JP4903771B2 - Cleaning equipment for semiconductor manufacturing equipment - Google Patents

Description

  The present invention relates to a semiconductor manufacturing apparatus cleaning apparatus for cleaning a semiconductor manufacturing apparatus for processing a semiconductor wafer or the like to manufacture a semiconductor device.

  Conventionally, in a semiconductor device manufacturing process, a semiconductor manufacturing apparatus for processing a substrate such as a semiconductor wafer to manufacture a semiconductor device has been used. In such a semiconductor manufacturing apparatus, for example, a film forming apparatus or an etching apparatus, the inside of a processing chamber for processing a semiconductor wafer or the like by processing may be contaminated by deposits or particles. For this reason, the semiconductor manufacturing apparatus is cleaned during maintenance or the like.

Cleaning of the semiconductor manufacturing apparatus as described above is often performed manually by an operator by wiping with a non-woven cloth using ethanol or the like, or dry wiping. Moreover, when removing a member and wash | cleaning, the method of wash | cleaning by air jet cleaning or ultrasonic cleaning is also known (for example, refer patent document 1).
JP 2003-273078 A

  As described above, conventionally, the semiconductor manufacturing apparatus is cleaned by wiping with a non-woven cloth. However, in such a cleaning method, since the wiping is performed manually, the cleaning effect varies depending on the operator, and it is difficult to obtain a quantitative cleaning effect. In addition, there has been a problem that in places where the hand cannot be reached in the apparatus, minute places, places with unevenness, etc., the washing becomes insufficient and particles may be generated even immediately after washing. Furthermore, there is a problem that secondary contamination may occur depending on wiping, and it is dangerous because a person directly touches the deposits.

  Further, when cleaning is performed by ultrasonic cleaning or air jet cleaning, it is necessary to remove the member, and there is a problem that time and labor are required for the cleaning operation. Accordingly, the present inventors have conventionally developed a cleaning apparatus for a semiconductor manufacturing apparatus that generates pure water steam from pure water and cleans the semiconductor manufacturing apparatus using the pure water steam. However, in a semiconductor manufacturing apparatus cleaning apparatus that cleans a semiconductor manufacturing apparatus using such pure water steam, high-temperature and high-pressure pure water steam generated in a pure water steam generation container is used. For this reason, when there is no pure water in the pure water steam generating container, the pure water steam generating container must be supplied with pure water after it has cooled to 100 ° C. or lower. There has been a problem that a time interval is left in the cleaning operation because it is necessary to wait until a predetermined high temperature and high pressure pure water steam is generated after being heated to a temperature. In addition, since the continuous cleaning time is limited to several minutes, there is a problem that the efficiency of the cleaning operation is deteriorated.

  The present invention has been made in response to the above-described conventional circumstances, and is to provide a cleaning apparatus for a semiconductor manufacturing apparatus that can perform a cleaning operation more efficiently than the conventional one and can obtain a high cleaning effect. It is what.

The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 1 is a cleaning apparatus for a semiconductor manufacturing apparatus, and includes a pure water steam generation container that generates pure water steam from pure water, and a supply port that supplies the pure water steam to a portion to be cleaned. A pure water steam supply line that connects the pure water steam generation container and the supply port, a pure water tank that stores pure water, and a pure water that connects the pure water tank and the pure water steam generation container A pure water supply pump inserted in the pure water supply line and supplied from the pure water tank to the steam generation container; and an amount of pure water in the pure water steam generation container. A sensor for detecting and driving the pure water supply pump in accordance with a signal from the sensor, supplying pure water in the pure water tank into the pure water steam generation container, and generating the pure water steam Continuously from the container And a control unit to the water steam can be generated, wherein to evaporate the deionized water while maintaining the pressure of the pure water steam generating vessel, the diameter of the opening for supplying the pure water steam of the supply port It is 1 to 1.5 mm .

Cleaning apparatus for a semiconductor manufacturing apparatus according to claim 2, a cleaning apparatus of a semiconductor manufacturing apparatus according to claim 1 Symbol placement, and wherein the sensor is a weight sensor for detecting the weight of the pure water steam generating vessel To do.

