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JP4916956B2 - Substrate processing equipment - Google Patents
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JP4916956B2 - Substrate processing equipment - Google Patents

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JP4916956B2
JP4916956B2 JP2007153784A JP2007153784A JP4916956B2 JP 4916956 B2 JP4916956 B2 JP 4916956B2 JP 2007153784 A JP2007153784 A JP 2007153784A JP 2007153784 A JP2007153784 A JP 2007153784A JP 4916956 B2 JP4916956 B2 JP 4916956B2
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pressure
chamber
concentration
vacuum
solvent
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JP2008306097A (en
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友明 相原
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Description

本発明は、半導体ウエハや液晶表示装置用のガラス基板(以下、単に基板と称する)等の基板に対して、処理液により洗浄、エッチング等の処理を行った後の基板を、溶剤蒸気により乾燥させる基板処理装置に関する。   In the present invention, a substrate such as a semiconductor wafer or a glass substrate (hereinafter simply referred to as a substrate) for a liquid crystal display device is subjected to a treatment such as cleaning and etching with a treatment liquid, and then the substrate is dried with a solvent vapor. The present invention relates to a substrate processing apparatus.

従来、この種の装置として、チャンバ内を減圧するとともに溶剤蒸気、例えば、イソプロピルアルコール(IPA)の蒸気をチャンバ内に供給して、基板に付着した処理液を溶剤蒸気により置換させ、基板を乾燥させるものがある(例えば、特許文献1参照)。溶剤濃度は基板の乾燥度合いに密接に関連するので、チャンバ内の気体を測定管に小型サンプリングポンプで吸引しつつ溶剤の濃度を濃度計で測定することが行われる。
特開平9−190997号公報
Conventionally, as this type of device, the inside of the chamber is depressurized and a solvent vapor, for example, isopropyl alcohol (IPA) vapor is supplied into the chamber to replace the processing liquid adhering to the substrate with the solvent vapor, and the substrate is dried. (For example, refer to Patent Document 1). Since the solvent concentration is closely related to the degree of drying of the substrate, the concentration of the solvent is measured with a densitometer while the gas in the chamber is sucked into the measuring tube with a small sampling pump.
Japanese Patent Laid-Open No. 9-190997

しかしながら、このような構成を有する従来例の場合には、次のような問題がある。
すなわち、従来の装置は、濃度計が減圧下での測定に対応していないので、濃度の測定を行うタイミングではチャンバ内の減圧を行うことができないので、減圧された基板の乾燥環境下における正確な溶剤濃度を測定できないという問題がある。また、濃度計は高濃度の溶剤濃度を測定できないので、窒素ガスなどの不活性ガスによって溶剤濃度を薄めた上で測定を行う必要があり、正確な溶剤濃度を測定することができない上、窒素ガス等による希釈で余分な排気が増大するという問題がある。
However, the conventional example having such a configuration has the following problems.
In other words, since the conventional apparatus does not support the measurement under reduced pressure, the pressure inside the chamber cannot be reduced at the timing of concentration measurement. There is a problem that it is not possible to measure the solvent concentration. In addition, since the densitometer cannot measure a high concentration of solvent, it is necessary to perform measurement after diluting the solvent concentration with an inert gas such as nitrogen gas, and it is impossible to measure the exact solvent concentration. There is a problem that excess exhaust increases due to dilution with gas or the like.

本発明は、このような事情に鑑みてなされたものであって、減圧下での測定を可能にすることにより、正確な溶剤濃度を測定することができるとともに、余分な排気を抑制することができる基板処理装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and by enabling measurement under reduced pressure, it is possible to measure an accurate solvent concentration and suppress excessive exhaust. An object of the present invention is to provide a substrate processing apparatus that can be used.

