<Step 2: Formation of carbon nanotube layer 220 (see FIG. 6)>
Next, the carbon nanotube layer 220 is formed on the cathode electrode layer 210. At that time, the carbon nanotube layer 220 is not formed so as to cover the entire upper surface of the cathode electrode layer 210, but a region located immediately below the electron emission openings 230A and 300A formed in a later step on the upper surface. The carbon nanotube layer 220 is formed only on the top and the peripheral region.

  More specifically, the carbon nanotube layer 220 is applied onto the cathode electrode layer 210 by screen printing using a paste containing carbon nanotube powder. At this time, the average particle diameter of the carbon nanotube powder is 1.5 μm, and the weight ratio of the composition of the paste is carbon nanotube: ethyl cellulose: butyl carbitol: butyl carbitol acetate = 4: 13: 42: 41. The paste described above may contain fine particles of low melting point glass, fine particles of silver, fine particles of nickel, or the like. As a screen printing mask, a 250 mesh screen plate is used.

After the carbon nanotube layer 220 is printed on the cathode electrode layer 210, the carbon nanotube layer 220 is dried in an atmosphere at 150 ° C. Thereafter, the carbon nanotube layer 220 is baked for 10 minutes in the atmosphere of 340 ° C. to 450 ° C., whereby the resin and solvent in the carbon nanotube layer 220 are burned and decomposed. In addition, when the above-mentioned low melting glass fine particles, silver fine particles, nickel fine particles, or the like are mixed in the screen printing paste, after the above-described steps, the temperature is from 530 ° C. to 560 ° C. It is desirable to perform a step of sintering the carbon nanotube layer 220. In this case, since it is necessary to prevent the carbon nanotubes from being burned out, it is desirable that the carbon nanotube layer 220 be fired in an N ₂ atmosphere.

<Step 3: Formation of insulating layer 230 (see FIG. 7)>
Next, a varnish-like silicone ladder polymer solution is applied on the upper surface of the cathode electrode layer 210, the side surfaces and the upper surface, which are the exposed surfaces of the carbon nanotube layer 220, and the exposed surface (not shown) of the cathode substrate 110. Thereafter, the silicone ladder polymer is heat-treated. Thereby, an insulating layer 230 having a thickness of about 10 μm is formed. More specifically, the following steps are performed.

  First, as an example of a silicone ladder polymer, powdery polyphenylsilsesquioxane (hereinafter referred to as “PPSQ”) is dissolved in anisole to prepare a varnish-like solution. Next, using a spray coater, a varnish-like solution is uniformly applied so as to cover the side surfaces and the upper surface, which are the exposed surfaces of the carbon nanotube layer 220, and the exposed surface of the cathode substrate 110. The spray coater is for obtaining a flat coating film by sweeping parallel to the upper surface of the cathode substrate 110 while spraying a spray-like varnish from the tip of the spray nozzle toward the cathode substrate 110.

  When spraying the varnish from the tip of the spray nozzle of the spray coater, by spraying pressurized air and nitrogen from the tip of the spray nozzle, mixing the varnish during the spraying and spraying it toward the cathode substrate 110, A homogeneous insulating layer 230 can be obtained. The sweep speed, sweep interval, and number of sweeps of the spray nozzle are adjusted so as to obtain a required film thickness. The viscosity of the varnish, the solvent type, and the substrate temperature are adjusted so that a good film quality can be obtained.

  Instead of the spray coater, the insulating layer 230 may be formed on the cathode substrate 110 by a spin coating method, a screen printing method, a method using a table coater for applying a varnish from a moving slit, or the like. .

  Next, using a hot plate, the cathode substrate 110 on which the insulating layer 230 is formed is heated in order at a temperature of 50 ° C., 90 ° C., and 120 ° C. and dried. Further, the cathode substrate 110 on which the insulating layer 230 is formed is heat-treated in the atmosphere at a temperature of 350 ° C. for 1 hour. Thereby, PPSQ is thermally cured and the insulating layer 230 is strengthened. Further, the thickness of the insulating layer 230 is about 10 μm.

  The reason why the temperature of the heat treatment by the hot plate is increased stepwise is that bubbles may be generated in the insulating layer 230 when the temperature of the applied insulating layer 230 is rapidly increased. This is because it is necessary to gradually dry the solvent component in the coating film. The temperature conditions shown here are the conditions under which the best results were obtained in experiments conducted by the present inventors. However, the temperature when the insulating layer is dried by a hot plate is not three stages, but two stages. Or one step. Further, even if the heat treatment of the insulating layer 230 is performed at 250 ° C., substantially the same result can be obtained.

  In addition, if the process of thermosetting a varnish-like PPSQ coating film is performed in nitrogen instead of in the air, it is possible to suppress oxidation of the surface of PPSQ. Further, if the step of thermosetting the varnish-like PPSQ coating film is performed in vacuum rather than in the air, the processing time can be shortened. In addition, if the curing temperature of the insulating layer 230 is set low, deterioration of the carbon nanotube layer 220 due to heat can be suppressed. As a result, the electron emission characteristics of the carbon nanotube layer 220 can be improved.

<Step 4: Formation of Gate Electrode Layer 300 (see FIG. 8)>
Next, a metal film to be the gate electrode layer 300 is formed over the insulating layer 230. For example, aluminum (Al) is formed on the gate electrode layer 300 by using a DC (Direct Current) magnetron sputtering method. As a method for forming the metal film, in addition to the sputtering method, a vapor deposition method or a plating method can be considered.

<Step 5: Formation of Resist Film 700 (see FIG. 9)>
Next, a resist film 700 is formed over the entire upper surface of the gate electrode layer 300. For example, the resist film 700 is applied over the gate electrode layer 300 by a spin coating method using a positive resist solution. Thereafter, the resist film 700 is dried.