The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 3 is a cleaning apparatus for a semiconductor manufacturing apparatus, and includes a pure water steam generation container that generates pure water steam from pure water, and a supply port that supplies the pure water steam to a portion to be cleaned. A pure water steam supply line that connects the pure water steam generation container and the supply port, a pure water tank that stores pure water, and a pure water that connects the pure water tank and the pure water steam generation container A pure water supply pump inserted in the pure water supply line and supplied from the pure water tank to the steam generation container; and an amount of pure water in the pure water steam generation container. A sensor for detecting and driving the pure water supply pump in accordance with a signal from the sensor, supplying pure water in the pure water tank into the pure water steam generation container, and generating the pure water steam Continuously from the container And a control unit to the water steam can be generated, wherein a portion of the pure water supply line, the wound on the outside of the pure water steam generating vessel, the pure water supply line by the pure water steam generating vessel heat The pure water inside is heated .

The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 4 is a cleaning apparatus for a semiconductor manufacturing apparatus, and includes a pure water steam generation container that generates pure water steam from pure water, and a supply port that supplies the pure water steam to a portion to be cleaned. A pure water steam supply line that connects the pure water steam generation container and the supply port, a pure water tank that stores pure water, and a pure water that connects the pure water tank and the pure water steam generation container A pure water supply pump inserted in the pure water supply line and supplied from the pure water tank to the steam generation container; and an amount of pure water in the pure water steam generation container. A sensor for detecting and driving the pure water supply pump in accordance with a signal from the sensor, supplying pure water in the pure water tank into the pure water steam generation container, and generating the pure water steam Continuously from the container And a control unit to the water steam can be generated, characterized by having the preheating mechanism comprises a resistance heating heater pre-heat the pure water of the pure water supply line or said pure water tank.

The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 5 is the cleaning apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 4 , wherein the pure water steam generation container has a resin-coated contact surface with pure water. Or it is comprised by electropolishing.

The semiconductor manufacturing apparatus cleaning apparatus according to claim 6 is the semiconductor manufacturing apparatus cleaning apparatus according to any one of claims 1 to 5 , wherein the contact surface of the supply line with pure water steam is made of a resin material. It is characterized by being.

The semiconductor manufacturing apparatus cleaning apparatus according to claim 7 is the semiconductor manufacturing apparatus cleaning apparatus according to any one of claims 1 to 6 , wherein the supply line has conductivity and is electrically grounded. It is characterized by being.

The semiconductor manufacturing apparatus cleaning apparatus according to claim 8 is the semiconductor manufacturing apparatus cleaning apparatus according to any one of claims 1 to 7 , wherein the used steam used for cleaning is provided around the supply port. And a recovery container for condensing and recovering the used steam, and a recovery line for connecting the recovery port and the recovery container.

The semiconductor manufacturing apparatus cleaning apparatus according to claim 9 is the semiconductor manufacturing apparatus cleaning apparatus according to claim 8 , wherein the supply line and the recovery line are located at a part of the supply port side and the recovery port side. It is a double piping structure.

The semiconductor manufacturing apparatus cleaning apparatus according to claim 10 is the semiconductor manufacturing apparatus cleaning apparatus according to claim 8 or 9 , wherein the recovery line has conductivity and is electrically grounded. And

  ADVANTAGE OF THE INVENTION According to this invention, the washing | cleaning apparatus of the semiconductor manufacturing apparatus which can perform a cleaning operation | work efficiently compared with the past, and can acquire a high cleaning effect can be provided.

  Hereinafter, embodiments of a cleaning apparatus for a semiconductor manufacturing apparatus according to the present invention will be described with reference to the drawings.

  FIG. 1 shows a configuration of a cleaning apparatus of a semiconductor manufacturing apparatus according to an embodiment of the present invention. As shown in the figure, a cleaning apparatus 100 of a semiconductor manufacturing apparatus includes a case 1 for housing equipment therein. In this case 1, a pure water steam generating container 2 for generating pure water steam from pure water (including ultrapure water) is provided.

  The pure water steam generation container 2 is made of metal such as stainless steel, for example, in order to accommodate high temperature and high pressure pure water steam. In order to prevent impurities such as metal ions from entering, pure water in the pure water steam generation container 2 and the contact surface with the pure water steam are made of resin. As described above, as a method of forming the contact surface with pure water and pure water steam with a resin, a method of coating the resin in the pure water steam generation container 2 can be used. As such a resin, for example, PEEK (trade name (polyetheretherketone)), PFA (perfluoroalkoxyl alkane) and the like can be used. As other methods, electrolytic polishing or chemical polishing may be used.