本発明は、このような目的を達成するために、次のような構成をとる。
すなわち、請求項1に記載の発明は、処理液により処理された基板を溶剤蒸気により乾燥させる基板処理装置において、基板を収容するチャンバと、前記チャンバ内に溶剤蒸気を供給する溶剤蒸気供給手段と、前記チャンバ内を減圧する減圧手段と、前記チャンバ内に連通する測定配管と、前記測定配管に設けられた真空対応型濃度測定手段と、前記測定配管を介して前記チャンバ内の気体を吸引する吸引手段と、前記減圧手段で前記チャンバ内を減圧させた状態で、前記溶剤蒸気供給手段から溶剤蒸気を供給させるとともに、前記吸引手段で前記測定配管に前記チャンバ内の気体を吸引させながら前記真空対応型濃度測定手段により溶剤濃度を測定させる制御手段と、を備え、前記真空対応型濃度測定手段は、前記気体を流通させるセルと、前記セルに赤外線を照射する赤外線照射手段と、前記セルを透過する赤外線強度を検出する検出手段と、前記減圧手段による減圧度に応じて予め作成された、前記減圧度における赤外線強度と溶剤濃度との対応関係を表す検量線を記憶した記憶手段と、前記検出手段による赤外線強度と前記検量線とに基づいて溶剤濃度を算出する算出手段と、を備え、前記測定配管は、前記真空対応型濃度測定手段よりも上流側に配設された圧力調整弁と、前記圧力調整弁と前記真空対応型濃度測定手段との間に配設された圧力測定手段とを備え、前記圧力測定手段で測定される測定配管内圧力が前記検量線における減圧度を目標値としてフィードバック制御されることを特徴とするものである。
In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus for drying a substrate processed with a processing solution with a solvent vapor, a chamber for storing the substrate, and a solvent vapor supply means for supplying the solvent vapor into the chamber. The decompression means for decompressing the inside of the chamber, the measurement pipe communicating with the chamber, the vacuum-compatible concentration measurement means provided in the measurement pipe, and the gas in the chamber are sucked through the measurement pipe While the inside of the chamber is decompressed by the suction means and the decompression means, the solvent vapor is supplied from the solvent vapor supply means, and the vacuum is performed while the suction pipe sucks the gas in the chamber into the measurement pipe. and a control means for measuring the solvent concentration by the corresponding type concentration measuring means, the vacuum-compatible concentration measurement means includes a cell for circulating the gas Infrared irradiation means for irradiating the cell with infrared rays, detection means for detecting the infrared intensity transmitted through the cell, and the infrared intensity and solvent concentration at the degree of vacuum created in advance according to the degree of pressure reduction by the pressure reduction means Storage means for storing a calibration curve representing the correspondence relationship of, and a calculation means for calculating a solvent concentration based on the infrared intensity and the calibration curve by the detection means, and the measurement pipe has the vacuum-compatible concentration A pressure adjusting valve disposed upstream of the measuring means; and a pressure measuring means disposed between the pressure adjusting valve and the vacuum-compatible concentration measuring means, and is measured by the pressure measuring means. that the measurement pipe pressure is characterized in the this fed back controlled degree of vacuum as the target value in the calibration curve.

[作用・効果]請求項1に記載の発明によれば、制御手段が減圧手段でチャンバ内を減圧させた状態で、溶剤蒸気供給手段から溶剤蒸気を供給させるとともに、吸引手段で測定配管にチャンバ内の気体を吸引させながら真空対応型濃度測定手段により溶剤濃度を測定させる。濃度測定は真空対応型であるので、減圧環境下で溶剤蒸気の濃度測定ができ、乾燥環境下における溶剤蒸気の濃度測定が可能である。したがって、溶剤濃度を正確に制御することができ、基板の乾燥処理の均一性を向上させることができる。また、溶剤蒸気を希釈する必要がないので、余分な排気を抑制することができる。
また、算出手段は、赤外線照射手段から照射され、セルを透過する赤外線強度を検出手段により検出し、その赤外線強度と検量線とに基づいて溶剤濃度を算出するので、チャンバ内の圧力環境に関わらず測定が可能である。また、検量線の減圧度を変えることにより、チャンバ内の減圧度合いに関わらず測定が可能である。
さらに、測定配管内の圧力が検量線における減圧度と一致するので、検量線に基づいて算出手段が正確に濃度を求めることができる。
[Operation / Effect] According to the first aspect of the present invention, the control means causes the solvent vapor to be supplied from the solvent vapor supply means while the pressure in the chamber is reduced by the pressure reduction means, and the suction pipe supplies the chamber to the measurement pipe. The solvent concentration is measured by a vacuum-compatible concentration measuring means while sucking the gas inside. Since the concentration measurement is a vacuum-compatible type, the concentration of the solvent vapor can be measured under a reduced pressure environment, and the concentration of the solvent vapor under a dry environment can be measured. Therefore, the solvent concentration can be accurately controlled, and the uniformity of the substrate drying process can be improved. Moreover, since it is not necessary to dilute the solvent vapor, it is possible to suppress excessive exhaust.
In addition, the calculation means detects the infrared intensity irradiated from the infrared irradiation means and passes through the cell by the detection means, and calculates the solvent concentration based on the infrared intensity and the calibration curve. Measurement is possible. In addition, by changing the degree of decompression of the calibration curve, measurement is possible regardless of the degree of decompression in the chamber.
Furthermore, since the pressure in the measurement pipe matches the degree of decompression in the calibration curve, the calculation means can accurately determine the concentration based on the calibration curve.

