JP4904199B2 - 光並列演算素子 - Google Patents
光並列演算素子 Download PDFInfo
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- JP4904199B2 JP4904199B2 JP2007134771A JP2007134771A JP4904199B2 JP 4904199 B2 JP4904199 B2 JP 4904199B2 JP 2007134771 A JP2007134771 A JP 2007134771A JP 2007134771 A JP2007134771 A JP 2007134771A JP 4904199 B2 JP4904199 B2 JP 4904199B2
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- light
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- 230000003287 optical effect Effects 0.000 title claims description 111
- 239000000126 substance Substances 0.000 claims description 19
- 238000005192 partition Methods 0.000 claims description 12
- 230000005283 ground state Effects 0.000 claims description 5
- 230000005281 excited state Effects 0.000 claims description 4
- 239000000990 laser dye Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 description 14
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- VYXSBFYARXAAKO-WTKGSRSZSA-N chembl402140 Chemical compound Cl.C1=2C=C(C)C(NCC)=CC=2OC2=C\C(=N/CC)C(C)=CC2=C1C1=CC=CC=C1C(=O)OCC VYXSBFYARXAAKO-WTKGSRSZSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 2- [6- (ethylamino) -3- (ethylimino)- 2,7-dimethyl-3H-xanthen-9-yl] -ethyl Chemical group 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- UPZKDDJKJWYWHQ-UHFFFAOYSA-N 2-(3-azaniumyl-6-iminoxanthen-9-yl)benzoate Chemical compound C=12C=CC(=N)C=C2OC2=CC(N)=CC=C2C=1C1=CC=CC=C1C(O)=O UPZKDDJKJWYWHQ-UHFFFAOYSA-N 0.000 description 1
- ACNUVXZPCIABEX-UHFFFAOYSA-N 3',6'-diaminospiro[2-benzofuran-3,9'-xanthene]-1-one Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(N)C=C1OC1=CC(N)=CC=C21 ACNUVXZPCIABEX-UHFFFAOYSA-N 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Description
F. Bos, Appl. Optics, vol.20, No.20, 3553 (1981) G. T. Kovacs, N. I. Maluf and K. E. Peterson, "Bulk Micromachining of Silicon", Proceedings of the IEEE, vol. 86, No.8, 1536 (1998)
12、32 隔壁
13、33 底部
14、34 光応答性物質
15、35 光学窓
16、36 ミラー
Claims (5)
- 互いに隣接して設けられる複数の光学セルを有し、
各光学セルは、上部に光の入射部を有するとともに、光透過性隔壁と底部で区画化された空間に、光の情報を受けたときに応答する光応答性物質を収容し、底部には上方から入射した光を反射して光透過性隔壁を介して隣接した光学セルに導くためのミラーが設けられ、
前記光応答性物質は、第1の特定波長の光のみを照射したときには基底状態から励起状態に励起した後第2の特定波長の光を発光しながら基底状態に失活し、第1の特定波長の光と第2の特定波長の光を同時に照射したときには誘導放出により第2の特定波長の強い光を発光するものであり、
各光学セルへの光照射を制御し、隣接する光学セルとの光の遣り取りを行うことにより、両光学セル間のアナログ演算を行うことを特徴とする光並列演算素子。 - 光応答性物質がレーザー色素であることを特徴とする請求項1に記載の光並列演算素子。
- 各光学セルの形状が平面視正方形状であり、底部の形状が四角錐状であることを特徴とする請求項1又は2に記載の光並列演算素子。
- 各光学セルの形状が平面視正三角形状であり、底部の形状が三角錐状であることを特徴とする請求項1又は2に記載の光並列演算素子。
- 各光学セルの形状が平面視正六角形状であり、底部の形状が六角錐状であることを特徴とする請求項1又は2に記載の光並列演算素子。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007134771A JP4904199B2 (ja) | 2007-05-21 | 2007-05-21 | 光並列演算素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007134771A JP4904199B2 (ja) | 2007-05-21 | 2007-05-21 | 光並列演算素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008287676A JP2008287676A (ja) | 2008-11-27 |
| JP4904199B2 true JP4904199B2 (ja) | 2012-03-28 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007134771A Expired - Fee Related JP4904199B2 (ja) | 2007-05-21 | 2007-05-21 | 光並列演算素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4904199B2 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5512322B2 (ja) * | 2010-02-16 | 2014-06-04 | 独立行政法人物質・材料研究機構 | 光並列演算素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7443902B2 (en) * | 2003-10-15 | 2008-10-28 | California Institute Of Technology | Laser-based optical switches and logic |
| JP2005258406A (ja) * | 2003-12-26 | 2005-09-22 | Canon Inc | 光素子及びその製造方法 |
| US7417788B2 (en) * | 2005-11-21 | 2008-08-26 | Aditya Narendra Joshi | Optical logic device |
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2007
- 2007-05-21 JP JP2007134771A patent/JP4904199B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
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| JP2008287676A (ja) | 2008-11-27 |
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