  A heater 2 a is provided in the pure water steam generation container 2. The heater 2 a is disposed in the vicinity of the bottom of the pure water steam generation container 2 so as to be positioned in the lower half of the pure water steam generation container 2. As the heater 2a, a heater having a capacity of about 1000 to 2500 W (2100 W in this embodiment) is preferably used. The heater 2a generates heat at a high temperature, for example, about 150 ° C. Generate steam. The pure water steam generation container 2 is provided with a weight sensor 3 as a sensor for detecting the amount of pure water in the pure water steam generation container 2. Further, the pure water steam generation container 2 is provided with a pressure sensor 18 for detecting the pressure in the pure water steam generation container 2. A drain pipe is provided at the bottom of the pure water steam generation container 2, and a drain valve 16 is inserted in the drain pipe. In addition, a relief pipe having a relief valve 17 that is activated when the pressure inside the pure water steam generation container 2 becomes a predetermined value or more is connected to the ceiling of the pure water steam generation container 2.

  A pure water tank 5 is connected to the pure water steam generation container 2 through a pure water supply line 4, and the pure water tank 5 passes through the pure water supply line 4 and enters the pure water steam generation container 2. Pure water is supplied. A pure water supply pump 6, a filter 7, and an on-off valve 8 are inserted in the pure water supply line 4.

  Further, one end of a pure water steam supply line 9 is connected to the upper part of the pure water steam generation container 2, and the pure water steam is supplied to the portion to be cleaned to the other end of the pure water steam supply line 9. A supply port 10 is provided. The pure water steam supply line 9 is provided with an on-off valve 15 for controlling supply / stop of the pure water steam.

  The pure water steam supply line 9 is composed of an annular member having flexibility, and pure water steam circulates through the inside thereof. Further, in order to prevent contamination of impurities such as metal ions, the contact surface with pure water steam in the pure water steam supply line 9 is made of resin (in this embodiment, made of PFA). In this embodiment, the pure water steam supply line 9 has a structure in which a conductive layer made of a conductive member (for example, conductive PFA) is arranged outside the resin side wall, and this conductive layer is grounded. Connected to potential.

  The conductive layer is for preventing the pure water steam supply line 9 from being charged by static electricity generated by the pure water steam flowing through the pure water steam supply line 9. In this embodiment, a Naflon PFA-NE tube (trade name: manufactured by Nichias) was used as a tube constituting the pure water steam supply line 9. If such antistatic measures are not taken, problems such as malfunctions occur in the control unit 20 described later due to electrostatic charging, and discharge of static electricity when touched by an operator occur. In the present embodiment, a Naflon PFA-NE tube (trade name: manufactured by Nichias Co., Ltd.) for which antistatic measures are taken is also used for the pure water supply line 4 described above.

  As shown in FIG. 1, a recovery port 11 is provided around the supply port 10 so as to protrude from the supply port 10 toward the tip side. The recovery port 11 is used for recovering the used steam supplied to the cleaned portion and used for cleaning, and for recovering the peeled material peeled off from the cleaned portion. The recovery port 11 has a double pipe structure in which a recovery line 12 is provided outside the pure water steam supply line 9. The collection line 12 is made of a flexible material, and can be flexibly bent even in a double tube structure. Further, the collection line 12 is made of a conductive material so that static electricity does not accumulate during the used steam collection process. In this embodiment, a TAC duct AS (trade name: manufactured by To Taku Kogyo Co., Ltd.) is used as a tube constituting the collection line 7.

  The recovery port 11 has a flexible resin cylindrical shape so that the shape of the recovery port 11 is deformed to some extent in accordance with the shape of the portion to be cleaned when cleaning is performed while supplying pure water steam to the portion to be cleaned. It consists of members. Further, since the portion of the recovery port 11 is a part that directly contacts the inside of the processing chamber of the semiconductor manufacturing apparatus to be cleaned, it is flexible so as not to damage the processing chamber and the like, and is also contaminated with impurities and particles. It is necessary to make it from the material which can prevent the contamination by.

  The end of the recovery line 12 is connected to a recovery container 13 provided in the case 1. The recovery container 13 is for condensing the recovered pure water steam after washing and returning it to water, and storing this water. A vacuum cleaner 14 serving as a suction source for recovering pure water steam is connected to the recovery container 13.