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また、本発明において、前記測定配管は、前記真空対応型濃度測定手段よりも上流側に加熱手段を備えていることが好ましい(請求項)。溶剤蒸気が結露して濃度を測定するまでに濃度が変化することを防止することができ、濃度測定の精度を向上させることができる。 Further, in the present invention, the measuring pipe is preferably provided with heating means on the upstream side of the vacuum-responsive density measuring device (claim 2). It is possible to prevent the concentration of the solvent vapor from condensing and measuring the concentration until the concentration is measured, thereby improving the accuracy of the concentration measurement.

(削除)(Delete)

本発明に係る基板処理装置によれば、制御手段が減圧手段でチャンバ内を減圧させた状態で、溶剤蒸気供給手段から溶剤蒸気を供給させるとともに、吸引手段で測定配管にチャンバ内の気体を吸引させながら真空対応型濃度測定手段により溶剤濃度を測定させる。濃度測定は真空対応型であるので、減圧環境下で溶剤濃度を測定することができ、乾燥環境下における溶剤蒸気の濃度測定が可能である。したがって、溶剤濃度を正確に制御することができ、基板の乾燥処理の均一性を向上させることができる。また、測定にあたり溶剤蒸気を希釈する必要がないので、余分な排気を抑制することができる。
また、算出手段は、赤外線照射手段から照射され、セルを透過する赤外線強度を検出手段により検出し、その赤外線強度と検量線とに基づいて溶剤濃度を算出するので、チャンバ内の圧力環境に関わらず測定が可能である。また、検量線の減圧度を変えることにより、チャンバ内の減圧度合いに関わらず測定が可能である。
さらに、測定配管内の圧力が検量線における減圧度と一致するので、検量線に基づいて算出手段が正確に濃度を求めることができる。
According to the substrate processing apparatus of the present invention, the control means causes the solvent vapor to be supplied from the solvent vapor supply means while the pressure in the chamber is reduced by the pressure reducing means, and the gas in the chamber is sucked into the measurement pipe by the suction means. The solvent concentration is measured by vacuum-compatible concentration measuring means. Since the concentration measurement is a vacuum-compatible type, the solvent concentration can be measured in a reduced pressure environment, and the concentration of the solvent vapor in a dry environment can be measured. Therefore, the solvent concentration can be accurately controlled, and the uniformity of the substrate drying process can be improved. Further, since it is not necessary to dilute the solvent vapor for the measurement, it is possible to suppress excessive exhaust.
In addition, the calculation means detects the infrared intensity irradiated from the infrared irradiation means and passes through the cell by the detection means, and calculates the solvent concentration based on the infrared intensity and the calibration curve. Measurement is possible. In addition, by changing the degree of decompression of the calibration curve, measurement is possible regardless of the degree of decompression in the chamber.
Furthermore, since the pressure in the measurement pipe matches the degree of decompression in the calibration curve, the calculation means can accurately determine the concentration based on the calibration curve.

以下、図面を参照して本発明の一実施例を説明する。
図1は、実施例に係る基板処理装置の概略構成を示したブロック図である。
An embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a block diagram illustrating a schematic configuration of a substrate processing apparatus according to an embodiment.

この基板処理装置は、処理液を貯留する処理槽1を備えている。この処理槽1は、処理液を貯留し、起立姿勢とされた複数枚の基板Wを収容可能に構成されている。処理槽1の底部には、複数枚の基板Wが整列されている方向(紙面方向)に沿って長軸を有し、処理槽1内へ処理液を供給するための二本の噴出管7が配設されている。噴出管7は、供給管11を介して処理液供給源15に連通接続されており、その流量が供給管11に設けられた処理液弁17によって制御される。処理液供給源15は、フッ化水素酸(HF)や、硫酸・過酸化水素水(HSO/H)の混合液などの薬液や、純水などを処理液として供給する。 The substrate processing apparatus includes a processing tank 1 for storing a processing liquid. The processing tank 1 is configured to store a processing liquid and accommodate a plurality of substrates W in an upright posture. Two ejection pipes 7 for supplying a processing liquid into the processing tank 1 have a long axis at the bottom of the processing tank 1 along the direction (paper surface direction) in which a plurality of substrates W are aligned. Is arranged. The ejection pipe 7 is connected to a processing liquid supply source 15 through a supply pipe 11, and the flow rate thereof is controlled by a processing liquid valve 17 provided in the supply pipe 11. The processing liquid supply source 15 supplies chemical liquid such as hydrofluoric acid (HF), sulfuric acid / hydrogen peroxide solution (H 2 SO 4 / H 2 O 2 ), or pure water as a processing liquid. .