<Step 6: Exposure / Development of Resist Film 700 (see FIG. 10)>
Thereafter, the resist film 700 is exposed through an exposure mask 800 having a circular transmission portion 800A corresponding to the cross-sectional shape of the opening 300A of the gate electrode layer 300 described later. Further, development is performed using an alkaline developer, and the exposed resist film is removed. As a result, a resist film 700P having a circular opening pattern 700A is formed. The opening pattern 700A corresponds to the opening 300A. In the present embodiment, the transmission portion 800A of the exposure mask 800 is circular, but may be a vertically long rectangular shape, a horizontally long rectangular shape, or a regular polygonal shape.

<Step 7: Etching of the gate electrode layer 300 (see FIG. 11)>
After that, the gate electrode layer 300 is etched using the resist film 700P having the opening pattern 700A as a mask to expose a part of the upper surface of the insulating layer 230. That is, the metal film located immediately below the circular opening pattern 700A in the resist film 700P is etched to open an opening (hole) 300A that penetrates the gate electrode layer 300 in a region located directly above the upper surface of the carbon nanotube layer 220. Form. For example, when the gate electrode layer 300 is made of an Al film, a phosphoric acid-based etchant is used as the Al film etchant. Since the etching rate changes depending on the temperature of the etching solution, it is desirable to increase the etching rate by keeping the solution temperature at 40 ° C. when etching the Al film.

<Step 8: Exposure of electron emitting portion (see FIG. 12)>
Next, the insulating layer 230 is dry-etched from the exposed surface (the bottom surface of the opening 300A: see FIG. 11) of the upper surface of the insulating layer 230 to expose the upper surface of the carbon nanotube layer 220. Thereby, the circular opening part (refer FIG. 12) which consists of opening part 230A, 300A is formed.

  Although the embodiments of the present invention have been described above, the embodiments disclosed this time should be considered as illustrative in all points and not restrictive. For example, the installation form of the photocatalyst is not particularly limited as long as the photocatalyst is exposed to the vacuum space. For example, the photocatalyst may be formed on each glass substrate in advance. The scope of the present invention is defined by the terms of the claims, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is sectional drawing which shows the field emission type image display apparatus which concerns on Embodiment 1 of this invention. It is a figure explaining the installation area of the photocatalyst in the field emission type image display apparatus concerning Embodiment 1 of this invention. It is sectional drawing which shows the non-evaporation type getter in the field emission type image display apparatus concerning Embodiment 2 of this invention. It is a figure explaining the installation area of the photocatalyst in the field emission type image display apparatus concerning Embodiment 3 of this invention. It is sectional drawing (the 1) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus which concerns on Embodiment 1-3 of this invention. It is sectional drawing (the 2) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus which concerns on Embodiment 1-3 of this invention. It is sectional drawing (the 3) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus which concerns on Embodiment 1-3 of this invention. It is sectional drawing (the 4) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus concerning Embodiment 1-3 of this invention. It is sectional drawing (the 5) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus which concerns on Embodiment 1-3 of this invention. It is sectional drawing (the 6) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus concerning Embodiment 1-3 of this invention. It is sectional drawing (the 7) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus concerning Embodiment 1-3 of this invention. It is sectional drawing (the 8) explaining the manufacturing process of the electron emission source in the field emission type image display apparatus concerning Embodiment 1-3 of this invention.

Explanation of symbols

  110 cathode substrate, 111 display region, 112 photocatalyst region, 120 anode substrate, 200 electron emission source, 210 cathode electrode layer, 220 carbon nanotube layer, 230 insulating layer, 230A, 300A opening, 300 shield electrode, 400 anode electrode, 500 Phosphor, 600 non-evaporable getter, 610 nickel-chromium substrate, 620 getter material, 630 photocatalyst layer, 700,700P resist film, 700A opening pattern, 800 exposure mask, 800A transmission part.

Claims (7)

A field emission image display device that emits electrons into a vacuum space and collides the electrons with a phosphor to cause the phosphor to emit light,
First and second substrates provided to face each other;
An electron emission source provided on the first substrate;
A phosphor provided on the second substrate;
A getter that adsorbs a gas in the vacuum space formed between the first and second substrates;
A photocatalyst provided in the vacuum space and capable of decomposing an organic compound or a polymer compound by being irradiated with a light beam including ultraviolet rays;
The field emission image display device, wherein the photocatalyst is provided on an outer periphery of a region where the electron emission source is provided on a plane parallel to the main surfaces of the first and second substrates.   The field emission image display device according to claim 1, wherein the photocatalyst is formed on a surface of the getter.   The field emission image display device according to claim 1, wherein ultraviolet rays are emitted when electrons collide with the phosphor provided on the second substrate. A field emission image display device that emits electrons into a vacuum space and collides the electrons with a phosphor to cause the phosphor to emit light,
First and second substrates provided to face each other;
An electron emission source provided on the first substrate;
A phosphor provided on the second substrate;
A getter that adsorbs a gas in the vacuum space formed between the first and second substrates;
A photocatalyst provided in the vacuum space and capable of decomposing an organic compound or a polymer compound by being irradiated with a light beam including ultraviolet rays;
Ultraviolet rays are emitted when electrons collide with the phosphor provided on the second substrate,
The field emission image display device, wherein the photocatalyst is provided on the second substrate.   The field emission type image display device according to claim 1, wherein the photocatalyst includes titanium oxide.   6. The field emission image display device according to claim 1, wherein the electron emission source includes a carbon nanotube layer. A getter material that adsorbs gas;
A non-evaporable getter provided with a photocatalyst layer formed on the surface of the getter material and capable of decomposing an organic compound or a polymer compound by irradiation with light including ultraviolet rays.

Images