  An inlet-side filter 14a is provided on the inlet side of the vacuum cleaner 14 so as to prevent particles or the like removed by cleaning from entering the vacuum cleaner 14 side. Further, an outlet side filter 14b is provided on the outlet side of the vacuum cleaner 14 so as to prevent particles and the like from being scattered in the clean room. The exhaust port 14c on the outlet side of the vacuum cleaner 14 can be connected to the exhaust path of the clean room.

  Further, the above-described control unit 20 including a CPU, a memory, and the like is provided on the upper portion of the case 1 so as to control the operation of each unit described above.

  When the semiconductor manufacturing apparatus is cleaned using the semiconductor manufacturing apparatus cleaning apparatus 100 having the above configuration, pure water is introduced into the pure water tank 5 in advance, and pure water is supplied from the pure water tank 5 to the pure water steam generation container 2. And heated by the heater 2a to generate pure water steam from the pure water, and this pure water steam is stored in the pure water steam generation container 2. At this time, the pressure in the pure water steam generation container 2 is detected by the pressure sensor 18, and the power supply to the heater 2 a is controlled by the control unit 20 so that the pressure in the pure water steam generation container 2 becomes a predetermined pressure. Is done. In other words, when the heater 2a is heated, a sufficient amount of pure water steam is generated in the pure water steam generation container 2, and the heater 2a is energized when the pressure in the pure water steam generation container 2 reaches a predetermined pressure. Can be stopped or switched to a supply of a small amount of power so that this state can be maintained. Further, as will be described later, when pure water steam is injected and the pressure in the pure water steam generation container 2 falls below a predetermined pressure, a large amount of electric power is supplied to the heater 2a to promote heating of the pure water. To generate pure water steam.

  Next, in a state where the recovery port 11 is pressed against the site to be cleaned of the semiconductor manufacturing apparatus, the on-off valve 15 is opened, and pure water steam is supplied from the pure water steam generation container 2. At this time, the pure water steam generated in the pure water steam generation container 2 and accumulated in the pure water steam generation container 2 passes through the pure water steam supply line 9 from the pure water steam generation container 2 and passes through the pure water. It is supplied to the steam supply port 10 and supplied from the pure water steam supply port 10 toward the portion to be cleaned. Deposits, particles, and the like attached to the portion to be cleaned are removed by the injection of pure water steam.

  Then, the deposits, particles, and the like separated from these parts to be cleaned are collected from the parts to be cleaned together with the used steam used for cleaning by the recovery port 11. Deposits, particles, and the like separated from the used steam and the portion to be cleaned are collected from the collection port 11 into the collection container 13 by the collection line 12.

  The used steam collected in the collection container 13 is cooled and condensed in the collection container 13. The condensed water is stored in the collection container 13. Further, deposits, particles and the like separated from the portion to be cleaned are also stored in the collection container 13.

  When the cleaning operation is performed as described above, pure water in the pure water steam generation container 2 is consumed and reduced. This decrease in pure water in the pure water steam generation container 2 can be detected by the weight sensor 3 as a decrease in the weight of the pure water steam generation container 2. As shown in the flowchart of FIG. 2, the control unit 20 determines whether or not the pure water level in the pure water steam generation container 2 has fallen below a predetermined lower limit level based on the detection signal from the weight sensor 3. Monitor (201). When the pure water level falls below the lower limit level, the pure water supply pump 6 is driven and the on-off valve 8 is opened to start the supply of pure water from the pure water tank 5 into the pure water steam generating container 2. (202). When the pure water level in the pure water steam generation container 2 reaches a predetermined upper limit level (202), the open / close valve 8 is closed and the pure water supply pump 6 is stopped. In this way, the amount of pure water (water level) in the pure water steam generation container 2 is kept at a certain level. As a result, it is possible to continuously supply pure water steam so that a continuous cleaning operation can be performed. In the present embodiment, the capacity of the pure water steam generation container 2 is 2 liters, and the amount of pure water in the pure water steam generation container 2 is set to be about 1 liter.