処理槽1は、その周囲がチャンバ27で囲われている。チャンバ27は、上部に開閉自在の上部カバー29を備えている。起立姿勢で複数枚の基板Wを保持するリフタ31は、処理槽1の上方にあたる「待機位置」と、処理槽1の内部にあたる「処理位置」とにわたって移動可能に構成されている。   The processing tank 1 is surrounded by a chamber 27. The chamber 27 includes an upper cover 29 that can be opened and closed. The lifter 31 that holds the plurality of substrates W in a standing posture is configured to be movable between a “standby position” that is above the processing tank 1 and a “processing position” that is inside the processing tank 1.

上部カバー29の下方であってチャンバ27の上部内壁には、一対の溶剤ノズル33が配設されている。溶剤ノズル33には、供給管35の一端側が連通接続されている。供給管35の他端側は、溶剤蒸気供給源37に連通接続されている。この供給管35には、溶剤蒸気の流量を調整するための蒸気弁39が配設されている。溶剤蒸気供給源37から供給される溶剤としては、例えば、イソプロピルアルコール(IPA)が例示される。   A pair of solvent nozzles 33 is disposed below the upper cover 29 and on the upper inner wall of the chamber 27. One end side of a supply pipe 35 is connected to the solvent nozzle 33 in communication. The other end side of the supply pipe 35 is connected in communication with a solvent vapor supply source 37. The supply pipe 35 is provided with a steam valve 39 for adjusting the flow rate of the solvent vapor. Examples of the solvent supplied from the solvent vapor supply source 37 include isopropyl alcohol (IPA).

上述した溶剤ノズル33が本発明における溶剤蒸気供給手段に相当する。   The solvent nozzle 33 described above corresponds to the solvent vapor supply means in the present invention.

チャンバ27には、真空ポンプ49が排気弁51を介して配設されている。本発明における減圧手段に相当する減圧ポンプ49は、チャンバ27の内部の気体を排出するためのものである。その減圧度合いは、例えば、10〜20kPa(絶対圧基準)である。因みに、絶対圧基準において完全真空は0kPaであり、大気圧は101kPaである。   A vacuum pump 49 is disposed in the chamber 27 via an exhaust valve 51. The decompression pump 49 corresponding to the decompression means in the present invention is for exhausting the gas inside the chamber 27. The degree of pressure reduction is, for example, 10 to 20 kPa (absolute pressure reference). Incidentally, in the absolute pressure standard, the complete vacuum is 0 kPa and the atmospheric pressure is 101 kPa.

処理槽1の底部には、排出口53が形成されている。この排出口53には、QDR弁55が取り付けられている。このQDR弁55から処理槽1内の処理液を排出すると、処理液がチャンバ27の底部に一旦排出される。チャンバ27の底部には、排出管57が取り付けられ、排出管57には排液弁59が取り付けられている。   A discharge port 53 is formed at the bottom of the processing tank 1. A QDR valve 55 is attached to the discharge port 53. When the processing liquid in the processing tank 1 is discharged from the QDR valve 55, the processing liquid is once discharged to the bottom of the chamber 27. A discharge pipe 57 is attached to the bottom of the chamber 27, and a drain valve 59 is attached to the discharge pipe 57.

チャンバ27の一部位には、測定配管61が配設されている。この測定配管61には、チャンバ27側から順に、インラインヒータ62と、圧力調整弁63と、圧力計65と、真空対応型濃度計67と、サンプリングポンプ69とが配設されている。測定配管61は最上流側にインラインヒータ62を備えているので、溶剤蒸気が測定配管61の内部で結露して、真空対応型濃度測定計67によって濃度を測定するまでに溶剤蒸気の濃度が変化することを防止することができ、濃度測定の精度を向上させることができる。   A measurement pipe 61 is disposed at one part of the chamber 27. In the measurement pipe 61, an in-line heater 62, a pressure adjustment valve 63, a pressure gauge 65, a vacuum-compatible concentration meter 67, and a sampling pump 69 are arranged in this order from the chamber 27 side. Since the measuring pipe 61 is provided with an in-line heater 62 on the most upstream side, the concentration of the solvent vapor changes until the solvent vapor is condensed inside the measuring pipe 61 and the concentration is measured by the vacuum-compatible concentration meter 67. Can be prevented, and the accuracy of concentration measurement can be improved.

なお、上記の圧力計65が本発明における圧力測定手段に相当する。   Note that the pressure gauge 65 corresponds to the pressure measuring means in the present invention.

詳細後述する真空対応型濃度計67は、チャンバ27内の減圧下における気体中の溶剤濃度を測定可能に構成されたものであり、代表的なものとして赤外線吸収方式が例示される。また、サンプリングポンプ69は、上述した真空ポンプ49よりも低い減圧度、例えば、5kPa(絶対圧基準)程度にまで減圧できることが好ましい。但し、その際の排出される絶対量は、真空ポンプ49には及ばない。   The vacuum-compatible densitometer 67, which will be described in detail later, is configured to be able to measure the solvent concentration in the gas under reduced pressure in the chamber 27, and a typical example is an infrared absorption method. Further, it is preferable that the sampling pump 69 can reduce the pressure to a degree of pressure lower than that of the vacuum pump 49 described above, for example, about 5 kPa (absolute pressure reference). However, the absolute amount discharged at that time does not reach the vacuum pump 49.

上述した処理液弁17、上部カバー29、リフタ31、蒸気弁39、真空ポンプ49、排気弁51、QDR弁55、排液弁59、インラインヒータ62と、圧力調整弁63、真空対応型濃度計67、サンプリングポンプ69などの動作は、制御部71によって統括的に制御される。   The processing liquid valve 17, the upper cover 29, the lifter 31, the steam valve 39, the vacuum pump 49, the exhaust valve 51, the QDR valve 55, the drain valve 59, the in-line heater 62, the pressure adjustment valve 63, and the vacuum-compatible concentration meter. 67. The operations of the sampling pump 69 and the like are comprehensively controlled by the control unit 71.

この制御部71は、例えば、次のように各部を操作して、一連の動作により基板Wに対する処理を行わせる。まず、処理槽1内の処理位置にリフタ31を移動させて薬液による処理を行わせ、続いて純水による洗浄を行わせる。純水洗浄を終えた後、QDR弁55、排液弁59と順に開放させて処理槽1内の純水を急速排水させた後、QDR弁55及び排液弁59を閉止させた状態で真空ポンプ49によってチャンバ27内を所定圧力まで減圧させる。その後、溶剤蒸気を溶剤ノズル33からチャンバ27内に供給させ、処理位置にある基板Wの周囲に溶剤蒸気を供給する。所定時間の経過後、溶剤蒸気の供給を停止させた後、処理位置のリフタ31を上昇させて待機位置にまで移動させる。これにより基板Wに対する洗浄・乾燥処理が行われる。上述した動作のうち、溶剤蒸気の供給時には、後述する「濃度測定」が常時行われている。   For example, the control unit 71 operates each unit as follows to perform processing on the substrate W by a series of operations. First, the lifter 31 is moved to a processing position in the processing tank 1 to perform processing with a chemical solution, and subsequently to cleaning with pure water. After the pure water cleaning is completed, the QDR valve 55 and the drainage valve 59 are opened in this order to rapidly drain the pure water in the treatment tank 1, and then the vacuum is maintained with the QDR valve 55 and the drainage valve 59 closed. The inside of the chamber 27 is reduced to a predetermined pressure by the pump 49. Thereafter, the solvent vapor is supplied from the solvent nozzle 33 into the chamber 27, and the solvent vapor is supplied around the substrate W at the processing position. After the predetermined time has elapsed, the supply of the solvent vapor is stopped, and then the lifter 31 at the processing position is raised and moved to the standby position. As a result, the substrate W is cleaned and dried. Among the operations described above, “concentration measurement” described later is always performed when the solvent vapor is supplied.

なお、真空対応型濃度計67が本発明における真空対応型濃度測定手段に相当し、サンプリングポンプ69が本発明における吸引手段に相当し、制御部71が本発明における制御手段に相当する。   The vacuum-compatible densitometer 67 corresponds to the vacuum-compatible concentration measuring means in the present invention, the sampling pump 69 corresponds to the suction means in the present invention, and the control unit 71 corresponds to the control means in the present invention.

次に、図2を参照する。図2は、真空対応型濃度計の概略構成を示した図である。   Reference is now made to FIG. FIG. 2 is a diagram showing a schematic configuration of a vacuum-compatible densitometer.