  Here, if the amount of heat released from the pure water steam generation container 2 by the pure water steam released from the pure water steam generation container 2 is greater than the amount of heat supplied by the heater 2a, the pure water steam generation container Even if the amount of pure water in 2 is kept at a certain level, pure water steam cannot be continuously supplied. That is, the supply of new pure water decreases the temperature and pressure in the pure water steam generation container 2, and the pure water steam cannot be continuously discharged.

FIG. 3 shows a model for considering the above heat quantity. In FIG. 3, d is the nozzle diameter (opening diameter) (m) of the pure water steam supply port 10, and A is the nozzle area (opening area) (m ² ), P is the nozzle secondary pressure (Pa), m is the mass flow rate of the steam (kg / s), P0 is the nozzle primary pressure (Pa), and ρ is the vapor density in the pure water steam generation vessel 2 ( P0 / RT), T is the temperature (K), and a is the speed of sound (m / s). In this case, κ is the specific heat ratio (Cp / Cv) (constant pressure specific heat / quantitative specific heat), Cv = {1 / (κ-1)} R, and R is the gas constant (J / kg · K), and the mass flow rate of steam m is
m = ρ · a · A {2 / (κ-1) [(P / P0) ^{2 / κ−} (P / P0) ^{κ + 1 / κ} ]} ^1/2
Can be expressed as

Further, the amount of heat for evaporating while maintaining the pressure in the pure water steam generation container 2 is L as latent heat of vaporization (J / kg).
W = m × L = (7 × 10 ⁻⁴ ) × (2.13 × 10 ⁶ )
= 1500W
= 1500 × K = 2100W
It becomes. However, when the water vapor in the pure water steam generation container 2 is 0.3 MPa and the nozzle diameter is 1.4 mm, the mass flow rate is 7 × 10 ⁻⁴ (kg / s), and K is a correction coefficient based on the experimental results. 4.

  FIG. 4 shows the relationship between the horizontal axis as the nozzle diameter (mm) of the pure water steam supply port 10 and the vertical axis as the heater capacity (W) required to continuously supply pure water steam. Is. As shown in the figure, if the diameter of the pure water steam supply port 10 is about 1 mm, the heater capacity may be about 1000 W, but if it is 3 mm, about 10000 W is required. Practically, it is difficult to configure a heater having a heater capacity of 2500 W or more within the volume of the predetermined pure water steam generation container 2. Therefore, the nozzle diameter of the pure water steam supply port 10 is preferably 1.5 mm or less.

  In order to continuously inject pure water steam, it is necessary that the nozzle diameter and the heater capacity have a certain relationship. As shown in FIG. 4, by making the heater capacity appropriate for the nozzle diameter, efficient and effective continuous injection of pure water steam becomes possible. If it is configured with a heater capacity of 2000 W or more with respect to a nozzle diameter of 1 mm, steam can be continuously injected, but a large heater is wasted.

On the other hand, from the viewpoint of the cleaning effect, the cleaning effect tends to be higher as the nozzle diameter of the pure water steam supply port 10 is larger to some extent. FIG. 5 shows the results of examining the difference in cleaning effect when the nozzle diameter of the pure water steam supply port 10 is 1 mm, 3 mm, and 7 mm. That is, the deposit (depot) resulting from the plasma of C ₄ F ₈ gas deposited on a sample (aluminum plate (30 mm × 30 mm × 2 mm) anodized on the surface) simulating parts of a semiconductor manufacturing apparatus The cleaning effect is compared when the cleaning device 100 of the semiconductor manufacturing apparatus according to the above embodiment is changed to change the nozzle diameter of the pure water steam supply port 10 to 1 mm, 3 mm, and 7 mm. It is shown. The comparison of the cleaning effect is shown by the analysis result by EDX (energy dispersive X-ray analyzer). In the same figure, (a) is before deposition of deposit, (b) is immediately after deposition of deposit, (c) is when nozzle diameter is 1 mm, (d) is when nozzle diameter is 3 mm, (e ) Shows the results when the nozzle diameter is 7 mm. 5 shows the case where the pure water steam temperature is 130 ° C., and the lower part shows the case where the pure water steam temperature is 150 ° C.

  As shown in FIG. 5A, before the deposit is deposited, the O peak and the Al peak are high, and the C peak, the F peak, and the like are low. Further, as shown in (b), after the deposit is deposited, since the surface is covered with the deposit, the O peak and the Al peak are lowered, and the C peak and the F peak are raised. (C) As shown in (d), when cleaning is performed with pure water steam at a nozzle diameter of 1 mm and 3 mm, the peak of C is lower than that of (b), there is almost no peak of F, and the peak of O , The peak of Al was high, and was almost in the same state as (a) before deposition of the deposit. On the other hand, although the peak of F is lower than that of (b) at the nozzle diameter of 7 mm, it cannot be said that F is completely cleaned. Thus, if the nozzle diameter of the pure water steam supply port 10 was in the range of 1 to 3 mm, substantially the same good cleaning effect was obtained. On the other hand, when the nozzle diameter of the pure water steam supply port 10 was less than 1 mm, the cleaning effect was reduced as in 7 mm. Therefore, the nozzle diameter of the pure water steam supply port 10 is preferably 1 mm or more and 3 mm or less.

  As is clear from the above description, in order to enable continuous injection of pure water steam in a range where the heater can be configured and a sufficient cleaning effect can be obtained, the nozzle of the pure water steam supply port 10 is used. The diameter is preferably in the range of 1 to 1.5 mm.

  As described above, in order to continuously generate pure water steam from the pure water steam generation container 2, the pure water supplied from the pure water tank 5 to the pure water steam generation container 2 is heated to some extent in advance. It is also effective to keep it. For this reason, it is good also as a structure which wound a part of pure water supply line 4 around the pure water steam production | generation container 2 as shown in FIG. 7 which expands and shows the principal part of FIG.6 and FIG.6. In FIG. 7, reference numeral 30 denotes a heat insulating material surrounding the pure water steam generation container 2 and the pure water supply line 4.

The outer diameter of the pure water steam generating container 2 is about 165 mm, the amount of pure water in the pure water steam generating container 2 is 1.5 liters, and the inner temperature of the pure water steam generating container 2 is 143.6 ° C. (0. 3MpaG), the outside temperature is about 133 ° C. In this case, when the pure water supply line 4 is made of stainless steel piping (inner diameter 2.17 mm, outer diameter 3.17 mm, wall thickness 0.5 mm, thermal conductivity 0.2 W / (m · K)), it is wound once. The length is about 528.8 mm, the heat transfer area at one turn is 5263.3 mm ² , and the volume at one turn is about 0.002 liters. In this case, the tube length L for setting the water at the initial water temperature Tm0 to the target temperature TmL is:
L = Wcp (TmL-Tm0) / (πDq)
q = Q / A
Given in.
However, W is the flow rate of pure water (7.0 × 10 ⁻⁴ kg / s)
Cp is the low-pressure specific heat (4.19 × 10 ³ J / kg · K ((20 + 95) / 2 = property value of water at 60 ° C.))
D is the inner diameter of the tube (0.0022m)
q is the average heat flux (321600.38 W / m ² )
Q is the amount of heat transferred from the tank surface (170.45 W (for one tube))
A is the heat transfer area (0.0053m (for one round of the tube))
It is. In this case, in order to make 20 ° C. pure water 95 ° C., L = 0.99,
0.99 ÷ 0.5288 = 1.9 (winding)
It becomes. That is, if it is wound around the outside of the pure water steam generating container 2 by about 2 turns, the pure water in the pure water supply line 4 can be preheated from about 20 ° C. to about 95 ° C.

  In addition, as shown in FIG. 6, a preheating mechanism 31 including a resistance heater for preheating pure water in the pure water supply line 4 may be provided in the pure water supply line 4. Such a preheating mechanism for preheating pure water may be provided in the pure water tank 5 or in both the pure water supply line 4 and the pure water tank 5.

  FIG. 8 shows a case where cleaning for removing particles adhering to parts of a quartz semiconductor manufacturing apparatus is performed by the cleaning apparatus 100 of the semiconductor manufacturing apparatus according to the above embodiment, and wiping with a non-woven cloth using alcohol. This shows a comparison of the cleaning effect in the case of the above. In the figure, the vertical axis indicates the number of particles per unit area adhering to the parts of the quartz semiconductor manufacturing apparatus. The solid line A indicates the alcohol when the semiconductor manufacturing apparatus cleaning apparatus 100 is used, and the dotted line B indicates the alcohol. The result at the time of performing by wiping off with the non-woven cloth using this is shown. Cleaning was performed 5 times in total, and the number of particles adhering to the parts was counted for each cleaning. As shown in the figure, when the cleaning apparatus 100 of the semiconductor manufacturing apparatus was used, the number of particles could be reduced by about one digit compared with the case of wiping.