真空対応型濃度計67は、測定配管61の一部位にセル73を備えている。このセル73は、測定配管61を流通する気体を挟んで対向する位置に設けられた、赤外光を透過する一対の透過部材75を備えている。セル73の一方側には、赤外線を照射する光源77と、セル73を透過した赤外線強度を検出する検出器79とが配設されている。検出器79は、基準検出器81と、参照検出器83とを備え、不要な波長の赤外線を取り除く光学フィルタ(不図示)を光入射側に備えている。それぞれが検出した赤外線強度信号は、プリアンプ(不図示)を前段に備えた算出部85に与えられる。算出部85は、ランベルト−ベールの法則に基づいた光量差により溶剤濃度を算出するが、その際には記憶部87に記憶されている検量線(後述)を参照する。そして、算出した溶剤濃度を制御部71に出力する。算出部85は、基準検出器81からの基準信号に基づいて、参照検出器83の信号を自動的に補正し、光源77の光度が計時変化しても正確に溶剤濃度が算出できるようになっている。   The vacuum-compatible densitometer 67 includes a cell 73 at one part of the measurement pipe 61. The cell 73 includes a pair of transmitting members 75 that transmit infrared light and are provided at positions facing each other across the gas flowing through the measurement pipe 61. On one side of the cell 73, a light source 77 for irradiating infrared rays and a detector 79 for detecting the intensity of infrared rays transmitted through the cell 73 are disposed. The detector 79 includes a reference detector 81 and a reference detector 83, and includes an optical filter (not shown) that removes infrared rays having unnecessary wavelengths on the light incident side. The infrared intensity signals detected by each are supplied to a calculation unit 85 provided with a preamplifier (not shown) in the previous stage. The calculation unit 85 calculates the solvent concentration based on the light amount difference based on the Lambert-Beer law. At this time, a calibration curve (described later) stored in the storage unit 87 is referred to. Then, the calculated solvent concentration is output to the control unit 71. The calculation unit 85 automatically corrects the signal of the reference detector 83 based on the standard signal from the standard detector 81, and can accurately calculate the solvent concentration even if the light intensity of the light source 77 changes. ing.

なお、上述した光源77が本発明における赤外線照射手段に相当し、検出器79が本発明における検出手段に相当し、算出部85が本発明における算出手段に相当し、記憶部87が本発明における記憶手段に相当する。   The light source 77 described above corresponds to the infrared irradiation unit in the present invention, the detector 79 corresponds to the detection unit in the present invention, the calculation unit 85 corresponds to the calculation unit in the present invention, and the storage unit 87 in the present invention. It corresponds to storage means.

検量線は、例えば、図3に示すようになっている。
すなわち、赤外線強度(吸光度)と、溶剤濃度との対応関係を表したデータであり、かつ、所定の減圧度において予め作成されたものである。この図3では、検量線を一次関数で表しているが、これは一例であり、二次関数などで表されるようなデータとなることもある。
The calibration curve is, for example, as shown in FIG.
That is, the data represents the correspondence between the infrared intensity (absorbance) and the solvent concentration, and is created in advance at a predetermined pressure reduction degree. In FIG. 3, the calibration curve is represented by a linear function, but this is an example, and data such as a quadratic function may be obtained.

なお、制御部71は、検量線における減圧度を目標値として、圧力計65の圧力が目標値に一致するように圧力調整弁63をフィードバック制御する。これにより、検量線における減圧度となるような状態でチャンバ27内の気体を真空対応型濃度測定計67に導くことができ、精度良く濃度を測定することができる。   The control unit 71 feedback-controls the pressure adjustment valve 63 so that the pressure of the pressure gauge 65 matches the target value with the degree of pressure reduction in the calibration curve as the target value. Thereby, the gas in the chamber 27 can be guided to the vacuum-compatible concentration meter 67 in a state where the degree of decompression in the calibration curve is obtained, and the concentration can be measured with high accuracy.

次に、図4を参照する。なお、図4は、濃度測定に係る処理を示したフローチャートである。このフローチャートでは、上述した一連の動作中において、溶剤蒸気の供給が行われた時点からの動作を示している。   Reference is now made to FIG. FIG. 4 is a flowchart showing processing related to density measurement. This flowchart shows the operation from the time when the supply of the solvent vapor is performed during the series of operations described above.

ステップS1〜S3
制御部71は、蒸気弁39を所定の開度で開放して、溶剤蒸気を溶剤ノズル33からチャンバ27内に供給させ始める。このとき、サンプリングポンプ69を作動させて、チャンバ27内の気体の一部を測定配管61に吸引させる。さらに、圧力計65により検出された圧力が検量線における減圧度に一致するように圧力調整弁63を操作する。
Steps S1-S3
The controller 71 opens the vapor valve 39 at a predetermined opening and starts supplying solvent vapor from the solvent nozzle 33 into the chamber 27. At this time, the sampling pump 69 is operated, and a part of the gas in the chamber 27 is sucked into the measurement pipe 61. Further, the pressure adjustment valve 63 is operated so that the pressure detected by the pressure gauge 65 matches the degree of pressure reduction in the calibration curve.