FIG. 9 shows deposits (C ₄ F ₈ gas plasma deposited on a sample (aluminum plate (30 mm × 30 mm × 2 mm) anodized on the surface) simulating parts of a semiconductor manufacturing apparatus. The cleaning effect when the cleaning for removing the deposit is performed by the cleaning apparatus 100 of the semiconductor manufacturing apparatus according to the above embodiment and when the cleaning is performed by wiping with a non-woven cloth using alcohol is shown. The comparison of the cleaning effect is shown by the analysis result by EDX (energy dispersive X-ray analyzer). In the figure, (a) is before deposit deposition, (b) is immediately after deposition, (c) is wiped with a non-woven cloth using alcohol, and (d) is a semiconductor manufacturing apparatus according to the above embodiment. The result after washing | cleaning by the washing | cleaning apparatus 100 of FIG.

  In the case of wiping with a non-woven cloth using alcohol, washing was performed by visual observation until the deposits did not adhere to the non-woven cloth, and the washing time at this time was about 4 to 5 minutes. On the other hand, in the cleaning by the cleaning apparatus 100 of the semiconductor manufacturing apparatus, the diameter of the pure water steam supply port 5 is 3 mm, the set temperature in the pure water steam generation container 2 is 150 ° C., and the pure water steam supply port 5 and the sample The distance is 1 to 2 mm and the cleaning time is 30 seconds.

  As shown in FIG. 9A, before the deposit is deposited, the O peak and the Al peak are high, and the C peak, the F peak, and the like are low. Further, as shown in (b), after the deposit is deposited, since the surface is covered with the deposit, the O peak and the Al peak are lowered, and the C peak and the F peak are raised. When wiping with a non-woven cloth using alcohol, as shown in (c), the peak of C and the peak of F are lower and the peak of O and Al are higher than in (b), This is clearly different from (a) before depositing.

  On the other hand, when cleaning with pure water steam is performed by the cleaning apparatus 100 of the semiconductor manufacturing apparatus according to the embodiment, as shown in (d), the peak of C and the peak of F are lower than in (b), The peak of O and the peak of Al were high, and were almost in the same state as (a) before depositing. Thus, according to the present embodiment, it has been found that the cleaning effect of removing deposits is clearly superior to the conventional method. In addition, the cleaning time can be shortened to a fraction of that of the conventional method, and the cleaning can be performed efficiently.

The figure which shows schematic structure of the washing | cleaning apparatus of the semiconductor manufacturing apparatus which concerns on one Embodiment of this invention. The flowchart which shows control of the pure water level in the pure water steam production | generation container by a control part. The figure which shows the model at the time of considering the calorie | heat amount in continuous injection. The graph which shows the relationship between a nozzle diameter and the heater capacity | capacitance required for continuous injection. The graph which shows the result of having investigated the cleaning effect of the deposit of the cleaning apparatus of the semiconductor manufacturing apparatus of FIG. 1 by changing the nozzle diameter. The figure which shows the principal part schematic structure of the modification of the washing | cleaning apparatus of the semiconductor manufacturing apparatus of FIG. The figure which expands and shows the principal part schematic structure of FIG. The graph which shows the result of having investigated the cleaning effect of the dust of the cleaning device of the semiconductor manufacturing device of FIG. The graph which shows the result of having investigated the washing | cleaning effect of the deposit of the washing | cleaning apparatus of the semiconductor manufacturing apparatus of FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 100 ... Cleaning device of semiconductor manufacturing equipment, 1 ... Case, 2 ... Pure water steam generation container, 3 ... Weight sensor, 4 ... Supply line, 5 ... Pure water tank, 6 ... Pure water supply pump 7 ... Filter, 8 ... Open / close valve, 9 ... Pure water steam supply line, 10 ... Pure water steam supply port, 11 ... Recovery port, 12 ... Recovery line, 13 ... Recovery container, 14 ... ... Vacuum cleaner, 20 ... Control part.