ステップS4〜S7
圧力が検量線における減圧度に一致した場合、真空対応型濃度計67は溶剤蒸気の濃度を測定し、制御部71は、濃度測定値が予め決められた溶剤濃度目標値に一致しているか否かによって処理を分岐する。つまり、濃度測定の結果、溶剤濃度目標値に不一致である場合には、蒸気弁39を操作して、溶剤ノズル33への溶剤蒸気の供給量を調整する。一方、溶剤濃度目標値と一致している場合には、溶剤蒸気の供給時間が経過するまで、上述したステップS1から繰り返し実行する。
Steps S4 to S7
When the pressure matches the degree of pressure reduction in the calibration curve, the vacuum-compatible concentration meter 67 measures the concentration of the solvent vapor, and the control unit 71 determines whether or not the measured concentration value matches the predetermined solvent concentration target value. The process branches depending on whether That is, as a result of the concentration measurement, if the solvent concentration target value does not match, the steam valve 39 is operated to adjust the supply amount of the solvent vapor to the solvent nozzle 33. On the other hand, when it matches with the solvent concentration target value, the process is repeatedly executed from step S1 described above until the supply time of the solvent vapor elapses.

上述したように、制御部71が真空ポンプ49でチャンバ27内を減圧させた状態で、溶剤ノズル33から溶剤蒸気を供給させるとともに、サンプリングポンプ69で測定配管61にチャンバ27内の気体を吸引させながら真空対応型濃度計67により溶剤濃度を測定させる。濃度測定は真空対応型であるので、減圧環境下で濃度測定ができ、乾燥環境下における溶剤蒸気の濃度測定が可能である。したがって、溶剤濃度を正確に制御することができ、基板の乾燥処理の均一性を向上させることができる。また、溶剤蒸気を希釈する必要がないので、余分な排気を抑制することができる。   As described above, the control unit 71 supplies the solvent vapor from the solvent nozzle 33 in a state where the pressure in the chamber 27 is reduced by the vacuum pump 49, and causes the sampling pipe 69 to suck the gas in the chamber 27 into the measurement pipe 61. However, the solvent concentration is measured by the vacuum-compatible densitometer 67. Since the concentration measurement is a vacuum-compatible type, the concentration measurement can be performed under a reduced pressure environment, and the concentration of the solvent vapor can be measured under a dry environment. Therefore, the solvent concentration can be accurately controlled, and the uniformity of the substrate drying process can be improved. Moreover, since it is not necessary to dilute the solvent vapor, it is possible to suppress excessive exhaust.

本発明は、上記実施形態に限られることはなく、下記のように変形実施することができる。   The present invention is not limited to the above embodiment, and can be modified as follows.

(1)上述した実施例では、チャンバ27内に処理槽1を備えているが、単に基板Wを収容するチャンバ27だけとしてもよい。その場合には、複数枚の基板Wを起立姿勢で支持するだけの支持部をチャンバ27内に配設すればよい。   (1) Although the processing tank 1 is provided in the chamber 27 in the above-described embodiment, only the chamber 27 that accommodates the substrate W may be used. In that case, it is only necessary to provide a support portion in the chamber 27 that only supports the plurality of substrates W in a standing posture.

(2)上述した実施例では、測定配管61にインラインヒータ62を備えているが、溶剤蒸気が結露しない程度の濃度である場合には、インラインヒータ62を省略してもよい。   (2) In the embodiment described above, the measurement pipe 61 is provided with the in-line heater 62. However, the in-line heater 62 may be omitted when the concentration of the solvent vapor does not cause condensation.

(削除)(Delete)

)上述した実施例では、吸引手段としてサンプリングポンプ69を採用しているが、これに代えて、吸引作動用の気体を供給することによりチャンバ27内の気体を吸引するイジェクタを用いてもよい。吸引作動用の気体としては、窒素などの不活性ガスやエアなどが例示される。 ( 3 ) In the above-described embodiment, the sampling pump 69 is employed as the suction means. However, instead of this, an ejector that sucks the gas in the chamber 27 by supplying the gas for the suction operation may be used. Good. Examples of the gas for suction operation include inert gases such as nitrogen, air, and the like.

実施例に係る基板処理装置の概略構成を示したブロック図である。It is the block diagram which showed schematic structure of the substrate processing apparatus which concerns on an Example. 真空対応型濃度計の概略構成を示した図である。It is the figure which showed schematic structure of the vacuum-type densitometer. 検量線の一例を示した模式図である。It is the schematic diagram which showed an example of the calibration curve. 濃度測定に係る処理を示したフローチャートである。It is the flowchart which showed the process which concerns on a density | concentration measurement.

符号の説明Explanation of symbols

W … 基板
1 … 処理槽
7 … 噴出管
33 … 溶剤ノズル
49 … 真空ポンプ
65 … 圧力計
67 … 真空対応型濃度計
69 … サンプリングポンプ
71 … 制御部
77 … 光源
79 … 検出器
85 … 算出部
87 … 記憶部
W ... Substrate 1 ... Processing tank 7 ... Jet pipe 33 ... Solvent nozzle 49 ... Vacuum pump 65 ... Pressure gauge 67 ... Vacuum-compatible densitometer 69 ... Sampling pump 71 ... Control part 77 ... Light source 79 ... Detector 85 ... Calculation part 87 … Storage

Claims (2)

処理液により処理された基板を溶剤蒸気により乾燥させる基板処理装置において、
基板を収容するチャンバと、
前記チャンバ内に溶剤蒸気を供給する溶剤蒸気供給手段と、
前記チャンバ内を減圧する減圧手段と、
前記チャンバ内に連通する測定配管と、
前記測定配管に設けられた真空対応型濃度測定手段と、
前記測定配管を介して前記チャンバ内の気体を吸引する吸引手段と、
前記減圧手段で前記チャンバ内を減圧させた状態で、前記溶剤蒸気供給手段から溶剤蒸気を供給させるとともに、前記吸引手段で前記測定配管に前記チャンバ内の気体を吸引させながら前記真空対応型濃度測定手段により溶剤濃度を測定させる制御手段と、
を備え、
前記真空対応型濃度測定手段は、
前記気体を流通させるセルと、前記セルに赤外線を照射する赤外線照射手段と、前記セルを透過する赤外線強度を検出する検出手段と、前記減圧手段による減圧度に応じて予め作成された、前記減圧度における赤外線強度と溶剤濃度との対応関係を表す検量線を記憶した記憶手段と、前記検出手段による赤外線強度と前記検量線とに基づいて溶剤濃度を算出する算出手段と、
を備え、
前記測定配管は、前記真空対応型濃度測定手段よりも上流側に配設された圧力調整弁と、前記圧力調整弁と前記真空対応型濃度測定手段との間に配設された圧力測定手段とを備え、前記圧力測定手段で測定される測定配管内圧力が前記検量線における減圧度を目標値としてフィードバック制御される
とを特徴とする基板処理装置。
In a substrate processing apparatus for drying a substrate processed with a processing liquid by solvent vapor,
A chamber for receiving a substrate;
Solvent vapor supply means for supplying solvent vapor into the chamber;
Pressure reducing means for reducing the pressure in the chamber;
A measurement pipe communicating with the chamber;
A vacuum-compatible concentration measuring means provided in the measurement pipe;
Suction means for sucking the gas in the chamber through the measurement pipe;
While the pressure inside the chamber is reduced by the pressure reducing means, the solvent vapor is supplied from the solvent vapor supply means, and the vacuum-compatible concentration measurement is performed while the gas in the chamber is sucked into the measurement pipe by the suction means. Control means for measuring the solvent concentration by means;
With
The vacuum-compatible concentration measuring means includes:
The reduced pressure created in advance according to the degree of pressure reduction by the pressure reducing means by the cell through which the gas flows, the infrared irradiation means for irradiating the cell with infrared rays, the detecting means for detecting the infrared intensity transmitted through the cell, and the pressure reducing means Storage means storing a calibration curve representing the correspondence between infrared intensity and solvent concentration in degrees, calculation means for calculating the solvent concentration based on the infrared intensity and the calibration curve by the detection means,
With
The measurement pipe includes a pressure regulating valve disposed upstream of the vacuum-compatible concentration measuring unit, and a pressure measuring unit disposed between the pressure regulating valve and the vacuum-compatible concentration measuring unit. And the pressure in the measurement pipe measured by the pressure measuring means is feedback controlled using the degree of pressure reduction in the calibration curve as a target value.
The substrate processing apparatus according to claim and this.
請求項1に記載の基板処理装置において、
前記測定配管は、前記真空対応型濃度測定手段よりも上流側に加熱手段を備えていることを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 ,
The substrate processing apparatus, wherein the measurement pipe includes a heating means upstream of the vacuum-compatible concentration measuring means.
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