Claims (10)

A cleaning device for semiconductor manufacturing equipment,
A pure water steam generating container for generating pure water steam from pure water;
A supply port for supplying pure water steam to the site to be cleaned;
A pure water steam supply line connecting the pure water steam generation container and the supply port;
A pure water tank for storing pure water;
A pure water supply line connecting the pure water tank and the pure water steam generation container;
A pure water supply pump inserted in the pure water supply line, for supplying pure water from the pure water tank to the steam generation container;
A sensor for detecting the amount of pure water in the pure water steam generation container;
The pure water supply pump is driven in accordance with a signal from the sensor, and pure water in the pure water tank is supplied into the pure water steam generation container, and pure water is continuously supplied from the pure water steam generation container. And a control unit that can generate steam ,
The diameter of the opening for supplying pure water steam at the supply port is set to 1 to 1.5 mm so as to evaporate pure water while maintaining the pressure in the pure water steam generation container. Cleaning equipment for semiconductor manufacturing equipment. A cleaning apparatus for a semiconductor manufacturing apparatus according to claim 1 Symbol placement,
A cleaning apparatus for a semiconductor manufacturing apparatus, wherein the sensor is a weight sensor for detecting a weight of the pure water steam generation container. A cleaning device for semiconductor manufacturing equipment,
A pure water steam generating container for generating pure water steam from pure water;
A supply port for supplying pure water steam to the site to be cleaned;
A pure water steam supply line connecting the pure water steam generation container and the supply port;
A pure water tank for storing pure water;
A pure water supply line connecting the pure water tank and the pure water steam generation container;
A pure water supply pump inserted in the pure water supply line, for supplying pure water from the pure water tank to the steam generation container;
A sensor for detecting the amount of pure water in the pure water steam generation container;
The pure water supply pump is driven in accordance with a signal from the sensor, and pure water in the pure water tank is supplied into the pure water steam generation container, and pure water is continuously supplied from the pure water steam generation container. A controller that can generate steam and
With
A part of the pure water supply line is wound around the outside of the pure water steam generation container, and the pure water in the pure water supply line is heated by heat of the pure water steam generation container. Cleaning equipment for semiconductor manufacturing equipment. A cleaning device for semiconductor manufacturing equipment,
A pure water steam generating container for generating pure water steam from pure water;
A supply port for supplying pure water steam to the site to be cleaned;
A pure water steam supply line connecting the pure water steam generation container and the supply port;
A pure water tank for storing pure water;
A pure water supply line connecting the pure water tank and the pure water steam generation container;
A pure water supply pump inserted in the pure water supply line, for supplying pure water from the pure water tank to the steam generation container;
A sensor for detecting the amount of pure water in the pure water steam generation container;
The pure water supply pump is driven in accordance with a signal from the sensor, and pure water in the pure water tank is supplied into the pure water steam generation container, and pure water is continuously supplied from the pure water steam generation container. A controller that can generate steam and
With
An apparatus for cleaning a semiconductor manufacturing apparatus, comprising: a preheating mechanism including a resistance heater that preheats pure water in the pure water supply line or the pure water tank. A cleaning apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 4 ,
A cleaning apparatus for a semiconductor manufacturing apparatus, wherein the pure water steam generation container has a contact surface with pure water formed by resin coating or electrolytic polishing. A cleaning apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 5 ,
A cleaning apparatus for a semiconductor manufacturing apparatus, wherein the supply line has a contact surface made of a resin material with pure water steam. A cleaning apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 6 ,
A cleaning apparatus for a semiconductor manufacturing apparatus, wherein the supply line has conductivity and is electrically grounded. A cleaning apparatus for a semiconductor manufacturing apparatus according to any one of claims 1 to 7 ,
A recovery port provided around the supply port and used for cleaning the used steam from the site to be cleaned;
A collection container for condensing and collecting used steam;
A cleaning apparatus for a semiconductor manufacturing apparatus, comprising: a recovery line connecting the recovery port and the recovery container. A cleaning apparatus for a semiconductor manufacturing apparatus according to claim 8 ,
2. The cleaning apparatus for a semiconductor manufacturing apparatus according to claim 1, wherein the supply line and the recovery line have a double piping structure at a part of the supply port side and the recovery port side. A cleaning apparatus for a semiconductor manufacturing apparatus according to claim 8 or 9 ,
The cleaning apparatus of a semiconductor manufacturing apparatus, wherein the recovery line has conductivity and is electrically grounded.

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